Abstract

We demonstrate high-bandwidth O-band Mach–Zehnder modulators with indium phosphide-on-silicon (InP-on-Si) capacitive phase shifters that are compatible with heterogeneous laser fabrication processes. An electro-optic conversion efficiency of 1.3 Vcm and a 3 dB bandwidth of up to 30 GHz was observed for a phase modulator length of 250 μm at a 0 V bias. Open eye patterns were observed at up to 25 Gb/s.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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    [Crossref]
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    [Crossref]
  22. H. Duprez, A. Descos, T. Ferrotti, C. Sciancalepore, C. Jany, K. Hassan, C. Seassal, S. Menezo, and B. B. Bakir, “1310 nm hybrid InP/InGaAsP on silicon distributed feedback laser with high side-mode suppression ratio,” Opt. Express 23, 8489–8497 (2015).
    [PubMed]
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    [Crossref]
  24. X. Huang, D. Liang, C. Zhang, G. Kurczveil, X. Li, J. Zhang, M. Fiorentino, and R. Beausoleil, “Heterogeneous MOS microring resonators,” in IPC, (2017), pp. 121–122.
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2018 (4)

2017 (3)

J.-H. Han, F. Boeuf, J. Fujikata, S. Takahashi, S. Takagi, and M. Takenaka, “Efficient low-loss InGaAsP/Si hybrid MOS optical modulator,” Nature Photonics 11, 486 (2017).
[Crossref]

T. Hiraki, T. Aihara, K. Hasebe, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, and S. Matsuo, “Heterogeneously integrated III–V/Si MOS capacitor Mach-Zehnder modulator,” Nature Photonics 11, 482 (2017).
[Crossref]

Z. Yong, W. D. Sacher, Y. Huang, J. C. Mikkelsen, Y. Yang, X. Luo, P. Dumais, D. Goodwill, H. Bahrami, P. G.-Q. Lo, E. Bernier, and J. K. S. Poon, “U-shaped PN junctions for efficient silicon Mach-Zehnder and microring modulators in the O-band,” Opt. Express 25, 8425–8439 (2017).
[Crossref] [PubMed]

2016 (3)

D. Liang, X. Huang, G. Kurczveil, M. Fiorentino, and R. Beausoleil, “Integrated finely tunable microring laser on silicon,” Nature Photonics 10, 719–722 (2016).
[Crossref]

F. Boeuf, S. Crémer, E. Temporiti, M. Feré, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. L. Maitre, M. Traldi, and L. Maggi, “Silicon photonics R&D and manufacturing on 300-mm wafer platform,” Journal of Lightwave Technology 34, 286–295 (2016).
[Crossref]

J. Fujikata, S. Takahashi, M. Takahashi, M. Noguchi, T. Nakamura, and Y. Arakawa, “High-performance MOS-capacitor-type Si optical modulator and surface-illumination-type Ge photodetector for optical interconnection,” Japanese Journal of Applied Physics 55, 04EC01 (2016).
[Crossref]

2015 (2)

S. Koeber, R. Palmer, M. Lauermann, W. Heni, D. L. Elder, D. Korn, M. Woessner, L. Alloatti, S. Koenig, P. C. Schindler, and et al., “Femtojoule electro-optic modulation using a silicon–organic hybrid device,” Light: Science & Applications 4, e255(2015).
[Crossref]

H. Duprez, A. Descos, T. Ferrotti, C. Sciancalepore, C. Jany, K. Hassan, C. Seassal, S. Menezo, and B. B. Bakir, “1310 nm hybrid InP/InGaAsP on silicon distributed feedback laser with high side-mode suppression ratio,” Opt. Express 23, 8489–8497 (2015).
[PubMed]

2014 (2)

B. B. Bakir, C. Sciancalepore, A. Descos, H. Duprez, D. Bordel, L. Sanchez, C. Jany, K. Hassan, P. Brianceau, V. Carron, and S. Menezo, “Heterogeneously integrated III-V on silicon lasers,” ECS Transactions 64, 211–223 (2014).
[Crossref]

L. Alloatti, R. Palmer, S. Diebold, K. P. Pahl, B. Chen, R. Dinu, M. Fournier, J.-M. Fedeli, T. Zwick, W. Freude, C. Koos, and J. Leuthold, “100 GHz silicon–organic hybrid modulator,” Light: Science & Applications 3, e173(2014).
[Crossref]

2010 (1)

G. T. Reed, G. Mashanovich, F. Gardes, and D. Thomson, “Silicon optical modulators,” Nature Photonics 4, 518–526 (2010).
[Crossref]

2001 (1)

I. Vurgaftman, J. Meyer, and L. Ram-Mohan, “Band parameters for III-V compound semiconductors and their alloys,” Journal of Applied Physics 89, 5815–5875 (2001).
[Crossref]

1996 (1)

L. Chusseau, P. Martin, C. Brasseur, C. Alibert, P. Hervé, P. Arguel, F. Lozes-Dupuy, and E. V. K. Rao, “Carrier-induced change due to doping in refractive index of InP: measurements at 1.3 and 1.5 μm,” Applied Physics Letters 69, 3054–3056 (1996).
[Crossref]

1990 (1)

B. R. Bennett, R. A. Soref, and J. A. D. Alamo, “Carrier-induced change in refractive index of InP, GaAs and InGaAsP,” Journal of Quantum Electronics 26, 113–122 (1990).
[Crossref]

1987 (1)

R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE Journal of Quantum Electronics 23, 123–129 (1987).
[Crossref]

1983 (1)

O. K. Kim and W. A. Bonner, “Infrared reflectance and absorption of N-type InP,” Journal of Electronic Materials 12, 827–836 (1983).
[Crossref]

Aihara, T.

T. Hiraki, T. Aihara, K. Hasebe, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, and S. Matsuo, “Heterogeneously integrated III–V/Si MOS capacitor Mach-Zehnder modulator,” Nature Photonics 11, 482 (2017).
[Crossref]

Alamo, J. A. D.

B. R. Bennett, R. A. Soref, and J. A. D. Alamo, “Carrier-induced change in refractive index of InP, GaAs and InGaAsP,” Journal of Quantum Electronics 26, 113–122 (1990).
[Crossref]

Alibert, C.

L. Chusseau, P. Martin, C. Brasseur, C. Alibert, P. Hervé, P. Arguel, F. Lozes-Dupuy, and E. V. K. Rao, “Carrier-induced change due to doping in refractive index of InP: measurements at 1.3 and 1.5 μm,” Applied Physics Letters 69, 3054–3056 (1996).
[Crossref]

Alloatti, L.

S. Koeber, R. Palmer, M. Lauermann, W. Heni, D. L. Elder, D. Korn, M. Woessner, L. Alloatti, S. Koenig, P. C. Schindler, and et al., “Femtojoule electro-optic modulation using a silicon–organic hybrid device,” Light: Science & Applications 4, e255(2015).
[Crossref]

L. Alloatti, R. Palmer, S. Diebold, K. P. Pahl, B. Chen, R. Dinu, M. Fournier, J.-M. Fedeli, T. Zwick, W. Freude, C. Koos, and J. Leuthold, “100 GHz silicon–organic hybrid modulator,” Light: Science & Applications 3, e173(2014).
[Crossref]

Al-Rubaye, H.

Altenhain, L.

S. Wolf, H. Zwickel, W. Hartmann, M. Lauermann, Y. Kutuvantavida, C. Kieninger, L. Altenhain, R. Schmid, J. Luo, A. K.-Y. Jen, and et al., “Silicon-organic hybrid (SOH) Mach-Zehnder modulators for 100 Gbit/s on-off keying,” Scientific Reports 8, 2598 (2018).
[Crossref] [PubMed]

Appel, C.

M. Webster, C. Appel, P. Gothoskar, S. Sunder, B. Dama, and K. Shastri, “Silicon photonic modulator based on a MOS-capacitor and a CMOS driver,” in CSICs, (2014), pp. 1–4.

Arakawa, Y.

J. Fujikata, S. Takahashi, M. Takahashi, M. Noguchi, T. Nakamura, and Y. Arakawa, “High-performance MOS-capacitor-type Si optical modulator and surface-illumination-type Ge photodetector for optical interconnection,” Japanese Journal of Applied Physics 55, 04EC01 (2016).
[Crossref]

Arguel, P.

