Abstract

Intersubband absorption properties of lattice-matched BGaN/AlN quantum well (QW) structures grown on AlN substrate are theoretically investigated using an effective mass theory considering the nonparabolicity of the conduction band. These results are compared with those of GaN/AlN QW structures. The intersubband absorption coefficient of the BGaN/AlN QW structure is shown to be enhanced significantly, compared to that of the conventional GaN/AlN QW structure. This can be explained by the fact that the BGaN/AlN QW structure exhibits larger intersuband dipole moment and quasi-Fermi-level separation than the GaN/AlN QW structure, due to the increase in the carrier confinement by a larger internal field. We expect that the BGaN/AlN QW structure with a high absorption coefficient can be used for telecommunication applications at 1.55 µm under the lattice-matched condition, instead of the conventional GaN/AlN QW structure with the large strain.

© 2017 Optical Society of America

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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2015 (2)

A Kadys, J MickevicȈius, T Malinauskas, J JurkevicȈius, M Kolenda, S Stanionyté, D Dobrovolskas, and G Tamulaitis, “Optical and structural properties of BGaN layers grown on different substrates,” J. Phys. D: Appl. Phys. 48(46), 465307 (2015).
[Crossref]

A. Kadys, J. Mickevičius, T. Malinauskas, J. Jurkevičius, M. Kolenda, S. Stanionytė, D. Dobrovolskas, and G. Tamulaitis, “Optical and structural properties of BGaN layers grown on different substrates,” J. Phys. D: Appl. Phys. 48, 465307 (2015).
[Crossref]

2014 (1)

C. E. Dreyer, J. L. Lyons, A. Janotti, and C. G. Van de Walle, “Band alignments and polarization properties of BN polymorphs,” Appl. Phys. Express 7, 031001 (2014).
[Crossref]

2012 (1)

H. Akabli, A. Almaggoussi, A. Abounadi, A. Rajira, K. Berland, and T. G. Andersson, “Intersubband energies in Al1−y Iny N/Ga1−i Inx N heterostructures with lattice constant close to aGaN,” Superlat. Microstruct. 52(1), 70–77 (2012).
[Crossref]

2011 (1)

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, D. Troadec, A. Soltani, L. Largeau, O. Mauguin, and A. Ougazzaden, “Deep structural analysis of novel BGaN material layers grown by MOVPE,” J. Cryst. Growth 315, 288–291 (2011).
[Crossref]

2010 (1)

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

2008 (2)

A. Ougazzaden, S. Gautier, T. Moudakir, Z. Djebbour, Z. Lochner, S. Choi, H. J. Kim, J.-H. Ryou, R. D. Dupuis, and A. A. Sirenko, “Bandgap bowing in BGaN thin films,” Appl. Phys. Lett. 93(8), 083118 (2008).
[Crossref]

A. Ougazzaden, S. Gautier, T. Moudakir, Z. Djebbour, Z. Lochner, S. Choi, H. J. Kim, J.-H. Ryou, R. D. Dupuis, and A. A. Sirenko, “Bandgap bowing in BGaN thin films,” Appl. Phys. Lett. 93, 083118 (2008).
[Crossref]

2007 (2)

X.Y. Liu, T. Aggerstam, P. Jänes, P. Holmström, S. Lourdudoss, L. Thylénc, and T.G. Andersson, “Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy,” J. Cryst. Growth 301, 457–460 (2007).
[Crossref]

R. Butté, J.F. Carlin, E. Feltin, M. Gonschorek, S. Nicolay, G. Christmann, D. Simeonov, A. Castiglia, J. Dorsaz, H.J. Buehlmann, S. Christopoulos, G. Baldassarri Hoger von Hogersthal, A.J.D. Grundy, M. Mosca, C. Pinquier, M.A. Py, F. Demangeat, J. Frandon, P.G. Lagoudakis, J.J. Baumberg, and N. Grandjean, “Current status of AlInN layers lattice-matched to GaN for photonics and electronics,” J. Phys. D 40(20), 6328 (2007).
[Crossref]

2006 (1)

S.-H. Park and D. Ahn, “Intersubband energies in strain-compensated InGaN/AlInN quantum well structures,” AIP Advances 6(1), 015014 (2006).
[Crossref]

2005 (2)

R. Butté, E. Feltin, J. Dorsaz, G. Christmann, J.F. Carlin, N. Grandjean, and M. Ilegems, “Recent progress in the growth of highly reflective nitride-based distributed Bragg reflectors and their use in microcavities,” Jpn J. Appl. Phys. 44(10), 7207 (2005).
[Crossref]

J. M. Li, Y. W. Lu, X.X. Han, J.J. Wu, X.L. Liu, Q.S. Zhu, and Z.G. Wang, “Theoretical investigation of intersubband transition in Alx Ga1−x N/GaN/Aly Ga1−y N step quantum well,” Physica E 28(4), 453–461 (2005).
[Crossref]

