Abstract

The high-performance 395 nm GaN-based near-ultraviolet (UV) light emitting diodes (LEDs) on Si substrates have been obtained by designing an AlN buffer layer to decrease the dislocations density of the GaN layer. By adopting a multi-layer structure with a high- and low-V/III ratio alternation, a high-quality AlN buffer layer has been obtained with a small full-width at half-maximum (FWHM) for AlN(0002) X-ray rocking curve (XRC) of 648 arcsec and a small root-mean-square roughness of 0.11 nm. By applying the optimized AlN buffer layer, the high-quality GaN layer with GaN(0002) and GaN(10-12) XRC FWHM of 260 and 270 arcsec have been obtained, and the high-performance GaN-based near-UV LED wafers and chips have been fabricated accordingly. The as-fabricated near-UV LED chips exhibit a light output power of 550 mW with a forward voltage of 3.02 V at 350 mA, corresponding to a wall-plug efficiency of 52.0%. These chips with outstanding performance are of paramount importance in the application of curing, sterilization, efficient white lighting, etc.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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  1. J. T. Oh, Y. T. Moon, D. S. Kang, C. K. Park, J. W. Han, M. H. Jung, Y. J. Sung, H. H. Jeong, J. O. Song, and T. Y. Seong, “High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer,” Opt. Express 26(5), 5111–5117 (2018).
    [Crossref] [PubMed]
  2. J. Xu, W. Zhang, M. Peng, J. Dai, and C. Chen, “Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode,” Opt. Lett. 43(11), 2684–2687 (2018).
    [Crossref] [PubMed]
  3. I. H. Lee, A. Y. Polyakov, S. M. Hwang, N. M. Shmidt, E. I. Shabunina, N. A. Tal’nishnih, N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin, and S. J. Pearton, “Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs,” Appl. Phys. Lett. 111(6), 062103 (2017).
    [Crossref]
  4. M. P. Lin, C. J. Chen, L. W. Shan, and M. C. Wu, “Fabrication and characterization of 395 nm ultraviolet GaN light-emitting diodes,” Solid-State Electron. 135, 49–52 (2017).
    [Crossref]
  5. X. Feng, K. Wang, Y. Cheng, Y. Wei, and T. Yu, “High-performance near-UV LED grown by carbon nanotube assisted nanoheteroepitaxy,” Superlattices Microstruct. 109, 41–46 (2017).
    [Crossref]
  6. X. A. Cao, S. F. LeBoeuf, and T. E. Stecher, “Temperature-dependent electroluminescence of AlGaN-based UV LEDs,” IEEE Electron Device Lett. 27(5), 329–331 (2006).
    [Crossref]
  7. R. Liang, J. Zhang, S. Wang, Q. Chen, L. Xu, J. Dai, and C. Chen, “Investigation on thermal characterization of eutectic flip-chip UV-LEDs with different bonding voidage,” IEEE Trans. Electron Dev. 64(3), 1174–1179 (2017).
    [Crossref]
  8. G. Li, W. Wang, W. Yang, and H. Wang, “Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices,” Surf. Sci. Rep. 70(3), 380–423 (2015).
    [Crossref]
  9. A. Sarua, H. Ji, K. P. Hilton, D. J. Wallis, M. J. Uren, T. Martin, and M. Kuball, “Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices,” IEEE Trans. Electron Dev. 54(12), 3152–3158 (2007).
    [Crossref]
  10. A. Kadir, S. Srivastava, Z. Li, K. E. K. Lee, W. A. Sasangka, S. Gradecak, S. J. Chua, and E. A. Fitzgerald, “Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate,” Thin Solid Films 663(1), 73–78 (2018).
    [Crossref]
  11. D. Zhu, D. J. Wallis, and C. J. Humphreys, “Prospects of III-nitride optoelectronics grown on Si,” Rep. Prog. Phys. 76(10), 106501 (2013).
    [Crossref] [PubMed]
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    [Crossref]
  14. Z. Chen, J. Zhang, S. Xu, J. Xue, J. Zhu, T. Jiang, and Y. Hao, “Effect of AlN interlayer on the impurity incorporation of GaN film grown on sputtered AlN,” J. Alloys Compd. 710, 756–761 (2017).
    [Crossref]
  15. J. T. Oh, Y. T. Moon, J. H. Jang, J. H. Eum, Y. J. Sung, S. Y. Lee, J. O. Song, and T. Y. Seong, “High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer,” J. Alloys Compd. 732, 630–636 (2018).
    [Crossref]
  16. Y. Lin, M. Yang, W. Wang, Z. Lin, F. Gao, and G. Li, “High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer,” CrystEngComm 18(14), 2446–2454 (2016).
    [Crossref]
  17. W. Wang, Y. Lin, Y. Li, X. Li, L. Huang, Y. Zheng, Z. Lin, H. Wang, and G. Li, “High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(7), 1642–1650 (2018).
    [Crossref]
  18. Z. Chen, S. Newman, D. Brown, R. Chung, S. Keller, U. K. Mishra, S. P. Denbaars, and S. Nakamura, “High quality AlN grown on SiC by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93(19), 191906 (2008).
    [Crossref]
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    [Crossref]
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    [Crossref]
  21. C. F. Johnston, M. J. Kappers, and C. J. Humphreys, “Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method,” J. Appl. Phys. 105(7), 073102 (2009).
    [Crossref]
  22. Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities,” Appl. Phys. Lett. 94(11), 111109 (2009).
    [Crossref]
  23. S.-H. Han, D.-Y. Lee, H.-W. Shim, J. W. Lee, D.-J. Kim, S. Yoon, Y. S. Kim, and S.-T. Kim, “Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 102(25), 251123 (2013).
    [Crossref]
  24. Z. Quan, L. Wang, C. Zheng, J. Liu, and F. Jiang, “Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes,” J. Appl. Phys. 116(18), 183107 (2014).
    [Crossref]
  25. B. Leung, J. Han, and Q. Sun, “Strain relaxation and dislocation reduction in AlGaN step-graded buffer for crack-free GaN on Si(111),” Phys. Status Solidi., C Curr. Top. Solid State Phys. 11(3–4), 437–441 (2014).
    [Crossref]
  26. P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674–676 (2003).
    [Crossref]
  27. Y. Lin, S. Zhou, W. Wang, W. Yang, H. Qian, H. Wang, Z. Lin, Z. Liu, Y. Zhu, and G. Li, “Performance improvement of GaN-based light-emitting diodes grown on Si (111) substrates by controlling the reactor pressure for the GaN nucleation layer growth,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(7), 1484–1490 (2015).
    [Crossref]
  28. W. Wang, H. Yang, and G. Li, “Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 1(26), 4070–4077 (2013).
    [Crossref]
  29. Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mat. Sci. Eng. B 122(3), 184–187 (2005).
    [Crossref]
  30. S. F. Yu, R. M. Lin, S. J. Chang, and F. C. Chu, “Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes,” Appl. Phys. Express 5(2), 022102 (2012).
    [Crossref]
  31. Z. Lin, H. Wang, Y. Lin, W. Wang, and G. Li, “Stress management on underlying GaN-based epitaxial films: A new vision for achieving high-performance LEDs on Si substrates,” J. Appl. Phys. 122(20), 204503 (2017).
    [Crossref]
  32. M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
    [Crossref]
  33. S. H. Lee, X. Y. Guan, and J. S. Yu, “Optical, spectral, and thermal analyses of InGaN/GaN near-ultraviolet flip-chip light-emitting diodes with different package structures,” Phys. Status Solidi., A Appl. Mater. Sci. 214(5), 1600741 (2017).
    [Crossref]
  34. C. H. Tien, S. H. Chuang, H. M. Lo, S. Tasi, C. L. Wu, S. L. Ou, and D. S. Wuu, “ITO/nano-Ag plasmonic window applied for efficiency improvement of near-ultraviolet light emitting diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 214(3), 1600609 (2017).
    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref]

2018 (5)

J. T. Oh, Y. T. Moon, D. S. Kang, C. K. Park, J. W. Han, M. H. Jung, Y. J. Sung, H. H. Jeong, J. O. Song, and T. Y. Seong, “High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer,” Opt. Express 26(5), 5111–5117 (2018).
[Crossref] [PubMed]

J. Xu, W. Zhang, M. Peng, J. Dai, and C. Chen, “Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode,” Opt. Lett. 43(11), 2684–2687 (2018).
[Crossref] [PubMed]

A. Kadir, S. Srivastava, Z. Li, K. E. K. Lee, W. A. Sasangka, S. Gradecak, S. J. Chua, and E. A. Fitzgerald, “Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate,” Thin Solid Films 663(1), 73–78 (2018).
[Crossref]

