Abstract

In this study, a Ti–diamond–Ti structured ultraviolet photodetector was fabricated on a homoepitaxial diamond layer with an oxygen-terminated surface. The properties of the Ti/diamond schottky contact were measured using X-ray photoelectron spectroscopy, and the barrier height was found to be 1.15 eV. At a bias of 3 V, the responsivity at 210 nm was only 4.29 mA/W, while at 12 V, the responsivity increased rapidly to 51 mA/W. The increase can be ascribed to the photocurrent gain. With the further increase in voltage, an avalanche effect was produced, and the responsivity could reach 1.18 A/W at 50 V. Moreover, the transient response behavior of the photodetector exhibited a good repeatability and response speed.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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References

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  1. M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
    [Crossref]
  2. S. Salvatori, M. C. Rossi, F. Scotti, G. Conte, F. Galluzzi, and V. Ralchenko, “High-temperature performances of diamond-based UV-photodetectors,” Diamond Related Materials 9(3-6), 982–986 (2000).
    [Crossref]
  3. R. D. McKeag and R. B. Jackman, “Diamond UV photodetectors: sensitivity and speed for visible blind applications,” Diamond Related Materials 7(2-5), 513–518 (1998).
    [Crossref]
  4. E. Pace, F. Galluzzi, M. C. Rossi, S. Salvatori, M. Marinelli, and P. Paroli, “Electra-optical properties of diamond thin films as UV photodetectors,” Nucl. Instrum. Methods Phys. Res. A 387(1-2), 255–258 (1997).
    [Crossref]
  5. S. Salvatori, E. Pace, M. C. Rossi, and F. Galluzzi, “Photoelectrical characteristics of diamond UV detectors: dependence on device design and film quality,” Diamond Related Materials 6(2-4), 361–366 (1997).
    [Crossref]
  6. Z. Liu, F. Li, W. Wang, J. Zhang, F. Lin, and H.-X. Wang, “Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector,” MRS Adv. 1(16), 1099–1104 (2016).
    [Crossref]
  7. T.-F. Zhu, Z. Liu, Z. Liu, F. Li, M. Zhang, W. Wang, F. Wen, J. Wang, R. Bu, J. Zhang, and H. X. Wang, “Fabrication of monolithic diamond photodetector with microlenses,” Opt. Express 25(25), 31586–31594 (2017).
    [Crossref] [PubMed]
  8. Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Fabrication of three dimensional diamond ultraviolet photodetector through down-top method,” Appl. Phys. Lett. 109(15), 153507 (2016).
    [Crossref]
  9. A. BenMoussa, U. Schühle, K. Haenen, M. Nesládek, S. Koizumi, and J.-F. Hochedez, “PIN diamond detector development for LYRA,” Phys. Status Solidi 201(11), 2536–2541 (2004).
    [Crossref]
  10. M. D. Whitfield, S. S. M. Chan, and R. B. Jackman, “Thin film diamond photodiode for ultraviolet light detection,” Appl. Phys. Lett. 68(3), 290–292 (1996).
    [Crossref]
  11. H. J. Looi, M. D. Whitfield, and R. B. Jackmana, “Metal–semiconductor–metal photodiodes fabricated from thin-film diamond,” Appl. Phys. Lett. 74, 3332 (1999).
    [Crossref]
  12. M. Liao and Y. Koide, “High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film,” Appl. Phys. Lett. 89(11), 113509 (2006).
    [Crossref]
  13. T. Teraji, S. Yoshizaki, H. Wada, M. Hamada, and T. Ito, “Highly sensitive UV photodetectors fabricated using high-quality single-crystalline CVD diamond films,” Diamond Related Materials 13(4-8), 858–862 (2004).
    [Crossref]
  14. M. Liao, X. Wang, T. Teraji, S. Koizumi, and Y. Koide, “Light intensity dependence of photocurrent gain in single-crystal diamond detectors,” Phys. Rev. B 81(3), 033304 (2010).
    [Crossref]
  15. M. W. Doherty, N. B. Manson, P. Delaney, F. Jelezko, J. Wrachtrup, and L. C. L. Hollenberg, “The nitrogen-vacancy colour centre in diamond,” Phys. Rep. 528(1), 1–45 (2013).
    [Crossref]
  16. S. Kono, T. Teraji, H. Kodama, K. Ichikawa, S. Ohnishi, and A. Sawabe, “Direct determination of the barrier height of Ti-based ohmic contact on p-type diamond (001),” Diamond Related Materials 60, 117–122 (2015).
    [Crossref]
  17. F. Maier, J. Ristein, and L. Ley, “Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces,” Phys. Rev. B 64(16), 165411 (2001).
    [Crossref]
  18. Y. Chen, M. Ogura, S. Yamasaki, and H. Okushi, “Ohmic contacts on p-type homoepitaxial diamond and their thermal stability,” Semicond. Sci. Technol. 20(8), 860–863 (2005).
    [Crossref]
  19. T. Sugeta and T. Urisu, “High-Gain Metal-Semiconductor-Metal Photodetectors for High-speed Optoelectronic Circuits,” IEEE Trans. Electron Dev. 26(11), 1855–1856 (1979).
    [Crossref]
  20. B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-Blind Avalanche Photodetector Based On Single ZnO-Ga2O3 Core-Shell Microwire,” Nano Lett. 15(6), 3988–3993 (2015).
    [Crossref] [PubMed]

