Abstract

In this study, a ZnO/diamond structure ultraviolet (UV) photodetector was fabricated and investigated. ZnO films with thickness of 50 and 100 nm were deposited on half of diamond substrates by sputtering technique. Then, electrodes were patterned on ZnO and diamond areas to form photodetectors. The photocurrent gain in the UV region has been strongly influenced by ZnO film. ZnO films with thickness of 50 and 100 nm on diamond substrates reaches 14.3 and 308 A/W, respectively. Both of peak responsivities were located at 270 nm. Additionally, two shoulder peaks around 240 nm and 290 nm were observed for ZnO/diamond photodetector, which may stem from diamond and ZnO, respectively.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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  1. A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
    [Crossref]
  2. R. D. McKeag, S. S. M. Chan, and R. B. Jackman, “Polycrystalline diamond photoconductive device with high UV-visible discrimination,” Appl. Phys. Lett. 67(15), 2117–2119 (1995).
    [Crossref]
  3. M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detector,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
    [Crossref]
  4. J. Liu, Y. Xia, L. Wang, P. Zhao, Q. Su, and W. Shi, “A New ZnO Film Photodetector Fabricated on Diamond Substrate,” in 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, pp. 950–952.
  5. L. Luo, Y. Zhang, S. S. Mao, and L. Lin, “Fabrication and characterization of ZnO nanowires based UV photodiodes,” Sens. Actuators, A 127(2), 201–206 (2006).
    [Crossref]
  6. J. Liu, Y. Xia, L. Wang, Q. Su, and W. Shi, “Electrical characteristics of UV photodetectors based on ZnO/diamond film structure,” Appl. Surf. Sci. 253(12), 5218–5222 (2007).
    [Crossref]
  7. L. Qi, B. Sun, W. Wang, J. Zhang, H. Yang, and Y. Qi, “Microstructure of oxygen-deficient annealing-induced non-polar Zno films with extremely low electrical resistivity,” CrystEngComm 21(5), 791–795 (2019).
    [Crossref]
  8. R. R. Kumar, D. Punetha, R. Shukla, and S. K. Pandey, “Performance Optimization and Analysis of ZnO based Ultraviolet Photodiode,” in 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, pp. 5–6.
  9. J. Liu, Y. Xia, L. Wang, Q. Su, and W. Shi, “Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure,” J. Cryst. Growth 300(2), 353–357 (2007).
    [Crossref]
  10. Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Photoelectrical characteristics of ultrathin TiO2/diamond photodetector,” Mater. Lett. 188, 52–54 (2017).
    [Crossref]
  11. A. Saravanan, B. R. Huang, J. Lin, G. Keiser, and I. N. Lin, “Fast Photoresponse and Long Lifetime UV Photodetectors and Field Emitters Based on ZnO/Ultrananocrystalline Diamond Films,” Chem. - Eur. J. 21(45), 16017–16026 (2015).
    [Crossref]
  12. S. Gao, S. Jiao, B. Lei, H. Li, J. Wang, and Q. Yu, “Efficient photocatalyst based on zno nanorod arrays/p-type boron-doped-diamond heterojunction,” J. Mater. Sci.: Mater. Electron. 26(2), 1018–1022 (2015).
    [Crossref]
  13. X. Chang, Y. Wang, X. Zhang, Z. Liu, J. Fu, S. Fan, R. Bu, J. Zhang, W. Wang, H. Wang, and J. Wang, “UV-photodetector based on NiO/diamond film,” Appl. Phys. Lett. 112(3), 032103 (2018).
    [Crossref]
  14. M. Liao and Y. Koide, “High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film,” Appl. Phys. Lett. 89(11), 113509 (2006).
    [Crossref]
  15. M. Liao, Y. Koide, J. Alvarez, M. Imura, and J. P. Kleider, “Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors,” Phys. Rev. B 78(4), 045112 (2008).
    [Crossref]

2019 (1)

L. Qi, B. Sun, W. Wang, J. Zhang, H. Yang, and Y. Qi, “Microstructure of oxygen-deficient annealing-induced non-polar Zno films with extremely low electrical resistivity,” CrystEngComm 21(5), 791–795 (2019).
[Crossref]

2018 (1)

