Abstract

We fabricated a van der Waals heterostructure by stacking together monolayers of MoS2 and ReSe2. Transient absorption measurements were performed to study the dynamics of charge transfer, indirect exciton formation, and indirect exciton recombination. The results show that the heterostructure form a type-II band alignment with the conduction band minimum and valance band maximum located in the MoS2 and ReSe2 layers, respectively. By using different pump-probe configurations, we found that electrons could efficiently transfer from ReSe2 to MoS2 and holes along the opposite direction. Once transferred, the electrons and holes form spatially indirect excitons, which have longer recombination lifetimes than excitons in individual monolayers. These results provide useful information for developing van der Waals heterostructure involving ReSe2 for novel electronic and optoelectronic applications.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Full Article  |  PDF Article
OSA Recommended Articles
Probing effect of electric field on photocarrier transfer in graphene-WS2 van der Waals heterostructures

Jiaqi He, Dawei He, Yongsheng Wang, and Hui Zhao
Opt. Express 25(3) 1949-1957 (2017)

Electrically tunable valley polarization and valley coherence in monolayer WSe2 embedded in a van der Waals heterostructure [Invited]

Chitraleema Chakraborty, Arunabh Mukherjee, Liangyu Qiu, and A. Nick Vamivakas
Opt. Mater. Express 9(3) 1479-1487 (2019)

Ultrafast transient absorption measurements of photocarrier dynamics in monolayer and bulk ReSe2

Jiaqi He, Lu Zhang, Dawei He, Yongsheng Wang, Zhiyi He, and Hui Zhao
Opt. Express 26(17) 21501-21509 (2018)

References

  • View by:
  • |
  • |
  • |

  1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
    [Crossref] [PubMed]
  2. Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
    [Crossref] [PubMed]
  3. S. Cui, H. Pu, S. A. Wells, Z. Wen, S. Mao, J. Chang, M. C. Hersam, and J. Chen, “Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors,” Nat. Commun. 6(1), 8632 (2015).
    [Crossref] [PubMed]
  4. O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
    [Crossref] [PubMed]
  5. M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
    [Crossref] [PubMed]
  6. J. M. Yun, Y. J. Noh, C. H. Lee, S. I. Na, S. Lee, S. M. Jo, H. I. Joh, and D. Y. Kim, “Exfoliated and partially oxidized MoS₂ nanosheets by one-pot reaction for efficient and stable organic solar cells,” Small 10(12), 2319–2324 (2014).
    [Crossref] [PubMed]
  7. E. Gourmelon, O. Lignier, H. Hadouda, G. Couturier, J. C. Bernede, J. Tedd, J. Pouzet, and J. Salardenne, “MS2 (M=W, Mo) photosensitive thin films for solar cells,” Sol. Energy Mater. Sol. Cells 46(2), 115–121 (1997).
    [Crossref]
  8. B. Radisavljevic, M. B. Whitwick, and A. Kis, “Integrated circuits and logic operations based on single-layer MoS2.,” ACS Nano 5(12), 9934–9938 (2011).
    [Crossref] [PubMed]
  9. B. W. H. Baugher, H. O. H. Churchill, Y. Yang, and P. Jarillo-Herrero, “Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide,” Nat. Nanotechnol. 9(4), 262–267 (2014).
    [Crossref] [PubMed]
  10. R. Cheng, S. Jiang, Y. Chen, Y. Liu, N. Weiss, H. C. Cheng, H. Wu, Y. Huang, and X. Duan, “Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics,” Nat. Commun. 5(1), 5143 (2014).
    [Crossref] [PubMed]
  11. K. K. Kam and B. A. Parkinson, “Detailed photocurrent spectroscopy of the semiconducting group-Vi transition-metal dichalcogenides,” J. Phys. Chem. 86(4), 463–467 (1982).
    [Crossref]
  12. K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
    [Crossref] [PubMed]
  13. H. Zhao, J. B. Wu, H. X. Zhong, Q. S. Guo, X. M. Wang, F. N. Xia, L. Yang, P. H. Tan, and H. Wang, “Interlayer interactions in anisotropic atomically thin rhenium diselenide,” Nano Res. 8(11), 3651–3661 (2015).
    [Crossref]
  14. D. Wolverson, S. Crampin, A. S. Kazemi, A. Ilie, and S. J. Bending, “Raman spectra of monolayer, few-layer, and bulk ReSe₂: an anisotropic layered semiconductor,” ACS Nano 8(11), 11154–11164 (2014).
    [Crossref] [PubMed]
  15. S. Yang, S. Tongay, Y. Li, Q. Yue, J. B. Xia, S. S. Li, J. Li, and S. H. Wei, “Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors,” Nanoscale 6(13), 7226–7231 (2014).
    [Crossref] [PubMed]
  16. A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
    [Crossref] [PubMed]
  17. A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
    [Crossref] [PubMed]
  18. S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. S. Li, A. Suslu, F. M. Peeters, Q. Liu, J. Li, and S. Tongay, “Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering,” Nano Lett. 15(3), 1660–1666 (2015).
    [Crossref] [PubMed]
  19. D. B. Seley, M. Nath, and B. A. Parkinson, “ReSe2 nanotubes synthesized from sacrificial templates,” J. Mater. Chem. 19(11), 1532–1534 (2009).
    [Crossref]
  20. K. Friemelt, M. C. Luxsteiner, and E. Bucher, “Optical properties of the layered transition-metal-dichalcogenide ReS2: anisotropy in the van der Waals plane,” J. Appl. Phys. 74(8), 5266–5268 (1993).
    [Crossref]
  21. C. H. Ho and C. E. Huang, “Optical property of the near band-edge transitions in rhenium disulfide and diselenide,” J. Alloys Compd. 383(1-2), 74–79 (2004).
    [Crossref]
  22. A. K. Geim and I. V. Grigorieva, “Van der Waals heterostructures,” Nature 499(7459), 419–425 (2013).
    [Crossref] [PubMed]
  23. Y. Liu, N. O. Weiss, X. Duan, H. Cheng, Y. Huang, and X. Duan, “Van der Waals heterostructures and devices,” Nat. Rev. Mater. 1(9), 16042 (2016).
    [Crossref]
  24. K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, “2D materials and van der Waals heterostructures,” Science 353(6298), aac9439 (2016).
    [Crossref] [PubMed]
  25. P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
    [Crossref] [PubMed]
  26. C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p-n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. 9(9), 676–681 (2014).
    [Crossref] [PubMed]
  27. H. M. Hill, A. F. Rigosi, K. T. Rim, G. W. Flynn, and T. F. Heinz, “Band alignment in MoS2/WS2 transition metal dichalcogenide heterostructures probed by scanning tunneling microscopy and spectroscopy,” Nano Lett. 16(8), 4831–4837 (2016).
    [Crossref] [PubMed]
  28. B. Miller, A. Steinhoff, B. Pano, J. Klein, F. Jahnke, A. Holleitner, and U. Wurstbauer, “Long-lived direct and indirect interlayer excitons in van der Waals heterostructures,” Nano Lett. 17(9), 5229–5237 (2017).
    [Crossref] [PubMed]
  29. J. S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D. Mandrus, D. Cobden, W. Yao, and X. Xu, “Interlayer exciton optoelectronics in a 2D heterostructure p-n junction,” Nano Lett. 17(2), 638–643 (2017).
    [Crossref] [PubMed]
  30. K. L. Seyler, P. Rivera, H. Yu, N. P. Wilson, E. L. Ray, D. G. Mandrus, J. Yan, W. Yao, and X. Xu, “Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers,” Nature 567(7746), 66–70 (2019).
    [Crossref] [PubMed]
  31. F. Ceballos, M. Z. Bellus, H. Y. Chiu, and H. Zhao, “Probing charge transfer excitons in a MoSe2-WS2 van der Waals heterostructure,” Nanoscale 7(41), 17523–17528 (2015).
    [Crossref] [PubMed]
  32. F. Ceballos, M. Z. Bellus, H. Y. Chiu, and H. Zhao, “Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der Waals heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
    [Crossref] [PubMed]
  33. X. Hong, J. Kim, S. F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
    [Crossref] [PubMed]
  34. K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
    [Crossref] [PubMed]
  35. F. Ceballos and H. Zhao, “Ultrafast laser spectroscopy of two-dimensional materials beyond graphene,” Adv. Funct. Mater. 27(19), 1604509 (2017).
    [Crossref]
  36. M. Li, M. Z. Bellus, J. Dai, L. Ma, X. Li, H. Zhao, and X. C. Zeng, “A type-I van der Waals heterobilayer of WSe2/MoTe2,” Nanotechnology 29(33), 335203 (2018).
    [Crossref] [PubMed]
  37. A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2.,” Nano Lett. 10(4), 1271–1275 (2010).
    [Crossref] [PubMed]
  38. F. Ceballos, Q. Cui, M. Z. Bellus, and H. Zhao, “Exciton formation in monolayer transition metal dichalcogenides,” Nanoscale 8(22), 11681–11688 (2016).
    [Crossref] [PubMed]
  39. P. Steinleitner, P. Merkl, P. Nagler, J. Mornhinweg, C. Schüller, T. Korn, A. Chernikov, and R. Huber, “Direct observation of ultrafast exciton formation in a monolayer of WSe2,” Nano Lett. 17(3), 1455–1460 (2017).
    [Crossref] [PubMed]

2019 (1)

K. L. Seyler, P. Rivera, H. Yu, N. P. Wilson, E. L. Ray, D. G. Mandrus, J. Yan, W. Yao, and X. Xu, “Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers,” Nature 567(7746), 66–70 (2019).
[Crossref] [PubMed]

2018 (1)

