Abstract

We demonstrate the transfer printing of passive silicon devices on a silicon-on-insulator target waveguide wafer. Adiabatic taper structures and directional coupler structures were designed for 1310 nm and 1600 nm wavelength coupling tolerant for ± 1 µm misalignment. The release of silicon devices from the silicon substrate was realized by underetching the buried oxide layer while protecting the back-end stack. Devices were successfully picked by a PDMS stamp, by breaking the tethers that kept the silicon coupons in place on the source substrate, and printed with high alignment accuracy on a silicon photonic target wafer. Coupling losses of −1.5 +/− 0.5 dB for the adiabatic taper at 1310 nm wavelength and −0.5 +/− 0.5 dB for the directional coupler at 1600 nm wavelength are obtained.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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2017 (1)

2016 (2)

J. Verbist, J. Zhang, B. Moeneclaey, W. Soenen, J. Van Weerdenburg, R. Van Uden, C. Okonkwo, J. Bauwelinck, G. Roelkens, and X. Yin, “A 40 Gbaud QPSK/16-QAM integrated silicon coherent receiver,” IEEE Photonics Technol. Lett. 28(19), 2070–2073 (2016).
[Crossref]

A. De Groote, P. Cardile, A. Z. Subramanian, A. M. Fecioru, C. Bower, D. Delbeke, R. Baets, and G. Roelkens, “Transfer-printing-based integration of single-mode waveguide-coupled III-V-on-silicon broadband light emitters,” Opt. Express 24(13), 13754–13762 (2016).
[Crossref] [PubMed]

2013 (2)

D. Feng, W. Qian, H. Liang, C. C. Kung, Z. Zhou, Z. Li, J. S. Levi, R. Shafiiha, J. Fong, B. J. Luff, and M. Ashghari, “High-Speed GeSi Electroabsorption Modulator on the SOI Waveguide Platform,” IEEE J. Sel. Top. Quantum Electron. 19(6), 34011710 (2013).
[Crossref]

D. Moss, R. Morandotti, A. L. Gaeta, and M. Lipson, “New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics,” Nat. Photonics 7(8), 597–607 (2013).
[Crossref]

2012 (1)

J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbert, “Wafer-scale integration of group III–V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6(9), 610–614 (2012).
[Crossref]

2010 (1)

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

2009 (1)

2007 (2)

W. M. J. Green, M. J. Rooks, L. Sekaric, and Y. A. Vlasov, “Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator,” Opt. Express 15(25), 17106–17113 (2007).
[Crossref] [PubMed]

X. Feng, M. A. Meitl, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Competing Fracture in Kinetically Controlled Transfer Printing,” Langmuir 23(25), 12555–12560 (2007).
[Crossref] [PubMed]

Abbasi, A.

J. Zhang, A. De Groote, A. Abbasi, R. Loi, J. O’Callaghan, B. Corbett, A. J. Trindade, C. A. Bower, and G. Roelkens, “A Silicon Photonics Fiber-To-The-Home Transceiver Array based on Transfer-Printing-Based Integration of III-V Photodetectors,” Opt. Express 25(13), 14290–14299 (2017).
[Crossref] [PubMed]

G. Muliuk, N. Ye, J. Zhang, A. Abbasi, A. J. Trindade, C. Bower, D. Van Thourhout, and G. Roelkens, “Transfer Print Integration of 40Gbps Germanium Photodiodes onto Silicon Photonic ICs,” in ECOC (2017), paper PDP.C.4.

Ashghari, M.

D. Feng, W. Qian, H. Liang, C. C. Kung, Z. Zhou, Z. Li, J. S. Levi, R. Shafiiha, J. Fong, B. J. Luff, and M. Ashghari, “High-Speed GeSi Electroabsorption Modulator on the SOI Waveguide Platform,” IEEE J. Sel. Top. Quantum Electron. 19(6), 34011710 (2013).
[Crossref]

Baets, R.

A. De Groote, P. Cardile, A. Z. Subramanian, A. M. Fecioru, C. Bower, D. Delbeke, R. Baets, and G. Roelkens, “Transfer-printing-based integration of single-mode waveguide-coupled III-V-on-silicon broadband light emitters,” Opt. Express 24(13), 13754–13762 (2016).
[Crossref] [PubMed]

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Bauwelinck, J.

