Abstract

A new design for an all-silicon field-effect optical modulator in a ring resonator geometry is proposed and modeled by means of finite-element method simulations. It is shown that the optimal relative placement of the ultrathin field-effect-generated charge layers and the optical mode in the strong-confinement waveguides leads to more than an order-of-magnitude enhancement in the light–charge interaction compared with the recent predictions in the literature. We show that such an enhancement could provide optical modulation with a $>7\mathrm{dB}$ extinction-ratio using a voltage swing of only $2\mathrm{V}$, thus making our design compatible with complementary metal-oxide semiconductor technology.

© 2005 Optical Society of America

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