Abstract

Gallium oxide (Ga2O3) has been studied as one of the most promising wide bandgap semiconductors during the past decade. Here, we prepared high quality β-Ga2O3 films by pulsed laser deposition. β-Ga2O3 films of different thicknesses were achieved and their crystal properties were comprehensively studied. As thickness increases, grain size and surface roughness are both increased. Based on these β-Ga2O3 films, a series of ultraviolet (UV) photodetectors with interdigital electrodes structure were prepared. These devices embrace an ultralow dark current of 100 fA, and high photocurrent on/off ratio of 10E8 under UV light illumination. The photoresponse time is 4 ms which is faster than most of previous works. This work paves the way for the potential application of Ga2O3 in the field of UV detection.

© 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  44. X. H. Chen, S. Han, Y. M. Lu, P. J. Cao, W. J. Liu, Y. X. Zeng, F. Jia, W. Y. Xu, X. K. Liu, and D. L. Zhu, “High signal/noise ratio and high-speed deep UV detector on β-Ga2O3 thin film composed of both (400) and (-201) orientation β-Ga2O3 deposited by the PLD method,” J. Alloys Compd. 747, 869–878 (2018).
    [Crossref]
  45. W. Cui, D. Guo, X. Zhao, Z. Wu, P. Li, L. Li, C. Cui, and W. Tang, “Solar-blind photodetector based on Ga2O3 nanowires array film growth from inserted Al2O3 ultrathin interlayers for improving responsivity,” RSC Adv. 6(103), 100683 (2016).
    [Crossref]
  46. X. Wang, Z. Chen, D. Guo, X. Zhang, Z. Wu, P. Li, and W. Tang, “Optimizing the performance of a β-Ga2O3 solar-blind UV photodetector by compromising between photoabsorption and electric field distribution,” Opt. Mater. Express 8(9), 2918–2927 (2018).
    [Crossref]
  47. A. A. Balandin, “Low-frequency 1/f noise in graphene devices,” Nat. Nanotechnol. 8(8), 549–555 (2013).
    [Crossref]

2019 (2)

X. Chen, F. Ren, S. Gu, and J. Ye, “Review of gallium-oxide-based solar-blind ultraviolet photodetectors,” Photonics Res. 7(4), 381–415 (2019).
[Crossref]

S. J. Hao, M. Hetzl, F. Schuster, K. Danielewicz, A. Bergmaier, G. Dollinger, Q. L. Sai, C. T. Xia, T. Hoffmann, M. Wiesinger, S. Matich, W. Aigner, and M. Stutzmann, “Growth and characterization of β-Ga2O3 thin films on different substrates,” J. Appl. Phys. 125(10), 105701 (2019).
[Crossref]

2018 (5)

Y. Xu, Z. An, L. Zhang, Q. Feng, J. Zhang, C. Zhang, and Y. Hao, “Solar blind deep ultraviolet β-Ga2O3 photodetectors grown on sapphire by the Mist-CVD method,” Opt. Mater. Express 8(9), 2941–2947 (2018).
[Crossref]

S. J. Pearton, J. Yang, P. H. Cary, F. Ren, J. Kim, M. J. Tadjer, and M. A. Mastro, “A review of Ga2O3 materials, processing, and devices,” Appl. Phys. Rev. 5(1), 011301 (2018).
[Crossref]

Z. Feng, L. Huang, Q. Feng, X. Li, H. Zhang, W. Tang, J. Zhang, and Y. Hao, “Influence of annealing atmosphere on the performance of a β-Ga2O3 thin film and photodetector,” Opt. Mater. Express 8(8), 2229–2237 (2018).
[Crossref]

X. H. Chen, S. Han, Y. M. Lu, P. J. Cao, W. J. Liu, Y. X. Zeng, F. Jia, W. Y. Xu, X. K. Liu, and D. L. Zhu, “High signal/noise ratio and high-speed deep UV detector on β-Ga2O3 thin film composed of both (400) and (-201) orientation β-Ga2O3 deposited by the PLD method,” J. Alloys Compd. 747, 869–878 (2018).
[Crossref]

