J. P. Tourrenc, P. Signoret, M. Myara, M. Bellon, J. P. Perez, J. M. Gosalbes, R. Alabedra, and B. Orsal, “Low-frequency FM-noise-induced lineshape: a theoretical and experimental approach,” IEEE J. Quantum Electron. 41(4), 549–553 (2005).
[Crossref]
B. Rösener, S. Kaspar, M. Rattunde, T. Töpper, C. Manz, K. Köhler, O. Ambacher, and J. Wagner, “2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHz,” Opt. Lett. 36(18), 3587–3589 (2011).
[Crossref]
[PubMed]
A. Garnache, A. Ouvrard, L. Cerutti, D. Barat, A. Vicet, F. Genty, Y. Rouillard, D. Romanini, and E. Cerda-Mendez, “2–2.7 µm single frequency tunable Sb-based lasers operating in CW at RT: Microcavity and External–cavity VCSELs, DFB,” Proc. SPIE 6184, 61840N, 61840N-15 (2006).
[Crossref]
J. P. Tourrenc, P. Signoret, M. Myara, M. Bellon, J. P. Perez, J. M. Gosalbes, R. Alabedra, and B. Orsal, “Low-frequency FM-noise-induced lineshape: a theoretical and experimental approach,” IEEE J. Quantum Electron. 41(4), 549–553 (2005).
[Crossref]
H. Lindberg, M. Strassner, E. Gerster, J. Bengtsson, and A. Larsson, “Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 11(5), 1126–1134 (2005).
[Crossref]
H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550 nm,” IEEE Photon. Technol. Lett. 16(2), 362–364 (2004).
[Crossref]
H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “High-power optically pumped 1550-nm VECSEL with a bonded silicon heat spreader,” IEEE Photon. Technol. Lett. 16(5), 1233–1235 (2004).
[Crossref]
A. Maclean, R. Birch, P. Roth, A. Kemp, and D. Burns, “Limits on efficiency and power scaling in semiconductor disk lasers with diamond heatspreaders,” J. Opt. Soc. Am. B 26(12), 2228–2236 (2009).
[Crossref]
N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[Crossref]
A. Kemp, J. Hopkins, A. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3-µm semiconductor disk lasers: a finite element analysis,” IEEE J. Quantum Electron. 44(2), 125–135 (2008).
[Crossref]
A. Kemp, G. Valentine, J. Hopkins, J. Hastie, S. Smith, S. Calvez, M. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]
A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, and A. Caliman, “Wafer-fused optically pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands,” Adv. Opt. Technol. 2011, 209093 (2011).
J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref]
[PubMed]
J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
S. Calvez, J. Hastie, M. Guina, O. Okhotnikov, and M. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]
A. Kemp, G. Valentine, J. Hopkins, J. Hastie, S. Smith, S. Calvez, M. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]
F. Camargo, S. Janicot, I. Sagnes, A. Garnache, P. Georges, and G. Lucas-Leclin, “Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm,” Proc. SPIE 8242, 82420F (2012).
[Crossref]
A. Garnache, A. Ouvrard, L. Cerutti, D. Barat, A. Vicet, F. Genty, Y. Rouillard, D. Romanini, and E. Cerda-Mendez, “2–2.7 µm single frequency tunable Sb-based lasers operating in CW at RT: Microcavity and External–cavity VCSELs, DFB,” Proc. SPIE 6184, 61840N, 61840N-15 (2006).
[Crossref]
A. Laurain, L. Cerutti, M. Myara, and A. Garnache, “2.7 µm single-frequency TEM00 operation of Sb-based diode-pumped external-cavity VCSEL,” Proc. SPIE 8242, 82420 L –82421 (2012).
A. Garnache, A. Ouvrard, L. Cerutti, D. Barat, A. Vicet, F. Genty, Y. Rouillard, D. Romanini, and E. Cerda-Mendez, “2–2.7 µm single frequency tunable Sb-based lasers operating in CW at RT: Microcavity and External–cavity VCSELs, DFB,” Proc. SPIE 6184, 61840N, 61840N-15 (2006).
