Abstract

We propose a novel semiconductor optoelectronic switch that is a fusion of a Ge optical detector and a Si metal-oxide semiconductor field-effect transistor (MOSFET). The device operation is investigated with simulations and experiments. The switch can be fabricated at the nanoscale with extremely low capacitance. This device operates in telecommunication standard wavelengths, hence providing the surrounding Si circuitry with noise immunity from signaling. The Ge gate absorbs light, and the gate photocurrent is amplified at the drain terminal. Experimental current gain of up to $1000\times$ is demonstrated. The device exhibits increased responsivity $(\sim 3.5\times )$ and lower off-state current $(\sim 4\times )$ compared with traditional detector schemes.

© 2007 Optical Society of America

Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver

Jonghyun Shin, Pallab Bhattacharya, Hao-Chih Yuan, Zhenqiang Ma, and György Váró
Opt. Lett. 32(5) 500-502 (2007)

SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting

Wei Du, Hiroshi Inokawa, Hiroaki Satoh, and Atsushi Ono
Opt. Lett. 36(15) 2800-2802 (2011)

Effects of substrate voltage on noise characteristics and hole lifetime in SOI metal-oxide-semiconductor field-effect transistor photon detector

Dedy Septono Catur Putranto, Purnomo Sidi Priambodo, Djoko Hartanto, Wei Du, Hiroaki Satoh, Atsushi Ono, and Hiroshi Inokawa
Opt. Express 22(18) 22072-22079 (2014)

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors

Ya-Ju Lee, Zu-Po Yang, Pin-Guang Chen, Yung-An Hsieh, Yung-Chi Yao, Ming-Han Liao, Min-Hung Lee, Mei-Tan Wang, and Jung-Min Hwang
Opt. Express 22(S6) A1589-A1595 (2014)

Junction field-effect-transistor-based germanium photodetector on silicon-on-insulator

Subal Sahni, Xi Luo, Jian Liu, Ya-hong Xie, and Eli Yablonovitch
Opt. Lett. 33(10) 1138-1140 (2008)