Abstract

Twelve InGaN MQW LED samples with varying well thickness grown via metal-organic chemical vaper deposition (MOCVD) are investigated. It is observed from electroluminescence (EL) measurement that at low current densities, the peak energy shifts to blue with increasing current, and when the current change by fixed increment, the peak energy shifts to blue end to different extent among samples. This blue shift was expected to be stronger when the well thickness increases, however, for well widths above 5 nm we observe a decrease in emission energy. Since no relaxation was detected from reciprocal space mapping (RSM), the deteriorated homogeneity is found to be responsible for this phenomenon. Temperature dependent photoluminescence (TDPL) results analyzed by band-tail model fitting show that the localization effect gets more prominent with increasing well thickness. It is found that elevating the growth temperature of active region from 710°C to 750°C significantly improves the homogeneity of InGaN layer.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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  1. S. Nakamura, T. Mukai, and M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett. 64, 1687–1689 (1994).
    [Crossref]
  2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Ridge-geometry InGaN multi-quantum-well-structure laser diodes,” Appl. Phys. Lett. 69, 1477–1479 (1996).
    [Crossref]
  3. N. Lu and I. Ferguson, “Iii-nitrides for energy production: photovoltaic and thermoelectric applications,” Semicond. Sci. Technol. 28, 074023 (2013).
    [Crossref]
  4. B. J. Baliga, “Gallium nitride devices for power electronic applications,” Semicond. Sci. Technol. 28, 074011 (2013).
    [Crossref]
  5. C. Du, C. Jiang, P. Zuo, X. Huang, X. Pu, Z. Zhao, Y. Zhou, L. Li, H. Chen, W. Hu, and Z. L. Wang, “Piezo-phototronic effect controlled dual-channel visible light communication (PVLC) using InGaN/GaN multiquantum well nanopillars,” Small. 11, 6071–6077 (2015).
    [Crossref] [PubMed]
  6. A. Sztein, J. Haberstroh, J. E. Bowers, S. P. DenBaars, and S. Nakamura, “Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN,” J. Appl. Phys. 113, 183707 (2013).
    [Crossref]
  7. R. Chandiramouli and S. Sriram, “First-principles investigation on band structure and electronic transport property of gallium nitride nanoribbon,” Nano. 9, 1450020 (2014).
    [Crossref]
  8. N. Vico Triviño, U. Dharanipathy, J.-F. Carlin, Z. Diao, R. Houdre, and N. Grandjean, “Integrated photonics on silicon with wide bandgap GaN semiconductor,” Appl. Phys. Lett. 102, 081120 (2013).
    [Crossref]
  9. H. Yang, W. Wang, Z. Liu, and G. Li, “Homogeneous epitaxial growth of aln single-crystalline films on 2 inch-diameter si (111) substrates by pulsed laser deposition,” CrystEngComm. 15, 7171–7176 (2013).
    [Crossref]
  10. W. Wang, W. Yang, H. Wang, and G. Li, “Epitaxial growth of GaN films on unconventional oxide substrates,” J. Mater. Chem. C 2, 9342–9358 (2014).
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  12. J. Lingrong, L. Jianping, T. Aiqin, C. Yang, L. Zengcheng, Z. Liqun, Z. Shuming, L. Deyao, M. Ikeda, and Y. Hui, “Gan-based green laser diodes,” J. Semicond. 37, 111001 (2016).
    [Crossref]
  13. M. Aumer, S. LeBoeuf, B. Moody, and S. Bedair, “Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells,” Appl. Phys. Lett. 79, 3803–3805 (2001).
    [Crossref]
  14. T. Ko, T. Lu, T. Wang, J. Chen, R. Gao, M. Lo, H. Kuo, S. Wang, and J. Shen, “Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 104, 093106 (2008).
    [Crossref]
  15. D. Zhao, J. Yang, Z. Liu, P. Chen, J. Zhu, D. Jiang, Y. Shi, H. Wang, L. Duan, L. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38, 051001 (2017).
    [Crossref]
  16. Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, and S. Nakamura, “Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm,” Appl. Phys. Lett. 70, 981–983 (1997).
    [Crossref]
  17. F. C. Massabuau, P. Chen, M. Horton, S. Rhode, C. Ren, T. O’Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. Dunin-Borkowski, and R. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121, 013104 (2017).
    [Crossref]
  18. W. Liu, D. Zhao, D. Jiang, D. Shi, J. Zhu, Z. Liu, P. Chen, J. Yang, F. Liang, S. Liu, X. Yao, L. Zhang, W. Wang, M. Li, Y. Zhang, and G. Du, “Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells,” Opt. Express 26, 3427–3434 (2018).
    [Crossref] [PubMed]
  19. C. Li, Z. Ji, J. Li, M. Xu, H. Xiao, and X. Xu, “Electroluminescence properties of InGaN/GaN multiple quantum well-based leds with different indium contents and different well widths,” Sci. Reports 7, 15301 (2017).
    [Crossref]
  20. X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
    [Crossref]
  21. Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined stark effect in germanium quantum-well structures on silicon,” Nature 437, 1334 (2005).
    [Crossref] [PubMed]
  22. H. Schömig, S. Halm, A. Forchel, G. Bacher, J. Off, and F. Scholz, “Probing individual localization centers in an InGaN/GaN quantum well,” Phys. Rev. Lett. 92, 106802 (2004).
    [Crossref] [PubMed]
  23. F. Wang, Z. Ji, Q. Wang, X. Wang, S. Qu, X. Xu, Y. Lv, and Z. Feng, “Green and blue emissions in phase-separated InGaN quantum wells,” J. Appl. Phys. 114, 163525 (2013).
    [Crossref]
  24. Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” physica. 34, 149–154 (1967).
    [Crossref]
  25. Q. Li, S. Xu, M. Xie, and S. Tong, “Origin of the S-shaped temperature dependence of luminescent peaks from semiconductors,” J. Physics: Condens. Matter 17, 4853–4858 (2005).
  26. Q. Li, S. Xu, M. Xie, and S. Tong, “A model for steady-state luminescence of localized-state ensemble,” EPL Europhys. Lett. 71, 994 (2005).
    [Crossref]
  27. P. G. Eliseev, P. Perlin, J. Lee, and M. Osiński, “blue temperature-induced shift and band-tail emission in InGaN-based light sources,” Appl. Phys. Lett. 71, 569–571 (1997).
    [Crossref]
  28. P. G. Eliseev, M. Osinski, J. Lee, T. Sugahara, and S. Sakai, “Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1−xN grown on sapphire,” J. Electron. Mater. 29, 332–341 (2000).
    [Crossref]

2018 (1)

2017 (4)

D. Zhao, J. Yang, Z. Liu, P. Chen, J. Zhu, D. Jiang, Y. Shi, H. Wang, L. Duan, L. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38, 051001 (2017).
[Crossref]

F. C. Massabuau, P. Chen, M. Horton, S. Rhode, C. Ren, T. O’Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. Dunin-Borkowski, and R. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121, 013104 (2017).
[Crossref]