[Crossref]
A. Ouvrard, A. Garnac, L. Cerutti, F. Genty, and D. Romanini, “Single-frequency tunable Sb-based VCSELs emitting at 2.3 µm,” IEEE Photon. Technol. Lett. 17(10), 2020–2022 (2005).
[Crossref]
A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, and A. Caliman, “Wafer-fused optically pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands,” Adv. Opt. Technol. 2011, 209093 (2011).
C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 µm vertical external cavity surface emitting laser with broad-band integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[Crossref]
S. Calvez, J. Hastie, M. Guina, O. Okhotnikov, and M. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]
A. Kemp, G. Valentine, J. Hopkins, J. Hastie, S. Smith, S. Calvez, M. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]
M. Jacquemet, M. Domenech, G. Lucas-Leclin, P. Georges, J. Dion, M. Strassner, I. Sagnes, and A. Garnache, “Single-frequency CW vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling,” Appl. Phys. B 86(3), 503–510 (2007).
[Crossref]
C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 µm vertical external cavity surface emitting laser with broad-band integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[Crossref]
M. Jacquemet, M. Domenech, G. Lucas-Leclin, P. Georges, J. Dion, M. Strassner, I. Sagnes, and A. Garnache, “Single-frequency CW vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling,” Appl. Phys. B 86(3), 503–510 (2007).
[Crossref]
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[Crossref]
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[Crossref]
A. Ouvrard, A. Garnac, L. Cerutti, F. Genty, and D. Romanini, “Single-frequency tunable Sb-based VCSELs emitting at 2.3 µm,” IEEE Photon. Technol. Lett. 17(10), 2020–2022 (2005).
[Crossref]
F. Camargo, S. Janicot, I. Sagnes, A. Garnache, P. Georges, and G. Lucas-Leclin, “Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm,” Proc. SPIE 8242, 82420F (2012).
[Crossref]
A. Laurain, L. Cerutti, M. Myara, and A. Garnache, “2.7 µm single-frequency TEM00 operation of Sb-based diode-pumped external-cavity VCSEL,” Proc. SPIE 8242, 82420 L –82421 (2012).
A. Laurain, M. Myara, G. Beaudoin, I. Sagnes, and A. Garnache, “Multiwatt-power highly-coherent compact single-frequency tunable Vertical-External-Cavity-Surface-Emitting-Semiconductor-Laser,” Opt. Express 18(14), 14627–14636 (2010).
[Crossref]
[PubMed]
M. Jacquemet, M. Domenech, G. Lucas-Leclin, P. Georges, J. Dion, M. Strassner, I. Sagnes, and A. Garnache, “Single-frequency CW vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling,” Appl. Phys. B 86(3), 503–510 (2007).
[Crossref]
A. Garnache, A. Ouvrard, and D. Romanini, “Single-frequency operation of external-cavity VCSELs: non-linear multimode temporal dynamics and quantum limit,” Opt. Express 15(15), 9403–9417 (2007).
[Crossref]
[PubMed]
A. Garnache, A. Ouvrard, L. Cerutti, D. Barat, A. Vicet, F. Genty, Y. Rouillard, D. Romanini, and E. Cerda-Mendez, “2–2.7 µm single frequency tunable Sb-based lasers operating in CW at RT: Microcavity and External–cavity VCSELs, DFB,” Proc. SPIE 6184, 61840N, 61840N-15 (2006).
[Crossref]
J. Geng, C. Spiegelberg, and S. Jiang, “Narrow linewidth fiber laser for 100-km optical frequency domain reflectometry,” IEEE Photon. Technol. Lett. 17(9), 1827–1829 (2005).
[Crossref]
C. Spiegelberg, J. Geng, Y. Hu, Y. Kaneda, S. Jiang, and N. Peyghambarian, “Low-noise narrow-linewidth fiber laser at 1550 nm,” J. Lightwave Technol. 22(1), 57–62 (2004).