X. Chang, Y. Wang, X. Zhang, Z. Liu, J. Fu, S. Fan, R. Bu, J. Zhang, W. Wang, H. Wang, and J. Wang, “UV-photodetector based on NiO/diamond film,” Appl. Phys. Lett. 112(3), 032103 (2018).
[Crossref]

2017 (1)

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Photoelectrical characteristics of ultrathin TiO2/diamond photodetector,” Mater. Lett. 188, 52–54 (2017).
[Crossref]

2015 (2)

A. Saravanan, B. R. Huang, J. Lin, G. Keiser, and I. N. Lin, “Fast Photoresponse and Long Lifetime UV Photodetectors and Field Emitters Based on ZnO/Ultrananocrystalline Diamond Films,” Chem. - Eur. J. 21(45), 16017–16026 (2015).
[Crossref]

S. Gao, S. Jiao, B. Lei, H. Li, J. Wang, and Q. Yu, “Efficient photocatalyst based on zno nanorod arrays/p-type boron-doped-diamond heterojunction,” J. Mater. Sci.: Mater. Electron. 26(2), 1018–1022 (2015).
[Crossref]

2012 (1)

M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detector,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
[Crossref]

2009 (1)

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

2008 (1)

M. Liao, Y. Koide, J. Alvarez, M. Imura, and J. P. Kleider, “Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors,” Phys. Rev. B 78(4), 045112 (2008).
[Crossref]

2007 (2)

J. Liu, Y. Xia, L. Wang, Q. Su, and W. Shi, “Electrical characteristics of UV photodetectors based on ZnO/diamond film structure,” Appl. Surf. Sci. 253(12), 5218–5222 (2007).
[Crossref]

J. Liu, Y. Xia, L. Wang, Q. Su, and W. Shi, “Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure,” J. Cryst. Growth 300(2), 353–357 (2007).
[Crossref]

2006 (2)

L. Luo, Y. Zhang, S. S. Mao, and L. Lin, “Fabrication and characterization of ZnO nanowires based UV photodiodes,” Sens. Actuators, A 127(2), 201–206 (2006).
[Crossref]

M. Liao and Y. Koide, “High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film,” Appl. Phys. Lett. 89(11), 113509 (2006).
[Crossref]

1995 (1)

R. D. McKeag, S. S. M. Chan, and R. B. Jackman, “Polycrystalline diamond photoconductive device with high UV-visible discrimination,” Appl. Phys. Lett. 67(15), 2117–2119 (1995).
[Crossref]

Alvarez, J.

M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detector,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
[Crossref]

M. Liao, Y. Koide, J. Alvarez, M. Imura, and J. P. Kleider, “Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors,” Phys. Rev. B 78(4), 045112 (2008).
[Crossref]

Ao, J.-P.

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Photoelectrical characteristics of ultrathin TiO2/diamond photodetector,” Mater. Lett. 188, 52–54 (2017).
[Crossref]

Barkad, H. A.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

BenMoussa, A.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

BenMoussa, B.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Bolsee, D.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Bu, R.

X. Chang, Y. Wang, X. Zhang, Z. Liu, J. Fu, S. Fan, R. Bu, J. Zhang, W. Wang, H. Wang, and J. Wang, “UV-photodetector based on NiO/diamond film,” Appl. Phys. Lett. 112(3), 032103 (2018).
[Crossref]

Chan, S. S. M.

R. D. McKeag, S. S. M. Chan, and R. B. Jackman, “Polycrystalline diamond photoconductive device with high UV-visible discrimination,” Appl. Phys. Lett. 67(15), 2117–2119 (1995).
[Crossref]

Chang, X.

X. Chang, Y. Wang, X. Zhang, Z. Liu, J. Fu, S. Fan, R. Bu, J. Zhang, W. Wang, H. Wang, and J. Wang, “UV-photodetector based on NiO/diamond film,” Appl. Phys. Lett. 112(3), 032103 (2018).
[Crossref]

Chong, Y. M.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Dahal, R.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

De Jaeger, J. C.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Fan, S.

X. Chang, Y. Wang, X. Zhang, Z. Liu, J. Fu, S. Fan, R. Bu, J. Zhang, W. Wang, H. Wang, and J. Wang, “UV-photodetector based on NiO/diamond film,” Appl. Phys. Lett. 112(3), 032103 (2018).
[Crossref]

Fu, J.