J. T. Oh, Y. T. Moon, J. H. Jang, J. H. Eum, Y. J. Sung, S. Y. Lee, J. O. Song, and T. Y. Seong, “High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer,” J. Alloys Compd. 732, 630–636 (2018).
[Crossref]

W. Wang, Y. Lin, Y. Li, X. Li, L. Huang, Y. Zheng, Z. Lin, H. Wang, and G. Li, “High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(7), 1642–1650 (2018).
[Crossref]

2017 (8)

Z. Chen, J. Zhang, S. Xu, J. Xue, J. Zhu, T. Jiang, and Y. Hao, “Effect of AlN interlayer on the impurity incorporation of GaN film grown on sputtered AlN,” J. Alloys Compd. 710, 756–761 (2017).
[Crossref]

R. Liang, J. Zhang, S. Wang, Q. Chen, L. Xu, J. Dai, and C. Chen, “Investigation on thermal characterization of eutectic flip-chip UV-LEDs with different bonding voidage,” IEEE Trans. Electron Dev. 64(3), 1174–1179 (2017).
[Crossref]

I. H. Lee, A. Y. Polyakov, S. M. Hwang, N. M. Shmidt, E. I. Shabunina, N. A. Tal’nishnih, N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin, and S. J. Pearton, “Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs,” Appl. Phys. Lett. 111(6), 062103 (2017).
[Crossref]

M. P. Lin, C. J. Chen, L. W. Shan, and M. C. Wu, “Fabrication and characterization of 395 nm ultraviolet GaN light-emitting diodes,” Solid-State Electron. 135, 49–52 (2017).
[Crossref]

X. Feng, K. Wang, Y. Cheng, Y. Wei, and T. Yu, “High-performance near-UV LED grown by carbon nanotube assisted nanoheteroepitaxy,” Superlattices Microstruct. 109, 41–46 (2017).
[Crossref]

Z. Lin, H. Wang, Y. Lin, W. Wang, and G. Li, “Stress management on underlying GaN-based epitaxial films: A new vision for achieving high-performance LEDs on Si substrates,” J. Appl. Phys. 122(20), 204503 (2017).
[Crossref]

S. H. Lee, X. Y. Guan, and J. S. Yu, “Optical, spectral, and thermal analyses of InGaN/GaN near-ultraviolet flip-chip light-emitting diodes with different package structures,” Phys. Status Solidi., A Appl. Mater. Sci. 214(5), 1600741 (2017).
[Crossref]

C. H. Tien, S. H. Chuang, H. M. Lo, S. Tasi, C. L. Wu, S. L. Ou, and D. S. Wuu, “ITO/nano-Ag plasmonic window applied for efficiency improvement of near-ultraviolet light emitting diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 214(3), 1600609 (2017).
[Crossref]

2016 (1)

Y. Lin, M. Yang, W. Wang, Z. Lin, F. Gao, and G. Li, “High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer,” CrystEngComm 18(14), 2446–2454 (2016).
[Crossref]

2015 (5)

X. H. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. M. Satter, S.-C. Shen, P. Douglas Yoder, T. Detchprohm, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76–80 (2015).
[Crossref]

X. Zhang, F. J. Xu, J. M. Wang, C. G. He, L. S. Zhang, J. Huang, J. P. Cheng, Z. X. Qin, X. L. Yang, N. Tang, X. Q. Wang, and B. Shen, “Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low-and high-temperature alternation technique,” CrystEngComm 17(39), 7496–7499 (2015).
[Crossref]

G. Li, W. Wang, W. Yang, and H. Wang, “Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices,” Surf. Sci. Rep. 70(3), 380–423 (2015).
[Crossref]

H. M. Chang, W. C. Lai, W. S. Chen, and S. J. Chang, “GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells,” Opt. Express 23(7), A337–A345 (2015).
[Crossref] [PubMed]

Y. Lin, S. Zhou, W. Wang, W. Yang, H. Qian, H. Wang, Z. Lin, Z. Liu, Y. Zhu, and G. Li, “Performance improvement of GaN-based light-emitting diodes grown on Si (111) substrates by controlling the reactor pressure for the GaN nucleation layer growth,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(7), 1484–1490 (2015).
[Crossref]

2014 (2)

Z. Quan, L. Wang, C. Zheng, J. Liu, and F. Jiang, “Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes,” J. Appl. Phys. 116(18), 183107 (2014).
[Crossref]

B. Leung, J. Han, and Q. Sun, “Strain relaxation and dislocation reduction in AlGaN step-graded buffer for crack-free GaN on Si(111),” Phys. Status Solidi., C Curr. Top. Solid State Phys. 11(3–4), 437–441 (2014).
[Crossref]

2013 (3)

W. Wang, H. Yang, and G. Li, “Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 1(26), 4070–4077 (2013).
[Crossref]

S.-H. Han, D.-Y. Lee, H.-W. Shim, J. W. Lee, D.-J. Kim, S. Yoon, Y. S. Kim, and S.-T. Kim, “Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 102(25), 251123 (2013).
[Crossref]

D. Zhu, D. J. Wallis, and C. J. Humphreys, “Prospects of III-nitride optoelectronics grown on Si,” Rep. Prog. Phys. 76(10), 106501 (2013).
[Crossref] [PubMed]

2012 (1)

S. F. Yu, R. M. Lin, S. J. Chang, and F. C. Chu, “Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes,” Appl. Phys. Express 5(2), 022102 (2012).
[Crossref]

2009 (3)

V. Jindal and F. Shahedipour-Sandvik, “Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN,” J. Appl. Phys. 105(8), 084902 (2009).
[Crossref]

C. F. Johnston, M. J. Kappers, and C. J. Humphreys, “Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method,” J. Appl. Phys. 105(7), 073102 (2009).
[Crossref]

Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities,” Appl. Phys. Lett. 94(11), 111109 (2009).
[Crossref]

2008 (1)

Z. Chen, S. Newman, D. Brown, R. Chung, S. Keller, U. K. Mishra, S. P. Denbaars, and S. Nakamura, “High quality AlN grown on SiC by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93(19), 191906 (2008).
[Crossref]

2007 (2)

A. Sarua, H. Ji, K. P. Hilton, D. J. Wallis, M. J. Uren, T. Martin, and M. Kuball, “Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices,” IEEE Trans. Electron Dev. 54(12), 3152–3158 (2007).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

2006 (2)

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
[Crossref]

X. A. Cao, S. F. LeBoeuf, and T. E. Stecher, “Temperature-dependent electroluminescence of AlGaN-based UV LEDs,” IEEE Electron Device Lett. 27(5), 329–331 (2006).
[Crossref]

2005 (1)

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mat. Sci. Eng. B 122(3), 184–187 (2005).
[Crossref]

2004 (1)

S. Raghavan and J. M. Redwing, “In situ stress measurements during the MOCVD growth of AlN buffer layers on (1 1 1) Si substrates,” J. Cryst. Growth 261(2-3), 294–300 (2004).
[Crossref]

2003 (1)

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674–676 (2003).
[Crossref]

Banas, M. A.

Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities,” Appl. Phys. Lett. 94(11), 111109 (2009).
[Crossref]

Brown, D.

Z. Chen, S. Newman, D. Brown, R. Chung, S. Keller, U. K. Mishra, S. P. Denbaars, and S. Nakamura, “High quality AlN grown on SiC by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93(19), 191906 (2008).
[Crossref]

Cantu, P.

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674–676 (2003).
[Crossref]

Cao, X. A.

X. A. Cao, S. F. LeBoeuf, and T. E. Stecher, “Temperature-dependent electroluminescence of AlGaN-based UV LEDs,” IEEE Electron Device Lett. 27(5), 329–331 (2006).
[Crossref]

Chang, H. M.

Chang, S. J.

H. M. Chang, W. C. Lai, W. S. Chen, and S. J. Chang, “GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells,” Opt. Express 23(7), A337–A345 (2015).
[Crossref] [PubMed]

S. F. Yu, R. M. Lin, S. J. Chang, and F. C. Chu, “Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes,” Appl. Phys. Express 5(2), 022102 (2012).
[Crossref]

Chen, C.

J. Xu, W. Zhang, M. Peng, J. Dai, and C. Chen, “Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode,” Opt. Lett. 43(11), 2684–2687 (2018).
[Crossref] [PubMed]

R. Liang, J. Zhang, S. Wang, Q. Chen, L. Xu, J. Dai, and C. Chen, “Investigation on thermal characterization of eutectic flip-chip UV-LEDs with different bonding voidage,” IEEE Trans. Electron Dev. 64(3), 1174–1179 (2017).
[Crossref]

Chen, C. J.

