Abstract

The proportionality of a transphasor signal to the photoexcited carrier density has been utilized to measure the transfer of the signal between adjacent optical channels and to estimate practical transphasor packing densities (∼10³ cm⁻²) for a pure, bulk étalon of InSb, 280 μm thick. By using the transphasor as a probe of the carrier population distribution produced by an adjacent beam, the ambipolar diffusion length was measured as 74 μm.

© 1987 Optical Society of America

Carrier diffusion measurements in InSb by the angular dependence of degenerate four-wave mixing

D. J. Hagan, H. A. MacKenzie, H. A. Al Attar, and W. J. Firth
Opt. Lett. 10(4) 187-189 (1985)

Cross talk between bistable elements on an InSb étalon

James Young, Harvey Richardson, Hugh A. MacKenzie, Eitan Abraham, and David J. Hagan
J. Opt. Soc. Am. B 5(1) 3-10 (1988)

Transverse coupling between a single-mode fiber and a thin-film waveguide

L. Bradley and C. A. Millar
Opt. Lett. 12(5) 358-360 (1987)

Optical bistability on reflection with an InSb étalon controlled by a guided wave

Dror Sarid, Ralph S. Jameson, and Robert K. Hickernell
Opt. Lett. 9(5) 159-161 (1984)

Effect of carrier diffusion on the nonlinear response of optical waveguides

Wayne M. Gibbons and Dror Sarid
Opt. Lett. 12(8) 564-566 (1987)