C. Schinke, P. Christian Peest, J. Schmidt, R. Brendel, K. Bothe, M. R. Vogt, I. Kröger, S. Winter, A. Schirmacher, S. Lim, H. T. Nguyen, and D. MacDonald, “Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon,” AIP Adv. 5(6), 067168 (2015).

[Crossref]

K. J. Willis, S. C. Hagness, and I. Knezevic, “A generalized Drude model for doped silicon at terahertz frequencies derived from microscopic transport simulation,” Appl. Phys. Lett. 102(12), 122113 (2013).

[Crossref]

R. Ulbricht, E. Hendry, J. Shan, T. F. Heinz, and M. Bonn, “Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy,” Rev. Mod. Phys. 83(2), 543–586 (2011).

[Crossref]

F. Schindler, J. Geilker, W. Kwapil, W. Warta, and M. C. Schubert, “Hall mobility in multicrystalline silicon,” J. Appl. Phys. 110(4), 043722 (2011).

[Crossref]

C. M. Cirloganu, L. A. Padilha, D. A. Fishman, S. Webster, D. J. Hagan, and E. W. V. Stryland, “Extremely nondegenerate two-photon absorption in direct-gap semiconductors [Invited],” Opt. Express 19(23), 22951–22960 (2011).

[Crossref]

O. Esenturk, J. S. Melinger, and E. J. Heilweil, “Terahertz mobility measurements on poly-3-hexylthiophene films: Device comparison, molecular weight, and film processing effects,” J. Appl. Phys. 103(2), 023102 (2008).

[Crossref]

A. D. Bristow, N. Rotenberg, and H. M. van Driel, “Two-photon absorption and Kerr coefficients of silicon for 850–2200nm,” Appl. Phys. Lett. 90(19), 191104 (2007).

[Crossref]

T. Bronger and R. Carius, “Carrier mobilities in microcrystalline silicon films,” Thin Solid Films 515(19), 7486–7489 (2007).

[Crossref]

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys. 94(10), 6447–6455 (2003).

[Crossref]

M. C. Beard, G. M. Turner, and C. A. Schmuttenmaer, “Terahertz Spectroscopy,” J. Phys. Chem. B 106(29), 7146–7159 (2002).

[Crossref]

M. C. Beard, G. M. Turner, and C. A. Schmuttenmaer, “Transient photoconductivity in GaAs as measured by time-resolved terahertz spectroscopy,” Phys. Rev. B 62(23), 15764–15777 (2000).

[Crossref]

A. A. Said, M. Sheik-Bahae, D. J. Hagan, T. H. Wei, J. Wang, J. Young, and E. W. V. Stryland, “Determination of bound-electronic and free-carrier nonlinearities in ZnSe, GaAs, CdTe, and ZnTe,” J. Opt. Soc. Am. B 9(3), 405–414 (1992).

[Crossref]

A. Penzkofer and A. A. Bugayev, “Two-photon absorption and emission dynamics of bulk GaAs,” Opt. Quantum Electron. 21(4), 283–306 (1989).

[Crossref]

D. E. Aspnes, S. M. Kelso, R. A. Logan, and R. Bhat, “Optical properties of AlxGa1−x As,” J. Appl. Phys. 60(2), 754–767 (1986).

[Crossref]

F. Szmulowicz, “Calculation of the mobility and the Hall factor for doped p-type silicon,” Phys. Rev. B 34(6), 4031–4047 (1986).

[Crossref]

W. R. Thurber, R. L. Mattis, Y. M. Liu, and J. J. Filliben, “Resistivity-Dopant Density Relationship for Boron-Doped Silicon,” J. Electrochem. Soc. 127(10), 2291–2294 (1980).

[Crossref]

W. R. Thurber, R. L. Mattis, Y. M. Liu, and J. J. Filliben, “Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon,” J. Electrochem. Soc. 127(8), 1807–1812 (1980).

