Abstract

The drift velocity for holes is strongly influenced by the electric field in the p-type hole injection layer for III-nitride based deep ultraviolet light-emitting diodes (DUV LEDs). In this work, we propose an electric-field reservoir (EFR) consisting of a p-AlxGa1-xN/p-GaN architecture to facilitate the hole injection and improve the internal quantum efficiency (IQE). The p-AlxGa1-xN layer in the EFR can well reserve the electric field that can moderately adjust the drift velocity and the kinetic energy for holes. As a result, we are able to enhance the thermionic emission for holes to cross over the p-EBL with a high Al composition provided that the composition in the p-AlxGa1-xN layer is properly optimized to avoid a complete hole depletion therein.

© 2017 Optical Society of America

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References

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  1. E. F. Schubert, “Light-Emitting Diodes”, 2nd edition (Cambridge, 2006).
  2. S. T. Tan, X. W. Sun, H. V. Demir, and S. P. Denbaars, “Advances in the LED materials and architectures for energy-saving solid-state lighting toward “lighting revolution”,” IEEE Photonics J. 4(2), 613–619 (2012).
    [Crossref]
  3. H. Zhao, G. Liu, and X. H. Li, “III-Nitride Photonics,” IEEE Photonics J. 2(2), 241–248 (2010).
    [Crossref]
  4. A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2(2), 77–84 (2008).
    [Crossref]
  5. M. S. Shur and R. Gaska, “III-nitride based deep ultraviolet light sources,” Proc. SPIE 6894, 689419 (2008).
  6. M. Katsuragawa, S. Sota, M. Komori, C. Anbe, T. Takeuchi, H. Sakai, H. Amano, and I. Akasaki, “Thermal ionization energy of Si and Mg in AlGaN,” J. Cryst. Growth 189, 528–531 (1998).
    [Crossref]
  7. Z.-H. Zhang, S. Tiam Tan, Z. Kyaw, W. Liu, Y. Ji, Z. Ju, X. Zhang, X. Wei Sun, and H. Volkan Demir, “p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas,” Appl. Phys. Lett. 103(26), 263501 (2013).
    [Crossref]
  8. L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97(06), 062103 (2010).
    [Crossref]
  9. J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures,” Science 327(5961), 60–64 (2010).
    [Crossref] [PubMed]
  10. J. Chang, D. Chen, J. Xue, K. Dong, B. Liu, H. Lu, R. Zhang, and Y. Zheng, “AlGaN-based multiple quantum well deep ultraviolet light-emitting diodes with polarization doping,” IEEE Photonics J. 8(1), 1600207 (2016).
    [Crossref]
  11. S. Wang, Y. A. Yin, H. Gu, N. Wang, and L. Liu, “Graded AlGaN/AlGaN superlattice insert layer improved performance of AlGaN-based deep ultraviolet light-emitting diodes,” J. Disp. Technol. 12(10), 1112–1116 (2016).
    [Crossref]
  12. S. Q. Liu, C. Y. Ye, X. F. Cai, S. P. Li, W. Lin, and J. Y. Kang, “Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer,” Appl. Phys., A Mater. Sci. Process. 122(5), 527 (2016).
    [Crossref]
  13. H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
    [Crossref]
  14. S. M. Sze, “Physics of Semiconductor Devices”, 2nd edition (John Wiley & Sons, Inc., 1981).
  15. Z.-H. Zhang, W. Liu, S. T. Tan, Y. Ji, L. Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “A hole accelerator for InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 105(15), 153503 (2014).
    [Crossref]
  16. Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “On the hole accelerator for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108(15), 151105 (2016).
    [Crossref]
  17. J. R. Chen, T. C. Lu, H. C. Kuo, K. L. Fang, K. F. Huang, C. W. Kuo, C. J. Chang, C. T. Kuo, and S. C. Wang, “Study of InGaN–GaN light-emitting diodes with different last barrier thicknesses,” IEEE Photonics Technol. Lett. 22(12), 860–862 (2010).
    [Crossref]
  18. Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
    [Crossref] [PubMed]
  19. Z.-H. Zhang, Y. Ji, W. Liu, S. Tiam Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. Wei Sun, and H. Volkan Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(07), 073511 (2014).
    [Crossref]
  20. Y. K. Kuo, J. Y. Chang, F. M. Chen, Y. H. Shih, and H.-T. Chang, “Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes,” IEEE J. Quantum Electron. 52(4), 3300105 (2016).
    [Crossref]
  21. J. Piprek, “Efficiency droop in nitride-based light-emitting diodes,” Phys. Status Solidi 207(10), 2217–2225 (2010).
    [Crossref]
  22. K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
    [Crossref]
  23. H. Y. Ryu, I. G. Choi, H. S. Choi, and J. I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6(6), 062101 (2013).
    [Crossref]
  24. A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, and E. J. U. Group, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
    [Crossref]
  25. V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80(7), 1204–1206 (2002).
    [Crossref]
  26. A. Adaine, S. O. S. Hamady, and N. Fressengeas, “Simulation study of a new InGaN p-layer free Schottky based solar cell,” Superlattices Microstruct. 96, 121–133 (2016).
    [Crossref]
  27. J. F. Muth, J. D. Brown, M. A. L. Johnson, Z. Yu, R. M. Kolbas, J. W. Cook, and J. F. Schetzina, “Absorption coefficient and refractive Index of GaN, AIN and AlGaN alloys,” MRS Internet J. Nitride Semicond. Res. 4S1, G5.2(1999).
  28. J. Piprek, R. K. Sink, M. A. Hansen, J. E. Bowers, and S. P. DenBaars, “Simulation and optimization of 420-nm InGaN/GaN laser diodes,” Proc. SPIE 3944, 28 (2000).
    [Crossref]
  29. Z.-H. Zhang, Y. Zhang, W. Bi, H. V. Demir, and X. W. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates,” Phys. Status Solidi 213(12), 3078–3102 (2016).
    [Crossref]
  30. Z.-H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,” Opt. Express 21(4), 4958–4969 (2013).
    [Crossref] [PubMed]

2016 (7)

