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Y.-K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of light extraction efficiency of III-Nitride LEDs with self-assembled colloidal-based microlenses,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1218–1225 (2009).
[Crossref]
F. Olivier, S. Tirano, L. Dupré, B. Aventurier, C. Largeron, and F. Templier, “Influence of size-reduction on the performances of GaN-based micro-LEDs for display application,” J. Lumin. 191, 112–116 (2017).
[Crossref]
M. Schuster, P. O. Gervais, B. Jobst, W. Hösler, R. Averbeck, H. Riechert, A. Iberl, and R. Stömmer, “Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data,” J. Phys. D: Appl. Phys. 32(10A), A56–A60 (1999).
[Crossref]
B. Liu, R. Smith, J. Bai, Y. Gong, and T. Wang, “Great emission enhancement and excitonic recombination dynamics of InGaN/GaN nanorod structures,” Appl. Phys. Lett. 103(10), 101108 (2013).
[Crossref]
Q. Wang, J. Bai, Y. P. Gong, and T. Wang, “Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods,” J. Phys. D: Appl. Phys. 44(39), 395102 (2011).
[Crossref]
F. Della Sala, A. Di Carlo, P. Lugli, F. Bernardini, V. Fiorentini, R. Scholz, and J.-M. Jancu, “Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures,” Appl. Phys. Lett. 74(14), 2002–2004 (1999).
[Crossref]
C. D. Pynn, L. Chan, F. Lora Gonzalez, A. Berry, D. Hwang, H. Wu, T. Margalith, D. E. Morse, S. P. DenBaars, and M. J. Gordon, “Enhanced light extraction from free-standing InGaN/GaN light emitters using bio-inspired backside surface structuring,” Opt. Express 25(14), 15778 (2017).
[Crossref]
F. L. Gonzalez, L. Chan, A. Berry, D. E. Morse, and M. J. Gordon, “Simple colloidal lithography method to fabricate large-area moth-eye antireflective structures on Si, Ge, and GaAs for IR applications,” J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.--Process., Meas., Phenom. 32(5), 051213 (2014).
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M. Latzel, P. Büttner, G. Sarau, K. Höflich, M. Heilmann, W. Chen, X. Wen, G. Conibeer, and S. H. Christiansen, “Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation,” Nanotechnology 28(5), 055201 (2017).
[Crossref]
T. A. Truong, L. M. Campos, E. Matioli, I. Meinel, C. J. Hawker, C. Weisbuch, and P. M. Petroff, “Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal,” Appl. Phys. Lett. 94(2), 023101 (2009).
[Crossref]
C. D. Pynn, L. Chan, F. Lora Gonzalez, A. Berry, D. Hwang, H. Wu, T. Margalith, D. E. Morse, S. P. DenBaars, and M. J. Gordon, “Enhanced light extraction from free-standing InGaN/GaN light emitters using bio-inspired backside surface structuring,” Opt. Express 25(14), 15778 (2017).
[Crossref]
F. L. Gonzalez, L. Chan, A. Berry, D. E. Morse, and M. J. Gordon, “Simple colloidal lithography method to fabricate large-area moth-eye antireflective structures on Si, Ge, and GaAs for IR applications,” J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.--Process., Meas., Phenom. 32(5), 051213 (2014).
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L.-Y. Chen, Y.-Y. Huang, C.-H. Chang, Y.-H. Sun, Y.-W. Cheng, M.-Y. Ke, C.-P. Chen, and J. Huang, “High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes,” Opt. Express 18(8), 7664–7669 (2010).
[Crossref]
Y.-R. Wu, C. Chiu, C.-Y. Chang, P. Yu, and H.-C. Kuo, “Size-dependent strain relaxation and optical characteristics of InGaN/GaN nanorod LEDs,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1226–1233 (2009).
[Crossref]
D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band-edge electroabsorption in quantum well structures: The quantum-confined stark effect,” Phys. Rev. Lett. 53(22), 2173–2176 (1984).