J. Verbist, J. Zhang, B. Moeneclaey, W. Soenen, J. Van Weerdenburg, R. Van Uden, C. Okonkwo, J. Bauwelinck, G. Roelkens, and X. Yin, “A 40 Gbaud QPSK/16-QAM integrated silicon coherent receiver,” IEEE Photonics Technol. Lett. 28(19), 2070–2073 (2016).
[Crossref]

Bogaerts, W.

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Bonafede, S.

D. Gomez, K. Ghosal, M. A. Meitl, S. Bonafede, C. Prevatte, T. Moore, B. Raymond, D. Kneeburg, A. Fecioru, A. J. Trindade, and C. A. Bower, “Process Capability and Elastomer Stamp Lifetime in Micro Transfer Printing,” in 2016 IEEE 66th Electronic Components and Technology Conference (2016), pp. 681–687.
[Crossref]

Bowen, A. M.

X. Feng, M. A. Meitl, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Competing Fracture in Kinetically Controlled Transfer Printing,” Langmuir 23(25), 12555–12560 (2007).
[Crossref] [PubMed]

Bower, C.

A. De Groote, P. Cardile, A. Z. Subramanian, A. M. Fecioru, C. Bower, D. Delbeke, R. Baets, and G. Roelkens, “Transfer-printing-based integration of single-mode waveguide-coupled III-V-on-silicon broadband light emitters,” Opt. Express 24(13), 13754–13762 (2016).
[Crossref] [PubMed]

J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbert, “Wafer-scale integration of group III–V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6(9), 610–614 (2012).
[Crossref]

G. Muliuk, N. Ye, J. Zhang, A. Abbasi, A. J. Trindade, C. Bower, D. Van Thourhout, and G. Roelkens, “Transfer Print Integration of 40Gbps Germanium Photodiodes onto Silicon Photonic ICs,” in ECOC (2017), paper PDP.C.4.

Bower, C. A.

J. Zhang, A. De Groote, A. Abbasi, R. Loi, J. O’Callaghan, B. Corbett, A. J. Trindade, C. A. Bower, and G. Roelkens, “A Silicon Photonics Fiber-To-The-Home Transceiver Array based on Transfer-Printing-Based Integration of III-V Photodetectors,” Opt. Express 25(13), 14290–14299 (2017).
[Crossref] [PubMed]

D. Gomez, K. Ghosal, M. A. Meitl, S. Bonafede, C. Prevatte, T. Moore, B. Raymond, D. Kneeburg, A. Fecioru, A. J. Trindade, and C. A. Bower, “Process Capability and Elastomer Stamp Lifetime in Micro Transfer Printing,” in 2016 IEEE 66th Electronic Components and Technology Conference (2016), pp. 681–687.
[Crossref]

C. A. Bower, E. Menard, and P. E. Garrou, “Transfer Printing: An Approach for Massively Parallel Assembly of Microscale Devices,” in Electronic Components and Technology Conference (2008), pp. 1105–1109.
[Crossref]

Brouckaert, J.

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Cardile, P.

Cassan, E.

Corbert, B.

J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbert, “Wafer-scale integration of group III–V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6(9), 610–614 (2012).
[Crossref]

Corbett, B.

Crozat, P.

Damlencourt, J. F.

De Groote, A.

De Vos, K.

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Delbeke, D.

Dumon, P.

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Fecioru, A.

D. Gomez, K. Ghosal, M. A. Meitl, S. Bonafede, C. Prevatte, T. Moore, B. Raymond, D. Kneeburg, A. Fecioru, A. J. Trindade, and C. A. Bower, “Process Capability and Elastomer Stamp Lifetime in Micro Transfer Printing,” in 2016 IEEE 66th Electronic Components and Technology Conference (2016), pp. 681–687.
[Crossref]

Fecioru, A. M.

Fédéli, J. M.

Feng, D.

D. Feng, W. Qian, H. Liang, C. C. Kung, Z. Zhou, Z. Li, J. S. Levi, R. Shafiiha, J. Fong, B. J. Luff, and M. Ashghari, “High-Speed GeSi Electroabsorption Modulator on the SOI Waveguide Platform,” IEEE J. Sel. Top. Quantum Electron. 19(6), 34011710 (2013).
[Crossref]

Feng, X.

X. Feng, M. A. Meitl, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Competing Fracture in Kinetically Controlled Transfer Printing,” Langmuir 23(25), 12555–12560 (2007).
[Crossref] [PubMed]

Fong, J.