[Crossref]

J. R. Chelikowsky and M. L. Cohen, “Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors,” Phys. Rev. B 14(2), 556–582 (1976).

[Crossref]

R. Chwang, B. J. Smith, and C. R. Crowell, “Contact size effects on the van der Pauw method for resistivity and Hall coefficient measurement,” Solid-State Electron. 17(12), 1217–1227 (1974).

[Crossref]

D. M. Caughey and R. E. Thomas, “Carrier mobilities in silicon empirically related to doping and field,” Proc. IEEE 55(12), 2192–2193 (1967).

[Crossref]

D. E. Aspnes, S. M. Kelso, R. A. Logan, and R. Bhat, “Optical properties of AlxGa1−x As,” J. Appl. Phys. 60(2), 754–767 (1986).

[Crossref]

M. C. Beard, G. M. Turner, and C. A. Schmuttenmaer, “Terahertz Spectroscopy,” J. Phys. Chem. B 106(29), 7146–7159 (2002).

[Crossref]

M. C. Beard, G. M. Turner, and C. A. Schmuttenmaer, “Transient photoconductivity in GaAs as measured by time-resolved terahertz spectroscopy,” Phys. Rev. B 62(23), 15764–15777 (2000).

[Crossref]

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys. 94(10), 6447–6455 (2003).

[Crossref]

D. E. Aspnes, S. M. Kelso, R. A. Logan, and R. Bhat, “Optical properties of AlxGa1−x As,” J. Appl. Phys. 60(2), 754–767 (1986).

[Crossref]

R. Ulbricht, E. Hendry, J. Shan, T. F. Heinz, and M. Bonn, “Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy,” Rev. Mod. Phys. 83(2), 543–586 (2011).

[Crossref]

C. Schinke, P. Christian Peest, J. Schmidt, R. Brendel, K. Bothe, M. R. Vogt, I. Kröger, S. Winter, A. Schirmacher, S. Lim, H. T. Nguyen, and D. MacDonald, “Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon,” AIP Adv. 5(6), 067168 (2015).

[Crossref]

C. Schinke, P. Christian Peest, J. Schmidt, R. Brendel, K. Bothe, M. R. Vogt, I. Kröger, S. Winter, A. Schirmacher, S. Lim, H. T. Nguyen, and D. MacDonald, “Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon,” AIP Adv. 5(6), 067168 (2015).

[Crossref]

A. D. Bristow, N. Rotenberg, and H. M. van Driel, “Two-photon absorption and Kerr coefficients of silicon for 850–2200nm,” Appl. Phys. Lett. 90(19), 191104 (2007).

[Crossref]

T. Bronger and R. Carius, “Carrier mobilities in microcrystalline silicon films,” Thin Solid Films 515(19), 7486–7489 (2007).

[Crossref]

A. Penzkofer and A. A. Bugayev, “Two-photon absorption and emission dynamics of bulk GaAs,” Opt. Quantum Electron. 21(4), 283–306 (1989).

[Crossref]

T. Bronger and R. Carius, “Carrier mobilities in microcrystalline silicon films,” Thin Solid Films 515(19), 7486–7489 (2007).

[Crossref]

D. M. Caughey and R. E. Thomas, “Carrier mobilities in silicon empirically related to doping and field,” Proc. IEEE 55(12), 2192–2193 (1967).

[Crossref]

J. R. Chelikowsky and M. L. Cohen, “Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors,” Phys. Rev. B 14(2), 556–582 (1976).

[Crossref]

C. Schinke, P. Christian Peest, J. Schmidt, R. Brendel, K. Bothe, M. R. Vogt, I. Kröger, S. Winter, A. Schirmacher, S. Lim, H. T. Nguyen, and D. MacDonald, “Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon,” AIP Adv. 5(6), 067168 (2015).

[Crossref]

R. Chwang, B. J. Smith, and C. R. Crowell, “Contact size effects on the van der Pauw method for resistivity and Hall coefficient measurement,” Solid-State Electron. 17(12), 1217–1227 (1974).

