Abstract

We demonstrate very high luminous efficacy InGaN-based green light-emitting diodes (LEDs) grown on c-plane patterned sapphire substrates (PSS) using metal organic chemical vapor deposition (MOCVD). The 527 nm green LEDs show a peak external quantum efficiency (EQE) of 53.3%, a peak wall-plug efficiency (WPE) of 54.1% and a peak luminous efficacy of 329 lm/W, respectively. A high EQE of 38.4%, a WPE of 32.1% and a very low forward voltage of 2.86 V were obtained at a typical working current density of 20 A/cm2. By operating low cost green LEDs at a low current density, our devices (0.5 mm2) demonstrating an EQE and a WPE higher than 50% and an efficacy of 259 lm/W at 4 A/cm2 with an output power of 24 mW. High crystal quality of the InGaN/GaN MQWs was characterized by X-ray diffraction (XRD) and the advantage of the epitaxy design was investigated by APSYS software simulation. These results provide a simple way to achieve very high efficiency InGaN green LEDs.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
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    [Crossref]
  4. T. Li, A. M. Fischer, Q. Y. Wei, F. A. Ponce, T. Detchprohm, and C. Wetzel, “Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells,” Appl. Phys. Lett. 96(3), 031906 (2010).
    [Crossref]
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    [Crossref]
  6. J. Bai, B. Xu, F. G. Guzman, K. Xing, Y. Gong, Y. Hou, and T. Wang, “(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates,” Appl. Phys. Lett. 107(26), 261103 (2015).
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  7. C. Zhao, T. K. Ng, R. T. ElAfandy, A. Prabaswara, G. B. Consiglio, I. A. Ajia, I. S. Roqan, B. Janjua, C. Shen, J. Eid, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics,” Nano Lett. 16(7), 4616–4623 (2016).
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref] [PubMed]
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    [Crossref] [PubMed]
  18. S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, and B. R. Luang, “Nitride-based LEDs with p-InGaN capping layer,” IEEE Trans. Electron Dev. 50(12), 2567–2570 (2003).
    [Crossref]
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    [Crossref]
  20. H. Li, J. Kang, P. Li, J. Ma, H. Wang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer,” Appl. Phys. Lett. 102(1), 011105 (2013).
    [Crossref]
  21. L. Wang, Z. H. Zhang, and N. Wang, “Current crowding phenomenon: theoretical and direct correlation with the efficiency droop of light emitting diodes by a modified ABC model,” IEEE J. Quantum Electron. 51(1), 1–9 (2015).
  22. S. A. A. Muyeed, W. Sun, X. Wei, R. Song, D. D. Koleske, N. Tansu, and J. J. Wierer, “Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers,” AIP Adv. 7(10), 105312 (2017).
    [Crossref]
  23. D. D. Koleske, A. J. Fischer, B. N. Bryant, P. G. Kotula, and J. J. Wierer, “On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers,” J. Cryst. Growth 415(1), 57–64 (2015).
    [Crossref]
  24. Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
    [Crossref]
  25. H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization,” Appl. Phys. Express 6(9), 092101 (2013).
    [Crossref]
  26. E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98(16), 161107 (2011).
    [Crossref]
  27. L. Y. Kuritzky, C. Weisbuch, and J. S. Speck, “Prospects for 100% wall-plug efficient III-nitride LEDs,” Opt. Express 26(13), 16600–16608 (2018).
    [Crossref] [PubMed]
  28. A. David, C. A. Hurni, N. G. Young, and M. D. Craven, “Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling,” Appl. Phys. Lett. 109(8), 083501 (2016).
    [Crossref]

2018 (1)

2017 (1)

S. A. A. Muyeed, W. Sun, X. Wei, R. Song, D. D. Koleske, N. Tansu, and J. J. Wierer, “Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers,” AIP Adv. 7(10), 105312 (2017).
[Crossref]

2016 (5)

A. David, C. A. Hurni, N. G. Young, and M. D. Craven, “Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling,” Appl. Phys. Lett. 109(8), 083501 (2016).
[Crossref]

A. J. Tzou, D. W. Lin, C. R. Yu, Z. Y. Li, Y. K. Liao, B. C. Lin, J. K. Huang, C. C. Lin, T. S. Kao, H. C. Kuo, and C. Y. Chang, “High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer,” Opt. Express 24(11), 11387–11395 (2016).
[Crossref] [PubMed]

A. I. Alhassan, R. M. Farrell, B. Saifaddin, A. Mughal, F. Wu, S. P. DenBaars, S. Nakamura, and J. S. Speck, “High luminous efficacy green light-emitting diodes with AlGaN cap layer,” Opt. Express 24(16), 17868–17873 (2016).
[Crossref] [PubMed]

C. Zhao, T. K. Ng, R. T. ElAfandy, A. Prabaswara, G. B. Consiglio, I. A. Ajia, I. S. Roqan, B. Janjua, C. Shen, J. Eid, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics,” Nano Lett. 16(7), 4616–4623 (2016).
[Crossref] [PubMed]

G. Zhang, Z. Li, X. Yuan, F. Wang, L. Fu, Z. Zhuang, F. F. Ren, R. Bin Liu, H. H. Zhang, Tan, and C. Jagadish, “Single nanowire green InGaN/GaN light emitting diodes,” Nanotechnology 27(43), 435205 (2016).
[Crossref] [PubMed]

2015 (4)

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong Carrier Localization Effect in Carrier Dynamics of 585 nm InGaN Amber Light-Emitting Diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

J. Bai, B. Xu, F. G. Guzman, K. Xing, Y. Gong, Y. Hou, and T. Wang, “(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates,” Appl. Phys. Lett. 107(26), 261103 (2015).
[Crossref]

L. Wang, Z. H. Zhang, and N. Wang, “Current crowding phenomenon: theoretical and direct correlation with the efficiency droop of light emitting diodes by a modified ABC model,” IEEE J. Quantum Electron. 51(1), 1–9 (2015).

