Abstract

2-µm-wavelength-range silicon-on-insulator (SOI) arrayed waveguide gratings (AWGs) with heterogeneously integrated InP-based type-II quantum well photodetectors are presented. Low insertion loss (2.5-3 dB) and low crosstalk (−30 to −25 dB) AWGs are realized. The InP-based type-II photodetectors are integrated with the AWGs using two different coupling approaches. Adiabatic-taper-based photodetectors show a responsivity of 1.6 A/W at 2.35 µm wavelength and dark current of 10 nA at −0.5 V, while photodetectors using grating-assisted coupling have a responsivity of 0.1 A/W and dark current of 5 nA at −0.5 V. The integration of the photodetector array does not degrade the insertion loss and crosstalk of the device. The photodetector epitaxial stack can also be used to realize the integration of a broadband light source, thereby enabling fully integrated spectroscopic systems.

© 2016 Optical Society of America

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References

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2015 (4)

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

S. Sprengel, G. K. Veerabathran, F. Federer, A. Andrejew, and M.-C. Amann, “InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1701309 (2015).
[Crossref]

N. Ye, M. Gleeson, M. Sadiq, B. Roycroft, C. Robert, H. Yang, H. Zhang, P. Morrissey, N. M. Suibhne, K. Thomas, A. Gocalinska, E. Pelucchi, R. Phelan, B. Kelly, J. O’Carroll, F. Peters, F. G. Gunning, and B. Corbett, “InP-Based active and passive components for communication systems at 2 µm,” J. Lightwave Technol. 33(5), 971–975 (2015).
[Crossref]

R. Wang, S. Sprengel, M. Muneeb, G. Boehm, R. Baets, M. C. Amann, and G. Roelkens, “2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits,” Opt. Express 23(20), 26834–26841 (2015).
[Crossref] [PubMed]

2014 (2)

K. Okamoto, “Wavelength-Division-Multiplexing Devices in Thin SOI: Advances and Prospects,” IEEE J. Sel. Top. Quantum Electron. 20(4), 248–257 (2014).
[Crossref]

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

2013 (4)

2012 (3)

S. Sprengel, A. Andrejew, K. Vizbaras, T. Gruendl, K. Geiger, G. Boehm, C. Grasse, and M.-C. Amann, “Type-II InP-based lasers emitting at 2.55 μm,” Appl. Phys. Lett. 100(4), 041109 (2012).
[Crossref]

R. Yu, R. Proietti, J. Kurumida, A. Karalar, B. Guan, and S. J. B. Yoo, “Rapid high-precision in situ wavelength calibration for tunable lasers using an athermal AWG and a PD array,” IEEE Photonics Technol. Lett. 24(1), 70–72 (2012).
[Crossref]

H. Nishi, T. Tsuchizawa, R. Kou, H. Shinojima, T. Yamada, H. Kimura, Y. Ishikawa, K. Wada, and K. Yamada, “Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver,” Opt. Express 20(8), 9312–9321 (2012).
[Crossref] [PubMed]

2011 (1)

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournie, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photonics Technol. Lett. 23(23), 1760–1762 (2011).
[Crossref]

2010 (1)

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

2004 (1)

C. B. Li, R. W. Mao, Y. H. Zuo, L. Zhao, W. H. Shi, L. P. Luo, B. W. Cheng, J. Z. Yu, and Q. M. Wang, “1.55 µm Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror,” Appl. Phys. Lett. 85(14), 2697–2699 (2004).
[Crossref]

1996 (1)

M. Smit and C. Van Dam, “PHASAR-based WDM-devices: Principles, design and applications,” IEEE J. Sel. Top. Quantum Electron. 2(2), 236–250 (1996).
[Crossref]

Alam, S. U.

Amann, M. C.

Amann, M.-C.

S. Sprengel, G. K. Veerabathran, F. Federer, A. Andrejew, and M.-C. Amann, “InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1701309 (2015).
[Crossref]

S. Sprengel, A. Andrejew, K. Vizbaras, T. Gruendl, K. Geiger, G. Boehm, C. Grasse, and M.-C. Amann, “Type-II InP-based lasers emitting at 2.55 μm,” Appl. Phys. Lett. 100(4), 041109 (2012).
[Crossref]

Andrejew, A.