L. Chusseau, P. Martin, C. Brasseur, C. Alibert, P. Hervé, P. Arguel, F. Lozes-Dupuy, and E. V. K. Rao, “Carrier-induced change due to doping in refractive index of InP: measurements at 1.3 and 1.5 μm,” Applied Physics Letters 69, 3054–3056 (1996).
[Crossref]

Bahrami, H.

Bakir, B. B.

H. Duprez, A. Descos, T. Ferrotti, C. Sciancalepore, C. Jany, K. Hassan, C. Seassal, S. Menezo, and B. B. Bakir, “1310 nm hybrid InP/InGaAsP on silicon distributed feedback laser with high side-mode suppression ratio,” Opt. Express 23, 8489–8497 (2015).
[PubMed]

B. B. Bakir, C. Sciancalepore, A. Descos, H. Duprez, D. Bordel, L. Sanchez, C. Jany, K. Hassan, P. Brianceau, V. Carron, and S. Menezo, “Heterogeneously integrated III-V on silicon lasers,” ECS Transactions 64, 211–223 (2014).
[Crossref]

Baudot, C.

F. Boeuf, S. Crémer, E. Temporiti, M. Feré, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. L. Maitre, M. Traldi, and L. Maggi, “Silicon photonics R&D and manufacturing on 300-mm wafer platform,” Journal of Lightwave Technology 34, 286–295 (2016).
[Crossref]

Beausoleil, R.

D. Liang, X. Huang, G. Kurczveil, M. Fiorentino, and R. Beausoleil, “Integrated finely tunable microring laser on silicon,” Nature Photonics 10, 719–722 (2016).
[Crossref]

X. Huang, D. Liang, C. Zhang, G. Kurczveil, X. Li, J. Zhang, M. Fiorentino, and R. Beausoleil, “Heterogeneous MOS microring resonators,” in IPC, (2017), pp. 121–122.

Bennett, B.

R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE Journal of Quantum Electronics 23, 123–129 (1987).
[Crossref]

Bennett, B. R.

B. R. Bennett, R. A. Soref, and J. A. D. Alamo, “Carrier-induced change in refractive index of InP, GaAs and InGaAsP,” Journal of Quantum Electronics 26, 113–122 (1990).
[Crossref]

Bernier, E.

Bilondeau, P.

S. Menezo, T. Thiessen, P. Grosse, J. K. S. Poon, C. Jany, J. D. Fonseca, B. Szelag, B. Charbonnier, G. El-Zammar, O. Lemonnier, P. Bilondeau, S. Malhouitre, B. Montmayeul, and L. Sanchez, “High-speed heterogeneous InP-on-Si capacitive phase modulators,” in Optical Fiber Communication Conference, (Optical Society of America, 2018), p. Tu3K.4.

Blaicher, M.

Boeuf, F.

J.-H. Han, F. Boeuf, J. Fujikata, S. Takahashi, S. Takagi, and M. Takenaka, “Efficient low-loss InGaAsP/Si hybrid MOS optical modulator,” Nature Photonics 11, 486 (2017).
[Crossref]

F. Boeuf, S. Crémer, E. Temporiti, M. Feré, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. L. Maitre, M. Traldi, and L. Maggi, “Silicon photonics R&D and manufacturing on 300-mm wafer platform,” Journal of Lightwave Technology 34, 286–295 (2016).
[Crossref]

Bonner, W. A.

O. K. Kim and W. A. Bonner, “Infrared reflectance and absorption of N-type InP,” Journal of Electronic Materials 12, 827–836 (1983).
[Crossref]

Bordel, D.

B. B. Bakir, C. Sciancalepore, A. Descos, H. Duprez, D. Bordel, L. Sanchez, C. Jany, K. Hassan, P. Brianceau, V. Carron, and S. Menezo, “Heterogeneously integrated III-V on silicon lasers,” ECS Transactions 64, 211–223 (2014).
[Crossref]

Brasseur, C.

L. Chusseau, P. Martin, C. Brasseur, C. Alibert, P. Hervé, P. Arguel, F. Lozes-Dupuy, and E. V. K. Rao, “Carrier-induced change due to doping in refractive index of InP: measurements at 1.3 and 1.5 μm,” Applied Physics Letters 69, 3054–3056 (1996).
[Crossref]

Brianceau, P.

B. B. Bakir, C. Sciancalepore, A. Descos, H. Duprez, D. Bordel, L. Sanchez, C. Jany, K. Hassan, P. Brianceau, V. Carron, and S. Menezo, “Heterogeneously integrated III-V on silicon lasers,” ECS Transactions 64, 211–223 (2014).
[Crossref]

Carron, V.

B. B. Bakir, C. Sciancalepore, A. Descos, H. Duprez, D. Bordel, L. Sanchez, C. Jany, K. Hassan, P. Brianceau, V. Carron, and S. Menezo, “Heterogeneously integrated III-V on silicon lasers,” ECS Transactions 64, 211–223 (2014).
[Crossref]

Charbonnier, B.

S. Menezo, T. Thiessen, P. Grosse, J. K. S. Poon, C. Jany, J. D. Fonseca, B. Szelag, B. Charbonnier, G. El-Zammar, O. Lemonnier, P. Bilondeau, S. Malhouitre, B. Montmayeul, and L. Sanchez, “High-speed heterogeneous InP-on-Si capacitive phase modulators,” in Optical Fiber Communication Conference, (Optical Society of America, 2018), p. Tu3K.4.

Chen, B.

L. Alloatti, R. Palmer, S. Diebold, K. P. Pahl, B. Chen, R. Dinu, M. Fournier, J.-M. Fedeli, T. Zwick, W. Freude, C. Koos, and J. Leuthold, “100 GHz silicon–organic hybrid modulator,” Light: Science & Applications 3, e173(2014).
[Crossref]

Chusseau, L.

L. Chusseau, P. Martin, C. Brasseur, C. Alibert, P. Hervé, P. Arguel, F. Lozes-Dupuy, and E. V. K. Rao, “Carrier-induced change due to doping in refractive index of InP: measurements at 1.3 and 1.5 μm,” Applied Physics Letters 69, 3054–3056 (1996).
[Crossref]

Crémer, S.

F. Boeuf, S. Crémer, E. Temporiti, M. Feré, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. L. Maitre, M. Traldi, and L. Maggi, “Silicon photonics R&D and manufacturing on 300-mm wafer platform,” Journal of Lightwave Technology 34, 286–295 (2016).
[Crossref]

Dallo, C.

Dalton, L. R.

Dama, B.

M. Webster, C. Appel, P. Gothoskar, S. Sunder, B. Dama, and K. Shastri, “Silicon photonic modulator based on a MOS-capacitor and a CMOS driver,” in CSICs, (2014), pp. 1–4.

DeRose, C. T.

Descos, A.

H. Duprez, A. Descos, T. Ferrotti, C. Sciancalepore, C. Jany, K. Hassan, C. Seassal, S. Menezo, and B. B. Bakir, “1310 nm hybrid InP/InGaAsP on silicon distributed feedback laser with high side-mode suppression ratio,” Opt. Express 23, 8489–8497 (2015).
[PubMed]

B. B. Bakir, C. Sciancalepore, A. Descos, H. Duprez, D. Bordel, L. Sanchez, C. Jany, K. Hassan, P. Brianceau, V. Carron, and S. Menezo, “Heterogeneously integrated III-V on silicon lasers,” ECS Transactions 64, 211–223 (2014).
[Crossref]

Diebold, S.

L. Alloatti, R. Palmer, S. Diebold, K. P. Pahl, B. Chen, R. Dinu, M. Fournier, J.-M. Fedeli, T. Zwick, W. Freude, C. Koos, and J. Leuthold, “100 GHz silicon–organic hybrid modulator,” Light: Science & Applications 3, e173(2014).
[Crossref]

Dinu, R.

