Si rib waveguide photodetector with an ordered array of Ge islands for $1.5\mu \mathrm{m}$

Abstract

This work demonstrates a rib waveguide photodetector based on a vertical Si p-i-n junction with Ge islands operating in the spectral region around $\lambda =1.55\mu \mathrm{m}$ at room temperature. A vertical stack of four layers of Ge islands is grown by molecular beam epitaxy on a silicon-on-insulator. Each layer is organized in a two-dimensional square grid with a period of $460\mathrm{nm}$. The spectral response of the detector extends well beyond $1.6\mu \mathrm{m}$ at $300\mathrm{K}$. The absorption length of $\sim 135\mu \mathrm{m}$ (at 1/e decrease of intensity) at $\lambda =1.55\mu \mathrm{m}$ along the waveguide allows for relatively small-size devices for all-on-one-platform integration.

© 2009 Optical Society of America

High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si

Ali K. Okyay, Ammar M. Nayfeh, Krishna C. Saraswat, Takao Yonehara, Ann Marshall, and Paul C. McIntyre
Opt. Lett. 31(17) 2565-2567 (2006)

Waveguide-integrated microdisk light-emitting diode and photodetector based on Ge quantum dots

Xuejun Xu, Takuya Maruizumi, and Yasuhiro Shiraki
Opt. Express 22(4) 3902-3910 (2014)

Comparison of two-dimensional arrays of gold disks and holes for plasmonic enhancement of Ge/Si quantum dot mid-infrared photodetectors

A. I. Yakimov, V. V. Kirienko, and A. V. Dvurechenskii
Opt. Mater. Express 8(11) 3479-3484 (2018)

Junction field-effect-transistor-based germanium photodetector on silicon-on-insulator

Subal Sahni, Xi Luo, Jian Liu, Ya-hong Xie, and Eli Yablonovitch
Opt. Lett. 33(10) 1138-1140 (2008)

GeSn/Ge multiquantum well photodetectors on Si substrates

M. Oehme, D. Widmann, K. Kostecki, P. Zaumseil, B. Schwartz, M. Gollhofer, R. Koerner, S. Bechler, M. Kittler, E. Kasper, and J. Schulze
Opt. Lett. 39(16) 4711-4714 (2014)