2003 (4)

V. D. Jovanović, Z. Ikonić, D. Indjin, P. Harrison, V. Milanovic, and R. A. Soref, “Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths,” J. Appl. Phys. 93(6), 3194–3197 (2003).
[Crossref]

J. Radovanović, V. Milanović, Z. Ikonić, D. Indjin, V. Jovanović, and P. Harrison, “Optimal design of GaN-AlGaN Bragg-confined structures for intersubband absorption in the near-infrared spectral range,” IEEE J. Quant. Electron. 39(10), 1297–1304 (2003).
[Crossref]

I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94, 3675–3696 (2003).
[Crossref]

S. Watanabe, T. Takano, K. Jinen, J. Yamamoto, and H. Kawanishi, “Refractive indices of Bx Al1−x N (x = 0–0.012) and By Ga1−y N (y = 0–0.023) epitaxial layers in ultraviolet region,” Phys. Stat. Sol. (C) 0, 2691–2694 (2003)
[Crossref]

2002 (2)

K. Kishino, A. Kikuchi, H. Kanazawa, and T. Tachibana, “Intersubband transition in (GaN)m/(AIN)n superlattices in the wavelength range from 1.08 to 1.61 μ m,” Appl. Phys. Lett. 81(7), 1234–1236 (2002).
[Crossref]

N. Iizuka, K. Kaneko, and N. Suzuki, “Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy,” Appl. Phys. Lett. 81(10), 1803–1805 (2002).
[Crossref]

2001 (1)

C. Gmachl, H. M. Ng, and A. Y. Cho, “Intersubband absorption in degenerately doped GaN/Alx Ga1−x N coupled double quantum wells,” Appl. Phys. Lett. 79(11), 1590–1592 (2001).
[Crossref]

2000 (3)

C. Gmachl, H. M. Ng, S.-N. G. Chu, and A. Y. Cho, “Intersubband absorption at λ ∼ 1.55μ m in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers,” Appl. Phys. Lett. 77(23), 3722–3724 (2000).
[Crossref]

T. Honda, M. Shibata, M. Kurimoto, M. Tsubamoto, J. Yamamoto, and H. Kawanishi, “Band-gap energy and effective mass of BGaN,” Jpn. J. Appl. Phys. 39(4B), 2389 (2000).
[Crossref]

S.-H. Park, Y.-T. Lee, and D. Ahn, “Spontaneous polarization and piezoelectric effects on intraband relaxation time in a wurtzite GaN/AlGaN quantum well,” Appl. Phys. A 71, 589–592 (2000).
[Crossref]

1998 (2)

K. Shimada, T. Sota, and K. Suzuki, “First-principles study on electronic and elastic properties of BN, AlN, and GaN,” J. Appl. Phys. 84, 4951–4958 (1998).
[Crossref]

S.-H. Park and S. L. Chuang, “Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers,” Appl. Phys. Lett. 72(24), 3103–3105 (1998).
[Crossref]

1997 (3)

A. Y. Polyakov, M. Shin, M. Skowronski, D. W. Greve, R. G. Wilson, A. V. Govorkov, and R. M. Desrosiers, “Growth of GaBN ternary solutions by organometallic vapor phase epitaxy,” J. Electron. Mater. 26, 237–242 (1997).
[Crossref]

N. Suzuki and N. Iizuka, “Feasibility study on ultrafast nonlinear optical properties of 1.55-μ m Intersubband transition in AlGaN/GaN quantum wells,” Jpn. J. Appl. Phys. 36(8A), L1006 (1997).
[Crossref]

F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III–V nitrides,” Phys. Rev. B 56, R10024 (1997).
[Crossref]

1996 (2)

A. Polian, M. Grimsditch, and I. Grzegory, “Elastic constants of gallium nitride,” J. Appl. Phys. 79, 3343–3344 (1996).
[Crossref]

G. Martin, A. Botchkarev, A. Rockett, and H. Morkoç, “Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy,” Appl. Phys. Lett. 68, 2541–2543 (1996).
[Crossref]

1995 (1)

M. Suzuki, T. Uenoyama, and A. Yanase, “First-principles calculations of effective-mass parameters of AlN and GaN,” Phys. Rev. B 52, 8132–8139 (1995).
[Crossref]

1994 (2)

V. W. L. Chin and T. L. Tansley, and Osotchan, “Electron mobilities in gallium, indium, and aluminum nitrides,” J. Appl. Phys. 75, 7365–7372 (1994).
[Crossref]

C. Sirtori, F. Capasso, J. Faist, and S. Scandolo, “Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells,” Phys. Rev. B 50(12), 8663–8674 (1994).
[Crossref]

1987 (2)

D. Ahn and S. L. Chuang, “Intersubband optical absorption in a quantum well with an applied electric field,” Phys. Rev. B 35(12), R4149–R4151 (1987)
[Crossref]

D. Ahn and S. L. Chuang, “Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric field,” IEEE J. Quantum Electron. 23(12), 2196–2204 (1987).
[Crossref]

1969 (1)

H. P. Maruska and J. J. Tietjen, “The preparation and properties of vapor-deposited single-crystalline GaN’,” Appl. Phys. Lett. 15, 327–328 (1969).
[Crossref]

Abid, M.

