Abstract

A uni-traveling carrier photodetector (UTC-PD), heterogeneously integrated on silicon, is demonstrated. It is fabricated in an InP-based photonic membrane bonded on a silicon wafer, using a novel double-sided processing scheme. A very high 3 dB bandwidth of beyond 67 GHz is obtained, together with a responsivity of 0.7 A/W at 1.55 μm wavelength. In addition, open eye diagrams at 54 Gb/s are observed. These results promise high speed applications using a novel full-functionality photonic platform on silicon.

© 2016 Optical Society of America

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References

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2015 (5)

2014 (5)

Y. Jiao, J. Pello, A. Millan-Mejia, L. Shen, B. Smalbrugge, E. J. Geluk, M. Smit, and J. van der Tol, “Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices,” Opt. Lett. 39(6), 1645–1648 (2014).
[Crossref] [PubMed]

M. Piels and J. Bowers, “40 GHz Si/Ge Uni-Traveling Carrier Waveguide Photodiode,” J. Lightwave Technol. 32(20), 3502–3508 (2014).
[Crossref]

X. Xie, Q. Zhou, K. Li, Y. Shen, Q. Li, Z. Yang, A. Beling, and J. C. Campbell, “Improved power conversion efficiency in high-performance photodiodes by flip-chip bonding on diamond,” Optica 1(6), 429–435 (2014).
[Crossref]

J. van der Tol, J. Pello, S. Bhat, Y. Jiao, D. Heiss, G. Roelkens, H. Ambrosius, and M. Smit, “Photonic integration in indium-phosphide membranes on silicon (IMOS),” Proc. SPIE 8988, 89880M (2014).
[Crossref]

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

2013 (2)

M. Heck, J. Bauters, M. Davenport, J. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. Bowers, “Hybrid silicon photonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

S. Keyvaninia, M. Muneeb, S. Stankovi, P. J. Van Veldhoven, D. Van Thourhout, and G. Roelkens, “Ultra-thin DVS-BCB adhesive bonding of III–V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate,” Opt. Mater. Express 3, (1)35–46 (2013).
[Crossref]

2012 (2)

2011 (1)

S. Arai, N. Nishiyama, T. Maruyama, and T. Okumura, “GaInAsP/InP membrane lasers for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1381–1389 (2011).
[Crossref]

2010 (2)

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III–V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photon. Rev. 4(6), 751–779 (2010).
[Crossref]

P. Binetti, X. Leijtens, T. De Vries, Y. Oei, L. D. Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. Van Veldhoven, R. Notzel, and M. Smit, “InP/InGaAs photodetector on SOI photonic circuitry,” IEEE Photon. J. 2(3), 299–305 (2010).
[Crossref]

Accard, A.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Ambrosius, H.

L. Shen, V. Dolores-Calzadilla, C. Wullems, Y. Jiao, A. Millan-Mejia, A. Higuera-Rodriguez, D. Heiss, J. van der Tol, H. Ambrosius, G. Roelkens, and M. Smit, “Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices,” Opt. Mater. Express 5(2), 393–398 (2015).
[Crossref]

Y. Jiao, T. d. Vries, R. Unger, L. Shen, H. Ambrosius, C. Radu, M. Arens, M. Smit, and J. van der Tol, “Vertical and smooth single-step Reactive Ion Etching process for InP membrane waveguides,” J. Electrochem. Soc. 162(8), E90–E95 (2015).
[Crossref]

J. van der Tol, J. Pello, S. Bhat, Y. Jiao, D. Heiss, G. Roelkens, H. Ambrosius, and M. Smit, “Photonic integration in indium-phosphide membranes on silicon (IMOS),” Proc. SPIE 8988, 89880M (2014).
[Crossref]

L. Shen, Y. Jiao, L. Augstin, K. Sander, J. van der Tol, H. Ambrosius, G. Roelkens, and M. Smit, “A low-resistance spiking-free n-type ohmic contact for InP membrane devices,” in 26th International Conference on Indium Phosphide and Related Materials (IPRM), (IEEE, 2014), pp. 1–2.

Arai, S.

S. Arai, N. Nishiyama, T. Maruyama, and T. Okumura, “GaInAsP/InP membrane lasers for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1381–1389 (2011).
[Crossref]

Arens, M.

Y. Jiao, T. d. Vries, R. Unger, L. Shen, H. Ambrosius, C. Radu, M. Arens, M. Smit, and J. van der Tol, “Vertical and smooth single-step Reactive Ion Etching process for InP membrane waveguides,” J. Electrochem. Soc. 162(8), E90–E95 (2015).
[Crossref]

Augstin, L.

L. Shen, Y. Jiao, L. Augstin, K. Sander, J. van der Tol, H. Ambrosius, G. Roelkens, and M. Smit, “A low-resistance spiking-free n-type ohmic contact for InP membrane devices,” in 26th International Conference on Indium Phosphide and Related Materials (IPRM), (IEEE, 2014), pp. 1–2.

Bakir, B.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Bauters, J.

M. Heck, J. Bauters, M. Davenport, J. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. Bowers, “Hybrid silicon photonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

Beling, A.