D. D. Koleske, A. J. Fischer, B. N. Bryant, P. G. Kotula, and J. J. Wierer, “On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers,” J. Cryst. Growth 415(1), 57–64 (2015).
[Crossref]

2014 (1)

L. Wang, W. Lv, Z. Hao, and Y. Luo, “Recent progresses on InGaN quantum dot light-emitting diodes,” Front Optoelectron. 7(3), 293–299 (2014).
[Crossref]

2013 (5)

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. Li, J. Kang, P. Li, J. Ma, H. Wang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer,” Appl. Phys. Lett. 102(1), 011105 (2013).
[Crossref]

X. Zou, K. M. Wong, X. Zhu, W. C. Chong, J. Ma, and K. M. Lau, “High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates,” IEEE Electron Device Lett. 34(7), 903–905 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20-21) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization,” Appl. Phys. Express 6(9), 092101 (2013).
[Crossref]

2012 (1)

J. J. Wierer, D. D. Koleske, and S. R. Lee, “Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells,” Appl. Phys. Lett. 100(11), 111119 (2012).
[Crossref]

2011 (1)

E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98(16), 161107 (2011).
[Crossref]

2010 (3)

H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett. 97(13), 131114 (2010).
[Crossref]

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White Light Emitting Diodes with Super-High Luminous Efficacy,” J. Phys. D Appl. Phys. 43(35), 354002 (2010).
[Crossref]

T. Li, A. M. Fischer, Q. Y. Wei, F. A. Ponce, T. Detchprohm, and C. Wetzel, “Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells,” Appl. Phys. Lett. 96(3), 031906 (2010).
[Crossref]

2009 (4)

J. H. Ryou, P. D. Yoder, J. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

H. Zhao, G. Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

L. Wang, R. Li, Z. Yang, D. Li, T. Yu, N. Liu, L. Liu, W. Chen, and X. Hu, “High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes,” Appl. Phys. Lett. 95(21), 211104 (2009).
[Crossref]

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

2008 (1)

C. Bayram, F. H. Teherani, D. J. Rogers, and M. Razeghi, “A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN,” Appl. Phys. Lett. 93(8), 081111 (2008).
[Crossref]

2003 (1)

S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, and B. R. Luang, “Nitride-based LEDs with p-InGaN capping layer,” IEEE Trans. Electron Dev. 50(12), 2567–2570 (2003).
[Crossref]

Ajia, I. A.

C. Zhao, T. K. Ng, R. T. ElAfandy, A. Prabaswara, G. B. Consiglio, I. A. Ajia, I. S. Roqan, B. Janjua, C. Shen, J. Eid, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics,” Nano Lett. 16(7), 4616–4623 (2016).
[Crossref] [PubMed]

Alhassan, A. I.

Alyamani, A. Y.

C. Zhao, T. K. Ng, R. T. ElAfandy, A. Prabaswara, G. B. Consiglio, I. A. Ajia, I. S. Roqan, B. Janjua, C. Shen, J. Eid, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics,” Nano Lett. 16(7), 4616–4623 (2016).
[Crossref] [PubMed]

Bai, J.

J. Bai, B. Xu, F. G. Guzman, K. Xing, Y. Gong, Y. Hou, and T. Wang, “(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates,” Appl. Phys. Lett. 107(26), 261103 (2015).
[Crossref]

Bayram, C.

C. Bayram, F. H. Teherani, D. J. Rogers, and M. Razeghi, “A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN,” Appl. Phys. Lett. 93(8), 081111 (2008).
[Crossref]

Bin Liu, R.

G. Zhang, Z. Li, X. Yuan, F. Wang, L. Fu, Z. Zhuang, F. F. Ren, R. Bin Liu, H. H. Zhang, Tan, and C. Jagadish, “Single nanowire green InGaN/GaN light emitting diodes,” Nanotechnology 27(43), 435205 (2016).
[Crossref] [PubMed]

Bryant, B. N.

D. D. Koleske, A. J. Fischer, B. N. Bryant, P. G. Kotula, and J. J. Wierer, “On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers,” J. Cryst. Growth 415(1), 57–64 (2015).
[Crossref]

Chang, C. Y.

Chang, P. C.

S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, and B. R. Luang, “Nitride-based LEDs with p-InGaN capping layer,” IEEE Trans. Electron Dev. 50(12), 2567–2570 (2003).
[Crossref]

Chang, S. J.

S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, and B. R. Luang, “Nitride-based LEDs with p-InGaN capping layer,” IEEE Trans. Electron Dev. 50(12), 2567–2570 (2003).
[Crossref]

Chen, C. H.

S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, and B. R. Luang, “Nitride-based LEDs with p-InGaN capping layer,” IEEE Trans. Electron Dev. 50(12), 2567–2570 (2003).
[Crossref]

Chen, P. C.

S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, and B. R. Luang, “Nitride-based LEDs with p-InGaN capping layer,” IEEE Trans. Electron Dev. 50(12), 2567–2570 (2003).
[Crossref]

Chen, W.

L. Wang, R. Li, Z. Yang, D. Li, T. Yu, N. Liu, L. Liu, W. Chen, and X. Hu, “High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes,” Appl. Phys. Lett. 95(21), 211104 (2009).
[Crossref]

Chiu, C. H.