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, D. Troadec, A. Soltani, L. Largeau, O. Mauguin, and A. Ougazzaden, “Deep structural analysis of novel BGaN material layers grown by MOVPE,” J. Cryst. Growth 315, 288–291 (2011).
[Crossref]

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

Abounadi, A.

H. Akabli, A. Almaggoussi, A. Abounadi, A. Rajira, K. Berland, and T. G. Andersson, “Intersubband energies in Al1−y Iny N/Ga1−i Inx N heterostructures with lattice constant close to aGaN,” Superlat. Microstruct. 52(1), 70–77 (2012).
[Crossref]

Aggerstam, T.

X.Y. Liu, T. Aggerstam, P. Jänes, P. Holmström, S. Lourdudoss, L. Thylénc, and T.G. Andersson, “Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy,” J. Cryst. Growth 301, 457–460 (2007).
[Crossref]

Ahn, D.

S.-H. Park and D. Ahn, “Intersubband energies in strain-compensated InGaN/AlInN quantum well structures,” AIP Advances 6(1), 015014 (2006).
[Crossref]

S.-H. Park, Y.-T. Lee, and D. Ahn, “Spontaneous polarization and piezoelectric effects on intraband relaxation time in a wurtzite GaN/AlGaN quantum well,” Appl. Phys. A 71, 589–592 (2000).
[Crossref]

D. Ahn and S. L. Chuang, “Intersubband optical absorption in a quantum well with an applied electric field,” Phys. Rev. B 35(12), R4149–R4151 (1987)
[Crossref]

D. Ahn and S. L. Chuang, “Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric field,” IEEE J. Quantum Electron. 23(12), 2196–2204 (1987).
[Crossref]

Akabli, H.

H. Akabli, A. Almaggoussi, A. Abounadi, A. Rajira, K. Berland, and T. G. Andersson, “Intersubband energies in Al1−y Iny N/Ga1−i Inx N heterostructures with lattice constant close to aGaN,” Superlat. Microstruct. 52(1), 70–77 (2012).
[Crossref]

Almaggoussi, A.

H. Akabli, A. Almaggoussi, A. Abounadi, A. Rajira, K. Berland, and T. G. Andersson, “Intersubband energies in Al1−y Iny N/Ga1−i Inx N heterostructures with lattice constant close to aGaN,” Superlat. Microstruct. 52(1), 70–77 (2012).
[Crossref]

Alnot, M.

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

Andersson, T. G.

H. Akabli, A. Almaggoussi, A. Abounadi, A. Rajira, K. Berland, and T. G. Andersson, “Intersubband energies in Al1−y Iny N/Ga1−i Inx N heterostructures with lattice constant close to aGaN,” Superlat. Microstruct. 52(1), 70–77 (2012).
[Crossref]

Andersson, T.G.

X.Y. Liu, T. Aggerstam, P. Jänes, P. Holmström, S. Lourdudoss, L. Thylénc, and T.G. Andersson, “Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy,” J. Cryst. Growth 301, 457–460 (2007).
[Crossref]

Baldassarri Hoger von Hogersthal, G.

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[Crossref]

Shibata, M.

T. Honda, M. Shibata, M. Kurimoto, M. Tsubamoto, J. Yamamoto, and H. Kawanishi, “Band-gap energy and effective mass of BGaN,” Jpn. J. Appl. Phys. 39(4B), 2389 (2000).
[Crossref]

Shimada, K.

K. Shimada, T. Sota, and K. Suzuki, “First-principles study on electronic and elastic properties of BN, AlN, and GaN,” J. Appl. Phys. 84, 4951–4958 (1998).
[Crossref]

Shin, M.

A. Y. Polyakov, M. Shin, M. Skowronski, D. W. Greve, R. G. Wilson, A. V. Govorkov, and R. M. Desrosiers, “Growth of GaBN ternary solutions by organometallic vapor phase epitaxy,” J. Electron. Mater. 26, 237–242 (1997).
[Crossref]

Simeonov, D.

R. Butté, J.F. Carlin, E. Feltin, M. Gonschorek, S. Nicolay, G. Christmann, D. Simeonov, A. Castiglia, J. Dorsaz, H.J. Buehlmann, S. Christopoulos, G. Baldassarri Hoger von Hogersthal, A.J.D. Grundy, M. Mosca, C. Pinquier, M.A. Py, F. Demangeat, J. Frandon, P.G. Lagoudakis, J.J. Baumberg, and N. Grandjean, “Current status of AlInN layers lattice-matched to GaN for photonics and electronics,” J. Phys. D 40(20), 6328 (2007).
[Crossref]

Sirenko, A. A.