2017 (1)

2016 (2)

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Fabrication of three dimensional diamond ultraviolet photodetector through down-top method,” Appl. Phys. Lett. 109(15), 153507 (2016).
[Crossref]

Z. Liu, F. Li, W. Wang, J. Zhang, F. Lin, and H.-X. Wang, “Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector,” MRS Adv. 1(16), 1099–1104 (2016).
[Crossref]

2015 (2)

S. Kono, T. Teraji, H. Kodama, K. Ichikawa, S. Ohnishi, and A. Sawabe, “Direct determination of the barrier height of Ti-based ohmic contact on p-type diamond (001),” Diamond Related Materials 60, 117–122 (2015).
[Crossref]

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-Blind Avalanche Photodetector Based On Single ZnO-Ga2O3 Core-Shell Microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

2013 (1)

M. W. Doherty, N. B. Manson, P. Delaney, F. Jelezko, J. Wrachtrup, and L. C. L. Hollenberg, “The nitrogen-vacancy colour centre in diamond,” Phys. Rep. 528(1), 1–45 (2013).
[Crossref]

2012 (1)

M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
[Crossref]

2010 (1)

M. Liao, X. Wang, T. Teraji, S. Koizumi, and Y. Koide, “Light intensity dependence of photocurrent gain in single-crystal diamond detectors,” Phys. Rev. B 81(3), 033304 (2010).
[Crossref]

2006 (1)

M. Liao and Y. Koide, “High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film,” Appl. Phys. Lett. 89(11), 113509 (2006).
[Crossref]

2005 (1)

Y. Chen, M. Ogura, S. Yamasaki, and H. Okushi, “Ohmic contacts on p-type homoepitaxial diamond and their thermal stability,” Semicond. Sci. Technol. 20(8), 860–863 (2005).
[Crossref]

2004 (2)

T. Teraji, S. Yoshizaki, H. Wada, M. Hamada, and T. Ito, “Highly sensitive UV photodetectors fabricated using high-quality single-crystalline CVD diamond films,” Diamond Related Materials 13(4-8), 858–862 (2004).
[Crossref]

A. BenMoussa, U. Schühle, K. Haenen, M. Nesládek, S. Koizumi, and J.-F. Hochedez, “PIN diamond detector development for LYRA,” Phys. Status Solidi 201(11), 2536–2541 (2004).
[Crossref]

2001 (1)

F. Maier, J. Ristein, and L. Ley, “Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces,” Phys. Rev. B 64(16), 165411 (2001).
[Crossref]

2000 (1)

S. Salvatori, M. C. Rossi, F. Scotti, G. Conte, F. Galluzzi, and V. Ralchenko, “High-temperature performances of diamond-based UV-photodetectors,” Diamond Related Materials 9(3-6), 982–986 (2000).
[Crossref]

1999 (1)

H. J. Looi, M. D. Whitfield, and R. B. Jackmana, “Metal–semiconductor–metal photodiodes fabricated from thin-film diamond,” Appl. Phys. Lett. 74, 3332 (1999).
[Crossref]

1998 (1)

R. D. McKeag and R. B. Jackman, “Diamond UV photodetectors: sensitivity and speed for visible blind applications,” Diamond Related Materials 7(2-5), 513–518 (1998).
[Crossref]

1997 (2)

E. Pace, F. Galluzzi, M. C. Rossi, S. Salvatori, M. Marinelli, and P. Paroli, “Electra-optical properties of diamond thin films as UV photodetectors,” Nucl. Instrum. Methods Phys. Res. A 387(1-2), 255–258 (1997).
[Crossref]

S. Salvatori, E. Pace, M. C. Rossi, and F. Galluzzi, “Photoelectrical characteristics of diamond UV detectors: dependence on device design and film quality,” Diamond Related Materials 6(2-4), 361–366 (1997).
[Crossref]

1996 (1)

M. D. Whitfield, S. S. M. Chan, and R. B. Jackman, “Thin film diamond photodiode for ultraviolet light detection,” Appl. Phys. Lett. 68(3), 290–292 (1996).
[Crossref]

1979 (1)

T. Sugeta and T. Urisu, “High-Gain Metal-Semiconductor-Metal Photodetectors for High-speed Optoelectronic Circuits,” IEEE Trans. Electron Dev. 26(11), 1855–1856 (1979).
[Crossref]

Alvarez, J.