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

Choi, S.

J. H. Ryou, P. D. Yoder, J. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

Chong, W. C.

X. Zou, K. M. Wong, X. Zhu, W. C. Chong, J. Ma, and K. M. Lau, “High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates,” IEEE Electron Device Lett. 34(7), 903–905 (2013).
[Crossref]

Consiglio, G. B.

C. Zhao, T. K. Ng, R. T. ElAfandy, A. Prabaswara, G. B. Consiglio, I. A. Ajia, I. S. Roqan, B. Janjua, C. Shen, J. Eid, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics,” Nano Lett. 16(7), 4616–4623 (2016).
[Crossref] [PubMed]

Craven, M. D.

A. David, C. A. Hurni, N. G. Young, and M. D. Craven, “Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling,” Appl. Phys. Lett. 109(8), 083501 (2016).
[Crossref]

David, A.

A. David, C. A. Hurni, N. G. Young, and M. D. Craven, “Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling,” Appl. Phys. Lett. 109(8), 083501 (2016).
[Crossref]

Delaney, K. T.

E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98(16), 161107 (2011).
[Crossref]

DenBaars, S. P.

A. I. Alhassan, R. M. Farrell, B. Saifaddin, A. Mughal, F. Wu, S. P. DenBaars, S. Nakamura, and J. S. Speck, “High luminous efficacy green light-emitting diodes with AlGaN cap layer,” Opt. Express 24(16), 17868–17873 (2016).
[Crossref] [PubMed]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20-21) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

Detchprohm, T.

T. Li, A. M. Fischer, Q. Y. Wei, F. A. Ponce, T. Detchprohm, and C. Wetzel, “Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells,” Appl. Phys. Lett. 96(3), 031906 (2010).
[Crossref]

Dierolf, V.

H. Zhao, G. Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

Dupuis, R. D.

J. H. Ryou, P. D. Yoder, J. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

Eid, J.

C. Zhao, T. K. Ng, R. T. ElAfandy, A. Prabaswara, G. B. Consiglio, I. A. Ajia, I. S. Roqan, B. Janjua, C. Shen, J. Eid, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics,” Nano Lett. 16(7), 4616–4623 (2016).
[Crossref] [PubMed]

ElAfandy, R. T.

C. Zhao, T. K. Ng, R. T. ElAfandy, A. Prabaswara, G. B. Consiglio, I. A. Ajia, I. S. Roqan, B. Janjua, C. Shen, J. Eid, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics,” Nano Lett. 16(7), 4616–4623 (2016).
[Crossref] [PubMed]

El-Desouki, M. M.

C. Zhao, T. K. Ng, R. T. ElAfandy, A. Prabaswara, G. B. Consiglio, I. A. Ajia, I. S. Roqan, B. Janjua, C. Shen, J. Eid, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics,” Nano Lett. 16(7), 4616–4623 (2016).
[Crossref] [PubMed]

Farrell, R. M.

Fischer, A. J.

D. D. Koleske, A. J. Fischer, B. N. Bryant, P. G. Kotula, and J. J. Wierer, “On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers,” J. Cryst. Growth 415(1), 57–64 (2015).
[Crossref]

Fischer, A. M.

T. Li, A. M. Fischer, Q. Y. Wei, F. A. Ponce, T. Detchprohm, and C. Wetzel, “Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells,” Appl. Phys. Lett. 96(3), 031906 (2010).
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Fu, L.

G. Zhang, Z. Li, X. Yuan, F. Wang, L. Fu, Z. Zhuang, F. F. Ren, R. Bin Liu, H. H. Zhang, Tan, and C. Jagadish, “Single nanowire green InGaN/GaN light emitting diodes,” Nanotechnology 27(43), 435205 (2016).
[Crossref] [PubMed]

Fujito, K.

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20-21) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

Gong, Y.

J. Bai, B. Xu, F. G. Guzman, K. Xing, Y. Gong, Y. Hou, and T. Wang, “(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates,” Appl. Phys. Lett. 107(26), 261103 (2015).
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Guzman, F. G.

J. Bai, B. Xu, F. G. Guzman, K. Xing, Y. Gong, Y. Hou, and T. Wang, “(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates,” Appl. Phys. Lett. 107(26), 261103 (2015).
[Crossref]

Hao, Z.

L. Wang, W. Lv, Z. Hao, and Y. Luo, “Recent progresses on InGaN quantum dot light-emitting diodes,” Front Optoelectron. 7(3), 293–299 (2014).
[Crossref]

Hou, Y.

J. Bai, B. Xu, F. G. Guzman, K. Xing, Y. Gong, Y. Hou, and T. Wang, “(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates,” Appl. Phys. Lett. 107(26), 261103 (2015).
[Crossref]

Hu, X.

L. Wang, R. Li, Z. Yang, D. Li, T. Yu, N. Liu, L. Liu, W. Chen, and X. Hu, “High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes,” Appl. Phys. Lett. 95(21), 211104 (2009).
[Crossref]

Huang, G. S.

H. Zhao, G. Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

Huang, J. K.

Hung, H.

S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, and B. R. Luang, “Nitride-based LEDs with p-InGaN capping layer,” IEEE Trans. Electron Dev. 50(12), 2567–2570 (2003).
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Hurni, C. A.

A. David, C. A. Hurni, N. G. Young, and M. D. Craven, “Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling,” Appl. Phys. Lett. 109(8), 083501 (2016).
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Ichikawa, M.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White Light Emitting Diodes with Super-High Luminous Efficacy,” J. Phys. D Appl. Phys. 43(35), 354002 (2010).
[Crossref]

Jagadish, C.