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M.-Y. Hsieh, C.-Y. Wang, L.-Y. Chen, T.-P. Lin, M.-Y. Ke, Y.-W. Cheng, Y.-C. Yu, C. P. Chen, D.-M. Yeh, C.-F. Lu, C.-F. Huang, C. C. Yang, and J. J. Huang, “Improvement of external extraction efficiency in GaN-based LEDs by SiO2 nanosphere lithography,” IEEE Electron Device Lett. 29(7), 658–660 (2008).
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L.-Y. Chen, Y.-Y. Huang, C.-H. Chang, Y.-H. Sun, Y.-W. Cheng, M.-Y. Ke, C.-P. Chen, and J. Huang, “High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes,” Opt. Express 18(8), 7664–7669 (2010).
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C.-Y. Wang, L.-Y. Chen, C.-P. Chen, Y.-W. Cheng, M.-Y. Ke, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549 (2008).
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M. Y. Hsieh, C. Y. Wang, L. Y. Chen, M. Y. Ke, and J. J. Huang, “InGaN-GaN nanorod light emitting arrays fabricated by silica nanomasks,” IEEE J. Quantum Electron. 44(5), 468–472 (2008).
[Crossref]
L.-Y. Chen, Y.-Y. Huang, C.-H. Chang, Y.-H. Sun, Y.-W. Cheng, M.-Y. Ke, C.-P. Chen, and J. Huang, “High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes,” Opt. Express 18(8), 7664–7669 (2010).
[Crossref]
C.-Y. Wang, L.-Y. Chen, C.-P. Chen, Y.-W. Cheng, M.-Y. Ke, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549 (2008).
[Crossref]
M.-Y. Hsieh, C.-Y. Wang, L.-Y. Chen, T.-P. Lin, M.-Y. Ke, Y.-W. Cheng, Y.-C. Yu, C. P. Chen, D.-M. Yeh, C.-F. Lu, C.-F. Huang, C. C. Yang, and J. J. Huang, “Improvement of external extraction efficiency in GaN-based LEDs by SiO2 nanosphere lithography,” IEEE Electron Device Lett. 29(7), 658–660 (2008).
[Crossref]
M. Latzel, P. Büttner, G. Sarau, K. Höflich, M. Heilmann, W. Chen, X. Wen, G. Conibeer, and S. H. Christiansen, “Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation,” Nanotechnology 28(5), 055201 (2017).
[Crossref]
L.-Y. Chen, Y.-Y. Huang, C.-H. Chang, Y.-H. Sun, Y.-W. Cheng, M.-Y. Ke, C.-P. Chen, and J. Huang, “High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes,” Opt. Express 18(8), 7664–7669 (2010).
[Crossref]
C.-Y. Wang, L.-Y. Chen, C.-P. Chen, Y.-W. Cheng, M.-Y. Ke, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng, and J. Huang, “GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength,” Opt. Express 16(14), 10549 (2008).
[Crossref]
M.-Y. Hsieh, C.-Y. Wang, L.-Y. Chen, T.-P. Lin, M.-Y. Ke, Y.-W. Cheng, Y.-C. Yu, C. P. Chen, D.-M. Yeh, C.-F. Lu, C.-F. Huang, C. C. Yang, and J. J. Huang, “Improvement of external extraction efficiency in GaN-based LEDs by SiO2 nanosphere lithography,” IEEE Electron Device Lett. 29(7), 658–660 (2008).
[Crossref]
Y.-R. Wu, C. Chiu, C.-Y. Chang, P. Yu, and H.-C. Kuo, “Size-dependent strain relaxation and optical characteristics of InGaN/GaN nanorod LEDs,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1226–1233 (2009).
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C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007).
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Y. B. Hahn, R. J. Choi, J. H. Hong, H. J. Park, C. S. Choi, and H. J. Lee, “High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light- emitting diodes,” J. Appl. Phys. 92(3), 1189–1194 (2002).
