Abstract

We present a silicon electro-optic transmitter consisting of a 28nm ultra-thin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) CMOS driver flip-chip integrated onto a Mach-Zehnder modulator. The Mach-Zehnder silicon optical modulator was optimized to have a 3dB bandwidth of around 25 GHz at −1V bias and a 50 Ω impedance. The UTBB FD-SOI CMOS driver provided a large output voltage swing around 5 Vpp to enable a high dynamic extinction ratio and a low device insertion loss. At 44 Gbps, the transmitter achieved a high extinction ratio of 6.4 dB at the modulator quadrature operation point. This result shows open eye diagrams at the highest bit rates and with the largest extinction ratios for silicon electro-optic transmitter using a CMOS driver.

© 2017 Optical Society of America

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References

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2016 (5)

I. García López, P. Rito, D. Micusik, A. Aimone, T. Brast, M. Gruner, G. Fiol, A. G. Steffan, J. Borngraber, L. Zimmermann, D. Kissinger, and A. C. Ulusoy, “High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators,” Analog Integr. Circuits Signal Process. 87(2), 105–115 (2016).
[Crossref]

I. García López, A. Aimone, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J. K. Fischer, J. Honecker, A. G. Steffan, D. Kissinger, A. C. Ulusoy, and M. Schell, “DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission at 32 GBd with Hybrid InP IQ SEMZM and BiCMOS Drivers Module,” J. Lightw. Technol.  35, 404–410 (2016).

S. Shopov and S. P. Voinigescu, “A 3× 60Gb/s Transmitter/Repeater Front-End with 4.3 V Single-Ended Output Swing in a 28nm UTBB FD-SOI Technology,” IEEE J. Solid-State Circuits 51(7), 1651–1662 (2016).
[Crossref]

C. Ma, W. D. Sacher, Z. Tang, J. C. Mikkelsen, Y. Yang, F. Xu, T. Thiessen, H.-K. Lo, and J. K. S. Poon, “Silicon photonic transmitter for polarization-encoded quantum key distribution,” Optica 3(11), 1274–1278 (2016).
[Crossref]

T. N. Huynh, N. Dupuis, R. Rimolo-Donadio, J. E. Proesel, D. M. Gill, C. W. Baks, A. V. Rylyakov, C. L. Schow, W. M. J. Green, and B. G. Lee, “Flexible Transmitter Employing Silicon-Segmented Mach–Zehnder Modulator With 32-nm CMOS Distributed Driver,” J. Lightwave Technol. 34(22), 5129–5136 (2016).
[Crossref]

2015 (1)

2014 (3)

2013 (2)

2012 (4)

J. Ding, H. Chen, L. Yang, L. Zhang, R. Ji, Y. Tian, W. Zhu, Y. Lu, P. Zhou, and R. Min, “Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS-compatible integration,” Opt. Express 20(3), 3209–3218 (2012).
[Crossref] [PubMed]

P. Dong, L. Chen, and Y.-K. Chen, “High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators,” Opt. Express 20(6), 6163–6169 (2012).
[Crossref] [PubMed]

D. Thomson, F. Gardes, J. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50Gbit/s silicon optical modulator,” IEEE Photonics Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

L. Chen, P. Dong, and Y.-K. Chen, “Chirp and dispersion tolerance of a single-drive push–pull silicon modulator at 28 Gb/s,” IEEE Photonics Technol. Lett. 24(11), 936–938 (2012).
[Crossref]

2011 (1)

2010 (2)

G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics 4(8), 518–526 (2010).
[Crossref]

T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

Aimone, A.

I. García López, P. Rito, D. Micusik, A. Aimone, T. Brast, M. Gruner, G. Fiol, A. G. Steffan, J. Borngraber, L. Zimmermann, D. Kissinger, and A. C. Ulusoy, “High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators,” Analog Integr. Circuits Signal Process. 87(2), 105–115 (2016).
[Crossref]

I. García López, A. Aimone, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J. K. Fischer, J. Honecker, A. G. Steffan, D. Kissinger, A. C. Ulusoy, and M. Schell, “DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission at 32 GBd with Hybrid InP IQ SEMZM and BiCMOS Drivers Module,” J. Lightw. Technol.  35, 404–410 (2016).