M. P. Lin, C. J. Chen, L. W. Shan, and M. C. Wu, “Fabrication and characterization of 395 nm ultraviolet GaN light-emitting diodes,” Solid-State Electron. 135, 49–52 (2017).
[Crossref]

Chen, Q.

R. Liang, J. Zhang, S. Wang, Q. Chen, L. Xu, J. Dai, and C. Chen, “Investigation on thermal characterization of eutectic flip-chip UV-LEDs with different bonding voidage,” IEEE Trans. Electron Dev. 64(3), 1174–1179 (2017).
[Crossref]

Chen, W. S.

Chen, Z.

Z. Chen, J. Zhang, S. Xu, J. Xue, J. Zhu, T. Jiang, and Y. Hao, “Effect of AlN interlayer on the impurity incorporation of GaN film grown on sputtered AlN,” J. Alloys Compd. 710, 756–761 (2017).
[Crossref]

Z. Chen, S. Newman, D. Brown, R. Chung, S. Keller, U. K. Mishra, S. P. Denbaars, and S. Nakamura, “High quality AlN grown on SiC by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93(19), 191906 (2008).
[Crossref]

Cheng, J. P.

X. Zhang, F. J. Xu, J. M. Wang, C. G. He, L. S. Zhang, J. Huang, J. P. Cheng, Z. X. Qin, X. L. Yang, N. Tang, X. Q. Wang, and B. Shen, “Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low-and high-temperature alternation technique,” CrystEngComm 17(39), 7496–7499 (2015).
[Crossref]

Cheng, Y.

X. Feng, K. Wang, Y. Cheng, Y. Wei, and T. Yu, “High-performance near-UV LED grown by carbon nanotube assisted nanoheteroepitaxy,” Superlattices Microstruct. 109, 41–46 (2017).
[Crossref]

Cho, M. W.

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
[Crossref]

Cho, S. R.

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
[Crossref]

Choi, J. H.

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
[Crossref]

Choi, J. W.

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
[Crossref]

Chu, F. C.

S. F. Yu, R. M. Lin, S. J. Chang, and F. C. Chu, “Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes,” Appl. Phys. Express 5(2), 022102 (2012).
[Crossref]

Chu, Y. T.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mat. Sci. Eng. B 122(3), 184–187 (2005).
[Crossref]

Chua, S. J.

A. Kadir, S. Srivastava, Z. Li, K. E. K. Lee, W. A. Sasangka, S. Gradecak, S. J. Chua, and E. A. Fitzgerald, “Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate,” Thin Solid Films 663(1), 73–78 (2018).
[Crossref]

Chuang, S. H.

C. H. Tien, S. H. Chuang, H. M. Lo, S. Tasi, C. L. Wu, S. L. Ou, and D. S. Wuu, “ITO/nano-Ag plasmonic window applied for efficiency improvement of near-ultraviolet light emitting diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 214(3), 1600609 (2017).
[Crossref]

Chung, R.

Z. Chen, S. Newman, D. Brown, R. Chung, S. Keller, U. K. Mishra, S. P. Denbaars, and S. Nakamura, “High quality AlN grown on SiC by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93(19), 191906 (2008).
[Crossref]

Crawford, M. H.

Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities,” Appl. Phys. Lett. 94(11), 111109 (2009).
[Crossref]

Dai, J.

J. Xu, W. Zhang, M. Peng, J. Dai, and C. Chen, “Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode,” Opt. Lett. 43(11), 2684–2687 (2018).
[Crossref] [PubMed]

R. Liang, J. Zhang, S. Wang, Q. Chen, L. Xu, J. Dai, and C. Chen, “Investigation on thermal characterization of eutectic flip-chip UV-LEDs with different bonding voidage,” IEEE Trans. Electron Dev. 64(3), 1174–1179 (2017).
[Crossref]

Dai, Q.

Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities,” Appl. Phys. Lett. 94(11), 111109 (2009).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Denbaars, S. P.

Z. Chen, S. Newman, D. Brown, R. Chung, S. Keller, U. K. Mishra, S. P. Denbaars, and S. Nakamura, “High quality AlN grown on SiC by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93(19), 191906 (2008).
[Crossref]

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674–676 (2003).
[Crossref]

Detchprohm, T.

X. H. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. M. Satter, S.-C. Shen, P. Douglas Yoder, T. Detchprohm, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76–80 (2015).
[Crossref]

Douglas Yoder, P.

X. H. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. M. Satter, S.-C. Shen, P. Douglas Yoder, T. Detchprohm, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76–80 (2015).
[Crossref]

Dupuis, R. D.

X. H. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. M. Satter, S.-C. Shen, P. Douglas Yoder, T. Detchprohm, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76–80 (2015).
[Crossref]

Eum, J. H.

J. T. Oh, Y. T. Moon, J. H. Jang, J. H. Eum, Y. J. Sung, S. Y. Lee, J. O. Song, and T. Y. Seong, “High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer,” J. Alloys Compd. 732, 630–636 (2018).
[Crossref]

Feng, X.

X. Feng, K. Wang, Y. Cheng, Y. Wei, and T. Yu, “High-performance near-UV LED grown by carbon nanotube assisted nanoheteroepitaxy,” Superlattices Microstruct. 109, 41–46 (2017).
[Crossref]

Fischer, A. J.

Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities,” Appl. Phys. Lett. 94(11), 111109 (2009).
[Crossref]

Fischer, A. M.

X. H. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. M. Satter, S.-C. Shen, P. Douglas Yoder, T. Detchprohm, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76–80 (2015).
[Crossref]

Fitzgerald, E. A.

A. Kadir, S. Srivastava, Z. Li, K. E. K. Lee, W. A. Sasangka, S. Gradecak, S. J. Chua, and E. A. Fitzgerald, “Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate,” Thin Solid Films 663(1), 73–78 (2018).
[Crossref]

Gao, F.

Y. Lin, M. Yang, W. Wang, Z. Lin, F. Gao, and G. Li, “High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer,” CrystEngComm 18(14), 2446–2454 (2016).
[Crossref]

Goto, H.

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
[Crossref]

Gradecak, S.

A. Kadir, S. Srivastava, Z. Li, K. E. K. Lee, W. A. Sasangka, S. Gradecak, S. J. Chua, and E. A. Fitzgerald, “Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate,” Thin Solid Films 663(1), 73–78 (2018).
[Crossref]

Guan, X. Y.

S. H. Lee, X. Y. Guan, and J. S. Yu, “Optical, spectral, and thermal analyses of InGaN/GaN near-ultraviolet flip-chip light-emitting diodes with different package structures,” Phys. Status Solidi., A Appl. Mater. Sci. 214(5), 1600741 (2017).
[Crossref]

Ha, J. S.

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
[Crossref]

Han, J.

B. Leung, J. Han, and Q. Sun, “Strain relaxation and dislocation reduction in AlGaN step-graded buffer for crack-free GaN on Si(111),” Phys. Status Solidi., C Curr. Top. Solid State Phys. 11(3–4), 437–441 (2014).
[Crossref]

Han, J. W.

Han, S.-H.

S.-H. Han, D.-Y. Lee, H.-W. Shim, J. W. Lee, D.-J. Kim, S. Yoon, Y. S. Kim, and S.-T. Kim, “Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 102(25), 251123 (2013).
[Crossref]

Hanada, T.

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
[Crossref]

Hao, Y.

Z. Chen, J. Zhang, S. Xu, J. Xue, J. Zhu, T. Jiang, and Y. Hao, “Effect of AlN interlayer on the impurity incorporation of GaN film grown on sputtered AlN,” J. Alloys Compd. 710, 756–761 (2017).
[Crossref]

He, C. G.

X. Zhang, F. J. Xu, J. M. Wang, C. G. He, L. S. Zhang, J. Huang, J. P. Cheng, Z. X. Qin, X. L. Yang, N. Tang, X. Q. Wang, and B. Shen, “Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low-and high-temperature alternation technique,” CrystEngComm 17(39), 7496–7499 (2015).
[Crossref]

Hilton, K. P.

A. Sarua, H. Ji, K. P. Hilton, D. J. Wallis, M. J. Uren, T. Martin, and M. Kuball, “Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices,” IEEE Trans. Electron Dev. 54(12), 3152–3158 (2007).
[Crossref]

Hong, S. K.

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
[Crossref]

Hsieh, M. H.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mat. Sci. Eng. B 122(3), 184–187 (2005).
[Crossref]

Hsu, T. C.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mat. Sci. Eng. B 122(3), 184–187 (2005).
[Crossref]

Huang, J.