[Crossref]

J. R. Chelikowsky and M. L. Cohen, “Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors,” Phys. Rev. B 14(2), 556–582 (1976).

[Crossref]

F. A. Hegmann, O. Ostroverkhova, and D. G. Cooke, “Probing Organic Semiconductors with Terahertz Pulses," in Photophysics of Molecular Materials (John Wiley & Sons, Ltd, 2006), pp. 367–428.

R. Chwang, B. J. Smith, and C. R. Crowell, “Contact size effects on the van der Pauw method for resistivity and Hall coefficient measurement,” Solid-State Electron. 17(12), 1217–1227 (1974).

[Crossref]

K. Ellmer, “Hall Effect and Conductivity Measurements in Semiconductor Crystals and Thin Films," in Characterization of Materials (American Cancer Society, 2012), pp. 1–16.

O. Esenturk, J. S. Melinger, and E. J. Heilweil, “Terahertz mobility measurements on poly-3-hexylthiophene films: Device comparison, molecular weight, and film processing effects,” J. Appl. Phys. 103(2), 023102 (2008).

[Crossref]

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys. 94(10), 6447–6455 (2003).

[Crossref]

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys. 94(10), 6447–6455 (2003).

[Crossref]

W. R. Thurber, R. L. Mattis, Y. M. Liu, and J. J. Filliben, “Resistivity-Dopant Density Relationship for Boron-Doped Silicon,” J. Electrochem. Soc. 127(10), 2291–2294 (1980).

[Crossref]

W. R. Thurber, R. L. Mattis, Y. M. Liu, and J. J. Filliben, “Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon,” J. Electrochem. Soc. 127(8), 1807–1812 (1980).

[Crossref]

F. Schindler, J. Geilker, W. Kwapil, W. Warta, and M. C. Schubert, “Hall mobility in multicrystalline silicon,” J. Appl. Phys. 110(4), 043722 (2011).

[Crossref]

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys. 94(10), 6447–6455 (2003).

[Crossref]

C. M. Cirloganu, L. A. Padilha, D. A. Fishman, S. Webster, D. J. Hagan, and E. W. V. Stryland, “Extremely nondegenerate two-photon absorption in direct-gap semiconductors [Invited],” Opt. Express 19(23), 22951–22960 (2011).

[Crossref]

A. A. Said, M. Sheik-Bahae, D. J. Hagan, T. H. Wei, J. Wang, J. Young, and E. W. V. Stryland, “Determination of bound-electronic and free-carrier nonlinearities in ZnSe, GaAs, CdTe, and ZnTe,” J. Opt. Soc. Am. B 9(3), 405–414 (1992).

[Crossref]

K. J. Willis, S. C. Hagness, and I. Knezevic, “A generalized Drude model for doped silicon at terahertz frequencies derived from microscopic transport simulation,” Appl. Phys. Lett. 102(12), 122113 (2013).

[Crossref]

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys. 94(10), 6447–6455 (2003).

[Crossref]

F. A. Hegmann, O. Ostroverkhova, and D. G. Cooke, “Probing Organic Semiconductors with Terahertz Pulses," in Photophysics of Molecular Materials (John Wiley & Sons, Ltd, 2006), pp. 367–428.

J. K. Wahlstrand and E. J. Heilweil, “Contactless THz-based bulk semiconductor mobility measurements using two-photon excitation,” Opt. Express 26(23), 29848–29853 (2018).

[Crossref]

B. G. Alberding, W. R. Thurber, and E. J. Heilweil, “Direct comparison of time-resolved terahertz spectroscopy and Hall Van der Pauw methods for measurement of carrier conductivity and mobility in bulk semiconductors,” J. Opt. Soc. Am. B 34(7), 1392–1406 (2017).

[Crossref]

O. Esenturk, J. S. Melinger, and E. J. Heilweil, “Terahertz mobility measurements on poly-3-hexylthiophene films: Device comparison, molecular weight, and film processing effects,” J. Appl. Phys. 103(2), 023102 (2008).

