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[Crossref]
H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]
E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
[Crossref]
Y. Koide, M. Y. Liao, and J. Alvarez, “Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor,” Mater. Trans. 46(9), 1965–1968 (2005).
[Crossref]
H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]
A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]
C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]
T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]
A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]
A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]
K. J. Li, H. D. Liu, Q. G. Zhou, D. McIntosh, and J. C. Campbell, “SiC avalanche photodiode array with microlenses,” Opt. Express 18(11), 11713–11719 (2010).
[Crossref]
[PubMed]
C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]
T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]
S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]
X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]
X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]
J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
[Crossref]
J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
[Crossref]
A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]
S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]
C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]
T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]
C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]
T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]
A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]
G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]
Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]
C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]
T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]
J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]
Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]
E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
[Crossref]
G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]
G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]
H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]
A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]
T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]
E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
[Crossref]
H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]
S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]
S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]
S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]
A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]
Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]
G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]
T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]
Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]
S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]
X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]
L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]
L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]
L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]
Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]
Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[Crossref]
[PubMed]
T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]
G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]
Y. Koide, M. Y. Liao, and J. Alvarez, “Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor,” Mater. Trans. 46(9), 1965–1968 (2005).
[Crossref]
R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]
G. Konstantatos and E. H. Sargent, “Nanostructured materials for photon detection,” Nat. Nanotechnol. 5(6), 391–400 (2010).
[Crossref]
[PubMed]
G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]
T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]
A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]
S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]
L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]
X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]
L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]
J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]
L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]
T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]
Y. Koide, M. Y. Liao, and J. Alvarez, “Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor,” Mater. Trans. 46(9), 1965–1968 (2005).
[Crossref]
J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]
Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]
E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
[Crossref]
Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[Crossref]
[PubMed]
T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]
G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]
A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]
Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]
G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]
H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]
R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]
T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]
H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]
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[Crossref]
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S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]
L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]
Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]
S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]
S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]
S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]
S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]
S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]
S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]
L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]
L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]
L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]
A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]