M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
[Crossref]

Ao, J.-P.

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Fabrication of three dimensional diamond ultraviolet photodetector through down-top method,” Appl. Phys. Lett. 109(15), 153507 (2016).
[Crossref]

BenMoussa, A.

A. BenMoussa, U. Schühle, K. Haenen, M. Nesládek, S. Koizumi, and J.-F. Hochedez, “PIN diamond detector development for LYRA,” Phys. Status Solidi 201(11), 2536–2541 (2004).
[Crossref]

Bu, R.

Chan, S. S. M.

M. D. Whitfield, S. S. M. Chan, and R. B. Jackman, “Thin film diamond photodiode for ultraviolet light detection,” Appl. Phys. Lett. 68(3), 290–292 (1996).
[Crossref]

Chen, H.

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-Blind Avalanche Photodetector Based On Single ZnO-Ga2O3 Core-Shell Microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

Chen, Y.

Y. Chen, M. Ogura, S. Yamasaki, and H. Okushi, “Ohmic contacts on p-type homoepitaxial diamond and their thermal stability,” Semicond. Sci. Technol. 20(8), 860–863 (2005).
[Crossref]

Conte, G.

S. Salvatori, M. C. Rossi, F. Scotti, G. Conte, F. Galluzzi, and V. Ralchenko, “High-temperature performances of diamond-based UV-photodetectors,” Diamond Related Materials 9(3-6), 982–986 (2000).
[Crossref]

Delaney, P.

M. W. Doherty, N. B. Manson, P. Delaney, F. Jelezko, J. Wrachtrup, and L. C. L. Hollenberg, “The nitrogen-vacancy colour centre in diamond,” Phys. Rep. 528(1), 1–45 (2013).
[Crossref]

Doherty, M. W.

M. W. Doherty, N. B. Manson, P. Delaney, F. Jelezko, J. Wrachtrup, and L. C. L. Hollenberg, “The nitrogen-vacancy colour centre in diamond,” Phys. Rep. 528(1), 1–45 (2013).
[Crossref]

Fang, X.

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-Blind Avalanche Photodetector Based On Single ZnO-Ga2O3 Core-Shell Microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

Galluzzi, F.

S. Salvatori, M. C. Rossi, F. Scotti, G. Conte, F. Galluzzi, and V. Ralchenko, “High-temperature performances of diamond-based UV-photodetectors,” Diamond Related Materials 9(3-6), 982–986 (2000).
[Crossref]

E. Pace, F. Galluzzi, M. C. Rossi, S. Salvatori, M. Marinelli, and P. Paroli, “Electra-optical properties of diamond thin films as UV photodetectors,” Nucl. Instrum. Methods Phys. Res. A 387(1-2), 255–258 (1997).
[Crossref]

S. Salvatori, E. Pace, M. C. Rossi, and F. Galluzzi, “Photoelectrical characteristics of diamond UV detectors: dependence on device design and film quality,” Diamond Related Materials 6(2-4), 361–366 (1997).
[Crossref]

Haenen, K.

A. BenMoussa, U. Schühle, K. Haenen, M. Nesládek, S. Koizumi, and J.-F. Hochedez, “PIN diamond detector development for LYRA,” Phys. Status Solidi 201(11), 2536–2541 (2004).
[Crossref]

Hamada, M.

T. Teraji, S. Yoshizaki, H. Wada, M. Hamada, and T. Ito, “Highly sensitive UV photodetectors fabricated using high-quality single-crystalline CVD diamond films,” Diamond Related Materials 13(4-8), 858–862 (2004).
[Crossref]

Hochedez, J.-F.

A. BenMoussa, U. Schühle, K. Haenen, M. Nesládek, S. Koizumi, and J.-F. Hochedez, “PIN diamond detector development for LYRA,” Phys. Status Solidi 201(11), 2536–2541 (2004).
[Crossref]

Hollenberg, L. C. L.

M. W. Doherty, N. B. Manson, P. Delaney, F. Jelezko, J. Wrachtrup, and L. C. L. Hollenberg, “The nitrogen-vacancy colour centre in diamond,” Phys. Rep. 528(1), 1–45 (2013).
[Crossref]

Ichikawa, K.

S. Kono, T. Teraji, H. Kodama, K. Ichikawa, S. Ohnishi, and A. Sawabe, “Direct determination of the barrier height of Ti-based ohmic contact on p-type diamond (001),” Diamond Related Materials 60, 117–122 (2015).
[Crossref]

Imura, M.

M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
[Crossref]

Ito, T.