S. Sprengel, G. K. Veerabathran, F. Federer, A. Andrejew, and M.-C. Amann, “InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1701309 (2015).
[Crossref]

S. Sprengel, A. Andrejew, K. Vizbaras, T. Gruendl, K. Geiger, G. Boehm, C. Grasse, and M.-C. Amann, “Type-II InP-based lasers emitting at 2.55 μm,” Appl. Phys. Lett. 100(4), 041109 (2012).
[Crossref]

Baddela, N. K.

Baets, R.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

R. Wang, S. Sprengel, M. Muneeb, G. Boehm, R. Baets, M. C. Amann, and G. Roelkens, “2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits,” Opt. Express 23(20), 26834–26841 (2015).
[Crossref] [PubMed]

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Becker, M.

Bienstman, P.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

Boehm, G.

Bogaerts, W.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Brouckaert, J.

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Campenhout, J. V.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

Cerutti, L.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournie, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photonics Technol. Lett. 23(23), 1760–1762 (2011).
[Crossref]

Chen, X.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Z. Mashanovich, and G. Roelkens, “Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8 μm,” Opt. Express 21(10), 11659–11669 (2013).
[Crossref] [PubMed]

Cheng, B. W.

C. B. Li, R. W. Mao, Y. H. Zuo, L. Zhao, W. H. Shi, L. P. Luo, B. W. Cheng, J. Z. Yu, and Q. M. Wang, “1.55 µm Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror,” Appl. Phys. Lett. 85(14), 2697–2699 (2004).
[Crossref]

Corbett, B.

Dave, U.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Dave, U. D.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

De Groote, A.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

De Vos, K.

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Dhakal, A.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

Dorpe, P. V.

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Dumon, P.

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
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Ellis, A. D.

Federer, F.

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Gassenq, A.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
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E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
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N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournie, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photonics Technol. Lett. 23(23), 1760–1762 (2011).
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G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
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Gocalinska, A.

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Gray, D. R.

Green, W.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
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Gruendl, T.

S. Sprengel, A. Andrejew, K. Vizbaras, T. Gruendl, K. Geiger, G. Boehm, C. Grasse, and M.-C. Amann, “Type-II InP-based lasers emitting at 2.55 μm,” Appl. Phys. Lett. 100(4), 041109 (2012).
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Gruner-Nielsen, L.

Guan, B.

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Gunning, F. G.

Hattasan, N.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournie, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photonics Technol. Lett. 23(23), 1760–1762 (2011).
[Crossref]

Hayes, J. R.

Healy, N.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
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Heidt, A. M.

Hens, Z.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Hu, C.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
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Ishikawa, Y.

Karalar, A.

R. Yu, R. Proietti, J. Kurumida, A. Karalar, B. Guan, and S. J. B. Yoo, “Rapid high-precision in situ wavelength calibration for tunable lasers using an athermal AWG and a PD array,” IEEE Photonics Technol. Lett. 24(1), 70–72 (2012).
[Crossref]

Kelly, B.

Keyvaninia, S.

Kimura, H.

Kou, R.

Kurumida, J.

R. Yu, R. Proietti, J. Kurumida, A. Karalar, B. Guan, and S. J. B. Yoo, “Rapid high-precision in situ wavelength calibration for tunable lasers using an athermal AWG and a PD array,” IEEE Photonics Technol. Lett. 24(1), 70–72 (2012).
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Kuyken, B.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Z. Mashanovich, and G. Roelkens, “Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8 μm,” Opt. Express 21(10), 11659–11669 (2013).
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Leo, F.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
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G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
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Lepage, G.

Li, C. B.

C. B. Li, R. W. Mao, Y. H. Zuo, L. Zhao, W. H. Shi, L. P. Luo, B. W. Cheng, J. Z. Yu, and Q. M. Wang, “1.55 µm Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror,” Appl. Phys. Lett. 85(14), 2697–2699 (2004).
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Li, Z.

Liu, X.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
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Loo, R.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
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Luo, L. P.

C. B. Li, R. W. Mao, Y. H. Zuo, L. Zhao, W. H. Shi, L. P. Luo, B. W. Cheng, J. Z. Yu, and Q. M. Wang, “1.55 µm Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror,” Appl. Phys. Lett. 85(14), 2697–2699 (2004).
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MacSuibhne, N.

Malik, A.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Z. Mashanovich, and G. Roelkens, “Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8 μm,” Opt. Express 21(10), 11659–11669 (2013).
[Crossref] [PubMed]

Mao, R. W.