X. Wang, Z. Chen, D. Guo, X. Zhang, Z. Wu, P. Li, and W. Tang, “Optimizing the performance of a β-Ga2O3 solar-blind UV photodetector by compromising between photoabsorption and electric field distribution,” Opt. Mater. Express 8(9), 2918–2927 (2018).
[Crossref]

2017 (7)

Y. H. An, Y. S. Zhi, W. Cui, X. L. Zhao, Z. P. Wu, D. Y. Guo, P. G. Li, and W. H. Tang, “Thickness Tuning Photoelectric Properties of β-Ga2O3 Thin Film Based Photodetectors,” J. Nanosci. Nanotechnol. 17(12), 9091–9094 (2017).
[Crossref]

A. Singh Pratiyush, S. Krishnamoorthy, S. Vishnu Solanke, Z. Xia, R. Muralidharan, S. Rajan, and D. N. Nath, “High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector,” Appl. Phys. Lett. 110(22), 221107 (2017).
[Crossref]

L. X. Qian, Y. Wang, Z. H. Wu, T. Sheng, and X. Z. Liu, “β-Ga2O3 solar-blind deep-ultraviolet photodetector based on annealed sapphire substrate,” Vacuum 140, 106–110 (2017).
[Crossref]

H. Zhou, M. Si, S. Alghamdi, G. Qiu, L. Yang, and P. D. Ye, “High-Performance Depletion/Enhancement-ode β-Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm,” IEEE Electron Device Lett. 38(1), 103–106 (2017).
[Crossref]

H. von Wenckstern, “Group-III Sesquioxides: Growth, Physical Properties and Devices,” Adv. Electron. Mater. 3(9), 1600350 (2017).
[Crossref]

A. Gundimeda, S. Krishna, N. Aggarwal, A. Sharma, N. D. Sharma, K. K. Maurya, S. Husale, and G. Gupta, “Fabrication of non-polar GaN based highly responsive and fast UV photodetector,” Appl. Phys. Lett. 110(10), 103507 (2017).
[Crossref]

L.-X. Qian, H.-F. Zhang, P. T. Lai, Z.-H. Wu, and X.-Z. Liu, “High-sensitivity β-Ga2O3 solar-blind photodetector on high-temperature pretreated c-plane sapphire substrate,” Opt. Mater. Express 7(10), 3643–3653 (2017).
[Crossref]

2016 (2)

W. E. Mahmoud, “Solar blind avalanche photodetector based on the cation exchange growth of β-Ga2O3/SnO2 bilayer heterostructure thin film,” Sol. Energy Mater. Sol. Cells 152, 65–72 (2016).
[Crossref]

W. Cui, D. Guo, X. Zhao, Z. Wu, P. Li, L. Li, C. Cui, and W. Tang, “Solar-blind photodetector based on Ga2O3 nanowires array film growth from inserted Al2O3 ultrathin interlayers for improving responsivity,” RSC Adv. 6(103), 100683 (2016).
[Crossref]

2015 (4)

2014 (3)

D. Guo, Z. Wu, P. Li, Y. An, H. Liu, X. Guo, H. Yan, G. Wang, C. Sun, L. Li, and W. Tang, “Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology,” Opt. Mater. Express 4(5), 1067–1076 (2014).
[Crossref]

G. Wagner, M. Baldini, D. Gogova, M. Schmidbauer, R. Schewski, M. Albrecht, Z. Galazka, D. Klimm, and R. Fornari, “Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy,” Phys. Status Solidi A 211(1), 27–33 (2014).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

2013 (4)

C.-Y. Cho, Y. Zhang, E. Cicek, B. Rahnema, Y. Bai, R. McClintock, and M. Razeghi, “Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111),” Appl. Phys. Lett. 102(21), 211110 (2013).
[Crossref]