M. Li, M. Z. Bellus, J. Dai, L. Ma, X. Li, H. Zhao, and X. C. Zeng, “A type-I van der Waals heterobilayer of WSe2/MoTe2,” Nanotechnology 29(33), 335203 (2018).
[Crossref] [PubMed]

2017 (5)

F. Ceballos and H. Zhao, “Ultrafast laser spectroscopy of two-dimensional materials beyond graphene,” Adv. Funct. Mater. 27(19), 1604509 (2017).
[Crossref]

P. Steinleitner, P. Merkl, P. Nagler, J. Mornhinweg, C. Schüller, T. Korn, A. Chernikov, and R. Huber, “Direct observation of ultrafast exciton formation in a monolayer of WSe2,” Nano Lett. 17(3), 1455–1460 (2017).
[Crossref] [PubMed]

B. Miller, A. Steinhoff, B. Pano, J. Klein, F. Jahnke, A. Holleitner, and U. Wurstbauer, “Long-lived direct and indirect interlayer excitons in van der Waals heterostructures,” Nano Lett. 17(9), 5229–5237 (2017).
[Crossref] [PubMed]

J. S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D. Mandrus, D. Cobden, W. Yao, and X. Xu, “Interlayer exciton optoelectronics in a 2D heterostructure p-n junction,” Nano Lett. 17(2), 638–643 (2017).
[Crossref] [PubMed]

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

2016 (5)

H. M. Hill, A. F. Rigosi, K. T. Rim, G. W. Flynn, and T. F. Heinz, “Band alignment in MoS2/WS2 transition metal dichalcogenide heterostructures probed by scanning tunneling microscopy and spectroscopy,” Nano Lett. 16(8), 4831–4837 (2016).
[Crossref] [PubMed]

K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
[Crossref] [PubMed]

Y. Liu, N. O. Weiss, X. Duan, H. Cheng, Y. Huang, and X. Duan, “Van der Waals heterostructures and devices,” Nat. Rev. Mater. 1(9), 16042 (2016).
[Crossref]

K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, “2D materials and van der Waals heterostructures,” Science 353(6298), aac9439 (2016).
[Crossref] [PubMed]

F. Ceballos, Q. Cui, M. Z. Bellus, and H. Zhao, “Exciton formation in monolayer transition metal dichalcogenides,” Nanoscale 8(22), 11681–11688 (2016).
[Crossref] [PubMed]

2015 (5)

P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
[Crossref] [PubMed]

F. Ceballos, M. Z. Bellus, H. Y. Chiu, and H. Zhao, “Probing charge transfer excitons in a MoSe2-WS2 van der Waals heterostructure,” Nanoscale 7(41), 17523–17528 (2015).
[Crossref] [PubMed]

S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. S. Li, A. Suslu, F. M. Peeters, Q. Liu, J. Li, and S. Tongay, “Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering,” Nano Lett. 15(3), 1660–1666 (2015).
[Crossref] [PubMed]

H. Zhao, J. B. Wu, H. X. Zhong, Q. S. Guo, X. M. Wang, F. N. Xia, L. Yang, P. H. Tan, and H. Wang, “Interlayer interactions in anisotropic atomically thin rhenium diselenide,” Nano Res. 8(11), 3651–3661 (2015).
[Crossref]

S. Cui, H. Pu, S. A. Wells, Z. Wen, S. Mao, J. Chang, M. C. Hersam, and J. Chen, “Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors,” Nat. Commun. 6(1), 8632 (2015).
[Crossref] [PubMed]

2014 (9)

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

J. M. Yun, Y. J. Noh, C. H. Lee, S. I. Na, S. Lee, S. M. Jo, H. I. Joh, and D. Y. Kim, “Exfoliated and partially oxidized MoS₂ nanosheets by one-pot reaction for efficient and stable organic solar cells,” Small 10(12), 2319–2324 (2014).
[Crossref] [PubMed]

B. W. H. Baugher, H. O. H. Churchill, Y. Yang, and P. Jarillo-Herrero, “Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide,” Nat. Nanotechnol. 9(4), 262–267 (2014).
[Crossref] [PubMed]

R. Cheng, S. Jiang, Y. Chen, Y. Liu, N. Weiss, H. C. Cheng, H. Wu, Y. Huang, and X. Duan, “Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics,” Nat. Commun. 5(1), 5143 (2014).
[Crossref] [PubMed]

D. Wolverson, S. Crampin, A. S. Kazemi, A. Ilie, and S. J. Bending, “Raman spectra of monolayer, few-layer, and bulk ReSe₂: an anisotropic layered semiconductor,” ACS Nano 8(11), 11154–11164 (2014).
[Crossref] [PubMed]

S. Yang, S. Tongay, Y. Li, Q. Yue, J. B. Xia, S. S. Li, J. Li, and S. H. Wei, “Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors,” Nanoscale 6(13), 7226–7231 (2014).
[Crossref] [PubMed]

F. Ceballos, M. Z. Bellus, H. Y. Chiu, and H. Zhao, “Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der Waals heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
[Crossref] [PubMed]

X. Hong, J. Kim, S. F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p-n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. 9(9), 676–681 (2014).
[Crossref] [PubMed]

2013 (3)

A. K. Geim and I. V. Grigorieva, “Van der Waals heterostructures,” Nature 499(7459), 419–425 (2013).
[Crossref] [PubMed]

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

2012 (1)

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

2011 (1)

B. Radisavljevic, M. B. Whitwick, and A. Kis, “Integrated circuits and logic operations based on single-layer MoS2.,” ACS Nano 5(12), 9934–9938 (2011).
[Crossref] [PubMed]

2010 (2)

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2.,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

2009 (1)

D. B. Seley, M. Nath, and B. A. Parkinson, “ReSe2 nanotubes synthesized from sacrificial templates,” J. Mater. Chem. 19(11), 1532–1534 (2009).
[Crossref]

2004 (2)

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

C. H. Ho and C. E. Huang, “Optical property of the near band-edge transitions in rhenium disulfide and diselenide,” J. Alloys Compd. 383(1-2), 74–79 (2004).
[Crossref]

1997 (1)

E. Gourmelon, O. Lignier, H. Hadouda, G. Couturier, J. C. Bernede, J. Tedd, J. Pouzet, and J. Salardenne, “MS2 (M=W, Mo) photosensitive thin films for solar cells,” Sol. Energy Mater. Sol. Cells 46(2), 115–121 (1997).
[Crossref]

1993 (1)

K. Friemelt, M. C. Luxsteiner, and E. Bucher, “Optical properties of the layered transition-metal-dichalcogenide ReS2: anisotropy in the van der Waals plane,” J. Appl. Phys. 74(8), 5266–5268 (1993).
[Crossref]

1982 (1)

K. K. Kam and B. A. Parkinson, “Detailed photocurrent spectroscopy of the semiconducting group-Vi transition-metal dichalcogenides,” J. Phys. Chem. 86(4), 463–467 (1982).
[Crossref]

Aivazian, G.

P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
[Crossref] [PubMed]

Arefe, G.

C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p-n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. 9(9), 676–681 (2014).
[Crossref] [PubMed]

Arora, A.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Balicas, L.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

Baugher, B. W. H.

B. W. H. Baugher, H. O. H. Churchill, Y. Yang, and P. Jarillo-Herrero, “Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide,” Nat. Nanotechnol. 9(4), 262–267 (2014).
[Crossref] [PubMed]

Bellus, M. Z.

M. Li, M. Z. Bellus, J. Dai, L. Ma, X. Li, H. Zhao, and X. C. Zeng, “A type-I van der Waals heterobilayer of WSe2/MoTe2,” Nanotechnology 29(33), 335203 (2018).
[Crossref] [PubMed]

F. Ceballos, Q. Cui, M. Z. Bellus, and H. Zhao, “Exciton formation in monolayer transition metal dichalcogenides,” Nanoscale 8(22), 11681–11688 (2016).
[Crossref] [PubMed]

F. Ceballos, M. Z. Bellus, H. Y. Chiu, and H. Zhao, “Probing charge transfer excitons in a MoSe2-WS2 van der Waals heterostructure,” Nanoscale 7(41), 17523–17528 (2015).
[Crossref] [PubMed]

F. Ceballos, M. Z. Bellus, H. Y. Chiu, and H. Zhao, “Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der Waals heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
[Crossref] [PubMed]

Bending, S. J.

D. Wolverson, S. Crampin, A. S. Kazemi, A. Ilie, and S. J. Bending, “Raman spectra of monolayer, few-layer, and bulk ReSe₂: an anisotropic layered semiconductor,” ACS Nano 8(11), 11154–11164 (2014).
[Crossref] [PubMed]

Berkdemir, A.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

Bernede, J. C.

E. Gourmelon, O. Lignier, H. Hadouda, G. Couturier, J. C. Bernede, J. Tedd, J. Pouzet, and J. Salardenne, “MS2 (M=W, Mo) photosensitive thin films for solar cells,” Sol. Energy Mater. Sol. Cells 46(2), 115–121 (1997).
[Crossref]

Bhattacharya, A.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Boulesbaa, A.

K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
[Crossref] [PubMed]

Bratschitsch, R.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Bucher, E.

K. Friemelt, M. C. Luxsteiner, and E. Bucher, “Optical properties of the layered transition-metal-dichalcogenide ReS2: anisotropy in the van der Waals plane,” J. Appl. Phys. 74(8), 5266–5268 (1993).
[Crossref]

Carvalho, A.

K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, “2D materials and van der Waals heterostructures,” Science 353(6298), aac9439 (2016).
[Crossref] [PubMed]

Castro Neto, A. H.