X. Chang, Y. Wang, X. Zhang, Z. Liu, J. Fu, S. Fan, R. Bu, J. Zhang, W. Wang, H. Wang, and J. Wang, “UV-photodetector based on NiO/diamond film,” Appl. Phys. Lett. 112(3), 032103 (2018).
[Crossref]

Gao, S.

S. Gao, S. Jiao, B. Lei, H. Li, J. Wang, and Q. Yu, “Efficient photocatalyst based on zno nanorod arrays/p-type boron-doped-diamond heterojunction,” J. Mater. Sci.: Mater. Electron. 26(2), 1018–1022 (2015).
[Crossref]

Giordanengo, B.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Haenen, K.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Hermans, C.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Hochedez, J. F.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Huang, B. R.

A. Saravanan, B. R. Huang, J. Lin, G. Keiser, and I. N. Lin, “Fast Photoresponse and Long Lifetime UV Photodetectors and Field Emitters Based on ZnO/Ultrananocrystalline Diamond Films,” Chem. - Eur. J. 21(45), 16017–16026 (2015).
[Crossref]

Imura, M.

M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detector,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
[Crossref]

M. Liao, Y. Koide, J. Alvarez, M. Imura, and J. P. Kleider, “Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors,” Phys. Rev. B 78(4), 045112 (2008).
[Crossref]

Jackman, R. B.

R. D. McKeag, S. S. M. Chan, and R. B. Jackman, “Polycrystalline diamond photoconductive device with high UV-visible discrimination,” Appl. Phys. Lett. 67(15), 2117–2119 (1995).
[Crossref]

Jiang, H. X.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Jiao, S.

S. Gao, S. Jiao, B. Lei, H. Li, J. Wang, and Q. Yu, “Efficient photocatalyst based on zno nanorod arrays/p-type boron-doped-diamond heterojunction,” J. Mater. Sci.: Mater. Electron. 26(2), 1018–1022 (2015).
[Crossref]

Keiser, G.

A. Saravanan, B. R. Huang, J. Lin, G. Keiser, and I. N. Lin, “Fast Photoresponse and Long Lifetime UV Photodetectors and Field Emitters Based on ZnO/Ultrananocrystalline Diamond Films,” Chem. - Eur. J. 21(45), 16017–16026 (2015).
[Crossref]

Kleider, J. P.

M. Liao, Y. Koide, J. Alvarez, M. Imura, and J. P. Kleider, “Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors,” Phys. Rev. B 78(4), 045112 (2008).
[Crossref]

Koide, Y.

M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detector,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
[Crossref]

M. Liao, Y. Koide, J. Alvarez, M. Imura, and J. P. Kleider, “Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors,” Phys. Rev. B 78(4), 045112 (2008).
[Crossref]

M. Liao and Y. Koide, “High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film,” Appl. Phys. Lett. 89(11), 113509 (2006).
[Crossref]

Kroth, U.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Kumar, R. R.

R. R. Kumar, D. Punetha, R. Shukla, and S. K. Pandey, “Performance Optimization and Analysis of ZnO based Ultraviolet Photodiode,” in 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, pp. 5–6.

Laubis, C.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Lei, B.

S. Gao, S. Jiao, B. Lei, H. Li, J. Wang, and Q. Yu, “Efficient photocatalyst based on zno nanorod arrays/p-type boron-doped-diamond heterojunction,” J. Mater. Sci.: Mater. Electron. 26(2), 1018–1022 (2015).
[Crossref]

Li, F.

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Photoelectrical characteristics of ultrathin TiO2/diamond photodetector,” Mater. Lett. 188, 52–54 (2017).
[Crossref]

Li, H.

S. Gao, S. Jiao, B. Lei, H. Li, J. Wang, and Q. Yu, “Efficient photocatalyst based on zno nanorod arrays/p-type boron-doped-diamond heterojunction,” J. Mater. Sci.: Mater. Electron. 26(2), 1018–1022 (2015).
[Crossref]

Liao, M.

M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detector,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
[Crossref]

M. Liao, Y. Koide, J. Alvarez, M. Imura, and J. P. Kleider, “Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors,” Phys. Rev. B 78(4), 045112 (2008).
[Crossref]

M. Liao and Y. Koide, “High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film,” Appl. Phys. Lett. 89(11), 113509 (2006).
[Crossref]

Lin, I. N.