X. Zhang, F. J. Xu, J. M. Wang, C. G. He, L. S. Zhang, J. Huang, J. P. Cheng, Z. X. Qin, X. L. Yang, N. Tang, X. Q. Wang, and B. Shen, “Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low-and high-temperature alternation technique,” CrystEngComm 17(39), 7496–7499 (2015).
[Crossref]

Huang, L.

W. Wang, Y. Lin, Y. Li, X. Li, L. Huang, Y. Zheng, Z. Lin, H. Wang, and G. Li, “High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(7), 1642–1650 (2018).
[Crossref]

Humphreys, C. J.

D. Zhu, D. J. Wallis, and C. J. Humphreys, “Prospects of III-nitride optoelectronics grown on Si,” Rep. Prog. Phys. 76(10), 106501 (2013).
[Crossref] [PubMed]

C. F. Johnston, M. J. Kappers, and C. J. Humphreys, “Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method,” J. Appl. Phys. 105(7), 073102 (2009).
[Crossref]

Hwang, S. M.

I. H. Lee, A. Y. Polyakov, S. M. Hwang, N. M. Shmidt, E. I. Shabunina, N. A. Tal’nishnih, N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin, and S. J. Pearton, “Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs,” Appl. Phys. Lett. 111(6), 062103 (2017).
[Crossref]

Jang, J. H.

J. T. Oh, Y. T. Moon, J. H. Jang, J. H. Eum, Y. J. Sung, S. Y. Lee, J. O. Song, and T. Y. Seong, “High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer,” J. Alloys Compd. 732, 630–636 (2018).
[Crossref]

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
[Crossref]

Jeong, H. H.

Ji, H.

A. Sarua, H. Ji, K. P. Hilton, D. J. Wallis, M. J. Uren, T. Martin, and M. Kuball, “Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices,” IEEE Trans. Electron Dev. 54(12), 3152–3158 (2007).
[Crossref]

Jiang, F.

Z. Quan, L. Wang, C. Zheng, J. Liu, and F. Jiang, “Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes,” J. Appl. Phys. 116(18), 183107 (2014).
[Crossref]

Jiang, T.

Z. Chen, J. Zhang, S. Xu, J. Xue, J. Zhu, T. Jiang, and Y. Hao, “Effect of AlN interlayer on the impurity incorporation of GaN film grown on sputtered AlN,” J. Alloys Compd. 710, 756–761 (2017).
[Crossref]

Jindal, V.

V. Jindal and F. Shahedipour-Sandvik, “Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN,” J. Appl. Phys. 105(8), 084902 (2009).
[Crossref]

Johnston, C. F.

C. F. Johnston, M. J. Kappers, and C. J. Humphreys, “Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method,” J. Appl. Phys. 105(7), 073102 (2009).
[Crossref]

Jou, M. J.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mat. Sci. Eng. B 122(3), 184–187 (2005).
[Crossref]

Jung, M. H.

Kadir, A.

A. Kadir, S. Srivastava, Z. Li, K. E. K. Lee, W. A. Sasangka, S. Gradecak, S. J. Chua, and E. A. Fitzgerald, “Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate,” Thin Solid Films 663(1), 73–78 (2018).
[Crossref]

Kang, D. S.

Kao, T. T.

X. H. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. M. Satter, S.-C. Shen, P. Douglas Yoder, T. Detchprohm, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76–80 (2015).
[Crossref]

Kappers, M. J.

C. F. Johnston, M. J. Kappers, and C. J. Humphreys, “Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method,” J. Appl. Phys. 105(7), 073102 (2009).
[Crossref]

Keller, S.

Z. Chen, S. Newman, D. Brown, R. Chung, S. Keller, U. K. Mishra, S. P. Denbaars, and S. Nakamura, “High quality AlN grown on SiC by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93(19), 191906 (2008).
[Crossref]

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674–676 (2003).
[Crossref]

Kim, D.-J.

S.-H. Han, D.-Y. Lee, H.-W. Shim, J. W. Lee, D.-J. Kim, S. Yoon, Y. S. Kim, and S.-T. Kim, “Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 102(25), 251123 (2013).
[Crossref]

Kim, J. K.

Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities,” Appl. Phys. Lett. 94(11), 111109 (2009).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Kim, M. H.

Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities,” Appl. Phys. Lett. 94(11), 111109 (2009).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Kim, S.-T.

S.-H. Han, D.-Y. Lee, H.-W. Shim, J. W. Lee, D.-J. Kim, S. Yoon, Y. S. Kim, and S.-T. Kim, “Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 102(25), 251123 (2013).
[Crossref]

Kim, Y. S.

S.-H. Han, D.-Y. Lee, H.-W. Shim, J. W. Lee, D.-J. Kim, S. Yoon, Y. S. Kim, and S.-T. Kim, “Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 102(25), 251123 (2013).
[Crossref]

Koleske, D. D.

Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities,” Appl. Phys. Lett. 94(11), 111109 (2009).
[Crossref]

Kuball, M.

A. Sarua, H. Ji, K. P. Hilton, D. J. Wallis, M. J. Uren, T. Martin, and M. Kuball, “Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices,” IEEE Trans. Electron Dev. 54(12), 3152–3158 (2007).
[Crossref]

Kuo, H. C.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mat. Sci. Eng. B 122(3), 184–187 (2005).
[Crossref]

Lai, W. C.

LeBoeuf, S. F.

X. A. Cao, S. F. LeBoeuf, and T. E. Stecher, “Temperature-dependent electroluminescence of AlGaN-based UV LEDs,” IEEE Electron Device Lett. 27(5), 329–331 (2006).
[Crossref]

Lee, B. J.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mat. Sci. Eng. B 122(3), 184–187 (2005).
[Crossref]

Lee, D.-Y.

S.-H. Han, D.-Y. Lee, H.-W. Shim, J. W. Lee, D.-J. Kim, S. Yoon, Y. S. Kim, and S.-T. Kim, “Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 102(25), 251123 (2013).
[Crossref]

Lee, H. J.

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
[Crossref]

Lee, H. Y.

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
[Crossref]

Lee, I. H.

I. H. Lee, A. Y. Polyakov, S. M. Hwang, N. M. Shmidt, E. I. Shabunina, N. A. Tal’nishnih, N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin, and S. J. Pearton, “Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs,” Appl. Phys. Lett. 111(6), 062103 (2017).
[Crossref]

Lee, J. S.

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
[Crossref]

Lee, J. W.

S.-H. Han, D.-Y. Lee, H.-W. Shim, J. W. Lee, D.-J. Kim, S. Yoon, Y. S. Kim, and S.-T. Kim, “Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 102(25), 251123 (2013).
[Crossref]

Lee, K. E. K.

A. Kadir, S. Srivastava, Z. Li, K. E. K. Lee, W. A. Sasangka, S. Gradecak, S. J. Chua, and E. A. Fitzgerald, “Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate,” Thin Solid Films 663(1), 73–78 (2018).
[Crossref]

Lee, S. H.

S. H. Lee, X. Y. Guan, and J. S. Yu, “Optical, spectral, and thermal analyses of InGaN/GaN near-ultraviolet flip-chip light-emitting diodes with different package structures,” Phys. Status Solidi., A Appl. Mater. Sci. 214(5), 1600741 (2017).
[Crossref]

Lee, S. R.

Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities,” Appl. Phys. Lett. 94(11), 111109 (2009).
[Crossref]

Lee, S. W.

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
[Crossref]

Lee, S. Y.

J. T. Oh, Y. T. Moon, J. H. Jang, J. H. Eum, Y. J. Sung, S. Y. Lee, J. O. Song, and T. Y. Seong, “High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer,” J. Alloys Compd. 732, 630–636 (2018).
[Crossref]

Lee, Y. J.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mat. Sci. Eng. B 122(3), 184–187 (2005).
[Crossref]

Leung, B.

B. Leung, J. Han, and Q. Sun, “Strain relaxation and dislocation reduction in AlGaN step-graded buffer for crack-free GaN on Si(111),” Phys. Status Solidi., C Curr. Top. Solid State Phys. 11(3–4), 437–441 (2014).
[Crossref]

Li, G.