H. Y. Playford, A. C. Hannon, E. R. Barney, and R. I. Walton, “Structures of uncharacterised polymorphs of gallium oxide from total neutron diffraction,” Chem. Eur. J. 19(8), 2803–2813 (2013).
[Crossref]

P. Ravadgar, R. H. Horng, S. D. Yao, H. Y. Lee, B. R. Wu, S. L. Ou, and L. W. Tu, “Effects of crystallinity and point defects on optoelectronic applications of β-Ga2O3 epilayers,” Opt. Express 21(21), 24599–24610 (2013).
[Crossref]

A. A. Balandin, “Low-frequency 1/f noise in graphene devices,” Nat. Nanotechnol. 8(8), 549–555 (2013).
[Crossref]

2009 (2)

N. D. Cuong, Y. W. Park, and S. G. Yoon, “Microstructural and electrical properties of Ga2O3 nanowires grown at various temperatures by vapor–liquid–solid technique,” Sens. Actuators, B 140(1), 240–244 (2009).
[Crossref]

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
[Crossref]

2008 (3)

Z. Liu, T. Yamazaki, Y. Shen, T. Kikuta, N. Nakatani, and Y. Li, “O2 and CO sensing of Ga2O3 multiple nanowire gas sensors,” Sens. Actuators, B 129(2), 666–670 (2008).
[Crossref]

T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, “Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3 Substrates,” Appl. Phys. Express 1(1), 011202 (2008).
[Crossref]

S.-J. Chang, Y. D. Jhou, Y. C. Lin, S. L. Wu, C. H. Chen, T. C. Wen, and L. W. Wu, “GaN-Based MSM Photodetectors Prepared on Patterned Sapphire Substrates,” IEEE Photonics Technol. Lett. 20(22), 1866–1868 (2008).
[Crossref]

2007 (2)

S. Yoshioka, H. Hayashi, A. Kuwabara, F. Oba, K. Matsunaga, and I. Tanaka, “Structures and energetics of Ga2O3 polymorphs,” J. Phys.: Condens. Matter 19(34), 346211 (2007).
[Crossref]

T. Oshima, T. Okuno, and S. Fujita, “Ga2O3 Thin Film Growth onc-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors,” Jpn. J. Appl. Phys. 46(11), 7217–7220 (2007).
[Crossref]

2006 (2)

H. He, M. A. Blanco, and R. Pandey, “Electronic and thermodynamic properties of β-Ga2O3,” Appl. Phys. Lett. 88(26), 261904 (2006).
[Crossref]

H. He, R. Orlando, M. A. Blanco, R. Pandey, E. Amzallag, I. Baraille, and M. Rérat, “First-principles study of the structural, electronic, and optical properties of Ga2O3 in its monoclinic and hexagonal phases,” Phys. Rev. B 74(19), 195123 (2006).
[Crossref]

2005 (1)

P. Kroll, R. Dronskowski, and M. Martin, “Formation of spinel-type gallium oxynitrides: a density-functional study of binary and ternary phases in the system Ga–O–N,” J. Mater. Chem. 15(32), 3296–3302 (2005).
[Crossref]

2004 (1)

T. Gruber, C. Kirchner, R. Kling, F. Reuss, and A. Waag, “ZnMgO epilayers and ZnO–ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region,” Appl. Phys. Lett. 84(26), 5359–5361 (2004).
[Crossref]

2003 (1)

B. Potì, M. T. Todaro, M. C. Frassanito, A. Pomarico, A. Passaseo, M. Lomascolo, R. Cingolani, and M. De Vittorio, “High responsivity GaN-based UV detectors,” Electron. Lett. 39(24), 1747 (2003).
[Crossref]

2002 (1)

Y. Huang, X. Duan, Y. Cui, and M. Lieber, “Gallium nitride nanowire nanodevices,” Nano Lett. 2(2), 101–104 (2002).
[Crossref]

2001 (2)