K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, “2D materials and van der Waals heterostructures,” Science 353(6298), aac9439 (2016).
[Crossref] [PubMed]

Castro-Beltrán, A.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

Ceballos, F.

F. Ceballos and H. Zhao, “Ultrafast laser spectroscopy of two-dimensional materials beyond graphene,” Adv. Funct. Mater. 27(19), 1604509 (2017).
[Crossref]

F. Ceballos, Q. Cui, M. Z. Bellus, and H. Zhao, “Exciton formation in monolayer transition metal dichalcogenides,” Nanoscale 8(22), 11681–11688 (2016).
[Crossref] [PubMed]

K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
[Crossref] [PubMed]

F. Ceballos, M. Z. Bellus, H. Y. Chiu, and H. Zhao, “Probing charge transfer excitons in a MoSe2-WS2 van der Waals heterostructure,” Nanoscale 7(41), 17523–17528 (2015).
[Crossref] [PubMed]

F. Ceballos, M. Z. Bellus, H. Y. Chiu, and H. Zhao, “Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der Waals heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
[Crossref] [PubMed]

Chang, J.

S. Cui, H. Pu, S. A. Wells, Z. Wen, S. Mao, J. Chang, M. C. Hersam, and J. Chen, “Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors,” Nat. Commun. 6(1), 8632 (2015).
[Crossref] [PubMed]

Chang, J. K.

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

Chen, C. H.

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

Chen, H.

S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. S. Li, A. Suslu, F. M. Peeters, Q. Liu, J. Li, and S. Tongay, “Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering,” Nano Lett. 15(3), 1660–1666 (2015).
[Crossref] [PubMed]

Chen, J.

S. Cui, H. Pu, S. A. Wells, Z. Wen, S. Mao, J. Chang, M. C. Hersam, and J. Chen, “Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors,” Nat. Commun. 6(1), 8632 (2015).
[Crossref] [PubMed]

Chen, L. J.

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

Chen, W.

C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p-n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. 9(9), 676–681 (2014).
[Crossref] [PubMed]

Chen, X.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Chen, Y.

R. Cheng, S. Jiang, Y. Chen, Y. Liu, N. Weiss, H. C. Cheng, H. Wu, Y. Huang, and X. Duan, “Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics,” Nat. Commun. 5(1), 5143 (2014).
[Crossref] [PubMed]

Cheng, H.

Y. Liu, N. O. Weiss, X. Duan, H. Cheng, Y. Huang, and X. Duan, “Van der Waals heterostructures and devices,” Nat. Rev. Mater. 1(9), 16042 (2016).
[Crossref]

Cheng, H. C.

R. Cheng, S. Jiang, Y. Chen, Y. Liu, N. Weiss, H. C. Cheng, H. Wu, Y. Huang, and X. Duan, “Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics,” Nat. Commun. 5(1), 5143 (2014).
[Crossref] [PubMed]

Cheng, R.

R. Cheng, S. Jiang, Y. Chen, Y. Liu, N. Weiss, H. C. Cheng, H. Wu, Y. Huang, and X. Duan, “Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics,” Nat. Commun. 5(1), 5143 (2014).
[Crossref] [PubMed]

Chernikov, A.

P. Steinleitner, P. Merkl, P. Nagler, J. Mornhinweg, C. Schüller, T. Korn, A. Chernikov, and R. Huber, “Direct observation of ultrafast exciton formation in a monolayer of WSe2,” Nano Lett. 17(3), 1455–1460 (2017).
[Crossref] [PubMed]

Chim, C. Y.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2.,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

Chiu, H. Y.

F. Ceballos, M. Z. Bellus, H. Y. Chiu, and H. Zhao, “Probing charge transfer excitons in a MoSe2-WS2 van der Waals heterostructure,” Nanoscale 7(41), 17523–17528 (2015).
[Crossref] [PubMed]

F. Ceballos, M. Z. Bellus, H. Y. Chiu, and H. Zhao, “Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der Waals heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
[Crossref] [PubMed]

Churchill, H. O. H.

B. W. H. Baugher, H. O. H. Churchill, Y. Yang, and P. Jarillo-Herrero, “Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide,” Nat. Nanotechnol. 9(4), 262–267 (2014).
[Crossref] [PubMed]

Clark, G.

P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
[Crossref] [PubMed]

Cobden, D.

J. S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D. Mandrus, D. Cobden, W. Yao, and X. Xu, “Interlayer exciton optoelectronics in a 2D heterostructure p-n junction,” Nano Lett. 17(2), 638–643 (2017).
[Crossref] [PubMed]

Couturier, G.

E. Gourmelon, O. Lignier, H. Hadouda, G. Couturier, J. C. Bernede, J. Tedd, J. Pouzet, and J. Salardenne, “MS2 (M=W, Mo) photosensitive thin films for solar cells,” Sol. Energy Mater. Sol. Cells 46(2), 115–121 (1997).
[Crossref]

Crampin, S.

D. Wolverson, S. Crampin, A. S. Kazemi, A. Ilie, and S. J. Bending, “Raman spectra of monolayer, few-layer, and bulk ReSe₂: an anisotropic layered semiconductor,” ACS Nano 8(11), 11154–11164 (2014).
[Crossref] [PubMed]

Cui, Q.

F. Ceballos, Q. Cui, M. Z. Bellus, and H. Zhao, “Exciton formation in monolayer transition metal dichalcogenides,” Nanoscale 8(22), 11681–11688 (2016).
[Crossref] [PubMed]

Cui, S.

S. Cui, H. Pu, S. A. Wells, Z. Wen, S. Mao, J. Chang, M. C. Hersam, and J. Chen, “Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors,” Nat. Commun. 6(1), 8632 (2015).
[Crossref] [PubMed]

Cui, X.

C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p-n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. 9(9), 676–681 (2014).
[Crossref] [PubMed]

Dai, J.

M. Li, M. Z. Bellus, J. Dai, L. Ma, X. Li, H. Zhao, and X. C. Zeng, “A type-I van der Waals heterobilayer of WSe2/MoTe2,” Nanotechnology 29(33), 335203 (2018).
[Crossref] [PubMed]

Deilmann, T.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Del Pozo-Zamudio, O.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Drüppel, M.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Duan, X.

Y. Liu, N. O. Weiss, X. Duan, H. Cheng, Y. Huang, and X. Duan, “Van der Waals heterostructures and devices,” Nat. Rev. Mater. 1(9), 16042 (2016).
[Crossref]

Y. Liu, N. O. Weiss, X. Duan, H. Cheng, Y. Huang, and X. Duan, “Van der Waals heterostructures and devices,” Nat. Rev. Mater. 1(9), 16042 (2016).
[Crossref]

R. Cheng, S. Jiang, Y. Chen, Y. Liu, N. Weiss, H. C. Cheng, H. Wu, Y. Huang, and X. Duan, “Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics,” Nat. Commun. 5(1), 5143 (2014).
[Crossref] [PubMed]

Dubonos, S. V.

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Duscher, G.

K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
[Crossref] [PubMed]

Elías, A. L.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

Endo, M.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

Feng, S.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

Firsov, A. A.

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Flynn, G. W.

H. M. Hill, A. F. Rigosi, K. T. Rim, G. W. Flynn, and T. F. Heinz, “Band alignment in MoS2/WS2 transition metal dichalcogenide heterostructures probed by scanning tunneling microscopy and spectroscopy,” Nano Lett. 16(8), 4831–4837 (2016).
[Crossref] [PubMed]

Friemelt, K.

K. Friemelt, M. C. Luxsteiner, and E. Bucher, “Optical properties of the layered transition-metal-dichalcogenide ReS2: anisotropy in the van der Waals plane,” J. Appl. Phys. 74(8), 5266–5268 (1993).
[Crossref]

Galli, G.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2.,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

Geim, A. K.

A. K. Geim and I. V. Grigorieva, “Van der Waals heterostructures,” Nature 499(7459), 419–425 (2013).
[Crossref] [PubMed]

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Geohegan, D. B.

K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
[Crossref] [PubMed]

Ghimire, N. J.

P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
[Crossref] [PubMed]

Gourmelon, E.

E. Gourmelon, O. Lignier, H. Hadouda, G. Couturier, J. C. Bernede, J. Tedd, J. Pouzet, and J. Salardenne, “MS2 (M=W, Mo) photosensitive thin films for solar cells,” Sol. Energy Mater. Sol. Cells 46(2), 115–121 (1997).
[Crossref]

Grigorieva, I. V.

A. K. Geim and I. V. Grigorieva, “Van der Waals heterostructures,” Nature 499(7459), 419–425 (2013).
[Crossref] [PubMed]

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Guo, J.

C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p-n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. 9(9), 676–681 (2014).
[Crossref] [PubMed]

Guo, Q. S.

H. Zhao, J. B. Wu, H. X. Zhong, Q. S. Guo, X. M. Wang, F. N. Xia, L. Yang, P. H. Tan, and H. Wang, “Interlayer interactions in anisotropic atomically thin rhenium diselenide,” Nano Res. 8(11), 3651–3661 (2015).
[Crossref]

Gutiérrez, H. R.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

Hadouda, H.

E. Gourmelon, O. Lignier, H. Hadouda, G. Couturier, J. C. Bernede, J. Tedd, J. Pouzet, and J. Salardenne, “MS2 (M=W, Mo) photosensitive thin films for solar cells,” Sol. Energy Mater. Sol. Cells 46(2), 115–121 (1997).
[Crossref]

Han, M.

C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p-n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. 9(9), 676–681 (2014).
[Crossref] [PubMed]

Hayashi, T.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

He, J. H.

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

Heinz, T. F.