C. B. Li, R. W. Mao, Y. H. Zuo, L. Zhao, W. H. Shi, L. P. Luo, B. W. Cheng, J. Z. Yu, and Q. M. Wang, “1.55 µm Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror,” Appl. Phys. Lett. 85(14), 2697–2699 (2004).
[Crossref]

Martens, D.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

Mashanovich, G.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Mashanovich, G. Z.

Morrissey, P.

Muneeb, M.

R. Wang, S. Sprengel, M. Muneeb, G. Boehm, R. Baets, M. C. Amann, and G. Roelkens, “2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits,” Opt. Express 23(20), 26834–26841 (2015).
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A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Z. Mashanovich, and G. Roelkens, “Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8 μm,” Opt. Express 21(10), 11659–11669 (2013).
[Crossref] [PubMed]

S. Keyvaninia, M. Muneeb, S. Stankovic, P. J. V. Veldhoven, D. V. Thourhout, and G. Roelkens, “Ultra-thin DVS-BCB adhesive bonding of III–V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate,” Opt. Mater. Express 3(1), 35–46 (2013).
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E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

Nedeljkovic, M.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Z. Mashanovich, and G. Roelkens, “Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8 μm,” Opt. Express 21(10), 11659–11669 (2013).
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Nishi, H.

Numkam, E.

O’Carroll, J.

Okamoto, K.

K. Okamoto, “Wavelength-Division-Multiplexing Devices in Thin SOI: Advances and Prospects,” IEEE J. Sel. Top. Quantum Electron. 20(4), 248–257 (2014).
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Osgood, R.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Pálsdóttir, B.

Parmigiani, F.

Pathak, S.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Z. Mashanovich, and G. Roelkens, “Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8 μm,” Opt. Express 21(10), 11659–11669 (2013).
[Crossref] [PubMed]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

Peacock, A. C.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Pelucchi, E.

Peters, F.

Petropoulos, P.

Petrovich, M. N.

Peyskens, F.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

Phelan, R.

Poletti, F.

Proietti, R.

R. Yu, R. Proietti, J. Kurumida, A. Karalar, B. Guan, and S. J. B. Yoo, “Rapid high-precision in situ wavelength calibration for tunable lasers using an athermal AWG and a PD array,” IEEE Photonics Technol. Lett. 24(1), 70–72 (2012).
[Crossref]

Richardson, D. J.

Robert, C.

Rodriguez, J. B.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournie, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photonics Technol. Lett. 23(23), 1760–1762 (2011).
[Crossref]

Roelkens, G.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

R. Wang, S. Sprengel, M. Muneeb, G. Boehm, R. Baets, M. C. Amann, and G. Roelkens, “2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits,” Opt. Express 23(20), 26834–26841 (2015).
[Crossref] [PubMed]

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

S. Keyvaninia, M. Muneeb, S. Stankovic, P. J. V. Veldhoven, D. V. Thourhout, and G. Roelkens, “Ultra-thin DVS-BCB adhesive bonding of III–V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate,” Opt. Mater. Express 3(1), 35–46 (2013).
[Crossref]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Z. Mashanovich, and G. Roelkens, “Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8 μm,” Opt. Express 21(10), 11659–11669 (2013).
[Crossref] [PubMed]

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournie, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photonics Technol. Lett. 23(23), 1760–1762 (2011).
[Crossref]

Roycroft, B.

Ruocco, A.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

Ryckeboer, E.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Z. Mashanovich, and G. Roelkens, “Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8 μm,” Opt. Express 21(10), 11659–11669 (2013).
[Crossref] [PubMed]

E. Ryckeboer, A. Gassenq, M. Muneeb, N. Hattasan, S. Pathak, L. Cerutti, J. B. Rodriguez, E. Tournié, W. Bogaerts, R. Baets, and G. Roelkens, “Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm,” Opt. Express 21(5), 6101–6108 (2013).
[Crossref] [PubMed]

Ryckeboer, E. M. P.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

Sadiq, M.

Sanchez, D.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Selvaraja, S. K.

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Shen, L.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Shi, W. H.

C. B. Li, R. W. Mao, Y. H. Zuo, L. Zhao, W. H. Shi, L. P. Luo, B. W. Cheng, J. Z. Yu, and Q. M. Wang, “1.55 µm Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror,” Appl. Phys. Lett. 85(14), 2697–2699 (2004).
[Crossref]

Shimura, Y.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Shinojima, H.

Slavík, R.

Smit, M.

