Abstract

The behavior of photocurrents generated in the semiconductors InP:Fe, GaAs:Cr, and undoped GaAs in optical two-wave mixing experiments as a function of the frequency difference between the two waves is characterized and verified experimentally. The sign, the concentration, and the ratio γR/μ of the dominant charge carriers and the effective concentration of trapping centers can be found from this dependence.

© 1994 Optical Society of America

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