Abstract

A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 170 μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about $0.9\mathrm{m}\mathrm{\Omega }$. For the three-dimensional ZnO-nanowire photodetector, the photocurrent increased rapidly with a time constant of about 1 s when ultraviolet excitation was applied. The on–off current ratio was about ${10}^4$.

© 2015 Optical Society of America

Enhanced p-CuI/n-ZnO photodetector based on thermal evaporated CuI and pulsed laser deposited ZnO nanowires

Songren Niu, Fengzhou Zhao, Yu Hang, Cheng Wang, Lianjie Xin, Menglong Zhang, Man Xu, Dengying Zhang, Xinbo Chu, and Lichun Zhang
Opt. Lett. 45(2) 559-562 (2020)

Enhanced photoluminescence of nonpolar p-type ZnO film by surface plasmon resonance and electron transfer

Shanshan Chen, Xinhua Pan, Haiping He, Wei Chen, Cong Chen, Wen Dai, Honghai Zhang, Ping Ding, Jingyun Huang, Bin Lu, and Zhizhen Ye
Opt. Lett. 40(4) 649-652 (2015)

60-fold photoluminescence enhancement in Pt nanoparticle-coated ZnO films: role of surface plasmon coupling and conversion of non-radiative recombination

Shanshan Chen, Xinhua Pan, Haiping He, Wei Chen, Wen Dai, Cong Chen, Honghai Zhang, Ping Ding, Jingyun Huang, Bin Lu, Jianguo Lu, and Zhizhen Ye
Opt. Lett. 40(12) 2782-2785 (2015)

Selective patterned growth of ZnO nanowires/nanosheets and their photoluminescence properties

Kai Chen, Dao D. Thang, Satoshi Ishii, Ramu P. Sugavaneshwa, and Tadaaki Nagao
Opt. Mater. Express 5(2) 353-360 (2015)

Core/shell-structured upconversion nanophosphor and cadmium-free quantum-dot bilayer-based near-infrared photodetectors

A-Ra Hong, Jungyoon Kim, Su Yeon Kim, Seong-Il Kim, Kwangyeol Lee, and Ho Seong Jang
Opt. Lett. 40(21) 4959-4962 (2015)