Abstract

ZnO is a promising short-wavelength light-emitting materials for its wide bandgap (3.37 eV) and large exciton binding energy (∼60 meV), however, practical p-type doped ZnO is the main challenge in this field. Here, Blue light-emitting diodes (LEDs) based on the homogeneous junctions of Sb doped ZnO nanowire arrays grown on Ga doped ZnO single crystal substrate are fabricated. Element analysis, FET and Hall-effect measurements demonstrate that the Sb atom has been successfully doped into ZnO nanowires to from p-type conductivity. On the benefit of high quality of nano-size homojunction, the fabricated LED shows low turn-on voltage turn-on voltage as low as 3.4 V and strong blue emission peak located at 425 nm at room temperature, which originate from interfacial recombination of ZnO nanowire p-n homojunctions. The present blue LED based on ZnO material may have potential applications in short-wavelength optoelectronic devices.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  22. G. Wang, S. Chu, N. Zhan, H. Zhou, and J. Liu, “Synthesis and Characterization of Ag-doped p-type ZnO Nanowires,” Appl. Phys. A 103(4), 951–954 (2011).
    [Crossref]
  23. S. D. Baek, P. Biswas, J. W. Kim, Y. C. Kim, T. I. Lee, and J. M. Myoung, “Low-Temperature Facile Synthesis of Sb-Doped p-Type ZnO Nanodisks and Its Application in Homojunction Light-Emitting Diode,” ACS Appl. Mater. Interfaces 8(20), 13018–13026 (2016).
    [Crossref]
  24. Y. Yang, X. W. Sun, B. K. Tay, G. F. You, S. T. Tan, and K. L. Teo, “A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation,” Appl. Phys. Lett. 93(25), 253107 (2008).
    [Crossref]
  25. J.-Y. Zhang, P.-J. Li, H. Sun, X. Shen, T.-S. Deng, K.-T. Zhu, Q.-F. Zhang, and J.-L. Wu, “Ultraviolet Electroluminescence from Controlled Arsenic-doped ZnO Nanowire Homojunctions,” Appl. Phys. Lett. 93(2), 021116 (2008).
    [Crossref]
  26. Q. Feng, H. Liang, Y. Mei, J. Liu, C. C. Ling, P. Tao, D. Pan, and Y. Yang, “ZnO single microwire homojunction light emitting diode grown by electric field assisted chemical vapor deposition,” J. Mater. Chem. C 3(18), 4678–4682 (2015).
    [Crossref]
  27. A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium-Assisted p-Type Doping for ZnO Homojunction Light-Emitting Devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
    [Crossref]
  28. X. L. Ren, X. H. Zhang, N. S. Liu, L. Wen, L. W. Ding, Z. W. Ma, J. Su, L. Y. Li, J. B. Han, and Y. H. Gao, “White Light-Emitting Diode from Sb-Doped p-ZnO Nanowire Arrays/n-GaN Film,” Adv. Funct. Mater. 25(14), 2182–2188 (2015).
    [Crossref]
  29. M.-P. Lu, M.-Y. Lu, and L.-J. Chen, “p-Type ZnO nanowires: From synthesis to nanoenergy,” Nano Energy 1(2), 247–258 (2012).
    [Crossref]
  30. J. G. Reynolds, C. L. Reynolds, A. Mohanta, J. F. Muth, J. E. Rowe, H. O. Everitt, and D. E. Aspnes, “Shallow acceptor complexes in p-type ZnO,” Appl. Phys. Lett. 102(15), 152114 (2013).
    [Crossref]
  31. F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. Liu, “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy,” Appl. Phys. Lett. 87(25), 252102 (2005).
    [Crossref]
  32. Y. Y. Tay, S. Li, C. Q. Sun, and P. Chen, “Size dependence of Zn 2p 3∕2 binding energy in nanocrystalline ZnO,” Appl. Phys. Lett. 88(17), 173118 (2006).
    [Crossref]
  33. E. V. Benvenutti, Y. Gushikem, A. Vasquez, S. C. de Castro, and G. A. P. Zaldivar, “X-Ray Photoelectron Spectroscopy and Mössbauer Spectroscopy Study of Iron(III) and Antimony(V) Oxides Grafted onto a Silica Gel Surface,” J. Chem. Soc., Chem. Commun. 19, 1325–1327 (1991).
    [Crossref]
  34. T. H. Kao, J. Y. Chen, C. H. Chiu, C. W. Huang, and W. W. Wu, “Opto-electrical properties of Sb-doped p-type ZnO nanowires,” Appl. Phys. Lett. 104(11), 111909 (2014).
    [Crossref]
  35. J. Z. Zhao, H. W. Liang, J. C. Sun, J. M. Bian, Q. J. Feng, L. Z. Hu, H. Q. Zhang, X. P. Liang, Y. M. Luo, and G. T. Du, “Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology,” J. Phys. D: Appl. Phys. 41(19), 195110 (2008).
    [Crossref]

2017 (1)

G. He, M. Jiang, B. Li, Z. Zhang, H. Zhao, C. Shan, and D. Shen, “Sb-Doped ZnO microwires: emitting filament and homojunction light-emitting diodes,” J. Mater. Chem. C 5(42), 10938–10946 (2017).
[Crossref]

2016 (4)

X. Zhao, W. Liu, R. Chen, Y. Gao, B. Zhu, H. V. Demir, S. Wang, and H. Sun, “Exciton energy recycling from ZnO defect levels: towards electrically driven hybrid quantum-dot white light-emitting-diodes,” Nanoscale 8(11), 5835–5841 (2016).
[Crossref]

Y. M. Wang, Y. B. Han, J. B. Han, X. H. Zhang, Y. Chen, S. L. Wang, L. Wen, N. S. Liu, J. Su, L. Y. Li, and Y. H. Gao, “UV-free red electroluminescence from the cross-connected p-ZnO:Cu nanobushes/n-GaN light emitting diode,” Opt. Express 24(4), 3940–3949 (2016).
[Crossref]

S. D. Baek, P. Biswas, J. W. Kim, Y. C. Kim, T. I. Lee, and J. M. Myoung, “Low-Temperature Facile Synthesis of Sb-Doped p-Type ZnO Nanodisks and Its Application in Homojunction Light-Emitting Diode,” ACS Appl. Mater. Interfaces 8(20), 13018–13026 (2016).
[Crossref]

A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium-Assisted p-Type Doping for ZnO Homojunction Light-Emitting Devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
[Crossref]

2015 (2)

X. L. Ren, X. H. Zhang, N. S. Liu, L. Wen, L. W. Ding, Z. W. Ma, J. Su, L. Y. Li, J. B. Han, and Y. H. Gao, “White Light-Emitting Diode from Sb-Doped p-ZnO Nanowire Arrays/n-GaN Film,” Adv. Funct. Mater. 25(14), 2182–2188 (2015).
[Crossref]

Q. Feng, H. Liang, Y. Mei, J. Liu, C. C. Ling, P. Tao, D. Pan, and Y. Yang, “ZnO single microwire homojunction light emitting diode grown by electric field assisted chemical vapor deposition,” J. Mater. Chem. C 3(18), 4678–4682 (2015).
[Crossref]

2014 (3)

T. H. Kao, J. Y. Chen, C. H. Chiu, C. W. Huang, and W. W. Wu, “Opto-electrical properties of Sb-doped p-type ZnO nanowires,” Appl. Phys. Lett. 104(11), 111909 (2014).
[Crossref]

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward Smart and Ultra-efficient Solid-State Lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

X. H. Zhang, L. Y. Li, J. Su, Y. M. Wang, Y. L. Shi, X. L. Ren, N. S. Liu, A. Q. Zhang, J. Zhou, and Y. H. Gao, “Bandgap engineering of GaxZn1-xO nanowire arrays for wavelength-tunable light-emitting diodes,” Laser Photonics Rev. 8(3), 429–435 (2014).
[Crossref]

2013 (3)

D. Panda and T.-Y. Tseng, “One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications,” J. Mater. Sci. 48(20), 6849–6877 (2013).
[Crossref]

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[Crossref]

J. G. Reynolds, C. L. Reynolds, A. Mohanta, J. F. Muth, J. E. Rowe, H. O. Everitt, and D. E. Aspnes, “Shallow acceptor complexes in p-type ZnO,” Appl. Phys. Lett. 102(15), 152114 (2013).
[Crossref]

2012 (2)

M.-P. Lu, M.-Y. Lu, and L.-J. Chen, “p-Type ZnO nanowires: From synthesis to nanoenergy,” Nano Energy 1(2), 247–258 (2012).
[Crossref]

X. Zhang, X. Han, J. Su, Q. Zhang, and Y. Gao, “Well Vertically Aligned ZnO Nanowire Arrays with an Ultra-fast Recovery Time for UV Photodetector,” Appl. Phys. A 107(2), 255–260 (2012).
[Crossref]

2011 (3)