D. Feng, W. Qian, H. Liang, C. C. Kung, Z. Zhou, Z. Li, J. S. Levi, R. Shafiiha, J. Fong, B. J. Luff, and M. Ashghari, “High-Speed GeSi Electroabsorption Modulator on the SOI Waveguide Platform,” IEEE J. Sel. Top. Quantum Electron. 19(6), 34011710 (2013).
[Crossref]

Gaeta, A. L.

D. Moss, R. Morandotti, A. L. Gaeta, and M. Lipson, “New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics,” Nat. Photonics 7(8), 597–607 (2013).
[Crossref]

Garrou, P. E.

C. A. Bower, E. Menard, and P. E. Garrou, “Transfer Printing: An Approach for Massively Parallel Assembly of Microscale Devices,” in Electronic Components and Technology Conference (2008), pp. 1105–1109.
[Crossref]

Ghosal, K.

D. Gomez, K. Ghosal, M. A. Meitl, S. Bonafede, C. Prevatte, T. Moore, B. Raymond, D. Kneeburg, A. Fecioru, A. J. Trindade, and C. A. Bower, “Process Capability and Elastomer Stamp Lifetime in Micro Transfer Printing,” in 2016 IEEE 66th Electronic Components and Technology Conference (2016), pp. 681–687.
[Crossref]

Gomez, D.

D. Gomez, K. Ghosal, M. A. Meitl, S. Bonafede, C. Prevatte, T. Moore, B. Raymond, D. Kneeburg, A. Fecioru, A. J. Trindade, and C. A. Bower, “Process Capability and Elastomer Stamp Lifetime in Micro Transfer Printing,” in 2016 IEEE 66th Electronic Components and Technology Conference (2016), pp. 681–687.
[Crossref]

Green, W. M. J.

Gubbins, M. A.

J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbert, “Wafer-scale integration of group III–V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6(9), 610–614 (2012).
[Crossref]

Huang, Y.

X. Feng, M. A. Meitl, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Competing Fracture in Kinetically Controlled Transfer Printing,” Langmuir 23(25), 12555–12560 (2007).
[Crossref] [PubMed]

Justice, J.

J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbert, “Wafer-scale integration of group III–V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6(9), 610–614 (2012).
[Crossref]

Kneeburg, D.

D. Gomez, K. Ghosal, M. A. Meitl, S. Bonafede, C. Prevatte, T. Moore, B. Raymond, D. Kneeburg, A. Fecioru, A. J. Trindade, and C. A. Bower, “Process Capability and Elastomer Stamp Lifetime in Micro Transfer Printing,” in 2016 IEEE 66th Electronic Components and Technology Conference (2016), pp. 681–687.
[Crossref]

Kung, C. C.

D. Feng, W. Qian, H. Liang, C. C. Kung, Z. Zhou, Z. Li, J. S. Levi, R. Shafiiha, J. Fong, B. J. Luff, and M. Ashghari, “High-Speed GeSi Electroabsorption Modulator on the SOI Waveguide Platform,” IEEE J. Sel. Top. Quantum Electron. 19(6), 34011710 (2013).
[Crossref]

Laval, S.

Lecunff, Y.

Levi, J. S.

D. Feng, W. Qian, H. Liang, C. C. Kung, Z. Zhou, Z. Li, J. S. Levi, R. Shafiiha, J. Fong, B. J. Luff, and M. Ashghari, “High-Speed GeSi Electroabsorption Modulator on the SOI Waveguide Platform,” IEEE J. Sel. Top. Quantum Electron. 19(6), 34011710 (2013).
[Crossref]

Li, Z.

D. Feng, W. Qian, H. Liang, C. C. Kung, Z. Zhou, Z. Li, J. S. Levi, R. Shafiiha, J. Fong, B. J. Luff, and M. Ashghari, “High-Speed GeSi Electroabsorption Modulator on the SOI Waveguide Platform,” IEEE J. Sel. Top. Quantum Electron. 19(6), 34011710 (2013).
[Crossref]

Liang, H.

D. Feng, W. Qian, H. Liang, C. C. Kung, Z. Zhou, Z. Li, J. S. Levi, R. Shafiiha, J. Fong, B. J. Luff, and M. Ashghari, “High-Speed GeSi Electroabsorption Modulator on the SOI Waveguide Platform,” IEEE J. Sel. Top. Quantum Electron. 19(6), 34011710 (2013).
[Crossref]

Lipson, M.

