Abstract

We report on gallium (Ga) doped cubic MgZnO films, which have been grown by metal organic chemical vapor deposition. It was demonstrated that Ga doping improves the n-type conduction of the cubic MgZnO films. A two-orders of magnitude enhancement in lateral n-type conduction have been achieved for the cubic MgZnO films. The responsivity of the cubic MgZnO-based photodetector has been also enhanced. Depletion region electric field intensity enhanced model was adopted to explain the improvement of quantum efficiency in Ga doped MgZnO-based detectors.

© 2014 Optical Society of America

1. Introduction

Ultraviolet C (UVC, 100–280 nm) is a part of absent solar radiation at the Earth’s surface, due to absorption in the ozonosphere [1]. The gap of solar spectrum provides a “black background” for detection of weak UVC emitting sources such as missile plume. Therefore, photodetection, with a cutoff wavelength shorter than 280 nm, has been called solar-blind photodetection [2]. Solar-blind photodetectors have found many applications including flame sensing, non-line-of-sight optical communication, missile plume sensing, UV astronomy, chemical/biological analysis, etc [39]. Unfortunately, the commercially available photomultiplier tubes, covering solar-blind region, have to work at high operating voltages, which limits their applications.

Currently, some wide bandgap semiconductors based detectors, focused on solar-blind sensitive, have been researched, such as AlxGa1-xN [10], BGaN [11], diamond [12], cubic BN [13], monoclinic gallium oxide (β-Ga2O3) [14], silicon carbide [15] and MgxZn1-xO [1618]. Among them, cubic MgxZn1-xO alloys have been receiving increasing intense attention due to its larger tunable bandgap (MgO 7.8 eV) and other unique optoelectronic natures [1921]. Our group has obtained a responsivity of 396 mA/W under 10 V bias @ 246nm, which had been valued as one of the highest responsivity in MgZnO-based solar-blind photodetectors [22]. On account of the consuming scattering and absorption for UVC in the ambiance, the solar-blind signal will be much weakened in a limited spread distance [4]. Accordingly, the high quantum efficiency is one of the figures of merit for solar-blind photodetectors which practice demanded [23]. However, for the cubic MgZnO based detectors, the gain mechanism is still not controllable, because of the ultra-high resistivity of the as grown films [2426]. This is an obstacle that hampers the realization of high-performance solar-blind photodetectors. In this report, by employing Triethylgallium as the n-type dopant source, gallium (Ga) doped cubic MgZnO films have been grown by metal organic chemical vapor deposition (MOCVD). It was demonstrated through electrical, optical, and structural studies that Ga doping improves the n-type conduction of the cubic MgZnO films. An enhancement of two-orders of magnitude in lateral n-type conduction has been achieved on the cubic MgZnO films. The responsivity of the planar structure metal-semiconductor-metal (MSM) photodetector has been also enhanced. Depletion region electric field intensity (EFI) enhanced model was adopted to explain the improvement of quantum efficiency (η) in Ga doped MgZnO-based detectors.

2. Experiments and results discussion

The ~600 nm thick undoped and Ga-doped cubic MgZnO films, with the same [Mg]/[Zn] mole flow ratio, were grown on (0001) sapphire substrate by MOCVD at 450 °C, respectively. The mole flow ratio for [Ga]/([Zn] + [Mg]) was fixed in 1:500. More details about the growth conditions of cubic MgZnO can be found in our works else [2527]. The X-ray diffraction (XRD) pattern of Fig. 1(a) reveals that the films, both undoped and Ga doped, are crystallized in cubic structure with (111) preferred orientation. There are no other significantly strong signals related to other phases, suggesting that no phase segregation or emerging of wurtzite MgZnO or Ga related spinel occurs in each MgZnO film. Both undoped and doped films have high transmission of around 80% in the visible range, and the same steep transmission edge at around 260 nm, corresponding to a bandgap of 4.77 eV, as shown in Fig. 1(b). The composition of the films is calculated to be Mg0.44Zn0.56O from equation (Eg = 3.02 + 4.03x) [28].

 

Fig. 1 (a) XRD pattern of the MgZnO films. No phase segregation is observed in both films. (b) Transmission spectrum taken from both films illustrating a bandgap of 4.77 eV, which is well within the solar-blind region.