T. Teraji, S. Yoshizaki, H. Wada, M. Hamada, and T. Ito, “Highly sensitive UV photodetectors fabricated using high-quality single-crystalline CVD diamond films,” Diamond Related Materials 13(4-8), 858–862 (2004).
[Crossref]

Jackman, R. B.

R. D. McKeag and R. B. Jackman, “Diamond UV photodetectors: sensitivity and speed for visible blind applications,” Diamond Related Materials 7(2-5), 513–518 (1998).
[Crossref]

M. D. Whitfield, S. S. M. Chan, and R. B. Jackman, “Thin film diamond photodiode for ultraviolet light detection,” Appl. Phys. Lett. 68(3), 290–292 (1996).
[Crossref]

Jackmana, R. B.

H. J. Looi, M. D. Whitfield, and R. B. Jackmana, “Metal–semiconductor–metal photodiodes fabricated from thin-film diamond,” Appl. Phys. Lett. 74, 3332 (1999).
[Crossref]

Jelezko, F.

M. W. Doherty, N. B. Manson, P. Delaney, F. Jelezko, J. Wrachtrup, and L. C. L. Hollenberg, “The nitrogen-vacancy colour centre in diamond,” Phys. Rep. 528(1), 1–45 (2013).
[Crossref]

Jiang, M.

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-Blind Avalanche Photodetector Based On Single ZnO-Ga2O3 Core-Shell Microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

Kodama, H.

S. Kono, T. Teraji, H. Kodama, K. Ichikawa, S. Ohnishi, and A. Sawabe, “Direct determination of the barrier height of Ti-based ohmic contact on p-type diamond (001),” Diamond Related Materials 60, 117–122 (2015).
[Crossref]

Koide, Y.

M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
[Crossref]

M. Liao, X. Wang, T. Teraji, S. Koizumi, and Y. Koide, “Light intensity dependence of photocurrent gain in single-crystal diamond detectors,” Phys. Rev. B 81(3), 033304 (2010).
[Crossref]

M. Liao and Y. Koide, “High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film,” Appl. Phys. Lett. 89(11), 113509 (2006).
[Crossref]

Koizumi, S.

M. Liao, X. Wang, T. Teraji, S. Koizumi, and Y. Koide, “Light intensity dependence of photocurrent gain in single-crystal diamond detectors,” Phys. Rev. B 81(3), 033304 (2010).
[Crossref]

A. BenMoussa, U. Schühle, K. Haenen, M. Nesládek, S. Koizumi, and J.-F. Hochedez, “PIN diamond detector development for LYRA,” Phys. Status Solidi 201(11), 2536–2541 (2004).
[Crossref]

Kono, S.

S. Kono, T. Teraji, H. Kodama, K. Ichikawa, S. Ohnishi, and A. Sawabe, “Direct determination of the barrier height of Ti-based ohmic contact on p-type diamond (001),” Diamond Related Materials 60, 117–122 (2015).
[Crossref]

Ley, L.

F. Maier, J. Ristein, and L. Ley, “Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces,” Phys. Rev. B 64(16), 165411 (2001).
[Crossref]

Li, F.

T.-F. Zhu, Z. Liu, Z. Liu, F. Li, M. Zhang, W. Wang, F. Wen, J. Wang, R. Bu, J. Zhang, and H. X. Wang, “Fabrication of monolithic diamond photodetector with microlenses,” Opt. Express 25(25), 31586–31594 (2017).
[Crossref] [PubMed]

Z. Liu, F. Li, W. Wang, J. Zhang, F. Lin, and H.-X. Wang, “Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector,” MRS Adv. 1(16), 1099–1104 (2016).
[Crossref]

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Fabrication of three dimensional diamond ultraviolet photodetector through down-top method,” Appl. Phys. Lett. 109(15), 153507 (2016).
[Crossref]

Liao, M.

M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
[Crossref]

M. Liao, X. Wang, T. Teraji, S. Koizumi, and Y. Koide, “Light intensity dependence of photocurrent gain in single-crystal diamond detectors,” Phys. Rev. B 81(3), 033304 (2010).
[Crossref]

M. Liao and Y. Koide, “High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film,” Appl. Phys. Lett. 89(11), 113509 (2006).
[Crossref]

Lin, F.

Z. Liu, F. Li, W. Wang, J. Zhang, F. Lin, and H.-X. Wang, “Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector,” MRS Adv. 1(16), 1099–1104 (2016).
[Crossref]

Liu, Z.