Alic, N.

D. Thomson, F. Gardes, J. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50Gbit/s silicon optical modulator,” IEEE Photonics Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Alreesh, S.

I. García López, A. Aimone, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J. K. Fischer, J. Honecker, A. G. Steffan, D. Kissinger, A. C. Ulusoy, and M. Schell, “DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission at 32 GBd with Hybrid InP IQ SEMZM and BiCMOS Drivers Module,” J. Lightw. Technol.  35, 404–410 (2016).

Ang, K.-W.

T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

Baehr-Jones, T.

Baks, C. W.

Barwicz, T.

Bergman, K.

R. Ding, Y. Liu, Y. Ma, Y. Yang, Q. Li, A. E.-J. Lim, G.-Q. Lo, K. Bergman, T. Baehr-Jones, and M. Hochberg, “High-speed silicon modulator with slow-wave electrodes and fully independent differential drive,” J. Lightwave Technol. 32(12), 2240–2247 (2014).
[Crossref]

R. Ding, Y. Liu, Q. Li, Y. Yang, Y. Ma, K. Padmaraju, A. E. J. Lim, G. Q. Lo, K. Bergman, T. Baehr-Jones, and M. Hochberg, “Design and characterization of a 30-GHz bandwidth low-power silicon traveling-wave modulator,” Opt. Commun. 321, 124–133 (2014).
[Crossref]

Boeuf, F.

Borngraber, J.

I. García López, P. Rito, D. Micusik, A. Aimone, T. Brast, M. Gruner, G. Fiol, A. G. Steffan, J. Borngraber, L. Zimmermann, D. Kissinger, and A. C. Ulusoy, “High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators,” Analog Integr. Circuits Signal Process. 87(2), 105–115 (2016).
[Crossref]

Brast, T.

I. García López, P. Rito, D. Micusik, A. Aimone, T. Brast, M. Gruner, G. Fiol, A. G. Steffan, J. Borngraber, L. Zimmermann, D. Kissinger, and A. C. Ulusoy, “High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators,” Analog Integr. Circuits Signal Process. 87(2), 105–115 (2016).
[Crossref]

I. García López, A. Aimone, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J. K. Fischer, J. Honecker, A. G. Steffan, D. Kissinger, A. C. Ulusoy, and M. Schell, “DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission at 32 GBd with Hybrid InP IQ SEMZM and BiCMOS Drivers Module,” J. Lightw. Technol.  35, 404–410 (2016).

Celo, D.

D. Celo, D. J. Goodwill1, J. Jiang, P. Dumais, M. Li, and E. Bernier, “Thermo-optic silicon photonics with low power and extreme resilience to over-drive,” IEEE Optical Interconnects Conference (OI), IEEE, 2016.

Chee, E. K. S.

Chen, A.

G. Denoyers, A. Chen, B. Park, Y. Zhou, A. Santipo, and R. Russo, “Hybrid silicon photonic circuits and transceiver for 56 Gb/s NRZ 2.2 km transmission over single mode fiber,” In Proc. ECOC, 2014, pp. 1–3.

Chen, H.

Chen, J.

Chen, L.

P. Dong, L. Chen, and Y.-K. Chen, “High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators,” Opt. Express 20(6), 6163–6169 (2012).
[Crossref] [PubMed]

L. Chen, P. Dong, and Y.-K. Chen, “Chirp and dispersion tolerance of a single-drive push–pull silicon modulator at 28 Gb/s,” IEEE Photonics Technol. Lett. 24(11), 936–938 (2012).
[Crossref]

Chen, Y.-K.