H. M. Hill, A. F. Rigosi, K. T. Rim, G. W. Flynn, and T. F. Heinz, “Band alignment in MoS2/WS2 transition metal dichalcogenide heterostructures probed by scanning tunneling microscopy and spectroscopy,” Nano Lett. 16(8), 4831–4837 (2016).
[Crossref] [PubMed]

C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p-n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. 9(9), 676–681 (2014).
[Crossref] [PubMed]

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Hersam, M. C.

S. Cui, H. Pu, S. A. Wells, Z. Wen, S. Mao, J. Chang, M. C. Hersam, and J. Chen, “Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors,” Nat. Commun. 6(1), 8632 (2015).
[Crossref] [PubMed]

Hill, H. M.

H. M. Hill, A. F. Rigosi, K. T. Rim, G. W. Flynn, and T. F. Heinz, “Band alignment in MoS2/WS2 transition metal dichalcogenide heterostructures probed by scanning tunneling microscopy and spectroscopy,” Nano Lett. 16(8), 4831–4837 (2016).
[Crossref] [PubMed]

Ho, C. H.

C. H. Ho and C. E. Huang, “Optical property of the near band-edge transitions in rhenium disulfide and diselenide,” J. Alloys Compd. 383(1-2), 74–79 (2004).
[Crossref]

Holleitner, A.

B. Miller, A. Steinhoff, B. Pano, J. Klein, F. Jahnke, A. Holleitner, and U. Wurstbauer, “Long-lived direct and indirect interlayer excitons in van der Waals heterostructures,” Nano Lett. 17(9), 5229–5237 (2017).
[Crossref] [PubMed]

Hone, J.

C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p-n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. 9(9), 676–681 (2014).
[Crossref] [PubMed]

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Hong, X.

X. Hong, J. Kim, S. F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

Huang, B.

K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
[Crossref] [PubMed]

Huang, C. E.

C. H. Ho and C. E. Huang, “Optical property of the near band-edge transitions in rhenium disulfide and diselenide,” J. Alloys Compd. 383(1-2), 74–79 (2004).
[Crossref]

Huang, Y.

Y. Liu, N. O. Weiss, X. Duan, H. Cheng, Y. Huang, and X. Duan, “Van der Waals heterostructures and devices,” Nat. Rev. Mater. 1(9), 16042 (2016).
[Crossref]

R. Cheng, S. Jiang, Y. Chen, Y. Liu, N. Weiss, H. C. Cheng, H. Wu, Y. Huang, and X. Duan, “Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics,” Nat. Commun. 5(1), 5143 (2014).
[Crossref] [PubMed]

Huber, R.

P. Steinleitner, P. Merkl, P. Nagler, J. Mornhinweg, C. Schüller, T. Korn, A. Chernikov, and R. Huber, “Direct observation of ultrafast exciton formation in a monolayer of WSe2,” Nano Lett. 17(3), 1455–1460 (2017).
[Crossref] [PubMed]

Ilie, A.

D. Wolverson, S. Crampin, A. S. Kazemi, A. Ilie, and S. J. Bending, “Raman spectra of monolayer, few-layer, and bulk ReSe₂: an anisotropic layered semiconductor,” ACS Nano 8(11), 11154–11164 (2014).
[Crossref] [PubMed]

Jahnke, F.

B. Miller, A. Steinhoff, B. Pano, J. Klein, F. Jahnke, A. Holleitner, and U. Wurstbauer, “Long-lived direct and indirect interlayer excitons in van der Waals heterostructures,” Nano Lett. 17(9), 5229–5237 (2017).
[Crossref] [PubMed]

Jarillo-Herrero, P.

B. W. H. Baugher, H. O. H. Churchill, Y. Yang, and P. Jarillo-Herrero, “Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide,” Nat. Nanotechnol. 9(4), 262–267 (2014).
[Crossref] [PubMed]

Jariwala, B.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Jiang, D.

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Jiang, L.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Jiang, S.

R. Cheng, S. Jiang, Y. Chen, Y. Liu, N. Weiss, H. C. Cheng, H. Wu, Y. Huang, and X. Duan, “Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics,” Nat. Commun. 5(1), 5143 (2014).
[Crossref] [PubMed]

Jin, C.

X. Hong, J. Kim, S. F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

Jo, S. M.

J. M. Yun, Y. J. Noh, C. H. Lee, S. I. Na, S. Lee, S. M. Jo, H. I. Joh, and D. Y. Kim, “Exfoliated and partially oxidized MoS₂ nanosheets by one-pot reaction for efficient and stable organic solar cells,” Small 10(12), 2319–2324 (2014).
[Crossref] [PubMed]

Joh, H. I.

J. M. Yun, Y. J. Noh, C. H. Lee, S. I. Na, S. Lee, S. M. Jo, H. I. Joh, and D. Y. Kim, “Exfoliated and partially oxidized MoS₂ nanosheets by one-pot reaction for efficient and stable organic solar cells,” Small 10(12), 2319–2324 (2014).
[Crossref] [PubMed]

Jones, A. M.

P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
[Crossref] [PubMed]

Kam, K. K.

K. K. Kam and B. A. Parkinson, “Detailed photocurrent spectroscopy of the semiconducting group-Vi transition-metal dichalcogenides,” J. Phys. Chem. 86(4), 463–467 (1982).
[Crossref]

Kayci, M.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Kazemi, A. S.

D. Wolverson, S. Crampin, A. S. Kazemi, A. Ilie, and S. J. Bending, “Raman spectra of monolayer, few-layer, and bulk ReSe₂: an anisotropic layered semiconductor,” ACS Nano 8(11), 11154–11164 (2014).
[Crossref] [PubMed]

Kim, D. Y.

J. M. Yun, Y. J. Noh, C. H. Lee, S. I. Na, S. Lee, S. M. Jo, H. I. Joh, and D. Y. Kim, “Exfoliated and partially oxidized MoS₂ nanosheets by one-pot reaction for efficient and stable organic solar cells,” Small 10(12), 2319–2324 (2014).
[Crossref] [PubMed]

Kim, J.

X. Hong, J. Kim, S. F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2.,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

Kim, P.

C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p-n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. 9(9), 676–681 (2014).
[Crossref] [PubMed]

Kim, Y. A.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

Kis, A.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

B. Radisavljevic, M. B. Whitwick, and A. Kis, “Integrated circuits and logic operations based on single-layer MoS2.,” ACS Nano 5(12), 9934–9938 (2011).
[Crossref] [PubMed]

Klein, J.

B. Miller, A. Steinhoff, B. Pano, J. Klein, F. Jahnke, A. Holleitner, and U. Wurstbauer, “Long-lived direct and indirect interlayer excitons in van der Waals heterostructures,” Nano Lett. 17(9), 5229–5237 (2017).
[Crossref] [PubMed]

Klement, P.

P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
[Crossref] [PubMed]

Korn, T.

P. Steinleitner, P. Merkl, P. Nagler, J. Mornhinweg, C. Schüller, T. Korn, A. Chernikov, and R. Huber, “Direct observation of ultrafast exciton formation in a monolayer of WSe2,” Nano Lett. 17(3), 1455–1460 (2017).
[Crossref] [PubMed]

Krüger, P.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Lee, C.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Lee, C. H.

J. M. Yun, Y. J. Noh, C. H. Lee, S. I. Na, S. Lee, S. M. Jo, H. I. Joh, and D. Y. Kim, “Exfoliated and partially oxidized MoS₂ nanosheets by one-pot reaction for efficient and stable organic solar cells,” Small 10(12), 2319–2324 (2014).
[Crossref] [PubMed]

C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p-n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. 9(9), 676–681 (2014).
[Crossref] [PubMed]

Lee, G. H.

C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p-n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. 9(9), 676–681 (2014).
[Crossref] [PubMed]

Lee, S.

J. M. Yun, Y. J. Noh, C. H. Lee, S. I. Na, S. Lee, S. M. Jo, H. I. Joh, and D. Y. Kim, “Exfoliated and partially oxidized MoS₂ nanosheets by one-pot reaction for efficient and stable organic solar cells,” Small 10(12), 2319–2324 (2014).
[Crossref] [PubMed]

Lee-Wong, E.

J. S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D. Mandrus, D. Cobden, W. Yao, and X. Xu, “Interlayer exciton optoelectronics in a 2D heterostructure p-n junction,” Nano Lett. 17(2), 638–643 (2017).
[Crossref] [PubMed]

Lembke, D.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Li, H.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Li, J.

S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. S. Li, A. Suslu, F. M. Peeters, Q. Liu, J. Li, and S. Tongay, “Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering,” Nano Lett. 15(3), 1660–1666 (2015).
[Crossref] [PubMed]

S. Yang, S. Tongay, Y. Li, Q. Yue, J. B. Xia, S. S. Li, J. Li, and S. H. Wei, “Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors,” Nanoscale 6(13), 7226–7231 (2014).
[Crossref] [PubMed]

Li, L. J.

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

Li, M.

M. Li, M. Z. Bellus, J. Dai, L. Ma, X. Li, H. Zhao, and X. C. Zeng, “A type-I van der Waals heterobilayer of WSe2/MoTe2,” Nanotechnology 29(33), 335203 (2018).
[Crossref] [PubMed]

Li, S. S.

S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. S. Li, A. Suslu, F. M. Peeters, Q. Liu, J. Li, and S. Tongay, “Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering,” Nano Lett. 15(3), 1660–1666 (2015).
[Crossref] [PubMed]

S. Yang, S. Tongay, Y. Li, Q. Yue, J. B. Xia, S. S. Li, J. Li, and S. H. Wei, “Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors,” Nanoscale 6(13), 7226–7231 (2014).
[Crossref] [PubMed]

Li, T.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2.,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

Li, X.