[Crossref]
A. Garnache, A. Ouvrard, L. Cerutti, D. Barat, A. Vicet, F. Genty, Y. Rouillard, D. Romanini, and E. Cerda-Mendez, “2–2.7 µm single frequency tunable Sb-based lasers operating in CW at RT: Microcavity and External–cavity VCSELs, DFB,” Proc. SPIE 6184, 61840N, 61840N-15 (2006).
[Crossref]
A. Ouvrard, A. Garnac, L. Cerutti, F. Genty, and D. Romanini, “Single-frequency tunable Sb-based VCSELs emitting at 2.3 µm,” IEEE Photon. Technol. Lett. 17(10), 2020–2022 (2005).
[Crossref]
F. Camargo, S. Janicot, I. Sagnes, A. Garnache, P. Georges, and G. Lucas-Leclin, “Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm,” Proc. SPIE 8242, 82420F (2012).
[Crossref]
M. Jacquemet, M. Domenech, G. Lucas-Leclin, P. Georges, J. Dion, M. Strassner, I. Sagnes, and A. Garnache, “Single-frequency CW vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling,” Appl. Phys. B 86(3), 503–510 (2007).
[Crossref]
H. Lindberg, M. Strassner, E. Gerster, J. Bengtsson, and A. Larsson, “Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 11(5), 1126–1134 (2005).
[Crossref]
H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
[Crossref]
J. P. Tourrenc, P. Signoret, M. Myara, M. Bellon, J. P. Perez, J. M. Gosalbes, R. Alabedra, and B. Orsal, “Low-frequency FM-noise-induced lineshape: a theoretical and experimental approach,” IEEE J. Quantum Electron. 41(4), 549–553 (2005).
[Crossref]
M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” New J. Phys. 11(12), 125019 (2009).
[Crossref]
S. Calvez, J. Hastie, M. Guina, O. Okhotnikov, and M. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]
S. Viciani, M. Gabrysch, F. Marin, F. M. Sopra, M. Moser, and K. H. Gulden, “Lineshape of a vertical cavity surface emitting laser,” Opt. Commun. 206(1), 89–97 (2002).
[Crossref]
M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” New J. Phys. 11(12), 125019 (2009).
[Crossref]
S. Calvez, J. Hastie, M. Guina, O. Okhotnikov, and M. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]
A. Kemp, G. Valentine, J. Hopkins, J. Hastie, S. Smith, S. Calvez, M. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]
A. Kemp, J. Hopkins, A. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3-µm semiconductor disk lasers: a finite element analysis,” IEEE J. Quantum Electron. 44(2), 125–135 (2008).
[Crossref]
N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[Crossref]
A. Kemp, G. Valentine, J. Hopkins, J. Hastie, S. Smith, S. Calvez, M. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]
J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-µm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[Crossref]
M. Jacquemet, M. Domenech, G. Lucas-Leclin, P. Georges, J. Dion, M. Strassner, I. Sagnes, and A. Garnache, “Single-frequency CW vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling,” Appl. Phys. B 86(3), 503–510 (2007).
[Crossref]
F. Camargo, S. Janicot, I. Sagnes, A. Garnache, P. Georges, and G. Lucas-Leclin, “Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm,” Proc. SPIE 8242, 82420F (2012).
[Crossref]
J. Geng, C. Spiegelberg, and S. Jiang, “Narrow linewidth fiber laser for 100-km optical frequency domain reflectometry,” IEEE Photon. Technol. Lett. 17(9), 1827–1829 (2005).
[Crossref]
C. Spiegelberg, J. Geng, Y. Hu, Y. Kaneda, S. Jiang, and N. Peyghambarian, “Low-noise narrow-linewidth fiber laser at 1550 nm,” J. Lightwave Technol. 22(1), 57–62 (2004).
[Crossref]
Y. Kaneda, M. Fallahi, J. Hader, J. V. Moloney, S. W. Koch, B. Kunert, and W. Stoltz, “Continuous-wave single-frequency 295 nm laser source by a frequency-quadrupled optically pumped semiconductor laser,” Opt. Lett. 34(22), 3511–3513 (2009).