A. Saravanan, B. R. Huang, J. Lin, G. Keiser, and I. N. Lin, “Fast Photoresponse and Long Lifetime UV Photodetectors and Field Emitters Based on ZnO/Ultrananocrystalline Diamond Films,” Chem. - Eur. J. 21(45), 16017–16026 (2015).
[Crossref]

Lin, J.

A. Saravanan, B. R. Huang, J. Lin, G. Keiser, and I. N. Lin, “Fast Photoresponse and Long Lifetime UV Photodetectors and Field Emitters Based on ZnO/Ultrananocrystalline Diamond Films,” Chem. - Eur. J. 21(45), 16017–16026 (2015).
[Crossref]

Lin, J. Y.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Lin, L.

L. Luo, Y. Zhang, S. S. Mao, and L. Lin, “Fabrication and characterization of ZnO nanowires based UV photodiodes,” Sens. Actuators, A 127(2), 201–206 (2006).
[Crossref]

Liu, J.

J. Liu, Y. Xia, L. Wang, Q. Su, and W. Shi, “Electrical characteristics of UV photodetectors based on ZnO/diamond film structure,” Appl. Surf. Sci. 253(12), 5218–5222 (2007).
[Crossref]

J. Liu, Y. Xia, L. Wang, Q. Su, and W. Shi, “Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure,” J. Cryst. Growth 300(2), 353–357 (2007).
[Crossref]

J. Liu, Y. Xia, L. Wang, P. Zhao, Q. Su, and W. Shi, “A New ZnO Film Photodetector Fabricated on Diamond Substrate,” in 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, pp. 950–952.

Liu, Z.

X. Chang, Y. Wang, X. Zhang, Z. Liu, J. Fu, S. Fan, R. Bu, J. Zhang, W. Wang, H. Wang, and J. Wang, “UV-photodetector based on NiO/diamond film,” Appl. Phys. Lett. 112(3), 032103 (2018).
[Crossref]

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Photoelectrical characteristics of ultrathin TiO2/diamond photodetector,” Mater. Lett. 188, 52–54 (2017).
[Crossref]

Luo, L.

L. Luo, Y. Zhang, S. S. Mao, and L. Lin, “Fabrication and characterization of ZnO nanowires based UV photodiodes,” Sens. Actuators, A 127(2), 201–206 (2006).
[Crossref]

Mao, S. S.

L. Luo, Y. Zhang, S. S. Mao, and L. Lin, “Fabrication and characterization of ZnO nanowires based UV photodiodes,” Sens. Actuators, A 127(2), 201–206 (2006).
[Crossref]

McKeag, R. D.

R. D. McKeag, S. S. M. Chan, and R. B. Jackman, “Polycrystalline diamond photoconductive device with high UV-visible discrimination,” Appl. Phys. Lett. 67(15), 2117–2119 (1995).
[Crossref]

Mortet, V.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Pandey, S. K.

R. R. Kumar, D. Punetha, R. Shukla, and S. K. Pandey, “Performance Optimization and Analysis of ZnO based Ultraviolet Photodiode,” in 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, pp. 5–6.

Punetha, D.

R. R. Kumar, D. Punetha, R. Shukla, and S. K. Pandey, “Performance Optimization and Analysis of ZnO based Ultraviolet Photodiode,” in 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, pp. 5–6.

Qi, L.

L. Qi, B. Sun, W. Wang, J. Zhang, H. Yang, and Y. Qi, “Microstructure of oxygen-deficient annealing-induced non-polar Zno films with extremely low electrical resistivity,” CrystEngComm 21(5), 791–795 (2019).
[Crossref]

Qi, Y.

L. Qi, B. Sun, W. Wang, J. Zhang, H. Yang, and Y. Qi, “Microstructure of oxygen-deficient annealing-induced non-polar Zno films with extremely low electrical resistivity,” CrystEngComm 21(5), 791–795 (2019).
[Crossref]

Richter, M.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Sang, L.

M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detector,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
[Crossref]

Saravanan, A.

A. Saravanan, B. R. Huang, J. Lin, G. Keiser, and I. N. Lin, “Fast Photoresponse and Long Lifetime UV Photodetectors and Field Emitters Based on ZnO/Ultrananocrystalline Diamond Films,” Chem. - Eur. J. 21(45), 16017–16026 (2015).
[Crossref]

Scholze, F.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Schühle, U.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Shi, W.