G. Zhang, Z. Li, X. Yuan, F. Wang, L. Fu, Z. Zhuang, F. F. Ren, R. Bin Liu, H. H. Zhang, Tan, and C. Jagadish, “Single nanowire green InGaN/GaN light emitting diodes,” Nanotechnology 27(43), 435205 (2016).
[Crossref] [PubMed]

Janjua, B.

C. Zhao, T. K. Ng, R. T. ElAfandy, A. Prabaswara, G. B. Consiglio, I. A. Ajia, I. S. Roqan, B. Janjua, C. Shen, J. Eid, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics,” Nano Lett. 16(7), 4616–4623 (2016).
[Crossref] [PubMed]

Jhou, Y. D.

S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, and B. R. Luang, “Nitride-based LEDs with p-InGaN capping layer,” IEEE Trans. Electron Dev. 50(12), 2567–2570 (2003).
[Crossref]

Kang, J.

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong Carrier Localization Effect in Carrier Dynamics of 585 nm InGaN Amber Light-Emitting Diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

H. Li, J. Kang, P. Li, J. Ma, H. Wang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer,” Appl. Phys. Lett. 102(1), 011105 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization,” Appl. Phys. Express 6(9), 092101 (2013).
[Crossref]

Kao, T. S.

Kawaguchi, Y.

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20-21) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

Ke, C. C.

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

Kim, H.

J. H. Ryou, P. D. Yoder, J. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

Kim, H. J.

J. H. Ryou, P. D. Yoder, J. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

Kioupakis, E.

E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98(16), 161107 (2011).
[Crossref]

Koleske, D. D.

S. A. A. Muyeed, W. Sun, X. Wei, R. Song, D. D. Koleske, N. Tansu, and J. J. Wierer, “Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers,” AIP Adv. 7(10), 105312 (2017).
[Crossref]

D. D. Koleske, A. J. Fischer, B. N. Bryant, P. G. Kotula, and J. J. Wierer, “On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers,” J. Cryst. Growth 415(1), 57–64 (2015).
[Crossref]

J. J. Wierer, D. D. Koleske, and S. R. Lee, “Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells,” Appl. Phys. Lett. 100(11), 111119 (2012).
[Crossref]

Kotula, P. G.

D. D. Koleske, A. J. Fischer, B. N. Bryant, P. G. Kotula, and J. J. Wierer, “On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers,” J. Cryst. Growth 415(1), 57–64 (2015).
[Crossref]

Kuo, H. C.

A. J. Tzou, D. W. Lin, C. R. Yu, Z. Y. Li, Y. K. Liao, B. C. Lin, J. K. Huang, C. C. Lin, T. S. Kao, H. C. Kuo, and C. Y. Chang, “High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer,” Opt. Express 24(11), 11387–11395 (2016).
[Crossref] [PubMed]

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

Kuritzky, L. Y.

Lau, K. M.

X. Zou, K. M. Wong, X. Zhu, W. C. Chong, J. Ma, and K. M. Lau, “High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates,” IEEE Electron Device Lett. 34(7), 903–905 (2013).
[Crossref]

Lee, S. R.

J. J. Wierer, D. D. Koleske, and S. R. Lee, “Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells,” Appl. Phys. Lett. 100(11), 111119 (2012).
[Crossref]

Lee, Y. J.

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

Li, D.

L. Wang, R. Li, Z. Yang, D. Li, T. Yu, N. Liu, L. Liu, W. Chen, and X. Hu, “High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes,” Appl. Phys. Lett. 95(21), 211104 (2009).
[Crossref]

Li, H.

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong Carrier Localization Effect in Carrier Dynamics of 585 nm InGaN Amber Light-Emitting Diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. Li, J. Kang, P. Li, J. Ma, H. Wang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer,” Appl. Phys. Lett. 102(1), 011105 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization,” Appl. Phys. Express 6(9), 092101 (2013).
[Crossref]

Li, J.

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong Carrier Localization Effect in Carrier Dynamics of 585 nm InGaN Amber Light-Emitting Diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

H. Li, J. Kang, P. Li, J. Ma, H. Wang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer,” Appl. Phys. Lett. 102(1), 011105 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization,” Appl. Phys. Express 6(9), 092101 (2013).
[Crossref]

Li, P.

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong Carrier Localization Effect in Carrier Dynamics of 585 nm InGaN Amber Light-Emitting Diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

H. Li, J. Kang, P. Li, J. Ma, H. Wang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer,” Appl. Phys. Lett. 102(1), 011105 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization,” Appl. Phys. Express 6(9), 092101 (2013).
[Crossref]

Li, R.

L. Wang, R. Li, Z. Yang, D. Li, T. Yu, N. Liu, L. Liu, W. Chen, and X. Hu, “High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes,” Appl. Phys. Lett. 95(21), 211104 (2009).
[Crossref]

Li, T.

T. Li, A. M. Fischer, Q. Y. Wei, F. A. Ponce, T. Detchprohm, and C. Wetzel, “Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells,” Appl. Phys. Lett. 96(3), 031906 (2010).
[Crossref]

Li, X.

H. Zhao, G. Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

Li, Z.