X. Xie, Q. Zhou, K. Li, Y. Shen, Q. Li, Z. Yang, A. Beling, and J. C. Campbell, “Improved power conversion efficiency in high-performance photodiodes by flip-chip bonding on diamond,” Optica 1(6), 429–435 (2014).
[Crossref]

X. Xie, Q. Zhou, E. Norberg, M. Jacob-Mitos, Y. Chen, A. Ramaswamy, G. Fish, J. E. Bowers, J. C. Campbell, and A. Beling, “Heterogeneously Integrated Waveguide-Coupled Photodiodes on SOI with 12 dBm Output Power at 40 GHz,” in Optical Fiber Communication Conference Post Deadline Papers, OSA Technical Digest (online) (Optical Society of America, 2015), paper Th5B.7.
[Crossref]

A. Beling and J. C. Campbell, “Advances in photodetectors and optical receivers,” in Optical Fiber Telecommunications Volume VIA, I. Kaminow, ed. (Academic Press, 2013).
[Crossref]

Bhat, S.

J. van der Tol, J. Pello, S. Bhat, Y. Jiao, D. Heiss, G. Roelkens, H. Ambrosius, and M. Smit, “Photonic integration in indium-phosphide membranes on silicon (IMOS),” Proc. SPIE 8988, 89880M (2014).
[Crossref]

L. Shen, S. Bhat, Y. Jiao, J. van der Tol, G. Roelkens, and M. Smit, “Towards a high bandwidth waveguide photodetector in an InP membrane on silicon,” in 17th European Conference on Integrated Optics (ECIO), (2014), paper Th 4a R12.

Y. Jiao, D. Heiss, L. Shen, S. Bhat, M. Smit, and J. van der Tol, “First demonstration of an electrically pumped laser in the InP membrane on silicon platform,” in Advanced Photonics 2015, OSA Technical Digest (online) (Optical Society of America, 2015), paper IM4B.3.
[Crossref]

Binetti, P.

P. Binetti, X. Leijtens, T. De Vries, Y. Oei, L. D. Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. Van Veldhoven, R. Notzel, and M. Smit, “InP/InGaAs photodetector on SOI photonic circuitry,” IEEE Photon. J. 2(3), 299–305 (2010).
[Crossref]

Bordel, D.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Bowers, J.

M. Piels and J. Bowers, “40 GHz Si/Ge Uni-Traveling Carrier Waveguide Photodiode,” J. Lightwave Technol. 32(20), 3502–3508 (2014).
[Crossref]

M. Heck, J. Bauters, M. Davenport, J. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. Bowers, “Hybrid silicon photonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III–V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photon. Rev. 4(6), 751–779 (2010).
[Crossref]

J. Bowers and Y. Wey, “High-speed photodetectors,” in Handbook of optics Volume I: fundamentals, techniques, and design, M. Bass, ed. 2nd ed. (McGraw-Hill, 1995).

Bowers, J. E.

X. Xie, Q. Zhou, E. Norberg, M. Jacob-Mitos, Y. Chen, A. Ramaswamy, G. Fish, J. E. Bowers, J. C. Campbell, and A. Beling, “Heterogeneously Integrated Waveguide-Coupled Photodiodes on SOI with 12 dBm Output Power at 40 GHz,” in Optical Fiber Communication Conference Post Deadline Papers, OSA Technical Digest (online) (Optical Society of America, 2015), paper Th5B.7.
[Crossref]

Campbell, J. C.

X. Xie, Q. Zhou, K. Li, Y. Shen, Q. Li, Z. Yang, A. Beling, and J. C. Campbell, “Improved power conversion efficiency in high-performance photodiodes by flip-chip bonding on diamond,” Optica 1(6), 429–435 (2014).
[Crossref]

X. Xie, Q. Zhou, E. Norberg, M. Jacob-Mitos, Y. Chen, A. Ramaswamy, G. Fish, J. E. Bowers, J. C. Campbell, and A. Beling, “Heterogeneously Integrated Waveguide-Coupled Photodiodes on SOI with 12 dBm Output Power at 40 GHz,” in Optical Fiber Communication Conference Post Deadline Papers, OSA Technical Digest (online) (Optical Society of America, 2015), paper Th5B.7.
[Crossref]

A. Beling and J. C. Campbell, “Advances in photodetectors and optical receivers,” in Optical Fiber Telecommunications Volume VIA, I. Kaminow, ed. (Academic Press, 2013).
[Crossref]

Cardes, F.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Carpintero, G.

Cassan, E.

Chen, Y.

X. Xie, Q. Zhou, E. Norberg, M. Jacob-Mitos, Y. Chen, A. Ramaswamy, G. Fish, J. E. Bowers, J. C. Campbell, and A. Beling, “Heterogeneously Integrated Waveguide-Coupled Photodiodes on SOI with 12 dBm Output Power at 40 GHz,” in Optical Fiber Communication Conference Post Deadline Papers, OSA Technical Digest (online) (Optical Society of America, 2015), paper Th5B.7.
[Crossref]

Chtioui, M.

Cioccio, L. D.

P. Binetti, X. Leijtens, T. De Vries, Y. Oei, L. D. Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. Van Veldhoven, R. Notzel, and M. Smit, “InP/InGaAs photodetector on SOI photonic circuitry,” IEEE Photon. J. 2(3), 299–305 (2010).
[Crossref]

Crozat, P.

Davenport, M.

M. Heck, J. Bauters, M. Davenport, J. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. Bowers, “Hybrid silicon photonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

de Valicourt, G.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

De Vries, T.

P. Binetti, X. Leijtens, T. De Vries, Y. Oei, L. D. Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. Van Veldhoven, R. Notzel, and M. Smit, “InP/InGaAs photodetector on SOI photonic circuitry,” IEEE Photon. J. 2(3), 299–305 (2010).
[Crossref]

Descos, A.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Dolores-Calzadilla, V.