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref]

F. Wang, J. H. Seo, D. Bayerl, J. Shi, H. Mi, Z. Ma, D. Zhao, Y. Shuai, W. Zhou, and X. Wang, “An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires,” Nanotechnology 22(22), 225602 (2011).
[Crossref]

G. Wang, S. Chu, N. Zhan, H. Zhou, and J. Liu, “Synthesis and Characterization of Ag-doped p-type ZnO Nanowires,” Appl. Phys. A 103(4), 951–954 (2011).
[Crossref]

2010 (4)

W. Liu, F. Xiu, K. Sun, Y. H. Xie, K. L. Wang, Y. Wang, J. Zou, Z. Yang, and J. Liu, “Na-doped p-type ZnO Microwires,” J. Am. Chem. Soc. 132(8), 2498–2499 (2010).
[Crossref]

O. Lupan, T. Pauporte, and B. Viana, “Low-Voltage UV-Electroluminescence from ZnO-Nanowire Array/p-GaN Light-Emitting Diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[Crossref]

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs made with in situ doped p-n homojunction ZnO nanowire arrays,” Nano Lett. 10(11), 4387–4393 (2010).
[Crossref]

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref]

2009 (2)

X.-M. Zhang, M.-Y. Lu, Y. Zhang, L.-J. Chen, and Z. L. Wang, “Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

P. J. Li, Z. M. Liao, X. Z. Zhang, X. J. Zhang, H. C. Zhu, J. Y. Gao, K. Laurent, Y. Leprince-Wang, N. Wang, and D. P. Yu, “Electrical and photoresponse properties of an intramolecular p-n homojunction in single phosphorus-doped ZnO nanowires,” Nano Lett. 9(7), 2513–2518 (2009).
[Crossref]

2008 (4)

G. D. Yuan, W. J. Zhang, J. S. Jie, X. Fan, J. A. Zapien, Y. H. Leung, L. B. Luo, P. F. Wang, C. S. Lee, and S. T. Lee, “p-type ZnO nanowire arrays,” Nano Lett. 8(8), 2591–2597 (2008).
[Crossref]

Y. Yang, X. W. Sun, B. K. Tay, G. F. You, S. T. Tan, and K. L. Teo, “A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation,” Appl. Phys. Lett. 93(25), 253107 (2008).
[Crossref]

J.-Y. Zhang, P.-J. Li, H. Sun, X. Shen, T.-S. Deng, K.-T. Zhu, Q.-F. Zhang, and J.-L. Wu, “Ultraviolet Electroluminescence from Controlled Arsenic-doped ZnO Nanowire Homojunctions,” Appl. Phys. Lett. 93(2), 021116 (2008).
[Crossref]

J. Z. Zhao, H. W. Liang, J. C. Sun, J. M. Bian, Q. J. Feng, L. Z. Hu, H. Q. Zhang, X. P. Liang, Y. M. Luo, and G. T. Du, “Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology,” J. Phys. D: Appl. Phys. 41(19), 195110 (2008).
[Crossref]

2007 (1)

D.-K. Hwang, M.-S. Oh, J.-H. Lim, and S.-J. Park, “ZnO thin films and light-emitting diodes,” J. Phys. D: Appl. Phys. 40(22), R387–R412 (2007).
[Crossref]

2006 (1)

Y. Y. Tay, S. Li, C. Q. Sun, and P. Chen, “Size dependence of Zn 2p 3∕2 binding energy in nanocrystalline ZnO,” Appl. Phys. Lett. 88(17), 173118 (2006).
[Crossref]

2005 (2)

F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. Liu, “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy,” Appl. Phys. Lett. 87(25), 252102 (2005).
[Crossref]

U. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

2004 (2)

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[Crossref]

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[Crossref]

1991 (1)

E. V. Benvenutti, Y. Gushikem, A. Vasquez, S. C. de Castro, and G. A. P. Zaldivar, “X-Ray Photoelectron Spectroscopy and Mössbauer Spectroscopy Study of Iron(III) and Antimony(V) Oxides Grafted onto a Silica Gel Surface,” J. Chem. Soc., Chem. Commun. 19, 1325–1327 (1991).
[Crossref]

Alivov, Y. I.

U. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Aspnes, D. E.

J. G. Reynolds, C. L. Reynolds, A. Mohanta, J. F. Muth, J. E. Rowe, H. O. Everitt, and D. E. Aspnes, “Shallow acceptor complexes in p-type ZnO,” Appl. Phys. Lett. 102(15), 152114 (2013).
[Crossref]

Avrutin, V.

U. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Baek, S. D.

S. D. Baek, P. Biswas, J. W. Kim, Y. C. Kim, T. I. Lee, and J. M. Myoung, “Low-Temperature Facile Synthesis of Sb-Doped p-Type ZnO Nanodisks and Its Application in Homojunction Light-Emitting Diode,” ACS Appl. Mater. Interfaces 8(20), 13018–13026 (2016).
[Crossref]

Bayerl, D.

F. Wang, J. H. Seo, D. Bayerl, J. Shi, H. Mi, Z. Ma, D. Zhao, Y. Shuai, W. Zhou, and X. Wang, “An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires,” Nanotechnology 22(22), 225602 (2011).
[Crossref]

Benvenutti, E. V.

E. V. Benvenutti, Y. Gushikem, A. Vasquez, S. C. de Castro, and G. A. P. Zaldivar, “X-Ray Photoelectron Spectroscopy and Mössbauer Spectroscopy Study of Iron(III) and Antimony(V) Oxides Grafted onto a Silica Gel Surface,” J. Chem. Soc., Chem. Commun. 19, 1325–1327 (1991).
[Crossref]

Bian, J. M.

J. Z. Zhao, H. W. Liang, J. C. Sun, J. M. Bian, Q. J. Feng, L. Z. Hu, H. Q. Zhang, X. P. Liang, Y. M. Luo, and G. T. Du, “Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology,” J. Phys. D: Appl. Phys. 41(19), 195110 (2008).
[Crossref]

Biswas, P.

S. D. Baek, P. Biswas, J. W. Kim, Y. C. Kim, T. I. Lee, and J. M. Myoung, “Low-Temperature Facile Synthesis of Sb-Doped p-Type ZnO Nanodisks and Its Application in Homojunction Light-Emitting Diode,” ACS Appl. Mater. Interfaces 8(20), 13018–13026 (2016).
[Crossref]

Chang, S. L.

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[Crossref]

Chang, Y. C.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs made with in situ doped p-n homojunction ZnO nanowire arrays,” Nano Lett. 10(11), 4387–4393 (2010).
[Crossref]

Chen, A.

A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium-Assisted p-Type Doping for ZnO Homojunction Light-Emitting Devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
[Crossref]

Chen, J. Y.

T. H. Kao, J. Y. Chen, C. H. Chiu, C. W. Huang, and W. W. Wu, “Opto-electrical properties of Sb-doped p-type ZnO nanowires,” Appl. Phys. Lett. 104(11), 111909 (2014).
[Crossref]

Chen, L. J.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs made with in situ doped p-n homojunction ZnO nanowire arrays,” Nano Lett. 10(11), 4387–4393 (2010).
[Crossref]

Chen, L.-J.

M.-P. Lu, M.-Y. Lu, and L.-J. Chen, “p-Type ZnO nanowires: From synthesis to nanoenergy,” Nano Energy 1(2), 247–258 (2012).
[Crossref]

X.-M. Zhang, M.-Y. Lu, Y. Zhang, L.-J. Chen, and Z. L. Wang, “Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Chen, M.

A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium-Assisted p-Type Doping for ZnO Homojunction Light-Emitting Devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
[Crossref]

Chen, M. T.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs made with in situ doped p-n homojunction ZnO nanowire arrays,” Nano Lett. 10(11), 4387–4393 (2010).
[Crossref]

Chen, P.

Y. Y. Tay, S. Li, C. Q. Sun, and P. Chen, “Size dependence of Zn 2p 3∕2 binding energy in nanocrystalline ZnO,” Appl. Phys. Lett. 88(17), 173118 (2006).
[Crossref]

Chen, R.

X. Zhao, W. Liu, R. Chen, Y. Gao, B. Zhu, H. V. Demir, S. Wang, and H. Sun, “Exciton energy recycling from ZnO defect levels: towards electrically driven hybrid quantum-dot white light-emitting-diodes,” Nanoscale 8(11), 5835–5841 (2016).
[Crossref]

Chen, Y.

Chernyak, L.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref]

Chichibu, S. F.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[Crossref]

Chiu, C. H.

T. H. Kao, J. Y. Chen, C. H. Chiu, C. W. Huang, and W. W. Wu, “Opto-electrical properties of Sb-doped p-type ZnO nanowires,” Appl. Phys. Lett. 104(11), 111909 (2014).
[Crossref]

Cho, S. J.

U. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Choi, S.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref]

Chou, L. J.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs made with in situ doped p-n homojunction ZnO nanowire arrays,” Nano Lett. 10(11), 4387–4393 (2010).
[Crossref]

Chu, S.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref]

G. Wang, S. Chu, N. Zhan, H. Zhou, and J. Liu, “Synthesis and Characterization of Ag-doped p-type ZnO Nanowires,” Appl. Phys. A 103(4), 951–954 (2011).
[Crossref]

Coltrin, M. E.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward Smart and Ultra-efficient Solid-State Lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

Crawford, M. H.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward Smart and Ultra-efficient Solid-State Lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

de Castro, S. C.

E. V. Benvenutti, Y. Gushikem, A. Vasquez, S. C. de Castro, and G. A. P. Zaldivar, “X-Ray Photoelectron Spectroscopy and Mössbauer Spectroscopy Study of Iron(III) and Antimony(V) Oxides Grafted onto a Silica Gel Surface,” J. Chem. Soc., Chem. Commun. 19, 1325–1327 (1991).
[Crossref]

Demir, H. V.

X. Zhao, W. Liu, R. Chen, Y. Gao, B. Zhu, H. V. Demir, S. Wang, and H. Sun, “Exciton energy recycling from ZnO defect levels: towards electrically driven hybrid quantum-dot white light-emitting-diodes,” Nanoscale 8(11), 5835–5841 (2016).
[Crossref]

Deng, T.-S.

J.-Y. Zhang, P.-J. Li, H. Sun, X. Shen, T.-S. Deng, K.-T. Zhu, Q.-F. Zhang, and J.-L. Wu, “Ultraviolet Electroluminescence from Controlled Arsenic-doped ZnO Nanowire Homojunctions,” Appl. Phys. Lett. 93(2), 021116 (2008).
[Crossref]

Ding, L. W.

X. L. Ren, X. H. Zhang, N. S. Liu, L. Wen, L. W. Ding, Z. W. Ma, J. Su, L. Y. Li, J. B. Han, and Y. H. Gao, “White Light-Emitting Diode from Sb-Doped p-ZnO Nanowire Arrays/n-GaN Film,” Adv. Funct. Mater. 25(14), 2182–2188 (2015).
[Crossref]

Dogan, S.

U. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Du, G. T.

J. Z. Zhao, H. W. Liang, J. C. Sun, J. M. Bian, Q. J. Feng, L. Z. Hu, H. Q. Zhang, X. P. Liang, Y. M. Luo, and G. T. Du, “Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology,” J. Phys. D: Appl. Phys. 41(19), 195110 (2008).
[Crossref]

Dupuis, R.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref]

Everitt, H. O.

J. G. Reynolds, C. L. Reynolds, A. Mohanta, J. F. Muth, J. E. Rowe, H. O. Everitt, and D. E. Aspnes, “Shallow acceptor complexes in p-type ZnO,” Appl. Phys. Lett. 102(15), 152114 (2013).
[Crossref]

Fan, J. C.

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[Crossref]

Fan, X.

G. D. Yuan, W. J. Zhang, J. S. Jie, X. Fan, J. A. Zapien, Y. H. Leung, L. B. Luo, P. F. Wang, C. S. Lee, and S. T. Lee, “p-type ZnO nanowire arrays,” Nano Lett. 8(8), 2591–2597 (2008).
[Crossref]

Feng, Q.

Q. Feng, H. Liang, Y. Mei, J. Liu, C. C. Ling, P. Tao, D. Pan, and Y. Yang, “ZnO single microwire homojunction light emitting diode grown by electric field assisted chemical vapor deposition,” J. Mater. Chem. C 3(18), 4678–4682 (2015).
[Crossref]

Feng, Q. J.

J. Z. Zhao, H. W. Liang, J. C. Sun, J. M. Bian, Q. J. Feng, L. Z. Hu, H. Q. Zhang, X. P. Liang, Y. M. Luo, and G. T. Du, “Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology,” J. Phys. D: Appl. Phys. 41(19), 195110 (2008).
[Crossref]

Fischer, A. J.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward Smart and Ultra-efficient Solid-State Lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

Fuke, S.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[Crossref]

Gao, J. Y.

P. J. Li, Z. M. Liao, X. Z. Zhang, X. J. Zhang, H. C. Zhu, J. Y. Gao, K. Laurent, Y. Leprince-Wang, N. Wang, and D. P. Yu, “Electrical and photoresponse properties of an intramolecular p-n homojunction in single phosphorus-doped ZnO nanowires,” Nano Lett. 9(7), 2513–2518 (2009).
[Crossref]

Gao, Y.

X. Zhao, W. Liu, R. Chen, Y. Gao, B. Zhu, H. V. Demir, S. Wang, and H. Sun, “Exciton energy recycling from ZnO defect levels: towards electrically driven hybrid quantum-dot white light-emitting-diodes,” Nanoscale 8(11), 5835–5841 (2016).
[Crossref]

X. Zhang, X. Han, J. Su, Q. Zhang, and Y. Gao, “Well Vertically Aligned ZnO Nanowire Arrays with an Ultra-fast Recovery Time for UV Photodetector,” Appl. Phys. A 107(2), 255–260 (2012).
[Crossref]

Gao, Y. H.

Y. M. Wang, Y. B. Han, J. B. Han, X. H. Zhang, Y. Chen, S. L. Wang, L. Wen, N. S. Liu, J. Su, L. Y. Li, and Y. H. Gao, “UV-free red electroluminescence from the cross-connected p-ZnO:Cu nanobushes/n-GaN light emitting diode,” Opt. Express 24(4), 3940–3949 (2016).
[Crossref]

X. L. Ren, X. H. Zhang, N. S. Liu, L. Wen, L. W. Ding, Z. W. Ma, J. Su, L. Y. Li, J. B. Han, and Y. H. Gao, “White Light-Emitting Diode from Sb-Doped p-ZnO Nanowire Arrays/n-GaN Film,” Adv. Funct. Mater. 25(14), 2182–2188 (2015).
[Crossref]

X. H. Zhang, L. Y. Li, J. Su, Y. M. Wang, Y. L. Shi, X. L. Ren, N. S. Liu, A. Q. Zhang, J. Zhou, and Y. H. Gao, “Bandgap engineering of GaxZn1-xO nanowire arrays for wavelength-tunable light-emitting diodes,” Laser Photonics Rev. 8(3), 429–435 (2014).
[Crossref]

Gui, X.

A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium-Assisted p-Type Doping for ZnO Homojunction Light-Emitting Devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
[Crossref]

Gushikem, Y.

E. V. Benvenutti, Y. Gushikem, A. Vasquez, S. C. de Castro, and G. A. P. Zaldivar, “X-Ray Photoelectron Spectroscopy and Mössbauer Spectroscopy Study of Iron(III) and Antimony(V) Oxides Grafted onto a Silica Gel Surface,” J. Chem. Soc., Chem. Commun. 19, 1325–1327 (1991).
[Crossref]

Han, J. B.

Y. M. Wang, Y. B. Han, J. B. Han, X. H. Zhang, Y. Chen, S. L. Wang, L. Wen, N. S. Liu, J. Su, L. Y. Li, and Y. H. Gao, “UV-free red electroluminescence from the cross-connected p-ZnO:Cu nanobushes/n-GaN light emitting diode,” Opt. Express 24(4), 3940–3949 (2016).
[Crossref]

X. L. Ren, X. H. Zhang, N. S. Liu, L. Wen, L. W. Ding, Z. W. Ma, J. Su, L. Y. Li, J. B. Han, and Y. H. Gao, “White Light-Emitting Diode from Sb-Doped p-ZnO Nanowire Arrays/n-GaN Film,” Adv. Funct. Mater. 25(14), 2182–2188 (2015).
[Crossref]

Han, X.

X. Zhang, X. Han, J. Su, Q. Zhang, and Y. Gao, “Well Vertically Aligned ZnO Nanowire Arrays with an Ultra-fast Recovery Time for UV Photodetector,” Appl. Phys. A 107(2), 255–260 (2012).
[Crossref]

Han, Y. B.

He, G.

G. He, M. Jiang, B. Li, Z. Zhang, H. Zhao, C. Shan, and D. Shen, “Sb-Doped ZnO microwires: emitting filament and homojunction light-emitting diodes,” J. Mater. Chem. C 5(42), 10938–10946 (2017).
[Crossref]

Hu, L. Z.

J. Z. Zhao, H. W. Liang, J. C. Sun, J. M. Bian, Q. J. Feng, L. Z. Hu, H. Q. Zhang, X. P. Liang, Y. M. Luo, and G. T. Du, “Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology,” J. Phys. D: Appl. Phys. 41(19), 195110 (2008).
[Crossref]

Hu, Y.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref]

Huang, C. W.