G. Zhang, Z. Li, X. Yuan, F. Wang, L. Fu, Z. Zhuang, F. F. Ren, R. Bin Liu, H. H. Zhang, Tan, and C. Jagadish, “Single nanowire green InGaN/GaN light emitting diodes,” Nanotechnology 27(43), 435205 (2016).
[Crossref] [PubMed]

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong Carrier Localization Effect in Carrier Dynamics of 585 nm InGaN Amber Light-Emitting Diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. Li, J. Kang, P. Li, J. Ma, H. Wang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer,” Appl. Phys. Lett. 102(1), 011105 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization,” Appl. Phys. Express 6(9), 092101 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization,” Appl. Phys. Express 6(9), 092101 (2013).
[Crossref]

Li, Z. Y.

Liang, M.

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization,” Appl. Phys. Express 6(9), 092101 (2013).
[Crossref]

H. Li, J. Kang, P. Li, J. Ma, H. Wang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer,” Appl. Phys. Lett. 102(1), 011105 (2013).
[Crossref]

Liao, Y. K.

Lin, B. C.

Lin, C. C.

Lin, D. W.

Lin, P. C.

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

Liu, G.

H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett. 97(13), 131114 (2010).
[Crossref]

H. Zhao, G. Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

Liu, J.

J. H. Ryou, P. D. Yoder, J. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

Liu, L.

L. Wang, R. Li, Z. Yang, D. Li, T. Yu, N. Liu, L. Liu, W. Chen, and X. Hu, “High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes,” Appl. Phys. Lett. 95(21), 211104 (2009).
[Crossref]

Liu, N.

L. Wang, R. Li, Z. Yang, D. Li, T. Yu, N. Liu, L. Liu, W. Chen, and X. Hu, “High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes,” Appl. Phys. Lett. 95(21), 211104 (2009).
[Crossref]

Lochner, Z.

J. H. Ryou, P. D. Yoder, J. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

Lu, T. C.

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

Luang, B. R.

S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, and B. R. Luang, “Nitride-based LEDs with p-InGaN capping layer,” IEEE Trans. Electron Dev. 50(12), 2567–2570 (2003).
[Crossref]

Luo, Y.

L. Wang, W. Lv, Z. Hao, and Y. Luo, “Recent progresses on InGaN quantum dot light-emitting diodes,” Front Optoelectron. 7(3), 293–299 (2014).
[Crossref]

Lv, W.

L. Wang, W. Lv, Z. Hao, and Y. Luo, “Recent progresses on InGaN quantum dot light-emitting diodes,” Front Optoelectron. 7(3), 293–299 (2014).
[Crossref]

Ma, J.

X. Zou, K. M. Wong, X. Zhu, W. C. Chong, J. Ma, and K. M. Lau, “High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates,” IEEE Electron Device Lett. 34(7), 903–905 (2013).
[Crossref]

H. Li, J. Kang, P. Li, J. Ma, H. Wang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer,” Appl. Phys. Lett. 102(1), 011105 (2013).
[Crossref]

Mughal, A.

Mukai, T.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White Light Emitting Diodes with Super-High Luminous Efficacy,” J. Phys. D Appl. Phys. 43(35), 354002 (2010).
[Crossref]

Muyeed, S. A. A.

S. A. A. Muyeed, W. Sun, X. Wei, R. Song, D. D. Koleske, N. Tansu, and J. J. Wierer, “Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers,” AIP Adv. 7(10), 105312 (2017).
[Crossref]

Nakamura, S.

A. I. Alhassan, R. M. Farrell, B. Saifaddin, A. Mughal, F. Wu, S. P. DenBaars, S. Nakamura, and J. S. Speck, “High luminous efficacy green light-emitting diodes with AlGaN cap layer,” Opt. Express 24(16), 17868–17873 (2016).
[Crossref] [PubMed]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20-21) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

Narukawa, Y.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White Light Emitting Diodes with Super-High Luminous Efficacy,” J. Phys. D Appl. Phys. 43(35), 354002 (2010).
[Crossref]

Ng, T. K.

C. Zhao, T. K. Ng, R. T. ElAfandy, A. Prabaswara, G. B. Consiglio, I. A. Ajia, I. S. Roqan, B. Janjua, C. Shen, J. Eid, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics,” Nano Lett. 16(7), 4616–4623 (2016).
[Crossref] [PubMed]

Oh, S. H.

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20-21) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

Ooi, B. S.

C. Zhao, T. K. Ng, R. T. ElAfandy, A. Prabaswara, G. B. Consiglio, I. A. Ajia, I. S. Roqan, B. Janjua, C. Shen, J. Eid, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics,” Nano Lett. 16(7), 4616–4623 (2016).
[Crossref] [PubMed]

Penn, S. T.

H. Zhao, G. Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

Ponce, F. A.

T. Li, A. M. Fischer, Q. Y. Wei, F. A. Ponce, T. Detchprohm, and C. Wetzel, “Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells,” Appl. Phys. Lett. 96(3), 031906 (2010).
[Crossref]

Poplawsky, J. D.

H. Zhao, G. Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

Prabaswara, A.

C. Zhao, T. K. Ng, R. T. ElAfandy, A. Prabaswara, G. B. Consiglio, I. A. Ajia, I. S. Roqan, B. Janjua, C. Shen, J. Eid, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics,” Nano Lett. 16(7), 4616–4623 (2016).
[Crossref] [PubMed]

Razeghi, M.

C. Bayram, F. H. Teherani, D. J. Rogers, and M. Razeghi, “A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN,” Appl. Phys. Lett. 93(8), 081111 (2008).
[Crossref]

Ren, F. F.