J. Chang, D. Chen, J. Xue, K. Dong, B. Liu, H. Lu, R. Zhang, and Y. Zheng, “AlGaN-based multiple quantum well deep ultraviolet light-emitting diodes with polarization doping,” IEEE Photonics J. 8(1), 1600207 (2016).
[Crossref]

S. Wang, Y. A. Yin, H. Gu, N. Wang, and L. Liu, “Graded AlGaN/AlGaN superlattice insert layer improved performance of AlGaN-based deep ultraviolet light-emitting diodes,” J. Disp. Technol. 12(10), 1112–1116 (2016).
[Crossref]

S. Q. Liu, C. Y. Ye, X. F. Cai, S. P. Li, W. Lin, and J. Y. Kang, “Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer,” Appl. Phys., A Mater. Sci. Process. 122(5), 527 (2016).
[Crossref]

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “On the hole accelerator for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108(15), 151105 (2016).
[Crossref]

Y. K. Kuo, J. Y. Chang, F. M. Chen, Y. H. Shih, and H.-T. Chang, “Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes,” IEEE J. Quantum Electron. 52(4), 3300105 (2016).
[Crossref]

A. Adaine, S. O. S. Hamady, and N. Fressengeas, “Simulation study of a new InGaN p-layer free Schottky based solar cell,” Superlattices Microstruct. 96, 121–133 (2016).
[Crossref]

Z.-H. Zhang, Y. Zhang, W. Bi, H. V. Demir, and X. W. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates,” Phys. Status Solidi 213(12), 3078–3102 (2016).
[Crossref]

2014 (3)

Z.-H. Zhang, W. Liu, S. T. Tan, Y. Ji, L. Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “A hole accelerator for InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 105(15), 153503 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z.-H. Zhang, Y. Ji, W. Liu, S. Tiam Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. Wei Sun, and H. Volkan Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(07), 073511 (2014).
[Crossref]

2013 (3)

Z.-H. Zhang, S. Tiam Tan, Z. Kyaw, W. Liu, Y. Ji, Z. Ju, X. Zhang, X. Wei Sun, and H. Volkan Demir, “p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas,” Appl. Phys. Lett. 103(26), 263501 (2013).
[Crossref]

Z.-H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,” Opt. Express 21(4), 4958–4969 (2013).
[Crossref] [PubMed]

H. Y. Ryu, I. G. Choi, H. S. Choi, and J. I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6(6), 062101 (2013).
[Crossref]

2012 (1)

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. Denbaars, “Advances in the LED materials and architectures for energy-saving solid-state lighting toward “lighting revolution”,” IEEE Photonics J. 4(2), 613–619 (2012).
[Crossref]

2010 (6)

H. Zhao, G. Liu, and X. H. Li, “III-Nitride Photonics,” IEEE Photonics J. 2(2), 241–248 (2010).
[Crossref]

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97(06), 062103 (2010).
[Crossref]

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures,” Science 327(5961), 60–64 (2010).
[Crossref] [PubMed]

J. R. Chen, T. C. Lu, H. C. Kuo, K. L. Fang, K. F. Huang, C. W. Kuo, C. J. Chang, C. T. Kuo, and S. C. Wang, “Study of InGaN–GaN light-emitting diodes with different last barrier thicknesses,” IEEE Photonics Technol. Lett. 22(12), 860–862 (2010).
[Crossref]

J. Piprek, “Efficiency droop in nitride-based light-emitting diodes,” Phys. Status Solidi 207(10), 2217–2225 (2010).
[Crossref]

2008 (2)

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2(2), 77–84 (2008).
[Crossref]

M. S. Shur and R. Gaska, “III-nitride based deep ultraviolet light sources,” Proc. SPIE 6894, 689419 (2008).

2006 (1)

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, and E. J. U. Group, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

2004 (1)

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[Crossref]

2002 (1)

V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80(7), 1204–1206 (2002).
[Crossref]

2000 (1)

J. Piprek, R. K. Sink, M. A. Hansen, J. E. Bowers, and S. P. DenBaars, “Simulation and optimization of 420-nm InGaN/GaN laser diodes,” Proc. SPIE 3944, 28 (2000).
[Crossref]

1998 (1)

M. Katsuragawa, S. Sota, M. Komori, C. Anbe, T. Takeuchi, H. Sakai, H. Amano, and I. Akasaki, “Thermal ionization energy of Si and Mg in AlGaN,” J. Cryst. Growth 189, 528–531 (1998).
[Crossref]

Adaine, A.

A. Adaine, S. O. S. Hamady, and N. Fressengeas, “Simulation study of a new InGaN p-layer free Schottky based solar cell,” Superlattices Microstruct. 96, 121–133 (2016).
[Crossref]

Akasaki, I.

M. Katsuragawa, S. Sota, M. Komori, C. Anbe, T. Takeuchi, H. Sakai, H. Amano, and I. Akasaki, “Thermal ionization energy of Si and Mg in AlGaN,” J. Cryst. Growth 189, 528–531 (1998).
[Crossref]

Amano, H.

M. Katsuragawa, S. Sota, M. Komori, C. Anbe, T. Takeuchi, H. Sakai, H. Amano, and I. Akasaki, “Thermal ionization energy of Si and Mg in AlGaN,” J. Cryst. Growth 189, 528–531 (1998).
[Crossref]

Ambacher, O.

V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80(7), 1204–1206 (2002).
[Crossref]

Anbe, C.

M. Katsuragawa, S. Sota, M. Komori, C. Anbe, T. Takeuchi, H. Sakai, H. Amano, and I. Akasaki, “Thermal ionization energy of Si and Mg in AlGaN,” J. Cryst. Growth 189, 528–531 (1998).
[Crossref]

Baker, T. J.

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, and E. J. U. Group, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

Balakrishnan, K.

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2(2), 77–84 (2008).
[Crossref]

Bernardini, F.

V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80(7), 1204–1206 (2002).
[Crossref]

Bi, W.

Z.-H. Zhang, Y. Zhang, W. Bi, H. V. Demir, and X. W. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates,” Phys. Status Solidi 213(12), 3078–3102 (2016).
[Crossref]

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “On the hole accelerator for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108(15), 151105 (2016).
[Crossref]

Bowers, J. E.