[Crossref]
W. Y. Fu, K. K.-Y. Wong, and H. W. Choi, “Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography,” Appl. Phys. Lett. 95(13), 133125 (2009).
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W. N. Ng, C. H. Leung, P. T. Lai, and H. W. Choi, “Nanostructuring GaN using microsphere lithography,” J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.--Process., Meas., Phenom. 26(1), 76–79 (2008).
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Y. B. Hahn, R. J. Choi, J. H. Hong, H. J. Park, C. S. Choi, and H. J. Lee, “High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light- emitting diodes,” J. Appl. Phys. 92(3), 1189–1194 (2002).
[Crossref]
M. Latzel, P. Büttner, G. Sarau, K. Höflich, M. Heilmann, W. Chen, X. Wen, G. Conibeer, and S. H. Christiansen, “Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation,” Nanotechnology 28(5), 055201 (2017).
[Crossref]
C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, “Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands,” Nanotechnology 18(44), 445201 (2007).
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H. W. Huang, J. T. Chu, T. H. Hsueh, M. C. Ou-Yang, H. C. Kuo, and S. C. Wang, “Fabrication and photoluminescence of InGaN-based nanorods fabricated by plasma etching with nanoscale nickel metal islands,” J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.--Process., Meas., Phenom. 24(4), 1909–1912 (2006).
[Crossref]
M. Latzel, P. Büttner, G. Sarau, K. Höflich, M. Heilmann, W. Chen, X. Wen, G. Conibeer, and S. H. Christiansen, “Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation,” Nanotechnology 28(5), 055201 (2017).
[Crossref]
S. Pereira, M. R. Correia, E. Pereira, K. P. O’Donnell, E. Alves, A. D. Sequeira, N. Franco, I. M. Watson, and C. J. Deatcher, “Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping,” Appl. Phys. Lett. 80(21), 3913–3915 (2002).
[Crossref]
Q. Li, K. R. Westlake, M. H. Crawford, S. R. Lee, D. D. Koleske, J. J. Figiel, K. C. Cross, S. Fathololoumi, Z. Mi, and G. T. Wang, “Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays,” Opt. Express 19(25), 25528 (2011).
[Crossref]
Q. Li, K. R. Westlake, M. H. Crawford, S. R. Lee, D. D. Koleske, J. J. Figiel, K. C. Cross, S. Fathololoumi, Z. Mi, and G. T. Wang, “Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays,” Opt. Express 19(25), 25528 (2011).
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D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band-edge electroabsorption in quantum well structures: The quantum-confined stark effect,” Phys. Rev. Lett. 53(22), 2173–2176 (1984).
[Crossref]
S. Keller, N. A. Fichtenbaum, C. Schaake, C. J. Neufeld, A. David, E. Matioli, Y. Wu, S. P. DenBaars, J. S. Speck, C. Weisbuch, and U. K. Mishra, “Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells,” Phys. Status Solidi 244(6), 1797–1801 (2007).
[Crossref]
S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells,” J. Appl. Phys. 100(5), 054314 (2006).
[Crossref]
S. Pereira, M. R. Correia, E. Pereira, K. P. O’Donnell, E. Alves, A. D. Sequeira, N. Franco, I. M. Watson, and C. J. Deatcher, “Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping,” Appl. Phys. Lett. 80(21), 3913–3915 (2002).
[Crossref]
F. Della Sala, A. Di Carlo, P. Lugli, F. Bernardini, V. Fiorentini, R. Scholz, and J.-M. Jancu, “Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures,” Appl. Phys. Lett. 74(14), 2002–2004 (1999).
[Crossref]
C. D. Pynn, L. Chan, F. Lora Gonzalez, A. Berry, D. Hwang, H. Wu, T. Margalith, D. E. Morse, S. P. DenBaars, and M. J. Gordon, “Enhanced light extraction from free-standing InGaN/GaN light emitters using bio-inspired backside surface structuring,” Opt. Express 25(14), 15778 (2017).