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

A. Ougazzaden, S. Gautier, T. Moudakir, Z. Djebbour, Z. Lochner, S. Choi, H. J. Kim, J.-H. Ryou, R. D. Dupuis, and A. A. Sirenko, “Bandgap bowing in BGaN thin films,” Appl. Phys. Lett. 93(8), 083118 (2008).
[Crossref]

A. Ougazzaden, S. Gautier, T. Moudakir, Z. Djebbour, Z. Lochner, S. Choi, H. J. Kim, J.-H. Ryou, R. D. Dupuis, and A. A. Sirenko, “Bandgap bowing in BGaN thin films,” Appl. Phys. Lett. 93, 083118 (2008).
[Crossref]

Sirtori, C.

C. Sirtori, F. Capasso, J. Faist, and S. Scandolo, “Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells,” Phys. Rev. B 50(12), 8663–8674 (1994).
[Crossref]

Skowronski, M.

A. Y. Polyakov, M. Shin, M. Skowronski, D. W. Greve, R. G. Wilson, A. V. Govorkov, and R. M. Desrosiers, “Growth of GaBN ternary solutions by organometallic vapor phase epitaxy,” J. Electron. Mater. 26, 237–242 (1997).
[Crossref]

Soltani, A.

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, D. Troadec, A. Soltani, L. Largeau, O. Mauguin, and A. Ougazzaden, “Deep structural analysis of novel BGaN material layers grown by MOVPE,” J. Cryst. Growth 315, 288–291 (2011).
[Crossref]

Soref, R. A.

V. D. Jovanović, Z. Ikonić, D. Indjin, P. Harrison, V. Milanovic, and R. A. Soref, “Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths,” J. Appl. Phys. 93(6), 3194–3197 (2003).
[Crossref]

Sota, T.

K. Shimada, T. Sota, and K. Suzuki, “First-principles study on electronic and elastic properties of BN, AlN, and GaN,” J. Appl. Phys. 84, 4951–4958 (1998).
[Crossref]

Stanionyte, S.

A. Kadys, J. Mickevičius, T. Malinauskas, J. Jurkevičius, M. Kolenda, S. Stanionytė, D. Dobrovolskas, and G. Tamulaitis, “Optical and structural properties of BGaN layers grown on different substrates,” J. Phys. D: Appl. Phys. 48, 465307 (2015).
[Crossref]

Stanionyté, S

A Kadys, J MickevicȈius, T Malinauskas, J JurkevicȈius, M Kolenda, S Stanionyté, D Dobrovolskas, and G Tamulaitis, “Optical and structural properties of BGaN layers grown on different substrates,” J. Phys. D: Appl. Phys. 48(46), 465307 (2015).
[Crossref]

Suzuki, K.

K. Shimada, T. Sota, and K. Suzuki, “First-principles study on electronic and elastic properties of BN, AlN, and GaN,” J. Appl. Phys. 84, 4951–4958 (1998).
[Crossref]

Suzuki, M.

M. Suzuki, T. Uenoyama, and A. Yanase, “First-principles calculations of effective-mass parameters of AlN and GaN,” Phys. Rev. B 52, 8132–8139 (1995).
[Crossref]

Suzuki, N.

N. Iizuka, K. Kaneko, and N. Suzuki, “Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy,” Appl. Phys. Lett. 81(10), 1803–1805 (2002).
[Crossref]

N. Suzuki and N. Iizuka, “Feasibility study on ultrafast nonlinear optical properties of 1.55-μ m Intersubband transition in AlGaN/GaN quantum wells,” Jpn. J. Appl. Phys. 36(8A), L1006 (1997).
[Crossref]

Tachibana, T.

K. Kishino, A. Kikuchi, H. Kanazawa, and T. Tachibana, “Intersubband transition in (GaN)m/(AIN)n superlattices in the wavelength range from 1.08 to 1.61 μ m,” Appl. Phys. Lett. 81(7), 1234–1236 (2002).
[Crossref]

Takano, T.

S. Watanabe, T. Takano, K. Jinen, J. Yamamoto, and H. Kawanishi, “Refractive indices of Bx Al1−x N (x = 0–0.012) and By Ga1−y N (y = 0–0.023) epitaxial layers in ultraviolet region,” Phys. Stat. Sol. (C) 0, 2691–2694 (2003)
[Crossref]

Tamulaitis, G

A Kadys, J MickevicȈius, T Malinauskas, J JurkevicȈius, M Kolenda, S Stanionyté, D Dobrovolskas, and G Tamulaitis, “Optical and structural properties of BGaN layers grown on different substrates,” J. Phys. D: Appl. Phys. 48(46), 465307 (2015).
[Crossref]

Tamulaitis, G.

A. Kadys, J. Mickevičius, T. Malinauskas, J. Jurkevičius, M. Kolenda, S. Stanionytė, D. Dobrovolskas, and G. Tamulaitis, “Optical and structural properties of BGaN layers grown on different substrates,” J. Phys. D: Appl. Phys. 48, 465307 (2015).
[Crossref]

Tansley, T. L.

V. W. L. Chin and T. L. Tansley, and Osotchan, “Electron mobilities in gallium, indium, and aluminum nitrides,” J. Appl. Phys. 75, 7365–7372 (1994).
[Crossref]

Thylénc, L.

X.Y. Liu, T. Aggerstam, P. Jänes, P. Holmström, S. Lourdudoss, L. Thylénc, and T.G. Andersson, “Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy,” J. Cryst. Growth 301, 457–460 (2007).
[Crossref]

Tietjen, J. J.

H. P. Maruska and J. J. Tietjen, “The preparation and properties of vapor-deposited single-crystalline GaN’,” Appl. Phys. Lett. 15, 327–328 (1969).
[Crossref]

Troadec, D.

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, D. Troadec, A. Soltani, L. Largeau, O. Mauguin, and A. Ougazzaden, “Deep structural analysis of novel BGaN material layers grown by MOVPE,” J. Cryst. Growth 315, 288–291 (2011).
[Crossref]

Tsubamoto, M.

T. Honda, M. Shibata, M. Kurimoto, M. Tsubamoto, J. Yamamoto, and H. Kawanishi, “Band-gap energy and effective mass of BGaN,” Jpn. J. Appl. Phys. 39(4B), 2389 (2000).
[Crossref]

Uenoyama, T.

M. Suzuki, T. Uenoyama, and A. Yanase, “First-principles calculations of effective-mass parameters of AlN and GaN,” Phys. Rev. B 52, 8132–8139 (1995).
[Crossref]

Van de Walle, C. G.

C. E. Dreyer, J. L. Lyons, A. Janotti, and C. G. Van de Walle, “Band alignments and polarization properties of BN polymorphs,” Appl. Phys. Express 7, 031001 (2014).
[Crossref]

Vanderbilt, D.

F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III–V nitrides,” Phys. Rev. B 56, R10024 (1997).
[Crossref]

Voss, P. L.

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

Vurgaftman, I.

I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94, 3675–3696 (2003).
[Crossref]

Wang, Z.G.

J. M. Li, Y. W. Lu, X.X. Han, J.J. Wu, X.L. Liu, Q.S. Zhu, and Z.G. Wang, “Theoretical investigation of intersubband transition in Alx Ga1−x N/GaN/Aly Ga1−y N step quantum well,” Physica E 28(4), 453–461 (2005).
[Crossref]

Watanabe, S.

S. Watanabe, T. Takano, K. Jinen, J. Yamamoto, and H. Kawanishi, “Refractive indices of Bx Al1−x N (x = 0–0.012) and By Ga1−y N (y = 0–0.023) epitaxial layers in ultraviolet region,” Phys. Stat. Sol. (C) 0, 2691–2694 (2003)
[Crossref]

Wilson, R. G.

A. Y. Polyakov, M. Shin, M. Skowronski, D. W. Greve, R. G. Wilson, A. V. Govorkov, and R. M. Desrosiers, “Growth of GaBN ternary solutions by organometallic vapor phase epitaxy,” J. Electron. Mater. 26, 237–242 (1997).
[Crossref]

Wu, J.J.

J. M. Li, Y. W. Lu, X.X. Han, J.J. Wu, X.L. Liu, Q.S. Zhu, and Z.G. Wang, “Theoretical investigation of intersubband transition in Alx Ga1−x N/GaN/Aly Ga1−y N step quantum well,” Physica E 28(4), 453–461 (2005).
[Crossref]

Yamamoto, J.

S. Watanabe, T. Takano, K. Jinen, J. Yamamoto, and H. Kawanishi, “Refractive indices of Bx Al1−x N (x = 0–0.012) and By Ga1−y N (y = 0–0.023) epitaxial layers in ultraviolet region,” Phys. Stat. Sol. (C) 0, 2691–2694 (2003)
[Crossref]

T. Honda, M. Shibata, M. Kurimoto, M. Tsubamoto, J. Yamamoto, and H. Kawanishi, “Band-gap energy and effective mass of BGaN,” Jpn. J. Appl. Phys. 39(4B), 2389 (2000).
[Crossref]

Yanase, A.

M. Suzuki, T. Uenoyama, and A. Yanase, “First-principles calculations of effective-mass parameters of AlN and GaN,” Phys. Rev. B 52, 8132–8139 (1995).
[Crossref]

Zhu, Q.S.