M. Smit and C. Van Dam, “PHASAR-based WDM-devices: Principles, design and applications,” IEEE J. Sel. Top. Quantum Electron. 2(2), 236–250 (1996).
[Crossref]

Sprengel, S.

S. Sprengel, G. K. Veerabathran, F. Federer, A. Andrejew, and M.-C. Amann, “InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1701309 (2015).
[Crossref]

R. Wang, S. Sprengel, M. Muneeb, G. Boehm, R. Baets, M. C. Amann, and G. Roelkens, “2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits,” Opt. Express 23(20), 26834–26841 (2015).
[Crossref] [PubMed]

S. Sprengel, A. Andrejew, K. Vizbaras, T. Gruendl, K. Geiger, G. Boehm, C. Grasse, and M.-C. Amann, “Type-II InP-based lasers emitting at 2.55 μm,” Appl. Phys. Lett. 100(4), 041109 (2012).
[Crossref]

Stankovic, S.

Subramanian, A.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

Suibhne, N. M.

Thomas, K.

Thomas, N. L.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

Thourhout, D. V.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

S. Keyvaninia, M. Muneeb, S. Stankovic, P. J. V. Veldhoven, D. V. Thourhout, and G. Roelkens, “Ultra-thin DVS-BCB adhesive bonding of III–V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate,” Opt. Mater. Express 3(1), 35–46 (2013).
[Crossref]

Tournie, E.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournie, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photonics Technol. Lett. 23(23), 1760–1762 (2011).
[Crossref]

Tournié, E.

Tsuchizawa, T.

Uvin, S.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Van Campenhout, J.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

M. Muneeb, X. Chen, P. Verheyen, G. Lepage, S. Pathak, E. Ryckeboer, A. Malik, B. Kuyken, M. Nedeljkovic, J. Van Campenhout, G. Z. Mashanovich, and G. Roelkens, “Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8 μm,” Opt. Express 21(10), 11659–11669 (2013).
[Crossref] [PubMed]

Van Dam, C.

M. Smit and C. Van Dam, “PHASAR-based WDM-devices: Principles, design and applications,” IEEE J. Sel. Top. Quantum Electron. 2(2), 236–250 (1996).
[Crossref]

Van Thourhout, D.

W. Bogaerts, S. K. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, “Silicon-on-insulator spectral filters fabricated with CMOS technology,” IEEE J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010).
[Crossref]

Veerabathran, G. K.

S. Sprengel, G. K. Veerabathran, F. Federer, A. Andrejew, and M.-C. Amann, “InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells,” IEEE J. Sel. Top. Quantum Electron. 21(6), 1701309 (2015).
[Crossref]

Veldhoven, P. J. V.

Verheyen, P.

Vincent, B.

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Vizbaras, K.

S. Sprengel, A. Andrejew, K. Vizbaras, T. Gruendl, K. Geiger, G. Boehm, C. Grasse, and M.-C. Amann, “Type-II InP-based lasers emitting at 2.55 μm,” Appl. Phys. Lett. 100(4), 041109 (2012).
[Crossref]

Wada, K.

Wang, Q. M.

C. B. Li, R. W. Mao, Y. H. Zuo, L. Zhao, W. H. Shi, L. P. Luo, B. W. Cheng, J. Z. Yu, and Q. M. Wang, “1.55 µm Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror,” Appl. Phys. Lett. 85(14), 2697–2699 (2004).
[Crossref]

Wang, R.

R. Wang, S. Sprengel, M. Muneeb, G. Boehm, R. Baets, M. C. Amann, and G. Roelkens, “2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits,” Opt. Express 23(20), 26834–26841 (2015).
[Crossref] [PubMed]

G. Roelkens, U. Dave, A. Gassenq, N. Hattasan, C. Hu, B. Kuyken, F. Leo, A. Malik, M. Muneeb, E. Ryckeboer, D. Sanchez, S. Uvin, R. Wang, Z. Hens, R. Baets, Y. Shimura, F. Gencarelli, B. Vincent, R. Loo, J. Van Campenhout, L. Cerutti, J. B. Rodriguez, E. Tournie, X. Chen, M. Nedeljkovic, G. Mashanovich, L. Shen, N. Healy, A. C. Peacock, X. Liu, R. Osgood, and W. Green, “Silicon-based photonic integration beyond the telecommunication wavelength range,” IEEE J. Sel. Top. Quantum Electron. 20(4), 394–404 (2014).
[Crossref]

Wheeler, N. V.

