Abstract
First-order quasi-phase-matched difference frequency generation of narrowband tunable mid-infrared light is demonstrated in orientation-patterned GaAs. The all-epitaxial orientation-patterned crystal is fabricated by a combination of molecular beam epitaxy and hydride vapor phase epitaxy. Lasers at 1.3 and were mixed to give an idler output at , with power and wavelength tuning consistent with theoretical estimates, indicating excellent material uniformity over the 19-mm-long and -thick device.
© 2002 Optical Society of America
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