W. Wang, Y. Lin, Y. Li, X. Li, L. Huang, Y. Zheng, Z. Lin, H. Wang, and G. Li, “High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(7), 1642–1650 (2018).
[Crossref]

Z. Lin, H. Wang, Y. Lin, W. Wang, and G. Li, “Stress management on underlying GaN-based epitaxial films: A new vision for achieving high-performance LEDs on Si substrates,” J. Appl. Phys. 122(20), 204503 (2017).
[Crossref]

Y. Lin, M. Yang, W. Wang, Z. Lin, F. Gao, and G. Li, “High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer,” CrystEngComm 18(14), 2446–2454 (2016).
[Crossref]

G. Li, W. Wang, W. Yang, and H. Wang, “Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices,” Surf. Sci. Rep. 70(3), 380–423 (2015).
[Crossref]

Y. Lin, S. Zhou, W. Wang, W. Yang, H. Qian, H. Wang, Z. Lin, Z. Liu, Y. Zhu, and G. Li, “Performance improvement of GaN-based light-emitting diodes grown on Si (111) substrates by controlling the reactor pressure for the GaN nucleation layer growth,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(7), 1484–1490 (2015).
[Crossref]

W. Wang, H. Yang, and G. Li, “Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 1(26), 4070–4077 (2013).
[Crossref]

Li, X.

W. Wang, Y. Lin, Y. Li, X. Li, L. Huang, Y. Zheng, Z. Lin, H. Wang, and G. Li, “High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(7), 1642–1650 (2018).
[Crossref]

Li, X. H.

X. H. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. M. Satter, S.-C. Shen, P. Douglas Yoder, T. Detchprohm, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76–80 (2015).
[Crossref]

Li, Y.

W. Wang, Y. Lin, Y. Li, X. Li, L. Huang, Y. Zheng, Z. Lin, H. Wang, and G. Li, “High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(7), 1642–1650 (2018).
[Crossref]

Li, Z.

A. Kadir, S. Srivastava, Z. Li, K. E. K. Lee, W. A. Sasangka, S. Gradecak, S. J. Chua, and E. A. Fitzgerald, “Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate,” Thin Solid Films 663(1), 73–78 (2018).
[Crossref]

Liang, R.

R. Liang, J. Zhang, S. Wang, Q. Chen, L. Xu, J. Dai, and C. Chen, “Investigation on thermal characterization of eutectic flip-chip UV-LEDs with different bonding voidage,” IEEE Trans. Electron Dev. 64(3), 1174–1179 (2017).
[Crossref]

Lin, M. P.

M. P. Lin, C. J. Chen, L. W. Shan, and M. C. Wu, “Fabrication and characterization of 395 nm ultraviolet GaN light-emitting diodes,” Solid-State Electron. 135, 49–52 (2017).
[Crossref]

Lin, R. M.

S. F. Yu, R. M. Lin, S. J. Chang, and F. C. Chu, “Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes,” Appl. Phys. Express 5(2), 022102 (2012).
[Crossref]

Lin, Y.

W. Wang, Y. Lin, Y. Li, X. Li, L. Huang, Y. Zheng, Z. Lin, H. Wang, and G. Li, “High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(7), 1642–1650 (2018).
[Crossref]

Z. Lin, H. Wang, Y. Lin, W. Wang, and G. Li, “Stress management on underlying GaN-based epitaxial films: A new vision for achieving high-performance LEDs on Si substrates,” J. Appl. Phys. 122(20), 204503 (2017).
[Crossref]

Y. Lin, M. Yang, W. Wang, Z. Lin, F. Gao, and G. Li, “High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer,” CrystEngComm 18(14), 2446–2454 (2016).
[Crossref]

Y. Lin, S. Zhou, W. Wang, W. Yang, H. Qian, H. Wang, Z. Lin, Z. Liu, Y. Zhu, and G. Li, “Performance improvement of GaN-based light-emitting diodes grown on Si (111) substrates by controlling the reactor pressure for the GaN nucleation layer growth,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(7), 1484–1490 (2015).
[Crossref]

Lin, Z.

W. Wang, Y. Lin, Y. Li, X. Li, L. Huang, Y. Zheng, Z. Lin, H. Wang, and G. Li, “High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(7), 1642–1650 (2018).
[Crossref]

Z. Lin, H. Wang, Y. Lin, W. Wang, and G. Li, “Stress management on underlying GaN-based epitaxial films: A new vision for achieving high-performance LEDs on Si substrates,” J. Appl. Phys. 122(20), 204503 (2017).
[Crossref]

Y. Lin, M. Yang, W. Wang, Z. Lin, F. Gao, and G. Li, “High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer,” CrystEngComm 18(14), 2446–2454 (2016).
[Crossref]

Y. Lin, S. Zhou, W. Wang, W. Yang, H. Qian, H. Wang, Z. Lin, Z. Liu, Y. Zhu, and G. Li, “Performance improvement of GaN-based light-emitting diodes grown on Si (111) substrates by controlling the reactor pressure for the GaN nucleation layer growth,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(7), 1484–1490 (2015).
[Crossref]

Liu, J.

Z. Quan, L. Wang, C. Zheng, J. Liu, and F. Jiang, “Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes,” J. Appl. Phys. 116(18), 183107 (2014).
[Crossref]

Liu, Z.

Y. Lin, S. Zhou, W. Wang, W. Yang, H. Qian, H. Wang, Z. Lin, Z. Liu, Y. Zhu, and G. Li, “Performance improvement of GaN-based light-emitting diodes grown on Si (111) substrates by controlling the reactor pressure for the GaN nucleation layer growth,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(7), 1484–1490 (2015).
[Crossref]

Lo, H. M.

C. H. Tien, S. H. Chuang, H. M. Lo, S. Tasi, C. L. Wu, S. L. Ou, and D. S. Wuu, “ITO/nano-Ag plasmonic window applied for efficiency improvement of near-ultraviolet light emitting diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 214(3), 1600609 (2017).
[Crossref]

Martin, T.

A. Sarua, H. Ji, K. P. Hilton, D. J. Wallis, M. J. Uren, T. Martin, and M. Kuball, “Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices,” IEEE Trans. Electron Dev. 54(12), 3152–3158 (2007).
[Crossref]

Mishra, U. K.

Z. Chen, S. Newman, D. Brown, R. Chung, S. Keller, U. K. Mishra, S. P. Denbaars, and S. Nakamura, “High quality AlN grown on SiC by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93(19), 191906 (2008).
[Crossref]

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674–676 (2003).
[Crossref]

Moon, Y. T.

J. T. Oh, Y. T. Moon, J. H. Jang, J. H. Eum, Y. J. Sung, S. Y. Lee, J. O. Song, and T. Y. Seong, “High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer,” J. Alloys Compd. 732, 630–636 (2018).
[Crossref]

J. T. Oh, Y. T. Moon, D. S. Kang, C. K. Park, J. W. Han, M. H. Jung, Y. J. Sung, H. H. Jeong, J. O. Song, and T. Y. Seong, “High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer,” Opt. Express 26(5), 5111–5117 (2018).
[Crossref] [PubMed]

Nakamura, S.

Z. Chen, S. Newman, D. Brown, R. Chung, S. Keller, U. K. Mishra, S. P. Denbaars, and S. Nakamura, “High quality AlN grown on SiC by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93(19), 191906 (2008).
[Crossref]

Newman, S.

Z. Chen, S. Newman, D. Brown, R. Chung, S. Keller, U. K. Mishra, S. P. Denbaars, and S. Nakamura, “High quality AlN grown on SiC by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93(19), 191906 (2008).
[Crossref]

Oh, D. C.

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
[Crossref]

Oh, J. T.

J. T. Oh, Y. T. Moon, J. H. Jang, J. H. Eum, Y. J. Sung, S. Y. Lee, J. O. Song, and T. Y. Seong, “High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer,” J. Alloys Compd. 732, 630–636 (2018).
[Crossref]

J. T. Oh, Y. T. Moon, D. S. Kang, C. K. Park, J. W. Han, M. H. Jung, Y. J. Sung, H. H. Jeong, J. O. Song, and T. Y. Seong, “High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer,” Opt. Express 26(5), 5111–5117 (2018).
[Crossref] [PubMed]

Ou, S. L.

C. H. Tien, S. H. Chuang, H. M. Lo, S. Tasi, C. L. Wu, S. L. Ou, and D. S. Wuu, “ITO/nano-Ag plasmonic window applied for efficiency improvement of near-ultraviolet light emitting diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 214(3), 1600609 (2017).
[Crossref]

Park, C. K.

Park, Y.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Pearton, S. J.

I. H. Lee, A. Y. Polyakov, S. M. Hwang, N. M. Shmidt, E. I. Shabunina, N. A. Tal’nishnih, N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin, and S. J. Pearton, “Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs,” Appl. Phys. Lett. 111(6), 062103 (2017).
[Crossref]

Peng, M.

Piprek, J.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Polyakov, A. Y.

I. H. Lee, A. Y. Polyakov, S. M. Hwang, N. M. Shmidt, E. I. Shabunina, N. A. Tal’nishnih, N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin, and S. J. Pearton, “Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs,” Appl. Phys. Lett. 111(6), 062103 (2017).
[Crossref]

Ponce, F. A.

