13 September 2010, Volume 18, Issue S3, pp. A261-A488
24 articles
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In order to fabricate photovoltaic (PV) cells incorporating light-trapping electrodes, illumination through the top-contact side of a photovoltaic device is desirable. Carrier generation profile in the PbS layer of an FTO/TiO2/PbS CQD/ITO device that is 60 (top), 120 (middle), or 230 (bottom) nm thick, illuminated from the top (left) or bottom (right). [See D. Aaron R. Barkhouse et al. Fig. 2 for details.]
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