T.-F. Zhu, Z. Liu, Z. Liu, F. Li, M. Zhang, W. Wang, F. Wen, J. Wang, R. Bu, J. Zhang, and H. X. Wang, “Fabrication of monolithic diamond photodetector with microlenses,” Opt. Express 25(25), 31586–31594 (2017).
[Crossref] [PubMed]

T.-F. Zhu, Z. Liu, Z. Liu, F. Li, M. Zhang, W. Wang, F. Wen, J. Wang, R. Bu, J. Zhang, and H. X. Wang, “Fabrication of monolithic diamond photodetector with microlenses,” Opt. Express 25(25), 31586–31594 (2017).
[Crossref] [PubMed]

Z. Liu, F. Li, W. Wang, J. Zhang, F. Lin, and H.-X. Wang, “Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector,” MRS Adv. 1(16), 1099–1104 (2016).
[Crossref]

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Fabrication of three dimensional diamond ultraviolet photodetector through down-top method,” Appl. Phys. Lett. 109(15), 153507 (2016).
[Crossref]

Looi, H. J.

H. J. Looi, M. D. Whitfield, and R. B. Jackmana, “Metal–semiconductor–metal photodiodes fabricated from thin-film diamond,” Appl. Phys. Lett. 74, 3332 (1999).
[Crossref]

Maier, F.

F. Maier, J. Ristein, and L. Ley, “Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces,” Phys. Rev. B 64(16), 165411 (2001).
[Crossref]

Manson, N. B.

M. W. Doherty, N. B. Manson, P. Delaney, F. Jelezko, J. Wrachtrup, and L. C. L. Hollenberg, “The nitrogen-vacancy colour centre in diamond,” Phys. Rep. 528(1), 1–45 (2013).
[Crossref]

Marinelli, M.

E. Pace, F. Galluzzi, M. C. Rossi, S. Salvatori, M. Marinelli, and P. Paroli, “Electra-optical properties of diamond thin films as UV photodetectors,” Nucl. Instrum. Methods Phys. Res. A 387(1-2), 255–258 (1997).
[Crossref]

McKeag, R. D.

R. D. McKeag and R. B. Jackman, “Diamond UV photodetectors: sensitivity and speed for visible blind applications,” Diamond Related Materials 7(2-5), 513–518 (1998).
[Crossref]

Nesládek, M.

A. BenMoussa, U. Schühle, K. Haenen, M. Nesládek, S. Koizumi, and J.-F. Hochedez, “PIN diamond detector development for LYRA,” Phys. Status Solidi 201(11), 2536–2541 (2004).
[Crossref]

Ogura, M.

Y. Chen, M. Ogura, S. Yamasaki, and H. Okushi, “Ohmic contacts on p-type homoepitaxial diamond and their thermal stability,” Semicond. Sci. Technol. 20(8), 860–863 (2005).
[Crossref]

Ohnishi, S.

S. Kono, T. Teraji, H. Kodama, K. Ichikawa, S. Ohnishi, and A. Sawabe, “Direct determination of the barrier height of Ti-based ohmic contact on p-type diamond (001),” Diamond Related Materials 60, 117–122 (2015).
[Crossref]

Okushi, H.

Y. Chen, M. Ogura, S. Yamasaki, and H. Okushi, “Ohmic contacts on p-type homoepitaxial diamond and their thermal stability,” Semicond. Sci. Technol. 20(8), 860–863 (2005).
[Crossref]

Pace, E.

E. Pace, F. Galluzzi, M. C. Rossi, S. Salvatori, M. Marinelli, and P. Paroli, “Electra-optical properties of diamond thin films as UV photodetectors,” Nucl. Instrum. Methods Phys. Res. A 387(1-2), 255–258 (1997).
[Crossref]

S. Salvatori, E. Pace, M. C. Rossi, and F. Galluzzi, “Photoelectrical characteristics of diamond UV detectors: dependence on device design and film quality,” Diamond Related Materials 6(2-4), 361–366 (1997).
[Crossref]

Paroli, P.

E. Pace, F. Galluzzi, M. C. Rossi, S. Salvatori, M. Marinelli, and P. Paroli, “Electra-optical properties of diamond thin films as UV photodetectors,” Nucl. Instrum. Methods Phys. Res. A 387(1-2), 255–258 (1997).
[Crossref]

Ralchenko, V.

S. Salvatori, M. C. Rossi, F. Scotti, G. Conte, F. Galluzzi, and V. Ralchenko, “High-temperature performances of diamond-based UV-photodetectors,” Diamond Related Materials 9(3-6), 982–986 (2000).
[Crossref]

Ristein, J.

F. Maier, J. Ristein, and L. Ley, “Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces,” Phys. Rev. B 64(16), 165411 (2001).
[Crossref]

Rossi, M. C.