J. Piprek, R. K. Sink, M. A. Hansen, J. E. Bowers, and S. P. DenBaars, “Simulation and optimization of 420-nm InGaN/GaN laser diodes,” Proc. SPIE 3944, 28 (2000).
[Crossref]

Cai, X. F.

S. Q. Liu, C. Y. Ye, X. F. Cai, S. P. Li, W. Lin, and J. Y. Kang, “Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer,” Appl. Phys., A Mater. Sci. Process. 122(5), 527 (2016).
[Crossref]

Chang, C. J.

J. R. Chen, T. C. Lu, H. C. Kuo, K. L. Fang, K. F. Huang, C. W. Kuo, C. J. Chang, C. T. Kuo, and S. C. Wang, “Study of InGaN–GaN light-emitting diodes with different last barrier thicknesses,” IEEE Photonics Technol. Lett. 22(12), 860–862 (2010).
[Crossref]

Chang, H.-T.

Y. K. Kuo, J. Y. Chang, F. M. Chen, Y. H. Shih, and H.-T. Chang, “Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes,” IEEE J. Quantum Electron. 52(4), 3300105 (2016).
[Crossref]

Chang, J.

J. Chang, D. Chen, J. Xue, K. Dong, B. Liu, H. Lu, R. Zhang, and Y. Zheng, “AlGaN-based multiple quantum well deep ultraviolet light-emitting diodes with polarization doping,” IEEE Photonics J. 8(1), 1600207 (2016).
[Crossref]

Chang, J. Y.

Y. K. Kuo, J. Y. Chang, F. M. Chen, Y. H. Shih, and H.-T. Chang, “Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes,” IEEE J. Quantum Electron. 52(4), 3300105 (2016).
[Crossref]

Chen, D.

J. Chang, D. Chen, J. Xue, K. Dong, B. Liu, H. Lu, R. Zhang, and Y. Zheng, “AlGaN-based multiple quantum well deep ultraviolet light-emitting diodes with polarization doping,” IEEE Photonics J. 8(1), 1600207 (2016).
[Crossref]

Chen, F. M.

Y. K. Kuo, J. Y. Chang, F. M. Chen, Y. H. Shih, and H.-T. Chang, “Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes,” IEEE J. Quantum Electron. 52(4), 3300105 (2016).
[Crossref]

Chen, J. R.

J. R. Chen, T. C. Lu, H. C. Kuo, K. L. Fang, K. F. Huang, C. W. Kuo, C. J. Chang, C. T. Kuo, and S. C. Wang, “Study of InGaN–GaN light-emitting diodes with different last barrier thicknesses,” IEEE Photonics Technol. Lett. 22(12), 860–862 (2010).
[Crossref]

Choi, H. S.

H. Y. Ryu, I. G. Choi, H. S. Choi, and J. I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6(6), 062101 (2013).
[Crossref]

Choi, I. G.

H. Y. Ryu, I. G. Choi, H. S. Choi, and J. I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6(6), 062101 (2013).
[Crossref]

Demir, H. V.

Z.-H. Zhang, Y. Zhang, W. Bi, H. V. Demir, and X. W. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates,” Phys. Status Solidi 213(12), 3078–3102 (2016).
[Crossref]

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “On the hole accelerator for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108(15), 151105 (2016).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Y. Ji, L. Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “A hole accelerator for InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 105(15), 153503 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z.-H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,” Opt. Express 21(4), 4958–4969 (2013).
[Crossref] [PubMed]

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. Denbaars, “Advances in the LED materials and architectures for energy-saving solid-state lighting toward “lighting revolution”,” IEEE Photonics J. 4(2), 613–619 (2012).
[Crossref]

Denbaars, S. P.

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. Denbaars, “Advances in the LED materials and architectures for energy-saving solid-state lighting toward “lighting revolution”,” IEEE Photonics J. 4(2), 613–619 (2012).
[Crossref]

J. Piprek, R. K. Sink, M. A. Hansen, J. E. Bowers, and S. P. DenBaars, “Simulation and optimization of 420-nm InGaN/GaN laser diodes,” Proc. SPIE 3944, 28 (2000).
[Crossref]

Ding, K.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97(06), 062103 (2010).
[Crossref]

Dong, K.

J. Chang, D. Chen, J. Xue, K. Dong, B. Liu, H. Lu, R. Zhang, and Y. Zheng, “AlGaN-based multiple quantum well deep ultraviolet light-emitting diodes with polarization doping,” IEEE Photonics J. 8(1), 1600207 (2016).
[Crossref]

Duan, R. F.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97(06), 062103 (2010).
[Crossref]

Fang, K. L.

J. R. Chen, T. C. Lu, H. C. Kuo, K. L. Fang, K. F. Huang, C. W. Kuo, C. J. Chang, C. T. Kuo, and S. C. Wang, “Study of InGaN–GaN light-emitting diodes with different last barrier thicknesses,” IEEE Photonics Technol. Lett. 22(12), 860–862 (2010).
[Crossref]

Fiorentini, V.

V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80(7), 1204–1206 (2002).
[Crossref]

Fressengeas, N.

A. Adaine, S. O. S. Hamady, and N. Fressengeas, “Simulation study of a new InGaN p-layer free Schottky based solar cell,” Superlattices Microstruct. 96, 121–133 (2016).
[Crossref]

Gaska, R.

M. S. Shur and R. Gaska, “III-nitride based deep ultraviolet light sources,” Proc. SPIE 6894, 689419 (2008).

Geng, C.

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “On the hole accelerator for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108(15), 151105 (2016).
[Crossref]

Group, E. J. U.

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, and E. J. U. Group, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

Gu, H.

S. Wang, Y. A. Yin, H. Gu, N. Wang, and L. Liu, “Graded AlGaN/AlGaN superlattice insert layer improved performance of AlGaN-based deep ultraviolet light-emitting diodes,” J. Disp. Technol. 12(10), 1112–1116 (2016).
[Crossref]

Hamady, S. O. S.

A. Adaine, S. O. S. Hamady, and N. Fressengeas, “Simulation study of a new InGaN p-layer free Schottky based solar cell,” Superlattices Microstruct. 96, 121–133 (2016).
[Crossref]

Hansen, M. A.