C. Li, Z. Ji, J. Li, M. Xu, H. Xiao, and X. Xu, “Electroluminescence properties of InGaN/GaN multiple quantum well-based leds with different indium contents and different well widths,” Sci. Reports 7, 15301 (2017).
[Crossref]

X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
[Crossref]

2016 (1)

J. Lingrong, L. Jianping, T. Aiqin, C. Yang, L. Zengcheng, Z. Liqun, Z. Shuming, L. Deyao, M. Ikeda, and Y. Hui, “Gan-based green laser diodes,” J. Semicond. 37, 111001 (2016).
[Crossref]

2015 (1)

C. Du, C. Jiang, P. Zuo, X. Huang, X. Pu, Z. Zhao, Y. Zhou, L. Li, H. Chen, W. Hu, and Z. L. Wang, “Piezo-phototronic effect controlled dual-channel visible light communication (PVLC) using InGaN/GaN multiquantum well nanopillars,” Small. 11, 6071–6077 (2015).
[Crossref] [PubMed]

2014 (2)

R. Chandiramouli and S. Sriram, “First-principles investigation on band structure and electronic transport property of gallium nitride nanoribbon,” Nano. 9, 1450020 (2014).
[Crossref]

W. Wang, W. Yang, H. Wang, and G. Li, “Epitaxial growth of GaN films on unconventional oxide substrates,” J. Mater. Chem. C 2, 9342–9358 (2014).
[Crossref]

2013 (6)

N. Vico Triviño, U. Dharanipathy, J.-F. Carlin, Z. Diao, R. Houdre, and N. Grandjean, “Integrated photonics on silicon with wide bandgap GaN semiconductor,” Appl. Phys. Lett. 102, 081120 (2013).
[Crossref]

H. Yang, W. Wang, Z. Liu, and G. Li, “Homogeneous epitaxial growth of aln single-crystalline films on 2 inch-diameter si (111) substrates by pulsed laser deposition,” CrystEngComm. 15, 7171–7176 (2013).
[Crossref]

A. Sztein, J. Haberstroh, J. E. Bowers, S. P. DenBaars, and S. Nakamura, “Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN,” J. Appl. Phys. 113, 183707 (2013).
[Crossref]

N. Lu and I. Ferguson, “Iii-nitrides for energy production: photovoltaic and thermoelectric applications,” Semicond. Sci. Technol. 28, 074023 (2013).
[Crossref]

B. J. Baliga, “Gallium nitride devices for power electronic applications,” Semicond. Sci. Technol. 28, 074011 (2013).
[Crossref]

F. Wang, Z. Ji, Q. Wang, X. Wang, S. Qu, X. Xu, Y. Lv, and Z. Feng, “Green and blue emissions in phase-separated InGaN quantum wells,” J. Appl. Phys. 114, 163525 (2013).
[Crossref]

2008 (1)

T. Ko, T. Lu, T. Wang, J. Chen, R. Gao, M. Lo, H. Kuo, S. Wang, and J. Shen, “Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 104, 093106 (2008).
[Crossref]

2005 (3)

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined stark effect in germanium quantum-well structures on silicon,” Nature 437, 1334 (2005).
[Crossref] [PubMed]

Q. Li, S. Xu, M. Xie, and S. Tong, “Origin of the S-shaped temperature dependence of luminescent peaks from semiconductors,” J. Physics: Condens. Matter 17, 4853–4858 (2005).

Q. Li, S. Xu, M. Xie, and S. Tong, “A model for steady-state luminescence of localized-state ensemble,” EPL Europhys. Lett. 71, 994 (2005).
[Crossref]

2004 (1)

H. Schömig, S. Halm, A. Forchel, G. Bacher, J. Off, and F. Scholz, “Probing individual localization centers in an InGaN/GaN quantum well,” Phys. Rev. Lett. 92, 106802 (2004).
[Crossref] [PubMed]

2001 (1)

M. Aumer, S. LeBoeuf, B. Moody, and S. Bedair, “Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells,” Appl. Phys. Lett. 79, 3803–3805 (2001).
[Crossref]

2000 (1)

P. G. Eliseev, M. Osinski, J. Lee, T. Sugahara, and S. Sakai, “Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1−xN grown on sapphire,” J. Electron. Mater. 29, 332–341 (2000).
[Crossref]

1997 (2)

P. G. Eliseev, P. Perlin, J. Lee, and M. Osiński, “blue temperature-induced shift and band-tail emission in InGaN-based light sources,” Appl. Phys. Lett. 71, 569–571 (1997).
[Crossref]

Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, and S. Nakamura, “Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm,” Appl. Phys. Lett. 70, 981–983 (1997).
[Crossref]

1996 (1)

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Ridge-geometry InGaN multi-quantum-well-structure laser diodes,” Appl. Phys. Lett. 69, 1477–1479 (1996).
[Crossref]

1994 (1)

S. Nakamura, T. Mukai, and M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett. 64, 1687–1689 (1994).
[Crossref]

1967 (1)

Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” physica. 34, 149–154 (1967).
[Crossref]

Adivarahan, V.

M. A. Khan and V. Adivarahan, “Fabrication technique for high frequency, high power group iii nitride electronic devices,” (2013). US Patent 8,476,125.

Aiqin, T.

J. Lingrong, L. Jianping, T. Aiqin, C. Yang, L. Zengcheng, Z. Liqun, Z. Shuming, L. Deyao, M. Ikeda, and Y. Hui, “Gan-based green laser diodes,” J. Semicond. 37, 111001 (2016).
[Crossref]

Aumer, M.

M. Aumer, S. LeBoeuf, B. Moody, and S. Bedair, “Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells,” Appl. Phys. Lett. 79, 3803–3805 (2001).
[Crossref]

Bacher, G.

H. Schömig, S. Halm, A. Forchel, G. Bacher, J. Off, and F. Scholz, “Probing individual localization centers in an InGaN/GaN quantum well,” Phys. Rev. Lett. 92, 106802 (2004).
[Crossref] [PubMed]

Baliga, B. J.

B. J. Baliga, “Gallium nitride devices for power electronic applications,” Semicond. Sci. Technol. 28, 074011 (2013).
[Crossref]

Bedair, S.

M. Aumer, S. LeBoeuf, B. Moody, and S. Bedair, “Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells,” Appl. Phys. Lett. 79, 3803–3805 (2001).
[Crossref]

Bowers, J. E.

A. Sztein, J. Haberstroh, J. E. Bowers, S. P. DenBaars, and S. Nakamura, “Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN,” J. Appl. Phys. 113, 183707 (2013).
[Crossref]

Carlin, J.-F.

N. Vico Triviño, U. Dharanipathy, J.-F. Carlin, Z. Diao, R. Houdre, and N. Grandjean, “Integrated photonics on silicon with wide bandgap GaN semiconductor,” Appl. Phys. Lett. 102, 081120 (2013).
[Crossref]

Chandiramouli, R.

R. Chandiramouli and S. Sriram, “First-principles investigation on band structure and electronic transport property of gallium nitride nanoribbon,” Nano. 9, 1450020 (2014).
[Crossref]

Chen, H.