X. H. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. M. Satter, S.-C. Shen, P. Douglas Yoder, T. Detchprohm, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76–80 (2015).
[Crossref]

Qian, H.

Y. Lin, S. Zhou, W. Wang, W. Yang, H. Qian, H. Wang, Z. Lin, Z. Liu, Y. Zhu, and G. Li, “Performance improvement of GaN-based light-emitting diodes grown on Si (111) substrates by controlling the reactor pressure for the GaN nucleation layer growth,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(7), 1484–1490 (2015).
[Crossref]

Qin, Z. X.

X. Zhang, F. J. Xu, J. M. Wang, C. G. He, L. S. Zhang, J. Huang, J. P. Cheng, Z. X. Qin, X. L. Yang, N. Tang, X. Q. Wang, and B. Shen, “Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low-and high-temperature alternation technique,” CrystEngComm 17(39), 7496–7499 (2015).
[Crossref]

Quan, Z.

Z. Quan, L. Wang, C. Zheng, J. Liu, and F. Jiang, “Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes,” J. Appl. Phys. 116(18), 183107 (2014).
[Crossref]

Raghavan, S.

S. Raghavan and J. M. Redwing, “In situ stress measurements during the MOCVD growth of AlN buffer layers on (1 1 1) Si substrates,” J. Cryst. Growth 261(2-3), 294–300 (2004).
[Crossref]

Redwing, J. M.

S. Raghavan and J. M. Redwing, “In situ stress measurements during the MOCVD growth of AlN buffer layers on (1 1 1) Si substrates,” J. Cryst. Growth 261(2-3), 294–300 (2004).
[Crossref]

Romanov, A. E.

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674–676 (2003).
[Crossref]

Sarua, A.

A. Sarua, H. Ji, K. P. Hilton, D. J. Wallis, M. J. Uren, T. Martin, and M. Kuball, “Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices,” IEEE Trans. Electron Dev. 54(12), 3152–3158 (2007).
[Crossref]

Sasangka, W. A.

A. Kadir, S. Srivastava, Z. Li, K. E. K. Lee, W. A. Sasangka, S. Gradecak, S. J. Chua, and E. A. Fitzgerald, “Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate,” Thin Solid Films 663(1), 73–78 (2018).
[Crossref]

Satter, M. M.

X. H. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. M. Satter, S.-C. Shen, P. Douglas Yoder, T. Detchprohm, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76–80 (2015).
[Crossref]

Schubert, E. F.

Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities,” Appl. Phys. Lett. 94(11), 111109 (2009).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Schubert, M. F.

Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities,” Appl. Phys. Lett. 94(11), 111109 (2009).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Seong, T. Y.

J. T. Oh, Y. T. Moon, J. H. Jang, J. H. Eum, Y. J. Sung, S. Y. Lee, J. O. Song, and T. Y. Seong, “High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer,” J. Alloys Compd. 732, 630–636 (2018).
[Crossref]

J. T. Oh, Y. T. Moon, D. S. Kang, C. K. Park, J. W. Han, M. H. Jung, Y. J. Sung, H. H. Jeong, J. O. Song, and T. Y. Seong, “High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer,” Opt. Express 26(5), 5111–5117 (2018).
[Crossref] [PubMed]

Shabunina, E. I.

I. H. Lee, A. Y. Polyakov, S. M. Hwang, N. M. Shmidt, E. I. Shabunina, N. A. Tal’nishnih, N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin, and S. J. Pearton, “Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs,” Appl. Phys. Lett. 111(6), 062103 (2017).
[Crossref]

Shahedipour-Sandvik, F.

V. Jindal and F. Shahedipour-Sandvik, “Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN,” J. Appl. Phys. 105(8), 084902 (2009).
[Crossref]

Shan, L. W.

M. P. Lin, C. J. Chen, L. W. Shan, and M. C. Wu, “Fabrication and characterization of 395 nm ultraviolet GaN light-emitting diodes,” Solid-State Electron. 135, 49–52 (2017).
[Crossref]

Shchemerov, I. V.

I. H. Lee, A. Y. Polyakov, S. M. Hwang, N. M. Shmidt, E. I. Shabunina, N. A. Tal’nishnih, N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin, and S. J. Pearton, “Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs,” Appl. Phys. Lett. 111(6), 062103 (2017).
[Crossref]

Shen, B.

X. Zhang, F. J. Xu, J. M. Wang, C. G. He, L. S. Zhang, J. Huang, J. P. Cheng, Z. X. Qin, X. L. Yang, N. Tang, X. Q. Wang, and B. Shen, “Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low-and high-temperature alternation technique,” CrystEngComm 17(39), 7496–7499 (2015).
[Crossref]

Shen, S.-C.

X. H. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. M. Satter, S.-C. Shen, P. Douglas Yoder, T. Detchprohm, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76–80 (2015).
[Crossref]

Shen, Y. J.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mat. Sci. Eng. B 122(3), 184–187 (2005).
[Crossref]

Shim, H.-W.

S.-H. Han, D.-Y. Lee, H.-W. Shim, J. W. Lee, D.-J. Kim, S. Yoon, Y. S. Kim, and S.-T. Kim, “Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 102(25), 251123 (2013).
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S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
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I. H. Lee, A. Y. Polyakov, S. M. Hwang, N. M. Shmidt, E. I. Shabunina, N. A. Tal’nishnih, N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin, and S. J. Pearton, “Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs,” Appl. Phys. Lett. 111(6), 062103 (2017).
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Smirnov, N. B.

I. H. Lee, A. Y. Polyakov, S. M. Hwang, N. M. Shmidt, E. I. Shabunina, N. A. Tal’nishnih, N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin, and S. J. Pearton, “Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs,” Appl. Phys. Lett. 111(6), 062103 (2017).
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J. T. Oh, Y. T. Moon, J. H. Jang, J. H. Eum, Y. J. Sung, S. Y. Lee, J. O. Song, and T. Y. Seong, “High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer,” J. Alloys Compd. 732, 630–636 (2018).
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J. T. Oh, Y. T. Moon, D. S. Kang, C. K. Park, J. W. Han, M. H. Jung, Y. J. Sung, H. H. Jeong, J. O. Song, and T. Y. Seong, “High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer,” Opt. Express 26(5), 5111–5117 (2018).
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Speck, J. S.

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674–676 (2003).
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Srivastava, S.

A. Kadir, S. Srivastava, Z. Li, K. E. K. Lee, W. A. Sasangka, S. Gradecak, S. J. Chua, and E. A. Fitzgerald, “Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate,” Thin Solid Films 663(1), 73–78 (2018).
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X. A. Cao, S. F. LeBoeuf, and T. E. Stecher, “Temperature-dependent electroluminescence of AlGaN-based UV LEDs,” IEEE Electron Device Lett. 27(5), 329–331 (2006).
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B. Leung, J. Han, and Q. Sun, “Strain relaxation and dislocation reduction in AlGaN step-graded buffer for crack-free GaN on Si(111),” Phys. Status Solidi., C Curr. Top. Solid State Phys. 11(3–4), 437–441 (2014).
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J. T. Oh, Y. T. Moon, J. H. Jang, J. H. Eum, Y. J. Sung, S. Y. Lee, J. O. Song, and T. Y. Seong, “High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer,” J. Alloys Compd. 732, 630–636 (2018).
[Crossref]

J. T. Oh, Y. T. Moon, D. S. Kang, C. K. Park, J. W. Han, M. H. Jung, Y. J. Sung, H. H. Jeong, J. O. Song, and T. Y. Seong, “High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer,” Opt. Express 26(5), 5111–5117 (2018).
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Tal’nishnih, N. A.

I. H. Lee, A. Y. Polyakov, S. M. Hwang, N. M. Shmidt, E. I. Shabunina, N. A. Tal’nishnih, N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin, and S. J. Pearton, “Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs,” Appl. Phys. Lett. 111(6), 062103 (2017).
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Tang, N.

X. Zhang, F. J. Xu, J. M. Wang, C. G. He, L. S. Zhang, J. Huang, J. P. Cheng, Z. X. Qin, X. L. Yang, N. Tang, X. Q. Wang, and B. Shen, “Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low-and high-temperature alternation technique,” CrystEngComm 17(39), 7496–7499 (2015).
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Tarelkin, S. A.

I. H. Lee, A. Y. Polyakov, S. M. Hwang, N. M. Shmidt, E. I. Shabunina, N. A. Tal’nishnih, N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin, and S. J. Pearton, “Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs,” Appl. Phys. Lett. 111(6), 062103 (2017).
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Tasi, S.