G. Zhang, Z. Li, X. Yuan, F. Wang, L. Fu, Z. Zhuang, F. F. Ren, R. Bin Liu, H. H. Zhang, Tan, and C. Jagadish, “Single nanowire green InGaN/GaN light emitting diodes,” Nanotechnology 27(43), 435205 (2016).
[Crossref] [PubMed]

Rinke, P.

E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98(16), 161107 (2011).
[Crossref]

Rogers, D. J.

C. Bayram, F. H. Teherani, D. J. Rogers, and M. Razeghi, “A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN,” Appl. Phys. Lett. 93(8), 081111 (2008).
[Crossref]

Roqan, I. S.

C. Zhao, T. K. Ng, R. T. ElAfandy, A. Prabaswara, G. B. Consiglio, I. A. Ajia, I. S. Roqan, B. Janjua, C. Shen, J. Eid, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics,” Nano Lett. 16(7), 4616–4623 (2016).
[Crossref] [PubMed]

Ryou, J. H.

J. H. Ryou, P. D. Yoder, J. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

Saifaddin, B.

Sanga, D.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White Light Emitting Diodes with Super-High Luminous Efficacy,” J. Phys. D Appl. Phys. 43(35), 354002 (2010).
[Crossref]

Sano, M.

Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, “White Light Emitting Diodes with Super-High Luminous Efficacy,” J. Phys. D Appl. Phys. 43(35), 354002 (2010).
[Crossref]

Shen, C.

C. Zhao, T. K. Ng, R. T. ElAfandy, A. Prabaswara, G. B. Consiglio, I. A. Ajia, I. S. Roqan, B. Janjua, C. Shen, J. Eid, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics,” Nano Lett. 16(7), 4616–4623 (2016).
[Crossref] [PubMed]

Song, R.

S. A. A. Muyeed, W. Sun, X. Wei, R. Song, D. D. Koleske, N. Tansu, and J. J. Wierer, “Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers,” AIP Adv. 7(10), 105312 (2017).
[Crossref]

Speck, J. S.

Su, Y. K.

S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, and B. R. Luang, “Nitride-based LEDs with p-InGaN capping layer,” IEEE Trans. Electron Dev. 50(12), 2567–2570 (2003).
[Crossref]

Sun, W.

S. A. A. Muyeed, W. Sun, X. Wei, R. Song, D. D. Koleske, N. Tansu, and J. J. Wierer, “Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers,” AIP Adv. 7(10), 105312 (2017).
[Crossref]

Tan,

G. Zhang, Z. Li, X. Yuan, F. Wang, L. Fu, Z. Zhuang, F. F. Ren, R. Bin Liu, H. H. Zhang, Tan, and C. Jagadish, “Single nanowire green InGaN/GaN light emitting diodes,” Nanotechnology 27(43), 435205 (2016).
[Crossref] [PubMed]

Tanaka, S.

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20-21) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

Tansu, N.

S. A. A. Muyeed, W. Sun, X. Wei, R. Song, D. D. Koleske, N. Tansu, and J. J. Wierer, “Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers,” AIP Adv. 7(10), 105312 (2017).
[Crossref]

H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett. 97(13), 131114 (2010).
[Crossref]

H. Zhao, G. Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

Teherani, F. H.

C. Bayram, F. H. Teherani, D. J. Rogers, and M. Razeghi, “A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN,” Appl. Phys. Lett. 93(8), 081111 (2008).
[Crossref]

Tzou, A. J.

Van de Walle, C. G.

E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98(16), 161107 (2011).
[Crossref]

Wang, F.

G. Zhang, Z. Li, X. Yuan, F. Wang, L. Fu, Z. Zhuang, F. F. Ren, R. Bin Liu, H. H. Zhang, Tan, and C. Jagadish, “Single nanowire green InGaN/GaN light emitting diodes,” Nanotechnology 27(43), 435205 (2016).
[Crossref] [PubMed]

Wang, G.

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong Carrier Localization Effect in Carrier Dynamics of 585 nm InGaN Amber Light-Emitting Diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. Li, J. Kang, P. Li, J. Ma, H. Wang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer,” Appl. Phys. Lett. 102(1), 011105 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization,” Appl. Phys. Express 6(9), 092101 (2013).
[Crossref]

Wang, H.

H. Li, J. Kang, P. Li, J. Ma, H. Wang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer,” Appl. Phys. Lett. 102(1), 011105 (2013).
[Crossref]

Wang, L.

L. Wang, Z. H. Zhang, and N. Wang, “Current crowding phenomenon: theoretical and direct correlation with the efficiency droop of light emitting diodes by a modified ABC model,” IEEE J. Quantum Electron. 51(1), 1–9 (2015).

L. Wang, W. Lv, Z. Hao, and Y. Luo, “Recent progresses on InGaN quantum dot light-emitting diodes,” Front Optoelectron. 7(3), 293–299 (2014).
[Crossref]

L. Wang, R. Li, Z. Yang, D. Li, T. Yu, N. Liu, L. Liu, W. Chen, and X. Hu, “High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes,” Appl. Phys. Lett. 95(21), 211104 (2009).
[Crossref]

Wang, N.

L. Wang, Z. H. Zhang, and N. Wang, “Current crowding phenomenon: theoretical and direct correlation with the efficiency droop of light emitting diodes by a modified ABC model,” IEEE J. Quantum Electron. 51(1), 1–9 (2015).

Wang, S. C.

Y. J. Lee, C. H. Chiu, C. C. Ke, P. C. Lin, T. C. Lu, H. C. Kuo, and S. C. Wang, “Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1137–1143 (2009).
[Crossref]

Wang, S. M.