M. Ogita, K. Higo, Y. Nakanishi, and Y. Hatanaka, “Ga2O3 thin film for oxygen sensor at high temperature,” Appl. Surf. Sci. 175-176, 721–725 (2001).
[Crossref]

M. Bender, N. Katsarakis, E. Gagaoudakis, E. Hourdakis, E. Douloufakis, V. Cimalla, and G. Kiriakidis, “Dependence of the photoreduction and oxidation behavior of indium oxide films on substrate temperature and film thickness,” J. Appl. Phys. 90(10), 5382–5387 (2001).
[Crossref]

1999 (1)

W. S. Cho and M. Kakihana, “Crystallization of ceramic pigment CoAl2O4 nanocrystals from Co–Al metal organic precursor,” J. Alloys Compd. 287(1-2), 87–90 (1999).
[Crossref]

1998 (1)

L. A. Kosyachenko, V. M. Sklyarchuk, and Y. F. Sklyarchuk, “Electrical and photoelectric properties of au–sic schottky barrier diodes,” Solid-State Electron. 42(1), 145–151 (1998).
[Crossref]

1983 (1)

S. Nishino, J. A. Powell, and H. A. Will, “Production of large-area single-crystal wafers of cubic SiC for semiconductor devices,” Appl. Phys. Lett. 42(5), 460–462 (1983).
[Crossref]

1967 (1)

M. Marezio and J. P. Remeika, “Bond Lengths in the α-Ga2O3 Structure and the High-Pressure Phase of Ga2−xFexO3,” J. Chem. Phys. 46(5), 1862–1865 (1967).
[Crossref]

1966 (1)

J. P. Remeika and M. Marezio, “GROWTH OF α-Ga2O3 SINGLE CRYSTALS AT 44 KBARS,” Appl. Phys. Lett. 8(4), 87–88 (1966).
[Crossref]

Aggarwal, N.

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Arai, N.

R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
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H. He, M. A. Blanco, and R. Pandey, “Electronic and thermodynamic properties of β-Ga2O3,” Appl. Phys. Lett. 88(26), 261904 (2006).
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X. H. Chen, S. Han, Y. M. Lu, P. J. Cao, W. J. Liu, Y. X. Zeng, F. Jia, W. Y. Xu, X. K. Liu, and D. L. Zhu, “High signal/noise ratio and high-speed deep UV detector on β-Ga2O3 thin film composed of both (400) and (-201) orientation β-Ga2O3 deposited by the PLD method,” J. Alloys Compd. 747, 869–878 (2018).
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W. S. Cho and M. Kakihana, “Crystallization of ceramic pigment CoAl2O4 nanocrystals from Co–Al metal organic precursor,” J. Alloys Compd. 287(1-2), 87–90 (1999).
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D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
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W. Cui, D. Guo, X. Zhao, Z. Wu, P. Li, L. Li, C. Cui, and W. Tang, “Solar-blind photodetector based on Ga2O3 nanowires array film growth from inserted Al2O3 ultrathin interlayers for improving responsivity,” RSC Adv. 6(103), 100683 (2016).
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Feng, Q.

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Feng, Z.

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X. Chen, F. Ren, S. Gu, and J. Ye, “Review of gallium-oxide-based solar-blind ultraviolet photodetectors,” Photonics Res. 7(4), 381–415 (2019).
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Guo, D. Y.

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A. Gundimeda, S. Krishna, N. Aggarwal, A. Sharma, N. D. Sharma, K. K. Maurya, S. Husale, and G. Gupta, “Fabrication of non-polar GaN based highly responsive and fast UV photodetector,” Appl. Phys. Lett. 110(10), 103507 (2017).
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H. Y. Playford, A. C. Hannon, E. R. Barney, and R. I. Walton, “Structures of uncharacterised polymorphs of gallium oxide from total neutron diffraction,” Chem. Eur. J. 19(8), 2803–2813 (2013).
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S. J. Hao, M. Hetzl, F. Schuster, K. Danielewicz, A. Bergmaier, G. Dollinger, Q. L. Sai, C. T. Xia, T. Hoffmann, M. Wiesinger, S. Matich, W. Aigner, and M. Stutzmann, “Growth and characterization of β-Ga2O3 thin films on different substrates,” J. Appl. Phys. 125(10), 105701 (2019).
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Hoffmann, T.