J. Piprek, R. K. Sink, M. A. Hansen, J. E. Bowers, and S. P. DenBaars, “Simulation and optimization of 420-nm InGaN/GaN laser diodes,” Proc. SPIE 3944, 28 (2000).
[Crossref]

Hasanov, N.

Z.-H. Zhang, W. Liu, S. T. Tan, Y. Ji, L. Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “A hole accelerator for InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 105(15), 153503 (2014).
[Crossref]

Z.-H. Zhang, Y. Ji, W. Liu, S. Tiam Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. Wei Sun, and H. Volkan Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(07), 073511 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z.-H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,” Opt. Express 21(4), 4958–4969 (2013).
[Crossref] [PubMed]

Hirayama, H.

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

Huang, K. F.

J. R. Chen, T. C. Lu, H. C. Kuo, K. L. Fang, K. F. Huang, C. W. Kuo, C. J. Chang, C. T. Kuo, and S. C. Wang, “Study of InGaN–GaN light-emitting diodes with different last barrier thicknesses,” IEEE Photonics Technol. Lett. 22(12), 860–862 (2010).
[Crossref]

Jena, D.

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures,” Science 327(5961), 60–64 (2010).
[Crossref] [PubMed]

Ji, Y.

Z.-H. Zhang, W. Liu, S. T. Tan, Y. Ji, L. Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “A hole accelerator for InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 105(15), 153503 (2014).
[Crossref]

Z.-H. Zhang, Y. Ji, W. Liu, S. Tiam Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. Wei Sun, and H. Volkan Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(07), 073511 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z.-H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,” Opt. Express 21(4), 4958–4969 (2013).
[Crossref] [PubMed]

Z.-H. Zhang, S. Tiam Tan, Z. Kyaw, W. Liu, Y. Ji, Z. Ju, X. Zhang, X. Wei Sun, and H. Volkan Demir, “p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas,” Appl. Phys. Lett. 103(26), 263501 (2013).
[Crossref]

Jiang, H. X.

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[Crossref]

Ju, Z.

Z.-H. Zhang, Y. Ji, W. Liu, S. Tiam Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. Wei Sun, and H. Volkan Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(07), 073511 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z.-H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,” Opt. Express 21(4), 4958–4969 (2013).
[Crossref] [PubMed]

Z.-H. Zhang, S. Tiam Tan, Z. Kyaw, W. Liu, Y. Ji, Z. Ju, X. Zhang, X. Wei Sun, and H. Volkan Demir, “p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas,” Appl. Phys. Lett. 103(26), 263501 (2013).
[Crossref]

Kamata, N.

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

Kang, J. Y.

S. Q. Liu, C. Y. Ye, X. F. Cai, S. P. Li, W. Lin, and J. Y. Kang, “Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer,” Appl. Phys., A Mater. Sci. Process. 122(5), 527 (2016).
[Crossref]

Katona, T.

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2(2), 77–84 (2008).
[Crossref]

Katsuragawa, M.

M. Katsuragawa, S. Sota, M. Komori, C. Anbe, T. Takeuchi, H. Sakai, H. Amano, and I. Akasaki, “Thermal ionization energy of Si and Mg in AlGaN,” J. Cryst. Growth 189, 528–531 (1998).
[Crossref]

Khan, A.

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2(2), 77–84 (2008).
[Crossref]

Komori, M.

M. Katsuragawa, S. Sota, M. Komori, C. Anbe, T. Takeuchi, H. Sakai, H. Amano, and I. Akasaki, “Thermal ionization energy of Si and Mg in AlGaN,” J. Cryst. Growth 189, 528–531 (1998).
[Crossref]

Kuo, C. T.

J. R. Chen, T. C. Lu, H. C. Kuo, K. L. Fang, K. F. Huang, C. W. Kuo, C. J. Chang, C. T. Kuo, and S. C. Wang, “Study of InGaN–GaN light-emitting diodes with different last barrier thicknesses,” IEEE Photonics Technol. Lett. 22(12), 860–862 (2010).
[Crossref]

Kuo, C. W.

J. R. Chen, T. C. Lu, H. C. Kuo, K. L. Fang, K. F. Huang, C. W. Kuo, C. J. Chang, C. T. Kuo, and S. C. Wang, “Study of InGaN–GaN light-emitting diodes with different last barrier thicknesses,” IEEE Photonics Technol. Lett. 22(12), 860–862 (2010).
[Crossref]

Kuo, H. C.

J. R. Chen, T. C. Lu, H. C. Kuo, K. L. Fang, K. F. Huang, C. W. Kuo, C. J. Chang, C. T. Kuo, and S. C. Wang, “Study of InGaN–GaN light-emitting diodes with different last barrier thicknesses,” IEEE Photonics Technol. Lett. 22(12), 860–862 (2010).
[Crossref]

Kuo, Y. K.

Y. K. Kuo, J. Y. Chang, F. M. Chen, Y. H. Shih, and H.-T. Chang, “Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes,” IEEE J. Quantum Electron. 52(4), 3300105 (2016).
[Crossref]

Kyaw, Z.

Z.-H. Zhang, Y. Ji, W. Liu, S. Tiam Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. Wei Sun, and H. Volkan Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(07), 073511 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z.-H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,” Opt. Express 21(4), 4958–4969 (2013).
[Crossref] [PubMed]

Z.-H. Zhang, S. Tiam Tan, Z. Kyaw, W. Liu, Y. Ji, Z. Ju, X. Zhang, X. Wei Sun, and H. Volkan Demir, “p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas,” Appl. Phys. Lett. 103(26), 263501 (2013).
[Crossref]

Li, J.

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[Crossref]

Li, J. M.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97(06), 062103 (2010).
[Crossref]

Li, S. P.

S. Q. Liu, C. Y. Ye, X. F. Cai, S. P. Li, W. Lin, and J. Y. Kang, “Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer,” Appl. Phys., A Mater. Sci. Process. 122(5), 527 (2016).
[Crossref]

Li, X. H.