C. Du, C. Jiang, P. Zuo, X. Huang, X. Pu, Z. Zhao, Y. Zhou, L. Li, H. Chen, W. Hu, and Z. L. Wang, “Piezo-phototronic effect controlled dual-channel visible light communication (PVLC) using InGaN/GaN multiquantum well nanopillars,” Small. 11, 6071–6077 (2015).
[Crossref] [PubMed]

Chen, J.

T. Ko, T. Lu, T. Wang, J. Chen, R. Gao, M. Lo, H. Kuo, S. Wang, and J. Shen, “Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 104, 093106 (2008).
[Crossref]

Chen, P.

W. Liu, D. Zhao, D. Jiang, D. Shi, J. Zhu, Z. Liu, P. Chen, J. Yang, F. Liang, S. Liu, X. Yao, L. Zhang, W. Wang, M. Li, Y. Zhang, and G. Du, “Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells,” Opt. Express 26, 3427–3434 (2018).
[Crossref] [PubMed]

X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
[Crossref]

D. Zhao, J. Yang, Z. Liu, P. Chen, J. Zhu, D. Jiang, Y. Shi, H. Wang, L. Duan, L. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38, 051001 (2017).
[Crossref]

F. C. Massabuau, P. Chen, M. Horton, S. Rhode, C. Ren, T. O’Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. Dunin-Borkowski, and R. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121, 013104 (2017).
[Crossref]

DenBaars, S. P.

A. Sztein, J. Haberstroh, J. E. Bowers, S. P. DenBaars, and S. Nakamura, “Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN,” J. Appl. Phys. 113, 183707 (2013).
[Crossref]

Deyao, L.

J. Lingrong, L. Jianping, T. Aiqin, C. Yang, L. Zengcheng, Z. Liqun, Z. Shuming, L. Deyao, M. Ikeda, and Y. Hui, “Gan-based green laser diodes,” J. Semicond. 37, 111001 (2016).
[Crossref]

Dharanipathy, U.

N. Vico Triviño, U. Dharanipathy, J.-F. Carlin, Z. Diao, R. Houdre, and N. Grandjean, “Integrated photonics on silicon with wide bandgap GaN semiconductor,” Appl. Phys. Lett. 102, 081120 (2013).
[Crossref]

Diao, Z.

N. Vico Triviño, U. Dharanipathy, J.-F. Carlin, Z. Diao, R. Houdre, and N. Grandjean, “Integrated photonics on silicon with wide bandgap GaN semiconductor,” Appl. Phys. Lett. 102, 081120 (2013).
[Crossref]

Du, C.

C. Du, C. Jiang, P. Zuo, X. Huang, X. Pu, Z. Zhao, Y. Zhou, L. Li, H. Chen, W. Hu, and Z. L. Wang, “Piezo-phototronic effect controlled dual-channel visible light communication (PVLC) using InGaN/GaN multiquantum well nanopillars,” Small. 11, 6071–6077 (2015).
[Crossref] [PubMed]

Du, G.

Du, G.-T.

X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
[Crossref]

Duan, L.

D. Zhao, J. Yang, Z. Liu, P. Chen, J. Zhu, D. Jiang, Y. Shi, H. Wang, L. Duan, L. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38, 051001 (2017).
[Crossref]

Dunin-Borkowski, R.

F. C. Massabuau, P. Chen, M. Horton, S. Rhode, C. Ren, T. O’Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. Dunin-Borkowski, and R. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121, 013104 (2017).
[Crossref]

Eliseev, P. G.

P. G. Eliseev, M. Osinski, J. Lee, T. Sugahara, and S. Sakai, “Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1−xN grown on sapphire,” J. Electron. Mater. 29, 332–341 (2000).
[Crossref]

P. G. Eliseev, P. Perlin, J. Lee, and M. Osiński, “blue temperature-induced shift and band-tail emission in InGaN-based light sources,” Appl. Phys. Lett. 71, 569–571 (1997).
[Crossref]

Feng, Z.

F. Wang, Z. Ji, Q. Wang, X. Wang, S. Qu, X. Xu, Y. Lv, and Z. Feng, “Green and blue emissions in phase-separated InGaN quantum wells,” J. Appl. Phys. 114, 163525 (2013).
[Crossref]

Ferguson, I.

N. Lu and I. Ferguson, “Iii-nitrides for energy production: photovoltaic and thermoelectric applications,” Semicond. Sci. Technol. 28, 074023 (2013).
[Crossref]

Forchel, A.

H. Schömig, S. Halm, A. Forchel, G. Bacher, J. Off, and F. Scholz, “Probing individual localization centers in an InGaN/GaN quantum well,” Phys. Rev. Lett. 92, 106802 (2004).
[Crossref] [PubMed]

Fujita, S.

Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, and S. Nakamura, “Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm,” Appl. Phys. Lett. 70, 981–983 (1997).
[Crossref]

Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, and S. Nakamura, “Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm,” Appl. Phys. Lett. 70, 981–983 (1997).
[Crossref]

Funato, M.

Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, and S. Nakamura, “Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm,” Appl. Phys. Lett. 70, 981–983 (1997).
[Crossref]

Gao, R.

T. Ko, T. Lu, T. Wang, J. Chen, R. Gao, M. Lo, H. Kuo, S. Wang, and J. Shen, “Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 104, 093106 (2008).
[Crossref]

Ge, Y.

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined stark effect in germanium quantum-well structures on silicon,” Nature 437, 1334 (2005).
[Crossref] [PubMed]

Grandjean, N.

N. Vico Triviño, U. Dharanipathy, J.-F. Carlin, Z. Diao, R. Houdre, and N. Grandjean, “Integrated photonics on silicon with wide bandgap GaN semiconductor,” Appl. Phys. Lett. 102, 081120 (2013).
[Crossref]

Haberstroh, J.

A. Sztein, J. Haberstroh, J. E. Bowers, S. P. DenBaars, and S. Nakamura, “Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN,” J. Appl. Phys. 113, 183707 (2013).
[Crossref]

Halm, S.

H. Schömig, S. Halm, A. Forchel, G. Bacher, J. Off, and F. Scholz, “Probing individual localization centers in an InGaN/GaN quantum well,” Phys. Rev. Lett. 92, 106802 (2004).
[Crossref] [PubMed]

Harris, J. S.

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined stark effect in germanium quantum-well structures on silicon,” Nature 437, 1334 (2005).
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X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
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Horton, M.

F. C. Massabuau, P. Chen, M. Horton, S. Rhode, C. Ren, T. O’Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. Dunin-Borkowski, and R. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121, 013104 (2017).
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N. Vico Triviño, U. Dharanipathy, J.-F. Carlin, Z. Diao, R. Houdre, and N. Grandjean, “Integrated photonics on silicon with wide bandgap GaN semiconductor,” Appl. Phys. Lett. 102, 081120 (2013).
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C. Du, C. Jiang, P. Zuo, X. Huang, X. Pu, Z. Zhao, Y. Zhou, L. Li, H. Chen, W. Hu, and Z. L. Wang, “Piezo-phototronic effect controlled dual-channel visible light communication (PVLC) using InGaN/GaN multiquantum well nanopillars,” Small. 11, 6071–6077 (2015).
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Huang, X.