[Crossref]
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C. Spiegelberg, J. Geng, Y. Hu, Y. Kaneda, S. Jiang, and N. Peyghambarian, “Low-noise narrow-linewidth fiber laser at 1550 nm,” J. Lightwave Technol. 22(1), 57–62 (2004).
[Crossref]
A. Rantamäki, J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser,” Opt. Express 20(8), 9046–9051 (2012).
[Crossref]
[PubMed]
J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-µm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[Crossref]
A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref]
[PubMed]
J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
B. Rösener, S. Kaspar, M. Rattunde, T. Töpper, C. Manz, K. Köhler, O. Ambacher, and J. Wagner, “2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHz,” Opt. Lett. 36(18), 3587–3589 (2011).
[Crossref]
[PubMed]
A. Maclean, R. Birch, P. Roth, A. Kemp, and D. Burns, “Limits on efficiency and power scaling in semiconductor disk lasers with diamond heatspreaders,” J. Opt. Soc. Am. B 26(12), 2228–2236 (2009).
[Crossref]
A. Kemp, J. Hopkins, A. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3-µm semiconductor disk lasers: a finite element analysis,” IEEE J. Quantum Electron. 44(2), 125–135 (2008).
[Crossref]
A. Kemp, G. Valentine, J. Hopkins, J. Hastie, S. Smith, S. Calvez, M. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
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[Crossref]
H. Lindberg, A. Larsson, and M. Strassner, “Single-frequency operation of a high-power, long-wavelength semiconductor disk laser,” Opt. Lett. 30(17), 2260–2262 (2005).
[Crossref]
[PubMed]
H. Lindberg, M. Strassner, E. Gerster, J. Bengtsson, and A. Larsson, “Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 11(5), 1126–1134 (2005).
[Crossref]
H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
[Crossref]
H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “High-power optically pumped 1550-nm VECSEL with a bonded silicon heat spreader,” IEEE Photon. Technol. Lett. 16(5), 1233–1235 (2004).
[Crossref]
H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550 nm,” IEEE Photon. Technol. Lett. 16(2), 362–364 (2004).
[Crossref]
A. Laurain, L. Cerutti, M. Myara, and A. Garnache, “2.7 µm single-frequency TEM00 operation of Sb-based diode-pumped external-cavity VCSEL,” Proc. SPIE 8242, 82420 L –82421 (2012).
A. Laurain, M. Myara, G. Beaudoin, I. Sagnes, and A. Garnache, “Multiwatt-power highly-coherent compact single-frequency tunable Vertical-External-Cavity-Surface-Emitting-Semiconductor-Laser,” Opt. Express 18(14), 14627–14636 (2010).
[Crossref]
[PubMed]
M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” New J. Phys. 11(12), 125019 (2009).
[Crossref]
C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 µm vertical external cavity surface emitting laser with broad-band integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
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[Crossref]
H. Lindberg, A. Larsson, and M. Strassner, “Single-frequency operation of a high-power, long-wavelength semiconductor disk laser,” Opt. Lett. 30(17), 2260–2262 (2005).
[Crossref]
[PubMed]
H. Lindberg, M. Strassner, E. Gerster, J. Bengtsson, and A. Larsson, “Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 11(5), 1126–1134 (2005).
[Crossref]
H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550 nm,” IEEE Photon. Technol. Lett. 16(2), 362–364 (2004).
[Crossref]
H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “High-power optically pumped 1550-nm VECSEL with a bonded silicon heat spreader,” IEEE Photon. Technol. Lett. 16(5), 1233–1235 (2004).
[Crossref]
H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004).
[Crossref]
F. Camargo, S. Janicot, I. Sagnes, A. Garnache, P. Georges, and G. Lucas-Leclin, “Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm,” Proc. SPIE 8242, 82420F (2012).