J. M. Li, Y. W. Lu, X.X. Han, J.J. Wu, X.L. Liu, Q.S. Zhu, and Z.G. Wang, “Theoretical investigation of intersubband transition in Alx Ga1−x N/GaN/Aly Ga1−y N step quantum well,” Physica E 28(4), 453–461 (2005).
[Crossref]

Zubrilov, A.

V. Bougrov, M. E. Levinshtein, S. L. Rumyantsev, and A. Zubrilov, in Properties of advanced semiconductor Mmterials GaN, AlN, InN, BN, SiC, SiGe, M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, eds. (Wiley, 2001), pp. 1–30.

AIP Advances (1)

S.-H. Park and D. Ahn, “Intersubband energies in strain-compensated InGaN/AlInN quantum well structures,” AIP Advances 6(1), 015014 (2006).
[Crossref]

Appl. Phys. A (1)

S.-H. Park, Y.-T. Lee, and D. Ahn, “Spontaneous polarization and piezoelectric effects on intraband relaxation time in a wurtzite GaN/AlGaN quantum well,” Appl. Phys. A 71, 589–592 (2000).
[Crossref]

Appl. Phys. Express (1)

C. E. Dreyer, J. L. Lyons, A. Janotti, and C. G. Van de Walle, “Band alignments and polarization properties of BN polymorphs,” Appl. Phys. Express 7, 031001 (2014).
[Crossref]

Appl. Phys. Lett. (9)

S.-H. Park and S. L. Chuang, “Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers,” Appl. Phys. Lett. 72(24), 3103–3105 (1998).
[Crossref]

H. P. Maruska and J. J. Tietjen, “The preparation and properties of vapor-deposited single-crystalline GaN’,” Appl. Phys. Lett. 15, 327–328 (1969).
[Crossref]

C. Gmachl, H. M. Ng, S.-N. G. Chu, and A. Y. Cho, “Intersubband absorption at λ ∼ 1.55μ m in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers,” Appl. Phys. Lett. 77(23), 3722–3724 (2000).
[Crossref]

C. Gmachl, H. M. Ng, and A. Y. Cho, “Intersubband absorption in degenerately doped GaN/Alx Ga1−x N coupled double quantum wells,” Appl. Phys. Lett. 79(11), 1590–1592 (2001).
[Crossref]

K. Kishino, A. Kikuchi, H. Kanazawa, and T. Tachibana, “Intersubband transition in (GaN)m/(AIN)n superlattices in the wavelength range from 1.08 to 1.61 μ m,” Appl. Phys. Lett. 81(7), 1234–1236 (2002).
[Crossref]

N. Iizuka, K. Kaneko, and N. Suzuki, “Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy,” Appl. Phys. Lett. 81(10), 1803–1805 (2002).
[Crossref]

A. Ougazzaden, S. Gautier, T. Moudakir, Z. Djebbour, Z. Lochner, S. Choi, H. J. Kim, J.-H. Ryou, R. D. Dupuis, and A. A. Sirenko, “Bandgap bowing in BGaN thin films,” Appl. Phys. Lett. 93(8), 083118 (2008).
[Crossref]

G. Martin, A. Botchkarev, A. Rockett, and H. Morkoç, “Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy,” Appl. Phys. Lett. 68, 2541–2543 (1996).
[Crossref]

A. Ougazzaden, S. Gautier, T. Moudakir, Z. Djebbour, Z. Lochner, S. Choi, H. J. Kim, J.-H. Ryou, R. D. Dupuis, and A. A. Sirenko, “Bandgap bowing in BGaN thin films,” Appl. Phys. Lett. 93, 083118 (2008).
[Crossref]

IEEE J. Quant. Electron. (1)

J. Radovanović, V. Milanović, Z. Ikonić, D. Indjin, V. Jovanović, and P. Harrison, “Optimal design of GaN-AlGaN Bragg-confined structures for intersubband absorption in the near-infrared spectral range,” IEEE J. Quant. Electron. 39(10), 1297–1304 (2003).
[Crossref]

IEEE J. Quantum Electron. (1)

D. Ahn and S. L. Chuang, “Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric field,” IEEE J. Quantum Electron. 23(12), 2196–2204 (1987).
[Crossref]

J. Appl. Phys. (5)

V. D. Jovanović, Z. Ikonić, D. Indjin, P. Harrison, V. Milanovic, and R. A. Soref, “Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths,” J. Appl. Phys. 93(6), 3194–3197 (2003).
[Crossref]

I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94, 3675–3696 (2003).
[Crossref]

K. Shimada, T. Sota, and K. Suzuki, “First-principles study on electronic and elastic properties of BN, AlN, and GaN,” J. Appl. Phys. 84, 4951–4958 (1998).
[Crossref]