T. H. Kao, J. Y. Chen, C. H. Chiu, C. W. Huang, and W. W. Wu, “Opto-electrical properties of Sb-doped p-type ZnO nanowires,” Appl. Phys. Lett. 104(11), 111909 (2014).
[Crossref]

Hwang, D.-K.

D.-K. Hwang, M.-S. Oh, J.-H. Lim, and S.-J. Park, “ZnO thin films and light-emitting diodes,” J. Phys. D: Appl. Phys. 40(22), R387–R412 (2007).
[Crossref]

Jiang, M.

G. He, M. Jiang, B. Li, Z. Zhang, H. Zhao, C. Shan, and D. Shen, “Sb-Doped ZnO microwires: emitting filament and homojunction light-emitting diodes,” J. Mater. Chem. C 5(42), 10938–10946 (2017).
[Crossref]

Jie, J. S.

G. D. Yuan, W. J. Zhang, J. S. Jie, X. Fan, J. A. Zapien, Y. H. Leung, L. B. Luo, P. F. Wang, C. S. Lee, and S. T. Lee, “p-type ZnO nanowire arrays,” Nano Lett. 8(8), 2591–2597 (2008).
[Crossref]

Kao, T. H.

T. H. Kao, J. Y. Chen, C. H. Chiu, C. W. Huang, and W. W. Wu, “Opto-electrical properties of Sb-doped p-type ZnO nanowires,” Appl. Phys. Lett. 104(11), 111909 (2014).
[Crossref]

Karlicek, R. F.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward Smart and Ultra-efficient Solid-State Lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

Kawasaki, M.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[Crossref]

Kim, H. J.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref]

Kim, J. W.

S. D. Baek, P. Biswas, J. W. Kim, Y. C. Kim, T. I. Lee, and J. M. Myoung, “Low-Temperature Facile Synthesis of Sb-Doped p-Type ZnO Nanodisks and Its Application in Homojunction Light-Emitting Diode,” ACS Appl. Mater. Interfaces 8(20), 13018–13026 (2016).
[Crossref]

Kim, Y. C.

S. D. Baek, P. Biswas, J. W. Kim, Y. C. Kim, T. I. Lee, and J. M. Myoung, “Low-Temperature Facile Synthesis of Sb-Doped p-Type ZnO Nanodisks and Its Application in Homojunction Light-Emitting Diode,” ACS Appl. Mater. Interfaces 8(20), 13018–13026 (2016).
[Crossref]

Koinuma, H.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[Crossref]

Koleske, D. D.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward Smart and Ultra-efficient Solid-State Lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
[Crossref]

Kong, J.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref]

Laurent, K.

P. J. Li, Z. M. Liao, X. Z. Zhang, X. J. Zhang, H. C. Zhu, J. Y. Gao, K. Laurent, Y. Leprince-Wang, N. Wang, and D. P. Yu, “Electrical and photoresponse properties of an intramolecular p-n homojunction in single phosphorus-doped ZnO nanowires,” Nano Lett. 9(7), 2513–2518 (2009).
[Crossref]

Lee, C. S.

G. D. Yuan, W. J. Zhang, J. S. Jie, X. Fan, J. A. Zapien, Y. H. Leung, L. B. Luo, P. F. Wang, C. S. Lee, and S. T. Lee, “p-type ZnO nanowire arrays,” Nano Lett. 8(8), 2591–2597 (2008).
[Crossref]

Lee, C. Y.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs made with in situ doped p-n homojunction ZnO nanowire arrays,” Nano Lett. 10(11), 4387–4393 (2010).
[Crossref]

Lee, S. T.

G. D. Yuan, W. J. Zhang, J. S. Jie, X. Fan, J. A. Zapien, Y. H. Leung, L. B. Luo, P. F. Wang, C. S. Lee, and S. T. Lee, “p-type ZnO nanowire arrays,” Nano Lett. 8(8), 2591–2597 (2008).
[Crossref]

Lee, T. I.

S. D. Baek, P. Biswas, J. W. Kim, Y. C. Kim, T. I. Lee, and J. M. Myoung, “Low-Temperature Facile Synthesis of Sb-Doped p-Type ZnO Nanodisks and Its Application in Homojunction Light-Emitting Diode,” ACS Appl. Mater. Interfaces 8(20), 13018–13026 (2016).
[Crossref]

Leprince-Wang, Y.

P. J. Li, Z. M. Liao, X. Z. Zhang, X. J. Zhang, H. C. Zhu, J. Y. Gao, K. Laurent, Y. Leprince-Wang, N. Wang, and D. P. Yu, “Electrical and photoresponse properties of an intramolecular p-n homojunction in single phosphorus-doped ZnO nanowires,” Nano Lett. 9(7), 2513–2518 (2009).
[Crossref]

Leung, Y. H.

G. D. Yuan, W. J. Zhang, J. S. Jie, X. Fan, J. A. Zapien, Y. H. Leung, L. B. Luo, P. F. Wang, C. S. Lee, and S. T. Lee, “p-type ZnO nanowire arrays,” Nano Lett. 8(8), 2591–2597 (2008).
[Crossref]

Li, B.

G. He, M. Jiang, B. Li, Z. Zhang, H. Zhao, C. Shan, and D. Shen, “Sb-Doped ZnO microwires: emitting filament and homojunction light-emitting diodes,” J. Mater. Chem. C 5(42), 10938–10946 (2017).
[Crossref]

Li, L.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref]

Li, L. Y.

Y. M. Wang, Y. B. Han, J. B. Han, X. H. Zhang, Y. Chen, S. L. Wang, L. Wen, N. S. Liu, J. Su, L. Y. Li, and Y. H. Gao, “UV-free red electroluminescence from the cross-connected p-ZnO:Cu nanobushes/n-GaN light emitting diode,” Opt. Express 24(4), 3940–3949 (2016).
[Crossref]

X. L. Ren, X. H. Zhang, N. S. Liu, L. Wen, L. W. Ding, Z. W. Ma, J. Su, L. Y. Li, J. B. Han, and Y. H. Gao, “White Light-Emitting Diode from Sb-Doped p-ZnO Nanowire Arrays/n-GaN Film,” Adv. Funct. Mater. 25(14), 2182–2188 (2015).
[Crossref]

X. H. Zhang, L. Y. Li, J. Su, Y. M. Wang, Y. L. Shi, X. L. Ren, N. S. Liu, A. Q. Zhang, J. Zhou, and Y. H. Gao, “Bandgap engineering of GaxZn1-xO nanowire arrays for wavelength-tunable light-emitting diodes,” Laser Photonics Rev. 8(3), 429–435 (2014).
[Crossref]

Li, P. J.

P. J. Li, Z. M. Liao, X. Z. Zhang, X. J. Zhang, H. C. Zhu, J. Y. Gao, K. Laurent, Y. Leprince-Wang, N. Wang, and D. P. Yu, “Electrical and photoresponse properties of an intramolecular p-n homojunction in single phosphorus-doped ZnO nanowires,” Nano Lett. 9(7), 2513–2518 (2009).
[Crossref]

Li, P.-J.

J.-Y. Zhang, P.-J. Li, H. Sun, X. Shen, T.-S. Deng, K.-T. Zhu, Q.-F. Zhang, and J.-L. Wu, “Ultraviolet Electroluminescence from Controlled Arsenic-doped ZnO Nanowire Homojunctions,” Appl. Phys. Lett. 93(2), 021116 (2008).
[Crossref]

Li, S.

Y. Y. Tay, S. Li, C. Q. Sun, and P. Chen, “Size dependence of Zn 2p 3∕2 binding energy in nanocrystalline ZnO,” Appl. Phys. Lett. 88(17), 173118 (2006).
[Crossref]

Liang, H.

Q. Feng, H. Liang, Y. Mei, J. Liu, C. C. Ling, P. Tao, D. Pan, and Y. Yang, “ZnO single microwire homojunction light emitting diode grown by electric field assisted chemical vapor deposition,” J. Mater. Chem. C 3(18), 4678–4682 (2015).
[Crossref]

Liang, H. W.

J. Z. Zhao, H. W. Liang, J. C. Sun, J. M. Bian, Q. J. Feng, L. Z. Hu, H. Q. Zhang, X. P. Liang, Y. M. Luo, and G. T. Du, “Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology,” J. Phys. D: Appl. Phys. 41(19), 195110 (2008).
[Crossref]

Liang, X. P.

J. Z. Zhao, H. W. Liang, J. C. Sun, J. M. Bian, Q. J. Feng, L. Z. Hu, H. Q. Zhang, X. P. Liang, Y. M. Luo, and G. T. Du, “Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology,” J. Phys. D: Appl. Phys. 41(19), 195110 (2008).
[Crossref]

Liao, Z. M.