M. Li, M. Z. Bellus, J. Dai, L. Ma, X. Li, H. Zhao, and X. C. Zeng, “A type-I van der Waals heterobilayer of WSe2/MoTe2,” Nanotechnology 29(33), 335203 (2018).
[Crossref] [PubMed]

Li, Y.

S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. S. Li, A. Suslu, F. M. Peeters, Q. Liu, J. Li, and S. Tongay, “Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering,” Nano Lett. 15(3), 1660–1666 (2015).
[Crossref] [PubMed]

S. Yang, S. Tongay, Y. Li, Q. Yue, J. B. Xia, S. S. Li, J. Li, and S. H. Wei, “Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors,” Nanoscale 6(13), 7226–7231 (2014).
[Crossref] [PubMed]

C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p-n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. 9(9), 676–681 (2014).
[Crossref] [PubMed]

Lignier, O.

E. Gourmelon, O. Lignier, H. Hadouda, G. Couturier, J. C. Bernede, J. Tedd, J. Pouzet, and J. Salardenne, “MS2 (M=W, Mo) photosensitive thin films for solar cells,” Sol. Energy Mater. Sol. Cells 46(2), 115–121 (1997).
[Crossref]

Lin, M. W.

K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
[Crossref] [PubMed]

Liu, Q.

S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. S. Li, A. Suslu, F. M. Peeters, Q. Liu, J. Li, and S. Tongay, “Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering,” Nano Lett. 15(3), 1660–1666 (2015).
[Crossref] [PubMed]

Liu, Y.

Y. Liu, N. O. Weiss, X. Duan, H. Cheng, Y. Huang, and X. Duan, “Van der Waals heterostructures and devices,” Nat. Rev. Mater. 1(9), 16042 (2016).
[Crossref]

R. Cheng, S. Jiang, Y. Chen, Y. Liu, N. Weiss, H. C. Cheng, H. Wu, Y. Huang, and X. Duan, “Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics,” Nat. Commun. 5(1), 5143 (2014).
[Crossref] [PubMed]

Long, A. D.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

Lopez-Sanchez, O.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

López-Urías, F.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

Lu, G.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Luxsteiner, M. C.

K. Friemelt, M. C. Luxsteiner, and E. Bucher, “Optical properties of the layered transition-metal-dichalcogenide ReS2: anisotropy in the van der Waals plane,” J. Appl. Phys. 74(8), 5266–5268 (1993).
[Crossref]

Lv, R.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

Ma, L.

M. Li, M. Z. Bellus, J. Dai, L. Ma, X. Li, H. Zhao, and X. C. Zeng, “A type-I van der Waals heterobilayer of WSe2/MoTe2,” Nanotechnology 29(33), 335203 (2018).
[Crossref] [PubMed]

Mahjouri-Samani, M.

K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
[Crossref] [PubMed]

Mak, K. F.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Mallouk, T. E.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

Mandrus, D.

J. S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D. Mandrus, D. Cobden, W. Yao, and X. Xu, “Interlayer exciton optoelectronics in a 2D heterostructure p-n junction,” Nano Lett. 17(2), 638–643 (2017).
[Crossref] [PubMed]

Mandrus, D. G.

K. L. Seyler, P. Rivera, H. Yu, N. P. Wilson, E. L. Ray, D. G. Mandrus, J. Yan, W. Yao, and X. Xu, “Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers,” Nature 567(7746), 66–70 (2019).
[Crossref] [PubMed]

P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
[Crossref] [PubMed]

Mao, S.

S. Cui, H. Pu, S. A. Wells, Z. Wen, S. Mao, J. Chang, M. C. Hersam, and J. Chen, “Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors,” Nat. Commun. 6(1), 8632 (2015).
[Crossref] [PubMed]

Merkl, P.

P. Steinleitner, P. Merkl, P. Nagler, J. Mornhinweg, C. Schüller, T. Korn, A. Chernikov, and R. Huber, “Direct observation of ultrafast exciton formation in a monolayer of WSe2,” Nano Lett. 17(3), 1455–1460 (2017).
[Crossref] [PubMed]

Michaelis de Vasconcellos, S.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Miller, B.

B. Miller, A. Steinhoff, B. Pano, J. Klein, F. Jahnke, A. Holleitner, and U. Wurstbauer, “Long-lived direct and indirect interlayer excitons in van der Waals heterostructures,” Nano Lett. 17(9), 5229–5237 (2017).
[Crossref] [PubMed]

Mishchenko, A.

K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, “2D materials and van der Waals heterostructures,” Science 353(6298), aac9439 (2016).
[Crossref] [PubMed]

Mornhinweg, J.

P. Steinleitner, P. Merkl, P. Nagler, J. Mornhinweg, C. Schüller, T. Korn, A. Chernikov, and R. Huber, “Direct observation of ultrafast exciton formation in a monolayer of WSe2,” Nano Lett. 17(3), 1455–1460 (2017).
[Crossref] [PubMed]

Morozov, S. V.

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Na, S. I.

J. M. Yun, Y. J. Noh, C. H. Lee, S. I. Na, S. Lee, S. M. Jo, H. I. Joh, and D. Y. Kim, “Exfoliated and partially oxidized MoS₂ nanosheets by one-pot reaction for efficient and stable organic solar cells,” Small 10(12), 2319–2324 (2014).
[Crossref] [PubMed]

Nagler, P.

P. Steinleitner, P. Merkl, P. Nagler, J. Mornhinweg, C. Schüller, T. Korn, A. Chernikov, and R. Huber, “Direct observation of ultrafast exciton formation in a monolayer of WSe2,” Nano Lett. 17(3), 1455–1460 (2017).
[Crossref] [PubMed]

Nath, M.

D. B. Seley, M. Nath, and B. A. Parkinson, “ReSe2 nanotubes synthesized from sacrificial templates,” J. Mater. Chem. 19(11), 1532–1534 (2009).
[Crossref]

Noh, Y. J.

J. M. Yun, Y. J. Noh, C. H. Lee, S. I. Na, S. Lee, S. M. Jo, H. I. Joh, and D. Y. Kim, “Exfoliated and partially oxidized MoS₂ nanosheets by one-pot reaction for efficient and stable organic solar cells,” Small 10(12), 2319–2324 (2014).
[Crossref] [PubMed]

Noky, J.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Novoselov, K. S.

K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, “2D materials and van der Waals heterostructures,” Science 353(6298), aac9439 (2016).
[Crossref] [PubMed]

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Nuckolls, C.

C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p-n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. 9(9), 676–681 (2014).
[Crossref] [PubMed]

Pano, B.

B. Miller, A. Steinhoff, B. Pano, J. Klein, F. Jahnke, A. Holleitner, and U. Wurstbauer, “Long-lived direct and indirect interlayer excitons in van der Waals heterostructures,” Nano Lett. 17(9), 5229–5237 (2017).
[Crossref] [PubMed]

Parkinson, B. A.

D. B. Seley, M. Nath, and B. A. Parkinson, “ReSe2 nanotubes synthesized from sacrificial templates,” J. Mater. Chem. 19(11), 1532–1534 (2009).
[Crossref]

K. K. Kam and B. A. Parkinson, “Detailed photocurrent spectroscopy of the semiconducting group-Vi transition-metal dichalcogenides,” J. Phys. Chem. 86(4), 463–467 (1982).
[Crossref]

Peeters, F. M.

S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. S. Li, A. Suslu, F. M. Peeters, Q. Liu, J. Li, and S. Tongay, “Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering,” Nano Lett. 15(3), 1660–1666 (2015).
[Crossref] [PubMed]

Perea-López, N.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

Pouzet, J.

E. Gourmelon, O. Lignier, H. Hadouda, G. Couturier, J. C. Bernede, J. Tedd, J. Pouzet, and J. Salardenne, “MS2 (M=W, Mo) photosensitive thin films for solar cells,” Sol. Energy Mater. Sol. Cells 46(2), 115–121 (1997).
[Crossref]

Pradhan, N. R.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

Pu, H.

S. Cui, H. Pu, S. A. Wells, Z. Wen, S. Mao, J. Chang, M. C. Hersam, and J. Chen, “Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors,” Nat. Commun. 6(1), 8632 (2015).
[Crossref] [PubMed]

Puretzky, A. A.

K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
[Crossref] [PubMed]

Radenovic, A.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

Radisavljevic, B.

B. Radisavljevic, M. B. Whitwick, and A. Kis, “Integrated circuits and logic operations based on single-layer MoS2.,” ACS Nano 5(12), 9934–9938 (2011).
[Crossref] [PubMed]

Ray, E. L.

K. L. Seyler, P. Rivera, H. Yu, N. P. Wilson, E. L. Ray, D. G. Mandrus, J. Yan, W. Yao, and X. Xu, “Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers,” Nature 567(7746), 66–70 (2019).
[Crossref] [PubMed]

Rigosi, A. F.

H. M. Hill, A. F. Rigosi, K. T. Rim, G. W. Flynn, and T. F. Heinz, “Band alignment in MoS2/WS2 transition metal dichalcogenide heterostructures probed by scanning tunneling microscopy and spectroscopy,” Nano Lett. 16(8), 4831–4837 (2016).
[Crossref] [PubMed]

Rim, K. T.

H. M. Hill, A. F. Rigosi, K. T. Rim, G. W. Flynn, and T. F. Heinz, “Band alignment in MoS2/WS2 transition metal dichalcogenide heterostructures probed by scanning tunneling microscopy and spectroscopy,” Nano Lett. 16(8), 4831–4837 (2016).
[Crossref] [PubMed]

Rivera, P.