[Crossref]

R. Ulbricht, E. Hendry, J. Shan, T. F. Heinz, and M. Bonn, “Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy,” Rev. Mod. Phys. 83(2), 543–586 (2011).

[Crossref]

R. Ulbricht, E. Hendry, J. Shan, T. F. Heinz, and M. Bonn, “Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy,” Rev. Mod. Phys. 83(2), 543–586 (2011).

[Crossref]

J. Lloyd-Hughes and T.-I. Jeon, “A Review of the Terahertz Conductivity of Bulk and Nano-Materials | SpringerLink," https://link.springer.com/article/10.1007%2Fs10762-012-9905-y .

D. E. Aspnes, S. M. Kelso, R. A. Logan, and R. Bhat, “Optical properties of AlxGa1−x As,” J. Appl. Phys. 60(2), 754–767 (1986).

[Crossref]

C. Kittel, Introduction to Solid State Physics, 8th Edition (John Wiley & Sons Inc., 2005).

K. J. Willis, S. C. Hagness, and I. Knezevic, “A generalized Drude model for doped silicon at terahertz frequencies derived from microscopic transport simulation,” Appl. Phys. Lett. 102(12), 122113 (2013).

[Crossref]

C. Schinke, P. Christian Peest, J. Schmidt, R. Brendel, K. Bothe, M. R. Vogt, I. Kröger, S. Winter, A. Schirmacher, S. Lim, H. T. Nguyen, and D. MacDonald, “Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon,” AIP Adv. 5(6), 067168 (2015).

[Crossref]

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys. 94(10), 6447–6455 (2003).

[Crossref]

F. Schindler, J. Geilker, W. Kwapil, W. Warta, and M. C. Schubert, “Hall mobility in multicrystalline silicon,” J. Appl. Phys. 110(4), 043722 (2011).

[Crossref]

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys. 94(10), 6447–6455 (2003).

[Crossref]

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys. 94(10), 6447–6455 (2003).

[Crossref]

C. Schinke, P. Christian Peest, J. Schmidt, R. Brendel, K. Bothe, M. R. Vogt, I. Kröger, S. Winter, A. Schirmacher, S. Lim, H. T. Nguyen, and D. MacDonald, “Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon,” AIP Adv. 5(6), 067168 (2015).

[Crossref]

W. R. Thurber, R. L. Mattis, Y. M. Liu, and J. J. Filliben, “Resistivity-Dopant Density Relationship for Boron-Doped Silicon,” J. Electrochem. Soc. 127(10), 2291–2294 (1980).

[Crossref]

W. R. Thurber, R. L. Mattis, Y. M. Liu, and J. J. Filliben, “Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon,” J. Electrochem. Soc. 127(8), 1807–1812 (1980).

[Crossref]

J. Lloyd-Hughes and T.-I. Jeon, “A Review of the Terahertz Conductivity of Bulk and Nano-Materials | SpringerLink," https://link.springer.com/article/10.1007%2Fs10762-012-9905-y .

D. E. Aspnes, S. M. Kelso, R. A. Logan, and R. Bhat, “Optical properties of AlxGa1−x As,” J. Appl. Phys. 60(2), 754–767 (1986).

[Crossref]

C. Schinke, P. Christian Peest, J. Schmidt, R. Brendel, K. Bothe, M. R. Vogt, I. Kröger, S. Winter, A. Schirmacher, S. Lim, H. T. Nguyen, and D. MacDonald, “Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon,” AIP Adv. 5(6), 067168 (2015).

[Crossref]

W. R. Thurber, R. L. Mattis, Y. M. Liu, and J. J. Filliben, “Resistivity-Dopant Density Relationship for Boron-Doped Silicon,” J. Electrochem. Soc. 127(10), 2291–2294 (1980).