L. Alloatti, R. Palmer, S. Diebold, K. P. Pahl, B. Chen, R. Dinu, M. Fournier, J.-M. Fedeli, T. Zwick, W. Freude, C. Koos, and J. Leuthold, “100 GHz silicon–organic hybrid modulator,” Light: Science & Applications 3, e173(2014).
[Crossref]

Dumais, P.

Duprez, H.

H. Duprez, A. Descos, T. Ferrotti, C. Sciancalepore, C. Jany, K. Hassan, C. Seassal, S. Menezo, and B. B. Bakir, “1310 nm hybrid InP/InGaAsP on silicon distributed feedback laser with high side-mode suppression ratio,” Opt. Express 23, 8489–8497 (2015).
[PubMed]

B. B. Bakir, C. Sciancalepore, A. Descos, H. Duprez, D. Bordel, L. Sanchez, C. Jany, K. Hassan, P. Brianceau, V. Carron, and S. Menezo, “Heterogeneously integrated III-V on silicon lasers,” ECS Transactions 64, 211–223 (2014).
[Crossref]

Elder, D. L.

C. Kieninger, Y. Kutuvantavida, D. L. Elder, S. Wolf, H. Zwickel, M. Blaicher, J. N. Kemal, M. Lauermann, S. Randel, W. Freude, L. R. Dalton, and C. Koos, “Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator,” Optica 5, 739–748 (2018).
[Crossref]

S. Koeber, R. Palmer, M. Lauermann, W. Heni, D. L. Elder, D. Korn, M. Woessner, L. Alloatti, S. Koenig, P. C. Schindler, and et al., “Femtojoule electro-optic modulation using a silicon–organic hybrid device,” Light: Science & Applications 4, e255(2015).
[Crossref]

El-Zammar, G.

S. Menezo, T. Thiessen, P. Grosse, J. K. S. Poon, C. Jany, J. D. Fonseca, B. Szelag, B. Charbonnier, G. El-Zammar, O. Lemonnier, P. Bilondeau, S. Malhouitre, B. Montmayeul, and L. Sanchez, “High-speed heterogeneous InP-on-Si capacitive phase modulators,” in Optical Fiber Communication Conference, (Optical Society of America, 2018), p. Tu3K.4.

Fang, K.

Fedeli, J.-M.

L. Alloatti, R. Palmer, S. Diebold, K. P. Pahl, B. Chen, R. Dinu, M. Fournier, J.-M. Fedeli, T. Zwick, W. Freude, C. Koos, and J. Leuthold, “100 GHz silicon–organic hybrid modulator,” Light: Science & Applications 3, e173(2014).
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Feré, M.

F. Boeuf, S. Crémer, E. Temporiti, M. Feré, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. L. Maitre, M. Traldi, and L. Maggi, “Silicon photonics R&D and manufacturing on 300-mm wafer platform,” Journal of Lightwave Technology 34, 286–295 (2016).
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Ferrotti, T.

Fiorentino, M.

D. Liang, X. Huang, G. Kurczveil, M. Fiorentino, and R. Beausoleil, “Integrated finely tunable microring laser on silicon,” Nature Photonics 10, 719–722 (2016).
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X. Huang, D. Liang, C. Zhang, G. Kurczveil, X. Li, J. Zhang, M. Fiorentino, and R. Beausoleil, “Heterogeneous MOS microring resonators,” in IPC, (2017), pp. 121–122.

Fonseca, J. D.

S. Menezo, T. Thiessen, P. Grosse, J. K. S. Poon, C. Jany, J. D. Fonseca, B. Szelag, B. Charbonnier, G. El-Zammar, O. Lemonnier, P. Bilondeau, S. Malhouitre, B. Montmayeul, and L. Sanchez, “High-speed heterogeneous InP-on-Si capacitive phase modulators,” in Optical Fiber Communication Conference, (Optical Society of America, 2018), p. Tu3K.4.

Fournier, M.

L. Alloatti, R. Palmer, S. Diebold, K. P. Pahl, B. Chen, R. Dinu, M. Fournier, J.-M. Fedeli, T. Zwick, W. Freude, C. Koos, and J. Leuthold, “100 GHz silicon–organic hybrid modulator,” Light: Science & Applications 3, e173(2014).
[Crossref]

Freude, W.

C. Kieninger, Y. Kutuvantavida, D. L. Elder, S. Wolf, H. Zwickel, M. Blaicher, J. N. Kemal, M. Lauermann, S. Randel, W. Freude, L. R. Dalton, and C. Koos, “Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator,” Optica 5, 739–748 (2018).
[Crossref]

L. Alloatti, R. Palmer, S. Diebold, K. P. Pahl, B. Chen, R. Dinu, M. Fournier, J.-M. Fedeli, T. Zwick, W. Freude, C. Koos, and J. Leuthold, “100 GHz silicon–organic hybrid modulator,” Light: Science & Applications 3, e173(2014).
[Crossref]

Fujii, T.

T. Hiraki, T. Aihara, K. Hasebe, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, and S. Matsuo, “Heterogeneously integrated III–V/Si MOS capacitor Mach-Zehnder modulator,” Nature Photonics 11, 482 (2017).
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Fujikata, J.

J.-H. Han, F. Boeuf, J. Fujikata, S. Takahashi, S. Takagi, and M. Takenaka, “Efficient low-loss InGaAsP/Si hybrid MOS optical modulator,” Nature Photonics 11, 486 (2017).
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J. Fujikata, S. Takahashi, M. Takahashi, M. Noguchi, T. Nakamura, and Y. Arakawa, “High-performance MOS-capacitor-type Si optical modulator and surface-illumination-type Ge photodetector for optical interconnection,” Japanese Journal of Applied Physics 55, 04EC01 (2016).
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Fukuda, H.

T. Hiraki, T. Aihara, K. Hasebe, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, and S. Matsuo, “Heterogeneously integrated III–V/Si MOS capacitor Mach-Zehnder modulator,” Nature Photonics 11, 482 (2017).
[Crossref]

Gardes, F.

G. T. Reed, G. Mashanovich, F. Gardes, and D. Thomson, “Silicon optical modulators,” Nature Photonics 4, 518–526 (2010).
[Crossref]

Ghione, G.

G. Ghione, Semiconductor Devices for High-Speed Optoelectronics(Cambridge University Press, 2009), chap. 6.
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Gonçalves, L. C. D.

O. F. Rocha, C. E. Viana, L. C. D. Gonçalves, and N. I. Morimoto, “Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures,” in Microelectronics Technology and Devices SBMICRO 2004, (The Electrochemical Society, 2004), pp. 295–300.

Goodwill, D.

Gothoskar, P.

M. Webster, C. Appel, P. Gothoskar, S. Sunder, B. Dama, and K. Shastri, “Silicon photonic modulator based on a MOS-capacitor and a CMOS driver,” in CSICs, (2014), pp. 1–4.

Grosse, P.

S. Menezo, T. Thiessen, P. Grosse, J. K. S. Poon, C. Jany, J. D. Fonseca, B. Szelag, B. Charbonnier, G. El-Zammar, O. Lemonnier, P. Bilondeau, S. Malhouitre, B. Montmayeul, and L. Sanchez, “High-speed heterogeneous InP-on-Si capacitive phase modulators,” in Optical Fiber Communication Conference, (Optical Society of America, 2018), p. Tu3K.4.

Han, J.-H.

J.-H. Han, F. Boeuf, J. Fujikata, S. Takahashi, S. Takagi, and M. Takenaka, “Efficient low-loss InGaAsP/Si hybrid MOS optical modulator,” Nature Photonics 11, 486 (2017).
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J.-H. Han, S. Takagi, and M. Takenaka, “High-efficiency O-band Mach-Zehnder modulator based on InGaAsP/Si hybrid MOS capacitor,” in Optical Fiber Communication Conference, (Optical Society of America, 2017), p. W3E.2.

Hartmann, W.

S. Wolf, H. Zwickel, W. Hartmann, M. Lauermann, Y. Kutuvantavida, C. Kieninger, L. Altenhain, R. Schmid, J. Luo, A. K.-Y. Jen, and et al., “Silicon-organic hybrid (SOH) Mach-Zehnder modulators for 100 Gbit/s on-off keying,” Scientific Reports 8, 2598 (2018).
[Crossref] [PubMed]

Hasebe, K.