[Crossref]
S. Keller, N. A. Fichtenbaum, C. Schaake, C. J. Neufeld, A. David, E. Matioli, Y. Wu, S. P. DenBaars, J. S. Speck, C. Weisbuch, and U. K. Mishra, “Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells,” Phys. Status Solidi 244(6), 1797–1801 (2007).
[Crossref]
S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells,” J. Appl. Phys. 100(5), 054314 (2006).
[Crossref]
C. H. Teng, L. Zhang, H. Deng, and P. C. Ku, “Strain-induced red-green-blue wavelength tuning in InGaN quantum wells,” Appl. Phys. Lett. 108(7), 071104 (2016).
[Crossref]
F. Della Sala, A. Di Carlo, P. Lugli, F. Bernardini, V. Fiorentini, R. Scholz, and J.-M. Jancu, “Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures,” Appl. Phys. Lett. 74(14), 2002–2004 (1999).
[Crossref]
T. Roesener, V. Klinger, C. Weuffen, D. Lackner, and F. Dimroth, “Determination of heteroepitaxial layer relaxation at growth temperature from room temperature x-ray reciprocal space maps,” J. Cryst. Growth 368, 21–28 (2013).
[Crossref]
F. Olivier, S. Tirano, L. Dupré, B. Aventurier, C. Largeron, and F. Templier, “Influence of size-reduction on the performances of GaN-based micro-LEDs for display application,” J. Lumin. 191, 112–116 (2017).
[Crossref]
Y.-K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of light extraction efficiency of III-Nitride LEDs with self-assembled colloidal-based microlenses,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1218–1225 (2009).
[Crossref]
Q. Li, K. R. Westlake, M. H. Crawford, S. R. Lee, D. D. Koleske, J. J. Figiel, K. C. Cross, S. Fathololoumi, Z. Mi, and G. T. Wang, “Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays,” Opt. Express 19(25), 25528 (2011).
[Crossref]
S. Keller, N. A. Fichtenbaum, C. Schaake, C. J. Neufeld, A. David, E. Matioli, Y. Wu, S. P. DenBaars, J. S. Speck, C. Weisbuch, and U. K. Mishra, “Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells,” Phys. Status Solidi 244(6), 1797–1801 (2007).
[Crossref]
S. Keller, C. Schaake, N. A. Fichtenbaum, C. J. Neufeld, Y. Wu, K. McGroddy, A. David, S. P. DenBaars, C. Weisbuch, J. S. Speck, and U. K. Mishra, “Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells,” J. Appl. Phys. 100(5), 054314 (2006).
[Crossref]
Q. Li, K. R. Westlake, M. H. Crawford, S. R. Lee, D. D. Koleske, J. J. Figiel, K. C. Cross, S. Fathololoumi, Z. Mi, and G. T. Wang, “Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays,” Opt. Express 19(25), 25528 (2011).
[Crossref]
F. Della Sala, A. Di Carlo, P. Lugli, F. Bernardini, V. Fiorentini, R. Scholz, and J.-M. Jancu, “Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures,” Appl. Phys. Lett. 74(14), 2002–2004 (1999).
[Crossref]
S. Pereira, M. R. Correia, E. Pereira, K. P. O’Donnell, E. Alves, A. D. Sequeira, N. Franco, I. M. Watson, and C. J. Deatcher, “Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping,” Appl. Phys. Lett. 80(21), 3913–3915 (2002).
[Crossref]
W. Y. Fu, K. K.-Y. Wong, and H. W. Choi, “Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography,” Appl. Phys. Lett. 95(13), 133125 (2009).
[Crossref]
V. Ramesh, A. Kikuchi, K. Kishino, M. Funato, and Y. Kawakami, “Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well,” J. Appl. Phys. 107(11), 114303 (2010).
[Crossref]
Q. Wang, Z. Ji, Y. Zhou, X. Wang, B. Liu, X. Xu, X. Gao, and J. Leng, “Diameter-dependent photoluminescence properties of strong phase-separated dual-wavelength InGaN/GaN nanopillar LEDs,” Appl. Surf. Sci. 410, 196–200 (2017).