C. Du, C. Jiang, P. Zuo, X. Huang, X. Pu, Z. Zhao, Y. Zhou, L. Li, H. Chen, W. Hu, and Z. L. Wang, “Piezo-phototronic effect controlled dual-channel visible light communication (PVLC) using InGaN/GaN multiquantum well nanopillars,” Small. 11, 6071–6077 (2015).
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J. Lingrong, L. Jianping, T. Aiqin, C. Yang, L. Zengcheng, Z. Liqun, Z. Shuming, L. Deyao, M. Ikeda, and Y. Hui, “Gan-based green laser diodes,” J. Semicond. 37, 111001 (2016).
[Crossref]

Humphreys, C. J.

F. C. Massabuau, P. Chen, M. Horton, S. Rhode, C. Ren, T. O’Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. Dunin-Borkowski, and R. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121, 013104 (2017).
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J. Lingrong, L. Jianping, T. Aiqin, C. Yang, L. Zengcheng, Z. Liqun, Z. Shuming, L. Deyao, M. Ikeda, and Y. Hui, “Gan-based green laser diodes,” J. Semicond. 37, 111001 (2016).
[Crossref]

Iwasa, N.

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Ridge-geometry InGaN multi-quantum-well-structure laser diodes,” Appl. Phys. Lett. 69, 1477–1479 (1996).
[Crossref]

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C. Li, Z. Ji, J. Li, M. Xu, H. Xiao, and X. Xu, “Electroluminescence properties of InGaN/GaN multiple quantum well-based leds with different indium contents and different well widths,” Sci. Reports 7, 15301 (2017).
[Crossref]

F. Wang, Z. Ji, Q. Wang, X. Wang, S. Qu, X. Xu, Y. Lv, and Z. Feng, “Green and blue emissions in phase-separated InGaN quantum wells,” J. Appl. Phys. 114, 163525 (2013).
[Crossref]

Jiang, C.

C. Du, C. Jiang, P. Zuo, X. Huang, X. Pu, Z. Zhao, Y. Zhou, L. Li, H. Chen, W. Hu, and Z. L. Wang, “Piezo-phototronic effect controlled dual-channel visible light communication (PVLC) using InGaN/GaN multiquantum well nanopillars,” Small. 11, 6071–6077 (2015).
[Crossref] [PubMed]

Jiang, D.

Jiang, D.-S.

X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
[Crossref]

Jianping, L.

J. Lingrong, L. Jianping, T. Aiqin, C. Yang, L. Zengcheng, Z. Liqun, Z. Shuming, L. Deyao, M. Ikeda, and Y. Hui, “Gan-based green laser diodes,” J. Semicond. 37, 111001 (2016).
[Crossref]

Kamins, T. I.

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined stark effect in germanium quantum-well structures on silicon,” Nature 437, 1334 (2005).
[Crossref] [PubMed]

Kappers, M. J.

F. C. Massabuau, P. Chen, M. Horton, S. Rhode, C. Ren, T. O’Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. Dunin-Borkowski, and R. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121, 013104 (2017).
[Crossref]

Kawakami, Y.

Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, and S. Nakamura, “Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm,” Appl. Phys. Lett. 70, 981–983 (1997).
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M. A. Khan and V. Adivarahan, “Fabrication technique for high frequency, high power group iii nitride electronic devices,” (2013). US Patent 8,476,125.

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S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Ridge-geometry InGaN multi-quantum-well-structure laser diodes,” Appl. Phys. Lett. 69, 1477–1479 (1996).
[Crossref]

Ko, T.

T. Ko, T. Lu, T. Wang, J. Chen, R. Gao, M. Lo, H. Kuo, S. Wang, and J. Shen, “Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 104, 093106 (2008).
[Crossref]

Kovács, A.

F. C. Massabuau, P. Chen, M. Horton, S. Rhode, C. Ren, T. O’Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. Dunin-Borkowski, and R. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121, 013104 (2017).
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T. Ko, T. Lu, T. Wang, J. Chen, R. Gao, M. Lo, H. Kuo, S. Wang, and J. Shen, “Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 104, 093106 (2008).
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Kuo, Y.-H.

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined stark effect in germanium quantum-well structures on silicon,” Nature 437, 1334 (2005).
[Crossref] [PubMed]

LeBoeuf, S.

M. Aumer, S. LeBoeuf, B. Moody, and S. Bedair, “Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells,” Appl. Phys. Lett. 79, 3803–3805 (2001).
[Crossref]

Lee, J.

P. G. Eliseev, M. Osinski, J. Lee, T. Sugahara, and S. Sakai, “Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1−xN grown on sapphire,” J. Electron. Mater. 29, 332–341 (2000).
[Crossref]

P. G. Eliseev, P. Perlin, J. Lee, and M. Osiński, “blue temperature-induced shift and band-tail emission in InGaN-based light sources,” Appl. Phys. Lett. 71, 569–571 (1997).
[Crossref]

Lee, Y. K.

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined stark effect in germanium quantum-well structures on silicon,” Nature 437, 1334 (2005).
[Crossref] [PubMed]

Li, C.

C. Li, Z. Ji, J. Li, M. Xu, H. Xiao, and X. Xu, “Electroluminescence properties of InGaN/GaN multiple quantum well-based leds with different indium contents and different well widths,” Sci. Reports 7, 15301 (2017).
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Li, G.

W. Wang, W. Yang, H. Wang, and G. Li, “Epitaxial growth of GaN films on unconventional oxide substrates,” J. Mater. Chem. C 2, 9342–9358 (2014).
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H. Yang, W. Wang, Z. Liu, and G. Li, “Homogeneous epitaxial growth of aln single-crystalline films on 2 inch-diameter si (111) substrates by pulsed laser deposition,” CrystEngComm. 15, 7171–7176 (2013).
[Crossref]

Li, J.

C. Li, Z. Ji, J. Li, M. Xu, H. Xiao, and X. Xu, “Electroluminescence properties of InGaN/GaN multiple quantum well-based leds with different indium contents and different well widths,” Sci. Reports 7, 15301 (2017).
[Crossref]

Li, L.

C. Du, C. Jiang, P. Zuo, X. Huang, X. Pu, Z. Zhao, Y. Zhou, L. Li, H. Chen, W. Hu, and Z. L. Wang, “Piezo-phototronic effect controlled dual-channel visible light communication (PVLC) using InGaN/GaN multiquantum well nanopillars,” Small. 11, 6071–6077 (2015).
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Li, M.