C. H. Tien, S. H. Chuang, H. M. Lo, S. Tasi, C. L. Wu, S. L. Ou, and D. S. Wuu, “ITO/nano-Ag plasmonic window applied for efficiency improvement of near-ultraviolet light emitting diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 214(3), 1600609 (2017).
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Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities,” Appl. Phys. Lett. 94(11), 111109 (2009).
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Tien, C. H.

C. H. Tien, S. H. Chuang, H. M. Lo, S. Tasi, C. L. Wu, S. L. Ou, and D. S. Wuu, “ITO/nano-Ag plasmonic window applied for efficiency improvement of near-ultraviolet light emitting diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 214(3), 1600609 (2017).
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Uren, M. J.

A. Sarua, H. Ji, K. P. Hilton, D. J. Wallis, M. J. Uren, T. Martin, and M. Kuball, “Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices,” IEEE Trans. Electron Dev. 54(12), 3152–3158 (2007).
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Wallis, D. J.

D. Zhu, D. J. Wallis, and C. J. Humphreys, “Prospects of III-nitride optoelectronics grown on Si,” Rep. Prog. Phys. 76(10), 106501 (2013).
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A. Sarua, H. Ji, K. P. Hilton, D. J. Wallis, M. J. Uren, T. Martin, and M. Kuball, “Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices,” IEEE Trans. Electron Dev. 54(12), 3152–3158 (2007).
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Waltereit, P.

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674–676 (2003).
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Wang, H.

W. Wang, Y. Lin, Y. Li, X. Li, L. Huang, Y. Zheng, Z. Lin, H. Wang, and G. Li, “High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(7), 1642–1650 (2018).
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Z. Lin, H. Wang, Y. Lin, W. Wang, and G. Li, “Stress management on underlying GaN-based epitaxial films: A new vision for achieving high-performance LEDs on Si substrates,” J. Appl. Phys. 122(20), 204503 (2017).
[Crossref]

Y. Lin, S. Zhou, W. Wang, W. Yang, H. Qian, H. Wang, Z. Lin, Z. Liu, Y. Zhu, and G. Li, “Performance improvement of GaN-based light-emitting diodes grown on Si (111) substrates by controlling the reactor pressure for the GaN nucleation layer growth,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(7), 1484–1490 (2015).
[Crossref]

G. Li, W. Wang, W. Yang, and H. Wang, “Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices,” Surf. Sci. Rep. 70(3), 380–423 (2015).
[Crossref]

Wang, J. M.

X. Zhang, F. J. Xu, J. M. Wang, C. G. He, L. S. Zhang, J. Huang, J. P. Cheng, Z. X. Qin, X. L. Yang, N. Tang, X. Q. Wang, and B. Shen, “Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low-and high-temperature alternation technique,” CrystEngComm 17(39), 7496–7499 (2015).
[Crossref]

Wang, K.

X. Feng, K. Wang, Y. Cheng, Y. Wei, and T. Yu, “High-performance near-UV LED grown by carbon nanotube assisted nanoheteroepitaxy,” Superlattices Microstruct. 109, 41–46 (2017).
[Crossref]

Wang, L.

Z. Quan, L. Wang, C. Zheng, J. Liu, and F. Jiang, “Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes,” J. Appl. Phys. 116(18), 183107 (2014).
[Crossref]

Wang, S.

R. Liang, J. Zhang, S. Wang, Q. Chen, L. Xu, J. Dai, and C. Chen, “Investigation on thermal characterization of eutectic flip-chip UV-LEDs with different bonding voidage,” IEEE Trans. Electron Dev. 64(3), 1174–1179 (2017).
[Crossref]

X. H. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. M. Satter, S.-C. Shen, P. Douglas Yoder, T. Detchprohm, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76–80 (2015).
[Crossref]

Wang, S. C.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mat. Sci. Eng. B 122(3), 184–187 (2005).
[Crossref]

Wang, W.

W. Wang, Y. Lin, Y. Li, X. Li, L. Huang, Y. Zheng, Z. Lin, H. Wang, and G. Li, “High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(7), 1642–1650 (2018).
[Crossref]

Z. Lin, H. Wang, Y. Lin, W. Wang, and G. Li, “Stress management on underlying GaN-based epitaxial films: A new vision for achieving high-performance LEDs on Si substrates,” J. Appl. Phys. 122(20), 204503 (2017).
[Crossref]

Y. Lin, M. Yang, W. Wang, Z. Lin, F. Gao, and G. Li, “High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer,” CrystEngComm 18(14), 2446–2454 (2016).
[Crossref]

G. Li, W. Wang, W. Yang, and H. Wang, “Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices,” Surf. Sci. Rep. 70(3), 380–423 (2015).
[Crossref]

Y. Lin, S. Zhou, W. Wang, W. Yang, H. Qian, H. Wang, Z. Lin, Z. Liu, Y. Zhu, and G. Li, “Performance improvement of GaN-based light-emitting diodes grown on Si (111) substrates by controlling the reactor pressure for the GaN nucleation layer growth,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(7), 1484–1490 (2015).
[Crossref]

W. Wang, H. Yang, and G. Li, “Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 1(26), 4070–4077 (2013).
[Crossref]

Wang, X. Q.

X. Zhang, F. J. Xu, J. M. Wang, C. G. He, L. S. Zhang, J. Huang, J. P. Cheng, Z. X. Qin, X. L. Yang, N. Tang, X. Q. Wang, and B. Shen, “Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low-and high-temperature alternation technique,” CrystEngComm 17(39), 7496–7499 (2015).
[Crossref]

Wei, Y.

X. Feng, K. Wang, Y. Cheng, Y. Wei, and T. Yu, “High-performance near-UV LED grown by carbon nanotube assisted nanoheteroepitaxy,” Superlattices Microstruct. 109, 41–46 (2017).
[Crossref]

Wei, Y. O.

X. H. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. M. Satter, S.-C. Shen, P. Douglas Yoder, T. Detchprohm, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76–80 (2015).
[Crossref]

Wu, C. L.

C. H. Tien, S. H. Chuang, H. M. Lo, S. Tasi, C. L. Wu, S. L. Ou, and D. S. Wuu, “ITO/nano-Ag plasmonic window applied for efficiency improvement of near-ultraviolet light emitting diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 214(3), 1600609 (2017).
[Crossref]

Wu, F.

P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck, “Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films,” Appl. Phys. Lett. 83(4), 674–676 (2003).
[Crossref]

Wu, M. C.

M. P. Lin, C. J. Chen, L. W. Shan, and M. C. Wu, “Fabrication and characterization of 395 nm ultraviolet GaN light-emitting diodes,” Solid-State Electron. 135, 49–52 (2017).
[Crossref]

Wuu, D. S.

C. H. Tien, S. H. Chuang, H. M. Lo, S. Tasi, C. L. Wu, S. L. Ou, and D. S. Wuu, “ITO/nano-Ag plasmonic window applied for efficiency improvement of near-ultraviolet light emitting diodes,” Phys. Status Solidi., A Appl. Mater. Sci. 214(3), 1600609 (2017).
[Crossref]

Xie, H.

X. H. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. M. Satter, S.-C. Shen, P. Douglas Yoder, T. Detchprohm, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition,” J. Cryst. Growth 414, 76–80 (2015).
[Crossref]

Xu, F. J.

X. Zhang, F. J. Xu, J. M. Wang, C. G. He, L. S. Zhang, J. Huang, J. P. Cheng, Z. X. Qin, X. L. Yang, N. Tang, X. Q. Wang, and B. Shen, “Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low-and high-temperature alternation technique,” CrystEngComm 17(39), 7496–7499 (2015).
[Crossref]

Xu, J.

Xu, L.

R. Liang, J. Zhang, S. Wang, Q. Chen, L. Xu, J. Dai, and C. Chen, “Investigation on thermal characterization of eutectic flip-chip UV-LEDs with different bonding voidage,” IEEE Trans. Electron Dev. 64(3), 1174–1179 (2017).
[Crossref]

Xu, S.

Z. Chen, J. Zhang, S. Xu, J. Xue, J. Zhu, T. Jiang, and Y. Hao, “Effect of AlN interlayer on the impurity incorporation of GaN film grown on sputtered AlN,” J. Alloys Compd. 710, 756–761 (2017).
[Crossref]

Xue, J.

Z. Chen, J. Zhang, S. Xu, J. Xue, J. Zhu, T. Jiang, and Y. Hao, “Effect of AlN interlayer on the impurity incorporation of GaN film grown on sputtered AlN,” J. Alloys Compd. 710, 756–761 (2017).
[Crossref]

Yang, H.

W. Wang, H. Yang, and G. Li, “Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 1(26), 4070–4077 (2013).
[Crossref]

Yang, M.