K. L. Seyler, P. Rivera, H. Yu, N. P. Wilson, E. L. Ray, D. G. Mandrus, J. Yan, W. Yao, and X. Xu, “Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers,” Nature 567(7746), 66–70 (2019).
[Crossref] [PubMed]

J. S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D. Mandrus, D. Cobden, W. Yao, and X. Xu, “Interlayer exciton optoelectronics in a 2D heterostructure p-n junction,” Nano Lett. 17(2), 638–643 (2017).
[Crossref] [PubMed]

P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
[Crossref] [PubMed]

Rohlfing, M.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Ross, J. S.

J. S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D. Mandrus, D. Cobden, W. Yao, and X. Xu, “Interlayer exciton optoelectronics in a 2D heterostructure p-n junction,” Nano Lett. 17(2), 638–643 (2017).
[Crossref] [PubMed]

P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
[Crossref] [PubMed]

Rouleau, C. M.

K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
[Crossref] [PubMed]

Sahin, H.

S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. S. Li, A. Suslu, F. M. Peeters, Q. Liu, J. Li, and S. Tongay, “Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering,” Nano Lett. 15(3), 1660–1666 (2015).
[Crossref] [PubMed]

Salardenne, J.

E. Gourmelon, O. Lignier, H. Hadouda, G. Couturier, J. C. Bernede, J. Tedd, J. Pouzet, and J. Salardenne, “MS2 (M=W, Mo) photosensitive thin films for solar cells,” Sol. Energy Mater. Sol. Cells 46(2), 115–121 (1997).
[Crossref]

Schaibley, J.

J. S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D. Mandrus, D. Cobden, W. Yao, and X. Xu, “Interlayer exciton optoelectronics in a 2D heterostructure p-n junction,” Nano Lett. 17(2), 638–643 (2017).
[Crossref] [PubMed]

Schaibley, J. R.

P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
[Crossref] [PubMed]

Schmidt, R.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Schneider, R.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Schüller, C.

P. Steinleitner, P. Merkl, P. Nagler, J. Mornhinweg, C. Schüller, T. Korn, A. Chernikov, and R. Huber, “Direct observation of ultrafast exciton formation in a monolayer of WSe2,” Nano Lett. 17(3), 1455–1460 (2017).
[Crossref] [PubMed]

Seley, D. B.

D. B. Seley, M. Nath, and B. A. Parkinson, “ReSe2 nanotubes synthesized from sacrificial templates,” J. Mater. Chem. 19(11), 1532–1534 (2009).
[Crossref]

Seyler, K.

P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
[Crossref] [PubMed]

Seyler, K. L.

K. L. Seyler, P. Rivera, H. Yu, N. P. Wilson, E. L. Ray, D. G. Mandrus, J. Yan, W. Yao, and X. Xu, “Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers,” Nature 567(7746), 66–70 (2019).
[Crossref] [PubMed]

Shan, J.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Shi, S. F.

X. Hong, J. Kim, S. F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

Shi, Y.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Splendiani, A.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2.,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

Steinhoff, A.

B. Miller, A. Steinhoff, B. Pano, J. Klein, F. Jahnke, A. Holleitner, and U. Wurstbauer, “Long-lived direct and indirect interlayer excitons in van der Waals heterostructures,” Nano Lett. 17(9), 5229–5237 (2017).
[Crossref] [PubMed]

Steinleitner, P.

P. Steinleitner, P. Merkl, P. Nagler, J. Mornhinweg, C. Schüller, T. Korn, A. Chernikov, and R. Huber, “Direct observation of ultrafast exciton formation in a monolayer of WSe2,” Nano Lett. 17(3), 1455–1460 (2017).
[Crossref] [PubMed]

Stiehm, T.

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

Su, S. H.

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

Sun, L.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2.,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

Sun, Y.

X. Hong, J. Kim, S. F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Suslu, A.

S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. S. Li, A. Suslu, F. M. Peeters, Q. Liu, J. Li, and S. Tongay, “Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering,” Nano Lett. 15(3), 1660–1666 (2015).
[Crossref] [PubMed]

Tan, P. H.

H. Zhao, J. B. Wu, H. X. Zhong, Q. S. Guo, X. M. Wang, F. N. Xia, L. Yang, P. H. Tan, and H. Wang, “Interlayer interactions in anisotropic atomically thin rhenium diselenide,” Nano Res. 8(11), 3651–3661 (2015).
[Crossref]

Taniguchi, T.

J. S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D. Mandrus, D. Cobden, W. Yao, and X. Xu, “Interlayer exciton optoelectronics in a 2D heterostructure p-n junction,” Nano Lett. 17(2), 638–643 (2017).
[Crossref] [PubMed]

Tedd, J.

E. Gourmelon, O. Lignier, H. Hadouda, G. Couturier, J. C. Bernede, J. Tedd, J. Pouzet, and J. Salardenne, “MS2 (M=W, Mo) photosensitive thin films for solar cells,” Sol. Energy Mater. Sol. Cells 46(2), 115–121 (1997).
[Crossref]

Terrones, H.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

Terrones, M.

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

Tian, M.

K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
[Crossref] [PubMed]

Tongay, S.

S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. S. Li, A. Suslu, F. M. Peeters, Q. Liu, J. Li, and S. Tongay, “Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering,” Nano Lett. 15(3), 1660–1666 (2015).
[Crossref] [PubMed]

X. Hong, J. Kim, S. F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

S. Yang, S. Tongay, Y. Li, Q. Yue, J. B. Xia, S. S. Li, J. Li, and S. H. Wei, “Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors,” Nanoscale 6(13), 7226–7231 (2014).
[Crossref] [PubMed]

Tsai, D. S.

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

Tsai, M. L.

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

van der Zande, A. M.

C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p-n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. 9(9), 676–681 (2014).
[Crossref] [PubMed]

Wang, C.

S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. S. Li, A. Suslu, F. M. Peeters, Q. Liu, J. Li, and S. Tongay, “Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering,” Nano Lett. 15(3), 1660–1666 (2015).
[Crossref] [PubMed]

Wang, F.

X. Hong, J. Kim, S. F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2.,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

Wang, H.

H. Zhao, J. B. Wu, H. X. Zhong, Q. S. Guo, X. M. Wang, F. N. Xia, L. Yang, P. H. Tan, and H. Wang, “Interlayer interactions in anisotropic atomically thin rhenium diselenide,” Nano Res. 8(11), 3651–3661 (2015).
[Crossref]

Wang, K.

K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
[Crossref] [PubMed]

Wang, X. M.

H. Zhao, J. B. Wu, H. X. Zhong, Q. S. Guo, X. M. Wang, F. N. Xia, L. Yang, P. H. Tan, and H. Wang, “Interlayer interactions in anisotropic atomically thin rhenium diselenide,” Nano Res. 8(11), 3651–3661 (2015).
[Crossref]

Watanabe, K.

J. S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D. Mandrus, D. Cobden, W. Yao, and X. Xu, “Interlayer exciton optoelectronics in a 2D heterostructure p-n junction,” Nano Lett. 17(2), 638–643 (2017).
[Crossref] [PubMed]

Wei, S. H.

S. Yang, S. Tongay, Y. Li, Q. Yue, J. B. Xia, S. S. Li, J. Li, and S. H. Wei, “Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors,” Nanoscale 6(13), 7226–7231 (2014).
[Crossref] [PubMed]

Weiss, N.

R. Cheng, S. Jiang, Y. Chen, Y. Liu, N. Weiss, H. C. Cheng, H. Wu, Y. Huang, and X. Duan, “Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics,” Nat. Commun. 5(1), 5143 (2014).
[Crossref] [PubMed]

Weiss, N. O.

Y. Liu, N. O. Weiss, X. Duan, H. Cheng, Y. Huang, and X. Duan, “Van der Waals heterostructures and devices,” Nat. Rev. Mater. 1(9), 16042 (2016).
[Crossref]

Wells, S. A.

S. Cui, H. Pu, S. A. Wells, Z. Wen, S. Mao, J. Chang, M. C. Hersam, and J. Chen, “Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors,” Nat. Commun. 6(1), 8632 (2015).
[Crossref] [PubMed]

Wen, Z.

S. Cui, H. Pu, S. A. Wells, Z. Wen, S. Mao, J. Chang, M. C. Hersam, and J. Chen, “Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors,” Nat. Commun. 6(1), 8632 (2015).
[Crossref] [PubMed]

Whitwick, M. B.

B. Radisavljevic, M. B. Whitwick, and A. Kis, “Integrated circuits and logic operations based on single-layer MoS2.,” ACS Nano 5(12), 9934–9938 (2011).
[Crossref] [PubMed]

Wilson, N. P.

K. L. Seyler, P. Rivera, H. Yu, N. P. Wilson, E. L. Ray, D. G. Mandrus, J. Yan, W. Yao, and X. Xu, “Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers,” Nature 567(7746), 66–70 (2019).
[Crossref] [PubMed]

Wolverson, D.

D. Wolverson, S. Crampin, A. S. Kazemi, A. Ilie, and S. J. Bending, “Raman spectra of monolayer, few-layer, and bulk ReSe₂: an anisotropic layered semiconductor,” ACS Nano 8(11), 11154–11164 (2014).
[Crossref] [PubMed]

Wu, C. I.

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

Wu, H.

R. Cheng, S. Jiang, Y. Chen, Y. Liu, N. Weiss, H. C. Cheng, H. Wu, Y. Huang, and X. Duan, “Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics,” Nat. Commun. 5(1), 5143 (2014).
[Crossref] [PubMed]

Wu, J.

X. Hong, J. Kim, S. F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

Wu, J. B.

