Abstract

We report the lasing characteristics of gain-guided AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes. At room temperature, continuous-wave operation is achieved over the wavelength range of 657–685 nm with the minimum threshold current at 670 nm. Devices with a 10-μm diameter have threshold currents as low as 1.25 mA at room temperature (297 K) and 0.8 mA at 250 K. In addition, a single predetermined linear polarization state is found, independent of the lasing mode order and operating temperature.

© 1994 Optical Society of America

Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers

Guoen Weng, Yang Mei, Jianping Liu, Werner Hofmann, Leiying Ying, Jiangyong Zhang, Yikun Bu, Zengcheng Li, Hui Yang, and Baoping Zhang
Opt. Express 24(14) 15546-15553 (2016)

Time-resolved observation and measurement of multiple-wavelength laser emission in multiple-quantum-well vertical-cavity structures

C. Tanguy, B. Sermage, J.-L. Oudar, and R. Azoulay
J. Opt. Soc. Am. B 11(8) 1418-1424 (1994)

Electrically pumped mode-locked vertical-cavity semiconductor lasers

Wenbin Jiang, Mitsuaki Shimizu, Richard P. Mirin, Thomas E. Reynolds, and John E. Bowers
Opt. Lett. 18(22) 1937-1939 (1993)

AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers

Y. Xiang, C. Reuterskiöld-Hedlund, X. Yu, C. Yang, T. Zabel, M. Hammar, and M.N. Akram
Opt. Express 23(12) 15680-15699 (2015)

High-speed characteristics of vertical cavity surface emitting lasers and resonant-cavity-enhanced photodetectors based on intracavity-contacted structure

Y. M. Song, B. K. Jeong, B. H. Na, K. S. Chang, J. S. Yu, and Y. T. Lee
Appl. Opt. 48(25) F11-F17 (2009)