D. Moss, R. Morandotti, A. L. Gaeta, and M. Lipson, “New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics,” Nat. Photonics 7(8), 597–607 (2013).
[Crossref]

Loi, R.

Luff, B. J.

D. Feng, W. Qian, H. Liang, C. C. Kung, Z. Zhou, Z. Li, J. S. Levi, R. Shafiiha, J. Fong, B. J. Luff, and M. Ashghari, “High-Speed GeSi Electroabsorption Modulator on the SOI Waveguide Platform,” IEEE J. Sel. Top. Quantum Electron. 19(6), 34011710 (2013).
[Crossref]

Marris-Morini, D.

Meitl, M.

J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbert, “Wafer-scale integration of group III–V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6(9), 610–614 (2012).
[Crossref]

Meitl, M. A.

X. Feng, M. A. Meitl, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Competing Fracture in Kinetically Controlled Transfer Printing,” Langmuir 23(25), 12555–12560 (2007).
[Crossref] [PubMed]

D. Gomez, K. Ghosal, M. A. Meitl, S. Bonafede, C. Prevatte, T. Moore, B. Raymond, D. Kneeburg, A. Fecioru, A. J. Trindade, and C. A. Bower, “Process Capability and Elastomer Stamp Lifetime in Micro Transfer Printing,” in 2016 IEEE 66th Electronic Components and Technology Conference (2016), pp. 681–687.
[Crossref]

Menard, E.

C. A. Bower, E. Menard, and P. E. Garrou, “Transfer Printing: An Approach for Massively Parallel Assembly of Microscale Devices,” in Electronic Components and Technology Conference (2008), pp. 1105–1109.
[Crossref]

Moeneclaey, B.

J. Verbist, J. Zhang, B. Moeneclaey, W. Soenen, J. Van Weerdenburg, R. Van Uden, C. Okonkwo, J. Bauwelinck, G. Roelkens, and X. Yin, “A 40 Gbaud QPSK/16-QAM integrated silicon coherent receiver,” IEEE Photonics Technol. Lett. 28(19), 2070–2073 (2016).
[Crossref]

Mooney, M. B.

J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbert, “Wafer-scale integration of group III–V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6(9), 610–614 (2012).
[Crossref]

Moore, T.

D. Gomez, K. Ghosal, M. A. Meitl, S. Bonafede, C. Prevatte, T. Moore, B. Raymond, D. Kneeburg, A. Fecioru, A. J. Trindade, and C. A. Bower, “Process Capability and Elastomer Stamp Lifetime in Micro Transfer Printing,” in 2016 IEEE 66th Electronic Components and Technology Conference (2016), pp. 681–687.
[Crossref]

Morandotti, R.

D. Moss, R. Morandotti, A. L. Gaeta, and M. Lipson, “New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics,” Nat. Photonics 7(8), 597–607 (2013).
[Crossref]

Moss, D.

D. Moss, R. Morandotti, A. L. Gaeta, and M. Lipson, “New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics,” Nat. Photonics 7(8), 597–607 (2013).
[Crossref]

Muliuk, G.

G. Muliuk, N. Ye, J. Zhang, A. Abbasi, A. J. Trindade, C. Bower, D. Van Thourhout, and G. Roelkens, “Transfer Print Integration of 40Gbps Germanium Photodiodes onto Silicon Photonic ICs,” in ECOC (2017), paper PDP.C.4.

Nuzzo, R. G.

X. Feng, M. A. Meitl, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Competing Fracture in Kinetically Controlled Transfer Printing,” Langmuir 23(25), 12555–12560 (2007).
[Crossref] [PubMed]

O’Callaghan, J.

Okonkwo, C.

J. Verbist, J. Zhang, B. Moeneclaey, W. Soenen, J. Van Weerdenburg, R. Van Uden, C. Okonkwo, J. Bauwelinck, G. Roelkens, and X. Yin, “A 40 Gbaud QPSK/16-QAM integrated silicon coherent receiver,” IEEE Photonics Technol. Lett. 28(19), 2070–2073 (2016).
[Crossref]

Osmond, J.

Prevatte, C.

D. Gomez, K. Ghosal, M. A. Meitl, S. Bonafede, C. Prevatte, T. Moore, B. Raymond, D. Kneeburg, A. Fecioru, A. J. Trindade, and C. A. Bower, “Process Capability and Elastomer Stamp Lifetime in Micro Transfer Printing,” in 2016 IEEE 66th Electronic Components and Technology Conference (2016), pp. 681–687.
[Crossref]

Qian, W.