[Crossref]

W. R. Thurber, R. L. Mattis, Y. M. Liu, and J. J. Filliben, “Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon,” J. Electrochem. Soc. 127(8), 1807–1812 (1980).

[Crossref]

O. Esenturk, J. S. Melinger, and E. J. Heilweil, “Terahertz mobility measurements on poly-3-hexylthiophene films: Device comparison, molecular weight, and film processing effects,” J. Appl. Phys. 103(2), 023102 (2008).

[Crossref]

C. Schinke, P. Christian Peest, J. Schmidt, R. Brendel, K. Bothe, M. R. Vogt, I. Kröger, S. Winter, A. Schirmacher, S. Lim, H. T. Nguyen, and D. MacDonald, “Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon,” AIP Adv. 5(6), 067168 (2015).

[Crossref]

F. A. Hegmann, O. Ostroverkhova, and D. G. Cooke, “Probing Organic Semiconductors with Terahertz Pulses," in Photophysics of Molecular Materials (John Wiley & Sons, Ltd, 2006), pp. 367–428.

A. Penzkofer and A. A. Bugayev, “Two-photon absorption and emission dynamics of bulk GaAs,” Opt. Quantum Electron. 21(4), 283–306 (1989).

[Crossref]

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys. 94(10), 6447–6455 (2003).

[Crossref]

D. L. Rode, “Chapter 1 Low-Field Electron Transport," in Semiconductors and Semimetals (Academic Press, N.Y., 1975), Vol. 10, pp. 1–86.

A. D. Bristow, N. Rotenberg, and H. M. van Driel, “Two-photon absorption and Kerr coefficients of silicon for 850–2200nm,” Appl. Phys. Lett. 90(19), 191104 (2007).

[Crossref]

A. A. Said, M. Sheik-Bahae, D. J. Hagan, T. H. Wei, J. Wang, J. Young, and E. W. V. Stryland, “Determination of bound-electronic and free-carrier nonlinearities in ZnSe, GaAs, CdTe, and ZnTe,” J. Opt. Soc. Am. B 9(3), 405–414 (1992).

[Crossref]

F. Schindler, J. Geilker, W. Kwapil, W. Warta, and M. C. Schubert, “Hall mobility in multicrystalline silicon,” J. Appl. Phys. 110(4), 043722 (2011).

[Crossref]

C. Schinke, P. Christian Peest, J. Schmidt, R. Brendel, K. Bothe, M. R. Vogt, I. Kröger, S. Winter, A. Schirmacher, S. Lim, H. T. Nguyen, and D. MacDonald, “Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon,” AIP Adv. 5(6), 067168 (2015).

[Crossref]

C. Schinke, P. Christian Peest, J. Schmidt, R. Brendel, K. Bothe, M. R. Vogt, I. Kröger, S. Winter, A. Schirmacher, S. Lim, H. T. Nguyen, and D. MacDonald, “Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon,” AIP Adv. 5(6), 067168 (2015).

[Crossref]

C. Schinke, P. Christian Peest, J. Schmidt, R. Brendel, K. Bothe, M. R. Vogt, I. Kröger, S. Winter, A. Schirmacher, S. Lim, H. T. Nguyen, and D. MacDonald, “Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon,” AIP Adv. 5(6), 067168 (2015).

[Crossref]

M. C. Beard, G. M. Turner, and C. A. Schmuttenmaer, “Terahertz Spectroscopy,” J. Phys. Chem. B 106(29), 7146–7159 (2002).

[Crossref]

M. C. Beard, G. M. Turner, and C. A. Schmuttenmaer, “Transient photoconductivity in GaAs as measured by time-resolved terahertz spectroscopy,” Phys. Rev. B 62(23), 15764–15777 (2000).

[Crossref]

F. Schindler, J. Geilker, W. Kwapil, W. Warta, and M. C. Schubert, “Hall mobility in multicrystalline silicon,” J. Appl. Phys. 110(4), 043722 (2011).