L. Chen, P. Dong, and Y.-K. Chen, “Chirp and dispersion tolerance of a single-drive push–pull silicon modulator at 28 Gb/s,” IEEE Photonics Technol. Lett. 24(11), 936–938 (2012).
[Crossref]

P. Dong, L. Chen, and Y.-K. Chen, “High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators,” Opt. Express 20(6), 6163–6169 (2012).
[Crossref] [PubMed]

Cole, C.

Crémer, S.

Denoyer, G.

Denoyers, G.

G. Denoyers, A. Chen, B. Park, Y. Zhou, A. Santipo, and R. Russo, “Hybrid silicon photonic circuits and transceiver for 56 Gb/s NRZ 2.2 km transmission over single mode fiber,” In Proc. ECOC, 2014, pp. 1–3.

Ding, J.

Ding, R.

Dong, P.

P. Dong, L. Chen, and Y.-K. Chen, “High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators,” Opt. Express 20(6), 6163–6169 (2012).
[Crossref] [PubMed]

L. Chen, P. Dong, and Y.-K. Chen, “Chirp and dispersion tolerance of a single-drive push–pull silicon modulator at 28 Gb/s,” IEEE Photonics Technol. Lett. 24(11), 936–938 (2012).
[Crossref]

Dupuis, N.

Emerson, N. G.

Fang, Q.

T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

Fedeli, J.

D. Thomson, F. Gardes, J. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50Gbit/s silicon optical modulator,” IEEE Photonics Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Fiol, G.

I. García López, P. Rito, D. Micusik, A. Aimone, T. Brast, M. Gruner, G. Fiol, A. G. Steffan, J. Borngraber, L. Zimmermann, D. Kissinger, and A. C. Ulusoy, “High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators,” Analog Integr. Circuits Signal Process. 87(2), 105–115 (2016).
[Crossref]

I. García López, A. Aimone, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J. K. Fischer, J. Honecker, A. G. Steffan, D. Kissinger, A. C. Ulusoy, and M. Schell, “DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission at 32 GBd with Hybrid InP IQ SEMZM and BiCMOS Drivers Module,” J. Lightw. Technol.  35, 404–410 (2016).

Fischer, J. K.

I. García López, A. Aimone, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J. K. Fischer, J. Honecker, A. G. Steffan, D. Kissinger, A. C. Ulusoy, and M. Schell, “DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission at 32 GBd with Hybrid InP IQ SEMZM and BiCMOS Drivers Module,” J. Lightw. Technol.  35, 404–410 (2016).

García López, I.

I. García López, P. Rito, D. Micusik, A. Aimone, T. Brast, M. Gruner, G. Fiol, A. G. Steffan, J. Borngraber, L. Zimmermann, D. Kissinger, and A. C. Ulusoy, “High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators,” Analog Integr. Circuits Signal Process. 87(2), 105–115 (2016).
[Crossref]

I. García López, A. Aimone, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J. K. Fischer, J. Honecker, A. G. Steffan, D. Kissinger, A. C. Ulusoy, and M. Schell, “DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission at 32 GBd with Hybrid InP IQ SEMZM and BiCMOS Drivers Module,” J. Lightw. Technol.  35, 404–410 (2016).

Gardes, F.

D. Thomson, F. Gardes, J. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50Gbit/s silicon optical modulator,” IEEE Photonics Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Gardes, F. Y.

F. Y. Gardes, D. J. Thomson, N. G. Emerson, and G. T. Reed, “40 Gb/s silicon photonics modulator for TE and TM polarisations,” Opt. Express 19(12), 11804–11814 (2011).
[Crossref] [PubMed]

G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics 4(8), 518–526 (2010).
[Crossref]

Gill, D. M.

Green, W. M. J.

Gruner, M.

I. García López, A. Aimone, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J. K. Fischer, J. Honecker, A. G. Steffan, D. Kissinger, A. C. Ulusoy, and M. Schell, “DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission at 32 GBd with Hybrid InP IQ SEMZM and BiCMOS Drivers Module,” J. Lightw. Technol.  35, 404–410 (2016).