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To confirm the incorporation of Ga into cubic MgZnO films, X-ray photoelectron spectroscopy (XPS) was carried out to investigate the elemental composition of the cubic MgZnO films. For the undoped films, no XPS signals from Ga could be detected, whereas for doped films a weak peak at 20.5 eV corresponding to Ga 3d core level was observed, as can be seen in Fig. 2, in addition to the strong Mg 2p and Zn 2p signals.

 

Fig. 2 XPS spectra of Ga-doped cubic MgZnO films.

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As illustrated in Fig. 3(a), Au Schottky contacts, with the planar MSM structure, were fabricated on the undoped and Ga-doped cubic MgZnO films, using vacuum evaporation, photolithography and wet etching procedure. The fingers were 500 µm long and 2 µm wide with a spacing of 5 µm. It should be noted that the Au electrodes are translucent in both the photodetectors, which will benefit to absorption of light. To explore the electrical properties, the current-voltage (I-V) curves of each photodetectors were measured in the dark. Figure 3(b) shows that the conductivity of Ga doped films is enhanced with two-orders of magnitude in lateral, which demonstrates that Ga-doping may help to make the conduction of cubic MgZnO controllable. To further contrast the optoelectronic properties of the undoped and doped samples, the photoresponse of the photodetectors was measured. As shown in Fig. 3(c), both the two photodetectors show a high sensitivity in solar-blind region. The Ga-doped sample shows an enhanced responsivity about 50 times at 265 nm under 10 V bias, compared to the undoped sample. Note that the rejection ratio of solar-blind UV to visible light, both samples, is about two orders of magnitude, demonstrating the good performance of the Ga doped cubic MgZnO. Figure 3(d) shows the responsivity as the function of bias voltage under 265 nm light illumination. In the investigated range, the Ga-doped sample always shows η is 50 times higher than the undoped sample.

 

Fig. 3 (a) Schematic diagram of the MSM photodetectors. (b) I-V characteristics of the two photodetectors in dark. (c) Spectral response of the detectors at 10 V bias revealing that the devices are both blind to solar light. (d) The dependence of the maximum responsivity of the photodetectors on the external bias.

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3. Theoretical modeling and simulation

The model of depletion region EFI enhanced is used to analysize the experimental results. In general, for a Schottky contact [29], if E00 << kBT, the thermionic emission is dominated in the junction electronic transport process without tunneling, where kB is the Boltzmann constant, T is absolute temperature, E00 is the characteristic energy related to the tunneling probability. E00 can be expressed by following formula:

E00=(q/2)(N/m*εs)1/2
where q is the elementary charge, ħ is the reduced Planck constant, N is the carrier density, m* is the effective mass and εs is the relative dielectric permittivity. In this work, m* = 0.3m0 and εs = 12 for cubic MgZnO [30,31], and the carrier concentration N is about 1016 cm−3 and 1014 cm−3 for the Ga-doped and undoped films, respectively, which were estimated by the resistance of the devices. So, E00 is about 2.4 meV and 0.24 meV for the doped and undoped films, which are both much smaller than the thermal energy kBT at room temperature (26 meV). Therefore, the I-V curve of this Schottky contact is determined by thermionic emission model. Considering the MSM structure, consisting of two Schottky contacts connected back to back on a coplanar surface, the I-V of the detectors can be described as following:
I=Isexp(qV/nkBT)[1exp(qV/kBT)]Is=AAn*T2exp(qϕB/kBT)
where V is the applied bias, A is the contact area, n is the ideality factor, B is Schottky Barrier Height (SBH) and A n* is the effective Richardson constant, which is 36 Acm−2K−2 for cubic MgZnO [32]. Then, according to the I-V curves [Fig. 3(b)], the SBH can be calculated. Here, for the doped sample, B1 is 0.908 eV, which is almost equal to that of the undoped sample, B2 (0.907 eV). It suggested that the built-in potential ϕbi1 is equal to ϕbi2, approximately.