W. Liu, D. Zhao, D. Jiang, D. Shi, J. Zhu, Z. Liu, P. Chen, J. Yang, F. Liang, S. Liu, X. Yao, L. Zhang, W. Wang, M. Li, Y. Zhang, and G. Du, “Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells,” Opt. Express 26, 3427–3434 (2018).
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X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
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Q. Li, S. Xu, M. Xie, and S. Tong, “Origin of the S-shaped temperature dependence of luminescent peaks from semiconductors,” J. Physics: Condens. Matter 17, 4853–4858 (2005).

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X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
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Li, X.-J.

X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
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Liang, F.

W. Liu, D. Zhao, D. Jiang, D. Shi, J. Zhu, Z. Liu, P. Chen, J. Yang, F. Liang, S. Liu, X. Yao, L. Zhang, W. Wang, M. Li, Y. Zhang, and G. Du, “Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells,” Opt. Express 26, 3427–3434 (2018).
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X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
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Lingrong, J.

J. Lingrong, L. Jianping, T. Aiqin, C. Yang, L. Zengcheng, Z. Liqun, Z. Shuming, L. Deyao, M. Ikeda, and Y. Hui, “Gan-based green laser diodes,” J. Semicond. 37, 111001 (2016).
[Crossref]

Liqun, Z.

J. Lingrong, L. Jianping, T. Aiqin, C. Yang, L. Zengcheng, Z. Liqun, Z. Shuming, L. Deyao, M. Ikeda, and Y. Hui, “Gan-based green laser diodes,” J. Semicond. 37, 111001 (2016).
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Liu, J.-P.

X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
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Liu, S.

Liu, W.

W. Liu, D. Zhao, D. Jiang, D. Shi, J. Zhu, Z. Liu, P. Chen, J. Yang, F. Liang, S. Liu, X. Yao, L. Zhang, W. Wang, M. Li, Y. Zhang, and G. Du, “Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells,” Opt. Express 26, 3427–3434 (2018).
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X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
[Crossref]

Liu, Z.

W. Liu, D. Zhao, D. Jiang, D. Shi, J. Zhu, Z. Liu, P. Chen, J. Yang, F. Liang, S. Liu, X. Yao, L. Zhang, W. Wang, M. Li, Y. Zhang, and G. Du, “Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells,” Opt. Express 26, 3427–3434 (2018).
[Crossref] [PubMed]

D. Zhao, J. Yang, Z. Liu, P. Chen, J. Zhu, D. Jiang, Y. Shi, H. Wang, L. Duan, L. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38, 051001 (2017).
[Crossref]

H. Yang, W. Wang, Z. Liu, and G. Li, “Homogeneous epitaxial growth of aln single-crystalline films on 2 inch-diameter si (111) substrates by pulsed laser deposition,” CrystEngComm. 15, 7171–7176 (2013).
[Crossref]

Liu, Z.-S.

X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
[Crossref]

Lo, M.

T. Ko, T. Lu, T. Wang, J. Chen, R. Gao, M. Lo, H. Kuo, S. Wang, and J. Shen, “Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 104, 093106 (2008).
[Crossref]

Long, H.

X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
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N. Lu and I. Ferguson, “Iii-nitrides for energy production: photovoltaic and thermoelectric applications,” Semicond. Sci. Technol. 28, 074023 (2013).
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Lu, T.

T. Ko, T. Lu, T. Wang, J. Chen, R. Gao, M. Lo, H. Kuo, S. Wang, and J. Shen, “Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 104, 093106 (2008).
[Crossref]

Lv, Y.

F. Wang, Z. Ji, Q. Wang, X. Wang, S. Qu, X. Xu, Y. Lv, and Z. Feng, “Green and blue emissions in phase-separated InGaN quantum wells,” J. Appl. Phys. 114, 163525 (2013).
[Crossref]

Massabuau, F. C.

F. C. Massabuau, P. Chen, M. Horton, S. Rhode, C. Ren, T. O’Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. Dunin-Borkowski, and R. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121, 013104 (2017).
[Crossref]

Matsushita, T.

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Ridge-geometry InGaN multi-quantum-well-structure laser diodes,” Appl. Phys. Lett. 69, 1477–1479 (1996).
[Crossref]

Miller, D. A.

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined stark effect in germanium quantum-well structures on silicon,” Nature 437, 1334 (2005).
[Crossref] [PubMed]

Moody, B.

M. Aumer, S. LeBoeuf, B. Moody, and S. Bedair, “Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells,” Appl. Phys. Lett. 79, 3803–3805 (2001).
[Crossref]

Mukai, T.

S. Nakamura, T. Mukai, and M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett. 64, 1687–1689 (1994).
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Nagahama, S.

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Ridge-geometry InGaN multi-quantum-well-structure laser diodes,” Appl. Phys. Lett. 69, 1477–1479 (1996).
[Crossref]

Nakamura, S.

A. Sztein, J. Haberstroh, J. E. Bowers, S. P. DenBaars, and S. Nakamura, “Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN,” J. Appl. Phys. 113, 183707 (2013).
[Crossref]

Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, and S. Nakamura, “Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm,” Appl. Phys. Lett. 70, 981–983 (1997).
[Crossref]

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Ridge-geometry InGaN multi-quantum-well-structure laser diodes,” Appl. Phys. Lett. 69, 1477–1479 (1996).
[Crossref]

S. Nakamura, T. Mukai, and M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett. 64, 1687–1689 (1994).
[Crossref]

Narukawa, Y.

Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, and S. Nakamura, “Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm,” Appl. Phys. Lett. 70, 981–983 (1997).
[Crossref]

O’Hanlon, T.

F. C. Massabuau, P. Chen, M. Horton, S. Rhode, C. Ren, T. O’Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. Dunin-Borkowski, and R. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121, 013104 (2017).
[Crossref]

Off, J.

H. Schömig, S. Halm, A. Forchel, G. Bacher, J. Off, and F. Scholz, “Probing individual localization centers in an InGaN/GaN quantum well,” Phys. Rev. Lett. 92, 106802 (2004).
[Crossref] [PubMed]

Oliver, R.

F. C. Massabuau, P. Chen, M. Horton, S. Rhode, C. Ren, T. O’Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. Dunin-Borkowski, and R. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121, 013104 (2017).
[Crossref]

Osinski, M.

P. G. Eliseev, M. Osinski, J. Lee, T. Sugahara, and S. Sakai, “Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1−xN grown on sapphire,” J. Electron. Mater. 29, 332–341 (2000).
[Crossref]

P. G. Eliseev, P. Perlin, J. Lee, and M. Osiński, “blue temperature-induced shift and band-tail emission in InGaN-based light sources,” Appl. Phys. Lett. 71, 569–571 (1997).
[Crossref]

Perlin, P.

P. G. Eliseev, P. Perlin, J. Lee, and M. Osiński, “blue temperature-induced shift and band-tail emission in InGaN-based light sources,” Appl. Phys. Lett. 71, 569–571 (1997).
[Crossref]

Pu, X.

C. Du, C. Jiang, P. Zuo, X. Huang, X. Pu, Z. Zhao, Y. Zhou, L. Li, H. Chen, W. Hu, and Z. L. Wang, “Piezo-phototronic effect controlled dual-channel visible light communication (PVLC) using InGaN/GaN multiquantum well nanopillars,” Small. 11, 6071–6077 (2015).
[Crossref] [PubMed]

Qu, S.