I. García López, P. Rito, D. Micusik, A. Aimone, T. Brast, M. Gruner, G. Fiol, A. G. Steffan, J. Borngraber, L. Zimmermann, D. Kissinger, and A. C. Ulusoy, “High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators,” Analog Integr. Circuits Signal Process. 87(2), 105–115 (2016).
[Crossref]

Hochberg, M.

Höhns, V.

I. García López, A. Aimone, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J. K. Fischer, J. Honecker, A. G. Steffan, D. Kissinger, A. C. Ulusoy, and M. Schell, “DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission at 32 GBd with Hybrid InP IQ SEMZM and BiCMOS Drivers Module,” J. Lightw. Technol.  35, 404–410 (2016).

Honecker, J.

I. García López, A. Aimone, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J. K. Fischer, J. Honecker, A. G. Steffan, D. Kissinger, A. C. Ulusoy, and M. Schell, “DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission at 32 GBd with Hybrid InP IQ SEMZM and BiCMOS Drivers Module,” J. Lightw. Technol.  35, 404–410 (2016).

Hu, Y.

D. Thomson, F. Gardes, J. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50Gbit/s silicon optical modulator,” IEEE Photonics Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Huynh, T. N.

Ji, R.

Kissinger, D.

I. García López, A. Aimone, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J. K. Fischer, J. Honecker, A. G. Steffan, D. Kissinger, A. C. Ulusoy, and M. Schell, “DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission at 32 GBd with Hybrid InP IQ SEMZM and BiCMOS Drivers Module,” J. Lightw. Technol.  35, 404–410 (2016).

I. García López, P. Rito, D. Micusik, A. Aimone, T. Brast, M. Gruner, G. Fiol, A. G. Steffan, J. Borngraber, L. Zimmermann, D. Kissinger, and A. C. Ulusoy, “High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators,” Analog Integr. Circuits Signal Process. 87(2), 105–115 (2016).
[Crossref]

Kuo, B.

D. Thomson, F. Gardes, J. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50Gbit/s silicon optical modulator,” IEEE Photonics Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Kwong, D.-L.

T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

Lee, B. G.

Li, L.

Li, Q.

R. Ding, Y. Liu, Y. Ma, Y. Yang, Q. Li, A. E.-J. Lim, G.-Q. Lo, K. Bergman, T. Baehr-Jones, and M. Hochberg, “High-speed silicon modulator with slow-wave electrodes and fully independent differential drive,” J. Lightwave Technol. 32(12), 2240–2247 (2014).
[Crossref]

R. Ding, Y. Liu, Q. Li, Y. Yang, Y. Ma, K. Padmaraju, A. E. J. Lim, G. Q. Lo, K. Bergman, T. Baehr-Jones, and M. Hochberg, “Design and characterization of a 30-GHz bandwidth low-power silicon traveling-wave modulator,” Opt. Commun. 321, 124–133 (2014).
[Crossref]

Lim, A. E. J.

R. Ding, Y. Liu, Q. Li, Y. Yang, Y. Ma, K. Padmaraju, A. E. J. Lim, G. Q. Lo, K. Bergman, T. Baehr-Jones, and M. Hochberg, “Design and characterization of a 30-GHz bandwidth low-power silicon traveling-wave modulator,” Opt. Commun. 321, 124–133 (2014).
[Crossref]

M. Streshinsky, R. Ding, Y. Liu, A. Novack, Y. Yang, Y. Ma, X. Tu, E. K. S. Chee, A. E. J. Lim, P. G. Q. Lo, T. Baehr-Jones, and M. Hochberg, “Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm,” Opt. Express 21(25), 30350–30357 (2013).
[Crossref] [PubMed]

Lim, A. E.-J.

Liow, T.-Y.

T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

Liu, Y.

Lo, G. Q.

R. Ding, Y. Liu, Q. Li, Y. Yang, Y. Ma, K. Padmaraju, A. E. J. Lim, G. Q. Lo, K. Bergman, T. Baehr-Jones, and M. Hochberg, “Design and characterization of a 30-GHz bandwidth low-power silicon traveling-wave modulator,” Opt. Commun. 321, 124–133 (2014).
[Crossref]

Lo, G.-Q.