S. J. Hao, M. Hetzl, F. Schuster, K. Danielewicz, A. Bergmaier, G. Dollinger, Q. L. Sai, C. T. Xia, T. Hoffmann, M. Wiesinger, S. Matich, W. Aigner, and M. Stutzmann, “Growth and characterization of β-Ga2O3 thin films on different substrates,” J. Appl. Phys. 125(10), 105701 (2019).
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Y. Huang, X. Duan, Y. Cui, and M. Lieber, “Gallium nitride nanowire nanodevices,” Nano Lett. 2(2), 101–104 (2002).
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A. Gundimeda, S. Krishna, N. Aggarwal, A. Sharma, N. D. Sharma, K. K. Maurya, S. Husale, and G. Gupta, “Fabrication of non-polar GaN based highly responsive and fast UV photodetector,” Appl. Phys. Lett. 110(10), 103507 (2017).
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S.-J. Chang, Y. D. Jhou, Y. C. Lin, S. L. Wu, C. H. Chen, T. C. Wen, and L. W. Wu, “GaN-Based MSM Photodetectors Prepared on Patterned Sapphire Substrates,” IEEE Photonics Technol. Lett. 20(22), 1866–1868 (2008).
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X. H. Chen, S. Han, Y. M. Lu, P. J. Cao, W. J. Liu, Y. X. Zeng, F. Jia, W. Y. Xu, X. K. Liu, and D. L. Zhu, “High signal/noise ratio and high-speed deep UV detector on β-Ga2O3 thin film composed of both (400) and (-201) orientation β-Ga2O3 deposited by the PLD method,” J. Alloys Compd. 747, 869–878 (2018).
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Jung, Y.

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W. S. Cho and M. Kakihana, “Crystallization of ceramic pigment CoAl2O4 nanocrystals from Co–Al metal organic precursor,” J. Alloys Compd. 287(1-2), 87–90 (1999).
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M. Bender, N. Katsarakis, E. Gagaoudakis, E. Hourdakis, E. Douloufakis, V. Cimalla, and G. Kiriakidis, “Dependence of the photoreduction and oxidation behavior of indium oxide films on substrate temperature and film thickness,” J. Appl. Phys. 90(10), 5382–5387 (2001).
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M. Bender, N. Katsarakis, E. Gagaoudakis, E. Hourdakis, E. Douloufakis, V. Cimalla, and G. Kiriakidis, “Dependence of the photoreduction and oxidation behavior of indium oxide films on substrate temperature and film thickness,” J. Appl. Phys. 90(10), 5382–5387 (2001).
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G. Wagner, M. Baldini, D. Gogova, M. Schmidbauer, R. Schewski, M. Albrecht, Z. Galazka, D. Klimm, and R. Fornari, “Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy,” Phys. Status Solidi A 211(1), 27–33 (2014).
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T. Gruber, C. Kirchner, R. Kling, F. Reuss, and A. Waag, “ZnMgO epilayers and ZnO–ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region,” Appl. Phys. Lett. 84(26), 5359–5361 (2004).
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R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, “Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing,” Appl. Phys. Lett. 94(22), 222102 (2009).
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[Crossref]

Waag, A.

T. Gruber, C. Kirchner, R. Kling, F. Reuss, and A. Waag, “ZnMgO epilayers and ZnO–ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region,” Appl. Phys. Lett. 84(26), 5359–5361 (2004).
[Crossref]

Wagner, G.

G. Wagner, M. Baldini, D. Gogova, M. Schmidbauer, R. Schewski, M. Albrecht, Z. Galazka, D. Klimm, and R. Fornari, “Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy,” Phys. Status Solidi A 211(1), 27–33 (2014).
[Crossref]

Walton, R. I.

