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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]
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[Crossref]
Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[Crossref]
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[Crossref]
Z. F. Shi, Y. T. Zhang, J. X. Zhang, H. Wang, B. Wu, X. P. Cai, X. J. Cui, X. Dong, H. W. Liang, B. L. Zhang, and G. T. Du, “High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction,” Appl. Phys. Lett. 103(2), 021109 (2013).
[Crossref]
H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]
L. C. Zhang, Q. S. Li, L. Shang, F. F. Wang, C. Qu, and F. Z. Zhao, “Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer,” Opt. Express 21(14), 16578–16583 (2013).
[Crossref]
[PubMed]
L. C. Zhang, Q. S. Li, L. Shang, Z. J. Zhang, R. Z. Huang, and F. Z. Zhao, “Electroluminescence from n-ZnO : Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers,” J. Phys. D Appl. Phys. 45(48), 485103 (2012).
[Crossref]
J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[Crossref]
J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]
J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]
J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, “Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 96(20), 201102 (2010).
[Crossref]
H. H. Huang, G. J. Fang, X. M. Mo, H. Long, H. N. Wang, S. Z. Li, Y. Li, Y. P. Zhang, C. X. Pan, and D. L. Carroll, “Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer,” Appl. Phys. Lett. 101(22), 223504 (2012).
[Crossref]
M. S. Wang, Y. J. Zhou, Y. P. Zhang, J. K. Eui, H. H. Sung, and G. S. Seung, “Near-infrared photoluminescence from ZnO,” Appl. Phys. Lett. 100(10), 101906 (2012).
[Crossref]
Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[Crossref]
[PubMed]
Z. F. Shi, Y. T. Zhang, J. X. Zhang, H. Wang, B. Wu, X. P. Cai, X. J. Cui, X. Dong, H. W. Liang, B. L. Zhang, and G. T. Du, “High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction,” Appl. Phys. Lett. 103(2), 021109 (2013).
[Crossref]
L. C. Zhang, Q. S. Li, L. Shang, Z. J. Zhang, R. Z. Huang, and F. Z. Zhao, “Electroluminescence from n-ZnO : Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers,” J. Phys. D Appl. Phys. 45(48), 485103 (2012).
[Crossref]
J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, and D. Z. Shen, “ZnO light-emitting devices with a lifetime of 6.8 hours,” Appl. Phys. Lett. 101(1), 011106 (2012).
[Crossref]
H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]
H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]
L. C. Zhang, Q. S. Li, L. Shang, F. F. Wang, C. Qu, and F. Z. Zhao, “Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer,” Opt. Express 21(14), 16578–16583 (2013).
[Crossref]
[PubMed]
L. C. Zhang, Q. S. Li, L. Shang, Z. J. Zhang, R. Z. Huang, and F. Z. Zhao, “Electroluminescence from n-ZnO : Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers,” J. Phys. D Appl. Phys. 45(48), 485103 (2012).
[Crossref]
S. Chu, J. Z. Zhao, Z. Zuo, J. Y. Kong, L. Li, and J. L. Liu, “Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode,” J. Appl. Phys. 109(12), 123110 (2011).
[Crossref]
Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[Crossref]
[PubMed]
Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[Crossref]
[PubMed]
S. Z. Li, W. W. Lin, G. J. Fang, F. Huang, H. H. Huang, H. Long, X. M. Mo, H. N. Wang, W. J. Guan, and X. Z. Zhao, “Ultraviolet/violet dual-color electroluminescence based on n-ZnO single crystal/p-GaN direct-contact light-emitting diode,” J. Lumin. 140, 110–113 (2013).
[Crossref]
H. H. Huang, G. J. Fang, Y. Li, S. Z. Li, X. M. Mo, H. Long, H. N. Wang, D. L. Carroll, and X. Z. Zhao, “Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes,” Appl. Phys. Lett. 100(23), 233502 (2012).
[Crossref]
S. Z. Li, G. J. Fang, H. Long, X. M. Mo, H. H. Huang, B. Z. Dong, and X. Z. Zhao, “Enhancement of ultraviolet electroluminescence based on n-ZnO/n-GaN isotype heterojunction with low threshold voltage,” Appl. Phys. Lett. 96(20), 201111 (2010).
[Crossref]
H. Long, G. J. Fang, H. H. Huang, X. M. Mo, W. Xia, B. Z. Dong, X. Q. Meng, and X. Z. Zhao, “Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes,” Appl. Phys. Lett. 95(1), 013509 (2009).
[Crossref]
M. S. Wang, Y. J. Zhou, Y. P. Zhang, J. K. Eui, H. H. Sung, and G. S. Seung, “Near-infrared photoluminescence from ZnO,” Appl. Phys. Lett. 100(10), 101906 (2012).
[Crossref]
H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]
T. P. Yang, H. C. Zhu, J. M. Bian, J. C. Sun, X. Dong, B. L. Zhang, H. W. Liang, X. P. Li, Y. G. Cui, and G. T. Du, “Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD,” Mater. Res. Bull. 43(12), 3614–3620 (2008).
[Crossref]
S. Chu, J. Z. Zhao, Z. Zuo, J. Y. Kong, L. Li, and J. L. Liu, “Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode,” J. Appl. Phys. 109(12), 123110 (2011).
[Crossref]