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50 dB parametric on-chip gain in silicon photonic wires

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Abstract

A pulsed mid-infrared pump at λ=2173nm is used to demonstrate wideband optical parametric gain in a low-loss 2cm long silicon photonic wire. Using dispersion engineering to obtain negative second-order (β2) and positive fourth-order (β4) dispersion, we generate broadband modulation instability and parametric fluorescence extending from 1911nm2486nm. Using a cw probe signal to interrogate the modulation instability spectrum, we demonstrate parametric amplification >40dB with an on-chip gain bandwidth wider than 580nm, as well as narrowband Raman-assisted peak gain >50dB.

© 2011 Optical Society of America

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