D. Feng, W. Qian, H. Liang, C. C. Kung, Z. Zhou, Z. Li, J. S. Levi, R. Shafiiha, J. Fong, B. J. Luff, and M. Ashghari, “High-Speed GeSi Electroabsorption Modulator on the SOI Waveguide Platform,” IEEE J. Sel. Top. Quantum Electron. 19(6), 34011710 (2013).
[Crossref]

Raymond, B.

D. Gomez, K. Ghosal, M. A. Meitl, S. Bonafede, C. Prevatte, T. Moore, B. Raymond, D. Kneeburg, A. Fecioru, A. J. Trindade, and C. A. Bower, “Process Capability and Elastomer Stamp Lifetime in Micro Transfer Printing,” in 2016 IEEE 66th Electronic Components and Technology Conference (2016), pp. 681–687.
[Crossref]

Roelkens, G.

J. Zhang, A. De Groote, A. Abbasi, R. Loi, J. O’Callaghan, B. Corbett, A. J. Trindade, C. A. Bower, and G. Roelkens, “A Silicon Photonics Fiber-To-The-Home Transceiver Array based on Transfer-Printing-Based Integration of III-V Photodetectors,” Opt. Express 25(13), 14290–14299 (2017).
[Crossref] [PubMed]

J. Verbist, J. Zhang, B. Moeneclaey, W. Soenen, J. Van Weerdenburg, R. Van Uden, C. Okonkwo, J. Bauwelinck, G. Roelkens, and X. Yin, “A 40 Gbaud QPSK/16-QAM integrated silicon coherent receiver,” IEEE Photonics Technol. Lett. 28(19), 2070–2073 (2016).
[Crossref]

A. De Groote, P. Cardile, A. Z. Subramanian, A. M. Fecioru, C. Bower, D. Delbeke, R. Baets, and G. Roelkens, “Transfer-printing-based integration of single-mode waveguide-coupled III-V-on-silicon broadband light emitters,” Opt. Express 24(13), 13754–13762 (2016).
[Crossref] [PubMed]

G. Muliuk, N. Ye, J. Zhang, A. Abbasi, A. J. Trindade, C. Bower, D. Van Thourhout, and G. Roelkens, “Transfer Print Integration of 40Gbps Germanium Photodiodes onto Silicon Photonic ICs,” in ECOC (2017), paper PDP.C.4.

Rogers, J. A.

X. Feng, M. A. Meitl, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Competing Fracture in Kinetically Controlled Transfer Printing,” Langmuir 23(25), 12555–12560 (2007).
[Crossref] [PubMed]

Rooks, M. J.

Sekaric, L.

Selvaraja, S. K.

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Shafiiha, R.

D. Feng, W. Qian, H. Liang, C. C. Kung, Z. Zhou, Z. Li, J. S. Levi, R. Shafiiha, J. Fong, B. J. Luff, and M. Ashghari, “High-Speed GeSi Electroabsorption Modulator on the SOI Waveguide Platform,” IEEE J. Sel. Top. Quantum Electron. 19(6), 34011710 (2013).
[Crossref]

Soenen, W.

J. Verbist, J. Zhang, B. Moeneclaey, W. Soenen, J. Van Weerdenburg, R. Van Uden, C. Okonkwo, J. Bauwelinck, G. Roelkens, and X. Yin, “A 40 Gbaud QPSK/16-QAM integrated silicon coherent receiver,” IEEE Photonics Technol. Lett. 28(19), 2070–2073 (2016).
[Crossref]

Subramanian, A. Z.

Trindade, A. J.

J. Zhang, A. De Groote, A. Abbasi, R. Loi, J. O’Callaghan, B. Corbett, A. J. Trindade, C. A. Bower, and G. Roelkens, “A Silicon Photonics Fiber-To-The-Home Transceiver Array based on Transfer-Printing-Based Integration of III-V Photodetectors,” Opt. Express 25(13), 14290–14299 (2017).
[Crossref] [PubMed]

D. Gomez, K. Ghosal, M. A. Meitl, S. Bonafede, C. Prevatte, T. Moore, B. Raymond, D. Kneeburg, A. Fecioru, A. J. Trindade, and C. A. Bower, “Process Capability and Elastomer Stamp Lifetime in Micro Transfer Printing,” in 2016 IEEE 66th Electronic Components and Technology Conference (2016), pp. 681–687.
[Crossref]

G. Muliuk, N. Ye, J. Zhang, A. Abbasi, A. J. Trindade, C. Bower, D. Van Thourhout, and G. Roelkens, “Transfer Print Integration of 40Gbps Germanium Photodiodes onto Silicon Photonic ICs,” in ECOC (2017), paper PDP.C.4.