T. Hiraki, T. Aihara, K. Hasebe, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, and S. Matsuo, “Heterogeneously integrated III–V/Si MOS capacitor Mach-Zehnder modulator,” Nature Photonics 11, 482 (2017).
[Crossref]

Hassan, K.

H. Duprez, A. Descos, T. Ferrotti, C. Sciancalepore, C. Jany, K. Hassan, C. Seassal, S. Menezo, and B. B. Bakir, “1310 nm hybrid InP/InGaAsP on silicon distributed feedback laser with high side-mode suppression ratio,” Opt. Express 23, 8489–8497 (2015).
[PubMed]

B. B. Bakir, C. Sciancalepore, A. Descos, H. Duprez, D. Bordel, L. Sanchez, C. Jany, K. Hassan, P. Brianceau, V. Carron, and S. Menezo, “Heterogeneously integrated III-V on silicon lasers,” ECS Transactions 64, 211–223 (2014).
[Crossref]

Heni, W.

S. Koeber, R. Palmer, M. Lauermann, W. Heni, D. L. Elder, D. Korn, M. Woessner, L. Alloatti, S. Koenig, P. C. Schindler, and et al., “Femtojoule electro-optic modulation using a silicon–organic hybrid device,” Light: Science & Applications 4, e255(2015).
[Crossref]

Hervé, P.

L. Chusseau, P. Martin, C. Brasseur, C. Alibert, P. Hervé, P. Arguel, F. Lozes-Dupuy, and E. V. K. Rao, “Carrier-induced change due to doping in refractive index of InP: measurements at 1.3 and 1.5 μm,” Applied Physics Letters 69, 3054–3056 (1996).
[Crossref]

Hiraki, T.

T. Hiraki, T. Aihara, K. Hasebe, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, and S. Matsuo, “Heterogeneously integrated III–V/Si MOS capacitor Mach-Zehnder modulator,” Nature Photonics 11, 482 (2017).
[Crossref]

Hood, D.

Huang, X.

D. Liang, X. Huang, G. Kurczveil, M. Fiorentino, and R. Beausoleil, “Integrated finely tunable microring laser on silicon,” Nature Photonics 10, 719–722 (2016).
[Crossref]

X. Huang, D. Liang, C. Zhang, G. Kurczveil, X. Li, J. Zhang, M. Fiorentino, and R. Beausoleil, “Heterogeneous MOS microring resonators,” in IPC, (2017), pp. 121–122.

Huang, Y.

Jany, C.

H. Duprez, A. Descos, T. Ferrotti, C. Sciancalepore, C. Jany, K. Hassan, C. Seassal, S. Menezo, and B. B. Bakir, “1310 nm hybrid InP/InGaAsP on silicon distributed feedback laser with high side-mode suppression ratio,” Opt. Express 23, 8489–8497 (2015).
[PubMed]

B. B. Bakir, C. Sciancalepore, A. Descos, H. Duprez, D. Bordel, L. Sanchez, C. Jany, K. Hassan, P. Brianceau, V. Carron, and S. Menezo, “Heterogeneously integrated III-V on silicon lasers,” ECS Transactions 64, 211–223 (2014).
[Crossref]

S. Menezo, T. Thiessen, P. Grosse, J. K. S. Poon, C. Jany, J. D. Fonseca, B. Szelag, B. Charbonnier, G. El-Zammar, O. Lemonnier, P. Bilondeau, S. Malhouitre, B. Montmayeul, and L. Sanchez, “High-speed heterogeneous InP-on-Si capacitive phase modulators,” in Optical Fiber Communication Conference, (Optical Society of America, 2018), p. Tu3K.4.

Jen, A. K.-Y.

S. Wolf, H. Zwickel, W. Hartmann, M. Lauermann, Y. Kutuvantavida, C. Kieninger, L. Altenhain, R. Schmid, J. Luo, A. K.-Y. Jen, and et al., “Silicon-organic hybrid (SOH) Mach-Zehnder modulators for 100 Gbit/s on-off keying,” Scientific Reports 8, 2598 (2018).
[Crossref] [PubMed]

Kakitsuka, T.

T. Hiraki, T. Aihara, K. Hasebe, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, and S. Matsuo, “Heterogeneously integrated III–V/Si MOS capacitor Mach-Zehnder modulator,” Nature Photonics 11, 482 (2017).
[Crossref]

Kemal, J. N.

Kieninger, C.

C. Kieninger, Y. Kutuvantavida, D. L. Elder, S. Wolf, H. Zwickel, M. Blaicher, J. N. Kemal, M. Lauermann, S. Randel, W. Freude, L. R. Dalton, and C. Koos, “Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator,” Optica 5, 739–748 (2018).
[Crossref]

S. Wolf, H. Zwickel, W. Hartmann, M. Lauermann, Y. Kutuvantavida, C. Kieninger, L. Altenhain, R. Schmid, J. Luo, A. K.-Y. Jen, and et al., “Silicon-organic hybrid (SOH) Mach-Zehnder modulators for 100 Gbit/s on-off keying,” Scientific Reports 8, 2598 (2018).
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O. K. Kim and W. A. Bonner, “Infrared reflectance and absorption of N-type InP,” Journal of Electronic Materials 12, 827–836 (1983).
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Koeber, S.

S. Koeber, R. Palmer, M. Lauermann, W. Heni, D. L. Elder, D. Korn, M. Woessner, L. Alloatti, S. Koenig, P. C. Schindler, and et al., “Femtojoule electro-optic modulation using a silicon–organic hybrid device,” Light: Science & Applications 4, e255(2015).
[Crossref]

Koenig, S.

S. Koeber, R. Palmer, M. Lauermann, W. Heni, D. L. Elder, D. Korn, M. Woessner, L. Alloatti, S. Koenig, P. C. Schindler, and et al., “Femtojoule electro-optic modulation using a silicon–organic hybrid device,” Light: Science & Applications 4, e255(2015).
[Crossref]

Koos, C.

C. Kieninger, Y. Kutuvantavida, D. L. Elder, S. Wolf, H. Zwickel, M. Blaicher, J. N. Kemal, M. Lauermann, S. Randel, W. Freude, L. R. Dalton, and C. Koos, “Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator,” Optica 5, 739–748 (2018).
[Crossref]

L. Alloatti, R. Palmer, S. Diebold, K. P. Pahl, B. Chen, R. Dinu, M. Fournier, J.-M. Fedeli, T. Zwick, W. Freude, C. Koos, and J. Leuthold, “100 GHz silicon–organic hybrid modulator,” Light: Science & Applications 3, e173(2014).
[Crossref]

Korn, D.

S. Koeber, R. Palmer, M. Lauermann, W. Heni, D. L. Elder, D. Korn, M. Woessner, L. Alloatti, S. Koenig, P. C. Schindler, and et al., “Femtojoule electro-optic modulation using a silicon–organic hybrid device,” Light: Science & Applications 4, e255(2015).
[Crossref]

Kurczveil, G.

D. Liang, X. Huang, G. Kurczveil, M. Fiorentino, and R. Beausoleil, “Integrated finely tunable microring laser on silicon,” Nature Photonics 10, 719–722 (2016).
[Crossref]

X. Huang, D. Liang, C. Zhang, G. Kurczveil, X. Li, J. Zhang, M. Fiorentino, and R. Beausoleil, “Heterogeneous MOS microring resonators,” in IPC, (2017), pp. 121–122.

Kutuvantavida, Y.

S. Wolf, H. Zwickel, W. Hartmann, M. Lauermann, Y. Kutuvantavida, C. Kieninger, L. Altenhain, R. Schmid, J. Luo, A. K.-Y. Jen, and et al., “Silicon-organic hybrid (SOH) Mach-Zehnder modulators for 100 Gbit/s on-off keying,” Scientific Reports 8, 2598 (2018).
[Crossref] [PubMed]

C. Kieninger, Y. Kutuvantavida, D. L. Elder, S. Wolf, H. Zwickel, M. Blaicher, J. N. Kemal, M. Lauermann, S. Randel, W. Freude, L. R. Dalton, and C. Koos, “Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator,” Optica 5, 739–748 (2018).
[Crossref]

Lauermann, M.