Meanwhile, for the Schottky contact, the depletion width (WD) can be described as WD = [(2εs/qND)(ϕbi-V-kBT/q)]1/2, where ND is the donor concentration. In this work, the ND1 (Ga doped sample) is larger than ND2 (undoped sample) by at least two-orders of magnitude, so WD2/WD1(ND1/ND2)1/2 ≥ 10. In view of the above analysis, the Ga-doped MSM photodetector has the narrowing depletion region with the same built-in potential, which leads to a higher EFI in the effective layer. The enhanced EFI could separate the photogeneration carriers, effectively, as illustrate in Fig. 4.

 

Fig. 4 Energy-band diagram of the MSM photodetectors.

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To make the investigations visualized, simulations of the EFI distribution on MSM photodetectors were performed by using the COMSOL software. The proposed MSM structures and the simulation results are shown in Fig. 5. The EFI distribution, in vertical and horizontal, is shown in Figs. 5(b) and 5(c). In vertical, Ga-doped detector has a higher and abrupt EFI even reaching 600 nm. Furthermore, in horizontal, both the two detectors have the same effective EFI width. It makes sure that photogeneration carriers will be more effectively separated in the Ga-doped MSM photodetector. That is the reason why the η has been improved in the Ga doped MgZnO-based detectors.

 

Fig. 5 Simulations of the EFI distribution on MSM photodetectors (a) whole vision, (b) in vertical, and (c) in horizontal.

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4. Conclusion

In conclusion, by employing Ga-doping, the lateral conduction of cubic MgZnO films has been increased by two-orders of magnitude compared to the undoped case. The responsivity of the MSM photodetector has also been significantly improved. The EFI enhanced model was adopted to explain the improved η in the Ga-doped MgZnO-based detectors. From all the above results, it is indicated that Ga-doping (or other effective doping), which makes the electrical property of cubic MgZnO films controllable, is a valid method and prerequisite to realize the improvement of the MgZnO based photodetectors performance.

Acknowledgments

This work is supported by the National Basic Research Program of China (973 Program) under No.s 2011CB302002 and 2011CB302006, the National Natural Science Foundation of China under No.s 11134009.

References and links

1. M. Razeghi and A. Rogalski, “Semiconductor ultraviolet detectors,” J. Appl. Phys. 79(10), 7433–7473 (1996). [CrossRef]  

2. G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999). [CrossRef]  

3. E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008). [CrossRef]  

4. M. R. Luettgen, J. H. Shapiro, and D. M. Reilly, “Non-line-of-sight single-scatter propagation model,” J. Opt. Soc. Am. A 8(12), 1964–1972 (1991). [CrossRef]  

5. Z. Xu and B. M. Sadler, “Ultraviolet communications: potential and state-of-the-art,” IEEE Commun. Mag. 46, 67­73 (2008).

6. Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006). [CrossRef]   [PubMed]  

7. T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007). [CrossRef]  

8. C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002). [CrossRef]  

9. G. Chen, F. Abou-Galala, Z. Y. Xu, and B. M. Sadler, “Experimental evaluation of LED-based solar blind NLOS communication links,” Opt. Express 16(19), 15059–15068 (2008). [CrossRef]   [PubMed]  

10. T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001). [CrossRef]  

11. H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011). [CrossRef]  

12. Y. Koide, M. Y. Liao, and J. Alvarez, “Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor,” Mater. Trans. 46(9), 1965–1968 (2005). [CrossRef]  

13. A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008). [CrossRef]  

14. R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011). [CrossRef]  

15. K. J. Li, H. D. Liu, Q. G. Zhou, D. McIntosh, and J. C. Campbell, “SiC avalanche photodiode array with microlenses,” Opt. Express 18(11), 11713–11719 (2010). [CrossRef]   [PubMed]  

16. P. Wang, Q. H. Zhen, Q. Tang, Y. T. Yang, L. X. Guo, K. Ding, and F. Huang, “Steady-state characteristics and transient response of MgZnO-based metal-semiconductor-metal solar-blind ultraviolet photodetector with three types of electrode structures,” Opt. Express 21(15), 18387–18397 (2013). [CrossRef]   [PubMed]  

17. Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011). [CrossRef]  

18. S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011). [CrossRef]  

19. Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008). [CrossRef]  