Wooler, J. P.

Wuytens, P. C.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

Xie, W.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

Yamada, K.

Yamada, T.

Yang, H.

Ye, N.

Yoo, S. J. B.

R. Yu, R. Proietti, J. Kurumida, A. Karalar, B. Guan, and S. J. B. Yoo, “Rapid high-precision in situ wavelength calibration for tunable lasers using an athermal AWG and a PD array,” IEEE Photonics Technol. Lett. 24(1), 70–72 (2012).
[Crossref]

Yu, J. Z.

C. B. Li, R. W. Mao, Y. H. Zuo, L. Zhao, W. H. Shi, L. P. Luo, B. W. Cheng, J. Z. Yu, and Q. M. Wang, “1.55 µm Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror,” Appl. Phys. Lett. 85(14), 2697–2699 (2004).
[Crossref]

Yu, R.

R. Yu, R. Proietti, J. Kurumida, A. Karalar, B. Guan, and S. J. B. Yoo, “Rapid high-precision in situ wavelength calibration for tunable lasers using an athermal AWG and a PD array,” IEEE Photonics Technol. Lett. 24(1), 70–72 (2012).
[Crossref]

Zhang, H.

Zhao, H.

A. Subramanian, E. M. P. Ryckeboer, A. Dhakal, F. Peyskens, A. Malik, B. Kuyken, H. Zhao, S. Pathak, A. Ruocco, A. De Groote, P. C. Wuytens, D. Martens, F. Leo, W. Xie, U. D. Dave, M. Muneeb, P. V. Dorpe, J. V. Campenhout, W. Bogaerts, P. Bienstman, N. L. Thomas, D. V. Thourhout, Z. Hens, G. Roelkens, and R. Baets, “Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip,” Photonics Research 5(3), 47–59 (2015).
[Crossref]

Zhao, J.

Zhao, L.

C. B. Li, R. W. Mao, Y. H. Zuo, L. Zhao, W. H. Shi, L. P. Luo, B. W. Cheng, J. Z. Yu, and Q. M. Wang, “1.55 µm Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror,” Appl. Phys. Lett. 85(14), 2697–2699 (2004).
[Crossref]

Zuo, Y. H.

C. B. Li, R. W. Mao, Y. H. Zuo, L. Zhao, W. H. Shi, L. P. Luo, B. W. Cheng, J. Z. Yu, and Q. M. Wang, “1.55 µm Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror,” Appl. Phys. Lett. 85(14), 2697–2699 (2004).
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Appl. Phys. Lett. (2)

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Figures (10)

Fig. 1
Fig. 1 Microscope image of (a) the low resolution AWG; (b) magnification of the input section of the low resolution AWG; (c) the high resolution AWG.
Fig. 2
Fig. 2 The measured spectral responses of all the channels in four different AWGs.
Fig. 3
Fig. 3 EL spectrum from a heterogeneously integrated InP-based type-II LED (100 mA bias). The inset picture shows the band structure of one “W”-shaped period of the active region.
Fig. 4
Fig. 4 Schematic of the cross-section of the photodetector/LED structure.
Fig. 5
Fig. 5 (a) Schematic drawing of the top view of the adiabatically-coupled photodetectors on SOI waveguides; (b) SEM image of the cross-section of the device.
Fig. 6
Fig. 6 (a) I-V curve of the adiabatically-coupled photodetectors without light input, the inset figure shows the dark current of the devices; (b) photoresponse of the devices under different input power levels; (c) Linearity analysis of the adiabatically-coupled III-V-on-silicon photodetectors.
Fig. 7
Fig. 7 (a) Microscope image of an AWG integrated with adiabatically-coupled photodetectors; (b) and (c) response of two AWG spectrometers with integrated photodetectors.
Fig. 8
Fig. 8 (a) Schematic cross-section of the grating-assisted photodetector; (b) SEM image of the device cross-section.
Fig. 9
Fig. 9 (a) I-V characteristic of the photodetector in the dark, the inset picture shows the device dark current as a function of reverse bias; (b) I-V curve of the device under different waveguide-coupled input power levels.
Fig. 10
Fig. 10 (a) Microscope image of the high resolution AWG integrated with grating-assisted photodetectors; (b) and (c) measurement results of AWG-2 and AWG-4 integrated with grating-assisted photodetectors.

Tables (1)

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Table 1 Design and Layout Parameters Summary for AWGs

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