Doylend, J.

M. Heck, J. Bauters, M. Davenport, J. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. Bowers, “Hybrid silicon photonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

Duan, G.-H.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Fang, A.

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III–V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photon. Rev. 4(6), 751–779 (2010).
[Crossref]

Fedeli, J.-M.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

P. Binetti, X. Leijtens, T. De Vries, Y. Oei, L. D. Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. Van Veldhoven, R. Notzel, and M. Smit, “InP/InGaAs photodetector on SOI photonic circuitry,” IEEE Photon. J. 2(3), 299–305 (2010).
[Crossref]

Fédéli, J. M.

Fice, M.

Fish, G.

X. Xie, Q. Zhou, E. Norberg, M. Jacob-Mitos, Y. Chen, A. Ramaswamy, G. Fish, J. E. Bowers, J. C. Campbell, and A. Beling, “Heterogeneously Integrated Waveguide-Coupled Photodiodes on SOI with 12 dBm Output Power at 40 GHz,” in Optical Fiber Communication Conference Post Deadline Papers, OSA Technical Digest (online) (Optical Society of America, 2015), paper Th5B.7.
[Crossref]

Furuta, T.

T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma, and T. Furuta, “Uni-Traveling-Carrier Photodiodes,” in Ultrafast Electronics and Optoelectronics, OSA Trends in Optics and Photonics Series (Optical Society of America, 1997), paper UC3.

Geluk, E. J.

Girard, N.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Hartmann, J. M.

Heck, M.

M. Heck, J. Bauters, M. Davenport, J. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. Bowers, “Hybrid silicon photonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

Heiss, D.

A. Higuera-Rodriguez, V. Dolores-Calzadilla, Y. Jiao, E. J. Geluk, D. Heiss, and M. K. Smit, “Realization of efficient metal grating couplers for membrane-based integrated photonics,” Opt. Lett. 40(12), 2755–2757 (2015).
[Crossref] [PubMed]

L. Shen, V. Dolores-Calzadilla, C. Wullems, Y. Jiao, A. Millan-Mejia, A. Higuera-Rodriguez, D. Heiss, J. van der Tol, H. Ambrosius, G. Roelkens, and M. Smit, “Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices,” Opt. Mater. Express 5(2), 393–398 (2015).
[Crossref]

J. van der Tol, J. Pello, S. Bhat, Y. Jiao, D. Heiss, G. Roelkens, H. Ambrosius, and M. Smit, “Photonic integration in indium-phosphide membranes on silicon (IMOS),” Proc. SPIE 8988, 89880M (2014).
[Crossref]

Y. Jiao, D. Heiss, L. Shen, S. Bhat, M. Smit, and J. van der Tol, “First demonstration of an electrically pumped laser in the InP membrane on silicon platform,” in Advanced Photonics 2015, OSA Technical Digest (online) (Optical Society of America, 2015), paper IM4B.3.
[Crossref]

Higuera-Rodriguez, A.

Ishibashi, T.

T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma, and T. Furuta, “Uni-Traveling-Carrier Photodiodes,” in Ultrafast Electronics and Optoelectronics, OSA Trends in Optics and Photonics Series (Optical Society of America, 1997), paper UC3.

Ito, H.

T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma, and T. Furuta, “Uni-Traveling-Carrier Photodiodes,” in Ultrafast Electronics and Optoelectronics, OSA Trends in Optics and Photonics Series (Optical Society of America, 1997), paper UC3.

Jacob-Mitos, M.

X. Xie, Q. Zhou, E. Norberg, M. Jacob-Mitos, Y. Chen, A. Ramaswamy, G. Fish, J. E. Bowers, J. C. Campbell, and A. Beling, “Heterogeneously Integrated Waveguide-Coupled Photodiodes on SOI with 12 dBm Output Power at 40 GHz,” in Optical Fiber Communication Conference Post Deadline Papers, OSA Technical Digest (online) (Optical Society of America, 2015), paper Th5B.7.
[Crossref]

Jain, S.

M. Heck, J. Bauters, M. Davenport, J. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. Bowers, “Hybrid silicon photonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

Jany, C.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Jiao, Y.

L. Shen, V. Dolores-Calzadilla, C. Wullems, Y. Jiao, A. Millan-Mejia, A. Higuera-Rodriguez, D. Heiss, J. van der Tol, H. Ambrosius, G. Roelkens, and M. Smit, “Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices,” Opt. Mater. Express 5(2), 393–398 (2015).
[Crossref]

A. Higuera-Rodriguez, V. Dolores-Calzadilla, Y. Jiao, E. J. Geluk, D. Heiss, and M. K. Smit, “Realization of efficient metal grating couplers for membrane-based integrated photonics,” Opt. Lett. 40(12), 2755–2757 (2015).
[Crossref] [PubMed]

Y. Jiao, T. d. Vries, R. Unger, L. Shen, H. Ambrosius, C. Radu, M. Arens, M. Smit, and J. van der Tol, “Vertical and smooth single-step Reactive Ion Etching process for InP membrane waveguides,” J. Electrochem. Soc. 162(8), E90–E95 (2015).
[Crossref]

J. van der Tol, J. Pello, S. Bhat, Y. Jiao, D. Heiss, G. Roelkens, H. Ambrosius, and M. Smit, “Photonic integration in indium-phosphide membranes on silicon (IMOS),” Proc. SPIE 8988, 89880M (2014).
[Crossref]