S. Salvatori, M. C. Rossi, F. Scotti, G. Conte, F. Galluzzi, and V. Ralchenko, “High-temperature performances of diamond-based UV-photodetectors,” Diamond Related Materials 9(3-6), 982–986 (2000).
[Crossref]

E. Pace, F. Galluzzi, M. C. Rossi, S. Salvatori, M. Marinelli, and P. Paroli, “Electra-optical properties of diamond thin films as UV photodetectors,” Nucl. Instrum. Methods Phys. Res. A 387(1-2), 255–258 (1997).
[Crossref]

S. Salvatori, E. Pace, M. C. Rossi, and F. Galluzzi, “Photoelectrical characteristics of diamond UV detectors: dependence on device design and film quality,” Diamond Related Materials 6(2-4), 361–366 (1997).
[Crossref]

Salvatori, S.

S. Salvatori, M. C. Rossi, F. Scotti, G. Conte, F. Galluzzi, and V. Ralchenko, “High-temperature performances of diamond-based UV-photodetectors,” Diamond Related Materials 9(3-6), 982–986 (2000).
[Crossref]

E. Pace, F. Galluzzi, M. C. Rossi, S. Salvatori, M. Marinelli, and P. Paroli, “Electra-optical properties of diamond thin films as UV photodetectors,” Nucl. Instrum. Methods Phys. Res. A 387(1-2), 255–258 (1997).
[Crossref]

S. Salvatori, E. Pace, M. C. Rossi, and F. Galluzzi, “Photoelectrical characteristics of diamond UV detectors: dependence on device design and film quality,” Diamond Related Materials 6(2-4), 361–366 (1997).
[Crossref]

Sang, L.

M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
[Crossref]

Sawabe, A.

S. Kono, T. Teraji, H. Kodama, K. Ichikawa, S. Ohnishi, and A. Sawabe, “Direct determination of the barrier height of Ti-based ohmic contact on p-type diamond (001),” Diamond Related Materials 60, 117–122 (2015).
[Crossref]

Schühle, U.

A. BenMoussa, U. Schühle, K. Haenen, M. Nesládek, S. Koizumi, and J.-F. Hochedez, “PIN diamond detector development for LYRA,” Phys. Status Solidi 201(11), 2536–2541 (2004).
[Crossref]

Scotti, F.

S. Salvatori, M. C. Rossi, F. Scotti, G. Conte, F. Galluzzi, and V. Ralchenko, “High-temperature performances of diamond-based UV-photodetectors,” Diamond Related Materials 9(3-6), 982–986 (2000).
[Crossref]

Sugeta, T.

T. Sugeta and T. Urisu, “High-Gain Metal-Semiconductor-Metal Photodetectors for High-speed Optoelectronic Circuits,” IEEE Trans. Electron Dev. 26(11), 1855–1856 (1979).
[Crossref]

Teraji, T.

S. Kono, T. Teraji, H. Kodama, K. Ichikawa, S. Ohnishi, and A. Sawabe, “Direct determination of the barrier height of Ti-based ohmic contact on p-type diamond (001),” Diamond Related Materials 60, 117–122 (2015).
[Crossref]

M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
[Crossref]

M. Liao, X. Wang, T. Teraji, S. Koizumi, and Y. Koide, “Light intensity dependence of photocurrent gain in single-crystal diamond detectors,” Phys. Rev. B 81(3), 033304 (2010).
[Crossref]

T. Teraji, S. Yoshizaki, H. Wada, M. Hamada, and T. Ito, “Highly sensitive UV photodetectors fabricated using high-quality single-crystalline CVD diamond films,” Diamond Related Materials 13(4-8), 858–862 (2004).
[Crossref]

Urisu, T.

T. Sugeta and T. Urisu, “High-Gain Metal-Semiconductor-Metal Photodetectors for High-speed Optoelectronic Circuits,” IEEE Trans. Electron Dev. 26(11), 1855–1856 (1979).
[Crossref]

Wada, H.

T. Teraji, S. Yoshizaki, H. Wada, M. Hamada, and T. Ito, “Highly sensitive UV photodetectors fabricated using high-quality single-crystalline CVD diamond films,” Diamond Related Materials 13(4-8), 858–862 (2004).
[Crossref]

Wang, F.

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-Blind Avalanche Photodetector Based On Single ZnO-Ga2O3 Core-Shell Microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

Wang, H. X.

Wang, H.-X.

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Fabrication of three dimensional diamond ultraviolet photodetector through down-top method,” Appl. Phys. Lett. 109(15), 153507 (2016).
[Crossref]

Z. Liu, F. Li, W. Wang, J. Zhang, F. Lin, and H.-X. Wang, “Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector,” MRS Adv. 1(16), 1099–1104 (2016).
[Crossref]

Wang, J.

T.-F. Zhu, Z. Liu, Z. Liu, F. Li, M. Zhang, W. Wang, F. Wen, J. Wang, R. Bu, J. Zhang, and H. X. Wang, “Fabrication of monolithic diamond photodetector with microlenses,” Opt. Express 25(25), 31586–31594 (2017).
[Crossref] [PubMed]

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Fabrication of three dimensional diamond ultraviolet photodetector through down-top method,” Appl. Phys. Lett. 109(15), 153507 (2016).
[Crossref]

Wang, W.