F. Wang, Z. Ji, Q. Wang, X. Wang, S. Qu, X. Xu, Y. Lv, and Z. Feng, “Green and blue emissions in phase-separated InGaN quantum wells,” J. Appl. Phys. 114, 163525 (2013).
[Crossref]

Ren, C.

F. C. Massabuau, P. Chen, M. Horton, S. Rhode, C. Ren, T. O’Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. Dunin-Borkowski, and R. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121, 013104 (2017).
[Crossref]

Ren, S.

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined stark effect in germanium quantum-well structures on silicon,” Nature 437, 1334 (2005).
[Crossref] [PubMed]

Rhode, S.

F. C. Massabuau, P. Chen, M. Horton, S. Rhode, C. Ren, T. O’Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. Dunin-Borkowski, and R. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121, 013104 (2017).
[Crossref]

Roth, J. E.

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined stark effect in germanium quantum-well structures on silicon,” Nature 437, 1334 (2005).
[Crossref] [PubMed]

Sakai, S.

P. G. Eliseev, M. Osinski, J. Lee, T. Sugahara, and S. Sakai, “Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1−xN grown on sapphire,” J. Electron. Mater. 29, 332–341 (2000).
[Crossref]

Scholz, F.

H. Schömig, S. Halm, A. Forchel, G. Bacher, J. Off, and F. Scholz, “Probing individual localization centers in an InGaN/GaN quantum well,” Phys. Rev. Lett. 92, 106802 (2004).
[Crossref] [PubMed]

Schömig, H.

H. Schömig, S. Halm, A. Forchel, G. Bacher, J. Off, and F. Scholz, “Probing individual localization centers in an InGaN/GaN quantum well,” Phys. Rev. Lett. 92, 106802 (2004).
[Crossref] [PubMed]

Senoh, M.

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Ridge-geometry InGaN multi-quantum-well-structure laser diodes,” Appl. Phys. Lett. 69, 1477–1479 (1996).
[Crossref]

S. Nakamura, T. Mukai, and M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett. 64, 1687–1689 (1994).
[Crossref]

Shen, J.

T. Ko, T. Lu, T. Wang, J. Chen, R. Gao, M. Lo, H. Kuo, S. Wang, and J. Shen, “Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 104, 093106 (2008).
[Crossref]

Shi, D.

Shi, Y.

D. Zhao, J. Yang, Z. Liu, P. Chen, J. Zhu, D. Jiang, Y. Shi, H. Wang, L. Duan, L. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38, 051001 (2017).
[Crossref]

Shuming, Z.

J. Lingrong, L. Jianping, T. Aiqin, C. Yang, L. Zengcheng, Z. Liqun, Z. Shuming, L. Deyao, M. Ikeda, and Y. Hui, “Gan-based green laser diodes,” J. Semicond. 37, 111001 (2016).
[Crossref]

Sriram, S.

R. Chandiramouli and S. Sriram, “First-principles investigation on band structure and electronic transport property of gallium nitride nanoribbon,” Nano. 9, 1450020 (2014).
[Crossref]

Sugahara, T.

P. G. Eliseev, M. Osinski, J. Lee, T. Sugahara, and S. Sakai, “Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1−xN grown on sapphire,” J. Electron. Mater. 29, 332–341 (2000).
[Crossref]

Sugimoto, Y.

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Ridge-geometry InGaN multi-quantum-well-structure laser diodes,” Appl. Phys. Lett. 69, 1477–1479 (1996).
[Crossref]

Sztein, A.

A. Sztein, J. Haberstroh, J. E. Bowers, S. P. DenBaars, and S. Nakamura, “Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN,” J. Appl. Phys. 113, 183707 (2013).
[Crossref]

Tong, S.

Q. Li, S. Xu, M. Xie, and S. Tong, “A model for steady-state luminescence of localized-state ensemble,” EPL Europhys. Lett. 71, 994 (2005).
[Crossref]

Q. Li, S. Xu, M. Xie, and S. Tong, “Origin of the S-shaped temperature dependence of luminescent peaks from semiconductors,” J. Physics: Condens. Matter 17, 4853–4858 (2005).

Varshni, Y. P.

Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” physica. 34, 149–154 (1967).
[Crossref]

Vico Triviño, N.

N. Vico Triviño, U. Dharanipathy, J.-F. Carlin, Z. Diao, R. Houdre, and N. Grandjean, “Integrated photonics on silicon with wide bandgap GaN semiconductor,” Appl. Phys. Lett. 102, 081120 (2013).
[Crossref]

Wang, F.

F. Wang, Z. Ji, Q. Wang, X. Wang, S. Qu, X. Xu, Y. Lv, and Z. Feng, “Green and blue emissions in phase-separated InGaN quantum wells,” J. Appl. Phys. 114, 163525 (2013).
[Crossref]

Wang, H.

D. Zhao, J. Yang, Z. Liu, P. Chen, J. Zhu, D. Jiang, Y. Shi, H. Wang, L. Duan, L. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38, 051001 (2017).
[Crossref]

W. Wang, W. Yang, H. Wang, and G. Li, “Epitaxial growth of GaN films on unconventional oxide substrates,” J. Mater. Chem. C 2, 9342–9358 (2014).
[Crossref]

Wang, Q.

F. Wang, Z. Ji, Q. Wang, X. Wang, S. Qu, X. Xu, Y. Lv, and Z. Feng, “Green and blue emissions in phase-separated InGaN quantum wells,” J. Appl. Phys. 114, 163525 (2013).
[Crossref]

Wang, S.

T. Ko, T. Lu, T. Wang, J. Chen, R. Gao, M. Lo, H. Kuo, S. Wang, and J. Shen, “Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 104, 093106 (2008).
[Crossref]

Wang, T.

T. Ko, T. Lu, T. Wang, J. Chen, R. Gao, M. Lo, H. Kuo, S. Wang, and J. Shen, “Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 104, 093106 (2008).
[Crossref]

Wang, W.

W. Liu, D. Zhao, D. Jiang, D. Shi, J. Zhu, Z. Liu, P. Chen, J. Yang, F. Liang, S. Liu, X. Yao, L. Zhang, W. Wang, M. Li, Y. Zhang, and G. Du, “Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells,” Opt. Express 26, 3427–3434 (2018).
[Crossref] [PubMed]

W. Wang, W. Yang, H. Wang, and G. Li, “Epitaxial growth of GaN films on unconventional oxide substrates,” J. Mater. Chem. C 2, 9342–9358 (2014).
[Crossref]

H. Yang, W. Wang, Z. Liu, and G. Li, “Homogeneous epitaxial growth of aln single-crystalline films on 2 inch-diameter si (111) substrates by pulsed laser deposition,” CrystEngComm. 15, 7171–7176 (2013).
[Crossref]

Wang, X.