Y. Jiao, J. Pello, A. Millan-Mejia, L. Shen, B. Smalbrugge, E. J. Geluk, M. Smit, and J. van der Tol, “Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices,” Opt. Lett. 39(6), 1645–1648 (2014).
[Crossref] [PubMed]

Y. Jiao, D. Heiss, L. Shen, S. Bhat, M. Smit, and J. van der Tol, “First demonstration of an electrically pumped laser in the InP membrane on silicon platform,” in Advanced Photonics 2015, OSA Technical Digest (online) (Optical Society of America, 2015), paper IM4B.3.
[Crossref]

L. Shen, S. Bhat, Y. Jiao, J. van der Tol, G. Roelkens, and M. Smit, “Towards a high bandwidth waveguide photodetector in an InP membrane on silicon,” in 17th European Conference on Integrated Optics (ECIO), (2014), paper Th 4a R12.

L. Shen, Y. Jiao, L. Augstin, K. Sander, J. van der Tol, H. Ambrosius, G. Roelkens, and M. Smit, “A low-resistance spiking-free n-type ohmic contact for InP membrane devices,” in 26th International Conference on Indium Phosphide and Related Materials (IPRM), (IEEE, 2014), pp. 1–2.

Jones, R.

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III–V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photon. Rev. 4(6), 751–779 (2010).
[Crossref]

Kaspar, P.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Keyvaninia, S.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

S. Keyvaninia, M. Muneeb, S. Stankovi, P. J. Van Veldhoven, D. Van Thourhout, and G. Roelkens, “Ultra-thin DVS-BCB adhesive bonding of III–V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate,” Opt. Mater. Express 3, (1)35–46 (2013).
[Crossref]

Knoll, D.

Koch, B.

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III–V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photon. Rev. 4(6), 751–779 (2010).
[Crossref]

Kodama, S.

T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma, and T. Furuta, “Uni-Traveling-Carrier Photodiodes,” in Ultrafast Electronics and Optoelectronics, OSA Trends in Optics and Photonics Series (Optical Society of America, 1997), paper UC3.

Kopp, C.

Kroh, M.

Krune, E.

Kurczveil, G.

M. Heck, J. Bauters, M. Davenport, J. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. Bowers, “Hybrid silicon photonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

Lagahe, C.

P. Binetti, X. Leijtens, T. De Vries, Y. Oei, L. D. Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. Van Veldhoven, R. Notzel, and M. Smit, “InP/InGaAs photodetector on SOI photonic circuitry,” IEEE Photon. J. 2(3), 299–305 (2010).
[Crossref]

Lamponi, M.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Leijtens, X.

P. Binetti, X. Leijtens, T. De Vries, Y. Oei, L. D. Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. Van Veldhoven, R. Notzel, and M. Smit, “InP/InGaAs photodetector on SOI photonic circuitry,” IEEE Photon. J. 2(3), 299–305 (2010).
[Crossref]

Lelarge, F.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

E. Rouvalis, M. Chtioui, F. van Dijk, F. Lelarge, M. Fice, C. Renaud, G. Carpintero, and A. Seeds, “170 Ghz uni-traveling carrier photodiodes for InP-based photonic integrated circuits,” Opt. Express 20(18), 20090–20095 (2012).
[Crossref] [PubMed]

Levaufre, G.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Li, J.

Li, K.

Li, Q.

Liang, D.

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III–V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photon. Rev. 4(6), 751–779 (2010).
[Crossref]

Liepvre, A.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Lischke, S.

Liu, L.

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III–V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photon. Rev. 4(6), 751–779 (2010).
[Crossref]

Luo, Y.

Mai, A.

Mai, C.

Make, D.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Marris-Morini, D.

Maruyama, T.

S. Arai, N. Nishiyama, T. Maruyama, and T. Okumura, “GaInAsP/InP membrane lasers for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1381–1389 (2011).
[Crossref]

Menezo, S.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Messaoudene, S.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Miao, D.

Millan-Mejia, A.

Muneeb, M.

Nagatsuma, T.

T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma, and T. Furuta, “Uni-Traveling-Carrier Photodiodes,” in Ultrafast Electronics and Optoelectronics, OSA Trends in Optics and Photonics Series (Optical Society of America, 1997), paper UC3.

Nishiyama, N.

S. Arai, N. Nishiyama, T. Maruyama, and T. Okumura, “GaInAsP/InP membrane lasers for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1381–1389 (2011).
[Crossref]

Norberg, E.

X. Xie, Q. Zhou, E. Norberg, M. Jacob-Mitos, Y. Chen, A. Ramaswamy, G. Fish, J. E. Bowers, J. C. Campbell, and A. Beling, “Heterogeneously Integrated Waveguide-Coupled Photodiodes on SOI with 12 dBm Output Power at 40 GHz,” in Optical Fiber Communication Conference Post Deadline Papers, OSA Technical Digest (online) (Optical Society of America, 2015), paper Th5B.7.
[Crossref]

Notzel, R.

P. Binetti, X. Leijtens, T. De Vries, Y. Oei, L. D. Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. Van Veldhoven, R. Notzel, and M. Smit, “InP/InGaAs photodetector on SOI photonic circuitry,” IEEE Photon. J. 2(3), 299–305 (2010).
[Crossref]

Oei, Y.

P. Binetti, X. Leijtens, T. De Vries, Y. Oei, L. D. Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. Van Veldhoven, R. Notzel, and M. Smit, “InP/InGaAs photodetector on SOI photonic circuitry,” IEEE Photon. J. 2(3), 299–305 (2010).
[Crossref]

Okumura, T.