H. Y. Playford, A. C. Hannon, E. R. Barney, and R. I. Walton, “Structures of uncharacterised polymorphs of gallium oxide from total neutron diffraction,” Chem. Eur. J. 19(8), 2803–2813 (2013).
[Crossref]

Wang, G.

Wang, S. P.

Wang, X.

Wang, Y.

L. X. Qian, Y. Wang, Z. H. Wu, T. Sheng, and X. Z. Liu, “β-Ga2O3 solar-blind deep-ultraviolet photodetector based on annealed sapphire substrate,” Vacuum 140, 106–110 (2017).
[Crossref]

Wen, T. C.

S.-J. Chang, Y. D. Jhou, Y. C. Lin, S. L. Wu, C. H. Chen, T. C. Wen, and L. W. Wu, “GaN-Based MSM Photodetectors Prepared on Patterned Sapphire Substrates,” IEEE Photonics Technol. Lett. 20(22), 1866–1868 (2008).
[Crossref]

Wiesinger, M.

S. J. Hao, M. Hetzl, F. Schuster, K. Danielewicz, A. Bergmaier, G. Dollinger, Q. L. Sai, C. T. Xia, T. Hoffmann, M. Wiesinger, S. Matich, W. Aigner, and M. Stutzmann, “Growth and characterization of β-Ga2O3 thin films on different substrates,” J. Appl. Phys. 125(10), 105701 (2019).
[Crossref]

Will, H. A.

S. Nishino, J. A. Powell, and H. A. Will, “Production of large-area single-crystal wafers of cubic SiC for semiconductor devices,” Appl. Phys. Lett. 42(5), 460–462 (1983).
[Crossref]

Wu, B. R.

Wu, L. W.

S.-J. Chang, Y. D. Jhou, Y. C. Lin, S. L. Wu, C. H. Chen, T. C. Wen, and L. W. Wu, “GaN-Based MSM Photodetectors Prepared on Patterned Sapphire Substrates,” IEEE Photonics Technol. Lett. 20(22), 1866–1868 (2008).
[Crossref]

Wu, S. L.

S.-J. Chang, Y. D. Jhou, Y. C. Lin, S. L. Wu, C. H. Chen, T. C. Wen, and L. W. Wu, “GaN-Based MSM Photodetectors Prepared on Patterned Sapphire Substrates,” IEEE Photonics Technol. Lett. 20(22), 1866–1868 (2008).
[Crossref]

Wu, Z.

Wu, Z. H.

L. X. Qian, Y. Wang, Z. H. Wu, T. Sheng, and X. Z. Liu, “β-Ga2O3 solar-blind deep-ultraviolet photodetector based on annealed sapphire substrate,” Vacuum 140, 106–110 (2017).
[Crossref]

Wu, Z. P.

Y. H. An, Y. S. Zhi, W. Cui, X. L. Zhao, Z. P. Wu, D. Y. Guo, P. G. Li, and W. H. Tang, “Thickness Tuning Photoelectric Properties of β-Ga2O3 Thin Film Based Photodetectors,” J. Nanosci. Nanotechnol. 17(12), 9091–9094 (2017).
[Crossref]

D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, “Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 105(2), 023507 (2014).
[Crossref]

Wu, Z.-H.

Wuu, D.-S.

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S. J. Hao, M. Hetzl, F. Schuster, K. Danielewicz, A. Bergmaier, G. Dollinger, Q. L. Sai, C. T. Xia, T. Hoffmann, M. Wiesinger, S. Matich, W. Aigner, and M. Stutzmann, “Growth and characterization of β-Ga2O3 thin films on different substrates,” J. Appl. Phys. 125(10), 105701 (2019).
[Crossref]

Xia, Z.