P. J. Li, Z. M. Liao, X. Z. Zhang, X. J. Zhang, H. C. Zhu, J. Y. Gao, K. Laurent, Y. Leprince-Wang, N. Wang, and D. P. Yu, “Electrical and photoresponse properties of an intramolecular p-n homojunction in single phosphorus-doped ZnO nanowires,” Nano Lett. 9(7), 2513–2518 (2009).
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D.-K. Hwang, M.-S. Oh, J.-H. Lim, and S.-J. Park, “ZnO thin films and light-emitting diodes,” J. Phys. D: Appl. Phys. 40(22), R387–R412 (2007).
[Crossref]

Lin, Y.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref]

Ling, C. C.

Q. Feng, H. Liang, Y. Mei, J. Liu, C. C. Ling, P. Tao, D. Pan, and Y. Yang, “ZnO single microwire homojunction light emitting diode grown by electric field assisted chemical vapor deposition,” J. Mater. Chem. C 3(18), 4678–4682 (2015).
[Crossref]

Liu, C.

U. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Liu, J.

Q. Feng, H. Liang, Y. Mei, J. Liu, C. C. Ling, P. Tao, D. Pan, and Y. Yang, “ZnO single microwire homojunction light emitting diode grown by electric field assisted chemical vapor deposition,” J. Mater. Chem. C 3(18), 4678–4682 (2015).
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G. Wang, S. Chu, N. Zhan, H. Zhou, and J. Liu, “Synthesis and Characterization of Ag-doped p-type ZnO Nanowires,” Appl. Phys. A 103(4), 951–954 (2011).
[Crossref]

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref]

W. Liu, F. Xiu, K. Sun, Y. H. Xie, K. L. Wang, Y. Wang, J. Zou, Z. Yang, and J. Liu, “Na-doped p-type ZnO Microwires,” J. Am. Chem. Soc. 132(8), 2498–2499 (2010).
[Crossref]

Liu, J. L.

F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. Liu, “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy,” Appl. Phys. Lett. 87(25), 252102 (2005).
[Crossref]

Liu, N. S.

Y. M. Wang, Y. B. Han, J. B. Han, X. H. Zhang, Y. Chen, S. L. Wang, L. Wen, N. S. Liu, J. Su, L. Y. Li, and Y. H. Gao, “UV-free red electroluminescence from the cross-connected p-ZnO:Cu nanobushes/n-GaN light emitting diode,” Opt. Express 24(4), 3940–3949 (2016).
[Crossref]

X. L. Ren, X. H. Zhang, N. S. Liu, L. Wen, L. W. Ding, Z. W. Ma, J. Su, L. Y. Li, J. B. Han, and Y. H. Gao, “White Light-Emitting Diode from Sb-Doped p-ZnO Nanowire Arrays/n-GaN Film,” Adv. Funct. Mater. 25(14), 2182–2188 (2015).
[Crossref]

X. H. Zhang, L. Y. Li, J. Su, Y. M. Wang, Y. L. Shi, X. L. Ren, N. S. Liu, A. Q. Zhang, J. Zhou, and Y. H. Gao, “Bandgap engineering of GaxZn1-xO nanowire arrays for wavelength-tunable light-emitting diodes,” Laser Photonics Rev. 8(3), 429–435 (2014).
[Crossref]

Liu, W.

X. Zhao, W. Liu, R. Chen, Y. Gao, B. Zhu, H. V. Demir, S. Wang, and H. Sun, “Exciton energy recycling from ZnO defect levels: towards electrically driven hybrid quantum-dot white light-emitting-diodes,” Nanoscale 8(11), 5835–5841 (2016).
[Crossref]

W. Liu, F. Xiu, K. Sun, Y. H. Xie, K. L. Wang, Y. Wang, J. Zou, Z. Yang, and J. Liu, “Na-doped p-type ZnO Microwires,” J. Am. Chem. Soc. 132(8), 2498–2499 (2010).
[Crossref]

Liu, Y.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
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Lochner, Z.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
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Lu, M. P.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs made with in situ doped p-n homojunction ZnO nanowire arrays,” Nano Lett. 10(11), 4387–4393 (2010).
[Crossref]

Lu, M. Y.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs made with in situ doped p-n homojunction ZnO nanowire arrays,” Nano Lett. 10(11), 4387–4393 (2010).
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Lu, M.-P.

M.-P. Lu, M.-Y. Lu, and L.-J. Chen, “p-Type ZnO nanowires: From synthesis to nanoenergy,” Nano Energy 1(2), 247–258 (2012).
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Lu, M.-Y.

M.-P. Lu, M.-Y. Lu, and L.-J. Chen, “p-Type ZnO nanowires: From synthesis to nanoenergy,” Nano Energy 1(2), 247–258 (2012).
[Crossref]

X.-M. Zhang, M.-Y. Lu, Y. Zhang, L.-J. Chen, and Z. L. Wang, “Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
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Luo, L. B.

G. D. Yuan, W. J. Zhang, J. S. Jie, X. Fan, J. A. Zapien, Y. H. Leung, L. B. Luo, P. F. Wang, C. S. Lee, and S. T. Lee, “p-type ZnO nanowire arrays,” Nano Lett. 8(8), 2591–2597 (2008).
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Luo, Y. M.

J. Z. Zhao, H. W. Liang, J. C. Sun, J. M. Bian, Q. J. Feng, L. Z. Hu, H. Q. Zhang, X. P. Liang, Y. M. Luo, and G. T. Du, “Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology,” J. Phys. D: Appl. Phys. 41(19), 195110 (2008).
[Crossref]

Lupan, O.

O. Lupan, T. Pauporte, and B. Viana, “Low-Voltage UV-Electroluminescence from ZnO-Nanowire Array/p-GaN Light-Emitting Diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[Crossref]

Ma, Z.

F. Wang, J. H. Seo, D. Bayerl, J. Shi, H. Mi, Z. Ma, D. Zhao, Y. Shuai, W. Zhou, and X. Wang, “An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires,” Nanotechnology 22(22), 225602 (2011).
[Crossref]

Ma, Z. W.

X. L. Ren, X. H. Zhang, N. S. Liu, L. Wen, L. W. Ding, Z. W. Ma, J. Su, L. Y. Li, J. B. Han, and Y. H. Gao, “White Light-Emitting Diode from Sb-Doped p-ZnO Nanowire Arrays/n-GaN Film,” Adv. Funct. Mater. 25(14), 2182–2188 (2015).
[Crossref]

Makino, T.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[Crossref]

Mandalapu, L. J.

F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. Liu, “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy,” Appl. Phys. Lett. 87(25), 252102 (2005).
[Crossref]

Mei, Y.

Q. Feng, H. Liang, Y. Mei, J. Liu, C. C. Ling, P. Tao, D. Pan, and Y. Yang, “ZnO single microwire homojunction light emitting diode grown by electric field assisted chemical vapor deposition,” J. Mater. Chem. C 3(18), 4678–4682 (2015).
[Crossref]

Mi, H.

F. Wang, J. H. Seo, D. Bayerl, J. Shi, H. Mi, Z. Ma, D. Zhao, Y. Shuai, W. Zhou, and X. Wang, “An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires,” Nanotechnology 22(22), 225602 (2011).
[Crossref]

Mohanta, A.

J. G. Reynolds, C. L. Reynolds, A. Mohanta, J. F. Muth, J. E. Rowe, H. O. Everitt, and D. E. Aspnes, “Shallow acceptor complexes in p-type ZnO,” Appl. Phys. Lett. 102(15), 152114 (2013).
[Crossref]

Morkoç, H.

U. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Muth, J. F.

J. G. Reynolds, C. L. Reynolds, A. Mohanta, J. F. Muth, J. E. Rowe, H. O. Everitt, and D. E. Aspnes, “Shallow acceptor complexes in p-type ZnO,” Appl. Phys. Lett. 102(15), 152114 (2013).
[Crossref]

Myoung, J. M.

S. D. Baek, P. Biswas, J. W. Kim, Y. C. Kim, T. I. Lee, and J. M. Myoung, “Low-Temperature Facile Synthesis of Sb-Doped p-Type ZnO Nanodisks and Its Application in Homojunction Light-Emitting Diode,” ACS Appl. Mater. Interfaces 8(20), 13018–13026 (2016).
[Crossref]

Oh, M.-S.

D.-K. Hwang, M.-S. Oh, J.-H. Lim, and S.-J. Park, “ZnO thin films and light-emitting diodes,” J. Phys. D: Appl. Phys. 40(22), R387–R412 (2007).
[Crossref]

Ohno, H.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[Crossref]

Ohtani, K.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[Crossref]

Ohtani, M.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[Crossref]

Ohtomo, A.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[Crossref]

Onuma, T.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[Crossref]

Özgür, U.

U. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Pan, D.

Q. Feng, H. Liang, Y. Mei, J. Liu, C. C. Ling, P. Tao, D. Pan, and Y. Yang, “ZnO single microwire homojunction light emitting diode grown by electric field assisted chemical vapor deposition,” J. Mater. Chem. C 3(18), 4678–4682 (2015).
[Crossref]

Panda, D.