20. S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010). [CrossRef]  

21. L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009). [CrossRef]  

22. L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009). [CrossRef]  

23. G. Konstantatos and E. H. Sargent, “Nanostructured materials for photon detection,” Nat. Nanotechnol. 5(6), 391–400 (2010). [CrossRef]   [PubMed]  

24. S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002). [CrossRef]  

25. X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013). [CrossRef]  

26. L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010). [CrossRef]  

27. X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012). [CrossRef]  

28. J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003). [CrossRef]  

29. S. M. Sze, Physics of Semiconductor Devices(Wiley, 1981.)

30. T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005). [CrossRef]  

31. J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010). [CrossRef]  

32. S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010). [CrossRef]  

References

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  1. M. Razeghi and A. Rogalski, “Semiconductor ultraviolet detectors,” J. Appl. Phys. 79(10), 7433–7473 (1996).
    [Crossref]
  2. G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
    [Crossref]
  3. E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
    [Crossref]
  4. M. R. Luettgen, J. H. Shapiro, and D. M. Reilly, “Non-line-of-sight single-scatter propagation model,” J. Opt. Soc. Am. A 8(12), 1964–1972 (1991).
    [Crossref]
  5. Z. Xu and B. M. Sadler, “Ultraviolet communications: potential and state-of-the-art,” IEEE Commun. Mag. 46, 67­73 (2008).
  6. Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
    [Crossref] [PubMed]
  7. T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
    [Crossref]
  8. C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
    [Crossref]
  9. G. Chen, F. Abou-Galala, Z. Y. Xu, and B. M. Sadler, “Experimental evaluation of LED-based solar blind NLOS communication links,” Opt. Express 16(19), 15059–15068 (2008).
    [Crossref] [PubMed]
  10. T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
    [Crossref]
  11. H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
    [Crossref]
  12. Y. Koide, M. Y. Liao, and J. Alvarez, “Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor,” Mater. Trans. 46(9), 1965–1968 (2005).
    [Crossref]
  13. A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
    [Crossref]
  14. R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
    [Crossref]
  15. K. J. Li, H. D. Liu, Q. G. Zhou, D. McIntosh, and J. C. Campbell, “SiC avalanche photodiode array with microlenses,” Opt. Express 18(11), 11713–11719 (2010).
    [Crossref] [PubMed]
  16. P. Wang, Q. H. Zhen, Q. Tang, Y. T. Yang, L. X. Guo, K. Ding, and F. Huang, “Steady-state characteristics and transient response of MgZnO-based metal-semiconductor-metal solar-blind ultraviolet photodetector with three types of electrode structures,” Opt. Express 21(15), 18387–18397 (2013).
    [Crossref] [PubMed]
  17. Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
    [Crossref]
  18. S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
    [Crossref]
  19. Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
    [Crossref]
  20. S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
    [Crossref]
  21. L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
    [Crossref]
  22. L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
    [Crossref]
  23. G. Konstantatos and E. H. Sargent, “Nanostructured materials for photon detection,” Nat. Nanotechnol. 5(6), 391–400 (2010).
    [Crossref] [PubMed]
  24. S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
    [Crossref]
  25. X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
    [Crossref]
  26. L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
    [Crossref]
  27. X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
    [Crossref]
  28. J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
    [Crossref]
  29. S. M. Sze, Physics of Semiconductor Devices(Wiley, 1981.)
  30. T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
    [Crossref]
  31. J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
    [Crossref]
  32. S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
    [Crossref]

2013 (2)

P. Wang, Q. H. Zhen, Q. Tang, Y. T. Yang, L. X. Guo, K. Ding, and F. Huang, “Steady-state characteristics and transient response of MgZnO-based metal-semiconductor-metal solar-blind ultraviolet photodetector with three types of electrode structures,” Opt. Express 21(15), 18387–18397 (2013).
[Crossref] [PubMed]

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

2012 (1)

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

2011 (4)

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

2010 (6)

K. J. Li, H. D. Liu, Q. G. Zhou, D. McIntosh, and J. C. Campbell, “SiC avalanche photodiode array with microlenses,” Opt. Express 18(11), 11713–11719 (2010).
[Crossref] [PubMed]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

