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Dynamic reflectivity switching of infrared lasers by an inhomogeneous plasma

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Abstract

The effect of an inhomogeneous electron–hole plasma in a semiconductor on the reflection properties at the infrared is theoretically investigated. For an exponential density profile, it is shown that enhanced dynamic reflectivity diminishes significantly for relatively shallow plasma depths. These results can be used to design reflection plasma switches for the production of ultrashort infrared-laser pulses.

© 1987 Optical Society of America

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