Abstract

We have measured the room-temperature intensity dependence of the optical transmission of an In_0.53Ga_0.47As/ In_0.52Al_0.48As multiple-quantum-well structure from 1.5 to 1.7 μm. The absorption is calculated from the transmission by taking into account the wavelength dependence of the reflection coefficients. An intensity of 15 kW cm⁻² is required to reduce the absorption by one half for excitation at the edge of the 1H–1C transition absorption band. For intensities exceeding 10⁷ W cm⁻², complete saturation of the absorption is observed. A theoretical model is described that fits the intensity dependence of the absorption right up to saturation at two wavelengths and predicts a carrier lifetime of 0.75 nsec, which has been confirmed by independent measurements.

© 1990 Optical Society of America

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