J. Liu, Y. Xia, L. Wang, Q. Su, and W. Shi, “Electrical characteristics of UV photodetectors based on ZnO/diamond film structure,” Appl. Surf. Sci. 253(12), 5218–5222 (2007).
[Crossref]

J. Liu, Y. Xia, L. Wang, Q. Su, and W. Shi, “Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure,” J. Cryst. Growth 300(2), 353–357 (2007).
[Crossref]

J. Liu, Y. Xia, L. Wang, P. Zhao, Q. Su, and W. Shi, “A New ZnO Film Photodetector Fabricated on Diamond Substrate,” in 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, pp. 950–952.

Shukla, R.

R. R. Kumar, D. Punetha, R. Shukla, and S. K. Pandey, “Performance Optimization and Analysis of ZnO based Ultraviolet Photodiode,” in 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, pp. 5–6.

Soltani, A.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Su, Q.

J. Liu, Y. Xia, L. Wang, Q. Su, and W. Shi, “Electrical characteristics of UV photodetectors based on ZnO/diamond film structure,” Appl. Surf. Sci. 253(12), 5218–5222 (2007).
[Crossref]

J. Liu, Y. Xia, L. Wang, Q. Su, and W. Shi, “Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure,” J. Cryst. Growth 300(2), 353–357 (2007).
[Crossref]

J. Liu, Y. Xia, L. Wang, P. Zhao, Q. Su, and W. Shi, “A New ZnO Film Photodetector Fabricated on Diamond Substrate,” in 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, pp. 950–952.

Sun, B.

L. Qi, B. Sun, W. Wang, J. Zhang, H. Yang, and Y. Qi, “Microstructure of oxygen-deficient annealing-induced non-polar Zno films with extremely low electrical resistivity,” CrystEngComm 21(5), 791–795 (2019).
[Crossref]

Teraji, T.

M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detector,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
[Crossref]

Wang, H.

X. Chang, Y. Wang, X. Zhang, Z. Liu, J. Fu, S. Fan, R. Bu, J. Zhang, W. Wang, H. Wang, and J. Wang, “UV-photodetector based on NiO/diamond film,” Appl. Phys. Lett. 112(3), 032103 (2018).
[Crossref]

Wang, H.-X.

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Photoelectrical characteristics of ultrathin TiO2/diamond photodetector,” Mater. Lett. 188, 52–54 (2017).
[Crossref]

Wang, J.

X. Chang, Y. Wang, X. Zhang, Z. Liu, J. Fu, S. Fan, R. Bu, J. Zhang, W. Wang, H. Wang, and J. Wang, “UV-photodetector based on NiO/diamond film,” Appl. Phys. Lett. 112(3), 032103 (2018).
[Crossref]

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Photoelectrical characteristics of ultrathin TiO2/diamond photodetector,” Mater. Lett. 188, 52–54 (2017).
[Crossref]

S. Gao, S. Jiao, B. Lei, H. Li, J. Wang, and Q. Yu, “Efficient photocatalyst based on zno nanorod arrays/p-type boron-doped-diamond heterojunction,” J. Mater. Sci.: Mater. Electron. 26(2), 1018–1022 (2015).
[Crossref]

Wang, L.

J. Liu, Y. Xia, L. Wang, Q. Su, and W. Shi, “Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure,” J. Cryst. Growth 300(2), 353–357 (2007).
[Crossref]

J. Liu, Y. Xia, L. Wang, Q. Su, and W. Shi, “Electrical characteristics of UV photodetectors based on ZnO/diamond film structure,” Appl. Surf. Sci. 253(12), 5218–5222 (2007).
[Crossref]

J. Liu, Y. Xia, L. Wang, P. Zhao, Q. Su, and W. Shi, “A New ZnO Film Photodetector Fabricated on Diamond Substrate,” in 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, pp. 950–952.

Wang, W.