H. Zhao, J. B. Wu, H. X. Zhong, Q. S. Guo, X. M. Wang, F. N. Xia, L. Yang, P. H. Tan, and H. Wang, “Interlayer interactions in anisotropic atomically thin rhenium diselenide,” Nano Res. 8(11), 3651–3661 (2015).
[Crossref]

Wu, S.

P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
[Crossref] [PubMed]

Wurstbauer, U.

B. Miller, A. Steinhoff, B. Pano, J. Klein, F. Jahnke, A. Holleitner, and U. Wurstbauer, “Long-lived direct and indirect interlayer excitons in van der Waals heterostructures,” Nano Lett. 17(9), 5229–5237 (2017).
[Crossref] [PubMed]

Xia, F. N.

H. Zhao, J. B. Wu, H. X. Zhong, Q. S. Guo, X. M. Wang, F. N. Xia, L. Yang, P. H. Tan, and H. Wang, “Interlayer interactions in anisotropic atomically thin rhenium diselenide,” Nano Res. 8(11), 3651–3661 (2015).
[Crossref]

Xia, J. B.

S. Yang, S. Tongay, Y. Li, Q. Yue, J. B. Xia, S. S. Li, J. Li, and S. H. Wei, “Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors,” Nanoscale 6(13), 7226–7231 (2014).
[Crossref] [PubMed]

Xiao, K.

K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
[Crossref] [PubMed]

Xu, X.

K. L. Seyler, P. Rivera, H. Yu, N. P. Wilson, E. L. Ray, D. G. Mandrus, J. Yan, W. Yao, and X. Xu, “Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers,” Nature 567(7746), 66–70 (2019).
[Crossref] [PubMed]

J. S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D. Mandrus, D. Cobden, W. Yao, and X. Xu, “Interlayer exciton optoelectronics in a 2D heterostructure p-n junction,” Nano Lett. 17(2), 638–643 (2017).
[Crossref] [PubMed]

P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
[Crossref] [PubMed]

Yan, J.

K. L. Seyler, P. Rivera, H. Yu, N. P. Wilson, E. L. Ray, D. G. Mandrus, J. Yan, W. Yao, and X. Xu, “Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers,” Nature 567(7746), 66–70 (2019).
[Crossref] [PubMed]

J. S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D. Mandrus, D. Cobden, W. Yao, and X. Xu, “Interlayer exciton optoelectronics in a 2D heterostructure p-n junction,” Nano Lett. 17(2), 638–643 (2017).
[Crossref] [PubMed]

P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
[Crossref] [PubMed]

Yang, L.

H. Zhao, J. B. Wu, H. X. Zhong, Q. S. Guo, X. M. Wang, F. N. Xia, L. Yang, P. H. Tan, and H. Wang, “Interlayer interactions in anisotropic atomically thin rhenium diselenide,” Nano Res. 8(11), 3651–3661 (2015).
[Crossref]

Yang, S.

S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. S. Li, A. Suslu, F. M. Peeters, Q. Liu, J. Li, and S. Tongay, “Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering,” Nano Lett. 15(3), 1660–1666 (2015).
[Crossref] [PubMed]

S. Yang, S. Tongay, Y. Li, Q. Yue, J. B. Xia, S. S. Li, J. Li, and S. H. Wei, “Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors,” Nanoscale 6(13), 7226–7231 (2014).
[Crossref] [PubMed]

Yang, Y.

B. W. H. Baugher, H. O. H. Churchill, Y. Yang, and P. Jarillo-Herrero, “Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide,” Nat. Nanotechnol. 9(4), 262–267 (2014).
[Crossref] [PubMed]

Yao, W.

K. L. Seyler, P. Rivera, H. Yu, N. P. Wilson, E. L. Ray, D. G. Mandrus, J. Yan, W. Yao, and X. Xu, “Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers,” Nature 567(7746), 66–70 (2019).
[Crossref] [PubMed]

J. S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D. Mandrus, D. Cobden, W. Yao, and X. Xu, “Interlayer exciton optoelectronics in a 2D heterostructure p-n junction,” Nano Lett. 17(2), 638–643 (2017).
[Crossref] [PubMed]

P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
[Crossref] [PubMed]

Yin, Z.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Yoon, M.

K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
[Crossref] [PubMed]

Yu, H.

K. L. Seyler, P. Rivera, H. Yu, N. P. Wilson, E. L. Ray, D. G. Mandrus, J. Yan, W. Yao, and X. Xu, “Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers,” Nature 567(7746), 66–70 (2019).
[Crossref] [PubMed]

J. S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D. Mandrus, D. Cobden, W. Yao, and X. Xu, “Interlayer exciton optoelectronics in a 2D heterostructure p-n junction,” Nano Lett. 17(2), 638–643 (2017).
[Crossref] [PubMed]

Yue, Q.

S. Yang, S. Tongay, Y. Li, Q. Yue, J. B. Xia, S. S. Li, J. Li, and S. H. Wei, “Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors,” Nanoscale 6(13), 7226–7231 (2014).
[Crossref] [PubMed]

Yun, J. M.

J. M. Yun, Y. J. Noh, C. H. Lee, S. I. Na, S. Lee, S. M. Jo, H. I. Joh, and D. Y. Kim, “Exfoliated and partially oxidized MoS₂ nanosheets by one-pot reaction for efficient and stable organic solar cells,” Small 10(12), 2319–2324 (2014).
[Crossref] [PubMed]

Zeng, X. C.

M. Li, M. Z. Bellus, J. Dai, L. Ma, X. Li, H. Zhao, and X. C. Zeng, “A type-I van der Waals heterobilayer of WSe2/MoTe2,” Nanotechnology 29(33), 335203 (2018).
[Crossref] [PubMed]

Zhang, H.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Zhang, Q.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

Zhang, Y.

X. Hong, J. Kim, S. F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

X. Hong, J. Kim, S. F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2.,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

Zhao, H.

M. Li, M. Z. Bellus, J. Dai, L. Ma, X. Li, H. Zhao, and X. C. Zeng, “A type-I van der Waals heterobilayer of WSe2/MoTe2,” Nanotechnology 29(33), 335203 (2018).
[Crossref] [PubMed]

F. Ceballos and H. Zhao, “Ultrafast laser spectroscopy of two-dimensional materials beyond graphene,” Adv. Funct. Mater. 27(19), 1604509 (2017).
[Crossref]

K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
[Crossref] [PubMed]

F. Ceballos, Q. Cui, M. Z. Bellus, and H. Zhao, “Exciton formation in monolayer transition metal dichalcogenides,” Nanoscale 8(22), 11681–11688 (2016).
[Crossref] [PubMed]

F. Ceballos, M. Z. Bellus, H. Y. Chiu, and H. Zhao, “Probing charge transfer excitons in a MoSe2-WS2 van der Waals heterostructure,” Nanoscale 7(41), 17523–17528 (2015).
[Crossref] [PubMed]

H. Zhao, J. B. Wu, H. X. Zhong, Q. S. Guo, X. M. Wang, F. N. Xia, L. Yang, P. H. Tan, and H. Wang, “Interlayer interactions in anisotropic atomically thin rhenium diselenide,” Nano Res. 8(11), 3651–3661 (2015).
[Crossref]

F. Ceballos, M. Z. Bellus, H. Y. Chiu, and H. Zhao, “Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der Waals heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
[Crossref] [PubMed]

Zhong, H. X.

H. Zhao, J. B. Wu, H. X. Zhong, Q. S. Guo, X. M. Wang, F. N. Xia, L. Yang, P. H. Tan, and H. Wang, “Interlayer interactions in anisotropic atomically thin rhenium diselenide,” Nano Res. 8(11), 3651–3661 (2015).
[Crossref]

ACS Nano (7)

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6(1), 74–80 (2012).
[Crossref] [PubMed]

M. L. Tsai, S. H. Su, J. K. Chang, D. S. Tsai, C. H. Chen, C. I. Wu, L. J. Li, L. J. Chen, and J. H. He, “Monolayer MoS2 heterojunction solar cells,” ACS Nano 8(8), 8317–8322 (2014).
[Crossref] [PubMed]

B. Radisavljevic, M. B. Whitwick, and A. Kis, “Integrated circuits and logic operations based on single-layer MoS2.,” ACS Nano 5(12), 9934–9938 (2011).
[Crossref] [PubMed]

D. Wolverson, S. Crampin, A. S. Kazemi, A. Ilie, and S. J. Bending, “Raman spectra of monolayer, few-layer, and bulk ReSe₂: an anisotropic layered semiconductor,” ACS Nano 8(11), 11154–11164 (2014).
[Crossref] [PubMed]

A. L. Elías, N. Perea-López, A. Castro-Beltrán, A. Berkdemir, R. Lv, S. Feng, A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, H. R. Gutiérrez, N. R. Pradhan, L. Balicas, T. E. Mallouk, F. López-Urías, H. Terrones, and M. Terrones, “Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers,” ACS Nano 7(6), 5235–5242 (2013).
[Crossref] [PubMed]

F. Ceballos, M. Z. Bellus, H. Y. Chiu, and H. Zhao, “Ultrafast charge separation and indirect exciton formation in a MoS2-MoSe2 van der Waals heterostructure,” ACS Nano 8(12), 12717–12724 (2014).
[Crossref] [PubMed]

K. Wang, B. Huang, M. Tian, F. Ceballos, M. W. Lin, M. Mahjouri-Samani, A. Boulesbaa, A. A. Puretzky, C. M. Rouleau, M. Yoon, H. Zhao, K. Xiao, G. Duscher, and D. B. Geohegan, “Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy,” ACS Nano 10(7), 6612–6622 (2016).
[Crossref] [PubMed]

Adv. Funct. Mater. (1)