S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, S. M. Wang, and B. R. Luang, “Nitride-based LEDs with p-InGaN capping layer,” IEEE Trans. Electron Dev. 50(12), 2567–2570 (2003).
[Crossref]

Wang, T.

J. Bai, B. Xu, F. G. Guzman, K. Xing, Y. Gong, Y. Hou, and T. Wang, “(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates,” Appl. Phys. Lett. 107(26), 261103 (2015).
[Crossref]

Wei, Q. Y.

T. Li, A. M. Fischer, Q. Y. Wei, F. A. Ponce, T. Detchprohm, and C. Wetzel, “Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells,” Appl. Phys. Lett. 96(3), 031906 (2010).
[Crossref]

Wei, X.

S. A. A. Muyeed, W. Sun, X. Wei, R. Song, D. D. Koleske, N. Tansu, and J. J. Wierer, “Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers,” AIP Adv. 7(10), 105312 (2017).
[Crossref]

Weisbuch, C.

Wetzel, C.

T. Li, A. M. Fischer, Q. Y. Wei, F. A. Ponce, T. Detchprohm, and C. Wetzel, “Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells,” Appl. Phys. Lett. 96(3), 031906 (2010).
[Crossref]

Wierer, J. J.

S. A. A. Muyeed, W. Sun, X. Wei, R. Song, D. D. Koleske, N. Tansu, and J. J. Wierer, “Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers,” AIP Adv. 7(10), 105312 (2017).
[Crossref]

D. D. Koleske, A. J. Fischer, B. N. Bryant, P. G. Kotula, and J. J. Wierer, “On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers,” J. Cryst. Growth 415(1), 57–64 (2015).
[Crossref]

J. J. Wierer, D. D. Koleske, and S. R. Lee, “Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells,” Appl. Phys. Lett. 100(11), 111119 (2012).
[Crossref]

Wong, K. M.

X. Zou, K. M. Wong, X. Zhu, W. C. Chong, J. Ma, and K. M. Lau, “High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates,” IEEE Electron Device Lett. 34(7), 903–905 (2013).
[Crossref]

Wu, F.

A. I. Alhassan, R. M. Farrell, B. Saifaddin, A. Mughal, F. Wu, S. P. DenBaars, S. Nakamura, and J. S. Speck, “High luminous efficacy green light-emitting diodes with AlGaN cap layer,” Opt. Express 24(16), 17868–17873 (2016).
[Crossref] [PubMed]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20-21) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

Xing, K.

J. Bai, B. Xu, F. G. Guzman, K. Xing, Y. Gong, Y. Hou, and T. Wang, “(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates,” Appl. Phys. Lett. 107(26), 261103 (2015).
[Crossref]

Xu, B.

J. Bai, B. Xu, F. G. Guzman, K. Xing, Y. Gong, Y. Hou, and T. Wang, “(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates,” Appl. Phys. Lett. 107(26), 261103 (2015).
[Crossref]

Yang, Z.

L. Wang, R. Li, Z. Yang, D. Li, T. Yu, N. Liu, L. Liu, W. Chen, and X. Hu, “High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes,” Appl. Phys. Lett. 95(21), 211104 (2009).
[Crossref]

Yi, X.

P. Li, H. Li, Z. Li, J. Kang, X. Yi, J. Li, and G. Wang, “Strong Carrier Localization Effect in Carrier Dynamics of 585 nm InGaN Amber Light-Emitting Diodes,” J. Appl. Phys. 117(7), 073101 (2015).
[Crossref]

H. Li, J. Kang, P. Li, J. Ma, H. Wang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer,” Appl. Phys. Lett. 102(1), 011105 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization,” Appl. Phys. Express 6(9), 092101 (2013).
[Crossref]

Yoder, P. D.

J. H. Ryou, P. D. Yoder, J. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of quantum-confined stark effect in InGaN-based quantum wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009).
[Crossref]

Young, N. G.

A. David, C. A. Hurni, N. G. Young, and M. D. Craven, “Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling,” Appl. Phys. Lett. 109(8), 083501 (2016).
[Crossref]

Yu, C. R.

Yu, T.

L. Wang, R. Li, Z. Yang, D. Li, T. Yu, N. Liu, L. Liu, W. Chen, and X. Hu, “High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes,” Appl. Phys. Lett. 95(21), 211104 (2009).
[Crossref]

Yuan, X.

G. Zhang, Z. Li, X. Yuan, F. Wang, L. Fu, Z. Zhuang, F. F. Ren, R. Bin Liu, H. H. Zhang, Tan, and C. Jagadish, “Single nanowire green InGaN/GaN light emitting diodes,” Nanotechnology 27(43), 435205 (2016).
[Crossref] [PubMed]

Zhang, G.

G. Zhang, Z. Li, X. Yuan, F. Wang, L. Fu, Z. Zhuang, F. F. Ren, R. Bin Liu, H. H. Zhang, Tan, and C. Jagadish, “Single nanowire green InGaN/GaN light emitting diodes,” Nanotechnology 27(43), 435205 (2016).
[Crossref] [PubMed]

Zhang, H. H.

G. Zhang, Z. Li, X. Yuan, F. Wang, L. Fu, Z. Zhuang, F. F. Ren, R. Bin Liu, H. H. Zhang, Tan, and C. Jagadish, “Single nanowire green InGaN/GaN light emitting diodes,” Nanotechnology 27(43), 435205 (2016).
[Crossref] [PubMed]

Zhang, Y.

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization,” Appl. Phys. Express 6(9), 092101 (2013).
[Crossref]

Zhang, Z. H.