G. Konstantatos and E. H. Sargent, “Nanostructured materials for photon detection,” Nat. Nanotechnol. 5(6), 391–400 (2010).
[Crossref] [PubMed]

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

2009 (2)

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

2008 (5)

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

G. Chen, F. Abou-Galala, Z. Y. Xu, and B. M. Sadler, “Experimental evaluation of LED-based solar blind NLOS communication links,” Opt. Express 16(19), 15059–15068 (2008).
[Crossref] [PubMed]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
[Crossref]

Z. Xu and B. M. Sadler, “Ultraviolet communications: potential and state-of-the-art,” IEEE Commun. Mag. 46, 67­73 (2008).

2007 (1)

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]

2006 (1)

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[Crossref] [PubMed]

2005 (2)

Y. Koide, M. Y. Liao, and J. Alvarez, “Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor,” Mater. Trans. 46(9), 1965–1968 (2005).
[Crossref]

T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]

2003 (1)

J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
[Crossref]

2002 (2)

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

2001 (1)

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

1999 (1)

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

1996 (1)

M. Razeghi and A. Rogalski, “Semiconductor ultraviolet detectors,” J. Appl. Phys. 79(10), 7433–7473 (1996).
[Crossref]

1991 (1)

Abarkan, M.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Abou-Galala, F.

Ahaitouf, A.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Altukhov, A. A.

E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
[Crossref]

Alvarez, J.

Y. Koide, M. Y. Liao, and J. Alvarez, “Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor,” Mater. Trans. 46(9), 1965–1968 (2005).
[Crossref]

Assouar, B.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Barkad, H. A.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

Beck, A. L.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Benbakhti, B.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

BenMoussa, A.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

Campbell, J. C.

K. J. Li, H. D. Liu, Q. G. Zhou, D. McIntosh, and J. C. Campbell, “SiC avalanche photodiode array with microlenses,” Opt. Express 18(11), 11713–11719 (2010).
[Crossref] [PubMed]

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Cao, J. M.

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

Chen, G.

Chen, H. Y.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

Chen, J.

J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
[Crossref]

Chen, N. B.

J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
[Crossref]

Chong, Y. M.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

Choopun, S.

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]

Chowdhury, U.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Collins, C. J.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

De Jaeger, J. C.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

DenBaars, S. P.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Ding, K.

Du, X.

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Dupuis, R. D.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Fan, X. W.

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Feshchenko, V. S.

E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
[Crossref]

Fini, P. T.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Fleischer, S. B.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Gautier, S.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Giordanengo, B.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

Gokkavas, M.

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]

Gorokhov, E. V.

E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
[Crossref]

Guo, L. X.

Hamady, S.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Han, S.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

Hochedez, J. F.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

Hou, Y.

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Huang, F.

Ibbetson, J. P.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Inal, A.

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]

Jiang, D. Y.

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Jiang, M.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Jiang, M. M.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

Ju, Z.

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Ju, Z. G.

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Kasu, M.

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[Crossref] [PubMed]

Kawasaki, M.

T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]

Keller, S.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Koide, Y.

Y. Koide, M. Y. Liao, and J. Alvarez, “Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor,” Mater. Trans. 46(9), 1965–1968 (2005).
[Crossref]

Kokubun, Y.

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

Konstantatos, G.

G. Konstantatos and E. H. Sargent, “Nanostructured materials for photon detection,” Nat. Nanotechnol. 5(6), 391–400 (2010).
[Crossref] [PubMed]

Kozodoy, P.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Lambert, D. J. H.

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Lee, S. T.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

Li, B.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Li, B. H.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Li, K. J.

Li, T.

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Liao, M. Y.

Y. Koide, M. Y. Liao, and J. Alvarez, “Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor,” Mater. Trans. 46(9), 1965–1968 (2005).
[Crossref]

Liu, H. D.

Liu, J. S.

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

Liu, Z.

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Luettgen, M. R.

Magunov, A. N.

E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
[Crossref]

Makimoto, T.

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[Crossref] [PubMed]

Makino, T.

T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]

Marchand, H.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Mattalah, M.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

McIntosh, D.

Mei, Z.

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Mishra, U. K.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Moudakir, T.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Nakagomi, S.