[Crossref]
M. Schuster, P. O. Gervais, B. Jobst, W. Hösler, R. Averbeck, H. Riechert, A. Iberl, and R. Stömmer, “Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data,” J. Phys. D: Appl. Phys. 32(10A), A56–A60 (1999).
[Crossref]
Y.-K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of light extraction efficiency of III-Nitride LEDs with self-assembled colloidal-based microlenses,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1218–1225 (2009).
[Crossref]
B. Liu, R. Smith, J. Bai, Y. Gong, and T. Wang, “Great emission enhancement and excitonic recombination dynamics of InGaN/GaN nanorod structures,” Appl. Phys. Lett. 103(10), 101108 (2013).
[Crossref]
Q. Wang, J. Bai, Y. P. Gong, and T. Wang, “Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods,” J. Phys. D: Appl. Phys. 44(39), 395102 (2011).
[Crossref]
F. L. Gonzalez, L. Chan, A. Berry, D. E. Morse, and M. J. Gordon, “Simple colloidal lithography method to fabricate large-area moth-eye antireflective structures on Si, Ge, and GaAs for IR applications,” J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.--Process., Meas., Phenom. 32(5), 051213 (2014).
[Crossref]
C. D. Pynn, L. Chan, F. Lora Gonzalez, A. Berry, D. Hwang, H. Wu, T. Margalith, D. E. Morse, S. P. DenBaars, and M. J. Gordon, “Enhanced light extraction from free-standing InGaN/GaN light emitters using bio-inspired backside surface structuring,” Opt. Express 25(14), 15778 (2017).
[Crossref]
F. L. Gonzalez, L. Chan, A. Berry, D. E. Morse, and M. J. Gordon, “Simple colloidal lithography method to fabricate large-area moth-eye antireflective structures on Si, Ge, and GaAs for IR applications,” J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.--Process., Meas., Phenom. 32(5), 051213 (2014).
[Crossref]
D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band-edge electroabsorption in quantum well structures: The quantum-confined stark effect,” Phys. Rev. Lett. 53(22), 2173–2176 (1984).
[Crossref]
Y. B. Hahn, R. J. Choi, J. H. Hong, H. J. Park, C. S. Choi, and H. J. Lee, “High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light- emitting diodes,” J. Appl. Phys. 92(3), 1189–1194 (2002).
[Crossref]
T. A. Truong, L. M. Campos, E. Matioli, I. Meinel, C. J. Hawker, C. Weisbuch, and P. M. Petroff, “Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal,” Appl. Phys. Lett. 94(2), 023101 (2009).
[Crossref]
M. Latzel, P. Büttner, G. Sarau, K. Höflich, M. Heilmann, W. Chen, X. Wen, G. Conibeer, and S. H. Christiansen, “Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation,” Nanotechnology 28(5), 055201 (2017).
[Crossref]
M. Latzel, P. Büttner, G. Sarau, K. Höflich, M. Heilmann, W. Chen, X. Wen, G. Conibeer, and S. H. Christiansen, “Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation,” Nanotechnology 28(5), 055201 (2017).
[Crossref]
Y. B. Hahn, R. J. Choi, J. H. Hong, H. J. Park, C. S. Choi, and H. J. Lee, “High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light- emitting diodes,” J. Appl. Phys. 92(3), 1189–1194 (2002).
[Crossref]
M. Schuster, P. O. Gervais, B. Jobst, W. Hösler, R. Averbeck, H. Riechert, A. Iberl, and R. Stömmer, “Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data,” J. Phys. D: Appl. Phys. 32(10A), A56–A60 (1999).
[Crossref]
M. Y. Hsieh, C. Y. Wang, L. Y. Chen, M. Y. Ke, and J. J. Huang, “InGaN-GaN nanorod light emitting arrays fabricated by silica nanomasks,” IEEE J. Quantum Electron. 44(5), 468–472 (2008).
[Crossref]
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[Crossref]
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