L. Qi, B. Sun, W. Wang, J. Zhang, H. Yang, and Y. Qi, “Microstructure of oxygen-deficient annealing-induced non-polar Zno films with extremely low electrical resistivity,” CrystEngComm 21(5), 791–795 (2019).
[Crossref]

X. Chang, Y. Wang, X. Zhang, Z. Liu, J. Fu, S. Fan, R. Bu, J. Zhang, W. Wang, H. Wang, and J. Wang, “UV-photodetector based on NiO/diamond film,” Appl. Phys. Lett. 112(3), 032103 (2018).
[Crossref]

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Photoelectrical characteristics of ultrathin TiO2/diamond photodetector,” Mater. Lett. 188, 52–54 (2017).
[Crossref]

Wang, Y.

X. Chang, Y. Wang, X. Zhang, Z. Liu, J. Fu, S. Fan, R. Bu, J. Zhang, W. Wang, H. Wang, and J. Wang, “UV-photodetector based on NiO/diamond film,” Appl. Phys. Lett. 112(3), 032103 (2018).
[Crossref]

Xia, Y.

J. Liu, Y. Xia, L. Wang, Q. Su, and W. Shi, “Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure,” J. Cryst. Growth 300(2), 353–357 (2007).
[Crossref]

J. Liu, Y. Xia, L. Wang, Q. Su, and W. Shi, “Electrical characteristics of UV photodetectors based on ZnO/diamond film structure,” Appl. Surf. Sci. 253(12), 5218–5222 (2007).
[Crossref]

J. Liu, Y. Xia, L. Wang, P. Zhao, Q. Su, and W. Shi, “A New ZnO Film Photodetector Fabricated on Diamond Substrate,” in 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, pp. 950–952.

Yang, H.

L. Qi, B. Sun, W. Wang, J. Zhang, H. Yang, and Y. Qi, “Microstructure of oxygen-deficient annealing-induced non-polar Zno films with extremely low electrical resistivity,” CrystEngComm 21(5), 791–795 (2019).
[Crossref]

Yu, Q.

S. Gao, S. Jiao, B. Lei, H. Li, J. Wang, and Q. Yu, “Efficient photocatalyst based on zno nanorod arrays/p-type boron-doped-diamond heterojunction,” J. Mater. Sci.: Mater. Electron. 26(2), 1018–1022 (2015).
[Crossref]

Zhang, J.

L. Qi, B. Sun, W. Wang, J. Zhang, H. Yang, and Y. Qi, “Microstructure of oxygen-deficient annealing-induced non-polar Zno films with extremely low electrical resistivity,” CrystEngComm 21(5), 791–795 (2019).
[Crossref]

X. Chang, Y. Wang, X. Zhang, Z. Liu, J. Fu, S. Fan, R. Bu, J. Zhang, W. Wang, H. Wang, and J. Wang, “UV-photodetector based on NiO/diamond film,” Appl. Phys. Lett. 112(3), 032103 (2018).
[Crossref]

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Photoelectrical characteristics of ultrathin TiO2/diamond photodetector,” Mater. Lett. 188, 52–54 (2017).
[Crossref]

Zhang, W. J.

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

Zhang, X.

X. Chang, Y. Wang, X. Zhang, Z. Liu, J. Fu, S. Fan, R. Bu, J. Zhang, W. Wang, H. Wang, and J. Wang, “UV-photodetector based on NiO/diamond film,” Appl. Phys. Lett. 112(3), 032103 (2018).
[Crossref]

Zhang, Y.

L. Luo, Y. Zhang, S. S. Mao, and L. Lin, “Fabrication and characterization of ZnO nanowires based UV photodiodes,” Sens. Actuators, A 127(2), 201–206 (2006).
[Crossref]

Zhao, P.

J. Liu, Y. Xia, L. Wang, P. Zhao, Q. Su, and W. Shi, “A New ZnO Film Photodetector Fabricated on Diamond Substrate,” in 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, pp. 950–952.

