Abstract

We investigated the loaded gain and the carrier-induced refractive-index change in quantum-well lasers. A quantum-well laser is found typically to have a higher gain and a smaller refractive-index change than a conventional diode laser. We also found that the gain and the refractive-index change for these two types of semiconductor lasers saturate similarly, with the refractive index being a much weaker function of laser intensity.

© 1988 Optical Society of America

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