C. Kieninger, Y. Kutuvantavida, D. L. Elder, S. Wolf, H. Zwickel, M. Blaicher, J. N. Kemal, M. Lauermann, S. Randel, W. Freude, L. R. Dalton, and C. Koos, “Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator,” Optica 5, 739–748 (2018).
[Crossref]

S. Wolf, H. Zwickel, W. Hartmann, M. Lauermann, Y. Kutuvantavida, C. Kieninger, L. Altenhain, R. Schmid, J. Luo, A. K.-Y. Jen, and et al., “Silicon-organic hybrid (SOH) Mach-Zehnder modulators for 100 Gbit/s on-off keying,” Scientific Reports 8, 2598 (2018).
[Crossref] [PubMed]

S. Koeber, R. Palmer, M. Lauermann, W. Heni, D. L. Elder, D. Korn, M. Woessner, L. Alloatti, S. Koenig, P. C. Schindler, and et al., “Femtojoule electro-optic modulation using a silicon–organic hybrid device,” Light: Science & Applications 4, e255(2015).
[Crossref]

Lemonnier, O.

S. Menezo, T. Thiessen, P. Grosse, J. K. S. Poon, C. Jany, J. D. Fonseca, B. Szelag, B. Charbonnier, G. El-Zammar, O. Lemonnier, P. Bilondeau, S. Malhouitre, B. Montmayeul, and L. Sanchez, “High-speed heterogeneous InP-on-Si capacitive phase modulators,” in Optical Fiber Communication Conference, (Optical Society of America, 2018), p. Tu3K.4.

Lentine, A. L.

Leuthold, J.

L. Alloatti, R. Palmer, S. Diebold, K. P. Pahl, B. Chen, R. Dinu, M. Fournier, J.-M. Fedeli, T. Zwick, W. Freude, C. Koos, and J. Leuthold, “100 GHz silicon–organic hybrid modulator,” Light: Science & Applications 3, e173(2014).
[Crossref]

Li, X.

X. Huang, D. Liang, C. Zhang, G. Kurczveil, X. Li, J. Zhang, M. Fiorentino, and R. Beausoleil, “Heterogeneous MOS microring resonators,” in IPC, (2017), pp. 121–122.

Liang, D.

D. Liang, X. Huang, G. Kurczveil, M. Fiorentino, and R. Beausoleil, “Integrated finely tunable microring laser on silicon,” Nature Photonics 10, 719–722 (2016).
[Crossref]

X. Huang, D. Liang, C. Zhang, G. Kurczveil, X. Li, J. Zhang, M. Fiorentino, and R. Beausoleil, “Heterogeneous MOS microring resonators,” in IPC, (2017), pp. 121–122.

Lipson, M.

Lo, P. G.-Q.

Loncar, M.

Lozes-Dupuy, F.

L. Chusseau, P. Martin, C. Brasseur, C. Alibert, P. Hervé, P. Arguel, F. Lozes-Dupuy, and E. V. K. Rao, “Carrier-induced change due to doping in refractive index of InP: measurements at 1.3 and 1.5 μm,” Applied Physics Letters 69, 3054–3056 (1996).
[Crossref]

Luo, J.

S. Wolf, H. Zwickel, W. Hartmann, M. Lauermann, Y. Kutuvantavida, C. Kieninger, L. Altenhain, R. Schmid, J. Luo, A. K.-Y. Jen, and et al., “Silicon-organic hybrid (SOH) Mach-Zehnder modulators for 100 Gbit/s on-off keying,” Scientific Reports 8, 2598 (2018).
[Crossref] [PubMed]

Luo, X.

Maggi, L.

F. Boeuf, S. Crémer, E. Temporiti, M. Feré, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. L. Maitre, M. Traldi, and L. Maggi, “Silicon photonics R&D and manufacturing on 300-mm wafer platform,” Journal of Lightwave Technology 34, 286–295 (2016).
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Maitre, P. L.

F. Boeuf, S. Crémer, E. Temporiti, M. Feré, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. L. Maitre, M. Traldi, and L. Maggi, “Silicon photonics R&D and manufacturing on 300-mm wafer platform,” Journal of Lightwave Technology 34, 286–295 (2016).
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Malhouitre, S.

S. Menezo, T. Thiessen, P. Grosse, J. K. S. Poon, C. Jany, J. D. Fonseca, B. Szelag, B. Charbonnier, G. El-Zammar, O. Lemonnier, P. Bilondeau, S. Malhouitre, B. Montmayeul, and L. Sanchez, “High-speed heterogeneous InP-on-Si capacitive phase modulators,” in Optical Fiber Communication Conference, (Optical Society of America, 2018), p. Tu3K.4.

Martin, P.

L. Chusseau, P. Martin, C. Brasseur, C. Alibert, P. Hervé, P. Arguel, F. Lozes-Dupuy, and E. V. K. Rao, “Carrier-induced change due to doping in refractive index of InP: measurements at 1.3 and 1.5 μm,” Applied Physics Letters 69, 3054–3056 (1996).
[Crossref]

Mashanovich, G.

G. T. Reed, G. Mashanovich, F. Gardes, and D. Thomson, “Silicon optical modulators,” Nature Photonics 4, 518–526 (2010).
[Crossref]

Masini, G.

F. Boeuf, S. Crémer, E. Temporiti, M. Feré, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. L. Maitre, M. Traldi, and L. Maggi, “Silicon photonics R&D and manufacturing on 300-mm wafer platform,” Journal of Lightwave Technology 34, 286–295 (2016).
[Crossref]

Matsuo, S.

T. Hiraki, T. Aihara, K. Hasebe, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, and S. Matsuo, “Heterogeneously integrated III–V/Si MOS capacitor Mach-Zehnder modulator,” Nature Photonics 11, 482 (2017).
[Crossref]

Mekis, A.

F. Boeuf, S. Crémer, E. Temporiti, M. Feré, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. L. Maitre, M. Traldi, and L. Maggi, “Silicon photonics R&D and manufacturing on 300-mm wafer platform,” Journal of Lightwave Technology 34, 286–295 (2016).
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Menezo, S.

H. Duprez, A. Descos, T. Ferrotti, C. Sciancalepore, C. Jany, K. Hassan, C. Seassal, S. Menezo, and B. B. Bakir, “1310 nm hybrid InP/InGaAsP on silicon distributed feedback laser with high side-mode suppression ratio,” Opt. Express 23, 8489–8497 (2015).
[PubMed]

B. B. Bakir, C. Sciancalepore, A. Descos, H. Duprez, D. Bordel, L. Sanchez, C. Jany, K. Hassan, P. Brianceau, V. Carron, and S. Menezo, “Heterogeneously integrated III-V on silicon lasers,” ECS Transactions 64, 211–223 (2014).
[Crossref]

S. Menezo, T. Thiessen, P. Grosse, J. K. S. Poon, C. Jany, J. D. Fonseca, B. Szelag, B. Charbonnier, G. El-Zammar, O. Lemonnier, P. Bilondeau, S. Malhouitre, B. Montmayeul, and L. Sanchez, “High-speed heterogeneous InP-on-Si capacitive phase modulators,” in Optical Fiber Communication Conference, (Optical Society of America, 2018), p. Tu3K.4.

Meyer, J.

I. Vurgaftman, J. Meyer, and L. Ram-Mohan, “Band parameters for III-V compound semiconductors and their alloys,” Journal of Applied Physics 89, 5815–5875 (2001).
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Mikkelsen, J. C.

Montmayeul, B.

S. Menezo, T. Thiessen, P. Grosse, J. K. S. Poon, C. Jany, J. D. Fonseca, B. Szelag, B. Charbonnier, G. El-Zammar, O. Lemonnier, P. Bilondeau, S. Malhouitre, B. Montmayeul, and L. Sanchez, “High-speed heterogeneous InP-on-Si capacitive phase modulators,” in Optical Fiber Communication Conference, (Optical Society of America, 2018), p. Tu3K.4.

Mookherjea, S.

Morimoto, N. I.

O. F. Rocha, C. E. Viana, L. C. D. Gonçalves, and N. I. Morimoto, “Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures,” in Microelectronics Technology and Devices SBMICRO 2004, (The Electrochemical Society, 2004), pp. 295–300.

