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Measurement of trench depth by infrared interferometry

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Abstract

Measurement and control of high-aspect-ratio structures such as dynamic random-access memory trenches is an important step in the manufacture of modern memory devices. We present a novel technique based on infrared interferometry that has been implemented in manufacturing and is capable of measuring sub- 0.25µm-wide and 10µm-deep trenches nondestructively and with an accuracy of better than 0.1 µm.

© 1999 Optical Society of America

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