Abstract
An improved vertical coupling structure, consisting of a graded-index planar buried waveguide in glass and a dielectric overlayer, is designed and realized to provide an optimum edge coupling to a modeled GaAs photodetector. Calculations of the attenuation coefficient and coupling efficiency show an optimum absorption behavior. Normal-mode measurements and beam-propagation calculations of the coupling length and power transfer ratio are compared.
© 1995 Optical Society of America
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