R. Ding, Y. Liu, Y. Ma, Y. Yang, Q. Li, A. E.-J. Lim, G.-Q. Lo, K. Bergman, T. Baehr-Jones, and M. Hochberg, “High-speed silicon modulator with slow-wave electrodes and fully independent differential drive,” J. Lightwave Technol. 32(12), 2240–2247 (2014).
[Crossref]

T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

Lo, H.-K.

Lo, P. G. Q.

Lu, Y.

Ma, C.

Ma, Y.

Mashanovich, G.

G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics 4(8), 518–526 (2010).
[Crossref]

Mashanovich, G. Z.

D. Thomson, F. Gardes, J. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50Gbit/s silicon optical modulator,” IEEE Photonics Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Micusik, D.

I. García López, P. Rito, D. Micusik, A. Aimone, T. Brast, M. Gruner, G. Fiol, A. G. Steffan, J. Borngraber, L. Zimmermann, D. Kissinger, and A. C. Ulusoy, “High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators,” Analog Integr. Circuits Signal Process. 87(2), 105–115 (2016).
[Crossref]

Mikkelsen, J. C.

Min, R.

Myslivets, E.

D. Thomson, F. Gardes, J. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50Gbit/s silicon optical modulator,” IEEE Photonics Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Novack, A.

Padmaraju, K.

R. Ding, Y. Liu, Q. Li, Y. Yang, Y. Ma, K. Padmaraju, A. E. J. Lim, G. Q. Lo, K. Bergman, T. Baehr-Jones, and M. Hochberg, “Design and characterization of a 30-GHz bandwidth low-power silicon traveling-wave modulator,” Opt. Commun. 321, 124–133 (2014).
[Crossref]

Park, B.

G. Denoyer, C. Cole, A. Santipo, R. Russo, C. Robinson, L. Li, Y. Zhou, J. Chen, B. Park, F. Boeuf, S. Crémer, and N. Vulliet, “Hybrid silicon photonic circuits and transceiver for 50 Gb/s NRZ transmission over single-mode fiber,” J. Lightwave Technol. 33(6), 1247–1254 (2015).
[Crossref]

G. Denoyers, A. Chen, B. Park, Y. Zhou, A. Santipo, and R. Russo, “Hybrid silicon photonic circuits and transceiver for 56 Gb/s NRZ 2.2 km transmission over single mode fiber,” In Proc. ECOC, 2014, pp. 1–3.

Poon, J. K. S.

Proesel, J. E.

Radic, S.

D. Thomson, F. Gardes, J. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50Gbit/s silicon optical modulator,” IEEE Photonics Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Reed, G. T.

D. Thomson, F. Gardes, J. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50Gbit/s silicon optical modulator,” IEEE Photonics Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

F. Y. Gardes, D. J. Thomson, N. G. Emerson, and G. T. Reed, “40 Gb/s silicon photonics modulator for TE and TM polarisations,” Opt. Express 19(12), 11804–11814 (2011).
[Crossref] [PubMed]

G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics 4(8), 518–526 (2010).
[Crossref]

Rimolo-Donadio, R.

Rito, P.

I. García López, A. Aimone, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J. K. Fischer, J. Honecker, A. G. Steffan, D. Kissinger, A. C. Ulusoy, and M. Schell, “DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission at 32 GBd with Hybrid InP IQ SEMZM and BiCMOS Drivers Module,” J. Lightw. Technol.  35, 404–410 (2016).

I. García López, P. Rito, D. Micusik, A. Aimone, T. Brast, M. Gruner, G. Fiol, A. G. Steffan, J. Borngraber, L. Zimmermann, D. Kissinger, and A. C. Ulusoy, “High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators,” Analog Integr. Circuits Signal Process. 87(2), 105–115 (2016).
[Crossref]

Robinson, C.

Russo, R.