L. Wang, Z. H. Zhang, and N. Wang, “Current crowding phenomenon: theoretical and direct correlation with the efficiency droop of light emitting diodes by a modified ABC model,” IEEE J. Quantum Electron. 51(1), 1–9 (2015).

Zhao, C.

C. Zhao, T. K. Ng, R. T. ElAfandy, A. Prabaswara, G. B. Consiglio, I. A. Ajia, I. S. Roqan, B. Janjua, C. Shen, J. Eid, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics,” Nano Lett. 16(7), 4616–4623 (2016).
[Crossref] [PubMed]

Zhao, H.

H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett. 97(13), 131114 (2010).
[Crossref]

H. Zhao, G. Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

Zhao, Y.

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20-21) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

Zhu, X.

X. Zou, K. M. Wong, X. Zhu, W. C. Chong, J. Ma, and K. M. Lau, “High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates,” IEEE Electron Device Lett. 34(7), 903–905 (2013).
[Crossref]

Zhuang, Z.

G. Zhang, Z. Li, X. Yuan, F. Wang, L. Fu, Z. Zhuang, F. F. Ren, R. Bin Liu, H. H. Zhang, Tan, and C. Jagadish, “Single nanowire green InGaN/GaN light emitting diodes,” Nanotechnology 27(43), 435205 (2016).
[Crossref] [PubMed]

Zou, X.

X. Zou, K. M. Wong, X. Zhu, W. C. Chong, J. Ma, and K. M. Lau, “High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates,” IEEE Electron Device Lett. 34(7), 903–905 (2013).
[Crossref]

AIP Adv. (1)

S. A. A. Muyeed, W. Sun, X. Wei, R. Song, D. D. Koleske, N. Tansu, and J. J. Wierer, “Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers,” AIP Adv. 7(10), 105312 (2017).
[Crossref]

Appl. Phys. Express (3)

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization,” Appl. Phys. Express 6(9), 092101 (2013).
[Crossref]

Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green semipolar (20-21) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth,” Appl. Phys. Express 6(6), 062102 (2013).
[Crossref]

H. Li, P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, and G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well,” Appl. Phys. Express 6(5), 052102 (2013).
[Crossref]

Appl. Phys. Lett. (10)

C. Bayram, F. H. Teherani, D. J. Rogers, and M. Razeghi, “A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN,” Appl. Phys. Lett. 93(8), 081111 (2008).
[Crossref]

H. Zhao, G. Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

L. Wang, R. Li, Z. Yang, D. Li, T. Yu, N. Liu, L. Liu, W. Chen, and X. Hu, “High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes,” Appl. Phys. Lett. 95(21), 211104 (2009).
[Crossref]

H. Zhao, G. Liu, and N. Tansu, “Analysis of InGaN-delta-InN quantum wells for light-emitting diodes,” Appl. Phys. Lett. 97(13), 131114 (2010).
[Crossref]

T. Li, A. M. Fischer, Q. Y. Wei, F. A. Ponce, T. Detchprohm, and C. Wetzel, “Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells,” Appl. Phys. Lett. 96(3), 031906 (2010).
[Crossref]

J. Bai, B. Xu, F. G. Guzman, K. Xing, Y. Gong, Y. Hou, and T. Wang, “(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates,” Appl. Phys. Lett. 107(26), 261103 (2015).
[Crossref]

E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98(16), 161107 (2011).
[Crossref]

A. David, C. A. Hurni, N. G. Young, and M. D. Craven, “Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling,” Appl. Phys. Lett. 109(8), 083501 (2016).
[Crossref]

J. J. Wierer, D. D. Koleske, and S. R. Lee, “Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells,” Appl. Phys. Lett. 100(11), 111119 (2012).
[Crossref]

H. Li, J. Kang, P. Li, J. Ma, H. Wang, M. Liang, Z. Li, J. Li, X. Yi, and G. Wang, “Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer,” Appl. Phys. Lett. 102(1), 011105 (2013).
[Crossref]

Front Optoelectron. (1)

L. Wang, W. Lv, Z. Hao, and Y. Luo, “Recent progresses on InGaN quantum dot light-emitting diodes,” Front Optoelectron. 7(3), 293–299 (2014).
[Crossref]

IEEE Electron Device Lett. (1)

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Opt. Express (3)

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Figures (8)

Fig. 1
Fig. 1 TMIn and TEGa flow switch diagram and temperature profile during MQWs growth.
Fig. 2
Fig. 2 (a) Green emission of the fabricated green LEDs at low injection current of 3 mA and (b) The packaged green LEDs.
Fig. 3
Fig. 3 (a) XRD rocking curve along [0002] and [10–12]; (b) RSM measured along [10–15].
Fig. 4
Fig. 4 (a) HRTEM image of the p-type layers/AlGaN layers/the first two InGaN QW; (b) HRTEM results of InGaN/GaN MQWs; (c) X-ray spectroscopy analysis (EDXA) on the Al and In composition distribution profile across the area labeled in (a); (d) (002) XRD ω-2theta scan.
Fig. 5
Fig. 5 (a) A comparison of the calculated electrostatic fields at 20 A/cm2. Band diagrams of (b) conventionial green LEDs and (c) our green LEDs.
Fig. 6
Fig. 6 (a) EL spectrum of the InGaN green LEDs at 20 A/cm2 and (b) Emission wavelength and FWHM versus current.
Fig. 7
Fig. 7 Current-power and current-voltage (L-I-V) characteristics.
Fig. 8
Fig. 8 (a) Dependence of EQE and WPE on driven current; (b) Luminous flux and efficacy of the InGaN green LEDs at various currents.

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