[Crossref]
M. Jacquemet, M. Domenech, G. Lucas-Leclin, P. Georges, J. Dion, M. Strassner, I. Sagnes, and A. Garnache, “Single-frequency CW vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling,” Appl. Phys. B 86(3), 503–510 (2007).
[Crossref]
A. Rantamäki, J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser,” Opt. Express 20(8), 9046–9051 (2012).
[Crossref]
[PubMed]
A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, and A. Caliman, “Wafer-fused optically pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands,” Adv. Opt. Technol. 2011, 209093 (2011).
J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-µm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[Crossref]
J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref]
[PubMed]
J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
A. Maclean, R. Birch, P. Roth, A. Kemp, and D. Burns, “Limits on efficiency and power scaling in semiconductor disk lasers with diamond heatspreaders,” J. Opt. Soc. Am. B 26(12), 2228–2236 (2009).
[Crossref]
A. Kemp, J. Hopkins, A. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3-µm semiconductor disk lasers: a finite element analysis,” IEEE J. Quantum Electron. 44(2), 125–135 (2008).
[Crossref]
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[Crossref]
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[Crossref]
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A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref]
[PubMed]
J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
S. Viciani, M. Gabrysch, F. Marin, F. M. Sopra, M. Moser, and K. H. Gulden, “Lineshape of a vertical cavity surface emitting laser,” Opt. Commun. 206(1), 89–97 (2002).
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A. Laurain, M. Myara, G. Beaudoin, I. Sagnes, and A. Garnache, “Multiwatt-power highly-coherent compact single-frequency tunable Vertical-External-Cavity-Surface-Emitting-Semiconductor-Laser,” Opt. Express 18(14), 14627–14636 (2010).
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[Crossref]
A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, and A. Caliman, “Wafer-fused optically pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands,” Adv. Opt. Technol. 2011, 209093 (2011).
A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
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A. Rantamäki, J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser,” Opt. Express 20(8), 9046–9051 (2012).
[Crossref]
[PubMed]
J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref]
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[Crossref]
C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 µm vertical external cavity surface emitting laser with broad-band integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
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[Crossref]
A. Ouvrard, A. Garnac, L. Cerutti, F. Genty, and D. Romanini, “Single-frequency tunable Sb-based VCSELs emitting at 2.3 µm,” IEEE Photon. Technol. Lett. 17(10), 2020–2022 (2005).
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J. P. Tourrenc, P. Signoret, M. Myara, M. Bellon, J. P. Perez, J. M. Gosalbes, R. Alabedra, and B. Orsal, “Low-frequency FM-noise-induced lineshape: a theoretical and experimental approach,” IEEE J. Quantum Electron. 41(4), 549–553 (2005).
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[Crossref]
[PubMed]
J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-µm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[Crossref]
A. Rantamäki, J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser,” Opt. Express 20(8), 9046–9051 (2012).
[Crossref]
[PubMed]
A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
B. Rösener, S. Kaspar, M. Rattunde, T. Töpper, C. Manz, K. Köhler, O. Ambacher, and J. Wagner, “2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHz,” Opt. Lett. 36(18), 3587–3589 (2011).
[Crossref]
[PubMed]
N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[Crossref]
A. Kemp, J. Hopkins, A. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3-µm semiconductor disk lasers: a finite element analysis,” IEEE J. Quantum Electron. 44(2), 125–135 (2008).
[Crossref]
A. Rantamäki, J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser,” Opt. Express 20(8), 9046–9051 (2012).
[Crossref]
[PubMed]
A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, and A. Caliman, “Wafer-fused optically pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands,” Adv. Opt. Technol. 2011, 209093 (2011).
J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-µm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[Crossref]
J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref]
[PubMed]
J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
L. Richter, H. Mandelberg, M. Kruger, and P. McGrath, “Linewidth determination from self-heterodyne measurements with subcoherence delay times,” IEEE J. Quantum Electron. 22(11), 2070–2074 (1986).