D. Panda and T.-Y. Tseng, “One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications,” J. Mater. Sci. 48(20), 6849–6877 (2013).
[Crossref]

Park, S.-J.

D.-K. Hwang, M.-S. Oh, J.-H. Lim, and S.-J. Park, “ZnO thin films and light-emitting diodes,” J. Phys. D: Appl. Phys. 40(22), R387–R412 (2007).
[Crossref]

Park, W. I.

W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
[Crossref]

Pauporte, T.

O. Lupan, T. Pauporte, and B. Viana, “Low-Voltage UV-Electroluminescence from ZnO-Nanowire Array/p-GaN Light-Emitting Diodes,” Adv. Mater. 22(30), 3298–3302 (2010).
[Crossref]

Rao, K. V.

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[Crossref]

Ren, J.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref]

Ren, X. L.

X. L. Ren, X. H. Zhang, N. S. Liu, L. Wen, L. W. Ding, Z. W. Ma, J. Su, L. Y. Li, J. B. Han, and Y. H. Gao, “White Light-Emitting Diode from Sb-Doped p-ZnO Nanowire Arrays/n-GaN Film,” Adv. Funct. Mater. 25(14), 2182–2188 (2015).
[Crossref]

X. H. Zhang, L. Y. Li, J. Su, Y. M. Wang, Y. L. Shi, X. L. Ren, N. S. Liu, A. Q. Zhang, J. Zhou, and Y. H. Gao, “Bandgap engineering of GaxZn1-xO nanowire arrays for wavelength-tunable light-emitting diodes,” Laser Photonics Rev. 8(3), 429–435 (2014).
[Crossref]

Reshchikov, M. A.

U. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Reynolds, C. L.

J. G. Reynolds, C. L. Reynolds, A. Mohanta, J. F. Muth, J. E. Rowe, H. O. Everitt, and D. E. Aspnes, “Shallow acceptor complexes in p-type ZnO,” Appl. Phys. Lett. 102(15), 152114 (2013).
[Crossref]

Reynolds, J. G.

J. G. Reynolds, C. L. Reynolds, A. Mohanta, J. F. Muth, J. E. Rowe, H. O. Everitt, and D. E. Aspnes, “Shallow acceptor complexes in p-type ZnO,” Appl. Phys. Lett. 102(15), 152114 (2013).
[Crossref]

Rowe, J. E.

J. G. Reynolds, C. L. Reynolds, A. Mohanta, J. F. Muth, J. E. Rowe, H. O. Everitt, and D. E. Aspnes, “Shallow acceptor complexes in p-type ZnO,” Appl. Phys. Lett. 102(15), 152114 (2013).
[Crossref]

Ryou, J. H.

S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref]

Segawa, Y.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[Crossref]

Seo, J. H.

F. Wang, J. H. Seo, D. Bayerl, J. Shi, H. Mi, Z. Ma, D. Zhao, Y. Shuai, W. Zhou, and X. Wang, “An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires,” Nanotechnology 22(22), 225602 (2011).
[Crossref]

Shan, C.

G. He, M. Jiang, B. Li, Z. Zhang, H. Zhao, C. Shan, and D. Shen, “Sb-Doped ZnO microwires: emitting filament and homojunction light-emitting diodes,” J. Mater. Chem. C 5(42), 10938–10946 (2017).
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Shen, D.

G. He, M. Jiang, B. Li, Z. Zhang, H. Zhao, C. Shan, and D. Shen, “Sb-Doped ZnO microwires: emitting filament and homojunction light-emitting diodes,” J. Mater. Chem. C 5(42), 10938–10946 (2017).
[Crossref]

Shen, X.

J.-Y. Zhang, P.-J. Li, H. Sun, X. Shen, T.-S. Deng, K.-T. Zhu, Q.-F. Zhang, and J.-L. Wu, “Ultraviolet Electroluminescence from Controlled Arsenic-doped ZnO Nanowire Homojunctions,” Appl. Phys. Lett. 93(2), 021116 (2008).
[Crossref]

Shi, J.

F. Wang, J. H. Seo, D. Bayerl, J. Shi, H. Mi, Z. Ma, D. Zhao, Y. Shuai, W. Zhou, and X. Wang, “An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires,” Nanotechnology 22(22), 225602 (2011).
[Crossref]

Shi, Y. L.

X. H. Zhang, L. Y. Li, J. Su, Y. M. Wang, Y. L. Shi, X. L. Ren, N. S. Liu, A. Q. Zhang, J. Zhou, and Y. H. Gao, “Bandgap engineering of GaxZn1-xO nanowire arrays for wavelength-tunable light-emitting diodes,” Laser Photonics Rev. 8(3), 429–435 (2014).
[Crossref]

Shuai, Y.

F. Wang, J. H. Seo, D. Bayerl, J. Shi, H. Mi, Z. Ma, D. Zhao, Y. Shuai, W. Zhou, and X. Wang, “An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires,” Nanotechnology 22(22), 225602 (2011).
[Crossref]

Song, J.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs made with in situ doped p-n homojunction ZnO nanowire arrays,” Nano Lett. 10(11), 4387–4393 (2010).
[Crossref]

Sreekanth, K. M.

J. C. Fan, K. M. Sreekanth, Z. Xie, S. L. Chang, and K. V. Rao, “p-Type ZnO materials: Theory, growth, properties and devices,” Prog. Mater. Sci. 58(6), 874–985 (2013).
[Crossref]

Su, J.

Y. M. Wang, Y. B. Han, J. B. Han, X. H. Zhang, Y. Chen, S. L. Wang, L. Wen, N. S. Liu, J. Su, L. Y. Li, and Y. H. Gao, “UV-free red electroluminescence from the cross-connected p-ZnO:Cu nanobushes/n-GaN light emitting diode,” Opt. Express 24(4), 3940–3949 (2016).
[Crossref]

X. L. Ren, X. H. Zhang, N. S. Liu, L. Wen, L. W. Ding, Z. W. Ma, J. Su, L. Y. Li, J. B. Han, and Y. H. Gao, “White Light-Emitting Diode from Sb-Doped p-ZnO Nanowire Arrays/n-GaN Film,” Adv. Funct. Mater. 25(14), 2182–2188 (2015).
[Crossref]

X. H. Zhang, L. Y. Li, J. Su, Y. M. Wang, Y. L. Shi, X. L. Ren, N. S. Liu, A. Q. Zhang, J. Zhou, and Y. H. Gao, “Bandgap engineering of GaxZn1-xO nanowire arrays for wavelength-tunable light-emitting diodes,” Laser Photonics Rev. 8(3), 429–435 (2014).
[Crossref]

X. Zhang, X. Han, J. Su, Q. Zhang, and Y. Gao, “Well Vertically Aligned ZnO Nanowire Arrays with an Ultra-fast Recovery Time for UV Photodetector,” Appl. Phys. A 107(2), 255–260 (2012).
[Crossref]

Subramania, G. S.

J. Y. Tsao, M. H. Crawford, M. E. Coltrin, A. J. Fischer, D. D. Koleske, G. S. Subramania, G. T. Wang, J. J. Wierer, and R. F. Karlicek, “Toward Smart and Ultra-efficient Solid-State Lighting,” Adv. Opt. Mater. 2(9), 809–836 (2014).
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Sumiya, M.

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2004).
[Crossref]

Sun, C. Q.

Y. Y. Tay, S. Li, C. Q. Sun, and P. Chen, “Size dependence of Zn 2p 3∕2 binding energy in nanocrystalline ZnO,” Appl. Phys. Lett. 88(17), 173118 (2006).
[Crossref]

Sun, H.

X. Zhao, W. Liu, R. Chen, Y. Gao, B. Zhu, H. V. Demir, S. Wang, and H. Sun, “Exciton energy recycling from ZnO defect levels: towards electrically driven hybrid quantum-dot white light-emitting-diodes,” Nanoscale 8(11), 5835–5841 (2016).
[Crossref]

J.-Y. Zhang, P.-J. Li, H. Sun, X. Shen, T.-S. Deng, K.-T. Zhu, Q.-F. Zhang, and J.-L. Wu, “Ultraviolet Electroluminescence from Controlled Arsenic-doped ZnO Nanowire Homojunctions,” Appl. Phys. Lett. 93(2), 021116 (2008).
[Crossref]

Sun, J. C.

J. Z. Zhao, H. W. Liang, J. C. Sun, J. M. Bian, Q. J. Feng, L. Z. Hu, H. Q. Zhang, X. P. Liang, Y. M. Luo, and G. T. Du, “Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology,” J. Phys. D: Appl. Phys. 41(19), 195110 (2008).
[Crossref]

Sun, K.

W. Liu, F. Xiu, K. Sun, Y. H. Xie, K. L. Wang, Y. Wang, J. Zou, Z. Yang, and J. Liu, “Na-doped p-type ZnO Microwires,” J. Am. Chem. Soc. 132(8), 2498–2499 (2010).
[Crossref]

Sun, X. W.