Y. Lin, M. Yang, W. Wang, Z. Lin, F. Gao, and G. Li, “High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer,” CrystEngComm 18(14), 2446–2454 (2016).
[Crossref]

Yang, W.

G. Li, W. Wang, W. Yang, and H. Wang, “Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices,” Surf. Sci. Rep. 70(3), 380–423 (2015).
[Crossref]

Y. Lin, S. Zhou, W. Wang, W. Yang, H. Qian, H. Wang, Z. Lin, Z. Liu, Y. Zhu, and G. Li, “Performance improvement of GaN-based light-emitting diodes grown on Si (111) substrates by controlling the reactor pressure for the GaN nucleation layer growth,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(7), 1484–1490 (2015).
[Crossref]

Yang, X. L.

X. Zhang, F. J. Xu, J. M. Wang, C. G. He, L. S. Zhang, J. Huang, J. P. Cheng, Z. X. Qin, X. L. Yang, N. Tang, X. Q. Wang, and B. Shen, “Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low-and high-temperature alternation technique,” CrystEngComm 17(39), 7496–7499 (2015).
[Crossref]

Yang, Y. L.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mat. Sci. Eng. B 122(3), 184–187 (2005).
[Crossref]

Yao, T.

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006).
[Crossref]

Yen, S. N.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mat. Sci. Eng. B 122(3), 184–187 (2005).
[Crossref]

Yoon, S.

S.-H. Han, D.-Y. Lee, H.-W. Shim, J. W. Lee, D.-J. Kim, S. Yoon, Y. S. Kim, and S.-T. Kim, “Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett. 102(25), 251123 (2013).
[Crossref]

Yu, J. S.

S. H. Lee, X. Y. Guan, and J. S. Yu, “Optical, spectral, and thermal analyses of InGaN/GaN near-ultraviolet flip-chip light-emitting diodes with different package structures,” Phys. Status Solidi., A Appl. Mater. Sci. 214(5), 1600741 (2017).
[Crossref]

Yu, S. F.

S. F. Yu, R. M. Lin, S. J. Chang, and F. C. Chu, “Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes,” Appl. Phys. Express 5(2), 022102 (2012).
[Crossref]

Yu, T.

X. Feng, K. Wang, Y. Cheng, Y. Wei, and T. Yu, “High-performance near-UV LED grown by carbon nanotube assisted nanoheteroepitaxy,” Superlattices Microstruct. 109, 41–46 (2017).
[Crossref]

Zhang, J.

R. Liang, J. Zhang, S. Wang, Q. Chen, L. Xu, J. Dai, and C. Chen, “Investigation on thermal characterization of eutectic flip-chip UV-LEDs with different bonding voidage,” IEEE Trans. Electron Dev. 64(3), 1174–1179 (2017).
[Crossref]

Z. Chen, J. Zhang, S. Xu, J. Xue, J. Zhu, T. Jiang, and Y. Hao, “Effect of AlN interlayer on the impurity incorporation of GaN film grown on sputtered AlN,” J. Alloys Compd. 710, 756–761 (2017).
[Crossref]

Zhang, L. S.

X. Zhang, F. J. Xu, J. M. Wang, C. G. He, L. S. Zhang, J. Huang, J. P. Cheng, Z. X. Qin, X. L. Yang, N. Tang, X. Q. Wang, and B. Shen, “Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low-and high-temperature alternation technique,” CrystEngComm 17(39), 7496–7499 (2015).
[Crossref]

Zhang, W.

Zhang, X.

X. Zhang, F. J. Xu, J. M. Wang, C. G. He, L. S. Zhang, J. Huang, J. P. Cheng, Z. X. Qin, X. L. Yang, N. Tang, X. Q. Wang, and B. Shen, “Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low-and high-temperature alternation technique,” CrystEngComm 17(39), 7496–7499 (2015).
[Crossref]

Zheng, C.

Z. Quan, L. Wang, C. Zheng, J. Liu, and F. Jiang, “Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes,” J. Appl. Phys. 116(18), 183107 (2014).
[Crossref]

Zheng, Y.

W. Wang, Y. Lin, Y. Li, X. Li, L. Huang, Y. Zheng, Z. Lin, H. Wang, and G. Li, “High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates,” J. Mater. Chem. C Mater. Opt. Electron. Devices 6(7), 1642–1650 (2018).
[Crossref]

Zhou, S.

Y. Lin, S. Zhou, W. Wang, W. Yang, H. Qian, H. Wang, Z. Lin, Z. Liu, Y. Zhu, and G. Li, “Performance improvement of GaN-based light-emitting diodes grown on Si (111) substrates by controlling the reactor pressure for the GaN nucleation layer growth,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(7), 1484–1490 (2015).
[Crossref]

Zhu, D.

D. Zhu, D. J. Wallis, and C. J. Humphreys, “Prospects of III-nitride optoelectronics grown on Si,” Rep. Prog. Phys. 76(10), 106501 (2013).
[Crossref] [PubMed]

Zhu, J.

Z. Chen, J. Zhang, S. Xu, J. Xue, J. Zhu, T. Jiang, and Y. Hao, “Effect of AlN interlayer on the impurity incorporation of GaN film grown on sputtered AlN,” J. Alloys Compd. 710, 756–761 (2017).
[Crossref]

Zhu, Y.

Y. Lin, S. Zhou, W. Wang, W. Yang, H. Qian, H. Wang, Z. Lin, Z. Liu, Y. Zhu, and G. Li, “Performance improvement of GaN-based light-emitting diodes grown on Si (111) substrates by controlling the reactor pressure for the GaN nucleation layer growth,” J. Mater. Chem. C Mater. Opt. Electron. Devices 3(7), 1484–1490 (2015).
[Crossref]

Zinovyev, R. A.

I. H. Lee, A. Y. Polyakov, S. M. Hwang, N. M. Shmidt, E. I. Shabunina, N. A. Tal’nishnih, N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin, and S. J. Pearton, “Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs,” Appl. Phys. Lett. 111(6), 062103 (2017).
[Crossref]

Appl. Phys. Express (1)

S. F. Yu, R. M. Lin, S. J. Chang, and F. C. Chu, “Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes,” Appl. Phys. Express 5(2), 022102 (2012).
[Crossref]

Appl. Phys. Lett. (7)

I. H. Lee, A. Y. Polyakov, S. M. Hwang, N. M. Shmidt, E. I. Shabunina, N. A. Tal’nishnih, N. B. Smirnov, I. V. Shchemerov, R. A. Zinovyev, S. A. Tarelkin, and S. J. Pearton, “Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs,” Appl. Phys. Lett. 111(6), 062103 (2017).
[Crossref]

Z. Chen, S. Newman, D. Brown, R. Chung, S. Keller, U. K. Mishra, S. P. Denbaars, and S. Nakamura, “High quality AlN grown on SiC by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93(19), 191906 (2008).
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IEEE Electron Device Lett. (1)

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Other (1)

L. G. Innotek, http://led.lginnotek.com/ .

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Figures (6)

Fig. 1
Fig. 1 Schematic structures of (a) AlN buffer layer for sample A, (b) AlN buffer layer for sample B, (c) LED wafers for samples C/D and (d) LED chips for samples C/D.
Fig. 2
Fig. 2 The AFM images of sample A with the thickness of (a) 120, (b) 210, and (c) 320 nm. And the AFM images of sample B with the thickness of (d) 120, (e) 210, and (f) 320 nm.
Fig. 3
Fig. 3 The typical XRCs of (a) AlN (0002) and (b) AlN (10-12) for samples A and B. (c) The dependence of the FWHM values of AlN buffer layer for samples A/B on corresponding LED wafers for samples C/D. The cross-sectional TEM images of LED wafers for (d) sample C and (e) sample D.
Fig. 4
Fig. 4 The optical micrographs of (a) sample C and (b) sample D. (c) The Raman spectra of LED wafers, and (d) the dependence of GaN E2 Raman shift on the structures of AlN buffer layers for samples C and D.
Fig. 5
Fig. 5 (a) HRXRD ω-2θ scan curve for InGaN/GaN MQWs, (b) GaN(10-14) RSM for LED wafer, (c) cross-sectional TEM image of SWs, MQWs and EBL, and (d) high-magnification TEM image of InGaN/GaN MQWs of sample D.
Fig. 6
Fig. 6 (a) EL spectra for sample D LED chips working at different currents from 10 to 750 mA. The inset in (a) is a photograph of the LED chip working at 350 mA. (b) L-I-V curves, (c) WPE-I and EQE-I curves, and (d) I-V curves for samples C and D LED chips.

Tables (1)

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Table 1 The device properties of near-UV LEDs ever reported

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