Appl. Phys. Lett. (3)

R. D. McKeag, S. S. M. Chan, and R. B. Jackman, “Polycrystalline diamond photoconductive device with high UV-visible discrimination,” Appl. Phys. Lett. 67(15), 2117–2119 (1995).
[Crossref]

X. Chang, Y. Wang, X. Zhang, Z. Liu, J. Fu, S. Fan, R. Bu, J. Zhang, W. Wang, H. Wang, and J. Wang, “UV-photodetector based on NiO/diamond film,” Appl. Phys. Lett. 112(3), 032103 (2018).
[Crossref]

M. Liao and Y. Koide, “High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film,” Appl. Phys. Lett. 89(11), 113509 (2006).
[Crossref]

Appl. Surf. Sci. (1)

J. Liu, Y. Xia, L. Wang, Q. Su, and W. Shi, “Electrical characteristics of UV photodetectors based on ZnO/diamond film structure,” Appl. Surf. Sci. 253(12), 5218–5222 (2007).
[Crossref]

Chem. - Eur. J. (1)

A. Saravanan, B. R. Huang, J. Lin, G. Keiser, and I. N. Lin, “Fast Photoresponse and Long Lifetime UV Photodetectors and Field Emitters Based on ZnO/Ultrananocrystalline Diamond Films,” Chem. - Eur. J. 21(45), 16017–16026 (2015).
[Crossref]

CrystEngComm (1)

L. Qi, B. Sun, W. Wang, J. Zhang, H. Yang, and Y. Qi, “Microstructure of oxygen-deficient annealing-induced non-polar Zno films with extremely low electrical resistivity,” CrystEngComm 21(5), 791–795 (2019).
[Crossref]

Diamond Relat. Mater. (1)

A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y. M. Chong, W. J. Zhang, R. Dahal, J. Y. Lin, H. X. Jiang, H. A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J. C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J. F. Hochedez, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond Relat. Mater. 18(5-8), 860–864 (2009).
[Crossref]

J. Cryst. Growth (1)

J. Liu, Y. Xia, L. Wang, Q. Su, and W. Shi, “Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure,” J. Cryst. Growth 300(2), 353–357 (2007).
[Crossref]

J. Mater. Sci.: Mater. Electron. (1)

S. Gao, S. Jiao, B. Lei, H. Li, J. Wang, and Q. Yu, “Efficient photocatalyst based on zno nanorod arrays/p-type boron-doped-diamond heterojunction,” J. Mater. Sci.: Mater. Electron. 26(2), 1018–1022 (2015).
[Crossref]

Jpn. J. Appl. Phys. (1)

M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detector,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
[Crossref]

Mater. Lett. (1)

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Photoelectrical characteristics of ultrathin TiO2/diamond photodetector,” Mater. Lett. 188, 52–54 (2017).
[Crossref]

Phys. Rev. B (1)

M. Liao, Y. Koide, J. Alvarez, M. Imura, and J. P. Kleider, “Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors,” Phys. Rev. B 78(4), 045112 (2008).
[Crossref]

Sens. Actuators, A (1)

L. Luo, Y. Zhang, S. S. Mao, and L. Lin, “Fabrication and characterization of ZnO nanowires based UV photodiodes,” Sens. Actuators, A 127(2), 201–206 (2006).
[Crossref]

Other (2)

J. Liu, Y. Xia, L. Wang, P. Zhao, Q. Su, and W. Shi, “A New ZnO Film Photodetector Fabricated on Diamond Substrate,” in 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, pp. 950–952.

R. R. Kumar, D. Punetha, R. Shukla, and S. K. Pandey, “Performance Optimization and Analysis of ZnO based Ultraviolet Photodiode,” in 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, pp. 5–6.

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Figures (8)

Fig. 1.
Fig. 1. Optical image of 50 nm ZnO/diamond photodetector and diamond photodetector.
Fig. 2.
Fig. 2. AFM images of (a) diamond surface and (b) ZnO surface.
Fig. 3.
Fig. 3. (a) XPS full spectrum of 50 nm thick ZnO film on diamond. (b) XPS spectrum of C 1S core level. (c) XPS spectrum of O 1S core level. (d) XPS spectrum of Zn 2p core level.
Fig. 4.
Fig. 4. IV characteristics of (a) 50 nm ZnO/diamond photodetector and (b) diamond photodetector.
Fig. 5.
Fig. 5. (a) Spectral response of 50 nm ZnO/diamond photodetector and diamond photodetector at 10 V bias. (b) Spectral response of 50 nm ZnO/diamond photodetector at different bias voltages.
Fig. 6.
Fig. 6. The energy band diagram of ZnO/diamond.
Fig. 7.
Fig. 7. The responsivities of ZnO/diamond photodetector and ZnO photodetector at 10 V bias.
Fig. 8.
Fig. 8. The responsivity of 100 nm ZnO/diamond photodetector at different bias.

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