[Crossref]
A. Garnache, A. Ouvrard, and D. Romanini, “Single-frequency operation of external-cavity VCSELs: non-linear multimode temporal dynamics and quantum limit,” Opt. Express 15(15), 9403–9417 (2007).
[Crossref]
[PubMed]
A. Garnache, A. Ouvrard, L. Cerutti, D. Barat, A. Vicet, F. Genty, Y. Rouillard, D. Romanini, and E. Cerda-Mendez, “2–2.7 µm single frequency tunable Sb-based lasers operating in CW at RT: Microcavity and External–cavity VCSELs, DFB,” Proc. SPIE 6184, 61840N, 61840N-15 (2006).
[Crossref]
A. Ouvrard, A. Garnac, L. Cerutti, F. Genty, and D. Romanini, “Single-frequency tunable Sb-based VCSELs emitting at 2.3 µm,” IEEE Photon. Technol. Lett. 17(10), 2020–2022 (2005).
[Crossref]
B. Rösener, S. Kaspar, M. Rattunde, T. Töpper, C. Manz, K. Köhler, O. Ambacher, and J. Wagner, “2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHz,” Opt. Lett. 36(18), 3587–3589 (2011).
[Crossref]
[PubMed]
A. Garnache, A. Ouvrard, L. Cerutti, D. Barat, A. Vicet, F. Genty, Y. Rouillard, D. Romanini, and E. Cerda-Mendez, “2–2.7 µm single frequency tunable Sb-based lasers operating in CW at RT: Microcavity and External–cavity VCSELs, DFB,” Proc. SPIE 6184, 61840N, 61840N-15 (2006).
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F. Camargo, S. Janicot, I. Sagnes, A. Garnache, P. Georges, and G. Lucas-Leclin, “Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm,” Proc. SPIE 8242, 82420F (2012).
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A. Laurain, M. Myara, G. Beaudoin, I. Sagnes, and A. Garnache, “Multiwatt-power highly-coherent compact single-frequency tunable Vertical-External-Cavity-Surface-Emitting-Semiconductor-Laser,” Opt. Express 18(14), 14627–14636 (2010).
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M. Jacquemet, M. Domenech, G. Lucas-Leclin, P. Georges, J. Dion, M. Strassner, I. Sagnes, and A. Garnache, “Single-frequency CW vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling,” Appl. Phys. B 86(3), 503–510 (2007).
[Crossref]
C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 µm vertical external cavity surface emitting laser with broad-band integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[Crossref]
S. Spießberger, M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, A. Peters, G. Erbert, and G. Tränkle, “Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz,” Opt. Express 19(8), 7077–7083 (2011).
[Crossref]
[PubMed]
S. Spießberger, M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, A. Peters, G. Erbert, and G. Tränkle, “Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz,” Opt. Express 19(8), 7077–7083 (2011).
[Crossref]
[PubMed]
N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[Crossref]
A. Kemp, J. Hopkins, A. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3-µm semiconductor disk lasers: a finite element analysis,” IEEE J. Quantum Electron. 44(2), 125–135 (2008).
[Crossref]
J. P. Tourrenc, P. Signoret, M. Myara, M. Bellon, J. P. Perez, J. M. Gosalbes, R. Alabedra, and B. Orsal, “Low-frequency FM-noise-induced lineshape: a theoretical and experimental approach,” IEEE J. Quantum Electron. 41(4), 549–553 (2005).
[Crossref]
A. Rantamäki, J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser,” Opt. Express 20(8), 9046–9051 (2012).
[Crossref]
[PubMed]
A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, and A. Caliman, “Wafer-fused optically pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands,” Adv. Opt. Technol. 2011, 209093 (2011).
J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-µm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[Crossref]
A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref]
[PubMed]
J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
A. Kemp, G. Valentine, J. Hopkins, J. Hastie, S. Smith, S. Calvez, M. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]
S. Viciani, M. Gabrysch, F. Marin, F. M. Sopra, M. Moser, and K. H. Gulden, “Lineshape of a vertical cavity surface emitting laser,” Opt. Commun. 206(1), 89–97 (2002).
