Abstract

In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the laser Bragg reflectors.

© 2016 Optical Society of America

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2016 (7)

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

T. Ferrotti, H. Duprez, C. Jany, A. Chantre, C. Seassal, and B. Ben Bakir, “O-band III-V-on-Amorphous-Silicon Lasers Integrated With a Surface Grating Coupler,” IEEE Photonics Technol. Lett. 28(18), 1944–1947 (2016).
[Crossref]

O. Dubray, A. Abraham, K. Hassan, S. Olivier, D. Marris-Morini, L. Vivien, I. O’Connor, and S. Menezo, “Electro-optical ring modulator: an ultra-compact model for the comparison and optimization of PN, PIN, and capacitive junction,” IEEE J. Sel. Top. Quantum Electron. 22(6), 1–10 (2016).
[Crossref]

J. Durel, T. Ferrotti, A. Chantre, S. Crémer, J. Harduin, S. Bernabé, C. Kopp, F. Bœuf, B. Ben Bakir, and J. E. Broquin, “Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics,” Proc. SPIE 9750, 97500 (2016).

D. Mahgerefteh, C. Thompson, C. Cole, G. Denoyer, T. Nguyen, I. Lyubomirsky, C. Kocot, and J. Tatum, “Techno-Economic Comparison of Silicon Photonics and Multimode VCSELs,” J. Lightwave Technol. 34(2), 233–242 (2016).
[Crossref]

F. Boeuf, S. Cremer, E. Temporiti, M. Fere, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. Le Maitre, M. Traldi, and L. Maggi, “Silicon Photonics R&D and Manufacturing on 300-mm Wafer Platform,” J. Lightwave Technol. 34(2), 286–295 (2016).
[Crossref]

S. Kupijai, H. Rhee, A. Al-Saadi, M. Henniges, D. Bronzi, D. Selicke, C. Theiss, S. Otte, H. J. Eichler, U. Woggon, D. Stolarek, H. H. Richter, L. Zimmermann, B. Tillack, and S. Meister, “25 Gb/s Silicon Photonics Interconnect Using a Transmitter Based on a Node-Matched-Diode Modulator,” J. Lightwave Technol. 34(12), 2920–2923 (2016).
[Crossref]

2015 (6)

H. Duprez, A. Descos, T. Ferrotti, C. Sciancalepore, C. Jany, K. Hassan, C. Seassal, S. Menezo, and B. Ben Bakir, “1310 nm hybrid InP/InGaAsP on Silicon Distributed Feedback Laser With High Side-Mode Suppression Ratio,” Opt. Express 23(7), 8489–8497 (2015).
[Crossref] [PubMed]

D. Patel, S. Ghosh, M. Chagnon, A. Samani, V. Veerasubramanian, M. Osman, and D. V. Plant, “Design, analysis, and transmission system performance of a 41 GHz silicon photonic modulator,” Opt. Express 23(11), 14263–14287 (2015).
[Crossref] [PubMed]

X. Luo, Y. Cao, J. Song, X. Hu, Y. Cheng, C. Li, C. Liu, T. Y. Liow, M. Yu, H. Wang, Q. J. Wang, and P. Guo-Qiang Lo, “High-throughput multiple dies-to-wafer bonding technology and III/V-on-Si hybrid lasers for heterogeneous integration of optoelectronic integrated circuits,” Frontiers in Materials 2(28), 1–21 (2015).

R. Geiger, T. Zabel, and H. Sigg, “Group IV direct band gap photonics: methods, challenges, and opportunities,” Frontiers in Material 2(52), 1–18 (2015).

D. H. Lee, S. J. Choo, U. Jung, K. W. Lee, K. W. Kim, and J. H. Park, “Low-loss silicon waveguides with sidewall roughness reduction using a SiO2 hard mask and fluorine-based dry etching,” J. Micromech. Microeng. 25(1), 015003 (2015).
[Crossref]

C. Sciancalepore, R. J. Lycett, J. A. Dallery, S. Pauliac, K. Hassan, J. Harduin, H. Duprez, U. Weidenmueller, D. F. G. Gallagher, S. Menezo, and B. Ben Bakir, “Low-crosstalk fabrication-insensitive echelle grating demultiplexers,” IEEE Photonics Technol. Lett. 27(5), 494–497 (2015).
[Crossref]

2014 (5)

S. Tanaka, T. Akiyama, S. Sekiguchi, and K. Morito, “Silicon Photonics Optical Transmitter Technology for Tb/s-class I/O Co-packaged with CPU,” Fujitsu Sci. Tech. J. 50(1), 123–131 (2014).

G. H. Duan, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, G. Nils, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, Y. G. Gardes, and G. T. Reed, “Hybrid III-V on Silicon Lasers for Photonic Integrated Circuits on Silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100213 (2014).

H. Xu, X. Li, X. Xiao, Z. Li, Y. Yu, and J. Yu, “Demonstration and Characterization of High-Speed Silicon Depletion-Mode Mach–Zehnder Modulators,” IEEE J. Sel. Top. Quantum Electron. 20(4), 3400110 (2014).