Y. Yang, X. W. Sun, B. K. Tay, G. F. You, S. T. Tan, and K. L. Teo, “A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation,” Appl. Phys. Lett. 93(25), 253107 (2008).
[Crossref]

Tan, S. T.

Y. Yang, X. W. Sun, B. K. Tay, G. F. You, S. T. Tan, and K. L. Teo, “A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation,” Appl. Phys. Lett. 93(25), 253107 (2008).
[Crossref]

Tang, Z.

A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium-Assisted p-Type Doping for ZnO Homojunction Light-Emitting Devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
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S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
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X. Zhao, W. Liu, R. Chen, Y. Gao, B. Zhu, H. V. Demir, S. Wang, and H. Sun, “Exciton energy recycling from ZnO defect levels: towards electrically driven hybrid quantum-dot white light-emitting-diodes,” Nanoscale 8(11), 5835–5841 (2016).
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X. H. Zhang, L. Y. Li, J. Su, Y. M. Wang, Y. L. Shi, X. L. Ren, N. S. Liu, A. Q. Zhang, J. Zhou, and Y. H. Gao, “Bandgap engineering of GaxZn1-xO nanowire arrays for wavelength-tunable light-emitting diodes,” Laser Photonics Rev. 8(3), 429–435 (2014).
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[Crossref]

X. L. Ren, X. H. Zhang, N. S. Liu, L. Wen, L. W. Ding, Z. W. Ma, J. Su, L. Y. Li, J. B. Han, and Y. H. Gao, “White Light-Emitting Diode from Sb-Doped p-ZnO Nanowire Arrays/n-GaN Film,” Adv. Funct. Mater. 25(14), 2182–2188 (2015).
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Wu, J.-L.

J.-Y. Zhang, P.-J. Li, H. Sun, X. Shen, T.-S. Deng, K.-T. Zhu, Q.-F. Zhang, and J.-L. Wu, “Ultraviolet Electroluminescence from Controlled Arsenic-doped ZnO Nanowire Homojunctions,” Appl. Phys. Lett. 93(2), 021116 (2008).
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T. H. Kao, J. Y. Chen, C. H. Chiu, C. W. Huang, and W. W. Wu, “Opto-electrical properties of Sb-doped p-type ZnO nanowires,” Appl. Phys. Lett. 104(11), 111909 (2014).
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A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium-Assisted p-Type Doping for ZnO Homojunction Light-Emitting Devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
[Crossref]

Wu, Y. J.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs made with in situ doped p-n homojunction ZnO nanowire arrays,” Nano Lett. 10(11), 4387–4393 (2010).
[Crossref]

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W. Liu, F. Xiu, K. Sun, Y. H. Xie, K. L. Wang, Y. Wang, J. Zou, Z. Yang, and J. Liu, “Na-doped p-type ZnO Microwires,” J. Am. Chem. Soc. 132(8), 2498–2499 (2010).
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F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. Liu, “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy,” Appl. Phys. Lett. 87(25), 252102 (2005).
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S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref]

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S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
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S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref]

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S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, R. Dupuis, and Z. L. Wang, “Ordered nanowire array blue/near-UV light emitting diodes,” Adv. Mater. 22(42), 4749–4753 (2010).
[Crossref]

Yang, Y.

Q. Feng, H. Liang, Y. Mei, J. Liu, C. C. Ling, P. Tao, D. Pan, and Y. Yang, “ZnO single microwire homojunction light emitting diode grown by electric field assisted chemical vapor deposition,” J. Mater. Chem. C 3(18), 4678–4682 (2015).
[Crossref]

Y. Yang, X. W. Sun, B. K. Tay, G. F. You, S. T. Tan, and K. L. Teo, “A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation,” Appl. Phys. Lett. 93(25), 253107 (2008).
[Crossref]

Yang, Z.

W. Liu, F. Xiu, K. Sun, Y. H. Xie, K. L. Wang, Y. Wang, J. Zou, Z. Yang, and J. Liu, “Na-doped p-type ZnO Microwires,” J. Am. Chem. Soc. 132(8), 2498–2499 (2010).
[Crossref]

F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. Liu, “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy,” Appl. Phys. Lett. 87(25), 252102 (2005).
[Crossref]

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W. I. Park and G. C. Yi, “Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN,” Adv. Mater. 16(1), 87–90 (2004).
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Y. Yang, X. W. Sun, B. K. Tay, G. F. You, S. T. Tan, and K. L. Teo, “A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation,” Appl. Phys. Lett. 93(25), 253107 (2008).
[Crossref]

Yu, D. P.

P. J. Li, Z. M. Liao, X. Z. Zhang, X. J. Zhang, H. C. Zhu, J. Y. Gao, K. Laurent, Y. Leprince-Wang, N. Wang, and D. P. Yu, “Electrical and photoresponse properties of an intramolecular p-n homojunction in single phosphorus-doped ZnO nanowires,” Nano Lett. 9(7), 2513–2518 (2009).
[Crossref]

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G. D. Yuan, W. J. Zhang, J. S. Jie, X. Fan, J. A. Zapien, Y. H. Leung, L. B. Luo, P. F. Wang, C. S. Lee, and S. T. Lee, “p-type ZnO nanowire arrays,” Nano Lett. 8(8), 2591–2597 (2008).
[Crossref]

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E. V. Benvenutti, Y. Gushikem, A. Vasquez, S. C. de Castro, and G. A. P. Zaldivar, “X-Ray Photoelectron Spectroscopy and Mössbauer Spectroscopy Study of Iron(III) and Antimony(V) Oxides Grafted onto a Silica Gel Surface,” J. Chem. Soc., Chem. Commun. 19, 1325–1327 (1991).
[Crossref]

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G. D. Yuan, W. J. Zhang, J. S. Jie, X. Fan, J. A. Zapien, Y. H. Leung, L. B. Luo, P. F. Wang, C. S. Lee, and S. T. Lee, “p-type ZnO nanowire arrays,” Nano Lett. 8(8), 2591–2597 (2008).
[Crossref]

Zhan, N.

G. Wang, S. Chu, N. Zhan, H. Zhou, and J. Liu, “Synthesis and Characterization of Ag-doped p-type ZnO Nanowires,” Appl. Phys. A 103(4), 951–954 (2011).
[Crossref]

Zhang, A. Q.

X. H. Zhang, L. Y. Li, J. Su, Y. M. Wang, Y. L. Shi, X. L. Ren, N. S. Liu, A. Q. Zhang, J. Zhou, and Y. H. Gao, “Bandgap engineering of GaxZn1-xO nanowire arrays for wavelength-tunable light-emitting diodes,” Laser Photonics Rev. 8(3), 429–435 (2014).
[Crossref]

Zhang, H. Q.

J. Z. Zhao, H. W. Liang, J. C. Sun, J. M. Bian, Q. J. Feng, L. Z. Hu, H. Q. Zhang, X. P. Liang, Y. M. Luo, and G. T. Du, “Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology,” J. Phys. D: Appl. Phys. 41(19), 195110 (2008).
[Crossref]

Zhang, J.-Y.

J.-Y. Zhang, P.-J. Li, H. Sun, X. Shen, T.-S. Deng, K.-T. Zhu, Q.-F. Zhang, and J.-L. Wu, “Ultraviolet Electroluminescence from Controlled Arsenic-doped ZnO Nanowire Homojunctions,” Appl. Phys. Lett. 93(2), 021116 (2008).
[Crossref]

Zhang, Q.

X. Zhang, X. Han, J. Su, Q. Zhang, and Y. Gao, “Well Vertically Aligned ZnO Nanowire Arrays with an Ultra-fast Recovery Time for UV Photodetector,” Appl. Phys. A 107(2), 255–260 (2012).
[Crossref]

Zhang, Q.-F.

J.-Y. Zhang, P.-J. Li, H. Sun, X. Shen, T.-S. Deng, K.-T. Zhu, Q.-F. Zhang, and J.-L. Wu, “Ultraviolet Electroluminescence from Controlled Arsenic-doped ZnO Nanowire Homojunctions,” Appl. Phys. Lett. 93(2), 021116 (2008).
[Crossref]

Zhang, W. J.

G. D. Yuan, W. J. Zhang, J. S. Jie, X. Fan, J. A. Zapien, Y. H. Leung, L. B. Luo, P. F. Wang, C. S. Lee, and S. T. Lee, “p-type ZnO nanowire arrays,” Nano Lett. 8(8), 2591–2597 (2008).
[Crossref]

Zhang, X.

X. Zhang, X. Han, J. Su, Q. Zhang, and Y. Gao, “Well Vertically Aligned ZnO Nanowire Arrays with an Ultra-fast Recovery Time for UV Photodetector,” Appl. Phys. A 107(2), 255–260 (2012).
[Crossref]

Zhang, X. H.