A. Singh Pratiyush, S. Krishnamoorthy, S. Vishnu Solanke, Z. Xia, R. Muralidharan, S. Rajan, and D. N. Nath, “High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector,” Appl. Phys. Lett. 110(22), 221107 (2017).
[Crossref]

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X. H. Chen, S. Han, Y. M. Lu, P. J. Cao, W. J. Liu, Y. X. Zeng, F. Jia, W. Y. Xu, X. K. Liu, and D. L. Zhu, “High signal/noise ratio and high-speed deep UV detector on β-Ga2O3 thin film composed of both (400) and (-201) orientation β-Ga2O3 deposited by the PLD method,” J. Alloys Compd. 747, 869–878 (2018).
[Crossref]

Xu, Y.

Yamazaki, T.

Z. Liu, T. Yamazaki, Y. Shen, T. Kikuta, N. Nakatani, and Y. Li, “O2 and CO sensing of Ga2O3 multiple nanowire gas sensors,” Sens. Actuators, B 129(2), 666–670 (2008).
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H. Zhou, M. Si, S. Alghamdi, G. Qiu, L. Yang, and P. D. Ye, “High-Performance Depletion/Enhancement-ode β-Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm,” IEEE Electron Device Lett. 38(1), 103–106 (2017).
[Crossref]

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Ye, J.

X. Chen, F. Ren, S. Gu, and J. Ye, “Review of gallium-oxide-based solar-blind ultraviolet photodetectors,” Photonics Res. 7(4), 381–415 (2019).
[Crossref]

Ye, P. D.

H. Zhou, M. Si, S. Alghamdi, G. Qiu, L. Yang, and P. D. Ye, “High-Performance Depletion/Enhancement-ode β-Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm,” IEEE Electron Device Lett. 38(1), 103–106 (2017).
[Crossref]

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N. D. Cuong, Y. W. Park, and S. G. Yoon, “Microstructural and electrical properties of Ga2O3 nanowires grown at various temperatures by vapor–liquid–solid technique,” Sens. Actuators, B 140(1), 240–244 (2009).
[Crossref]

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X. H. Chen, S. Han, Y. M. Lu, P. J. Cao, W. J. Liu, Y. X. Zeng, F. Jia, W. Y. Xu, X. K. Liu, and D. L. Zhu, “High signal/noise ratio and high-speed deep UV detector on β-Ga2O3 thin film composed of both (400) and (-201) orientation β-Ga2O3 deposited by the PLD method,” J. Alloys Compd. 747, 869–878 (2018).
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[Crossref]

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W. Cui, D. Guo, X. Zhao, Z. Wu, P. Li, L. Li, C. Cui, and W. Tang, “Solar-blind photodetector based on Ga2O3 nanowires array film growth from inserted Al2O3 ultrathin interlayers for improving responsivity,” RSC Adv. 6(103), 100683 (2016).
[Crossref]

Zhao, X. L.

Y. H. An, Y. S. Zhi, W. Cui, X. L. Zhao, Z. P. Wu, D. Y. Guo, P. G. Li, and W. H. Tang, “Thickness Tuning Photoelectric Properties of β-Ga2O3 Thin Film Based Photodetectors,” J. Nanosci. Nanotechnol. 17(12), 9091–9094 (2017).
[Crossref]

Zhi, Y. S.

Y. H. An, Y. S. Zhi, W. Cui, X. L. Zhao, Z. P. Wu, D. Y. Guo, P. G. Li, and W. H. Tang, “Thickness Tuning Photoelectric Properties of β-Ga2O3 Thin Film Based Photodetectors,” J. Nanosci. Nanotechnol. 17(12), 9091–9094 (2017).
[Crossref]

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H. Zhou, M. Si, S. Alghamdi, G. Qiu, L. Yang, and P. D. Ye, “High-Performance Depletion/Enhancement-ode β-Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm,” IEEE Electron Device Lett. 38(1), 103–106 (2017).
[Crossref]

W. Feng, H. Zhou, and F. Chen, “Impact of thickness on crystal structure and optical properties for thermally evaporated PbSe thin films,” Vacuum 114, 82–85 (2015).
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[Crossref]