S. Arai, N. Nishiyama, T. Maruyama, and T. Okumura, “GaInAsP/InP membrane lasers for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1381–1389 (2011).
[Crossref]

Osmond, J.

Peczek, A.

Pello, J.

J. van der Tol, J. Pello, S. Bhat, Y. Jiao, D. Heiss, G. Roelkens, H. Ambrosius, and M. Smit, “Photonic integration in indium-phosphide membranes on silicon (IMOS),” Proc. SPIE 8988, 89880M (2014).
[Crossref]

Y. Jiao, J. Pello, A. Millan-Mejia, L. Shen, B. Smalbrugge, E. J. Geluk, M. Smit, and J. van der Tol, “Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices,” Opt. Lett. 39(6), 1645–1648 (2014).
[Crossref] [PubMed]

Piels, M.

Polzer, A.

Radu, C.

Y. Jiao, T. d. Vries, R. Unger, L. Shen, H. Ambrosius, C. Radu, M. Arens, M. Smit, and J. van der Tol, “Vertical and smooth single-step Reactive Ion Etching process for InP membrane waveguides,” J. Electrochem. Soc. 162(8), E90–E95 (2015).
[Crossref]

Ramaswamy, A.

X. Xie, Q. Zhou, E. Norberg, M. Jacob-Mitos, Y. Chen, A. Ramaswamy, G. Fish, J. E. Bowers, J. C. Campbell, and A. Beling, “Heterogeneously Integrated Waveguide-Coupled Photodiodes on SOI with 12 dBm Output Power at 40 GHz,” in Optical Fiber Communication Conference Post Deadline Papers, OSA Technical Digest (online) (Optical Society of America, 2015), paper Th5B.7.
[Crossref]

Reed, G.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Renaud, C.

Roelkens, G.

L. Shen, V. Dolores-Calzadilla, C. Wullems, Y. Jiao, A. Millan-Mejia, A. Higuera-Rodriguez, D. Heiss, J. van der Tol, H. Ambrosius, G. Roelkens, and M. Smit, “Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices,” Opt. Mater. Express 5(2), 393–398 (2015).
[Crossref]

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

J. van der Tol, J. Pello, S. Bhat, Y. Jiao, D. Heiss, G. Roelkens, H. Ambrosius, and M. Smit, “Photonic integration in indium-phosphide membranes on silicon (IMOS),” Proc. SPIE 8988, 89880M (2014).
[Crossref]

S. Keyvaninia, M. Muneeb, S. Stankovi, P. J. Van Veldhoven, D. Van Thourhout, and G. Roelkens, “Ultra-thin DVS-BCB adhesive bonding of III–V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate,” Opt. Mater. Express 3, (1)35–46 (2013).
[Crossref]

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III–V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photon. Rev. 4(6), 751–779 (2010).
[Crossref]

L. Shen, S. Bhat, Y. Jiao, J. van der Tol, G. Roelkens, and M. Smit, “Towards a high bandwidth waveguide photodetector in an InP membrane on silicon,” in 17th European Conference on Integrated Optics (ECIO), (2014), paper Th 4a R12.

L. Shen, Y. Jiao, L. Augstin, K. Sander, J. van der Tol, H. Ambrosius, G. Roelkens, and M. Smit, “A low-resistance spiking-free n-type ohmic contact for InP membrane devices,” in 26th International Conference on Indium Phosphide and Related Materials (IPRM), (IEEE, 2014), pp. 1–2.

Rouvalis, E.

Sander, K.

L. Shen, Y. Jiao, L. Augstin, K. Sander, J. van der Tol, H. Ambrosius, G. Roelkens, and M. Smit, “A low-resistance spiking-free n-type ohmic contact for InP membrane devices,” in 26th International Conference on Indium Phosphide and Related Materials (IPRM), (IEEE, 2014), pp. 1–2.

Seeds, A.

Shen, L.

L. Shen, V. Dolores-Calzadilla, C. Wullems, Y. Jiao, A. Millan-Mejia, A. Higuera-Rodriguez, D. Heiss, J. van der Tol, H. Ambrosius, G. Roelkens, and M. Smit, “Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices,” Opt. Mater. Express 5(2), 393–398 (2015).
[Crossref]

Y. Jiao, T. d. Vries, R. Unger, L. Shen, H. Ambrosius, C. Radu, M. Arens, M. Smit, and J. van der Tol, “Vertical and smooth single-step Reactive Ion Etching process for InP membrane waveguides,” J. Electrochem. Soc. 162(8), E90–E95 (2015).
[Crossref]

Y. Jiao, J. Pello, A. Millan-Mejia, L. Shen, B. Smalbrugge, E. J. Geluk, M. Smit, and J. van der Tol, “Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices,” Opt. Lett. 39(6), 1645–1648 (2014).
[Crossref] [PubMed]

Y. Jiao, D. Heiss, L. Shen, S. Bhat, M. Smit, and J. van der Tol, “First demonstration of an electrically pumped laser in the InP membrane on silicon platform,” in Advanced Photonics 2015, OSA Technical Digest (online) (Optical Society of America, 2015), paper IM4B.3.
[Crossref]

L. Shen, Y. Jiao, L. Augstin, K. Sander, J. van der Tol, H. Ambrosius, G. Roelkens, and M. Smit, “A low-resistance spiking-free n-type ohmic contact for InP membrane devices,” in 26th International Conference on Indium Phosphide and Related Materials (IPRM), (IEEE, 2014), pp. 1–2.