Y. M. Wang, Y. B. Han, J. B. Han, X. H. Zhang, Y. Chen, S. L. Wang, L. Wen, N. S. Liu, J. Su, L. Y. Li, and Y. H. Gao, “UV-free red electroluminescence from the cross-connected p-ZnO:Cu nanobushes/n-GaN light emitting diode,” Opt. Express 24(4), 3940–3949 (2016).
[Crossref]

X. L. Ren, X. H. Zhang, N. S. Liu, L. Wen, L. W. Ding, Z. W. Ma, J. Su, L. Y. Li, J. B. Han, and Y. H. Gao, “White Light-Emitting Diode from Sb-Doped p-ZnO Nanowire Arrays/n-GaN Film,” Adv. Funct. Mater. 25(14), 2182–2188 (2015).
[Crossref]

X. H. Zhang, L. Y. Li, J. Su, Y. M. Wang, Y. L. Shi, X. L. Ren, N. S. Liu, A. Q. Zhang, J. Zhou, and Y. H. Gao, “Bandgap engineering of GaxZn1-xO nanowire arrays for wavelength-tunable light-emitting diodes,” Laser Photonics Rev. 8(3), 429–435 (2014).
[Crossref]

Zhang, X. J.

P. J. Li, Z. M. Liao, X. Z. Zhang, X. J. Zhang, H. C. Zhu, J. Y. Gao, K. Laurent, Y. Leprince-Wang, N. Wang, and D. P. Yu, “Electrical and photoresponse properties of an intramolecular p-n homojunction in single phosphorus-doped ZnO nanowires,” Nano Lett. 9(7), 2513–2518 (2009).
[Crossref]

Zhang, X. Z.

P. J. Li, Z. M. Liao, X. Z. Zhang, X. J. Zhang, H. C. Zhu, J. Y. Gao, K. Laurent, Y. Leprince-Wang, N. Wang, and D. P. Yu, “Electrical and photoresponse properties of an intramolecular p-n homojunction in single phosphorus-doped ZnO nanowires,” Nano Lett. 9(7), 2513–2518 (2009).
[Crossref]

Zhang, X.-M.

X.-M. Zhang, M.-Y. Lu, Y. Zhang, L.-J. Chen, and Z. L. Wang, “Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Zhang, Y.

X.-M. Zhang, M.-Y. Lu, Y. Zhang, L.-J. Chen, and Z. L. Wang, “Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film,” Adv. Mater. 21(27), 2767–2770 (2009).
[Crossref]

Zhang, Z.

G. He, M. Jiang, B. Li, Z. Zhang, H. Zhao, C. Shan, and D. Shen, “Sb-Doped ZnO microwires: emitting filament and homojunction light-emitting diodes,” J. Mater. Chem. C 5(42), 10938–10946 (2017).
[Crossref]

Zhao, D.

F. Wang, J. H. Seo, D. Bayerl, J. Shi, H. Mi, Z. Ma, D. Zhao, Y. Shuai, W. Zhou, and X. Wang, “An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires,” Nanotechnology 22(22), 225602 (2011).
[Crossref]

Zhao, D. T.

F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. Liu, “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy,” Appl. Phys. Lett. 87(25), 252102 (2005).
[Crossref]

Zhao, H.

G. He, M. Jiang, B. Li, Z. Zhang, H. Zhao, C. Shan, and D. Shen, “Sb-Doped ZnO microwires: emitting filament and homojunction light-emitting diodes,” J. Mater. Chem. C 5(42), 10938–10946 (2017).
[Crossref]

Zhao, J.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref]

Zhao, J. Z.

J. Z. Zhao, H. W. Liang, J. C. Sun, J. M. Bian, Q. J. Feng, L. Z. Hu, H. Q. Zhang, X. P. Liang, Y. M. Luo, and G. T. Du, “Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology,” J. Phys. D: Appl. Phys. 41(19), 195110 (2008).
[Crossref]

Zhao, X.

X. Zhao, W. Liu, R. Chen, Y. Gao, B. Zhu, H. V. Demir, S. Wang, and H. Sun, “Exciton energy recycling from ZnO defect levels: towards electrically driven hybrid quantum-dot white light-emitting-diodes,” Nanoscale 8(11), 5835–5841 (2016).
[Crossref]

Zhou, H.

G. Wang, S. Chu, N. Zhan, H. Zhou, and J. Liu, “Synthesis and Characterization of Ag-doped p-type ZnO Nanowires,” Appl. Phys. A 103(4), 951–954 (2011).
[Crossref]

Zhou, J.

X. H. Zhang, L. Y. Li, J. Su, Y. M. Wang, Y. L. Shi, X. L. Ren, N. S. Liu, A. Q. Zhang, J. Zhou, and Y. H. Gao, “Bandgap engineering of GaxZn1-xO nanowire arrays for wavelength-tunable light-emitting diodes,” Laser Photonics Rev. 8(3), 429–435 (2014).
[Crossref]

Zhou, W.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
[Crossref]

F. Wang, J. H. Seo, D. Bayerl, J. Shi, H. Mi, Z. Ma, D. Zhao, Y. Shuai, W. Zhou, and X. Wang, “An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires,” Nanotechnology 22(22), 225602 (2011).
[Crossref]

Zhu, B.

X. Zhao, W. Liu, R. Chen, Y. Gao, B. Zhu, H. V. Demir, S. Wang, and H. Sun, “Exciton energy recycling from ZnO defect levels: towards electrically driven hybrid quantum-dot white light-emitting-diodes,” Nanoscale 8(11), 5835–5841 (2016).
[Crossref]

Zhu, H.

A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium-Assisted p-Type Doping for ZnO Homojunction Light-Emitting Devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
[Crossref]

Zhu, H. C.

P. J. Li, Z. M. Liao, X. Z. Zhang, X. J. Zhang, H. C. Zhu, J. Y. Gao, K. Laurent, Y. Leprince-Wang, N. Wang, and D. P. Yu, “Electrical and photoresponse properties of an intramolecular p-n homojunction in single phosphorus-doped ZnO nanowires,” Nano Lett. 9(7), 2513–2518 (2009).
[Crossref]

Zhu, K.-T.

J.-Y. Zhang, P.-J. Li, H. Sun, X. Shen, T.-S. Deng, K.-T. Zhu, Q.-F. Zhang, and J.-L. Wu, “Ultraviolet Electroluminescence from Controlled Arsenic-doped ZnO Nanowire Homojunctions,” Appl. Phys. Lett. 93(2), 021116 (2008).
[Crossref]

Zhu, Y.

A. Chen, H. Zhu, Y. Wu, M. Chen, Y. Zhu, X. Gui, and Z. Tang, “Beryllium-Assisted p-Type Doping for ZnO Homojunction Light-Emitting Devices,” Adv. Funct. Mater. 26(21), 3696–3702 (2016).
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Figures (6)

Fig. 1.
Fig. 1. (a) SEM image of Sb doped ZnO nanowire arrays. (b) XRD spectrum of the Sb doped ZnO NWs grown on n-ZnO substrate. The inset images show the X-ray rocking curve of the ZnO (002) peak.
Fig. 2.
Fig. 2. XPS analyses of the various doped level ZnO:Sb NWs grown on n-ZnO substrate. (a) XPS survey spectrum, and high-resolution scans of (b) Zn 2p, (c) Sb 3d and (d) O 1s electrons of ZnO:Sb NWs.
Fig. 3.
Fig. 3. TEM characterization of ZnO:Sb nanowire.(a) show the high- precision TEM image of ZnO:Sb nanowire. The inset image show SAED patterns. (b) TEM EDX spectrum of ZnO:Sb nanowire. (c-f) Elements mapping of Sb doped ZnO nanowire.
Fig. 4.
Fig. 4. FET device of a single Sb-doped ZnO nanowire. (a) SEM micrograph image of nanowire FET device. (b) Single Sb-doped nanowire FET device output characteristic curve. (c) Transfer characteristic curve.
Fig. 5.
Fig. 5. Characterization of the blue LEDs device. (a) Schematic diagram of p-ZnO (Sb doped)/n-ZnO (Ga doped) device. (b) I-V curve of homojunction LED device. (c) Room-temperature Photoluminescence spectra of Sb-doped ZnO nanowires and n-type ZnO single crystal substrate. (d) Electroluminescence spectra of homogeneous junction LED devices under different bias voltage. (e) The peak splitting fitting diagram of EL spectrum of LED device under 8 V bias voltage. (f) Schematic energy band diagrams of Sb-doped p-ZnO NWs and n-ZnO substrate. (g) Optical photograph of the LEDs devices. (h-k) Optical images of LED devices under 4, 6, 8 and 10 V forward bias, respectively.
Fig. 6.
Fig. 6. Stability testing of LED devices. (a) EL spectrum of the LED device. (b) The intensity of blue light emission changes with time.

Tables (1)

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Table 1. Electrical properties of different concentrations Sb-doped ZnO NWs

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