H. Zhao, G. Liu, and X. H. Li, “III-Nitride Photonics,” IEEE Photonics J. 2(2), 241–248 (2010).
[Crossref]

Li, Y. Y.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97(06), 062103 (2010).
[Crossref]

Lian, C.

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures,” Science 327(5961), 60–64 (2010).
[Crossref] [PubMed]

Lin, J. Y.

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[Crossref]

Lin, W.

S. Q. Liu, C. Y. Ye, X. F. Cai, S. P. Li, W. Lin, and J. Y. Kang, “Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer,” Appl. Phys., A Mater. Sci. Process. 122(5), 527 (2016).
[Crossref]

Liu, B.

J. Chang, D. Chen, J. Xue, K. Dong, B. Liu, H. Lu, R. Zhang, and Y. Zheng, “AlGaN-based multiple quantum well deep ultraviolet light-emitting diodes with polarization doping,” IEEE Photonics J. 8(1), 1600207 (2016).
[Crossref]

Liu, G.

H. Zhao, G. Liu, and X. H. Li, “III-Nitride Photonics,” IEEE Photonics J. 2(2), 241–248 (2010).
[Crossref]

Liu, L.

S. Wang, Y. A. Yin, H. Gu, N. Wang, and L. Liu, “Graded AlGaN/AlGaN superlattice insert layer improved performance of AlGaN-based deep ultraviolet light-emitting diodes,” J. Disp. Technol. 12(10), 1112–1116 (2016).
[Crossref]

Liu, S. Q.

S. Q. Liu, C. Y. Ye, X. F. Cai, S. P. Li, W. Lin, and J. Y. Kang, “Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer,” Appl. Phys., A Mater. Sci. Process. 122(5), 527 (2016).
[Crossref]

Liu, W.

Z.-H. Zhang, W. Liu, S. T. Tan, Y. Ji, L. Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “A hole accelerator for InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 105(15), 153503 (2014).
[Crossref]

Z.-H. Zhang, Y. Ji, W. Liu, S. Tiam Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. Wei Sun, and H. Volkan Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(07), 073511 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z.-H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,” Opt. Express 21(4), 4958–4969 (2013).
[Crossref] [PubMed]

Z.-H. Zhang, S. Tiam Tan, Z. Kyaw, W. Liu, Y. Ji, Z. Ju, X. Zhang, X. Wei Sun, and H. Volkan Demir, “p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas,” Appl. Phys. Lett. 103(26), 263501 (2013).
[Crossref]

Lu, H.

J. Chang, D. Chen, J. Xue, K. Dong, B. Liu, H. Lu, R. Zhang, and Y. Zheng, “AlGaN-based multiple quantum well deep ultraviolet light-emitting diodes with polarization doping,” IEEE Photonics J. 8(1), 1600207 (2016).
[Crossref]

Lu, S.

Z.-H. Zhang, Y. Ji, W. Liu, S. Tiam Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. Wei Sun, and H. Volkan Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(07), 073511 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Y. Ji, L. Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “A hole accelerator for InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 105(15), 153503 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Lu, T. C.

J. R. Chen, T. C. Lu, H. C. Kuo, K. L. Fang, K. F. Huang, C. W. Kuo, C. J. Chang, C. T. Kuo, and S. C. Wang, “Study of InGaN–GaN light-emitting diodes with different last barrier thicknesses,” IEEE Photonics Technol. Lett. 22(12), 860–862 (2010).
[Crossref]

Maeda, T.

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

Nakamura, S.

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, and E. J. U. Group, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

Nakarmi, M. L.

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[Crossref]

Nam, K. B.

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[Crossref]

Piprek, J.

J. Piprek, “Efficiency droop in nitride-based light-emitting diodes,” Phys. Status Solidi 207(10), 2217–2225 (2010).
[Crossref]

J. Piprek, R. K. Sink, M. A. Hansen, J. E. Bowers, and S. P. DenBaars, “Simulation and optimization of 420-nm InGaN/GaN laser diodes,” Proc. SPIE 3944, 28 (2000).
[Crossref]

Protasenko, V.

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures,” Science 327(5961), 60–64 (2010).
[Crossref] [PubMed]

Romanov, A. E.

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, and E. J. U. Group, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

Ryu, H. Y.

H. Y. Ryu, I. G. Choi, H. S. Choi, and J. I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6(6), 062101 (2013).
[Crossref]

Sakai, H.

M. Katsuragawa, S. Sota, M. Komori, C. Anbe, T. Takeuchi, H. Sakai, H. Amano, and I. Akasaki, “Thermal ionization energy of Si and Mg in AlGaN,” J. Cryst. Growth 189, 528–531 (1998).
[Crossref]

Shih, Y. H.

Y. K. Kuo, J. Y. Chang, F. M. Chen, Y. H. Shih, and H.-T. Chang, “Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes,” IEEE J. Quantum Electron. 52(4), 3300105 (2016).
[Crossref]

Shim, J. I.

H. Y. Ryu, I. G. Choi, H. S. Choi, and J. I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6(6), 062101 (2013).
[Crossref]

Shur, M. S.

M. S. Shur and R. Gaska, “III-nitride based deep ultraviolet light sources,” Proc. SPIE 6894, 689419 (2008).

Simon, J.

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures,” Science 327(5961), 60–64 (2010).
[Crossref] [PubMed]

Sink, R. K.

J. Piprek, R. K. Sink, M. A. Hansen, J. E. Bowers, and S. P. DenBaars, “Simulation and optimization of 420-nm InGaN/GaN laser diodes,” Proc. SPIE 3944, 28 (2000).
[Crossref]

Sota, S.

M. Katsuragawa, S. Sota, M. Komori, C. Anbe, T. Takeuchi, H. Sakai, H. Amano, and I. Akasaki, “Thermal ionization energy of Si and Mg in AlGaN,” J. Cryst. Growth 189, 528–531 (1998).
[Crossref]

Speck, J. S.

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, and E. J. U. Group, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

Sun, B. J.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97(06), 062103 (2010).
[Crossref]

Sun, X. W.

