Abstract

The threshold current of extremely narrow semiconductor quantum-well lasers is calculated, accounting for the reduced lateral optical filling factor and the gain saturation in the quantum well. It is shown that the reduced optical filling factor leads to a minimum in the threshold current at an optimum value of the quantum-well width. Analytic approximations of the optimal width and length of the laser cavity are derived. In addition, it is shown that two-dimensional separate-confinement quantum-well heterostructures can reduce the threshold current, particularly in the case of quantum-wire lasers.

© 1990 Optical Society of America

Facet characteristics affecting threshold current of semiconductor lasers

John L. Remo
Appl. Opt. 29(21) 3076-3078 (1990)

Energy storage in quantum-well lasers

Y. C. Chen, P. Wang, R. G. Waters, and K. K. Lee
Opt. Lett. 15(19) 1073-1075 (1990)

Low threshold current density and high characteristic temperature narrow-stripe native oxide-confined 1.3-μm InGaAsN triple quantum well lasers

C.Y. Liu, S.F. Yoon, W.J. Fan, J.W. Ronnie Teo, and S. Yuan
Opt. Express 13(22) 9045-9051 (2005)

Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers

Jialin Jiang, Junqiang Sun, Jianfeng Gao, and Ruiwen Zhang
Opt. Express 25(22) 26714-26727 (2017)

InAs quantum dots with a narrow photoluminescence linewidth for a lower threshold current density in 1.55 µm lasers

Bin Wang, Xuezhe Yu, Yugang Zeng, Weijie Gao, Wei Chen, Haoyu Shen, Kedi Ma, Hongxiao Li, Zizhuo Liu, Hui Su, Li Qin, Yongqiang Ning, and Lijun Wang
Opt. Mater. Express 14(4) 1074-1084 (2024)