Van Thourhout, D.

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

G. Muliuk, N. Ye, J. Zhang, A. Abbasi, A. J. Trindade, C. Bower, D. Van Thourhout, and G. Roelkens, “Transfer Print Integration of 40Gbps Germanium Photodiodes onto Silicon Photonic ICs,” in ECOC (2017), paper PDP.C.4.

Van Uden, R.

J. Verbist, J. Zhang, B. Moeneclaey, W. Soenen, J. Van Weerdenburg, R. Van Uden, C. Okonkwo, J. Bauwelinck, G. Roelkens, and X. Yin, “A 40 Gbaud QPSK/16-QAM integrated silicon coherent receiver,” IEEE Photonics Technol. Lett. 28(19), 2070–2073 (2016).
[Crossref]

Van Weerdenburg, J.

J. Verbist, J. Zhang, B. Moeneclaey, W. Soenen, J. Van Weerdenburg, R. Van Uden, C. Okonkwo, J. Bauwelinck, G. Roelkens, and X. Yin, “A 40 Gbaud QPSK/16-QAM integrated silicon coherent receiver,” IEEE Photonics Technol. Lett. 28(19), 2070–2073 (2016).
[Crossref]

Verbist, J.

J. Verbist, J. Zhang, B. Moeneclaey, W. Soenen, J. Van Weerdenburg, R. Van Uden, C. Okonkwo, J. Bauwelinck, G. Roelkens, and X. Yin, “A 40 Gbaud QPSK/16-QAM integrated silicon coherent receiver,” IEEE Photonics Technol. Lett. 28(19), 2070–2073 (2016).
[Crossref]

Vivien, L.

Vlasov, Y. A.

Ye, N.

G. Muliuk, N. Ye, J. Zhang, A. Abbasi, A. J. Trindade, C. Bower, D. Van Thourhout, and G. Roelkens, “Transfer Print Integration of 40Gbps Germanium Photodiodes onto Silicon Photonic ICs,” in ECOC (2017), paper PDP.C.4.

Yin, X.

J. Verbist, J. Zhang, B. Moeneclaey, W. Soenen, J. Van Weerdenburg, R. Van Uden, C. Okonkwo, J. Bauwelinck, G. Roelkens, and X. Yin, “A 40 Gbaud QPSK/16-QAM integrated silicon coherent receiver,” IEEE Photonics Technol. Lett. 28(19), 2070–2073 (2016).
[Crossref]

Zhang, J.

J. Zhang, A. De Groote, A. Abbasi, R. Loi, J. O’Callaghan, B. Corbett, A. J. Trindade, C. A. Bower, and G. Roelkens, “A Silicon Photonics Fiber-To-The-Home Transceiver Array based on Transfer-Printing-Based Integration of III-V Photodetectors,” Opt. Express 25(13), 14290–14299 (2017).
[Crossref] [PubMed]

J. Verbist, J. Zhang, B. Moeneclaey, W. Soenen, J. Van Weerdenburg, R. Van Uden, C. Okonkwo, J. Bauwelinck, G. Roelkens, and X. Yin, “A 40 Gbaud QPSK/16-QAM integrated silicon coherent receiver,” IEEE Photonics Technol. Lett. 28(19), 2070–2073 (2016).
[Crossref]

G. Muliuk, N. Ye, J. Zhang, A. Abbasi, A. J. Trindade, C. Bower, D. Van Thourhout, and G. Roelkens, “Transfer Print Integration of 40Gbps Germanium Photodiodes onto Silicon Photonic ICs,” in ECOC (2017), paper PDP.C.4.

Zhou, Z.