Z.-H. Zhang, Y. Zhang, W. Bi, H. V. Demir, and X. W. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates,” Phys. Status Solidi 213(12), 3078–3102 (2016).
[Crossref]

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “On the hole accelerator for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108(15), 151105 (2016).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Y. Ji, L. Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “A hole accelerator for InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 105(15), 153503 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z.-H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,” Opt. Express 21(4), 4958–4969 (2013).
[Crossref] [PubMed]

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. Denbaars, “Advances in the LED materials and architectures for energy-saving solid-state lighting toward “lighting revolution”,” IEEE Photonics J. 4(2), 613–619 (2012).
[Crossref]

Takeuchi, T.

M. Katsuragawa, S. Sota, M. Komori, C. Anbe, T. Takeuchi, H. Sakai, H. Amano, and I. Akasaki, “Thermal ionization energy of Si and Mg in AlGaN,” J. Cryst. Growth 189, 528–531 (1998).
[Crossref]

Tan, S. T.

Z.-H. Zhang, W. Liu, S. T. Tan, Y. Ji, L. Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “A hole accelerator for InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 105(15), 153503 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z.-H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,” Opt. Express 21(4), 4958–4969 (2013).
[Crossref] [PubMed]

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. Denbaars, “Advances in the LED materials and architectures for energy-saving solid-state lighting toward “lighting revolution”,” IEEE Photonics J. 4(2), 613–619 (2012).
[Crossref]

Tiam Tan, S.

Z.-H. Zhang, Y. Ji, W. Liu, S. Tiam Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. Wei Sun, and H. Volkan Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(07), 073511 (2014).
[Crossref]

Z.-H. Zhang, S. Tiam Tan, Z. Kyaw, W. Liu, Y. Ji, Z. Ju, X. Zhang, X. Wei Sun, and H. Volkan Demir, “p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas,” Appl. Phys. Lett. 103(26), 263501 (2013).
[Crossref]

Tsukada, Y.

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

Volkan Demir, H.

Z.-H. Zhang, Y. Ji, W. Liu, S. Tiam Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. Wei Sun, and H. Volkan Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(07), 073511 (2014).
[Crossref]

Z.-H. Zhang, S. Tiam Tan, Z. Kyaw, W. Liu, Y. Ji, Z. Ju, X. Zhang, X. Wei Sun, and H. Volkan Demir, “p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas,” Appl. Phys. Lett. 103(26), 263501 (2013).
[Crossref]

Wang, J. X.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97(06), 062103 (2010).
[Crossref]

Wang, L.

Z.-H. Zhang, W. Liu, S. T. Tan, Y. Ji, L. Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “A hole accelerator for InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 105(15), 153503 (2014).
[Crossref]

Wang, N.

S. Wang, Y. A. Yin, H. Gu, N. Wang, and L. Liu, “Graded AlGaN/AlGaN superlattice insert layer improved performance of AlGaN-based deep ultraviolet light-emitting diodes,” J. Disp. Technol. 12(10), 1112–1116 (2016).
[Crossref]

Wang, S.

S. Wang, Y. A. Yin, H. Gu, N. Wang, and L. Liu, “Graded AlGaN/AlGaN superlattice insert layer improved performance of AlGaN-based deep ultraviolet light-emitting diodes,” J. Disp. Technol. 12(10), 1112–1116 (2016).
[Crossref]

Wang, S. C.

J. R. Chen, T. C. Lu, H. C. Kuo, K. L. Fang, K. F. Huang, C. W. Kuo, C. J. Chang, C. T. Kuo, and S. C. Wang, “Study of InGaN–GaN light-emitting diodes with different last barrier thicknesses,” IEEE Photonics Technol. Lett. 22(12), 860–862 (2010).
[Crossref]

Wei, T. B.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97(06), 062103 (2010).
[Crossref]

Wei Sun, X.

Z.-H. Zhang, Y. Ji, W. Liu, S. Tiam Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. Wei Sun, and H. Volkan Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(07), 073511 (2014).
[Crossref]

Z.-H. Zhang, S. Tiam Tan, Z. Kyaw, W. Liu, Y. Ji, Z. Ju, X. Zhang, X. Wei Sun, and H. Volkan Demir, “p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas,” Appl. Phys. Lett. 103(26), 263501 (2013).
[Crossref]

Xing, H.

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures,” Science 327(5961), 60–64 (2010).
[Crossref] [PubMed]

Xu, S.

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “On the hole accelerator for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108(15), 151105 (2016).
[Crossref]

Xue, J.

J. Chang, D. Chen, J. Xue, K. Dong, B. Liu, H. Lu, R. Zhang, and Y. Zheng, “AlGaN-based multiple quantum well deep ultraviolet light-emitting diodes with polarization doping,” IEEE Photonics J. 8(1), 1600207 (2016).
[Crossref]

Yan, J. C.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97(06), 062103 (2010).
[Crossref]

Ye, C. Y.

S. Q. Liu, C. Y. Ye, X. F. Cai, S. P. Li, W. Lin, and J. Y. Kang, “Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer,” Appl. Phys., A Mater. Sci. Process. 122(5), 527 (2016).
[Crossref]

Yin, Y. A.

S. Wang, Y. A. Yin, H. Gu, N. Wang, and L. Liu, “Graded AlGaN/AlGaN superlattice insert layer improved performance of AlGaN-based deep ultraviolet light-emitting diodes,” J. Disp. Technol. 12(10), 1112–1116 (2016).
[Crossref]

Zeng, Y. P.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97(06), 062103 (2010).
[Crossref]

Zhang, L.

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97(06), 062103 (2010).
[Crossref]

Zhang, R.

J. Chang, D. Chen, J. Xue, K. Dong, B. Liu, H. Lu, R. Zhang, and Y. Zheng, “AlGaN-based multiple quantum well deep ultraviolet light-emitting diodes with polarization doping,” IEEE Photonics J. 8(1), 1600207 (2016).
[Crossref]

Zhang, X.

Z.-H. Zhang, W. Liu, S. T. Tan, Y. Ji, L. Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “A hole accelerator for InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 105(15), 153503 (2014).
[Crossref]

Z.-H. Zhang, Y. Ji, W. Liu, S. Tiam Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. Wei Sun, and H. Volkan Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(07), 073511 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z.-H. Zhang, S. Tiam Tan, Z. Kyaw, W. Liu, Y. Ji, Z. Ju, X. Zhang, X. Wei Sun, and H. Volkan Demir, “p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas,” Appl. Phys. Lett. 103(26), 263501 (2013).
[Crossref]

Zhang, Y.