Mudrick, J.

Nakamura, T.

J. Fujikata, S. Takahashi, M. Takahashi, M. Noguchi, T. Nakamura, and Y. Arakawa, “High-performance MOS-capacitor-type Si optical modulator and surface-illumination-type Ge photodetector for optical interconnection,” Japanese Journal of Applied Physics 55, 04EC01 (2016).
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Noguchi, M.

J. Fujikata, S. Takahashi, M. Takahashi, M. Noguchi, T. Nakamura, and Y. Arakawa, “High-performance MOS-capacitor-type Si optical modulator and surface-illumination-type Ge photodetector for optical interconnection,” Japanese Journal of Applied Physics 55, 04EC01 (2016).
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Pahl, K. P.

L. Alloatti, R. Palmer, S. Diebold, K. P. Pahl, B. Chen, R. Dinu, M. Fournier, J.-M. Fedeli, T. Zwick, W. Freude, C. Koos, and J. Leuthold, “100 GHz silicon–organic hybrid modulator,” Light: Science & Applications 3, e173(2014).
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Palmer, R.

S. Koeber, R. Palmer, M. Lauermann, W. Heni, D. L. Elder, D. Korn, M. Woessner, L. Alloatti, S. Koenig, P. C. Schindler, and et al., “Femtojoule electro-optic modulation using a silicon–organic hybrid device,” Light: Science & Applications 4, e255(2015).
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L. Alloatti, R. Palmer, S. Diebold, K. P. Pahl, B. Chen, R. Dinu, M. Fournier, J.-M. Fedeli, T. Zwick, W. Freude, C. Koos, and J. Leuthold, “100 GHz silicon–organic hybrid modulator,” Light: Science & Applications 3, e173(2014).
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Petiton, H.

F. Boeuf, S. Crémer, E. Temporiti, M. Feré, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. L. Maitre, M. Traldi, and L. Maggi, “Silicon photonics R&D and manufacturing on 300-mm wafer platform,” Journal of Lightwave Technology 34, 286–295 (2016).
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Pinguet, T.

F. Boeuf, S. Crémer, E. Temporiti, M. Feré, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. L. Maitre, M. Traldi, and L. Maggi, “Silicon photonics R&D and manufacturing on 300-mm wafer platform,” Journal of Lightwave Technology 34, 286–295 (2016).
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Pomerene, A. T.

Poon, J. K. S.

Z. Yong, W. D. Sacher, Y. Huang, J. C. Mikkelsen, Y. Yang, X. Luo, P. Dumais, D. Goodwill, H. Bahrami, P. G.-Q. Lo, E. Bernier, and J. K. S. Poon, “U-shaped PN junctions for efficient silicon Mach-Zehnder and microring modulators in the O-band,” Opt. Express 25, 8425–8439 (2017).
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S. Menezo, T. Thiessen, P. Grosse, J. K. S. Poon, C. Jany, J. D. Fonseca, B. Szelag, B. Charbonnier, G. El-Zammar, O. Lemonnier, P. Bilondeau, S. Malhouitre, B. Montmayeul, and L. Sanchez, “High-speed heterogeneous InP-on-Si capacitive phase modulators,” in Optical Fiber Communication Conference, (Optical Society of America, 2018), p. Tu3K.4.

Ram-Mohan, L.

I. Vurgaftman, J. Meyer, and L. Ram-Mohan, “Band parameters for III-V compound semiconductors and their alloys,” Journal of Applied Physics 89, 5815–5875 (2001).
[Crossref]

Randel, S.

Rao, E. V. K.

L. Chusseau, P. Martin, C. Brasseur, C. Alibert, P. Hervé, P. Arguel, F. Lozes-Dupuy, and E. V. K. Rao, “Carrier-induced change due to doping in refractive index of InP: measurements at 1.3 and 1.5 μm,” Applied Physics Letters 69, 3054–3056 (1996).
[Crossref]

Rebeiz, G.

Reed, G. T.

G. T. Reed, G. Mashanovich, F. Gardes, and D. Thomson, “Silicon optical modulators,” Nature Photonics 4, 518–526 (2010).
[Crossref]

Rocha, O. F.

O. F. Rocha, C. E. Viana, L. C. D. Gonçalves, and N. I. Morimoto, “Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures,” in Microelectronics Technology and Devices SBMICRO 2004, (The Electrochemical Society, 2004), pp. 295–300.

Sacher, W. D.

Sanchez, L.

B. B. Bakir, C. Sciancalepore, A. Descos, H. Duprez, D. Bordel, L. Sanchez, C. Jany, K. Hassan, P. Brianceau, V. Carron, and S. Menezo, “Heterogeneously integrated III-V on silicon lasers,” ECS Transactions 64, 211–223 (2014).
[Crossref]

S. Menezo, T. Thiessen, P. Grosse, J. K. S. Poon, C. Jany, J. D. Fonseca, B. Szelag, B. Charbonnier, G. El-Zammar, O. Lemonnier, P. Bilondeau, S. Malhouitre, B. Montmayeul, and L. Sanchez, “High-speed heterogeneous InP-on-Si capacitive phase modulators,” in Optical Fiber Communication Conference, (Optical Society of America, 2018), p. Tu3K.4.

Schindler, P. C.

S. Koeber, R. Palmer, M. Lauermann, W. Heni, D. L. Elder, D. Korn, M. Woessner, L. Alloatti, S. Koenig, P. C. Schindler, and et al., “Femtojoule electro-optic modulation using a silicon–organic hybrid device,” Light: Science & Applications 4, e255(2015).
[Crossref]

Schmid, R.

S. Wolf, H. Zwickel, W. Hartmann, M. Lauermann, Y. Kutuvantavida, C. Kieninger, L. Altenhain, R. Schmid, J. Luo, A. K.-Y. Jen, and et al., “Silicon-organic hybrid (SOH) Mach-Zehnder modulators for 100 Gbit/s on-off keying,” Scientific Reports 8, 2598 (2018).
[Crossref] [PubMed]

Sciancalepore, C.

H. Duprez, A. Descos, T. Ferrotti, C. Sciancalepore, C. Jany, K. Hassan, C. Seassal, S. Menezo, and B. B. Bakir, “1310 nm hybrid InP/InGaAsP on silicon distributed feedback laser with high side-mode suppression ratio,” Opt. Express 23, 8489–8497 (2015).
[PubMed]

B. B. Bakir, C. Sciancalepore, A. Descos, H. Duprez, D. Bordel, L. Sanchez, C. Jany, K. Hassan, P. Brianceau, V. Carron, and S. Menezo, “Heterogeneously integrated III-V on silicon lasers,” ECS Transactions 64, 211–223 (2014).
[Crossref]

Seassal, C.

Shastri, K.

M. Webster, C. Appel, P. Gothoskar, S. Sunder, B. Dama, and K. Shastri, “Silicon photonic modulator based on a MOS-capacitor and a CMOS driver,” in CSICs, (2014), pp. 1–4.

Shaw, M.

F. Boeuf, S. Crémer, E. Temporiti, M. Feré, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. L. Maitre, M. Traldi, and L. Maggi, “Silicon photonics R&D and manufacturing on 300-mm wafer platform,” Journal of Lightwave Technology 34, 286–295 (2016).
[Crossref]

Soref, R.

R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE Journal of Quantum Electronics 23, 123–129 (1987).
[Crossref]

Soref, R. A.

B. R. Bennett, R. A. Soref, and J. A. D. Alamo, “Carrier-induced change in refractive index of InP, GaAs and InGaAsP,” Journal of Quantum Electronics 26, 113–122 (1990).
[Crossref]

Starbuck, A. L.

Stern, B.

Sunder, S.

M. Webster, C. Appel, P. Gothoskar, S. Sunder, B. Dama, and K. Shastri, “Silicon photonic modulator based on a MOS-capacitor and a CMOS driver,” in CSICs, (2014), pp. 1–4.

Szelag, B.