F. Ceballos and H. Zhao, “Ultrafast laser spectroscopy of two-dimensional materials beyond graphene,” Adv. Funct. Mater. 27(19), 1604509 (2017).
[Crossref]

J. Alloys Compd. (1)

C. H. Ho and C. E. Huang, “Optical property of the near band-edge transitions in rhenium disulfide and diselenide,” J. Alloys Compd. 383(1-2), 74–79 (2004).
[Crossref]

J. Appl. Phys. (1)

K. Friemelt, M. C. Luxsteiner, and E. Bucher, “Optical properties of the layered transition-metal-dichalcogenide ReS2: anisotropy in the van der Waals plane,” J. Appl. Phys. 74(8), 5266–5268 (1993).
[Crossref]

J. Mater. Chem. (1)

D. B. Seley, M. Nath, and B. A. Parkinson, “ReSe2 nanotubes synthesized from sacrificial templates,” J. Mater. Chem. 19(11), 1532–1534 (2009).
[Crossref]

J. Phys. Chem. (1)

K. K. Kam and B. A. Parkinson, “Detailed photocurrent spectroscopy of the semiconducting group-Vi transition-metal dichalcogenides,” J. Phys. Chem. 86(4), 463–467 (1982).
[Crossref]

Nano Lett. (7)

A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, “Highly anisotropic in-plane excitons in atomically thin and bulk like 1T′-ReSe2,” Nano Lett. 17(5), 3202–3207 (2017).
[Crossref] [PubMed]

S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S. S. Li, A. Suslu, F. M. Peeters, Q. Liu, J. Li, and S. Tongay, “Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering,” Nano Lett. 15(3), 1660–1666 (2015).
[Crossref] [PubMed]

H. M. Hill, A. F. Rigosi, K. T. Rim, G. W. Flynn, and T. F. Heinz, “Band alignment in MoS2/WS2 transition metal dichalcogenide heterostructures probed by scanning tunneling microscopy and spectroscopy,” Nano Lett. 16(8), 4831–4837 (2016).
[Crossref] [PubMed]

B. Miller, A. Steinhoff, B. Pano, J. Klein, F. Jahnke, A. Holleitner, and U. Wurstbauer, “Long-lived direct and indirect interlayer excitons in van der Waals heterostructures,” Nano Lett. 17(9), 5229–5237 (2017).
[Crossref] [PubMed]

J. S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D. Mandrus, D. Cobden, W. Yao, and X. Xu, “Interlayer exciton optoelectronics in a 2D heterostructure p-n junction,” Nano Lett. 17(2), 638–643 (2017).
[Crossref] [PubMed]

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2.,” Nano Lett. 10(4), 1271–1275 (2010).
[Crossref] [PubMed]

P. Steinleitner, P. Merkl, P. Nagler, J. Mornhinweg, C. Schüller, T. Korn, A. Chernikov, and R. Huber, “Direct observation of ultrafast exciton formation in a monolayer of WSe2,” Nano Lett. 17(3), 1455–1460 (2017).
[Crossref] [PubMed]

Nano Res. (1)

H. Zhao, J. B. Wu, H. X. Zhong, Q. S. Guo, X. M. Wang, F. N. Xia, L. Yang, P. H. Tan, and H. Wang, “Interlayer interactions in anisotropic atomically thin rhenium diselenide,” Nano Res. 8(11), 3651–3661 (2015).
[Crossref]

Nanoscale (3)

S. Yang, S. Tongay, Y. Li, Q. Yue, J. B. Xia, S. S. Li, J. Li, and S. H. Wei, “Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors,” Nanoscale 6(13), 7226–7231 (2014).
[Crossref] [PubMed]

F. Ceballos, M. Z. Bellus, H. Y. Chiu, and H. Zhao, “Probing charge transfer excitons in a MoSe2-WS2 van der Waals heterostructure,” Nanoscale 7(41), 17523–17528 (2015).
[Crossref] [PubMed]

F. Ceballos, Q. Cui, M. Z. Bellus, and H. Zhao, “Exciton formation in monolayer transition metal dichalcogenides,” Nanoscale 8(22), 11681–11688 (2016).
[Crossref] [PubMed]

Nanotechnology (1)

M. Li, M. Z. Bellus, J. Dai, L. Ma, X. Li, H. Zhao, and X. C. Zeng, “A type-I van der Waals heterobilayer of WSe2/MoTe2,” Nanotechnology 29(33), 335203 (2018).
[Crossref] [PubMed]

Nat. Commun. (3)

P. Rivera, J. R. Schaibley, A. M. Jones, J. S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G. Clark, N. J. Ghimire, J. Yan, D. G. Mandrus, W. Yao, and X. Xu, “Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures,” Nat. Commun. 6(1), 6242 (2015).
[Crossref] [PubMed]

R. Cheng, S. Jiang, Y. Chen, Y. Liu, N. Weiss, H. C. Cheng, H. Wu, Y. Huang, and X. Duan, “Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics,” Nat. Commun. 5(1), 5143 (2014).
[Crossref] [PubMed]

S. Cui, H. Pu, S. A. Wells, Z. Wen, S. Mao, J. Chang, M. C. Hersam, and J. Chen, “Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors,” Nat. Commun. 6(1), 8632 (2015).
[Crossref] [PubMed]

Nat. Nanotechnol. (4)

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2.,” Nat. Nanotechnol. 8(7), 497–501 (2013).
[Crossref] [PubMed]

B. W. H. Baugher, H. O. H. Churchill, Y. Yang, and P. Jarillo-Herrero, “Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide,” Nat. Nanotechnol. 9(4), 262–267 (2014).
[Crossref] [PubMed]

C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, “Atomically thin p-n junctions with van der Waals heterointerfaces,” Nat. Nanotechnol. 9(9), 676–681 (2014).
[Crossref] [PubMed]

X. Hong, J. Kim, S. F. Shi, Y. Zhang, C. Jin, Y. Sun, S. Tongay, J. Wu, Y. Zhang, and F. Wang, “Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures,” Nat. Nanotechnol. 9(9), 682–686 (2014).
[Crossref] [PubMed]

Nat. Rev. Mater. (1)

Y. Liu, N. O. Weiss, X. Duan, H. Cheng, Y. Huang, and X. Duan, “Van der Waals heterostructures and devices,” Nat. Rev. Mater. 1(9), 16042 (2016).
[Crossref]

Nature (2)

A. K. Geim and I. V. Grigorieva, “Van der Waals heterostructures,” Nature 499(7459), 419–425 (2013).
[Crossref] [PubMed]

K. L. Seyler, P. Rivera, H. Yu, N. P. Wilson, E. L. Ray, D. G. Mandrus, J. Yan, W. Yao, and X. Xu, “Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers,” Nature 567(7746), 66–70 (2019).
[Crossref] [PubMed]

Phys. Rev. Lett. (1)

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS₂: a new direct-gap semiconductor,” Phys. Rev. Lett. 105(13), 136805 (2010).
[Crossref] [PubMed]

Science (2)

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306(5696), 666–669 (2004).
[Crossref] [PubMed]

K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, “2D materials and van der Waals heterostructures,” Science 353(6298), aac9439 (2016).
[Crossref] [PubMed]

Small (1)

J. M. Yun, Y. J. Noh, C. H. Lee, S. I. Na, S. Lee, S. M. Jo, H. I. Joh, and D. Y. Kim, “Exfoliated and partially oxidized MoS₂ nanosheets by one-pot reaction for efficient and stable organic solar cells,” Small 10(12), 2319–2324 (2014).
[Crossref] [PubMed]

Sol. Energy Mater. Sol. Cells (1)

E. Gourmelon, O. Lignier, H. Hadouda, G. Couturier, J. C. Bernede, J. Tedd, J. Pouzet, and J. Salardenne, “MS2 (M=W, Mo) photosensitive thin films for solar cells,” Sol. Energy Mater. Sol. Cells 46(2), 115–121 (1997).
[Crossref]

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1
Fig. 1 Schematics of the differential reflection setup.
Fig. 2
Fig. 2 (a) Optical microscope image of the ReSe2 film and MoS2-ReSe2 heterostructure, the heterostructure is in the red dashed box. (b) Optical microscope image of the monolayer MoS2 flake. (c) The predicted band alignment of the MoS2-ReSe2 heterostructure. The numbers are the energy differences from the vacuum level (in electron volts) according to the calculation. (d) Photoluminescence spectra of the samples.
Fig. 3
Fig. 3 Photocarrier dynamics in individual monolayers. (a) Differential reflection signal of monolayer MoS2 measured with a 410 nm pump and a 672 nm probe pulses. The red line is a fit by a bi-exponential function. The inset provides a closer look at the data near zero probe delay. (b) Differential reflection signals of monolayer ReSe2 measured with a 672 nm pump and an 820 nm probe pulses. The red line is a fit by an exponential function.
Fig. 4
Fig. 4 Electron transfer from ReSe2 to MoS2. (a) Black squares show the differential reflection signal from the MoS2-ReS2 heterostructure sample with an 820 nm pump and a 672 nm probe pulses. The red line is a fit. The purple circles and the blue triangles are signals from the MoS2 and ReS2 monolayer samples under the same conditions, respectively, showing lack of signal from these samples, as expected. (b) Same as (a) but over a shorter time range to show the initial dynamics.
Fig. 5
Fig. 5 Hole transfer from MoS2 to ReSe2. (a) Differential reflection signals of the heterostructure sample measured with a 672 nm pump and an 820 nm probe pulses. The red line is a fit by an exponential function. (b) The same as (a) but in a shorter time range. (c) Peak differential reflection signal from the heterostructure as a function of the pump wavelength (black squares) and the PL spectrum of the MoS2 (blue curve).

Metrics