Abstract
We demonstrate photodiodes in deposited polycrystalline silicon at wavelength with responsivity, dark current, and gigahertz time response. Subband absorption is mediated by defects that are naturally present in the polycrystalline material structure. The material exhibits a moderate absorption coefficient of , which allows the same microring resonator device to act as both a demultiplexing filter and a photodetector. We discuss the use of deposited silicon-based complementary metal-oxide semiconductor materials for nanophotonic interconnects.
© 2010 Optical Society of America
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