S. Menezo, T. Thiessen, P. Grosse, J. K. S. Poon, C. Jany, J. D. Fonseca, B. Szelag, B. Charbonnier, G. El-Zammar, O. Lemonnier, P. Bilondeau, S. Malhouitre, B. Montmayeul, and L. Sanchez, “High-speed heterogeneous InP-on-Si capacitive phase modulators,” in Optical Fiber Communication Conference, (Optical Society of America, 2018), p. Tu3K.4.

Takagi, S.

J.-H. Han, F. Boeuf, J. Fujikata, S. Takahashi, S. Takagi, and M. Takenaka, “Efficient low-loss InGaAsP/Si hybrid MOS optical modulator,” Nature Photonics 11, 486 (2017).
[Crossref]

J.-H. Han, S. Takagi, and M. Takenaka, “High-efficiency O-band Mach-Zehnder modulator based on InGaAsP/Si hybrid MOS capacitor,” in Optical Fiber Communication Conference, (Optical Society of America, 2017), p. W3E.2.

Takahashi, M.

J. Fujikata, S. Takahashi, M. Takahashi, M. Noguchi, T. Nakamura, and Y. Arakawa, “High-performance MOS-capacitor-type Si optical modulator and surface-illumination-type Ge photodetector for optical interconnection,” Japanese Journal of Applied Physics 55, 04EC01 (2016).
[Crossref]

Takahashi, S.

J.-H. Han, F. Boeuf, J. Fujikata, S. Takahashi, S. Takagi, and M. Takenaka, “Efficient low-loss InGaAsP/Si hybrid MOS optical modulator,” Nature Photonics 11, 486 (2017).
[Crossref]

J. Fujikata, S. Takahashi, M. Takahashi, M. Noguchi, T. Nakamura, and Y. Arakawa, “High-performance MOS-capacitor-type Si optical modulator and surface-illumination-type Ge photodetector for optical interconnection,” Japanese Journal of Applied Physics 55, 04EC01 (2016).
[Crossref]

Takeda, K.

T. Hiraki, T. Aihara, K. Hasebe, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, and S. Matsuo, “Heterogeneously integrated III–V/Si MOS capacitor Mach-Zehnder modulator,” Nature Photonics 11, 482 (2017).
[Crossref]

Takenaka, M.

J.-H. Han, F. Boeuf, J. Fujikata, S. Takahashi, S. Takagi, and M. Takenaka, “Efficient low-loss InGaAsP/Si hybrid MOS optical modulator,” Nature Photonics 11, 486 (2017).
[Crossref]

J.-H. Han, S. Takagi, and M. Takenaka, “High-efficiency O-band Mach-Zehnder modulator based on InGaAsP/Si hybrid MOS capacitor,” in Optical Fiber Communication Conference, (Optical Society of America, 2017), p. W3E.2.

Temporiti, E.

F. Boeuf, S. Crémer, E. Temporiti, M. Feré, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. L. Maitre, M. Traldi, and L. Maggi, “Silicon photonics R&D and manufacturing on 300-mm wafer platform,” Journal of Lightwave Technology 34, 286–295 (2016).
[Crossref]

Thiessen, T.

S. Menezo, T. Thiessen, P. Grosse, J. K. S. Poon, C. Jany, J. D. Fonseca, B. Szelag, B. Charbonnier, G. El-Zammar, O. Lemonnier, P. Bilondeau, S. Malhouitre, B. Montmayeul, and L. Sanchez, “High-speed heterogeneous InP-on-Si capacitive phase modulators,” in Optical Fiber Communication Conference, (Optical Society of America, 2018), p. Tu3K.4.

Thomson, D.

G. T. Reed, G. Mashanovich, F. Gardes, and D. Thomson, “Silicon optical modulators,” Nature Photonics 4, 518–526 (2010).
[Crossref]

Traldi, M.

F. Boeuf, S. Crémer, E. Temporiti, M. Feré, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. L. Maitre, M. Traldi, and L. Maggi, “Silicon photonics R&D and manufacturing on 300-mm wafer platform,” Journal of Lightwave Technology 34, 286–295 (2016).
[Crossref]

Trotter, D.

Tsuchizawa, T.

T. Hiraki, T. Aihara, K. Hasebe, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, and S. Matsuo, “Heterogeneously integrated III–V/Si MOS capacitor Mach-Zehnder modulator,” Nature Photonics 11, 482 (2017).
[Crossref]

Viana, C. E.

O. F. Rocha, C. E. Viana, L. C. D. Gonçalves, and N. I. Morimoto, “Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures,” in Microelectronics Technology and Devices SBMICRO 2004, (The Electrochemical Society, 2004), pp. 295–300.

Vulliet, N.

F. Boeuf, S. Crémer, E. Temporiti, M. Feré, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. L. Maitre, M. Traldi, and L. Maggi, “Silicon photonics R&D and manufacturing on 300-mm wafer platform,” Journal of Lightwave Technology 34, 286–295 (2016).
[Crossref]

Vurgaftman, I.

I. Vurgaftman, J. Meyer, and L. Ram-Mohan, “Band parameters for III-V compound semiconductors and their alloys,” Journal of Applied Physics 89, 5815–5875 (2001).
[Crossref]

Wang, C.

Webster, M.

M. Webster, C. Appel, P. Gothoskar, S. Sunder, B. Dama, and K. Shastri, “Silicon photonic modulator based on a MOS-capacitor and a CMOS driver,” in CSICs, (2014), pp. 1–4.

Weigel, P. O.

Woessner, M.

S. Koeber, R. Palmer, M. Lauermann, W. Heni, D. L. Elder, D. Korn, M. Woessner, L. Alloatti, S. Koenig, P. C. Schindler, and et al., “Femtojoule electro-optic modulation using a silicon–organic hybrid device,” Light: Science & Applications 4, e255(2015).
[Crossref]

Wolf, S.

S. Wolf, H. Zwickel, W. Hartmann, M. Lauermann, Y. Kutuvantavida, C. Kieninger, L. Altenhain, R. Schmid, J. Luo, A. K.-Y. Jen, and et al., “Silicon-organic hybrid (SOH) Mach-Zehnder modulators for 100 Gbit/s on-off keying,” Scientific Reports 8, 2598 (2018).
[Crossref] [PubMed]

C. Kieninger, Y. Kutuvantavida, D. L. Elder, S. Wolf, H. Zwickel, M. Blaicher, J. N. Kemal, M. Lauermann, S. Randel, W. Freude, L. R. Dalton, and C. Koos, “Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator,” Optica 5, 739–748 (2018).
[Crossref]

Yang, Y.

Yong, Z.

Zhang, C.

X. Huang, D. Liang, C. Zhang, G. Kurczveil, X. Li, J. Zhang, M. Fiorentino, and R. Beausoleil, “Heterogeneous MOS microring resonators,” in IPC, (2017), pp. 121–122.

Zhang, J.

X. Huang, D. Liang, C. Zhang, G. Kurczveil, X. Li, J. Zhang, M. Fiorentino, and R. Beausoleil, “Heterogeneous MOS microring resonators,” in IPC, (2017), pp. 121–122.

Zhang, M.

Zhao, J.

Zwick, T.

L. Alloatti, R. Palmer, S. Diebold, K. P. Pahl, B. Chen, R. Dinu, M. Fournier, J.-M. Fedeli, T. Zwick, W. Freude, C. Koos, and J. Leuthold, “100 GHz silicon–organic hybrid modulator,” Light: Science & Applications 3, e173(2014).
[Crossref]

Zwickel, H.