L. Shen, S. Bhat, Y. Jiao, J. van der Tol, G. Roelkens, and M. Smit, “Towards a high bandwidth waveguide photodetector in an InP membrane on silicon,” in 17th European Conference on Integrated Optics (ECIO), (2014), paper Th 4a R12.

Shen, Y.

Shimizu, N.

T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma, and T. Furuta, “Uni-Traveling-Carrier Photodiodes,” in Ultrafast Electronics and Optoelectronics, OSA Trends in Optics and Photonics Series (Optical Society of America, 1997), paper UC3.

Smalbrugge, B.

Smit, M.

L. Shen, V. Dolores-Calzadilla, C. Wullems, Y. Jiao, A. Millan-Mejia, A. Higuera-Rodriguez, D. Heiss, J. van der Tol, H. Ambrosius, G. Roelkens, and M. Smit, “Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices,” Opt. Mater. Express 5(2), 393–398 (2015).
[Crossref]

Y. Jiao, T. d. Vries, R. Unger, L. Shen, H. Ambrosius, C. Radu, M. Arens, M. Smit, and J. van der Tol, “Vertical and smooth single-step Reactive Ion Etching process for InP membrane waveguides,” J. Electrochem. Soc. 162(8), E90–E95 (2015).
[Crossref]

J. van der Tol, J. Pello, S. Bhat, Y. Jiao, D. Heiss, G. Roelkens, H. Ambrosius, and M. Smit, “Photonic integration in indium-phosphide membranes on silicon (IMOS),” Proc. SPIE 8988, 89880M (2014).
[Crossref]

Y. Jiao, J. Pello, A. Millan-Mejia, L. Shen, B. Smalbrugge, E. J. Geluk, M. Smit, and J. van der Tol, “Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices,” Opt. Lett. 39(6), 1645–1648 (2014).
[Crossref] [PubMed]

P. Binetti, X. Leijtens, T. De Vries, Y. Oei, L. D. Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. Van Veldhoven, R. Notzel, and M. Smit, “InP/InGaAs photodetector on SOI photonic circuitry,” IEEE Photon. J. 2(3), 299–305 (2010).
[Crossref]

Y. Jiao, D. Heiss, L. Shen, S. Bhat, M. Smit, and J. van der Tol, “First demonstration of an electrically pumped laser in the InP membrane on silicon platform,” in Advanced Photonics 2015, OSA Technical Digest (online) (Optical Society of America, 2015), paper IM4B.3.
[Crossref]

L. Shen, S. Bhat, Y. Jiao, J. van der Tol, G. Roelkens, and M. Smit, “Towards a high bandwidth waveguide photodetector in an InP membrane on silicon,” in 17th European Conference on Integrated Optics (ECIO), (2014), paper Th 4a R12.

L. Shen, Y. Jiao, L. Augstin, K. Sander, J. van der Tol, H. Ambrosius, G. Roelkens, and M. Smit, “A low-resistance spiking-free n-type ohmic contact for InP membrane devices,” in 26th International Conference on Indium Phosphide and Related Materials (IPRM), (IEEE, 2014), pp. 1–2.

Smit, M. K.

Srinivasan, S.

M. Heck, J. Bauters, M. Davenport, J. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. Bowers, “Hybrid silicon photonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

Stankovi, S.

Sun, C.

Tang, Y.

M. Heck, J. Bauters, M. Davenport, J. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. Bowers, “Hybrid silicon photonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

Thomson, D.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

Trusch, A.

Unger, R.

Y. Jiao, T. d. Vries, R. Unger, L. Shen, H. Ambrosius, C. Radu, M. Arens, M. Smit, and J. van der Tol, “Vertical and smooth single-step Reactive Ion Etching process for InP membrane waveguides,” J. Electrochem. Soc. 162(8), E90–E95 (2015).
[Crossref]

Van Campenhout, J.

P. Binetti, X. Leijtens, T. De Vries, Y. Oei, L. D. Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. Van Veldhoven, R. Notzel, and M. Smit, “InP/InGaAs photodetector on SOI photonic circuitry,” IEEE Photon. J. 2(3), 299–305 (2010).
[Crossref]

van der Tol, J.

L. Shen, V. Dolores-Calzadilla, C. Wullems, Y. Jiao, A. Millan-Mejia, A. Higuera-Rodriguez, D. Heiss, J. van der Tol, H. Ambrosius, G. Roelkens, and M. Smit, “Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices,” Opt. Mater. Express 5(2), 393–398 (2015).
[Crossref]

Y. Jiao, T. d. Vries, R. Unger, L. Shen, H. Ambrosius, C. Radu, M. Arens, M. Smit, and J. van der Tol, “Vertical and smooth single-step Reactive Ion Etching process for InP membrane waveguides,” J. Electrochem. Soc. 162(8), E90–E95 (2015).
[Crossref]

J. van der Tol, J. Pello, S. Bhat, Y. Jiao, D. Heiss, G. Roelkens, H. Ambrosius, and M. Smit, “Photonic integration in indium-phosphide membranes on silicon (IMOS),” Proc. SPIE 8988, 89880M (2014).
[Crossref]

Y. Jiao, J. Pello, A. Millan-Mejia, L. Shen, B. Smalbrugge, E. J. Geluk, M. Smit, and J. van der Tol, “Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices,” Opt. Lett. 39(6), 1645–1648 (2014).
[Crossref] [PubMed]

Y. Jiao, D. Heiss, L. Shen, S. Bhat, M. Smit, and J. van der Tol, “First demonstration of an electrically pumped laser in the InP membrane on silicon platform,” in Advanced Photonics 2015, OSA Technical Digest (online) (Optical Society of America, 2015), paper IM4B.3.
[Crossref]

L. Shen, S. Bhat, Y. Jiao, J. van der Tol, G. Roelkens, and M. Smit, “Towards a high bandwidth waveguide photodetector in an InP membrane on silicon,” in 17th European Conference on Integrated Optics (ECIO), (2014), paper Th 4a R12.

