Abstract

Optical pulses of 200 fs with 165 W of peak power have been generated from an AlGaAs semiconductor diode-laser system. These pulses represent, to our knowledge, both the shortest and most intense ever generated from an all-semiconductor injection diode-laser system. The intracavity pulse evolution in the external cavity is also investigated experimentally. The findings show that the large nonlinearities associated with gain depletion and saturable absorption cause appreciable spectral and temporal modification of the mode-locked optical pulse as it oscillates in the laser cavity.

© 1992 Optical Society of America

Generation of subpicosecond high-power optical pulses from a hybrid mode-locked semiconductor laser

P. J. Delfyett, C.-H. Lee, L. T. Florez, N. G. Stoffel, T. J. Gmitter, N. C. Andreadakis, G. A. Alphonse, and J. C. Connolly
Opt. Lett. 15(23) 1371-1373 (1990)

Ultrashort-pulse generation from high-power diode arrays by using intracavity optical nonlinearities

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Opt. Lett. 17(22) 1599-1601 (1992)

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Generation of high-peak-power 20-fs pulses from a regeneratively initiated, self-mode-locked Ti:sapphire laser

B. E. Lemoff and C. P. J. Barty
Opt. Lett. 17(19) 1367-1369 (1992)

Mode-locked InGaAs-AlGaAs disk laser generating sub-200-fs pulses, pulse picking and amplification by a tapered diode amplifier

Peter Klopp, Uwe Griebner, Martin Zorn, Andreas Klehr, Armin Liero, Markus Weyers, and Götz Erbert
Opt. Express 17(13) 10820-10834 (2009)