G. Denoyer, C. Cole, A. Santipo, R. Russo, C. Robinson, L. Li, Y. Zhou, J. Chen, B. Park, F. Boeuf, S. Crémer, and N. Vulliet, “Hybrid silicon photonic circuits and transceiver for 50 Gb/s NRZ transmission over single-mode fiber,” J. Lightwave Technol. 33(6), 1247–1254 (2015).
[Crossref]

G. Denoyers, A. Chen, B. Park, Y. Zhou, A. Santipo, and R. Russo, “Hybrid silicon photonic circuits and transceiver for 56 Gb/s NRZ 2.2 km transmission over single mode fiber,” In Proc. ECOC, 2014, pp. 1–3.

Rylyakov, A. V.

Sacher, W. D.

Santipo, A.

G. Denoyer, C. Cole, A. Santipo, R. Russo, C. Robinson, L. Li, Y. Zhou, J. Chen, B. Park, F. Boeuf, S. Crémer, and N. Vulliet, “Hybrid silicon photonic circuits and transceiver for 50 Gb/s NRZ transmission over single-mode fiber,” J. Lightwave Technol. 33(6), 1247–1254 (2015).
[Crossref]

G. Denoyers, A. Chen, B. Park, Y. Zhou, A. Santipo, and R. Russo, “Hybrid silicon photonic circuits and transceiver for 56 Gb/s NRZ 2.2 km transmission over single mode fiber,” In Proc. ECOC, 2014, pp. 1–3.

Schell, M.

I. García López, A. Aimone, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J. K. Fischer, J. Honecker, A. G. Steffan, D. Kissinger, A. C. Ulusoy, and M. Schell, “DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission at 32 GBd with Hybrid InP IQ SEMZM and BiCMOS Drivers Module,” J. Lightw. Technol.  35, 404–410 (2016).

Schow, C. L.

Shopov, S.

S. Shopov and S. P. Voinigescu, “A 3× 60Gb/s Transmitter/Repeater Front-End with 4.3 V Single-Ended Output Swing in a 28nm UTBB FD-SOI Technology,” IEEE J. Solid-State Circuits 51(7), 1651–1662 (2016).
[Crossref]

Song, J.-F.

T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

Steffan, A. G.

I. García López, A. Aimone, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J. K. Fischer, J. Honecker, A. G. Steffan, D. Kissinger, A. C. Ulusoy, and M. Schell, “DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission at 32 GBd with Hybrid InP IQ SEMZM and BiCMOS Drivers Module,” J. Lightw. Technol.  35, 404–410 (2016).

I. García López, P. Rito, D. Micusik, A. Aimone, T. Brast, M. Gruner, G. Fiol, A. G. Steffan, J. Borngraber, L. Zimmermann, D. Kissinger, and A. C. Ulusoy, “High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators,” Analog Integr. Circuits Signal Process. 87(2), 105–115 (2016).
[Crossref]

Streshinsky, M.

Tang, Z.

Taylor, B. J. F.

Thiessen, T.

Thomson, D.

D. Thomson, F. Gardes, J. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50Gbit/s silicon optical modulator,” IEEE Photonics Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Thomson, D. J.

F. Y. Gardes, D. J. Thomson, N. G. Emerson, and G. T. Reed, “40 Gb/s silicon photonics modulator for TE and TM polarisations,” Opt. Express 19(12), 11804–11814 (2011).
[Crossref] [PubMed]

G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics 4(8), 518–526 (2010).
[Crossref]

Tian, Y.

Tu, X.

Ulusoy, A. C.

I. García López, A. Aimone, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J. K. Fischer, J. Honecker, A. G. Steffan, D. Kissinger, A. C. Ulusoy, and M. Schell, “DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission at 32 GBd with Hybrid InP IQ SEMZM and BiCMOS Drivers Module,” J. Lightw. Technol.  35, 404–410 (2016).