L. Shen, Y. Jiao, L. Augstin, K. Sander, J. van der Tol, H. Ambrosius, G. Roelkens, and M. Smit, “A low-resistance spiking-free n-type ohmic contact for InP membrane devices,” in 26th International Conference on Indium Phosphide and Related Materials (IPRM), (IEEE, 2014), pp. 1–2.

van Dijk, F.

van Thourhout, D.

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

S. Keyvaninia, M. Muneeb, S. Stankovi, P. J. Van Veldhoven, D. Van Thourhout, and G. Roelkens, “Ultra-thin DVS-BCB adhesive bonding of III–V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate,” Opt. Mater. Express 3, (1)35–46 (2013).
[Crossref]

P. Binetti, X. Leijtens, T. De Vries, Y. Oei, L. D. Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. Van Veldhoven, R. Notzel, and M. Smit, “InP/InGaAs photodetector on SOI photonic circuitry,” IEEE Photon. J. 2(3), 299–305 (2010).
[Crossref]

Van Veldhoven, P.

P. Binetti, X. Leijtens, T. De Vries, Y. Oei, L. D. Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. Van Veldhoven, R. Notzel, and M. Smit, “InP/InGaAs photodetector on SOI photonic circuitry,” IEEE Photon. J. 2(3), 299–305 (2010).
[Crossref]

Van Veldhoven, P. J.

Vivien, L.

Voigt, K.

Vries, T. d.

Y. Jiao, T. d. Vries, R. Unger, L. Shen, H. Ambrosius, C. Radu, M. Arens, M. Smit, and J. van der Tol, “Vertical and smooth single-step Reactive Ion Etching process for InP membrane waveguides,” J. Electrochem. Soc. 162(8), E90–E95 (2015).
[Crossref]

Wey, Y.

J. Bowers and Y. Wey, “High-speed photodetectors,” in Handbook of optics Volume I: fundamentals, techniques, and design, M. Bass, ed. 2nd ed. (McGraw-Hill, 1995).

Wullems, C.

Xie, X.

X. Xie, Q. Zhou, K. Li, Y. Shen, Q. Li, Z. Yang, A. Beling, and J. C. Campbell, “Improved power conversion efficiency in high-performance photodiodes by flip-chip bonding on diamond,” Optica 1(6), 429–435 (2014).
[Crossref]

X. Xie, Q. Zhou, E. Norberg, M. Jacob-Mitos, Y. Chen, A. Ramaswamy, G. Fish, J. E. Bowers, J. C. Campbell, and A. Beling, “Heterogeneously Integrated Waveguide-Coupled Photodiodes on SOI with 12 dBm Output Power at 40 GHz,” in Optical Fiber Communication Conference Post Deadline Papers, OSA Technical Digest (online) (Optical Society of America, 2015), paper Th5B.7.
[Crossref]

Xiong, B.

Yang, Z.

Zhou, Q.

X. Xie, Q. Zhou, K. Li, Y. Shen, Q. Li, Z. Yang, A. Beling, and J. C. Campbell, “Improved power conversion efficiency in high-performance photodiodes by flip-chip bonding on diamond,” Optica 1(6), 429–435 (2014).
[Crossref]

X. Xie, Q. Zhou, E. Norberg, M. Jacob-Mitos, Y. Chen, A. Ramaswamy, G. Fish, J. E. Bowers, J. C. Campbell, and A. Beling, “Heterogeneously Integrated Waveguide-Coupled Photodiodes on SOI with 12 dBm Output Power at 40 GHz,” in Optical Fiber Communication Conference Post Deadline Papers, OSA Technical Digest (online) (Optical Society of America, 2015), paper Th5B.7.
[Crossref]

Zimmermann, H.

Zimmermann, L.

IEEE J. Sel. Top. Quantum Electron. (3)

S. Arai, N. Nishiyama, T. Maruyama, and T. Okumura, “GaInAsP/InP membrane lasers for optical interconnects,” IEEE J. Sel. Top. Quantum Electron. 17(5), 1381–1389 (2011).
[Crossref]

M. Heck, J. Bauters, M. Davenport, J. Doylend, S. Jain, G. Kurczveil, S. Srinivasan, Y. Tang, and J. Bowers, “Hybrid silicon photonic integrated circuit technology,” IEEE J. Sel. Top. Quantum Electron. 19(4), 6100117 (2013).
[Crossref]

G.-H. Duan, C. Jany, A. Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, N. Girard, F. Lelarge, J.-M. Fedeli, A. Descos, B. Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. van Thourhout, D. Thomson, F. Cardes, and G. Reed, “Hybrid III–V on silicon lasers for photonic integrated circuits on silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 158–170 (2014).
[Crossref]

IEEE Photon. J. (1)

P. Binetti, X. Leijtens, T. De Vries, Y. Oei, L. D. Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. Van Veldhoven, R. Notzel, and M. Smit, “InP/InGaAs photodetector on SOI photonic circuitry,” IEEE Photon. J. 2(3), 299–305 (2010).
[Crossref]