T.-F. Zhu, Z. Liu, Z. Liu, F. Li, M. Zhang, W. Wang, F. Wen, J. Wang, R. Bu, J. Zhang, and H. X. Wang, “Fabrication of monolithic diamond photodetector with microlenses,” Opt. Express 25(25), 31586–31594 (2017).
[Crossref] [PubMed]

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Fabrication of three dimensional diamond ultraviolet photodetector through down-top method,” Appl. Phys. Lett. 109(15), 153507 (2016).
[Crossref]

Z. Liu, F. Li, W. Wang, J. Zhang, F. Lin, and H.-X. Wang, “Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector,” MRS Adv. 1(16), 1099–1104 (2016).
[Crossref]

Wang, X.

M. Liao, X. Wang, T. Teraji, S. Koizumi, and Y. Koide, “Light intensity dependence of photocurrent gain in single-crystal diamond detectors,” Phys. Rev. B 81(3), 033304 (2010).
[Crossref]

Wang, Y.

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-Blind Avalanche Photodetector Based On Single ZnO-Ga2O3 Core-Shell Microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

Wen, F.

Whitfield, M. D.

H. J. Looi, M. D. Whitfield, and R. B. Jackmana, “Metal–semiconductor–metal photodiodes fabricated from thin-film diamond,” Appl. Phys. Lett. 74, 3332 (1999).
[Crossref]

M. D. Whitfield, S. S. M. Chan, and R. B. Jackman, “Thin film diamond photodiode for ultraviolet light detection,” Appl. Phys. Lett. 68(3), 290–292 (1996).
[Crossref]

Wrachtrup, J.

M. W. Doherty, N. B. Manson, P. Delaney, F. Jelezko, J. Wrachtrup, and L. C. L. Hollenberg, “The nitrogen-vacancy colour centre in diamond,” Phys. Rep. 528(1), 1–45 (2013).
[Crossref]

Yamasaki, S.

Y. Chen, M. Ogura, S. Yamasaki, and H. Okushi, “Ohmic contacts on p-type homoepitaxial diamond and their thermal stability,” Semicond. Sci. Technol. 20(8), 860–863 (2005).
[Crossref]

Yoshizaki, S.

T. Teraji, S. Yoshizaki, H. Wada, M. Hamada, and T. Ito, “Highly sensitive UV photodetectors fabricated using high-quality single-crystalline CVD diamond films,” Diamond Related Materials 13(4-8), 858–862 (2004).
[Crossref]

Zhang, J.

T.-F. Zhu, Z. Liu, Z. Liu, F. Li, M. Zhang, W. Wang, F. Wen, J. Wang, R. Bu, J. Zhang, and H. X. Wang, “Fabrication of monolithic diamond photodetector with microlenses,” Opt. Express 25(25), 31586–31594 (2017).
[Crossref] [PubMed]

Z. Liu, F. Li, W. Wang, J. Zhang, F. Lin, and H.-X. Wang, “Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector,” MRS Adv. 1(16), 1099–1104 (2016).
[Crossref]

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Fabrication of three dimensional diamond ultraviolet photodetector through down-top method,” Appl. Phys. Lett. 109(15), 153507 (2016).
[Crossref]

Zhang, M.

Zhao, B.

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-Blind Avalanche Photodetector Based On Single ZnO-Ga2O3 Core-Shell Microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

Zhao, D.

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-Blind Avalanche Photodetector Based On Single ZnO-Ga2O3 Core-Shell Microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

Zhu, T.-F.

Appl. Phys. Lett. (4)

M. D. Whitfield, S. S. M. Chan, and R. B. Jackman, “Thin film diamond photodiode for ultraviolet light detection,” Appl. Phys. Lett. 68(3), 290–292 (1996).
[Crossref]

H. J. Looi, M. D. Whitfield, and R. B. Jackmana, “Metal–semiconductor–metal photodiodes fabricated from thin-film diamond,” Appl. Phys. Lett. 74, 3332 (1999).
[Crossref]

M. Liao and Y. Koide, “High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film,” Appl. Phys. Lett. 89(11), 113509 (2006).
[Crossref]

Z. Liu, J.-P. Ao, F. Li, W. Wang, J. Wang, J. Zhang, and H.-X. Wang, “Fabrication of three dimensional diamond ultraviolet photodetector through down-top method,” Appl. Phys. Lett. 109(15), 153507 (2016).
[Crossref]

Diamond Related Materials (5)

S. Kono, T. Teraji, H. Kodama, K. Ichikawa, S. Ohnishi, and A. Sawabe, “Direct determination of the barrier height of Ti-based ohmic contact on p-type diamond (001),” Diamond Related Materials 60, 117–122 (2015).
[Crossref]