I. García López, P. Rito, D. Micusik, A. Aimone, T. Brast, M. Gruner, G. Fiol, A. G. Steffan, J. Borngraber, L. Zimmermann, D. Kissinger, and A. C. Ulusoy, “High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators,” Analog Integr. Circuits Signal Process. 87(2), 105–115 (2016).
[Crossref]

Voinigescu, S. P.

S. Shopov and S. P. Voinigescu, “A 3× 60Gb/s Transmitter/Repeater Front-End with 4.3 V Single-Ended Output Swing in a 28nm UTBB FD-SOI Technology,” IEEE J. Solid-State Circuits 51(7), 1651–1662 (2016).
[Crossref]

Vulliet, N.

Xiong, Y.-Z.

T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

Xu, F.

Yang, L.

Yang, Y.

Yu, M.-B.

T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

Zhang, L.

Zhou, P.

Zhou, Y.

G. Denoyer, C. Cole, A. Santipo, R. Russo, C. Robinson, L. Li, Y. Zhou, J. Chen, B. Park, F. Boeuf, S. Crémer, and N. Vulliet, “Hybrid silicon photonic circuits and transceiver for 50 Gb/s NRZ transmission over single-mode fiber,” J. Lightwave Technol. 33(6), 1247–1254 (2015).
[Crossref]

G. Denoyers, A. Chen, B. Park, Y. Zhou, A. Santipo, and R. Russo, “Hybrid silicon photonic circuits and transceiver for 56 Gb/s NRZ 2.2 km transmission over single mode fiber,” In Proc. ECOC, 2014, pp. 1–3.

Zhu, W.

Zimmermann, L.

I. García López, P. Rito, D. Micusik, A. Aimone, T. Brast, M. Gruner, G. Fiol, A. G. Steffan, J. Borngraber, L. Zimmermann, D. Kissinger, and A. C. Ulusoy, “High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators,” Analog Integr. Circuits Signal Process. 87(2), 105–115 (2016).
[Crossref]

Zlatanovic, S.

D. Thomson, F. Gardes, J. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50Gbit/s silicon optical modulator,” IEEE Photonics Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

Analog Integr. Circuits Signal Process. (1)

I. García López, P. Rito, D. Micusik, A. Aimone, T. Brast, M. Gruner, G. Fiol, A. G. Steffan, J. Borngraber, L. Zimmermann, D. Kissinger, and A. C. Ulusoy, “High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators,” Analog Integr. Circuits Signal Process. 87(2), 105–115 (2016).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron. 16(1), 307–315 (2010).
[Crossref]

IEEE J. Solid-State Circuits (1)

S. Shopov and S. P. Voinigescu, “A 3× 60Gb/s Transmitter/Repeater Front-End with 4.3 V Single-Ended Output Swing in a 28nm UTBB FD-SOI Technology,” IEEE J. Solid-State Circuits 51(7), 1651–1662 (2016).
[Crossref]

IEEE Photonics Technol. Lett. (2)

D. Thomson, F. Gardes, J. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50Gbit/s silicon optical modulator,” IEEE Photonics Technol. Lett. 24(4), 234–236 (2012).
[Crossref]

L. Chen, P. Dong, and Y.-K. Chen, “Chirp and dispersion tolerance of a single-drive push–pull silicon modulator at 28 Gb/s,” IEEE Photonics Technol. Lett. 24(11), 936–938 (2012).
[Crossref]

J. Lightw. Technol (1)

I. García López, A. Aimone, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J. K. Fischer, J. Honecker, A. G. Steffan, D. Kissinger, A. C. Ulusoy, and M. Schell, “DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission at 32 GBd with Hybrid InP IQ SEMZM and BiCMOS Drivers Module,” J. Lightw. Technol.  35, 404–410 (2016).