J. Electrochem. Soc. (1)

Y. Jiao, T. d. Vries, R. Unger, L. Shen, H. Ambrosius, C. Radu, M. Arens, M. Smit, and J. van der Tol, “Vertical and smooth single-step Reactive Ion Etching process for InP membrane waveguides,” J. Electrochem. Soc. 162(8), E90–E95 (2015).
[Crossref]

J. Lightwave Technol. (1)

Laser Photon. Rev. (1)

G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III–V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photon. Rev. 4(6), 751–779 (2010).
[Crossref]

Opt. Express (4)

Opt. Lett. (2)

Opt. Mater. Express (2)

Optica (1)

Proc. SPIE (1)

J. van der Tol, J. Pello, S. Bhat, Y. Jiao, D. Heiss, G. Roelkens, H. Ambrosius, and M. Smit, “Photonic integration in indium-phosphide membranes on silicon (IMOS),” Proc. SPIE 8988, 89880M (2014).
[Crossref]

Other (7)

T. Ishibashi, N. Shimizu, S. Kodama, H. Ito, T. Nagatsuma, and T. Furuta, “Uni-Traveling-Carrier Photodiodes,” in Ultrafast Electronics and Optoelectronics, OSA Trends in Optics and Photonics Series (Optical Society of America, 1997), paper UC3.

Y. Jiao, D. Heiss, L. Shen, S. Bhat, M. Smit, and J. van der Tol, “First demonstration of an electrically pumped laser in the InP membrane on silicon platform,” in Advanced Photonics 2015, OSA Technical Digest (online) (Optical Society of America, 2015), paper IM4B.3.
[Crossref]

A. Beling and J. C. Campbell, “Advances in photodetectors and optical receivers,” in Optical Fiber Telecommunications Volume VIA, I. Kaminow, ed. (Academic Press, 2013).
[Crossref]

X. Xie, Q. Zhou, E. Norberg, M. Jacob-Mitos, Y. Chen, A. Ramaswamy, G. Fish, J. E. Bowers, J. C. Campbell, and A. Beling, “Heterogeneously Integrated Waveguide-Coupled Photodiodes on SOI with 12 dBm Output Power at 40 GHz,” in Optical Fiber Communication Conference Post Deadline Papers, OSA Technical Digest (online) (Optical Society of America, 2015), paper Th5B.7.
[Crossref]

J. Bowers and Y. Wey, “High-speed photodetectors,” in Handbook of optics Volume I: fundamentals, techniques, and design, M. Bass, ed. 2nd ed. (McGraw-Hill, 1995).

L. Shen, Y. Jiao, L. Augstin, K. Sander, J. van der Tol, H. Ambrosius, G. Roelkens, and M. Smit, “A low-resistance spiking-free n-type ohmic contact for InP membrane devices,” in 26th International Conference on Indium Phosphide and Related Materials (IPRM), (IEEE, 2014), pp. 1–2.

L. Shen, S. Bhat, Y. Jiao, J. van der Tol, G. Roelkens, and M. Smit, “Towards a high bandwidth waveguide photodetector in an InP membrane on silicon,” in 17th European Conference on Integrated Optics (ECIO), (2014), paper Th 4a R12.

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Figures (7)

Fig. 1
Fig. 1 (a) Schematic cross-section of the UTC-PD. Layer thickness in nm. (b) Microscopic top view of a fabricated device. (c) SEM photo taken before the process step of planarization using polyimide (the step shown in Fig. 2(f)). (d) SEM photo of the final device.
Fig. 2
Fig. 2 Fabrication flow of the double-sided processed UTC-PD. (a) InP layer-stack; (b) p-contact formation, p-InGaAs etch, and alignment-marker etch; (c) bonding to Si wafer using BCB; (d) InP substrate etch; (e) n-contact formation, PD mesa etch, and passive WG/grating etch; (f) polyimide planarization, p-contact opening, and final metalization for GSG pads.
Fig. 3
Fig. 3 (a) Responsivity versus wavelength of a 3×10 μm2 UTC-PD measured at −4 V; the inset shows the measured dark current versus bias voltage. (b) Responsivity as a function of the length of the UTC-PDs. Both measurement data and simulation results are shown.
Fig. 4
Fig. 4 (a) Bias dependent photocurrent versus optical power coupled to the UTC-PD. (b) Simulated electric field distribution in the vertical direction of the UTC-PD at zero bias and 1 mA photocurrent. (c) Simulated conduction band discontinuity at the InGaAs/InP interface.
Fig. 5
Fig. 5 Normalized frequency response (S21) of a 3×10 μm2 UTC-PD measured at different bias voltages.
Fig. 6
Fig. 6 (a) Real part and imaginary part of the reflection coefficient (S22) of a 3×10 μm2 UTC-PD. Results from measurements and modeling are both shown. (b) The equivalent circuit model of the UTC-PD. (c) Bias dependence of the junction capacitance (Cj) extracted from the model. (d) Cj of different UTC-PDs as a function of the junction area. (e) Series resistance (Rs) of different UTC-PDs versus their length.
Fig. 7
Fig. 7 Reference optical eye diagrams output from the commercial modulator at (a) 40 Gb/s and (b) 54 Gb/s, along with the associated electrical eye diagrams output from the 3×10 μm2 UTC-PD at (c) 40 Gb/s and (d) 54 Gb/s.

Equations (1)

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f tr = 1 2 π ( τ a + 0.29 τ c ) ,

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