D. Feng, W. Qian, H. Liang, C. C. Kung, Z. Zhou, Z. Li, J. S. Levi, R. Shafiiha, J. Fong, B. J. Luff, and M. Ashghari, “High-Speed GeSi Electroabsorption Modulator on the SOI Waveguide Platform,” IEEE J. Sel. Top. Quantum Electron. 19(6), 34011710 (2013).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (2)

D. Feng, W. Qian, H. Liang, C. C. Kung, Z. Zhou, Z. Li, J. S. Levi, R. Shafiiha, J. Fong, B. J. Luff, and M. Ashghari, “High-Speed GeSi Electroabsorption Modulator on the SOI Waveguide Platform,” IEEE J. Sel. Top. Quantum Electron. 19(6), 34011710 (2013).
[Crossref]

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

IEEE Photonics Technol. Lett. (1)

J. Verbist, J. Zhang, B. Moeneclaey, W. Soenen, J. Van Weerdenburg, R. Van Uden, C. Okonkwo, J. Bauwelinck, G. Roelkens, and X. Yin, “A 40 Gbaud QPSK/16-QAM integrated silicon coherent receiver,” IEEE Photonics Technol. Lett. 28(19), 2070–2073 (2016).
[Crossref]

Langmuir (1)

X. Feng, M. A. Meitl, A. M. Bowen, Y. Huang, R. G. Nuzzo, and J. A. Rogers, “Competing Fracture in Kinetically Controlled Transfer Printing,” Langmuir 23(25), 12555–12560 (2007).
[Crossref] [PubMed]

Nat. Photonics (2)

D. Moss, R. Morandotti, A. L. Gaeta, and M. Lipson, “New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics,” Nat. Photonics 7(8), 597–607 (2013).
[Crossref]

J. Justice, C. Bower, M. Meitl, M. B. Mooney, M. A. Gubbins, and B. Corbert, “Wafer-scale integration of group III–V lasers on silicon using transfer printing of epitaxial layers,” Nat. Photonics 6(9), 610–614 (2012).
[Crossref]

Opt. Express (4)

Other (5)

G. Muliuk, N. Ye, J. Zhang, A. Abbasi, A. J. Trindade, C. Bower, D. Van Thourhout, and G. Roelkens, “Transfer Print Integration of 40Gbps Germanium Photodiodes onto Silicon Photonic ICs,” in ECOC (2017), paper PDP.C.4.

C. A. Bower, E. Menard, and P. E. Garrou, “Transfer Printing: An Approach for Massively Parallel Assembly of Microscale Devices,” in Electronic Components and Technology Conference (2008), pp. 1105–1109.
[Crossref]

D. Gomez, K. Ghosal, M. A. Meitl, S. Bonafede, C. Prevatte, T. Moore, B. Raymond, D. Kneeburg, A. Fecioru, A. J. Trindade, and C. A. Bower, “Process Capability and Elastomer Stamp Lifetime in Micro Transfer Printing,” in 2016 IEEE 66th Electronic Components and Technology Conference (2016), pp. 681–687.
[Crossref]

Cognex Vision Pro ® Machine Vision, website: http://www.cognex.com/products/machine-vision/visionpro-vision-software/ , accessed November 2017.

R. Soref, “Silicon Photonics Technology: Past, Present and Future”. SPIE Proceedings, 19, 5730 (2005).
[Crossref]

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Figures (11)

Fig. 1
Fig. 1 Concept of transfer printing for photonic integrated circuit manufacturing.
Fig. 2
Fig. 2 Proposed adiabatic taper (a) and directional coupler (b) structure.
Fig. 3
Fig. 3 (a) Misalignment simulations for both the taper and directional coupler structure, sweeping over taper and directional coupler widths; (b) Bandwidth simulations of adiabatic taper and directional coupler structures assuming perfect alignment.
Fig. 4
Fig. 4 Layout of passive device coupons: (a) adiabatic taper coupon; (b) directional coupler coupon.
Fig. 5
Fig. 5 Layout of silicon photonic target structures: (a) for the adiabatic coupling structure; (b) for the directional coupler structures.
Fig. 6
Fig. 6 Top view of silicon photonic tether structures.
Fig. 7
Fig. 7 Schematic representation of release process flow.
Fig. 8
Fig. 8 Schematic representation of the transfer printing process.
Fig. 9
Fig. 9 Transfer printed coupons on the target waveguide circuit: (a) adiabatic taper coupon; (b) directional coupler coupon.
Fig. 10
Fig. 10 Measurement results. (a) Adiabatic taper transmission per one coupler measured at 1290 – 1360 nm; (b) directional coupler transmission per one coupler measured at 1500-1600 nm wavelength range and compared with simulation results.
Fig. 11
Fig. 11 Focused ion beam cross-section of transfer printed directional coupler interface.

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