Abstract

We report InAs/InGaAs quantum dot (QD) waveguide photodetectors (PD) monolithically grown on silicon substrates. A high-crystalline quality GaAs-on-Si template was achieved by aspect ratio trapping together with the combined effects of cyclic thermal annealing and strain-balancing layer stacks. An ultra-low dark current of 0.8 nA and an internal responsivity of 0.9 A/W were measured in the O band. We also report, to the best of our knowledge, the first characterization of high-speed performance and the first demonstration of the on-chip photodetection for this QD-on-silicon system. The monolithically integrated waveguide PD shares the same platform as the previously demonstrated micro-ring lasers and can thus be integrated with laser sources for power monitors or amplifiers for pre-amplified receivers.

© 2017 Optical Society of America

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2017 (8)

Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
[Crossref]

P. Pintus, D. Huang, C. Zhang, Y. Shoji, T. Mizumoto, and J. E. Bowers, “Microring-based optical isolator and circulator with integrated electromagnet for silicon photonics,” J. Lightwave Technol. 35(8), 1429–1437 (2017).
[Crossref]

B. Shi, S. Zhu, Q. Li, C. W. Tang, Y. Wan, E. L. Hu, and K. M. Lau, “1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si,” Appl. Phys. Lett. 110(12), 121109 (2017).
[Crossref]

L. Chang, M. H. P. Pfeiffer, N. Volet, M. Zervas, J. D. Peters, C. L. Manganelli, E. J. Stanton, Y. Li, T. J. Kippenberg, and J. E. Bowers, “Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon,” Opt. Lett. 42(4), 803–806 (2017).
[Crossref] [PubMed]

J. Norman, M. J. Kennedy, J. Selvidge, Q. Li, Y. Wan, A. Y. Liu, P. G. Callahan, M. P. Echlin, T. M. Pollock, K. M. Lau, A. C. Gossard, and J. E. Bowers, “Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si,” Opt. Express 25(4), 3927–3934 (2017).
[Crossref] [PubMed]

A. Y. Liu, J. Peters, X. Huang, D. Jung, J. Norman, M. L. Lee, A. C. Gossard, and J. E. Bowers, “Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si,” Opt. Lett. 42(2), 338–341 (2017).
[Crossref] [PubMed]

Y. Wan, J. Norman, Q. Li, M. J. Kennedy, D. Liang, C. Zhang, D. Huang, Z. Zhang, A. Y. Liu, A. Torres, D. Jung, A. C. Gossard, E. L. Hu, K. M. Lau, and J. E. Bowers, “1.3 µm submilliamp threshold quantum dot micro-lasers on Si,” Optica 4(8), 940 (2017).
[Crossref]

Z. Zhang, R. Wu, Y. Wang, C. Zhang, E. J. Stanton, C. L. Schow, K. Cheng, and J. E. Bowers, “Compact modeling for silicon photonic heterogeneously integrated circuits,” J. Lightwave Technol. 35(14), 2973–2980 (2017).
[Crossref]

2016 (9)

Q. Li, Y. Wan, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon,” Opt. Express 24(18), 21038–21045 (2016).
[Crossref] [PubMed]

J. Wu, Q. Jiang, S. Chen, M. Tang, Y. I. Mazur, Y. Maidaniuk, M. Benamara, M. P. Semtsiv, W. T. Masselink, K. A. Sablon, G. J. Salamo, and H. Liu, “Monolithically integrated InAs/GaAs quantum dot mid-infrared photodetectors on silicon substrates,” ACS Photonics 3(5), 749–753 (2016).
[Crossref]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Y. Wan, Q. Li, A. Y. Liu, W. W. Chow, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates,” Appl. Phys. Lett. 108(22), 221101 (2016).
[Crossref]

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III-V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

D. Liang, X. Huang, G. Kurczveil, M. Fiorentino, and R. G. Beausoleil, “Integrated finely tunable microring laser on silicon,” Nat. Photonics 10(11), 719–722 (2016).
[Crossref]

C. Zhang, S. Zhang, J. D. Peters, and J. E. Bowers, “8× 8× 40 Gbps fully integrated silicon photonic network on chip,” Optica 3(7), 785–786 (2016).
[Crossref]

B. Song, C. Stagarescu, S. Ristic, A. Behfar, and J. Klamkin, “3D integrated hybrid silicon laser,” Opt. Express 24(10), 10435–10444 (2016).
[Crossref] [PubMed]

Y. Han, Q. Li, S. Chang, W. Hsu, and K. M. Lau, “Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon,” Appl. Phys. Lett. 108(24), 242105 (2016).
[Crossref]

2015 (2)

Q. Li, K. W. Ng, and K. M. Lau, “Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon,” Appl. Phys. Lett. 106(7), 072105 (2015).
[Crossref]

Z. Zhou, B. Yin, and J. Michel, “On-chip light sources for silicon photonics,” Light Sci. Appl. 4(11), e358 (2015).
[Crossref]

2014 (2)

A. Y. Liu, C. Zhang, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, “MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon,” J. Vac. Sci. Technol. B 32(2), 02C108 (2014).
[Crossref]

Y. Geng, S. Feng, A. W. O. Poon, and K. M. Lau, “High-Speed InGaAs Photodetectors by Selective-Area MOCVD Toward Optoelectronic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 20(6), 36–42 (2014).
[Crossref]

2010 (1)

J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]

2009 (1)

2007 (3)

2003 (1)

2002 (1)

W. H. Chang, W. Y. Chen, T. M. Hsu, N. T. Yeh, and J. I. Chyi, “Hole emission processes in InAs/GaAs self-assembled quantum dots,” Phys. Rev. B 66(19), 195337 (2002).
[Crossref]

2001 (1)

W. H. Chang, W. Y. Chen, M. C. Cheng, C. Y. Lai, T. M. Hsu, N.-T. Yeh, and J.-I. Chyi, “Charging of embedded InAs self-assembled quantum dots by space-charge techniques,” Phys. Rev. B 64(12), 125315 (2001).
[Crossref]

1996 (1)

K. S. Giboney, M. J. W. Rodwell, and J. E. Bowers, “Travelling-Wave Photodetector Design and Measurements,” IEEE J. Sel. Top. Quantum Electron. 2(3), 622–629 (1996).
[Crossref]

1995 (1)

Y. Wey, K. Giboney, J. Bowers, M. Rodwell, P. Silvestre, P. Thiagarajan, and G. Robinson, “110-GHz GalnAslInP Double Heterostructure p-i-n Photo detectors,” J. Lightwave Technol. 13(7), 1490–1499 (1995).
[Crossref]

1987 (1)

J. E. Bowers and C. A. Burrus, “Ultrawide-band long-wavelength pin photodetectors,” J. Lightwave Technol. 5(10), 1339–1350 (1987).
[Crossref]

1986 (1)

J. E. Bowers and C. A. Burrus, “High-speed zero-bias waveguide photodetectors,” Electron. Lett. 22(17), 905–906 (1986).
[Crossref]

1985 (1)

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric Field Dependence of Optical Absorption near the Band gap of Quantum-Well Structures,” Phys. Rev. B Condens. Matter 32(2), 1043–1060 (1985).
[Crossref] [PubMed]

Abbasi, A.

Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
[Crossref]

Baets, R.

Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
[Crossref]

Bauwelinck, J.

Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
[Crossref]

Beausoleil, R. G.

D. Liang, X. Huang, G. Kurczveil, M. Fiorentino, and R. G. Beausoleil, “Integrated finely tunable microring laser on silicon,” Nat. Photonics 10(11), 719–722 (2016).
[Crossref]

Behfar, A.

Benamara, M.

J. Wu, Q. Jiang, S. Chen, M. Tang, Y. I. Mazur, Y. Maidaniuk, M. Benamara, M. P. Semtsiv, W. T. Masselink, K. A. Sablon, G. J. Salamo, and H. Liu, “Monolithically integrated InAs/GaAs quantum dot mid-infrared photodetectors on silicon substrates,” ACS Photonics 3(5), 749–753 (2016).
[Crossref]

Bovington, J. T.

J. E. Bowers, J. T. Bovington, A. Y. Liu, and A. C. Gossard, “A path to 300 mm hybrid silicon photonic integrated circuits,” in Optical Fiber Communication Conference (2014), Th1C.1.
[Crossref]

Bowers, J.

Y. Wey, K. Giboney, J. Bowers, M. Rodwell, P. Silvestre, P. Thiagarajan, and G. Robinson, “110-GHz GalnAslInP Double Heterostructure p-i-n Photo detectors,” J. Lightwave Technol. 13(7), 1490–1499 (1995).
[Crossref]

Bowers, J. E.

A. Y. Liu, J. Peters, X. Huang, D. Jung, J. Norman, M. L. Lee, A. C. Gossard, and J. E. Bowers, “Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si,” Opt. Lett. 42(2), 338–341 (2017).
[Crossref] [PubMed]

L. Chang, M. H. P. Pfeiffer, N. Volet, M. Zervas, J. D. Peters, C. L. Manganelli, E. J. Stanton, Y. Li, T. J. Kippenberg, and J. E. Bowers, “Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon,” Opt. Lett. 42(4), 803–806 (2017).
[Crossref] [PubMed]

J. Norman, M. J. Kennedy, J. Selvidge, Q. Li, Y. Wan, A. Y. Liu, P. G. Callahan, M. P. Echlin, T. M. Pollock, K. M. Lau, A. C. Gossard, and J. E. Bowers, “Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si,” Opt. Express 25(4), 3927–3934 (2017).
[Crossref] [PubMed]

P. Pintus, D. Huang, C. Zhang, Y. Shoji, T. Mizumoto, and J. E. Bowers, “Microring-based optical isolator and circulator with integrated electromagnet for silicon photonics,” J. Lightwave Technol. 35(8), 1429–1437 (2017).
[Crossref]

Y. Wan, J. Norman, Q. Li, M. J. Kennedy, D. Liang, C. Zhang, D. Huang, Z. Zhang, A. Y. Liu, A. Torres, D. Jung, A. C. Gossard, E. L. Hu, K. M. Lau, and J. E. Bowers, “1.3 µm submilliamp threshold quantum dot micro-lasers on Si,” Optica 4(8), 940 (2017).
[Crossref]

Z. Zhang, R. Wu, Y. Wang, C. Zhang, E. J. Stanton, C. L. Schow, K. Cheng, and J. E. Bowers, “Compact modeling for silicon photonic heterogeneously integrated circuits,” J. Lightwave Technol. 35(14), 2973–2980 (2017).
[Crossref]

C. Zhang, S. Zhang, J. D. Peters, and J. E. Bowers, “8× 8× 40 Gbps fully integrated silicon photonic network on chip,” Optica 3(7), 785–786 (2016).
[Crossref]

Q. Li, Y. Wan, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon,” Opt. Express 24(18), 21038–21045 (2016).
[Crossref] [PubMed]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Y. Wan, Q. Li, A. Y. Liu, W. W. Chow, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates,” Appl. Phys. Lett. 108(22), 221101 (2016).
[Crossref]

A. Y. Liu, C. Zhang, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, “MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon,” J. Vac. Sci. Technol. B 32(2), 02C108 (2014).
[Crossref]

H. Park, A. W. Fang, R. Jones, O. Cohen, O. Raday, M. N. Sysak, M. J. Paniccia, and J. E. Bowers, “A hybrid AlGaInAs-silicon evanescent waveguide photodetector,” Opt. Express 15(10), 6044–6052 (2007).
[Crossref] [PubMed]

K. S. Giboney, M. J. W. Rodwell, and J. E. Bowers, “Travelling-Wave Photodetector Design and Measurements,” IEEE J. Sel. Top. Quantum Electron. 2(3), 622–629 (1996).
[Crossref]

J. E. Bowers and C. A. Burrus, “Ultrawide-band long-wavelength pin photodetectors,” J. Lightwave Technol. 5(10), 1339–1350 (1987).
[Crossref]

J. E. Bowers and C. A. Burrus, “High-speed zero-bias waveguide photodetectors,” Electron. Lett. 22(17), 905–906 (1986).
[Crossref]

D. Jung, J. Norman, M. J. Kennedy, C. Shang, B. Shin, Y. Wan, A. C. Gossard, and J. E. Bowers, “High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si,” Appl. Phys. Lett.under review.

J. E. Bowers, J. T. Bovington, A. Y. Liu, and A. C. Gossard, “A path to 300 mm hybrid silicon photonic integrated circuits,” in Optical Fiber Communication Conference (2014), Th1C.1.
[Crossref]

Burrus, C. A.

J. E. Bowers and C. A. Burrus, “Ultrawide-band long-wavelength pin photodetectors,” J. Lightwave Technol. 5(10), 1339–1350 (1987).
[Crossref]

J. E. Bowers and C. A. Burrus, “High-speed zero-bias waveguide photodetectors,” Electron. Lett. 22(17), 905–906 (1986).
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D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric Field Dependence of Optical Absorption near the Band gap of Quantum-Well Structures,” Phys. Rev. B Condens. Matter 32(2), 1043–1060 (1985).
[Crossref] [PubMed]

Callahan, P. G.

Cassan, E.

Chang, L.

Chang, S.

Y. Han, Q. Li, S. Chang, W. Hsu, and K. M. Lau, “Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon,” Appl. Phys. Lett. 108(24), 242105 (2016).
[Crossref]

Chang, W. H.

W. H. Chang, W. Y. Chen, T. M. Hsu, N. T. Yeh, and J. I. Chyi, “Hole emission processes in InAs/GaAs self-assembled quantum dots,” Phys. Rev. B 66(19), 195337 (2002).
[Crossref]

W. H. Chang, W. Y. Chen, M. C. Cheng, C. Y. Lai, T. M. Hsu, N.-T. Yeh, and J.-I. Chyi, “Charging of embedded InAs self-assembled quantum dots by space-charge techniques,” Phys. Rev. B 64(12), 125315 (2001).
[Crossref]

Chemla, D. S.

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric Field Dependence of Optical Absorption near the Band gap of Quantum-Well Structures,” Phys. Rev. B Condens. Matter 32(2), 1043–1060 (1985).
[Crossref] [PubMed]

Chen, L.

Chen, S.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III-V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

J. Wu, Q. Jiang, S. Chen, M. Tang, Y. I. Mazur, Y. Maidaniuk, M. Benamara, M. P. Semtsiv, W. T. Masselink, K. A. Sablon, G. J. Salamo, and H. Liu, “Monolithically integrated InAs/GaAs quantum dot mid-infrared photodetectors on silicon substrates,” ACS Photonics 3(5), 749–753 (2016).
[Crossref]

Chen, W. Y.

W. H. Chang, W. Y. Chen, T. M. Hsu, N. T. Yeh, and J. I. Chyi, “Hole emission processes in InAs/GaAs self-assembled quantum dots,” Phys. Rev. B 66(19), 195337 (2002).
[Crossref]

W. H. Chang, W. Y. Chen, M. C. Cheng, C. Y. Lai, T. M. Hsu, N.-T. Yeh, and J.-I. Chyi, “Charging of embedded InAs self-assembled quantum dots by space-charge techniques,” Phys. Rev. B 64(12), 125315 (2001).
[Crossref]

Cheng, K.

Cheng, M. C.

W. H. Chang, W. Y. Chen, M. C. Cheng, C. Y. Lai, T. M. Hsu, N.-T. Yeh, and J.-I. Chyi, “Charging of embedded InAs self-assembled quantum dots by space-charge techniques,” Phys. Rev. B 64(12), 125315 (2001).
[Crossref]

Chow, W. W.

Y. Wan, Q. Li, A. Y. Liu, W. W. Chow, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates,” Appl. Phys. Lett. 108(22), 221101 (2016).
[Crossref]

Chyi, J. I.

W. H. Chang, W. Y. Chen, T. M. Hsu, N. T. Yeh, and J. I. Chyi, “Hole emission processes in InAs/GaAs self-assembled quantum dots,” Phys. Rev. B 66(19), 195337 (2002).
[Crossref]

Chyi, J.-I.

W. H. Chang, W. Y. Chen, M. C. Cheng, C. Y. Lai, T. M. Hsu, N.-T. Yeh, and J.-I. Chyi, “Charging of embedded InAs self-assembled quantum dots by space-charge techniques,” Phys. Rev. B 64(12), 125315 (2001).
[Crossref]

Cohen, O.

Crozat, P.

Damen, T. C.

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric Field Dependence of Optical Absorption near the Band gap of Quantum-Well Structures,” Phys. Rev. B Condens. Matter 32(2), 1043–1060 (1985).
[Crossref] [PubMed]

Damlencourt, J. F.

Dave, U.

Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
[Crossref]

De Groote, A.

Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
[Crossref]

Echlin, M. P.

El Melhaoui, L.

Elliott, S. N.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III-V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

Fang, A. W.

Fastenau, J. M.

A. Y. Liu, C. Zhang, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, “MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon,” J. Vac. Sci. Technol. B 32(2), 02C108 (2014).
[Crossref]

Fédéli, J. M.

Feng, S.

Y. Geng, S. Feng, A. W. O. Poon, and K. M. Lau, “High-Speed InGaAs Photodetectors by Selective-Area MOCVD Toward Optoelectronic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 20(6), 36–42 (2014).
[Crossref]

Fiorentino, M.

D. Liang, X. Huang, G. Kurczveil, M. Fiorentino, and R. G. Beausoleil, “Integrated finely tunable microring laser on silicon,” Nat. Photonics 10(11), 719–722 (2016).
[Crossref]

Geng, Y.

Y. Geng, S. Feng, A. W. O. Poon, and K. M. Lau, “High-Speed InGaAs Photodetectors by Selective-Area MOCVD Toward Optoelectronic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 20(6), 36–42 (2014).
[Crossref]

Giboney, K.

Y. Wey, K. Giboney, J. Bowers, M. Rodwell, P. Silvestre, P. Thiagarajan, and G. Robinson, “110-GHz GalnAslInP Double Heterostructure p-i-n Photo detectors,” J. Lightwave Technol. 13(7), 1490–1499 (1995).
[Crossref]

Giboney, K. S.

K. S. Giboney, M. J. W. Rodwell, and J. E. Bowers, “Travelling-Wave Photodetector Design and Measurements,” IEEE J. Sel. Top. Quantum Electron. 2(3), 622–629 (1996).
[Crossref]

Gossard, A. C.

A. Y. Liu, J. Peters, X. Huang, D. Jung, J. Norman, M. L. Lee, A. C. Gossard, and J. E. Bowers, “Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si,” Opt. Lett. 42(2), 338–341 (2017).
[Crossref] [PubMed]

Y. Wan, J. Norman, Q. Li, M. J. Kennedy, D. Liang, C. Zhang, D. Huang, Z. Zhang, A. Y. Liu, A. Torres, D. Jung, A. C. Gossard, E. L. Hu, K. M. Lau, and J. E. Bowers, “1.3 µm submilliamp threshold quantum dot micro-lasers on Si,” Optica 4(8), 940 (2017).
[Crossref]

J. Norman, M. J. Kennedy, J. Selvidge, Q. Li, Y. Wan, A. Y. Liu, P. G. Callahan, M. P. Echlin, T. M. Pollock, K. M. Lau, A. C. Gossard, and J. E. Bowers, “Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si,” Opt. Express 25(4), 3927–3934 (2017).
[Crossref] [PubMed]

Q. Li, Y. Wan, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon,” Opt. Express 24(18), 21038–21045 (2016).
[Crossref] [PubMed]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Y. Wan, Q. Li, A. Y. Liu, W. W. Chow, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates,” Appl. Phys. Lett. 108(22), 221101 (2016).
[Crossref]

A. Y. Liu, C. Zhang, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, “MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon,” J. Vac. Sci. Technol. B 32(2), 02C108 (2014).
[Crossref]

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric Field Dependence of Optical Absorption near the Band gap of Quantum-Well Structures,” Phys. Rev. B Condens. Matter 32(2), 1043–1060 (1985).
[Crossref] [PubMed]

D. Jung, J. Norman, M. J. Kennedy, C. Shang, B. Shin, Y. Wan, A. C. Gossard, and J. E. Bowers, “High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si,” Appl. Phys. Lett.under review.

J. E. Bowers, J. T. Bovington, A. Y. Liu, and A. C. Gossard, “A path to 300 mm hybrid silicon photonic integrated circuits,” in Optical Fiber Communication Conference (2014), Th1C.1.
[Crossref]

Han, Y.

Y. Han, Q. Li, S. Chang, W. Hsu, and K. M. Lau, “Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon,” Appl. Phys. Lett. 108(24), 242105 (2016).
[Crossref]

Hens, Z.

Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
[Crossref]

Hsu, T. M.

W. H. Chang, W. Y. Chen, T. M. Hsu, N. T. Yeh, and J. I. Chyi, “Hole emission processes in InAs/GaAs self-assembled quantum dots,” Phys. Rev. B 66(19), 195337 (2002).
[Crossref]

W. H. Chang, W. Y. Chen, M. C. Cheng, C. Y. Lai, T. M. Hsu, N.-T. Yeh, and J.-I. Chyi, “Charging of embedded InAs self-assembled quantum dots by space-charge techniques,” Phys. Rev. B 64(12), 125315 (2001).
[Crossref]

Hsu, W.

Y. Han, Q. Li, S. Chang, W. Hsu, and K. M. Lau, “Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon,” Appl. Phys. Lett. 108(24), 242105 (2016).
[Crossref]

Hu, E. L.

Huang, D.

Huang, X.

Jiang, Q.

J. Wu, Q. Jiang, S. Chen, M. Tang, Y. I. Mazur, Y. Maidaniuk, M. Benamara, M. P. Semtsiv, W. T. Masselink, K. A. Sablon, G. J. Salamo, and H. Liu, “Monolithically integrated InAs/GaAs quantum dot mid-infrared photodetectors on silicon substrates,” ACS Photonics 3(5), 749–753 (2016).
[Crossref]

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III-V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

Jones, R.

Jongthammanurak, S.

Jung, D.

Kennedy, M. J.

Kimerling, L. C.

Kippenberg, T. J.

Kitayama, K. I.

Klamkin, J.

Kumari, S.

Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
[Crossref]

Kunert, B.

Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
[Crossref]

Kurczveil, G.

D. Liang, X. Huang, G. Kurczveil, M. Fiorentino, and R. G. Beausoleil, “Integrated finely tunable microring laser on silicon,” Nat. Photonics 10(11), 719–722 (2016).
[Crossref]

Kuri, T.

Kuyken, B.

Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
[Crossref]

Lai, C. Y.

W. H. Chang, W. Y. Chen, M. C. Cheng, C. Y. Lai, T. M. Hsu, N.-T. Yeh, and J.-I. Chyi, “Charging of embedded InAs self-assembled quantum dots by space-charge techniques,” Phys. Rev. B 64(12), 125315 (2001).
[Crossref]

Lau, K. M.

B. Shi, S. Zhu, Q. Li, C. W. Tang, Y. Wan, E. L. Hu, and K. M. Lau, “1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si,” Appl. Phys. Lett. 110(12), 121109 (2017).
[Crossref]

J. Norman, M. J. Kennedy, J. Selvidge, Q. Li, Y. Wan, A. Y. Liu, P. G. Callahan, M. P. Echlin, T. M. Pollock, K. M. Lau, A. C. Gossard, and J. E. Bowers, “Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si,” Opt. Express 25(4), 3927–3934 (2017).
[Crossref] [PubMed]

Y. Wan, J. Norman, Q. Li, M. J. Kennedy, D. Liang, C. Zhang, D. Huang, Z. Zhang, A. Y. Liu, A. Torres, D. Jung, A. C. Gossard, E. L. Hu, K. M. Lau, and J. E. Bowers, “1.3 µm submilliamp threshold quantum dot micro-lasers on Si,” Optica 4(8), 940 (2017).
[Crossref]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Q. Li, Y. Wan, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon,” Opt. Express 24(18), 21038–21045 (2016).
[Crossref] [PubMed]

Y. Han, Q. Li, S. Chang, W. Hsu, and K. M. Lau, “Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon,” Appl. Phys. Lett. 108(24), 242105 (2016).
[Crossref]

Y. Wan, Q. Li, A. Y. Liu, W. W. Chow, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates,” Appl. Phys. Lett. 108(22), 221101 (2016).
[Crossref]

Q. Li, K. W. Ng, and K. M. Lau, “Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon,” Appl. Phys. Lett. 106(7), 072105 (2015).
[Crossref]

Y. Geng, S. Feng, A. W. O. Poon, and K. M. Lau, “High-Speed InGaAs Photodetectors by Selective-Area MOCVD Toward Optoelectronic Integrated Circuits,” IEEE J. Sel. Top. Quantum Electron. 20(6), 36–42 (2014).
[Crossref]

Laval, S.

Le Roux, X.

Lee, M. L.

Li, Q.

J. Norman, M. J. Kennedy, J. Selvidge, Q. Li, Y. Wan, A. Y. Liu, P. G. Callahan, M. P. Echlin, T. M. Pollock, K. M. Lau, A. C. Gossard, and J. E. Bowers, “Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si,” Opt. Express 25(4), 3927–3934 (2017).
[Crossref] [PubMed]

Y. Wan, J. Norman, Q. Li, M. J. Kennedy, D. Liang, C. Zhang, D. Huang, Z. Zhang, A. Y. Liu, A. Torres, D. Jung, A. C. Gossard, E. L. Hu, K. M. Lau, and J. E. Bowers, “1.3 µm submilliamp threshold quantum dot micro-lasers on Si,” Optica 4(8), 940 (2017).
[Crossref]

B. Shi, S. Zhu, Q. Li, C. W. Tang, Y. Wan, E. L. Hu, and K. M. Lau, “1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si,” Appl. Phys. Lett. 110(12), 121109 (2017).
[Crossref]

Y. Han, Q. Li, S. Chang, W. Hsu, and K. M. Lau, “Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon,” Appl. Phys. Lett. 108(24), 242105 (2016).
[Crossref]

Y. Wan, Q. Li, A. Y. Liu, W. W. Chow, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates,” Appl. Phys. Lett. 108(22), 221101 (2016).
[Crossref]

Q. Li, Y. Wan, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon,” Opt. Express 24(18), 21038–21045 (2016).
[Crossref] [PubMed]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Q. Li, K. W. Ng, and K. M. Lau, “Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon,” Appl. Phys. Lett. 106(7), 072105 (2015).
[Crossref]

Li, W.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III-V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

Li, Y.

Liang, D.

Lipson, M.

Liu, A. W. K.

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Y. Wan, J. Norman, Q. Li, M. J. Kennedy, D. Liang, C. Zhang, D. Huang, Z. Zhang, A. Y. Liu, A. Torres, D. Jung, A. C. Gossard, E. L. Hu, K. M. Lau, and J. E. Bowers, “1.3 µm submilliamp threshold quantum dot micro-lasers on Si,” Optica 4(8), 940 (2017).
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Q. Li, Y. Wan, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon,” Opt. Express 24(18), 21038–21045 (2016).
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Morthier, G.

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J. Wu, Q. Jiang, S. Chen, M. Tang, Y. I. Mazur, Y. Maidaniuk, M. Benamara, M. P. Semtsiv, W. T. Masselink, K. A. Sablon, G. J. Salamo, and H. Liu, “Monolithically integrated InAs/GaAs quantum dot mid-infrared photodetectors on silicon substrates,” ACS Photonics 3(5), 749–753 (2016).
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Seeds, A. J.

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Semtsiv, M. P.

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Shi, B.

B. Shi, S. Zhu, Q. Li, C. W. Tang, Y. Wan, E. L. Hu, and K. M. Lau, “1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si,” Appl. Phys. Lett. 110(12), 121109 (2017).
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D. Jung, J. Norman, M. J. Kennedy, C. Shang, B. Shin, Y. Wan, A. C. Gossard, and J. E. Bowers, “High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si,” Appl. Phys. Lett.under review.

Shoji, Y.

Shutts, S.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III-V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
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S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III-V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
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A. Y. Liu, C. Zhang, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. K. Liu, A. C. Gossard, and J. E. Bowers, “MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon,” J. Vac. Sci. Technol. B 32(2), 02C108 (2014).
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S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III-V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
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B. Shi, S. Zhu, Q. Li, C. W. Tang, Y. Wan, E. L. Hu, and K. M. Lau, “1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si,” Appl. Phys. Lett. 110(12), 121109 (2017).
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J. Wu, Q. Jiang, S. Chen, M. Tang, Y. I. Mazur, Y. Maidaniuk, M. Benamara, M. P. Semtsiv, W. T. Masselink, K. A. Sablon, G. J. Salamo, and H. Liu, “Monolithically integrated InAs/GaAs quantum dot mid-infrared photodetectors on silicon substrates,” ACS Photonics 3(5), 749–753 (2016).
[Crossref]

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III-V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
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Y. Wey, K. Giboney, J. Bowers, M. Rodwell, P. Silvestre, P. Thiagarajan, and G. Robinson, “110-GHz GalnAslInP Double Heterostructure p-i-n Photo detectors,” J. Lightwave Technol. 13(7), 1490–1499 (1995).
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Van Campenhout, J.

Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
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Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
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Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
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Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
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Vivien, L.

Volet, N.

Wada, K.

Wan, Y.

B. Shi, S. Zhu, Q. Li, C. W. Tang, Y. Wan, E. L. Hu, and K. M. Lau, “1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si,” Appl. Phys. Lett. 110(12), 121109 (2017).
[Crossref]

J. Norman, M. J. Kennedy, J. Selvidge, Q. Li, Y. Wan, A. Y. Liu, P. G. Callahan, M. P. Echlin, T. M. Pollock, K. M. Lau, A. C. Gossard, and J. E. Bowers, “Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si,” Opt. Express 25(4), 3927–3934 (2017).
[Crossref] [PubMed]

Y. Wan, J. Norman, Q. Li, M. J. Kennedy, D. Liang, C. Zhang, D. Huang, Z. Zhang, A. Y. Liu, A. Torres, D. Jung, A. C. Gossard, E. L. Hu, K. M. Lau, and J. E. Bowers, “1.3 µm submilliamp threshold quantum dot micro-lasers on Si,” Optica 4(8), 940 (2017).
[Crossref]

Q. Li, Y. Wan, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon,” Opt. Express 24(18), 21038–21045 (2016).
[Crossref] [PubMed]

Y. Wan, Q. Li, A. Y. Liu, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon,” Opt. Lett. 41(7), 1664–1667 (2016).
[Crossref] [PubMed]

Y. Wan, Q. Li, A. Y. Liu, W. W. Chow, A. C. Gossard, J. E. Bowers, E. L. Hu, and K. M. Lau, “Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates,” Appl. Phys. Lett. 108(22), 221101 (2016).
[Crossref]

D. Jung, J. Norman, M. J. Kennedy, C. Shang, B. Shin, Y. Wan, A. C. Gossard, and J. E. Bowers, “High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si,” Appl. Phys. Lett.under review.

Wang, R.

Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
[Crossref]

Wang, Y.

Wang, Z.

Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
[Crossref]

Wey, Y.

Y. Wey, K. Giboney, J. Bowers, M. Rodwell, P. Silvestre, P. Thiagarajan, and G. Robinson, “110-GHz GalnAslInP Double Heterostructure p-i-n Photo detectors,” J. Lightwave Technol. 13(7), 1490–1499 (1995).
[Crossref]

Wiegmann, W.

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric Field Dependence of Optical Absorption near the Band gap of Quantum-Well Structures,” Phys. Rev. B Condens. Matter 32(2), 1043–1060 (1985).
[Crossref] [PubMed]

Wood, T. H.

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric Field Dependence of Optical Absorption near the Band gap of Quantum-Well Structures,” Phys. Rev. B Condens. Matter 32(2), 1043–1060 (1985).
[Crossref] [PubMed]

Wu, J.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III-V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

J. Wu, Q. Jiang, S. Chen, M. Tang, Y. I. Mazur, Y. Maidaniuk, M. Benamara, M. P. Semtsiv, W. T. Masselink, K. A. Sablon, G. J. Salamo, and H. Liu, “Monolithically integrated InAs/GaAs quantum dot mid-infrared photodetectors on silicon substrates,” ACS Photonics 3(5), 749–753 (2016).
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Wu, R.

Xie, W.

Z. Wang, A. Abbasi, U. Dave, A. De Groote, S. Kumari, B. Kunert, C. Merckling, M. Pantouvaki, Y. Shi, B. Tian, K. Van Gasse, J. Verbist, R. Wang, W. Xie, J. Zhang, Y. Zhu, J. Bauwelinck, X. Yin, Z. Hens, J. Van Campenhout, B. Kuyken, R. Baets, G. Morthier, D. Van Thourhout, and G. Roelkens, “Novel light source integration approaches for silicon photonics,” Laser Photonics Rev. 11(4), 1700063 (2017).
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Figures (7)

Fig. 1
Fig. 1 (a) Epitaxial structure of the epitaxial structure of the p-i-n PD; (b) TEM image of one layer of the QDs.
Fig. 2
Fig. 2 (a) Schematic plot of the PD fabricated on the GoVS template; (b) top-view and (c) cross-sectional view SEM images of a fabricated device.
Fig. 3
Fig. 3 (a) full-scale and (b) zoomed-in scale of the I-V curve without light input for a rectangular photodiode of 20 μm in width and 50 μm in length.
Fig. 4
Fig. 4 (a) Spectral response at different voltage biases; (b) responsivity as a function of reverse bias in the O band for a rectangular photodiode of 20 μm in width and 50 μm in length.
Fig. 5
Fig. 5 (a) The small signal equivalent circuit used to extract series resistance and capacitance from the PD; (b) the extracted series resistance and capacitance of the device; (c) fitting results of the Smith chart.
Fig. 6
Fig. 6 (a) RC limited OE response extracted from a quasi-static circuit model (red line), calculated OE response considering the combined effects of RC response and the carrier trapping (dark line), OE response obtained from the S12 measurement (blue dots). Inset: calculation result of the hole escape and electron escape rate. (b) OE response of a QD PD obtained by measuring optically generated RF signal. Inset: Bias dependence of the measured and modeled 3-dB bandwidth of this device.
Fig. 7
Fig. 7 (a) Top-view of the fabricated laser-PD systems through free-space coupling; (b) measured laser voltage and detector photocurrent as a function of the injection current for a 50-μm outer-ring radius micro-ring laser, with a mesa width of 4μm.

Equations (1)

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1 τ tot π 2 m * L z 2 exp( 4 2 m * ( E I * ) 3 2 3qF )×exp( E h E I * k B T )

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