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “On the hole accelerator for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108(15), 151105 (2016).
[Crossref]

Z.-H. Zhang, Y. Zhang, W. Bi, H. V. Demir, and X. W. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates,” Phys. Status Solidi 213(12), 3078–3102 (2016).
[Crossref]

Z.-H. Zhang, Y. Ji, W. Liu, S. Tiam Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. Wei Sun, and H. Volkan Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(07), 073511 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Y. Ji, L. Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “A hole accelerator for InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 105(15), 153503 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Zhang, Z.-H.

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “On the hole accelerator for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108(15), 151105 (2016).
[Crossref]

Z.-H. Zhang, Y. Zhang, W. Bi, H. V. Demir, and X. W. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates,” Phys. Status Solidi 213(12), 3078–3102 (2016).
[Crossref]

Z.-H. Zhang, Y. Ji, W. Liu, S. Tiam Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. Wei Sun, and H. Volkan Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(07), 073511 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Y. Ji, L. Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “A hole accelerator for InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 105(15), 153503 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z.-H. Zhang, S. Tiam Tan, Z. Kyaw, W. Liu, Y. Ji, Z. Ju, X. Zhang, X. Wei Sun, and H. Volkan Demir, “p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas,” Appl. Phys. Lett. 103(26), 263501 (2013).
[Crossref]

Z.-H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,” Opt. Express 21(4), 4958–4969 (2013).
[Crossref] [PubMed]

Zhao, H.

H. Zhao, G. Liu, and X. H. Li, “III-Nitride Photonics,” IEEE Photonics J. 2(2), 241–248 (2010).
[Crossref]

Zheng, K.

Zheng, Y.

J. Chang, D. Chen, J. Xue, K. Dong, B. Liu, H. Lu, R. Zhang, and Y. Zheng, “AlGaN-based multiple quantum well deep ultraviolet light-emitting diodes with polarization doping,” IEEE Photonics J. 8(1), 1600207 (2016).
[Crossref]

Zhu, B.

Z.-H. Zhang, W. Liu, S. T. Tan, Y. Ji, L. Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “A hole accelerator for InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 105(15), 153503 (2014).
[Crossref]

Z.-H. Zhang, Y. Ji, W. Liu, S. Tiam Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. Wei Sun, and H. Volkan Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(07), 073511 (2014).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Appl. Phys. Express (2)

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

H. Y. Ryu, I. G. Choi, H. S. Choi, and J. I. Shim, “Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes,” Appl. Phys. Express 6(6), 062101 (2013).
[Crossref]

Appl. Phys. Lett. (7)

V. Fiorentini, F. Bernardini, and O. Ambacher, “Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures,” Appl. Phys. Lett. 80(7), 1204–1206 (2002).
[Crossref]

Z.-H. Zhang, Y. Ji, W. Liu, S. Tiam Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. Wei Sun, and H. Volkan Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(07), 073511 (2014).
[Crossref]

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett. 84(25), 5264–5266 (2004).
[Crossref]

Z.-H. Zhang, W. Liu, S. T. Tan, Y. Ji, L. Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “A hole accelerator for InGaN/GaN light-emitting diodes,” Appl. Phys. Lett. 105(15), 153503 (2014).
[Crossref]

Z.-H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. V. Demir, and X. W. Sun, “On the hole accelerator for III-nitride light-emitting diodes,” Appl. Phys. Lett. 108(15), 151105 (2016).
[Crossref]

Z.-H. Zhang, S. Tiam Tan, Z. Kyaw, W. Liu, Y. Ji, Z. Ju, X. Zhang, X. Wei Sun, and H. Volkan Demir, “p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas,” Appl. Phys. Lett. 103(26), 263501 (2013).
[Crossref]

L. Zhang, K. Ding, J. C. Yan, J. X. Wang, Y. P. Zeng, T. B. Wei, Y. Y. Li, B. J. Sun, R. F. Duan, and J. M. Li, “Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure,” Appl. Phys. Lett. 97(06), 062103 (2010).
[Crossref]

Appl. Phys., A Mater. Sci. Process. (1)

S. Q. Liu, C. Y. Ye, X. F. Cai, S. P. Li, W. Lin, and J. Y. Kang, “Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer,” Appl. Phys., A Mater. Sci. Process. 122(5), 527 (2016).
[Crossref]

IEEE J. Quantum Electron. (1)

Y. K. Kuo, J. Y. Chang, F. M. Chen, Y. H. Shih, and H.-T. Chang, “Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes,” IEEE J. Quantum Electron. 52(4), 3300105 (2016).
[Crossref]

IEEE Photonics J. (3)

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. Denbaars, “Advances in the LED materials and architectures for energy-saving solid-state lighting toward “lighting revolution”,” IEEE Photonics J. 4(2), 613–619 (2012).
[Crossref]

H. Zhao, G. Liu, and X. H. Li, “III-Nitride Photonics,” IEEE Photonics J. 2(2), 241–248 (2010).
[Crossref]

J. Chang, D. Chen, J. Xue, K. Dong, B. Liu, H. Lu, R. Zhang, and Y. Zheng, “AlGaN-based multiple quantum well deep ultraviolet light-emitting diodes with polarization doping,” IEEE Photonics J. 8(1), 1600207 (2016).
[Crossref]

IEEE Photonics Technol. Lett. (1)

J. R. Chen, T. C. Lu, H. C. Kuo, K. L. Fang, K. F. Huang, C. W. Kuo, C. J. Chang, C. T. Kuo, and S. C. Wang, “Study of InGaN–GaN light-emitting diodes with different last barrier thicknesses,” IEEE Photonics Technol. Lett. 22(12), 860–862 (2010).
[Crossref]

J. Appl. Phys. (1)

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, and E. J. U. Group, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100(2), 023522 (2006).
[Crossref]

J. Cryst. Growth (1)

M. Katsuragawa, S. Sota, M. Komori, C. Anbe, T. Takeuchi, H. Sakai, H. Amano, and I. Akasaki, “Thermal ionization energy of Si and Mg in AlGaN,” J. Cryst. Growth 189, 528–531 (1998).
[Crossref]