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[Crossref]

T. Gruber, C. Kirchner, R. Kling, F. Reuss, and A. Waag, “ZnMgO epilayers and ZnO–ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region,” Appl. Phys. Lett. 84(26), 5359–5361 (2004).
[Crossref]

C.-Y. Cho, Y. Zhang, E. Cicek, B. Rahnema, Y. Bai, R. McClintock, and M. Razeghi, “Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111),” Appl. Phys. Lett. 102(21), 211110 (2013).
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W. Cui, D. Guo, X. Zhao, Z. Wu, P. Li, L. Li, C. Cui, and W. Tang, “Solar-blind photodetector based on Ga2O3 nanowires array film growth from inserted Al2O3 ultrathin interlayers for improving responsivity,” RSC Adv. 6(103), 100683 (2016).
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Z. Liu, T. Yamazaki, Y. Shen, T. Kikuta, N. Nakatani, and Y. Li, “O2 and CO sensing of Ga2O3 multiple nanowire gas sensors,” Sens. Actuators, B 129(2), 666–670 (2008).
[Crossref]

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W. E. Mahmoud, “Solar blind avalanche photodetector based on the cation exchange growth of β-Ga2O3/SnO2 bilayer heterostructure thin film,” Sol. Energy Mater. Sol. Cells 152, 65–72 (2016).
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W. Feng, H. Zhou, and F. Chen, “Impact of thickness on crystal structure and optical properties for thermally evaporated PbSe thin films,” Vacuum 114, 82–85 (2015).
[Crossref]

L. X. Qian, Y. Wang, Z. H. Wu, T. Sheng, and X. Z. Liu, “β-Ga2O3 solar-blind deep-ultraviolet photodetector based on annealed sapphire substrate,” Vacuum 140, 106–110 (2017).
[Crossref]

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Figures (4)

Fig. 1.
Fig. 1. (a) Molecular structure diagram of β-Ga2O3 crystal and its (-201) surfaces. (b) XRD patterns of β-Ga2O3 films with different thicknesses. (c) XRD rocking curves for (–201) plane of β-Ga2O3 films. (d) HR-TEM bright field images of #4. #1, #2, #3, #4 and #5 are the sample labels.
Fig. 2.
Fig. 2. (a)-(e) The cross-sectional images of β-Ga2O3 films. (f)-(j) AFM surface images of β-Ga2O3 films. The scalebar of (a) is 200 nm. The scalebar of (b)-(e) is 500 nm. The scalebar of (f)-(j) is 400 nm.
Fig. 3.
Fig. 3. (a) Optical image taken by microscope. (b) Schematic diagram of gallium oxide MSM ultraviolet photodetector. (c) The energy band diagrams of β-Ga2O3 MSM ultraviolet photodetector under dark and illumination conditions. (d) Current-voltage characteristics measured in dark and illumination for five photodetectors. (e) Photocurrent on/off ratio obtained as over 107 in logarithmic coordinates. (f) Transient response of β-Ga2O3 photodetectors, normalized response of photodetectors. During the test, the chopper frequency was set at 1 Hz, and bias was 20 V.
Fig. 4.
Fig. 4. (a) Photocurrent switching characteristics of β-Ga2O3 photodetectors. During the test, the chopper frequency was set at 1 Hz, and bias was 20 V. (b) NPD varied with frequency (f) and was measured at room temperature, VSD = 3 V was set according to the working conditions of the device. (c) Spectral responsivities of the DUV detectors based on β-Ga2O3 photodetector. The pattern in the inset shows the optical power density of different wavelengths of light from a xenon lamp. P in the figure expresses the power density of light.

Tables (2)

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Table 1. Comparison of film structures with different thicknesses.

Tables Icon

Table 2. Performance comparison of gallium oxide photodetectors with different thicknesses.

Equations (1)

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Size  = K λ / ( FW ( S )   c o s ( θ ) )

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