Abstract

We report the results of extreme-ultraviolet reflectance measurements and structural characterization of multilayer mirrors made by sequential sputter deposition of Si and B₄C. Compared with Si/Mo multilayers, Si/B₄C have a much narrower bandpass (δλ) and better off-peak rejection but lower peak reflectance (R₀). Mirrors with three different designs gave the following results: R₀ = 0.275 and δλ = 0.31 nm at 13.1 nm and normal incidence; R₀ = 0.34 and δλ = 1.1 nm at 18.2 nm and 45°; and R₀ = 0.30 and δλ= 2.0 nm at 23.6 nm and 45°. These multilayers exhibited excellent stability on annealing at temperatures up to 600°C.

© 1994 Optical Society of America

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