J. Lightwave Technol. (4)

Nat. Photonics (1)

G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics 4(8), 518–526 (2010).
[Crossref]

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R. Ding, Y. Liu, Q. Li, Y. Yang, Y. Ma, K. Padmaraju, A. E. J. Lim, G. Q. Lo, K. Bergman, T. Baehr-Jones, and M. Hochberg, “Design and characterization of a 30-GHz bandwidth low-power silicon traveling-wave modulator,” Opt. Commun. 321, 124–133 (2014).
[Crossref]

Opt. Express (5)

Optica (1)

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E. Temporiti, G. Minoia, M. Repossi, D. Baldi, A. Ghilioni, and F. Svelto, “A 56Gb/s 300mW silicon-photonics transmitter in 3D-integrated PIC25G and 55nm BiCMOS technologies,” ISSCC, 2016, pp. 404–405.

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B. G. Lee, R. Rimolo-Donadio, A. V. Rylyakov, J. Proesel, J. F. Bulzacchelli, C. W. Baks, M. Meghelli, C. L. Schow, A. Ramaswamy, J. E. Roth, J. H. Shin, B. Koch, D. K. Sparacin and G. A. Fish, “A WDM-compatible 4× 32-Gb/s CMOS-driven electro-absorption modulator array,” OFC, 2015. Paper Tu3G.3.
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G. Denoyers, A. Chen, B. Park, Y. Zhou, A. Santipo, and R. Russo, “Hybrid silicon photonic circuits and transceiver for 56 Gb/s NRZ 2.2 km transmission over single mode fiber,” In Proc. ECOC, 2014, pp. 1–3.

W. D. Sacher, Z. Yong, J. C. Mikkelsen, A. Bois, Y. Yang, J. C. C. Mak, P. Dumais, D. Goodwill, C. Ma, J. Jeong, E. Bernier, and J. K. S. Poon, “Multilayer silicon nitride-on-silicon integrated photonic platform for 3D photonic circuits,” Lasers and Electro-Optics (CLEO), 2016 Conference on. IEEE, 2016.
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D. Celo, D. J. Goodwill1, J. Jiang, P. Dumais, M. Li, and E. Bernier, “Thermo-optic silicon photonics with low power and extreme resilience to over-drive,” IEEE Optical Interconnects Conference (OI), IEEE, 2016.

M. Cignoli, G. Minoia, M. Repossi, D. Baldi, A. Ghilioni, E. Temporiti and F. Svelto, “1310nm 3D-integrated silicon photonics Mach-Zehnder-based transmitter with 275mW multistage CMOS driver achieving 6dB extinction ratio at 25Gb/s,” ISSCC, 2015. Paper 22.9A.
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D. M. Kuchta, C. L. Schow, A. V. Rylyakov, J. E. Proesel, F. E. Doany, C. Baks, B. H. Hamel-Bissell, C. Kocot, L. Graham, R. Johnson, G. Landry, E. Shaw, A. MacInnes, J. Tatum, “A 56.1Gb/s NRZ modulated 850nm VCSEL-based optical link,” OFC, 2013. Paper OW1B.5.
[Crossref]

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Figures (7)

Fig. 1
Fig. 1 (a) Cross-section schematic of the phase-shifter in the MZM. The dimensions are indicated. Simulated (b) RF effective refractive index, (c) characteristic impedance, and (d) RF loss.
Fig. 2
Fig. 2 Optical micrograph of Si MZM.
Fig. 3
Fig. 3 (a) The Si MZM transmission at different reverse bias voltages applied to the bottom arm. (b) Extracted phase shift of top and bottom arm.
Fig. 4
Fig. 4 The (a) S11 and (b) EO S21 parameters of the Si MZM. The output RF signal power of the VNA was 0 dBm.
Fig. 5
Fig. 5 Optical micrographs of (a) EIC, (b) EIC with solder bumps, (c) bond region after flip-chip bonding, and (d) 3D EO-transmitter assembly.
Fig. 6
Fig. 6 The (a) S11 and (b) EO S21 of the integrated assembly. The output RF power of the VNA was 0 dBm.
Fig. 7
Fig. 7 Measured output eye diagrams of the integrated assembly for a PRBS31 pattern at (a) 30, (b) 36, (c) 40 and (d) 44 Gbps.

Tables (1)

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Table 1 Comparison of Performance of 3D integrated Si MZM EO Transmitters

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