R. Ding, Y. Liu, Y. Ma, Y. Yang, Q. Li, A. Eu-Jin Lim, G. Q. Lo, K. Bergman, T. Baehr-Jones, and M. Hochberg, “High-speed Silicon Modulator With Slow-Wave Electrodes and Fully Independent Differential Drive,” J. Lightwave Technol. 32(12), 2240–2247 (2014).
[Crossref]

P. Dong, T.-C. Hu, T.-Y. Liow, Y.-K. Chen, C. Xie, X. Luo, G.-Q. Lo, R. Kopf, and A. Tate, “Novel integration technique for silicon/III-V hybrid laser,” Opt. Express 22(22), 26854–26861 (2014).
[Crossref] [PubMed]

2013 (6)

Y. Liu, S. Dunham, T. Baehr-Jones, A. Eu-Jin Lim, G. Q. Lo, and M. Hochberg, “Ultra-Responsive Phase Shifters for Depletion Mode Silicon Modulators,” J. Lightwave Technol. 31(23), 3787–3793 (2013).
[Crossref]

B. Snyder, B. Corbett, and P. O’Brien, “Hybrid Integration of the Wavelength-Tunable Laser With a Silicon Photonic Integrated Circuit,” J. Lightwave Technol. 31(24), 3934–3942 (2013).
[Crossref]

M. Streshinsky, R. Ding, Y. Liu, A. Novack, Y. Yang, Y. Ma, X. Tu, E. K. S. Chee, A. E. J. Lim, P. G. Q. Lo, T. Baehr-Jones, and M. Hochberg, “Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm,” Opt. Express 21(25), 30350–30357 (2013).
[Crossref] [PubMed]

S. Keyvaninia, S. Verstuyft, L. Van Landschoot, F. Lelarge, G.-H. Duan, S. Messaoudene, J. M. Fedeli, T. De Vries, B. Smalbrugge, E. J. Geluk, J. Bolk, M. Smit, G. Morthier, D. Van Thourhout, and G. Roelkens, “Heterogeneously integrated III-V/silicon distributed feedback lasers,” Opt. Lett. 38(24), 5434–5437 (2013).
[Crossref] [PubMed]

L. Yuan, L. Tao, H. Yu, W. Chen, D. Lu, Y. Li, G. Ran, and J. Pan, “Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method,” IEEE Photonics Technol. Lett. 25(12), 1180–1183 (2013).
[Crossref]

L. Virot, L. Vivien, J. M. Fédéli, Y. Bogumilowicz, J. M. Hartmann, F. Bœuf, P. Crozat, D. Marris-Morini, and E. Cassan, “High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications,” Photonics Research 1(3), 140–147 (2013).
[Crossref]

2012 (3)

2011 (3)

2009 (1)

2008 (1)

A. W. Fang, B. R. Koch, R. Jones, E. Lively, D. Liang, Y.-H. Kuo, and J. E. Bowers, “A Distributed Bragg Reflector Silicon Evanescent Laser,” IEEE Photonics Technol. Lett. 20(20), 1667–1669 (2008).
[Crossref]

2007 (1)

2006 (1)

2005 (1)

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[Crossref] [PubMed]

1987 (1)

R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron. 23(1), 123–129 (1987).
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Abraham, A.

O. Dubray, A. Abraham, K. Hassan, S. Olivier, D. Marris-Morini, L. Vivien, I. O’Connor, and S. Menezo, “Electro-optical ring modulator: an ultra-compact model for the comparison and optimization of PN, PIN, and capacitive junction,” IEEE J. Sel. Top. Quantum Electron. 22(6), 1–10 (2016).
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Absil, P.

M. Pantouvaki, P. Verheyen, J. De Coster, G. Lepage, P. Absil, and J. Van Campenhout, “56Gb/s Ring Modulator on a 300mm Silicon Photonics Platform,” in Proceedings of IEEE European Conference on Optical Communications, (IEEE, 2015), pp. 1–3.
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Accard, A.

G. H. Duan, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, G. Nils, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, Y. G. Gardes, and G. T. Reed, “Hybrid III-V on Silicon Lasers for Photonic Integrated Circuits on Silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100213 (2014).

Adachi, K.

T. Suzuki, K. R. Tamura, K. Adachi, A. Takei, A. Nakanishi, K. Nuoe, T. Ohtoshi, K. Nakahara, and S. Tanaka, “Simple Method for Integrating DFB Laser and Silicon Photonics Platform,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2015), pp. 27–28.
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Adams, D.

M. Webster, P. Gothoskar, V. Patel, D. Piede, S. Anderson, R. Tummidi, D. Adams, C. Appel, P. Metz, S. Sunder, B. Dama, and K. Shastri, “An Efficient MOS-Capacitor based Silicon Modulator and CMOS Drivers for Optical Transmitters,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2014), pp. 1–2.
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Akiyama, T.

S. Tanaka, T. Akiyama, S. Sekiguchi, and K. Morito, “Silicon Photonics Optical Transmitter Technology for Tb/s-class I/O Co-packaged with CPU,” Fujitsu Sci. