Abstract

GeSn alloys with Sn contents of 8.4 % and 10.7 % are grown pseudomorphically on Ge buffers on Si (001) substrates. The alloys as-grown are compressively strained, and therefore indirect bandgap. Undercut GeSn on Ge microdisk structures are fabricated and strained by silicon nitride stressor layers, which leads to tensile strain in the alloys, and direct bandgap photoluminescence in the 3–5 µm gas sensing window of the electromagnetic spectrum. The use of pseudomorphic layers and external stress mitigates the need for plastic deformation to obtain direct bandgap alloys. It is demonstrated, that the optically pumped light emission overlaps with the methane absorption lines, suggesting that GeSn alloys are well suited for mid-infrared integrated gas sensors on Si chips.

© 2017 Optical Society of America

Full Article  |  PDF Article
OSA Recommended Articles
Simulation investigation of tensile strained GeSn fin photodetector with Si3N4 liner stressor for extension of absorption wavelength

Qingfang Zhang, Yan Liu, Jing Yan, Chunfu Zhang, Yue Hao, and Genquan Han
Opt. Express 23(2) 739-746 (2015)

Tensile-strained Ge/SiGe multiple quantum well microdisks

Xiaochi Chen, Colleen S. Fenrich, Muyu Xue, Ming-Yen Kao, Kai Zang, Ching-Ying Lu, Edward T. Fei, Yusi Chen, Yijie Huo, Theodore I. Kamins, and James S. Harris
Photon. Res. 5(6) B7-B14 (2017)

Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well

Chung-Yi Lin, Hung-Yu Ye, Fang-Liang Lu, H. S. Lan, and C. W. Liu
Opt. Mater. Express 8(9) 2795-2802 (2018)

References

  • View by:
  • |
  • |
  • |

  1. G. T. Reed, ed., Silicon Photonics: The State of the Art (John Wiley & Sons Ltd., 2008).
    [Crossref]
  2. D. J. Paul, “Silicon photonics: a bright future?” Electron. Lett. 45, 582–584 (2009).
    [Crossref]
  3. J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35, 679–681 (2010).
    [Crossref] [PubMed]
  4. R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20, 11316–11320 (2012).
    [Crossref] [PubMed]
  5. M. V. Fischetti and S. E. Laux, “Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys,” J. Appl. Phys. 80, 2234 (1996).
    [Crossref]
  6. M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7, 466–472 (2013).
    [Crossref]
  7. D. S. Sukhdeo, D. Nam, J.-H. Kang, M. L. Brongersma, and K. C. Saraswat, “Direct bandgap germanium-on-silicon inferred from 57% <100> uniaxial tensile strain [Invited],” Photon. Res. 2, A8 (2014).
    [Crossref]
  8. J. Petykiewicz, D. Nam, D. S. Sukhdeo, S. Gupta, S. Buckley, A. Y. Piggott, J. Vučković, and K. C. Saraswat, “Direct bandgap light emission from strained germanium nanowires coupled with high-q nanophotonic cavities,” Nano Letters 16, 2168–2173 (2016).
    [Crossref] [PubMed]
  9. G. Capellini, C. Reich, S. Guha, Y. Yamamoto, M. Lisker, M. Virgilio, A. Ghrib, M. E. Kurdi, P. Boucaud, B. Tillack, and T. Schroeder, “Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process,” Opt. Express 22, 399–410 (2014).
    [Crossref] [PubMed]
  10. R. Millar, K. Gallacher, A. Samarelli, J. Frigerio, D. Chrastina, G. Isella, T. Dieing, and D. Paul, “Extending the emission wavelength of Ge nanopillars to 2.25 µm using silicon nitride stressors,” Opt. Express 23, 18193–18202 (2015).
    [Crossref] [PubMed]
  11. A. Ghrib, M. El Kurdi, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, M. Chaigneau, R. Ossikovski, I. Sagnes, and P. Boucaud, “All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities,” Adv. Opt. Mater. 3, 353–358 (2015).
    [Crossref]
  12. M. El Kurdi, M. Prost, A. Ghrib, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, and P. Boucaud, “Direct band gap germanium microdisks obtained with silicon nitride stressor layers,” ACS Photonics 3, 443–448 (2016).
    [Crossref]
  13. R. Millar, K. Gallacher, J. Frigerio, A. Ballabio, A. Bashir, I. MacLaren, G. Isella, and D. J. Paul, “Analysis of Ge micro-cavities with in-plane tensile strains above 2 %,” Opt. Express 24, 4365–4374 (2016).
    [Crossref]
  14. J. R. Sanchez-Perez, Boztug, Cicek, Chen, Feng, F. F. Sudradjat, D. M. Paskiewicz, RB Jacobson, M. G. Lagally, and R. Paiella, “Direct-bandgap light-emitting germanium in tensilely strained nanomembranes,” Proc. Nat. Acad. Sci. 108, 18893–18898 (2011).
    [Crossref] [PubMed]
  15. D. S. Sukhdeo, D. Nam, J.-H. Kang, M. L. Brongersma, and K. C. Saraswat, “Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics,” Opt. Express 23, 16740 (2015).
    [Crossref] [PubMed]
  16. S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
    [Crossref]
  17. D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
    [Crossref]
  18. S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
    [Crossref]
  19. F. Pezzoli, F. Isa, G. Isella, C. Falub, T. Kreiliger, M. Salvalaglio, R. Bergamaschini, E. Grilli, M. Guzzi, H. von Känel, and L. Miglio, “Ge Crystals on Si Show Their Light,” Phys. Rev. Appl. 1, 044005 (2014).
    [Crossref]
  20. F. Pezzoli, A. Giorgioni, D. Patchett, and M. Myronov, “Temperature-dependent photoluminescence characteristics of GeSn epitaxial layers,” ACS Photonics 3, 2004–2009 (2016).
    [Crossref]
  21. S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, “Tensely strained GeSn alloys as optical gain media,” Appl. Phys. Lett. 103, 0–5 (2013).
    [Crossref]
  22. D. Sukhdeo, Y. Kim, S. Gupta, K. Saraswat, B. Dutt, and D. Nam, “Theoretical Modeling for the Interaction of Tin Alloying with N-Type Doping and Tensile Strain for GeSn Lasers,” IEEE Electron Device Lett. 37, 1307–1310 (2016).
    [Crossref]
  23. J. Hodgkinson and R. P. Tatam, “Optical gas sensing: a review,” Meas. Sci. Technol. 24, 012004 (2013).
    [Crossref]
  24. L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
    [Crossref]
  25. R. Soref, “Mid-infrared photonics in silicon and germanium,” Nat. Photonics 4, 495–497 (2010).
    [Crossref]
  26. D. Stange, S. Wirths, N. von den Driesch, G. Mussler, T. Stoica, Z. Ikonic, J. M. Hartmann, S. Mantl, D. Grützmacher, and D. Buca, “Optical Transitions in Direct-Bandgap Ge1−x Snx Alloys,” ACS Photonics 2, 1539–1545 (2015).
    [Crossref]
  27. S. Gupta, R. Chen, Y. C. Huang, Y. Kim, E. Sanchez, J. S. Harris, and K. C. Saraswat, “Highly selective dry etching of germanium over germanium-tin (Ge1−x Snx): A novel route for Ge1−x Snx nanostructure fabrication,” Nano Lett. 13, 3783–3790 (2013).
    [Crossref] [PubMed]
  28. A. Ghrib, M. E. Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
    [Crossref]
  29. C. S. Fenrich, X. Chen, R. Chen, Y. C. Huang, H. Chung, M. Y. Kao, Y. Huo, T. I. Kamins, and J. S. Harris, “Strained Pseudomorphic Ge1−x Snx Multiple Quantum Well Microdisk Using SiNy Stressor Layer,” ACS Photonics 3, 2231–2236 (2016).
    [Crossref]
  30. G. G. Stoney, “The tension of metallic films deposited by electrolysis,” Proc. R. Soc. London, Ser. A 82, 172–175 (1909).
    [Crossref]
  31. S. Gupta, R. Chen, J. S. Harris, and K. C. Saraswat, “Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment,” Appl. Phys. Lett. 103, 10–14 (2013).
  32. R. Hickey, N. Fernando, S. Zollner, J. Hart, R. Hazbun, and J. Kolodzey, “Properties of pseudomorphic and relaxed germanium1−x tinx alloys (x < 0.185) grown by MBE,” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, 021205 (2017).
  33. R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
    [Crossref]
  34. F. Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella, D. J. Paul, and L. Miglio, “Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates,” Applied Physics Letters 108, 262103 (2016).
    [Crossref]

2017 (1)

R. Hickey, N. Fernando, S. Zollner, J. Hart, R. Hazbun, and J. Kolodzey, “Properties of pseudomorphic and relaxed germanium1−x tinx alloys (x < 0.185) grown by MBE,” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, 021205 (2017).

2016 (9)

C. S. Fenrich, X. Chen, R. Chen, Y. C. Huang, H. Chung, M. Y. Kao, Y. Huo, T. I. Kamins, and J. S. Harris, “Strained Pseudomorphic Ge1−x Snx Multiple Quantum Well Microdisk Using SiNy Stressor Layer,” ACS Photonics 3, 2231–2236 (2016).
[Crossref]

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

F. Pezzoli, A. Giorgioni, D. Patchett, and M. Myronov, “Temperature-dependent photoluminescence characteristics of GeSn epitaxial layers,” ACS Photonics 3, 2004–2009 (2016).
[Crossref]

D. Sukhdeo, Y. Kim, S. Gupta, K. Saraswat, B. Dutt, and D. Nam, “Theoretical Modeling for the Interaction of Tin Alloying with N-Type Doping and Tensile Strain for GeSn Lasers,” IEEE Electron Device Lett. 37, 1307–1310 (2016).
[Crossref]

F. Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella, D. J. Paul, and L. Miglio, “Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates,” Applied Physics Letters 108, 262103 (2016).
[Crossref]

J. Petykiewicz, D. Nam, D. S. Sukhdeo, S. Gupta, S. Buckley, A. Y. Piggott, J. Vučković, and K. C. Saraswat, “Direct bandgap light emission from strained germanium nanowires coupled with high-q nanophotonic cavities,” Nano Letters 16, 2168–2173 (2016).
[Crossref] [PubMed]

M. El Kurdi, M. Prost, A. Ghrib, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, and P. Boucaud, “Direct band gap germanium microdisks obtained with silicon nitride stressor layers,” ACS Photonics 3, 443–448 (2016).
[Crossref]

R. Millar, K. Gallacher, J. Frigerio, A. Ballabio, A. Bashir, I. MacLaren, G. Isella, and D. J. Paul, “Analysis of Ge micro-cavities with in-plane tensile strains above 2 %,” Opt. Express 24, 4365–4374 (2016).
[Crossref]

2015 (5)

D. S. Sukhdeo, D. Nam, J.-H. Kang, M. L. Brongersma, and K. C. Saraswat, “Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics,” Opt. Express 23, 16740 (2015).
[Crossref] [PubMed]

R. Millar, K. Gallacher, A. Samarelli, J. Frigerio, D. Chrastina, G. Isella, T. Dieing, and D. Paul, “Extending the emission wavelength of Ge nanopillars to 2.25 µm using silicon nitride stressors,” Opt. Express 23, 18193–18202 (2015).
[Crossref] [PubMed]

A. Ghrib, M. El Kurdi, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, M. Chaigneau, R. Ossikovski, I. Sagnes, and P. Boucaud, “All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities,” Adv. Opt. Mater. 3, 353–358 (2015).
[Crossref]

D. Stange, S. Wirths, N. von den Driesch, G. Mussler, T. Stoica, Z. Ikonic, J. M. Hartmann, S. Mantl, D. Grützmacher, and D. Buca, “Optical Transitions in Direct-Bandgap Ge1−x Snx Alloys,” ACS Photonics 2, 1539–1545 (2015).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]

2014 (3)

2013 (8)

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7, 466–472 (2013).
[Crossref]

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, “Tensely strained GeSn alloys as optical gain media,” Appl. Phys. Lett. 103, 0–5 (2013).
[Crossref]

J. Hodgkinson and R. P. Tatam, “Optical gas sensing: a review,” Meas. Sci. Technol. 24, 012004 (2013).
[Crossref]

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

S. Gupta, R. Chen, J. S. Harris, and K. C. Saraswat, “Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment,” Appl. Phys. Lett. 103, 10–14 (2013).

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

S. Gupta, R. Chen, Y. C. Huang, Y. Kim, E. Sanchez, J. S. Harris, and K. C. Saraswat, “Highly selective dry etching of germanium over germanium-tin (Ge1−x Snx): A novel route for Ge1−x Snx nanostructure fabrication,” Nano Lett. 13, 3783–3790 (2013).
[Crossref] [PubMed]

A. Ghrib, M. E. Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

2012 (1)

2011 (1)

J. R. Sanchez-Perez, Boztug, Cicek, Chen, Feng, F. F. Sudradjat, D. M. Paskiewicz, RB Jacobson, M. G. Lagally, and R. Paiella, “Direct-bandgap light-emitting germanium in tensilely strained nanomembranes,” Proc. Nat. Acad. Sci. 108, 18893–18898 (2011).
[Crossref] [PubMed]

2010 (2)

2009 (1)

D. J. Paul, “Silicon photonics: a bright future?” Electron. Lett. 45, 582–584 (2009).
[Crossref]

1996 (1)

M. V. Fischetti and S. E. Laux, “Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys,” J. Appl. Phys. 80, 2234 (1996).
[Crossref]

1909 (1)

G. G. Stoney, “The tension of metallic films deposited by electrolysis,” Proc. R. Soc. London, Ser. A 82, 172–175 (1909).
[Crossref]

Al-Kabi, S.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Babikov, Y.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Ballabio, A.

Barbe, A.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Bashir, A.

Beaudoin, G.

M. El Kurdi, M. Prost, A. Ghrib, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, and P. Boucaud, “Direct band gap germanium microdisks obtained with silicon nitride stressor layers,” ACS Photonics 3, 443–448 (2016).
[Crossref]

A. Ghrib, M. El Kurdi, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, M. Chaigneau, R. Ossikovski, I. Sagnes, and P. Boucaud, “All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities,” Adv. Opt. Mater. 3, 353–358 (2015).
[Crossref]

A. Ghrib, M. E. Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

Benedetti, A.

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, “Tensely strained GeSn alloys as optical gain media,” Appl. Phys. Lett. 103, 0–5 (2013).
[Crossref]

Benner, D. C.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Bergamaschini, R.

F. Pezzoli, F. Isa, G. Isella, C. Falub, T. Kreiliger, M. Salvalaglio, R. Bergamaschini, E. Grilli, M. Guzzi, H. von Känel, and L. Miglio, “Ge Crystals on Si Show Their Light,” Phys. Rev. Appl. 1, 044005 (2014).
[Crossref]

Bernath, P.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Bessette, J. T.

Biagioni, P.

F. Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella, D. J. Paul, and L. Miglio, “Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates,” Applied Physics Letters 108, 262103 (2016).
[Crossref]

Birk, M.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Bizzocchi, L.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Bonera, E.

F. Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella, D. J. Paul, and L. Miglio, “Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates,” Applied Physics Letters 108, 262103 (2016).
[Crossref]

Boucaud, P.

M. El Kurdi, M. Prost, A. Ghrib, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, and P. Boucaud, “Direct band gap germanium microdisks obtained with silicon nitride stressor layers,” ACS Photonics 3, 443–448 (2016).
[Crossref]

A. Ghrib, M. El Kurdi, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, M. Chaigneau, R. Ossikovski, I. Sagnes, and P. Boucaud, “All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities,” Adv. Opt. Mater. 3, 353–358 (2015).
[Crossref]

G. Capellini, C. Reich, S. Guha, Y. Yamamoto, M. Lisker, M. Virgilio, A. Ghrib, M. E. Kurdi, P. Boucaud, B. Tillack, and T. Schroeder, “Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process,” Opt. Express 22, 399–410 (2014).
[Crossref] [PubMed]

A. Ghrib, M. E. Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

Boudon, V.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Boztug,

J. R. Sanchez-Perez, Boztug, Cicek, Chen, Feng, F. F. Sudradjat, D. M. Paskiewicz, RB Jacobson, M. G. Lagally, and R. Paiella, “Direct-bandgap light-emitting germanium in tensilely strained nanomembranes,” Proc. Nat. Acad. Sci. 108, 18893–18898 (2011).
[Crossref] [PubMed]

Breuer, U.

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, “Tensely strained GeSn alloys as optical gain media,” Appl. Phys. Lett. 103, 0–5 (2013).
[Crossref]

Brongersma, M. L.

Brown, L.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Buca, D.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]

D. Stange, S. Wirths, N. von den Driesch, G. Mussler, T. Stoica, Z. Ikonic, J. M. Hartmann, S. Mantl, D. Grützmacher, and D. Buca, “Optical Transitions in Direct-Bandgap Ge1−x Snx Alloys,” ACS Photonics 2, 1539–1545 (2015).
[Crossref]

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, “Tensely strained GeSn alloys as optical gain media,” Appl. Phys. Lett. 103, 0–5 (2013).
[Crossref]

Buckley, S.

J. Petykiewicz, D. Nam, D. S. Sukhdeo, S. Gupta, S. Buckley, A. Y. Piggott, J. Vučković, and K. C. Saraswat, “Direct bandgap light emission from strained germanium nanowires coupled with high-q nanophotonic cavities,” Nano Letters 16, 2168–2173 (2016).
[Crossref] [PubMed]

Cai, Y.

Camacho-Aguilera, R.

Camacho-Aguilera, R. E.

Campargue, A.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Capellini, G.

Chaigneau, M.

A. Ghrib, M. El Kurdi, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, M. Chaigneau, R. Ossikovski, I. Sagnes, and P. Boucaud, “All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities,” Adv. Opt. Mater. 3, 353–358 (2015).
[Crossref]

Chance, K.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Checoury, X.

M. El Kurdi, M. Prost, A. Ghrib, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, and P. Boucaud, “Direct band gap germanium microdisks obtained with silicon nitride stressor layers,” ACS Photonics 3, 443–448 (2016).
[Crossref]

A. Ghrib, M. El Kurdi, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, M. Chaigneau, R. Ossikovski, I. Sagnes, and P. Boucaud, “All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities,” Adv. Opt. Mater. 3, 353–358 (2015).
[Crossref]

A. Ghrib, M. E. Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

Chen,

J. R. Sanchez-Perez, Boztug, Cicek, Chen, Feng, F. F. Sudradjat, D. M. Paskiewicz, RB Jacobson, M. G. Lagally, and R. Paiella, “Direct-bandgap light-emitting germanium in tensilely strained nanomembranes,” Proc. Nat. Acad. Sci. 108, 18893–18898 (2011).
[Crossref] [PubMed]

Chen, R.

C. S. Fenrich, X. Chen, R. Chen, Y. C. Huang, H. Chung, M. Y. Kao, Y. Huo, T. I. Kamins, and J. S. Harris, “Strained Pseudomorphic Ge1−x Snx Multiple Quantum Well Microdisk Using SiNy Stressor Layer,” ACS Photonics 3, 2231–2236 (2016).
[Crossref]

S. Gupta, R. Chen, J. S. Harris, and K. C. Saraswat, “Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment,” Appl. Phys. Lett. 103, 10–14 (2013).

S. Gupta, R. Chen, Y. C. Huang, Y. Kim, E. Sanchez, J. S. Harris, and K. C. Saraswat, “Highly selective dry etching of germanium over germanium-tin (Ge1−x Snx): A novel route for Ge1−x Snx nanostructure fabrication,” Nano Lett. 13, 3783–3790 (2013).
[Crossref] [PubMed]

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

Chen, X.

C. S. Fenrich, X. Chen, R. Chen, Y. C. Huang, H. Chung, M. Y. Kao, Y. Huo, T. I. Kamins, and J. S. Harris, “Strained Pseudomorphic Ge1−x Snx Multiple Quantum Well Microdisk Using SiNy Stressor Layer,” ACS Photonics 3, 2231–2236 (2016).
[Crossref]

Cheng, R.

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

Chiussi, S.

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, “Tensely strained GeSn alloys as optical gain media,” Appl. Phys. Lett. 103, 0–5 (2013).
[Crossref]

Chrastina, D.

R. Millar, K. Gallacher, A. Samarelli, J. Frigerio, D. Chrastina, G. Isella, T. Dieing, and D. Paul, “Extending the emission wavelength of Ge nanopillars to 2.25 µm using silicon nitride stressors,” Opt. Express 23, 18193–18202 (2015).
[Crossref] [PubMed]

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7, 466–472 (2013).
[Crossref]

Chung, H.

C. S. Fenrich, X. Chen, R. Chen, Y. C. Huang, H. Chung, M. Y. Kao, Y. Huo, T. I. Kamins, and J. S. Harris, “Strained Pseudomorphic Ge1−x Snx Multiple Quantum Well Microdisk Using SiNy Stressor Layer,” ACS Photonics 3, 2231–2236 (2016).
[Crossref]

Cicek,

J. R. Sanchez-Perez, Boztug, Cicek, Chen, Feng, F. F. Sudradjat, D. M. Paskiewicz, RB Jacobson, M. G. Lagally, and R. Paiella, “Direct-bandgap light-emitting germanium in tensilely strained nanomembranes,” Proc. Nat. Acad. Sci. 108, 18893–18898 (2011).
[Crossref] [PubMed]

Cohen, E.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Collier, B.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Coudert, L.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

de Kersauson, M.

A. Ghrib, M. E. Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

Devi, V.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Dieing, T.

Dou, W.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Driesch, N. V. D.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

Drouin, B.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Du, W.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Dutt, B.

D. Sukhdeo, Y. Kim, S. Gupta, K. Saraswat, B. Dutt, and D. Nam, “Theoretical Modeling for the Interaction of Tin Alloying with N-Type Doping and Tensile Strain for GeSn Lasers,” IEEE Electron Device Lett. 37, 1307–1310 (2016).
[Crossref]

El Kurdi, M.

M. El Kurdi, M. Prost, A. Ghrib, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, and P. Boucaud, “Direct band gap germanium microdisks obtained with silicon nitride stressor layers,” ACS Photonics 3, 443–448 (2016).
[Crossref]

Faist, J.

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7, 466–472 (2013).
[Crossref]

Falub, C.

F. Pezzoli, F. Isa, G. Isella, C. Falub, T. Kreiliger, M. Salvalaglio, R. Bergamaschini, E. Grilli, M. Guzzi, H. von Känel, and L. Miglio, “Ge Crystals on Si Show Their Light,” Phys. Rev. Appl. 1, 044005 (2014).
[Crossref]

Fayt, A.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Feng,

J. R. Sanchez-Perez, Boztug, Cicek, Chen, Feng, F. F. Sudradjat, D. M. Paskiewicz, RB Jacobson, M. G. Lagally, and R. Paiella, “Direct-bandgap light-emitting germanium in tensilely strained nanomembranes,” Proc. Nat. Acad. Sci. 108, 18893–18898 (2011).
[Crossref] [PubMed]

Fenrich, C. S.

C. S. Fenrich, X. Chen, R. Chen, Y. C. Huang, H. Chung, M. Y. Kao, Y. Huo, T. I. Kamins, and J. S. Harris, “Strained Pseudomorphic Ge1−x Snx Multiple Quantum Well Microdisk Using SiNy Stressor Layer,” ACS Photonics 3, 2231–2236 (2016).
[Crossref]

Fernando, N.

R. Hickey, N. Fernando, S. Zollner, J. Hart, R. Hazbun, and J. Kolodzey, “Properties of pseudomorphic and relaxed germanium1−x tinx alloys (x < 0.185) grown by MBE,” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, 021205 (2017).

Fischetti, M. V.

M. V. Fischetti and S. E. Laux, “Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys,” J. Appl. Phys. 80, 2234 (1996).
[Crossref]

Flaud, J.-M.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Frigerio, J.

Gallacher, K.

Gamache, R.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Gatti, E.

F. Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella, D. J. Paul, and L. Miglio, “Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates,” Applied Physics Letters 108, 262103 (2016).
[Crossref]

Geiger, R.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7, 466–472 (2013).
[Crossref]

Ghetmiri, S. A.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Ghrib, A.

M. El Kurdi, M. Prost, A. Ghrib, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, and P. Boucaud, “Direct band gap germanium microdisks obtained with silicon nitride stressor layers,” ACS Photonics 3, 443–448 (2016).
[Crossref]

A. Ghrib, M. El Kurdi, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, M. Chaigneau, R. Ossikovski, I. Sagnes, and P. Boucaud, “All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities,” Adv. Opt. Mater. 3, 353–358 (2015).
[Crossref]

G. Capellini, C. Reich, S. Guha, Y. Yamamoto, M. Lisker, M. Virgilio, A. Ghrib, M. E. Kurdi, P. Boucaud, B. Tillack, and T. Schroeder, “Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process,” Opt. Express 22, 399–410 (2014).
[Crossref] [PubMed]

A. Ghrib, M. E. Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

Giorgioni, A.

F. Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella, D. J. Paul, and L. Miglio, “Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates,” Applied Physics Letters 108, 262103 (2016).
[Crossref]

F. Pezzoli, A. Giorgioni, D. Patchett, and M. Myronov, “Temperature-dependent photoluminescence characteristics of GeSn epitaxial layers,” ACS Photonics 3, 2004–2009 (2016).
[Crossref]

Gong, X.

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

Gordon, I.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Grilli, E.

F. Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella, D. J. Paul, and L. Miglio, “Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates,” Applied Physics Letters 108, 262103 (2016).
[Crossref]

F. Pezzoli, F. Isa, G. Isella, C. Falub, T. Kreiliger, M. Salvalaglio, R. Bergamaschini, E. Grilli, M. Guzzi, H. von Känel, and L. Miglio, “Ge Crystals on Si Show Their Light,” Phys. Rev. Appl. 1, 044005 (2014).
[Crossref]

Grützmacher, D.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]

D. Stange, S. Wirths, N. von den Driesch, G. Mussler, T. Stoica, Z. Ikonic, J. M. Hartmann, S. Mantl, D. Grützmacher, and D. Buca, “Optical Transitions in Direct-Bandgap Ge1−x Snx Alloys,” ACS Photonics 2, 1539–1545 (2015).
[Crossref]

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, “Tensely strained GeSn alloys as optical gain media,” Appl. Phys. Lett. 103, 0–5 (2013).
[Crossref]

Guha, S.

Guo, P.

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

Gupta, S.

J. Petykiewicz, D. Nam, D. S. Sukhdeo, S. Gupta, S. Buckley, A. Y. Piggott, J. Vučković, and K. C. Saraswat, “Direct bandgap light emission from strained germanium nanowires coupled with high-q nanophotonic cavities,” Nano Letters 16, 2168–2173 (2016).
[Crossref] [PubMed]

D. Sukhdeo, Y. Kim, S. Gupta, K. Saraswat, B. Dutt, and D. Nam, “Theoretical Modeling for the Interaction of Tin Alloying with N-Type Doping and Tensile Strain for GeSn Lasers,” IEEE Electron Device Lett. 37, 1307–1310 (2016).
[Crossref]

S. Gupta, R. Chen, Y. C. Huang, Y. Kim, E. Sanchez, J. S. Harris, and K. C. Saraswat, “Highly selective dry etching of germanium over germanium-tin (Ge1−x Snx): A novel route for Ge1−x Snx nanostructure fabrication,” Nano Lett. 13, 3783–3790 (2013).
[Crossref] [PubMed]

S. Gupta, R. Chen, J. S. Harris, and K. C. Saraswat, “Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment,” Appl. Phys. Lett. 103, 10–14 (2013).

Guzzi, M.

F. Pezzoli, F. Isa, G. Isella, C. Falub, T. Kreiliger, M. Salvalaglio, R. Bergamaschini, E. Grilli, M. Guzzi, H. von Känel, and L. Miglio, “Ge Crystals on Si Show Their Light,” Phys. Rev. Appl. 1, 044005 (2014).
[Crossref]

Han, G.

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

Harris, J. S.

C. S. Fenrich, X. Chen, R. Chen, Y. C. Huang, H. Chung, M. Y. Kao, Y. Huo, T. I. Kamins, and J. S. Harris, “Strained Pseudomorphic Ge1−x Snx Multiple Quantum Well Microdisk Using SiNy Stressor Layer,” ACS Photonics 3, 2231–2236 (2016).
[Crossref]

S. Gupta, R. Chen, J. S. Harris, and K. C. Saraswat, “Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment,” Appl. Phys. Lett. 103, 10–14 (2013).

S. Gupta, R. Chen, Y. C. Huang, Y. Kim, E. Sanchez, J. S. Harris, and K. C. Saraswat, “Highly selective dry etching of germanium over germanium-tin (Ge1−x Snx): A novel route for Ge1−x Snx nanostructure fabrication,” Nano Lett. 13, 3783–3790 (2013).
[Crossref] [PubMed]

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

Harrison, J.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Hart, J.

R. Hickey, N. Fernando, S. Zollner, J. Hart, R. Hazbun, and J. Kolodzey, “Properties of pseudomorphic and relaxed germanium1−x tinx alloys (x < 0.185) grown by MBE,” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, 021205 (2017).

Hartmann, J. M.

D. Stange, S. Wirths, N. von den Driesch, G. Mussler, T. Stoica, Z. Ikonic, J. M. Hartmann, S. Mantl, D. Grützmacher, and D. Buca, “Optical Transitions in Direct-Bandgap Ge1−x Snx Alloys,” ACS Photonics 2, 1539–1545 (2015).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, “Tensely strained GeSn alloys as optical gain media,” Appl. Phys. Lett. 103, 0–5 (2013).
[Crossref]

Hartmann, J.-M.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Hazbun, R.

R. Hickey, N. Fernando, S. Zollner, J. Hart, R. Hazbun, and J. Kolodzey, “Properties of pseudomorphic and relaxed germanium1−x tinx alloys (x < 0.185) grown by MBE,” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, 021205 (2017).

Hickey, R.

R. Hickey, N. Fernando, S. Zollner, J. Hart, R. Hazbun, and J. Kolodzey, “Properties of pseudomorphic and relaxed germanium1−x tinx alloys (x < 0.185) grown by MBE,” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, 021205 (2017).

Hill, C.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Hitzman, C.

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

Hodges, J.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Hodgkinson, J.

J. Hodgkinson and R. P. Tatam, “Optical gas sensing: a review,” Meas. Sci. Technol. 24, 012004 (2013).
[Crossref]

Holländer, B.

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, “Tensely strained GeSn alloys as optical gain media,” Appl. Phys. Lett. 103, 0–5 (2013).
[Crossref]

Hu, H.

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

Huang, Y. C.

C. S. Fenrich, X. Chen, R. Chen, Y. C. Huang, H. Chung, M. Y. Kao, Y. Huo, T. I. Kamins, and J. S. Harris, “Strained Pseudomorphic Ge1−x Snx Multiple Quantum Well Microdisk Using SiNy Stressor Layer,” ACS Photonics 3, 2231–2236 (2016).
[Crossref]

S. Gupta, R. Chen, Y. C. Huang, Y. Kim, E. Sanchez, J. S. Harris, and K. C. Saraswat, “Highly selective dry etching of germanium over germanium-tin (Ge1−x Snx): A novel route for Ge1−x Snx nanostructure fabrication,” Nano Lett. 13, 3783–3790 (2013).
[Crossref] [PubMed]

Huo, Y.

C. S. Fenrich, X. Chen, R. Chen, Y. C. Huang, H. Chung, M. Y. Kao, Y. Huo, T. I. Kamins, and J. S. Harris, “Strained Pseudomorphic Ge1−x Snx Multiple Quantum Well Microdisk Using SiNy Stressor Layer,” ACS Photonics 3, 2231–2236 (2016).
[Crossref]

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

Ikonic, Z.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]

D. Stange, S. Wirths, N. von den Driesch, G. Mussler, T. Stoica, Z. Ikonic, J. M. Hartmann, S. Mantl, D. Grützmacher, and D. Buca, “Optical Transitions in Direct-Bandgap Ge1−x Snx Alloys,” ACS Photonics 2, 1539–1545 (2015).
[Crossref]

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, “Tensely strained GeSn alloys as optical gain media,” Appl. Phys. Lett. 103, 0–5 (2013).
[Crossref]

Isa, F.

F. Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella, D. J. Paul, and L. Miglio, “Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates,” Applied Physics Letters 108, 262103 (2016).
[Crossref]

F. Pezzoli, F. Isa, G. Isella, C. Falub, T. Kreiliger, M. Salvalaglio, R. Bergamaschini, E. Grilli, M. Guzzi, H. von Känel, and L. Miglio, “Ge Crystals on Si Show Their Light,” Phys. Rev. Appl. 1, 044005 (2014).
[Crossref]

Isella, G.

F. Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella, D. J. Paul, and L. Miglio, “Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates,” Applied Physics Letters 108, 262103 (2016).
[Crossref]

R. Millar, K. Gallacher, J. Frigerio, A. Ballabio, A. Bashir, I. MacLaren, G. Isella, and D. J. Paul, “Analysis of Ge micro-cavities with in-plane tensile strains above 2 %,” Opt. Express 24, 4365–4374 (2016).
[Crossref]

R. Millar, K. Gallacher, A. Samarelli, J. Frigerio, D. Chrastina, G. Isella, T. Dieing, and D. Paul, “Extending the emission wavelength of Ge nanopillars to 2.25 µm using silicon nitride stressors,” Opt. Express 23, 18193–18202 (2015).
[Crossref] [PubMed]

F. Pezzoli, F. Isa, G. Isella, C. Falub, T. Kreiliger, M. Salvalaglio, R. Bergamaschini, E. Grilli, M. Guzzi, H. von Känel, and L. Miglio, “Ge Crystals on Si Show Their Light,” Phys. Rev. Appl. 1, 044005 (2014).
[Crossref]

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7, 466–472 (2013).
[Crossref]

Jacobson, RB

J. R. Sanchez-Perez, Boztug, Cicek, Chen, Feng, F. F. Sudradjat, D. M. Paskiewicz, RB Jacobson, M. G. Lagally, and R. Paiella, “Direct-bandgap light-emitting germanium in tensilely strained nanomembranes,” Proc. Nat. Acad. Sci. 108, 18893–18898 (2011).
[Crossref] [PubMed]

Jacquemart, D.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Jolly, A.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Kamins, T. I.

C. S. Fenrich, X. Chen, R. Chen, Y. C. Huang, H. Chung, M. Y. Kao, Y. Huo, T. I. Kamins, and J. S. Harris, “Strained Pseudomorphic Ge1−x Snx Multiple Quantum Well Microdisk Using SiNy Stressor Layer,” ACS Photonics 3, 2231–2236 (2016).
[Crossref]

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

Kang, J.-H.

Kao, M. Y.

C. S. Fenrich, X. Chen, R. Chen, Y. C. Huang, H. Chung, M. Y. Kao, Y. Huo, T. I. Kamins, and J. S. Harris, “Strained Pseudomorphic Ge1−x Snx Multiple Quantum Well Microdisk Using SiNy Stressor Layer,” ACS Photonics 3, 2231–2236 (2016).
[Crossref]

Kim, Y.

D. Sukhdeo, Y. Kim, S. Gupta, K. Saraswat, B. Dutt, and D. Nam, “Theoretical Modeling for the Interaction of Tin Alloying with N-Type Doping and Tensile Strain for GeSn Lasers,” IEEE Electron Device Lett. 37, 1307–1310 (2016).
[Crossref]

S. Gupta, R. Chen, Y. C. Huang, Y. Kim, E. Sanchez, J. S. Harris, and K. C. Saraswat, “Highly selective dry etching of germanium over germanium-tin (Ge1−x Snx): A novel route for Ge1−x Snx nanostructure fabrication,” Nano Lett. 13, 3783–3790 (2013).
[Crossref] [PubMed]

Kimerling, L. C.

Kolodzey, J.

R. Hickey, N. Fernando, S. Zollner, J. Hart, R. Hazbun, and J. Kolodzey, “Properties of pseudomorphic and relaxed germanium1−x tinx alloys (x < 0.185) grown by MBE,” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, 021205 (2017).

Kreiliger, T.

F. Pezzoli, F. Isa, G. Isella, C. Falub, T. Kreiliger, M. Salvalaglio, R. Bergamaschini, E. Grilli, M. Guzzi, H. von Känel, and L. Miglio, “Ge Crystals on Si Show Their Light,” Phys. Rev. Appl. 1, 044005 (2014).
[Crossref]

Kurdi, M. E.

Kurdi, M. El

A. Ghrib, M. El Kurdi, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, M. Chaigneau, R. Ossikovski, I. Sagnes, and P. Boucaud, “All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities,” Adv. Opt. Mater. 3, 353–358 (2015).
[Crossref]

Lagally, M. G.

J. R. Sanchez-Perez, Boztug, Cicek, Chen, Feng, F. F. Sudradjat, D. M. Paskiewicz, RB Jacobson, M. G. Lagally, and R. Paiella, “Direct-bandgap light-emitting germanium in tensilely strained nanomembranes,” Proc. Nat. Acad. Sci. 108, 18893–18898 (2011).
[Crossref] [PubMed]

Lamouroux, J.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Laux, S. E.

M. V. Fischetti and S. E. Laux, “Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys,” J. Appl. Phys. 80, 2234 (1996).
[Crossref]

Li, B.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Li, G.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Lin, H.

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

Lisker, M.

Liu, J.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35, 679–681 (2010).
[Crossref] [PubMed]

Long, D.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Luysberg, M.

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]

Lyulin, O.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Mackie, C.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

MacLaren, I.

Mantl, S.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]

D. Stange, S. Wirths, N. von den Driesch, G. Mussler, T. Stoica, Z. Ikonic, J. M. Hartmann, S. Mantl, D. Grützmacher, and D. Buca, “Optical Transitions in Direct-Bandgap Ge1−x Snx Alloys,” ACS Photonics 2, 1539–1545 (2015).
[Crossref]

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, “Tensely strained GeSn alloys as optical gain media,” Appl. Phys. Lett. 103, 0–5 (2013).
[Crossref]

Margetis, J.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Marzban, B.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

Massie, S.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Michel, J.

Miglio, L.

F. Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella, D. J. Paul, and L. Miglio, “Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates,” Applied Physics Letters 108, 262103 (2016).
[Crossref]

F. Pezzoli, F. Isa, G. Isella, C. Falub, T. Kreiliger, M. Salvalaglio, R. Bergamaschini, E. Grilli, M. Guzzi, H. von Känel, and L. Miglio, “Ge Crystals on Si Show Their Light,” Phys. Rev. Appl. 1, 044005 (2014).
[Crossref]

Mijller, H.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Mikhailenko, S.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Millar, R.

Millar, R. W.

F. Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella, D. J. Paul, and L. Miglio, “Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates,” Applied Physics Letters 108, 262103 (2016).
[Crossref]

Minamisawa, R. A.

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7, 466–472 (2013).
[Crossref]

Mortazavi, M.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Mosleh, A.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Mussler, G.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]

D. Stange, S. Wirths, N. von den Driesch, G. Mussler, T. Stoica, Z. Ikonic, J. M. Hartmann, S. Mantl, D. Grützmacher, and D. Buca, “Optical Transitions in Direct-Bandgap Ge1−x Snx Alloys,” ACS Photonics 2, 1539–1545 (2015).
[Crossref]

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, “Tensely strained GeSn alloys as optical gain media,” Appl. Phys. Lett. 103, 0–5 (2013).
[Crossref]

Myronov, M.

F. Pezzoli, A. Giorgioni, D. Patchett, and M. Myronov, “Temperature-dependent photoluminescence characteristics of GeSn epitaxial layers,” ACS Photonics 3, 2004–2009 (2016).
[Crossref]

Nam, D.

D. Sukhdeo, Y. Kim, S. Gupta, K. Saraswat, B. Dutt, and D. Nam, “Theoretical Modeling for the Interaction of Tin Alloying with N-Type Doping and Tensile Strain for GeSn Lasers,” IEEE Electron Device Lett. 37, 1307–1310 (2016).
[Crossref]

J. Petykiewicz, D. Nam, D. S. Sukhdeo, S. Gupta, S. Buckley, A. Y. Piggott, J. Vučković, and K. C. Saraswat, “Direct bandgap light emission from strained germanium nanowires coupled with high-q nanophotonic cavities,” Nano Letters 16, 2168–2173 (2016).
[Crossref] [PubMed]

D. S. Sukhdeo, D. Nam, J.-H. Kang, M. L. Brongersma, and K. C. Saraswat, “Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics,” Opt. Express 23, 16740 (2015).
[Crossref] [PubMed]

D. S. Sukhdeo, D. Nam, J.-H. Kang, M. L. Brongersma, and K. C. Saraswat, “Direct bandgap germanium-on-silicon inferred from 57% <100> uniaxial tensile strain [Invited],” Photon. Res. 2, A8 (2014).
[Crossref]

Naseem, H. A.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Naumenko, O.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Nikitin, A.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Orphal, J.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Ossikovski, R.

M. El Kurdi, M. Prost, A. Ghrib, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, and P. Boucaud, “Direct band gap germanium microdisks obtained with silicon nitride stressor layers,” ACS Photonics 3, 443–448 (2016).
[Crossref]

A. Ghrib, M. El Kurdi, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, M. Chaigneau, R. Ossikovski, I. Sagnes, and P. Boucaud, “All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities,” Adv. Opt. Mater. 3, 353–358 (2015).
[Crossref]

Paiella, R.

J. R. Sanchez-Perez, Boztug, Cicek, Chen, Feng, F. F. Sudradjat, D. M. Paskiewicz, RB Jacobson, M. G. Lagally, and R. Paiella, “Direct-bandgap light-emitting germanium in tensilely strained nanomembranes,” Proc. Nat. Acad. Sci. 108, 18893–18898 (2011).
[Crossref] [PubMed]

Paskiewicz, D. M.

J. R. Sanchez-Perez, Boztug, Cicek, Chen, Feng, F. F. Sudradjat, D. M. Paskiewicz, RB Jacobson, M. G. Lagally, and R. Paiella, “Direct-bandgap light-emitting germanium in tensilely strained nanomembranes,” Proc. Nat. Acad. Sci. 108, 18893–18898 (2011).
[Crossref] [PubMed]

Patchett, D.

F. Pezzoli, A. Giorgioni, D. Patchett, and M. Myronov, “Temperature-dependent photoluminescence characteristics of GeSn epitaxial layers,” ACS Photonics 3, 2004–2009 (2016).
[Crossref]

Patel, N.

Paul, D.

Paul, D. J.

R. Millar, K. Gallacher, J. Frigerio, A. Ballabio, A. Bashir, I. MacLaren, G. Isella, and D. J. Paul, “Analysis of Ge micro-cavities with in-plane tensile strains above 2 %,” Opt. Express 24, 4365–4374 (2016).
[Crossref]

F. Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella, D. J. Paul, and L. Miglio, “Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates,” Applied Physics Letters 108, 262103 (2016).
[Crossref]

D. J. Paul, “Silicon photonics: a bright future?” Electron. Lett. 45, 582–584 (2009).
[Crossref]

Perevalov, V.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Perrin, A.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Petykiewicz, J.

J. Petykiewicz, D. Nam, D. S. Sukhdeo, S. Gupta, S. Buckley, A. Y. Piggott, J. Vučković, and K. C. Saraswat, “Direct bandgap light emission from strained germanium nanowires coupled with high-q nanophotonic cavities,” Nano Letters 16, 2168–2173 (2016).
[Crossref] [PubMed]

Pezzoli, F.

F. Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella, D. J. Paul, and L. Miglio, “Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates,” Applied Physics Letters 108, 262103 (2016).
[Crossref]

F. Pezzoli, A. Giorgioni, D. Patchett, and M. Myronov, “Temperature-dependent photoluminescence characteristics of GeSn epitaxial layers,” ACS Photonics 3, 2004–2009 (2016).
[Crossref]

F. Pezzoli, F. Isa, G. Isella, C. Falub, T. Kreiliger, M. Salvalaglio, R. Bergamaschini, E. Grilli, M. Guzzi, H. von Känel, and L. Miglio, “Ge Crystals on Si Show Their Light,” Phys. Rev. Appl. 1, 044005 (2014).
[Crossref]

Pham, T.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Picardi, G.

M. El Kurdi, M. Prost, A. Ghrib, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, and P. Boucaud, “Direct band gap germanium microdisks obtained with silicon nitride stressor layers,” ACS Photonics 3, 443–448 (2016).
[Crossref]

Piggott, A. Y.

J. Petykiewicz, D. Nam, D. S. Sukhdeo, S. Gupta, S. Buckley, A. Y. Piggott, J. Vučković, and K. C. Saraswat, “Direct bandgap light emission from strained germanium nanowires coupled with high-q nanophotonic cavities,” Nano Letters 16, 2168–2173 (2016).
[Crossref] [PubMed]

Polovtseva, E.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Prost, M.

M. El Kurdi, M. Prost, A. Ghrib, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, and P. Boucaud, “Direct band gap germanium microdisks obtained with silicon nitride stressor layers,” ACS Photonics 3, 443–448 (2016).
[Crossref]

A. Ghrib, M. El Kurdi, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, M. Chaigneau, R. Ossikovski, I. Sagnes, and P. Boucaud, “All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities,” Adv. Opt. Mater. 3, 353–358 (2015).
[Crossref]

A. Ghrib, M. E. Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

Quinde, R.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Reich, C.

Richard, C.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Romagnoli, M.

Rothman, L.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Roy, R. L.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Sagnes, I.

M. El Kurdi, M. Prost, A. Ghrib, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, and P. Boucaud, “Direct band gap germanium microdisks obtained with silicon nitride stressor layers,” ACS Photonics 3, 443–448 (2016).
[Crossref]

A. Ghrib, M. El Kurdi, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, M. Chaigneau, R. Ossikovski, I. Sagnes, and P. Boucaud, “All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities,” Adv. Opt. Mater. 3, 353–358 (2015).
[Crossref]

A. Ghrib, M. E. Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

Salvalaglio, M.

F. Pezzoli, F. Isa, G. Isella, C. Falub, T. Kreiliger, M. Salvalaglio, R. Bergamaschini, E. Grilli, M. Guzzi, H. von Känel, and L. Miglio, “Ge Crystals on Si Show Their Light,” Phys. Rev. Appl. 1, 044005 (2014).
[Crossref]

Samarelli, A.

Sanchez, E.

S. Gupta, R. Chen, Y. C. Huang, Y. Kim, E. Sanchez, J. S. Harris, and K. C. Saraswat, “Highly selective dry etching of germanium over germanium-tin (Ge1−x Snx): A novel route for Ge1−x Snx nanostructure fabrication,” Nano Lett. 13, 3783–3790 (2013).
[Crossref] [PubMed]

Sanchez-Perez, J. R.

J. R. Sanchez-Perez, Boztug, Cicek, Chen, Feng, F. F. Sudradjat, D. M. Paskiewicz, RB Jacobson, M. G. Lagally, and R. Paiella, “Direct-bandgap light-emitting germanium in tensilely strained nanomembranes,” Proc. Nat. Acad. Sci. 108, 18893–18898 (2011).
[Crossref] [PubMed]

Saraswat, K.

D. Sukhdeo, Y. Kim, S. Gupta, K. Saraswat, B. Dutt, and D. Nam, “Theoretical Modeling for the Interaction of Tin Alloying with N-Type Doping and Tensile Strain for GeSn Lasers,” IEEE Electron Device Lett. 37, 1307–1310 (2016).
[Crossref]

Saraswat, K. C.

J. Petykiewicz, D. Nam, D. S. Sukhdeo, S. Gupta, S. Buckley, A. Y. Piggott, J. Vučković, and K. C. Saraswat, “Direct bandgap light emission from strained germanium nanowires coupled with high-q nanophotonic cavities,” Nano Letters 16, 2168–2173 (2016).
[Crossref] [PubMed]

D. S. Sukhdeo, D. Nam, J.-H. Kang, M. L. Brongersma, and K. C. Saraswat, “Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics,” Opt. Express 23, 16740 (2015).
[Crossref] [PubMed]

D. S. Sukhdeo, D. Nam, J.-H. Kang, M. L. Brongersma, and K. C. Saraswat, “Direct bandgap germanium-on-silicon inferred from 57% <100> uniaxial tensile strain [Invited],” Photon. Res. 2, A8 (2014).
[Crossref]

S. Gupta, R. Chen, Y. C. Huang, Y. Kim, E. Sanchez, J. S. Harris, and K. C. Saraswat, “Highly selective dry etching of germanium over germanium-tin (Ge1−x Snx): A novel route for Ge1−x Snx nanostructure fabrication,” Nano Lett. 13, 3783–3790 (2013).
[Crossref] [PubMed]

S. Gupta, R. Chen, J. S. Harris, and K. C. Saraswat, “Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment,” Appl. Phys. Lett. 103, 10–14 (2013).

Sauvage, S.

M. El Kurdi, M. Prost, A. Ghrib, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, and P. Boucaud, “Direct band gap germanium microdisks obtained with silicon nitride stressor layers,” ACS Photonics 3, 443–448 (2016).
[Crossref]

A. Ghrib, M. El Kurdi, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, M. Chaigneau, R. Ossikovski, I. Sagnes, and P. Boucaud, “All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities,” Adv. Opt. Mater. 3, 353–358 (2015).
[Crossref]

A. Ghrib, M. E. Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

Schiefler, G.

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7, 466–472 (2013).
[Crossref]

Schroeder, T.

Schulte-Braucks, C.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

Shen, Z.

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

Sigg, H.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7, 466–472 (2013).
[Crossref]

Smith, M.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Soref, R.

R. Soref, “Mid-infrared photonics in silicon and germanium,” Nat. Photonics 4, 495–497 (2010).
[Crossref]

Soref, R. A.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Spolenak, R.

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7, 466–472 (2013).
[Crossref]

Stange, D.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

D. Stange, S. Wirths, N. von den Driesch, G. Mussler, T. Stoica, Z. Ikonic, J. M. Hartmann, S. Mantl, D. Grützmacher, and D. Buca, “Optical Transitions in Direct-Bandgap Ge1−x Snx Alloys,” ACS Photonics 2, 1539–1545 (2015).
[Crossref]

Starikova, E.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Stoica, T.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]

D. Stange, S. Wirths, N. von den Driesch, G. Mussler, T. Stoica, Z. Ikonic, J. M. Hartmann, S. Mantl, D. Grützmacher, and D. Buca, “Optical Transitions in Direct-Bandgap Ge1−x Snx Alloys,” ACS Photonics 2, 1539–1545 (2015).
[Crossref]

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, “Tensely strained GeSn alloys as optical gain media,” Appl. Phys. Lett. 103, 0–5 (2013).
[Crossref]

Stoney, G. G.

G. G. Stoney, “The tension of metallic films deposited by electrolysis,” Proc. R. Soc. London, Ser. A 82, 172–175 (1909).
[Crossref]

Sudradjat, F. F.

J. R. Sanchez-Perez, Boztug, Cicek, Chen, Feng, F. F. Sudradjat, D. M. Paskiewicz, RB Jacobson, M. G. Lagally, and R. Paiella, “Direct-bandgap light-emitting germanium in tensilely strained nanomembranes,” Proc. Nat. Acad. Sci. 108, 18893–18898 (2011).
[Crossref] [PubMed]

Suess, M. J.

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7, 466–472 (2013).
[Crossref]

Sukhdeo, D.

D. Sukhdeo, Y. Kim, S. Gupta, K. Saraswat, B. Dutt, and D. Nam, “Theoretical Modeling for the Interaction of Tin Alloying with N-Type Doping and Tensile Strain for GeSn Lasers,” IEEE Electron Device Lett. 37, 1307–1310 (2016).
[Crossref]

Sukhdeo, D. S.

Sun, G.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Sun, L.

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

Sun, X.

Sung, K.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Tashkun, S.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Tatam, R. P.

J. Hodgkinson and R. P. Tatam, “Optical gas sensing: a review,” Meas. Sci. Technol. 24, 012004 (2013).
[Crossref]

Tennyson, J.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Tiedemann, A. T.

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, “Tensely strained GeSn alloys as optical gain media,” Appl. Phys. Lett. 103, 0–5 (2013).
[Crossref]

Tillack, B.

Tolle, J.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Toon, G.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Tyuterev, V.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Virgilio, M.

von den Driesch, N.

D. Stange, S. Wirths, N. von den Driesch, G. Mussler, T. Stoica, Z. Ikonic, J. M. Hartmann, S. Mantl, D. Grützmacher, and D. Buca, “Optical Transitions in Direct-Bandgap Ge1−x Snx Alloys,” ACS Photonics 2, 1539–1545 (2015).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]

von Känel, H.

F. Pezzoli, F. Isa, G. Isella, C. Falub, T. Kreiliger, M. Salvalaglio, R. Bergamaschini, E. Grilli, M. Guzzi, H. von Känel, and L. Miglio, “Ge Crystals on Si Show Their Light,” Phys. Rev. Appl. 1, 044005 (2014).
[Crossref]

Vuckovic, J.

J. Petykiewicz, D. Nam, D. S. Sukhdeo, S. Gupta, S. Buckley, A. Y. Piggott, J. Vučković, and K. C. Saraswat, “Direct bandgap light emission from strained germanium nanowires coupled with high-q nanophotonic cavities,” Nano Letters 16, 2168–2173 (2016).
[Crossref] [PubMed]

Wagner, G.

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Wang, W.

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

Wirths, S.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]

D. Stange, S. Wirths, N. von den Driesch, G. Mussler, T. Stoica, Z. Ikonic, J. M. Hartmann, S. Mantl, D. Grützmacher, and D. Buca, “Optical Transitions in Direct-Bandgap Ge1−x Snx Alloys,” ACS Photonics 2, 1539–1545 (2015).
[Crossref]

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, “Tensely strained GeSn alloys as optical gain media,” Appl. Phys. Lett. 103, 0–5 (2013).
[Crossref]

Witzens, J.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

Yamamoto, Y.

Yeo, Y.-C.

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

Yu, S.-Q.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Zabel, T.

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

Zhou, Y.

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Zollner, S.

R. Hickey, N. Fernando, S. Zollner, J. Hart, R. Hazbun, and J. Kolodzey, “Properties of pseudomorphic and relaxed germanium1−x tinx alloys (x < 0.185) grown by MBE,” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, 021205 (2017).

ACS Photonics (5)

M. El Kurdi, M. Prost, A. Ghrib, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, and P. Boucaud, “Direct band gap germanium microdisks obtained with silicon nitride stressor layers,” ACS Photonics 3, 443–448 (2016).
[Crossref]

F. Pezzoli, A. Giorgioni, D. Patchett, and M. Myronov, “Temperature-dependent photoluminescence characteristics of GeSn epitaxial layers,” ACS Photonics 3, 2004–2009 (2016).
[Crossref]

D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. V. D. Driesch, G. Mussler, T. Zabel, T. Stoica, J.-M. Hartmann, S. Mantl, Z. Ikonic, D. Grützmacher, H. Sigg, J. Witzens, and D. Buca, “Optically Pumped GeSn Microdisk Lasers on Si,” ACS Photonics 3, 1279–1285 (2016).
[Crossref]

D. Stange, S. Wirths, N. von den Driesch, G. Mussler, T. Stoica, Z. Ikonic, J. M. Hartmann, S. Mantl, D. Grützmacher, and D. Buca, “Optical Transitions in Direct-Bandgap Ge1−x Snx Alloys,” ACS Photonics 2, 1539–1545 (2015).
[Crossref]

C. S. Fenrich, X. Chen, R. Chen, Y. C. Huang, H. Chung, M. Y. Kao, Y. Huo, T. I. Kamins, and J. S. Harris, “Strained Pseudomorphic Ge1−x Snx Multiple Quantum Well Microdisk Using SiNy Stressor Layer,” ACS Photonics 3, 2231–2236 (2016).
[Crossref]

Adv. Opt. Mater. (1)

A. Ghrib, M. El Kurdi, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, M. Chaigneau, R. Ossikovski, I. Sagnes, and P. Boucaud, “All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities,” Adv. Opt. Mater. 3, 353–358 (2015).
[Crossref]

Appl. Phys. Lett. (4)

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, and D. Buca, “Tensely strained GeSn alloys as optical gain media,” Appl. Phys. Lett. 103, 0–5 (2013).
[Crossref]

S. Gupta, R. Chen, J. S. Harris, and K. C. Saraswat, “Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment,” Appl. Phys. Lett. 103, 10–14 (2013).