J. Disp. Technol. (1)

S. Wang, Y. A. Yin, H. Gu, N. Wang, and L. Liu, “Graded AlGaN/AlGaN superlattice insert layer improved performance of AlGaN-based deep ultraviolet light-emitting diodes,” J. Disp. Technol. 12(10), 1112–1116 (2016).
[Crossref]

Nat. Photonics (1)

A. Khan, K. Balakrishnan, and T. Katona, “Ultraviolet light-emitting diodes based on group three nitrides,” Nat. Photonics 2(2), 77–84 (2008).
[Crossref]

Opt. Express (2)

Phys. Status Solidi (2)

Z.-H. Zhang, Y. Zhang, W. Bi, H. V. Demir, and X. W. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates,” Phys. Status Solidi 213(12), 3078–3102 (2016).
[Crossref]

J. Piprek, “Efficiency droop in nitride-based light-emitting diodes,” Phys. Status Solidi 207(10), 2217–2225 (2010).
[Crossref]

Proc. SPIE (2)

J. Piprek, R. K. Sink, M. A. Hansen, J. E. Bowers, and S. P. DenBaars, “Simulation and optimization of 420-nm InGaN/GaN laser diodes,” Proc. SPIE 3944, 28 (2000).
[Crossref]

M. S. Shur and R. Gaska, “III-nitride based deep ultraviolet light sources,” Proc. SPIE 6894, 689419 (2008).

Science (1)

J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, “Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures,” Science 327(5961), 60–64 (2010).
[Crossref] [PubMed]

Superlattices Microstruct. (1)

A. Adaine, S. O. S. Hamady, and N. Fressengeas, “Simulation study of a new InGaN p-layer free Schottky based solar cell,” Superlattices Microstruct. 96, 121–133 (2016).
[Crossref]

Other (3)

J. F. Muth, J. D. Brown, M. A. L. Johnson, Z. Yu, R. M. Kolbas, J. W. Cook, and J. F. Schetzina, “Absorption coefficient and refractive Index of GaN, AIN and AlGaN alloys,” MRS Internet J. Nitride Semicond. Res. 4S1, G5.2(1999).

E. F. Schubert, “Light-Emitting Diodes”, 2nd edition (Cambridge, 2006).

S. M. Sze, “Physics of Semiconductor Devices”, 2nd edition (John Wiley & Sons, Inc., 1981).

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Figures (9)

Fig. 1
Fig. 1 (a) Schematic energy band diagram for the electric-field reservoir, in which there exists an interface depletion region in the p-AlxGa1-xN layer, (b) schematic electric field profile in the interface depletion region. Here, Ec, Ev, Efe, Efh and Фh denote the conduction band, the valence band, the quasi-Fermi level for electrons, the quasi-Fermi level for holes, and the effective valence band barrier height for the p-AlxGa1-xN layer. Note, the alignment of the quasi-Fermi level for holes sketches that there exists a hole depletion region in the p-AlxGa1-xN side for the p-AlxGa1-xN /p-GaN interface, i.e., interface depletion region.
Fig. 2
Fig. 2 (a) Original LED architecture without the electric-field reservoir, (b) DUV LED structure with the electric-field reservoir.
Fig. 3
Fig. 3 Electric field profiles in the electric-field reservoirs for the Reference device, Device 1 (D1), Device 2 (D2), and Device 3 (D3), respectively. The electric field profile in the p-GaN hole injection layer for the Original DUV LED structure is also presented. The positive direction of the electric field is along the C + orientation. Data are collected at 150 A/cm2.
Fig. 4
Fig. 4 Energy band diagrams in the p-EBL and the hole injection layer for (a) the Original device, (b) the Reference device, (c) Device 1 (D1), and (d) Device 2 (D2). Data collected are at 150 A/cm2.
Fig. 5
Fig. 5 (a) IQE and optical power density in terms of the injection current density, (b) hole concentration profiles in the MQW and in the p-AlxGa1-xN regions for the Original device and the Reference device, respectively. Due to the low IQE, Fig. (a) is plotted in semi-log scale for better comparison. Data for Fig. (b) are collected at the position of 100 µm from the left edge of the mesa when the current density is 150 A/cm2. The EQE and the optical power density are calculated by assuming 9% as the light extraction efficiency.
Fig. 6
Fig. 6 (a) IQE and optical power density in terms of the injection current density, (b) hole concentration profiles in the MQW and in the p-AlxGa1-xN regions for the Reference device and Device 1 (D1), respectively. Data for Fig. (b) are collected at the position of 100 µm from the left edge of the mesa when the current density is 150 A/cm2. The EQE and the optical power density are calculated by assuming 9% as the light extraction efficiency.
Fig. 7
Fig. 7 (a) IQE and optical power in terms of the injection current density, (b) vertical hole concentration profiles in the MQW and in the p-AlxGa1-xN regions, and (c) lateral hole concentration profiles in the last quantum well closest to the p-EBL for the Reference device, Device 2 (D2) and Device 3 (D3), respectively. Data for Figs. (b) and (c) are collected at the position of 100 µm from the left edge of the mesa and in the quantum well closest to the p-EBL, respectively when the current density is 150 A/cm2. The EQE and the optical power density are calculated by assuming 9% as the light extraction efficiency.
Fig. 8
Fig. 8 Current density in terms of the applied bias for (a) the Original device and the Reference device, (b) the Reference device and Device 1 (D1), (c) the Reference device, Device 2 (D2) and Device 2 (D3).
Fig. 9
Fig. 9 Wall plug efficiency in terms of the current density for (a) the Original device and the Reference device, (b) the Reference device and Device 1 (D1), (c) the Reference device, Device 2 (D2) and Device 2 (D3).

Tables (2)

Tables Icon

Table 1 Parameters for different p-AlxGa1-xN and p-AlyGa1-yN structures

Tables Icon

Table 2 Values of Фh and the work done to holes by the electric field within the hole supplier for different device architectures, “–” represents that holes obtain energy from the electric field. Data are collected at 150 A/cm2.

Metrics