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

Ohtomo, A.

T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]

Ougazzaden, A.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Ozbay, E.

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]

Parish, G.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Qiu, D. J.

J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
[Crossref]

Razeghi, M.

M. Razeghi and A. Rogalski, “Semiconductor ultraviolet detectors,” J. Appl. Phys. 79(10), 7433–7473 (1996).
[Crossref]

Reilly, D. M.

Rogalski, A.

M. Razeghi and A. Rogalski, “Semiconductor ultraviolet detectors,” J. Appl. Phys. 79(10), 7433–7473 (1996).
[Crossref]

Sadler, B. M.

Salvestrini, J. P.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Sargent, E. H.

G. Konstantatos and E. H. Sargent, “Nanostructured materials for photon detection,” Nat. Nanotechnol. 5(6), 391–400 (2010).
[Crossref] [PubMed]

Segawa, Y.

T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]

Shan, C.

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Shan, C. X.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Shapiro, J. H.

Sharma, R. P.

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]

Shen, D.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Shen, D. Z.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Shen, H.

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]

Shen, W. Z.

J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
[Crossref]

Soltani, A.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

Srour, H.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Suzuki, R.

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

Tang, Q.

Taniyasu, Y.

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[Crossref] [PubMed]

Tarsa, E. J.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Tsukazaki, A.

T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]

Tut, T.

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]

Venkatesan, T.

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]

Vispute, R. D.

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]

Wang, L.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Wang, L. K.

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Wang, P.

Wang, S.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Wang, S. P.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

Wong, M. M.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Wu, H. Z.

J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
[Crossref]

Xie, X. H.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

Xu, Z.

Z. Xu and B. M. Sadler, “Ultraviolet communications: potential and state-of-the-art,” IEEE Commun. Mag. 46, 67­73 (2008).

Xu, Z. Y.

Yang, B.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Yang, C. L.

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

Yang, W.

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]

Yang, Y. T.

Yao, B.

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Zhang, J.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Zhang, J. Y.

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Zhang, T.

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Zhang, W. J.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

Zhang, Y.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Zhang, Z.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Zhang, Z. Z.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Zhao, D.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Zhao, D. X.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Zhao, H.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Zhao, Y.

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

Zhao, Y. M.

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

Zhen, Q. H.

Zheng, J.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Zhou, Q. G.

Zou, Y. S.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

ACS Appl. Mater. Interfaces (1)

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

Appl. Phys. Lett. (15)

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
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T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
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H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

IEEE Commun. Mag. (1)

Z. Xu and B. M. Sadler, “Ultraviolet communications: potential and state-of-the-art,” IEEE Commun. Mag. 46, 67­73 (2008).

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T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
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E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
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[Crossref]

J. Opt. Soc. Am. A (1)

J. Phys. Chem. C (1)

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

J. Phys. Condens. Matter (1)

J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
[Crossref]

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Opt. Express (3)

Solid State Commun. (1)

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

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S. M. Sze, Physics of Semiconductor Devices(Wiley, 1981.)

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Figures (5)

Fig. 1
Fig. 1 (a) XRD pattern of the MgZnO films. No phase segregation is observed in both films. (b) Transmission spectrum taken from both films illustrating a bandgap of 4.77 eV, which is well within the solar-blind region.
Fig. 2
Fig. 2 XPS spectra of Ga-doped cubic MgZnO films.
Fig. 3
Fig. 3 (a) Schematic diagram of the MSM photodetectors. (b) I-V characteristics of the two photodetectors in dark. (c) Spectral response of the detectors at 10 V bias revealing that the devices are both blind to solar light. (d) The dependence of the maximum responsivity of the photodetectors on the external bias.
Fig. 4
Fig. 4 Energy-band diagram of the MSM photodetectors.
Fig. 5
Fig. 5 Simulations of the EFI distribution on MSM photodetectors (a) whole vision, (b) in vertical, and (c) in horizontal.

Equations (2)

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E 00 = ( q/2 ) ( N/m* ε s ) 1/2
I= I s exp( qV/n k B T )[ 1exp( qV/ k B T ) ] I s =A A n * T 2 exp(q ϕ B / k B T)

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