A. Ghrib, M. E. Kurdi, M. de Kersauson, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, and P. Boucaud, “Tensile-strained germanium microdisks,” Appl. Phys. Lett. 102, 221112 (2013).
[Crossref]

S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh, J. Liu, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, “An optically pumped 2.5 µm GeSn laser on Si operating at 110 K,” Appl. Phys. Lett. 109, 171105 (2016).
[Crossref]

Applied Physics Letters (1)

F. Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella, D. J. Paul, and L. Miglio, “Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates,” Applied Physics Letters 108, 262103 (2016).
[Crossref]

ECS J. Solid State Sci. Technol. (1)

R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, J. S. Harris, R. Cheng, W. Wang, X. Gong, L. Sun, P. Guo, H. Hu, Z. Shen, G. Han, and Y.-C. Yeo, “Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study,” ECS J. Solid State Sci. Technol. 2, P138–P145 (2013).
[Crossref]

Electron. Lett. (1)

D. J. Paul, “Silicon photonics: a bright future?” Electron. Lett. 45, 582–584 (2009).
[Crossref]

IEEE Electron Device Lett. (1)

D. Sukhdeo, Y. Kim, S. Gupta, K. Saraswat, B. Dutt, and D. Nam, “Theoretical Modeling for the Interaction of Tin Alloying with N-Type Doping and Tensile Strain for GeSn Lasers,” IEEE Electron Device Lett. 37, 1307–1310 (2016).
[Crossref]

J. Appl. Phys. (1)

M. V. Fischetti and S. E. Laux, “Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys,” J. Appl. Phys. 80, 2234 (1996).
[Crossref]

Journal of Quantitative Spectroscopy and Radiative Transfer (1)

L. Rothman, I. Gordon, Y. Babikov, A. Barbe, D. C. Benner, P. Bernath, M. Birk, L. Bizzocchi, V. Boudon, L. Brown, A. Campargue, K. Chance, E. Cohen, L. Coudert, V. Devi, B. Drouin, A. Fayt, J.-M. Flaud, R. Gamache, J. Harrison, J.-M. Hartmann, C. Hill, J. Hodges, D. Jacquemart, A. Jolly, J. Lamouroux, R. L. Roy, G. Li, D. Long, O. Lyulin, C. Mackie, S. Massie, S. Mikhailenko, H. Mijller, O. Naumenko, A. Nikitin, J. Orphal, V. Perevalov, A. Perrin, E. Polovtseva, C. Richard, M. Smith, E. Starikova, K. Sung, S. Tashkun, J. Tennyson, G. Toon, V. Tyuterev, and G. Wagner, “The hitran2012 molecular spectroscopic database,” Journal of Quantitative Spectroscopy and Radiative Transfer 130, 4–50 (2013).
[Crossref]

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena (1)

R. Hickey, N. Fernando, S. Zollner, J. Hart, R. Hazbun, and J. Kolodzey, “Properties of pseudomorphic and relaxed germanium1−x tinx alloys (x < 0.185) grown by MBE,” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, 021205 (2017).

Meas. Sci. Technol. (1)

J. Hodgkinson and R. P. Tatam, “Optical gas sensing: a review,” Meas. Sci. Technol. 24, 012004 (2013).
[Crossref]

Nano Lett. (1)

S. Gupta, R. Chen, Y. C. Huang, Y. Kim, E. Sanchez, J. S. Harris, and K. C. Saraswat, “Highly selective dry etching of germanium over germanium-tin (Ge1−x Snx): A novel route for Ge1−x Snx nanostructure fabrication,” Nano Lett. 13, 3783–3790 (2013).
[Crossref] [PubMed]

Nano Letters (1)

J. Petykiewicz, D. Nam, D. S. Sukhdeo, S. Gupta, S. Buckley, A. Y. Piggott, J. Vučković, and K. C. Saraswat, “Direct bandgap light emission from strained germanium nanowires coupled with high-q nanophotonic cavities,” Nano Letters 16, 2168–2173 (2016).
[Crossref] [PubMed]

Nat. Photonics (3)

M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7, 466–472 (2013).
[Crossref]

S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]

R. Soref, “Mid-infrared photonics in silicon and germanium,” Nat. Photonics 4, 495–497 (2010).
[Crossref]

Opt. Express (5)

Opt. Lett. (1)

Photon. Res. (1)

Phys. Rev. Appl. (1)

F. Pezzoli, F. Isa, G. Isella, C. Falub, T. Kreiliger, M. Salvalaglio, R. Bergamaschini, E. Grilli, M. Guzzi, H. von Känel, and L. Miglio, “Ge Crystals on Si Show Their Light,” Phys. Rev. Appl. 1, 044005 (2014).
[Crossref]

Proc. Nat. Acad. Sci. (1)

J. R. Sanchez-Perez, Boztug, Cicek, Chen, Feng, F. F. Sudradjat, D. M. Paskiewicz, RB Jacobson, M. G. Lagally, and R. Paiella, “Direct-bandgap light-emitting germanium in tensilely strained nanomembranes,” Proc. Nat. Acad. Sci. 108, 18893–18898 (2011).
[Crossref] [PubMed]

Proc. R. Soc. London, Ser. A (1)

G. G. Stoney, “The tension of metallic films deposited by electrolysis,” Proc. R. Soc. London, Ser. A 82, 172–175 (1909).
[Crossref]

Other (1)

G. T. Reed, ed., Silicon Photonics: The State of the Art (John Wiley & Sons Ltd., 2008).
[Crossref]

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (7)

Fig. 1
Fig. 1 a) A high resolution transmission electron microscope image showing the interface between a GeSn epilayer and a Ge relaxed buffer. b) X-ray diffraction reciprocal space map (XRD-RSM) of a pseudomorphic Ge0.916Sn0.084 layer on a Ge buffer, on a (001) Si substrate.
Fig. 2
Fig. 2 a) Low temperature photoluminescence from 40 nm thick GeSn epilayers on 650 nm thick Ge buffers on (100) Si. a) 8.4 % Sn and (b) 10.7 % Sn concentrations. An artifact due to the optical chopper has been removed from the spectra.
Fig. 3
Fig. 3 a) A scanning electron microscope (SEM) image of a dry etched GeSn/Ge disk array. b) GeSn/Ge disk array following a wet etch in tetramethylammonium hydroxide to etch the Si. c) A false coloured SEM image of a 3 µm diameter GeSn/Ge disk, highlighting the materials the disk comprises. d) An SEM image of a high stress silicon nitride coated disk.
Fig. 4
Fig. 4 a) Photoluminescence (PL) from Ge0.893Sn0.107 alloys. Compares the PL from bare undercut disks, to disks with and without Al2O3 passivation with SiN stressors. b) PL from strained Ge0.893Sn0.107 disk, with silicon nitride transmission over-layed. The transmission is scaled and offset for clarity. The dip shown at ∼ 3 µm relates to the N-H vibration.
Fig. 5
Fig. 5 a) Photoluminescence (PL) from Ge0.917Sn0.084 and Ge0.893Sn0.107 microdisks with and without SiN stressor layers, for a range of disk diameters. The calculated Γ- to L-valley energy difference is shown for each diameter and Sn concentration, along with the measured strain by Raman spectroscopy. b) Raman maps of 3 µm diameter GeSn/Ge disks with SiN stressors. Both Ge0.917Sn0.084 and Ge0.893Sn0.107 3 µm diameter microdisks are shown.
Fig. 6
Fig. 6 a) Integrated photoluminescence (PL) intensity of Ge0.893Sn0.107 layers. A bare 3 µm, unpassivated disk is shown, as well as the as grown epilayer, and the strained Ge0.893Sn0.107 disk with ∼ 0.45% tensile strain. b) PL intensity colour map, as a function of wavelength and temperature, for the 3 µm Ge0.893Sn0.107 disks with ∼ 0.45 % tensile strain.
Fig. 7
Fig. 7 Left - Photoluminescence of the long wavelength emission from Ge0.893Sn0.107 disks. Right - Simulation of the spectra having propagated through 5 mm of 5 % methane (CH4) at atmospheric pressure.

Metrics