Abstract

By analysis of the response of a high-contrast photoresist to sinusoidal illumination, generated interferometrically, one can extract a phenomenological modulation transfer function of the resist material, thereby characterizing its spatial resolution. Deep-ultraviolet interferometric lithography allows the resist response to be quantified at length scales below 100 nm. As an example, the resolution (FWHM) of the commercial resist UVII-HS is found to be approximately 50 nm. This simple method can be applied to materials under development for advanced photolithography with short-wavelength illumination.

© 2002 Optical Society of America

Direction-sensitive subwavelength displacement measurements at diffraction-limited spatial resolution

Peter John Rodrigo, May Lim, and Caesar Saloma
Opt. Lett. 27(1) 25-27 (2002)

Real-time gray-scale photolithography for fabrication of continuous microstructure

Qinjun Peng, Yongkang Guo, Shijie Liu, and Zheng Cui
Opt. Lett. 27(19) 1720-1722 (2002)

Photoresist resolution measurement during the exposure process

M. S. Sthel, Carlos R. A. Lima, and Lucila Cescato
Appl. Opt. 30(35) 5152-5156 (1991)

Sensitivity study of two high-throughput resolution metrics for photoresists

Christopher N. Anderson and Patrick P. Naulleau
Appl. Opt. 47(1) 56-63 (2008)

Imaging interferometric lithography:?approaching the resolution limits of optics

Xiaolan Chen and S. R. J. Brueck
Opt. Lett. 24(3) 124-126 (1999)