T. Teraji, S. Yoshizaki, H. Wada, M. Hamada, and T. Ito, “Highly sensitive UV photodetectors fabricated using high-quality single-crystalline CVD diamond films,” Diamond Related Materials 13(4-8), 858–862 (2004).
[Crossref]

S. Salvatori, M. C. Rossi, F. Scotti, G. Conte, F. Galluzzi, and V. Ralchenko, “High-temperature performances of diamond-based UV-photodetectors,” Diamond Related Materials 9(3-6), 982–986 (2000).
[Crossref]

R. D. McKeag and R. B. Jackman, “Diamond UV photodetectors: sensitivity and speed for visible blind applications,” Diamond Related Materials 7(2-5), 513–518 (1998).
[Crossref]

S. Salvatori, E. Pace, M. C. Rossi, and F. Galluzzi, “Photoelectrical characteristics of diamond UV detectors: dependence on device design and film quality,” Diamond Related Materials 6(2-4), 361–366 (1997).
[Crossref]

IEEE Trans. Electron Dev. (1)

T. Sugeta and T. Urisu, “High-Gain Metal-Semiconductor-Metal Photodetectors for High-speed Optoelectronic Circuits,” IEEE Trans. Electron Dev. 26(11), 1855–1856 (1979).
[Crossref]

Jpn. J. Appl. Phys. (1)

M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, “Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors,” Jpn. J. Appl. Phys. 51(9R), 090115 (2012).
[Crossref]

MRS Adv. (1)

Z. Liu, F. Li, W. Wang, J. Zhang, F. Lin, and H.-X. Wang, “Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector,” MRS Adv. 1(16), 1099–1104 (2016).
[Crossref]

Nano Lett. (1)

B. Zhao, F. Wang, H. Chen, Y. Wang, M. Jiang, X. Fang, and D. Zhao, “Solar-Blind Avalanche Photodetector Based On Single ZnO-Ga2O3 Core-Shell Microwire,” Nano Lett. 15(6), 3988–3993 (2015).
[Crossref] [PubMed]

Nucl. Instrum. Methods Phys. Res. A (1)

E. Pace, F. Galluzzi, M. C. Rossi, S. Salvatori, M. Marinelli, and P. Paroli, “Electra-optical properties of diamond thin films as UV photodetectors,” Nucl. Instrum. Methods Phys. Res. A 387(1-2), 255–258 (1997).
[Crossref]

Opt. Express (1)

Phys. Rep. (1)

M. W. Doherty, N. B. Manson, P. Delaney, F. Jelezko, J. Wrachtrup, and L. C. L. Hollenberg, “The nitrogen-vacancy colour centre in diamond,” Phys. Rep. 528(1), 1–45 (2013).
[Crossref]

Phys. Rev. B (2)

F. Maier, J. Ristein, and L. Ley, “Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces,” Phys. Rev. B 64(16), 165411 (2001).
[Crossref]

M. Liao, X. Wang, T. Teraji, S. Koizumi, and Y. Koide, “Light intensity dependence of photocurrent gain in single-crystal diamond detectors,” Phys. Rev. B 81(3), 033304 (2010).
[Crossref]

Phys. Status Solidi (1)

A. BenMoussa, U. Schühle, K. Haenen, M. Nesládek, S. Koizumi, and J.-F. Hochedez, “PIN diamond detector development for LYRA,” Phys. Status Solidi 201(11), 2536–2541 (2004).
[Crossref]

Semicond. Sci. Technol. (1)

Y. Chen, M. Ogura, S. Yamasaki, and H. Okushi, “Ohmic contacts on p-type homoepitaxial diamond and their thermal stability,” Semicond. Sci. Technol. 20(8), 860–863 (2005).
[Crossref]

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Figures (6)

Fig. 1
Fig. 1 Raman spectrum of the diamond. The inset shows the PL spectrum.
Fig. 2
Fig. 2 XPS spectra of (a) C1s and (b) Au 4f.
Fig. 3
Fig. 3 (a) I–V characteristics of the detector in dark and 210-nm illumination conditions. (b) Schematic of the band diagram with/without bias.
Fig. 4
Fig. 4 I–V characteristics under (a) different wavelengths and (b) same wavelength but different light power densities.
Fig. 5
Fig. 5 Responsivity of MSM-PD under 210-nm illumination depending on (a) voltage and (b) light power.
Fig. 6
Fig. 6 (a) Transient response of MSM-PD. (b) I–V characteristics of the MSM-PD in dark and 210-nm illumination conditions. The dark current is the realistic data, not the absolute value. The inset shows IV characteristics at some other wavelengths.

Equations (1)

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ϕ BH = E C1s Δ E diamond ( E metal_core Au_diamond E metal_core Au_reference )

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