Abstract

Beryllium pairs form an isoelectronic complex in crystalline silicon that can bind an exciton. At sufficiently low temperatures, this bound exciton radiates in a narrow line near the wavelength λ = 1.15 μm. We report the observation of optical confinement of this bound-exciton emission from beryllium impurities introduced, by ion implantation, into an epitaxial-silicon optical waveguide.

© 1987 Optical Society of America

Optical emission from coupled surface plasmons

R. W. Gruhlke, W. R. Holland, and D. G. Hall
Opt. Lett. 12(5) 364-366 (1987)

Optical waveguides in oxygen-implanted buried-oxide silicon-on-insulator structures

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Opt. Lett. 13(2) 175-177 (1988)

Amplitude and phase modulation by free-carrier injection in III–V semiconducting waveguides for the 10.6-μm wavelength

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Opt. Lett. 12(11) 950-952 (1987)

InGaAs/GaAs multiquantum-well electroabsorption modulator with integrated waveguide

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Opt. Lett. 12(10) 820-822 (1987)

Numerical study of soliton emission from a nonlinear waveguide

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J. Opt. Soc. Am. B 4(11) 1837-1842 (1987)