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S. Spießberger, M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, A. Peters, G. Erbert, and G. Tränkle, “Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz,” Opt. Express 19(8), 7077–7083 (2011).
[Crossref]
[PubMed]
M. Jacquemet, M. Domenech, G. Lucas-Leclin, P. Georges, J. Dion, M. Strassner, I. Sagnes, and A. Garnache, “Single-frequency CW vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling,” Appl. Phys. B 86(3), 503–510 (2007).
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[Crossref]
C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 µm vertical external cavity surface emitting laser with broad-band integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
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C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 µm vertical external cavity surface emitting laser with broad-band integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004).
[Crossref]
J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-µm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011).
[Crossref]
J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref]
[PubMed]
B. Rösener, S. Kaspar, M. Rattunde, T. Töpper, C. Manz, K. Köhler, O. Ambacher, and J. Wagner, “2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHz,” Opt. Lett. 36(18), 3587–3589 (2011).
[Crossref]
[PubMed]
J. P. Tourrenc, P. Signoret, M. Myara, M. Bellon, J. P. Perez, J. M. Gosalbes, R. Alabedra, and B. Orsal, “Low-frequency FM-noise-induced lineshape: a theoretical and experimental approach,” IEEE J. Quantum Electron. 41(4), 549–553 (2005).
[Crossref]
S. Spießberger, M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, A. Peters, G. Erbert, and G. Tränkle, “Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz,” Opt. Express 19(8), 7077–7083 (2011).
[Crossref]
[PubMed]
A. Kemp, G. Valentine, J. Hopkins, J. Hastie, S. Smith, S. Calvez, M. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005).
[Crossref]
M. van Exter, S. Kuppens, and J. Woerdman, “Excess phase noise in self-heterodyne detection,” IEEE J. Quantum Electron. 28(3), 580–584 (1992).
[Crossref]
A. Garnache, A. Ouvrard, L. Cerutti, D. Barat, A. Vicet, F. Genty, Y. Rouillard, D. Romanini, and E. Cerda-Mendez, “2–2.7 µm single frequency tunable Sb-based lasers operating in CW at RT: Microcavity and External–cavity VCSELs, DFB,” Proc. SPIE 6184, 61840N, 61840N-15 (2006).
[Crossref]
S. Viciani, M. Gabrysch, F. Marin, F. M. Sopra, M. Moser, and K. H. Gulden, “Lineshape of a vertical cavity surface emitting laser,” Opt. Commun. 206(1), 89–97 (2002).
[Crossref]
A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, and A. Caliman, “Wafer-fused optically pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands,” Adv. Opt. Technol. 2011, 209093 (2011).
B. Rösener, S. Kaspar, M. Rattunde, T. Töpper, C. Manz, K. Köhler, O. Ambacher, and J. Wagner, “2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHz,” Opt. Lett. 36(18), 3587–3589 (2011).
[Crossref]
[PubMed]
A. Kemp, J. Hopkins, A. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3-µm semiconductor disk lasers: a finite element analysis,” IEEE J. Quantum Electron. 44(2), 125–135 (2008).
[Crossref]
N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008).
[Crossref]
A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, and A. Caliman, “Wafer-fused optically pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands,” Adv. Opt. Technol. 2011, 209093 (2011).
A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, and A. Caliman, “Wafer-fused optically pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands,” Adv. Opt. Technol. 2011, 209093 (2011).
S. Spießberger, M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, A. Peters, G. Erbert, and G. Tränkle, “Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz,” Opt. Express 19(8), 7077–7083 (2011).
[Crossref]
[PubMed]
S. Spießberger, M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, A. Peters, G. Erbert, and G. Tränkle, “Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz,” Opt. Express 19(8), 7077–7083 (2011).
[Crossref]
[PubMed]
M. van Exter, S. Kuppens, and J. Woerdman, “Excess phase noise in self-heterodyne detection,” IEEE J. Quantum Electron. 28(3), 580–584 (1992).
[Crossref]