F. Wang, Z. Ji, Q. Wang, X. Wang, S. Qu, X. Xu, Y. Lv, and Z. Feng, “Green and blue emissions in phase-separated InGaN quantum wells,” J. Appl. Phys. 114, 163525 (2013).
[Crossref]

Wang, Z. L.

C. Du, C. Jiang, P. Zuo, X. Huang, X. Pu, Z. Zhao, Y. Zhou, L. Li, H. Chen, W. Hu, and Z. L. Wang, “Piezo-phototronic effect controlled dual-channel visible light communication (PVLC) using InGaN/GaN multiquantum well nanopillars,” Small. 11, 6071–6077 (2015).
[Crossref] [PubMed]

Xiao, H.

C. Li, Z. Ji, J. Li, M. Xu, H. Xiao, and X. Xu, “Electroluminescence properties of InGaN/GaN multiple quantum well-based leds with different indium contents and different well widths,” Sci. Reports 7, 15301 (2017).
[Crossref]

Xie, M.

Q. Li, S. Xu, M. Xie, and S. Tong, “Origin of the S-shaped temperature dependence of luminescent peaks from semiconductors,” J. Physics: Condens. Matter 17, 4853–4858 (2005).

Q. Li, S. Xu, M. Xie, and S. Tong, “A model for steady-state luminescence of localized-state ensemble,” EPL Europhys. Lett. 71, 994 (2005).
[Crossref]

Xu, M.

C. Li, Z. Ji, J. Li, M. Xu, H. Xiao, and X. Xu, “Electroluminescence properties of InGaN/GaN multiple quantum well-based leds with different indium contents and different well widths,” Sci. Reports 7, 15301 (2017).
[Crossref]

Xu, S.

Q. Li, S. Xu, M. Xie, and S. Tong, “A model for steady-state luminescence of localized-state ensemble,” EPL Europhys. Lett. 71, 994 (2005).
[Crossref]

Q. Li, S. Xu, M. Xie, and S. Tong, “Origin of the S-shaped temperature dependence of luminescent peaks from semiconductors,” J. Physics: Condens. Matter 17, 4853–4858 (2005).

Xu, X.

C. Li, Z. Ji, J. Li, M. Xu, H. Xiao, and X. Xu, “Electroluminescence properties of InGaN/GaN multiple quantum well-based leds with different indium contents and different well widths,” Sci. Reports 7, 15301 (2017).
[Crossref]

F. Wang, Z. Ji, Q. Wang, X. Wang, S. Qu, X. Xu, Y. Lv, and Z. Feng, “Green and blue emissions in phase-separated InGaN quantum wells,” J. Appl. Phys. 114, 163525 (2013).
[Crossref]

Yamada, T.

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Ridge-geometry InGaN multi-quantum-well-structure laser diodes,” Appl. Phys. Lett. 69, 1477–1479 (1996).
[Crossref]

Yang, C.

J. Lingrong, L. Jianping, T. Aiqin, C. Yang, L. Zengcheng, Z. Liqun, Z. Shuming, L. Deyao, M. Ikeda, and Y. Hui, “Gan-based green laser diodes,” J. Semicond. 37, 111001 (2016).
[Crossref]

Yang, H.

X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
[Crossref]

D. Zhao, J. Yang, Z. Liu, P. Chen, J. Zhu, D. Jiang, Y. Shi, H. Wang, L. Duan, L. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38, 051001 (2017).
[Crossref]

H. Yang, W. Wang, Z. Liu, and G. Li, “Homogeneous epitaxial growth of aln single-crystalline films on 2 inch-diameter si (111) substrates by pulsed laser deposition,” CrystEngComm. 15, 7171–7176 (2013).
[Crossref]

Yang, J.

W. Liu, D. Zhao, D. Jiang, D. Shi, J. Zhu, Z. Liu, P. Chen, J. Yang, F. Liang, S. Liu, X. Yao, L. Zhang, W. Wang, M. Li, Y. Zhang, and G. Du, “Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells,” Opt. Express 26, 3427–3434 (2018).
[Crossref] [PubMed]

D. Zhao, J. Yang, Z. Liu, P. Chen, J. Zhu, D. Jiang, Y. Shi, H. Wang, L. Duan, L. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38, 051001 (2017).
[Crossref]

X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
[Crossref]

Yang, W.

W. Wang, W. Yang, H. Wang, and G. Li, “Epitaxial growth of GaN films on unconventional oxide substrates,” J. Mater. Chem. C 2, 9342–9358 (2014).
[Crossref]

Yao, X.

Zengcheng, L.

J. Lingrong, L. Jianping, T. Aiqin, C. Yang, L. Zengcheng, Z. Liqun, Z. Shuming, L. Deyao, M. Ikeda, and Y. Hui, “Gan-based green laser diodes,” J. Semicond. 37, 111001 (2016).
[Crossref]

Zhang, L.

Zhang, L.-Q.

X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
[Crossref]

Zhang, Y.

Zhang, Y.-T.

X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
[Crossref]

Zhao, D.

Zhao, D.-G.

X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
[Crossref]

Zhao, Z.

C. Du, C. Jiang, P. Zuo, X. Huang, X. Pu, Z. Zhao, Y. Zhou, L. Li, H. Chen, W. Hu, and Z. L. Wang, “Piezo-phototronic effect controlled dual-channel visible light communication (PVLC) using InGaN/GaN multiquantum well nanopillars,” Small. 11, 6071–6077 (2015).
[Crossref] [PubMed]

Zhou, Y.

C. Du, C. Jiang, P. Zuo, X. Huang, X. Pu, Z. Zhao, Y. Zhou, L. Li, H. Chen, W. Hu, and Z. L. Wang, “Piezo-phototronic effect controlled dual-channel visible light communication (PVLC) using InGaN/GaN multiquantum well nanopillars,” Small. 11, 6071–6077 (2015).
[Crossref] [PubMed]

Zhu, J.

Zhu, J.-J.

X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
[Crossref]

Zuo, P.

C. Du, C. Jiang, P. Zuo, X. Huang, X. Pu, Z. Zhao, Y. Zhou, L. Li, H. Chen, W. Hu, and Z. L. Wang, “Piezo-phototronic effect controlled dual-channel visible light communication (PVLC) using InGaN/GaN multiquantum well nanopillars,” Small. 11, 6071–6077 (2015).
[Crossref] [PubMed]

Appl. Phys. Lett. (6)

S. Nakamura, T. Mukai, and M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett. 64, 1687–1689 (1994).
[Crossref]

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Ridge-geometry InGaN multi-quantum-well-structure laser diodes,” Appl. Phys. Lett. 69, 1477–1479 (1996).
[Crossref]

N. Vico Triviño, U. Dharanipathy, J.-F. Carlin, Z. Diao, R. Houdre, and N. Grandjean, “Integrated photonics on silicon with wide bandgap GaN semiconductor,” Appl. Phys. Lett. 102, 081120 (2013).
[Crossref]

M. Aumer, S. LeBoeuf, B. Moody, and S. Bedair, “Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells,” Appl. Phys. Lett. 79, 3803–3805 (2001).
[Crossref]

Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, and S. Nakamura, “Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm,” Appl. Phys. Lett. 70, 981–983 (1997).
[Crossref]

P. G. Eliseev, P. Perlin, J. Lee, and M. Osiński, “blue temperature-induced shift and band-tail emission in InGaN-based light sources,” Appl. Phys. Lett. 71, 569–571 (1997).
[Crossref]

Chin. Phys. B (1)

X. Li, D.-G. Zhao, D.-S. Jiang, J. Yang, P. Chen, Z.-S. Liu, J.-J. Zhu, W. Liu, X.-G. He, X.-J. Li, F. Liang, J.-P. Liu, L.-Q. Zhang, H. Yang, Y.-T. Zhang, G.-T. Du, H. Long, and M. Li, “Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths,” Chin. Phys. B 26, 017805 (2017).
[Crossref]

CrystEngComm. (1)

H. Yang, W. Wang, Z. Liu, and G. Li, “Homogeneous epitaxial growth of aln single-crystalline films on 2 inch-diameter si (111) substrates by pulsed laser deposition,” CrystEngComm. 15, 7171–7176 (2013).
[Crossref]

EPL Europhys. Lett. (1)

Q. Li, S. Xu, M. Xie, and S. Tong, “A model for steady-state luminescence of localized-state ensemble,” EPL Europhys. Lett. 71, 994 (2005).
[Crossref]

J. Appl. Phys. (4)

F. Wang, Z. Ji, Q. Wang, X. Wang, S. Qu, X. Xu, Y. Lv, and Z. Feng, “Green and blue emissions in phase-separated InGaN quantum wells,” J. Appl. Phys. 114, 163525 (2013).
[Crossref]

F. C. Massabuau, P. Chen, M. Horton, S. Rhode, C. Ren, T. O’Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. Dunin-Borkowski, and R. Oliver, “Carrier localization in the vicinity of dislocations in InGaN,” J. Appl. Phys. 121, 013104 (2017).
[Crossref]

T. Ko, T. Lu, T. Wang, J. Chen, R. Gao, M. Lo, H. Kuo, S. Wang, and J. Shen, “Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition,” J. Appl. Phys. 104, 093106 (2008).
[Crossref]

A. Sztein, J. Haberstroh, J. E. Bowers, S. P. DenBaars, and S. Nakamura, “Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN,” J. Appl. Phys. 113, 183707 (2013).
[Crossref]

J. Electron. Mater. (1)

P. G. Eliseev, M. Osinski, J. Lee, T. Sugahara, and S. Sakai, “Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1−xN grown on sapphire,” J. Electron. Mater. 29, 332–341 (2000).
[Crossref]

J. Mater. Chem. C (1)

W. Wang, W. Yang, H. Wang, and G. Li, “Epitaxial growth of GaN films on unconventional oxide substrates,” J. Mater. Chem. C 2, 9342–9358 (2014).
[Crossref]

J. Physics: Condens. Matter (1)

Q. Li, S. Xu, M. Xie, and S. Tong, “Origin of the S-shaped temperature dependence of luminescent peaks from semiconductors,” J. Physics: Condens. Matter 17, 4853–4858 (2005).

J. Semicond. (2)

J. Lingrong, L. Jianping, T. Aiqin, C. Yang, L. Zengcheng, Z. Liqun, Z. Shuming, L. Deyao, M. Ikeda, and Y. Hui, “Gan-based green laser diodes,” J. Semicond. 37, 111001 (2016).
[Crossref]

D. Zhao, J. Yang, Z. Liu, P. Chen, J. Zhu, D. Jiang, Y. Shi, H. Wang, L. Duan, L. Zhang, and H. Yang, “Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,” J. Semicond. 38, 051001 (2017).
[Crossref]

Nano. (1)

R. Chandiramouli and S. Sriram, “First-principles investigation on band structure and electronic transport property of gallium nitride nanoribbon,” Nano. 9, 1450020 (2014).
[Crossref]

Nature (1)

Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. Miller, and J. S. Harris, “Strong quantum-confined stark effect in germanium quantum-well structures on silicon,” Nature 437, 1334 (2005).
[Crossref] [PubMed]

Opt. Express (1)

Phys. Rev. Lett. (1)

H. Schömig, S. Halm, A. Forchel, G. Bacher, J. Off, and F. Scholz, “Probing individual localization centers in an InGaN/GaN quantum well,” Phys. Rev. Lett. 92, 106802 (2004).
[Crossref] [PubMed]

physica. (1)

Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” physica. 34, 149–154 (1967).
[Crossref]

Sci. Reports (1)

C. Li, Z. Ji, J. Li, M. Xu, H. Xiao, and X. Xu, “Electroluminescence properties of InGaN/GaN multiple quantum well-based leds with different indium contents and different well widths,” Sci. Reports 7, 15301 (2017).
[Crossref]

Semicond. Sci. Technol. (2)

N. Lu and I. Ferguson, “Iii-nitrides for energy production: photovoltaic and thermoelectric applications,” Semicond. Sci. Technol. 28, 074023 (2013).
[Crossref]

B. J. Baliga, “Gallium nitride devices for power electronic applications,” Semicond. Sci. Technol. 28, 074011 (2013).
[Crossref]

Small. (1)

C. Du, C. Jiang, P. Zuo, X. Huang, X. Pu, Z. Zhao, Y. Zhou, L. Li, H. Chen, W. Hu, and Z. L. Wang, “Piezo-phototronic effect controlled dual-channel visible light communication (PVLC) using InGaN/GaN multiquantum well nanopillars,” Small. 11, 6071–6077 (2015).
[Crossref] [PubMed]

Other (1)

M. A. Khan and V. Adivarahan, “Fabrication technique for high frequency, high power group iii nitride electronic devices,” (2013). US Patent 8,476,125.

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Figures (8)

Fig. 1
Fig. 1 Structure of InGaN/GaN MQW.
Fig. 2
Fig. 2 EL peak position change with varying well thickness under 1 mA current.
Fig. 3
Fig. 3 Reciprocal space mapping image shows no detectable relaxation of QWs.
Fig. 4
Fig. 4 EL peak position change with different injection current (the lines in the figure are simply a guide to the eye).
Fig. 5
Fig. 5 The blue-shift of EL peak energy measured from peak energy shown on the low current side of Fig. 4 differs for samples with different well widths.
Fig. 6
Fig. 6 Schematic illustration of QWs with different width under a change in the current injection.
Fig. 7
Fig. 7 Experimental data of temperature-dependent PL peak energy for three Samples: 2.5 nm (a), 4.4 nm (b) and 5.7 nm (c), and fitting curves (blue solid lines) according to Eq. (1). The values of σ for three samples are 11.47 meV, 18.37 meV, and 45.63 meV, respectively.
Fig. 8
Fig. 8 Comparison of TDPL peak trends between high and low temperature grown samples.

Tables (1)

Tables Icon

Table 1 Simulated QW bottom slope change

Equations (1)

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E 0 ( T ) = E 0 ( 0 ) α T 2 T + β σ 2 k B T

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