S. Wolf, H. Zwickel, W. Hartmann, M. Lauermann, Y. Kutuvantavida, C. Kieninger, L. Altenhain, R. Schmid, J. Luo, A. K.-Y. Jen, and et al., “Silicon-organic hybrid (SOH) Mach-Zehnder modulators for 100 Gbit/s on-off keying,” Scientific Reports 8, 2598 (2018).
[Crossref] [PubMed]

C. Kieninger, Y. Kutuvantavida, D. L. Elder, S. Wolf, H. Zwickel, M. Blaicher, J. N. Kemal, M. Lauermann, S. Randel, W. Freude, L. R. Dalton, and C. Koos, “Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator,” Optica 5, 739–748 (2018).
[Crossref]

Applied Physics Letters (1)

L. Chusseau, P. Martin, C. Brasseur, C. Alibert, P. Hervé, P. Arguel, F. Lozes-Dupuy, and E. V. K. Rao, “Carrier-induced change due to doping in refractive index of InP: measurements at 1.3 and 1.5 μm,” Applied Physics Letters 69, 3054–3056 (1996).
[Crossref]

ECS Transactions (1)

B. B. Bakir, C. Sciancalepore, A. Descos, H. Duprez, D. Bordel, L. Sanchez, C. Jany, K. Hassan, P. Brianceau, V. Carron, and S. Menezo, “Heterogeneously integrated III-V on silicon lasers,” ECS Transactions 64, 211–223 (2014).
[Crossref]

IEEE Journal of Quantum Electronics (1)

R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE Journal of Quantum Electronics 23, 123–129 (1987).
[Crossref]

Japanese Journal of Applied Physics (1)

J. Fujikata, S. Takahashi, M. Takahashi, M. Noguchi, T. Nakamura, and Y. Arakawa, “High-performance MOS-capacitor-type Si optical modulator and surface-illumination-type Ge photodetector for optical interconnection,” Japanese Journal of Applied Physics 55, 04EC01 (2016).
[Crossref]

Journal of Applied Physics (1)

I. Vurgaftman, J. Meyer, and L. Ram-Mohan, “Band parameters for III-V compound semiconductors and their alloys,” Journal of Applied Physics 89, 5815–5875 (2001).
[Crossref]

Journal of Electronic Materials (1)

O. K. Kim and W. A. Bonner, “Infrared reflectance and absorption of N-type InP,” Journal of Electronic Materials 12, 827–836 (1983).
[Crossref]

Journal of Lightwave Technology (1)

F. Boeuf, S. Crémer, E. Temporiti, M. Feré, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. L. Maitre, M. Traldi, and L. Maggi, “Silicon photonics R&D and manufacturing on 300-mm wafer platform,” Journal of Lightwave Technology 34, 286–295 (2016).
[Crossref]

Journal of Quantum Electronics (1)

B. R. Bennett, R. A. Soref, and J. A. D. Alamo, “Carrier-induced change in refractive index of InP, GaAs and InGaAsP,” Journal of Quantum Electronics 26, 113–122 (1990).
[Crossref]

Light: Science & Applications (2)

S. Koeber, R. Palmer, M. Lauermann, W. Heni, D. L. Elder, D. Korn, M. Woessner, L. Alloatti, S. Koenig, P. C. Schindler, and et al., “Femtojoule electro-optic modulation using a silicon–organic hybrid device,” Light: Science & Applications 4, e255(2015).
[Crossref]

L. Alloatti, R. Palmer, S. Diebold, K. P. Pahl, B. Chen, R. Dinu, M. Fournier, J.-M. Fedeli, T. Zwick, W. Freude, C. Koos, and J. Leuthold, “100 GHz silicon–organic hybrid modulator,” Light: Science & Applications 3, e173(2014).
[Crossref]

Nature Photonics (4)

G. T. Reed, G. Mashanovich, F. Gardes, and D. Thomson, “Silicon optical modulators,” Nature Photonics 4, 518–526 (2010).
[Crossref]

D. Liang, X. Huang, G. Kurczveil, M. Fiorentino, and R. Beausoleil, “Integrated finely tunable microring laser on silicon,” Nature Photonics 10, 719–722 (2016).
[Crossref]

J.-H. Han, F. Boeuf, J. Fujikata, S. Takahashi, S. Takagi, and M. Takenaka, “Efficient low-loss InGaAsP/Si hybrid MOS optical modulator,” Nature Photonics 11, 486 (2017).
[Crossref]

T. Hiraki, T. Aihara, K. Hasebe, K. Takeda, T. Fujii, T. Kakitsuka, T. Tsuchizawa, H. Fukuda, and S. Matsuo, “Heterogeneously integrated III–V/Si MOS capacitor Mach-Zehnder modulator,” Nature Photonics 11, 482 (2017).
[Crossref]

Opt. Express (4)

Optica (1)

Scientific Reports (1)

S. Wolf, H. Zwickel, W. Hartmann, M. Lauermann, Y. Kutuvantavida, C. Kieninger, L. Altenhain, R. Schmid, J. Luo, A. K.-Y. Jen, and et al., “Silicon-organic hybrid (SOH) Mach-Zehnder modulators for 100 Gbit/s on-off keying,” Scientific Reports 8, 2598 (2018).
[Crossref] [PubMed]

Other (6)

M. Webster, C. Appel, P. Gothoskar, S. Sunder, B. Dama, and K. Shastri, “Silicon photonic modulator based on a MOS-capacitor and a CMOS driver,” in CSICs, (2014), pp. 1–4.

J.-H. Han, S. Takagi, and M. Takenaka, “High-efficiency O-band Mach-Zehnder modulator based on InGaAsP/Si hybrid MOS capacitor,” in Optical Fiber Communication Conference, (Optical Society of America, 2017), p. W3E.2.

S. Menezo, T. Thiessen, P. Grosse, J. K. S. Poon, C. Jany, J. D. Fonseca, B. Szelag, B. Charbonnier, G. El-Zammar, O. Lemonnier, P. Bilondeau, S. Malhouitre, B. Montmayeul, and L. Sanchez, “High-speed heterogeneous InP-on-Si capacitive phase modulators,” in Optical Fiber Communication Conference, (Optical Society of America, 2018), p. Tu3K.4.

X. Huang, D. Liang, C. Zhang, G. Kurczveil, X. Li, J. Zhang, M. Fiorentino, and R. Beausoleil, “Heterogeneous MOS microring resonators,” in IPC, (2017), pp. 121–122.

O. F. Rocha, C. E. Viana, L. C. D. Gonçalves, and N. I. Morimoto, “Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures,” in Microelectronics Technology and Devices SBMICRO 2004, (The Electrochemical Society, 2004), pp. 295–300.

G. Ghione, Semiconductor Devices for High-Speed Optoelectronics(Cambridge University Press, 2009), chap. 6.
[Crossref]

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Figures (5)

Figure 1
Figure 1 (a) Cross-section of hybrid InP-on-Si capacitive modulator platform. (b) SEM cross-section of a modulator with a w   top of ~0 nm. (c) Optical mode supported by the hybrid InP-on-Si waveguide.
Figure 2
Figure 2 Simulated efficiency, absorption loss, and high-frequency capacitance as a function of (a)-(b) oxide thickness, (c)-(d) Si rib waveguides width, and (e)-(f) InP overhang.
Figure 3
Figure 3 Optical micrograph of the fabricated 500 μm long MZM.
Figure 4
Figure 4 The DC tuning spectra of (a) the 250 μm long MZM and (b) the 500 μm long MZM, respectively, when a voltage is applied to the top arm. The response of the grating couplers has been removed from the data in (a) and (b). (c) Accumulated phase shift per mm as a function of applied voltage for the measured (solid lines) and simulated (dashed lines) hybrid waveguides. (d) Measured and simulated capacitance of the 400 nm wide hybrid waveguide, as a function of applied voltage, for an oxide thickness of 20 nm. (e) Measured and simulated capacitance of the 500 nm wide hybrid waveguide, as a function of applied voltage, for an oxide thickness of 20 nm. The measurement with a lower modulation frequency shows a higher capacitance in depletion.
Figure 5
Figure 5 The measured electrical S11 and EO S21 of (a) the 250 μm long modulator and (b) the 500 μm modulator. The EO 3 dB BWs in (a) and (b) are 30 GHz and 11 GHz with a 0 V bias applied and 26 GHz and 9 GHz with a 2 V bias, respectively.(c) The eye pattern of the 500 μm long modulator biased at 0 V and driven with 2.4 V   pp at 10 Gb/s using the PRBS-9 pattern. No optical amplification or pre-emphasis was used. The ER and OMA were 4.8 dB and -2.3 dBm, respectively. (d) Theeye pattern of the 250 μm long modulator biased at 0 V and driven with 4 V   pp at 25 Gb/s using the PRBS-9 pattern. The ER and OMA are 2.3 dB and -5.1 dBm, respectively.

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