V. W. L. Chin and T. L. Tansley, and Osotchan, “Electron mobilities in gallium, indium, and aluminum nitrides,” J. Appl. Phys. 75, 7365–7372 (1994).
[Crossref]

A. Polian, M. Grimsditch, and I. Grzegory, “Elastic constants of gallium nitride,” J. Appl. Phys. 79, 3343–3344 (1996).
[Crossref]

J. Cryst. Growth (3)

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, D. Troadec, A. Soltani, L. Largeau, O. Mauguin, and A. Ougazzaden, “Deep structural analysis of novel BGaN material layers grown by MOVPE,” J. Cryst. Growth 315, 288–291 (2011).
[Crossref]

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, and A. Ougazzaden, “Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content,” J. Cryst. Growth,  312(5), 641–644 (2010).
[Crossref]

X.Y. Liu, T. Aggerstam, P. Jänes, P. Holmström, S. Lourdudoss, L. Thylénc, and T.G. Andersson, “Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy,” J. Cryst. Growth 301, 457–460 (2007).
[Crossref]

J. Electron. Mater. (1)

A. Y. Polyakov, M. Shin, M. Skowronski, D. W. Greve, R. G. Wilson, A. V. Govorkov, and R. M. Desrosiers, “Growth of GaBN ternary solutions by organometallic vapor phase epitaxy,” J. Electron. Mater. 26, 237–242 (1997).
[Crossref]

J. Phys. D (1)

R. Butté, J.F. Carlin, E. Feltin, M. Gonschorek, S. Nicolay, G. Christmann, D. Simeonov, A. Castiglia, J. Dorsaz, H.J. Buehlmann, S. Christopoulos, G. Baldassarri Hoger von Hogersthal, A.J.D. Grundy, M. Mosca, C. Pinquier, M.A. Py, F. Demangeat, J. Frandon, P.G. Lagoudakis, J.J. Baumberg, and N. Grandjean, “Current status of AlInN layers lattice-matched to GaN for photonics and electronics,” J. Phys. D 40(20), 6328 (2007).
[Crossref]

J. Phys. D: Appl. Phys. (2)

A Kadys, J MickevicȈius, T Malinauskas, J JurkevicȈius, M Kolenda, S Stanionyté, D Dobrovolskas, and G Tamulaitis, “Optical and structural properties of BGaN layers grown on different substrates,” J. Phys. D: Appl. Phys. 48(46), 465307 (2015).
[Crossref]

A. Kadys, J. Mickevičius, T. Malinauskas, J. Jurkevičius, M. Kolenda, S. Stanionytė, D. Dobrovolskas, and G. Tamulaitis, “Optical and structural properties of BGaN layers grown on different substrates,” J. Phys. D: Appl. Phys. 48, 465307 (2015).
[Crossref]

Jpn J. Appl. Phys. (1)

R. Butté, E. Feltin, J. Dorsaz, G. Christmann, J.F. Carlin, N. Grandjean, and M. Ilegems, “Recent progress in the growth of highly reflective nitride-based distributed Bragg reflectors and their use in microcavities,” Jpn J. Appl. Phys. 44(10), 7207 (2005).
[Crossref]

Jpn. J. Appl. Phys. (2)

T. Honda, M. Shibata, M. Kurimoto, M. Tsubamoto, J. Yamamoto, and H. Kawanishi, “Band-gap energy and effective mass of BGaN,” Jpn. J. Appl. Phys. 39(4B), 2389 (2000).
[Crossref]

N. Suzuki and N. Iizuka, “Feasibility study on ultrafast nonlinear optical properties of 1.55-μ m Intersubband transition in AlGaN/GaN quantum wells,” Jpn. J. Appl. Phys. 36(8A), L1006 (1997).
[Crossref]

Phys. Rev. B (4)

D. Ahn and S. L. Chuang, “Intersubband optical absorption in a quantum well with an applied electric field,” Phys. Rev. B 35(12), R4149–R4151 (1987)
[Crossref]

F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III–V nitrides,” Phys. Rev. B 56, R10024 (1997).
[Crossref]

C. Sirtori, F. Capasso, J. Faist, and S. Scandolo, “Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells,” Phys. Rev. B 50(12), 8663–8674 (1994).
[Crossref]

M. Suzuki, T. Uenoyama, and A. Yanase, “First-principles calculations of effective-mass parameters of AlN and GaN,” Phys. Rev. B 52, 8132–8139 (1995).
[Crossref]

Phys. Stat. Sol. (C) (1)

S. Watanabe, T. Takano, K. Jinen, J. Yamamoto, and H. Kawanishi, “Refractive indices of Bx Al1−x N (x = 0–0.012) and By Ga1−y N (y = 0–0.023) epitaxial layers in ultraviolet region,” Phys. Stat. Sol. (C) 0, 2691–2694 (2003)
[Crossref]

Physica E (1)

