Atomic layer deposited second-order nonlinear optical metamaterial for back-end integration with CMOS-compatible nanophotonic circuitry

Stéphane Clemmen; Artur Hermans; Eduardo Solano; Jolien Dendooven; Kalle Koskinen; Martti Kauranen; Edouard Brainis; Christophe Detavernier; Roel Baets

doi:10.1364/OL.40.005371

Optics Letters
Vol. 40,
Issue 22,
pp. 5371-5374
(2015)
•https://doi.org/10.1364/OL.40.005371

Atomic layer deposited second-order nonlinear optical metamaterial for back-end integration with CMOS-compatible nanophotonic circuitry

Stéphane Clemmen, Artur Hermans, Eduardo Solano, Jolien Dendooven, Kalle Koskinen, Martti Kauranen, Edouard Brainis, Christophe Detavernier, and Roel Baets

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Stéphane Clemmen, Artur Hermans, Eduardo Solano, Jolien Dendooven, Kalle Koskinen, Martti Kauranen, Edouard Brainis, Christophe Detavernier, and Roel Baets, "Atomic layer deposited second-order nonlinear optical metamaterial for back-end integration with CMOS-compatible nanophotonic circuitry," Opt. Lett. 40, 5371-5374 (2015)

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- Nonlinear Optics
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About this Article
History
- Original Manuscript: August 21, 2015
- Revised Manuscript: October 2, 2015
- Manuscript Accepted: October 3, 2015
- Published: November 11, 2015

Abstract

We report the fabrication of artificial unidimensional crystals exhibiting an effective bulk second-order nonlinearity. The crystals are created by cycling atomic layer deposition of three dielectric materials such that the resulting metamaterial is noncentrosymmetric in the direction of the deposition. Characterization of the structures by second-harmonic generation Maker-fringe measurements shows that the main component of their nonlinear susceptibility tensor is about 5 pm/V, which is comparable to well-established materials and more than an order of magnitude greater than reported for a similar crystal [Appl. Phys. Lett. 107, 121903 (2015) [CrossRef] ]. Our demonstration opens new possibilities for second-order nonlinear effects on CMOS-compatible nanophotonic platforms.

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Material	Precursor	Growth (nm/cycle)	Bandgap (eV)	Refractive Index	No. Cycles for 0.7 nm Layer
${TiO}_{2}$	TDMAT–Tetrakis (dimethylamido)titaniuma	0.06	3.4 [15]	2.1 [16]	12
${Al}_{2} O_{3}$	TMA–Trimethylaluminium	0.1	8.8 [17]	1.5–1.7 [18]	7
${In}_{2} O_{3}$	${In (TMHD)}_{3}$ –Tris(2,2,6,6-tetramethyl-3,5-heptanedionato) indium(III)	0.01	3.7 [19]	2.2 [19]	70

ABC Composite		Borosilicate Glass
$n_{x}$ (980 nm) ordinary	2.02	$n$ (980 nm)	1.4633
$n_{x}$ (490 nm) ordinary	2.13	$N$ (490 nm)	1.4766
$n_{z}$ (980 nm) extraordinary	1.92	$χ_{x x z}^{glass} (m^{2} / V)$	$11.6 \pm 0.8 \times 10^{- 22}$ [25]
$n_{z}$ (490 nm) extraordinary	2.06	$χ_{z z z}^{glass} (m^{2} / V)$	$93 \pm 14 \times 10^{- 22}$ [25]

Material	Precursor	Growth (nm/cycle)	Bandgap (eV)	Refractive Index	No. Cycles for 0.7 nm Layer
${TiO}_{2}$	TDMAT–Tetrakis (dimethylamido)titaniuma	0.06	3.4 [15]	2.1 [16]	12
${Al}_{2} O_{3}$	TMA–Trimethylaluminium	0.1	8.8 [17]	1.5–1.7 [18]	7
${In}_{2} O_{3}$	${In (TMHD)}_{3}$ –Tris(2,2,6,6-tetramethyl-3,5-heptanedionato) indium(III)	0.01	3.7 [19]	2.2 [19]	70

ABC Composite		Borosilicate Glass
$n_{x}$ (980 nm) ordinary	2.02	$n$ (980 nm)	1.4633
$n_{x}$ (490 nm) ordinary	2.13	$N$ (490 nm)	1.4766
$n_{z}$ (980 nm) extraordinary	1.92	$χ_{x x z}^{glass} (m^{2} / V)$	$11.6 \pm 0.8 \times 10^{- 22}$ [25]
$n_{z}$ (490 nm) extraordinary	2.06	$χ_{z z z}^{glass} (m^{2} / V)$	$93 \pm 14 \times 10^{- 22}$ [25]

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Optics Letters