[Crossref]

G. A. F. Seber and C. J. Wild, Nonlinear Regression (John Wiley & Sons, 2003).

R. Ulbricht, E. Hendry, J. Shan, T. F. Heinz, and M. Bonn, “Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy,” Rev. Mod. Phys. 83(2), 543–586 (2011).

[Crossref]

A. A. Said, M. Sheik-Bahae, D. J. Hagan, T. H. Wei, J. Wang, J. Young, and E. W. V. Stryland, “Determination of bound-electronic and free-carrier nonlinearities in ZnSe, GaAs, CdTe, and ZnTe,” J. Opt. Soc. Am. B 9(3), 405–414 (1992).

[Crossref]

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys. 94(10), 6447–6455 (2003).

[Crossref]

R. Chwang, B. J. Smith, and C. R. Crowell, “Contact size effects on the van der Pauw method for resistivity and Hall coefficient measurement,” Solid-State Electron. 17(12), 1217–1227 (1974).

[Crossref]

C. M. Cirloganu, L. A. Padilha, D. A. Fishman, S. Webster, D. J. Hagan, and E. W. V. Stryland, “Extremely nondegenerate two-photon absorption in direct-gap semiconductors [Invited],” Opt. Express 19(23), 22951–22960 (2011).

[Crossref]

A. A. Said, M. Sheik-Bahae, D. J. Hagan, T. H. Wei, J. Wang, J. Young, and E. W. V. Stryland, “Determination of bound-electronic and free-carrier nonlinearities in ZnSe, GaAs, CdTe, and ZnTe,” J. Opt. Soc. Am. B 9(3), 405–414 (1992).

[Crossref]

S. M. Sze, Physics of Semiconductor Devices, Second (John Wiley & Sons, Inc., 1981).

F. Szmulowicz, “Calculation of the mobility and the Hall factor for doped p-type silicon,” Phys. Rev. B 34(6), 4031–4047 (1986).

[Crossref]

D. M. Caughey and R. E. Thomas, “Carrier mobilities in silicon empirically related to doping and field,” Proc. IEEE 55(12), 2192–2193 (1967).

[Crossref]

B. G. Alberding, W. R. Thurber, and E. J. Heilweil, “Direct comparison of time-resolved terahertz spectroscopy and Hall Van der Pauw methods for measurement of carrier conductivity and mobility in bulk semiconductors,” J. Opt. Soc. Am. B 34(7), 1392–1406 (2017).

[Crossref]

W. R. Thurber, R. L. Mattis, Y. M. Liu, and J. J. Filliben, “Resistivity-Dopant Density Relationship for Boron-Doped Silicon,” J. Electrochem. Soc. 127(10), 2291–2294 (1980).

[Crossref]

W. R. Thurber, R. L. Mattis, Y. M. Liu, and J. J. Filliben, “Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon,” J. Electrochem. Soc. 127(8), 1807–1812 (1980).

[Crossref]

M. C. Beard, G. M. Turner, and C. A. Schmuttenmaer, “Terahertz Spectroscopy,” J. Phys. Chem. B 106(29), 7146–7159 (2002).

[Crossref]

M. C. Beard, G. M. Turner, and C. A. Schmuttenmaer, “Transient photoconductivity in GaAs as measured by time-resolved terahertz spectroscopy,” Phys. Rev. B 62(23), 15764–15777 (2000).

[Crossref]

R. Ulbricht, E. Hendry, J. Shan, T. F. Heinz, and M. Bonn, “Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy,” Rev. Mod. Phys. 83(2), 543–586 (2011).

[Crossref]

A. D. Bristow, N. Rotenberg, and H. M. van Driel, “Two-photon absorption and Kerr coefficients of silicon for 850–2200nm,” Appl. Phys. Lett. 90(19), 191104 (2007).

[Crossref]

T. Skauli, P. S. Kuo, K. L. Vodopyanov, T. J. Pinguet, O. Levi, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys. 94(10), 6447–6455 (2003).

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