J. M. Li, Y. W. Lu, X.X. Han, J.J. Wu, X.L. Liu, Q.S. Zhu, and Z.G. Wang, “Theoretical investigation of intersubband transition in Alx Ga1−x N/GaN/Aly Ga1−y N step quantum well,” Physica E 28(4), 453–461 (2005).
[Crossref]

Superlat. Microstruct. (1)

H. Akabli, A. Almaggoussi, A. Abounadi, A. Rajira, K. Berland, and T. G. Andersson, “Intersubband energies in Al1−y Iny N/Ga1−i Inx N heterostructures with lattice constant close to aGaN,” Superlat. Microstruct. 52(1), 70–77 (2012).
[Crossref]

Other (4)

M. Helm, Intersubband Transitions in Quantum Wells: Physics and Device Applications I, H.C. Liu and F. Capasso, eds., (Academic, 2000).

S. L. Chuang, Physics of Optoelectronic Devices (Wiley, 1995).

O. Madelung, Semiconductors: Basic Data 2nd revised ed (Springer, 1996).

V. Bougrov, M. E. Levinshtein, S. L. Rumyantsev, and A. Zubrilov, in Properties of advanced semiconductor Mmterials GaN, AlN, InN, BN, SiC, SiGe, M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, eds. (Wiley, 2001), pp. 1–30.

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Figures (4)

Fig. 1
Fig. 1 (a) Strain as the function of B content for B x Ga1− x N/AlN QW structure grown on AlN substrate and intersubband transition wavelengths λ21 for (b) GaN/AlN and (c) lattice-matched B x Ga1− x N/AlN (x=0.115) QW structures.
Fig. 2
Fig. 2 (a) Internal field as a function of B content for B x Ga1− x N/AlN QW structures grown on AlN substrate and potential profiles and wave functions for the first two subbands (C1 and C2) in the conduction band of (b) GaN/AlN and (c) lattice-matched B x Ga1− x N/AlN (x=0.115) QW structure.
Fig. 3
Fig. 3 (a) Intersubband dipole moment between the first two subbands in the conduction band and (b) quasi-Fermi level separation ΔEfc as a function of carrier density for lattice-matched B x Ga1− x N/AlN (x=0.115) and GaN/AlN QW structures with the intersubband transition wavelength of 1.55 μm. The inset shows a square of the product of the wave-functions as a function of the position (z) for the first two subbands ( Ψ c 1 and Ψ c 2 ) in the conduction band.
Fig. 4
Fig. 4 Intersubband absorption spectra as a function of the sheet carrier density for lattice-matched B x Ga1− x N/AlN (x=0.115) and GaN/AlN QW structures with the intersubband transition wavelength of 1.55 μm. The solid lines in Fig. 4(b) show results for the case with the bowing parameter of C=4.0 eV.

Tables (1)

Tables Icon

Table 1 Physical parameters for BN, GaN, and AlN materials used in the calculation.

Equations (15)

Equations on this page are rendered with MathJax. Learn more.

2 2 d d z ( 1 m ( z , E ) d d z Ψ ) + V c ( z ) Ψ = E Ψ ,
V e x ( z ) = ( 9 π 4 ) 1 / 3 2 π r s [ 1 + B A r s ln ( 1 + A r s ) ] e 2 8 π ϵ o ϵ a * ,
V ( z ) = { | e | F z b ( z z 1 ) + Δ E c , z z 1 | e | F z w ( z z 1 ) , z 1 < z z 2 | e | F z b ( z z 2 ) + Δ E c , z 2 < z
F z w = L b ϵ b L w + ϵ w L b ( P b P w ) F z b = L w ϵ b L w + ϵ w L b ( P b P w )
m ( z , E ) = m e ( z ) ( 1 + E V c ( z ) E g ( z ) ) ,
V c ( z ) = V c w ( z ) | e | ϕ ( z ) ,
d d z ( ϵ ( z ) d d z ) ϕ ( z ) = e [ N D + ( z ) + n ( z ) ] .
n ( z ) = k T m e ( z ) π 2 l | f l ( z ) | 2 ln ( 1 + e [ E f c E c l ( 0 ) ] / k T )
L / 2 L / 2 ρ ( z ) d z = 0 ,
ϕ ( z ) = L / 2 z E ( z ) d z ,
E ( z ) = L / 2 z 1 ϵ ( z ) ρ ( z ) d z .
( [ H ( E i ) ] E i [ I ] ) f i = λ f i .
α ( ω ) = ( ω n r c ϵ o ) | μ 21 | 2 ( Γ / 2 ) ( E 2 E 1 ω ) 2 + ( Γ / 2 ) 2 ( N 2 N 1 ) ,
μ 21 = f 2 | e z | f 1 = f 2 * ( z ) e z f 1 ( z ) d z
N i = k T m e π 2 L w ln ( 1 + e [ E f c E i ] / k T ) .

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