Abstract

Ni4H-SiC Schottky photodiodes of 5mm×5mm area have been fabricated and characterized. The photodiodes show less than 0.1pA dark current at 4V and an ideality factor of 1.06. A quantum efficiency (QE) between 3 and 400nm has been calibrated and compared with Si photodiodes optimized for extreme ultraviolet (EUV) detection. In the EUV region, the QE of SiC detectors increases from 0.14  electrons/photon at 120nmto30  electrons/photon at 3nm. The mean energy of electron-hole pair generation of 4H-SiC estimated from the spectral QE is found to be 7.9eV.

© 2006 Optical Society of America

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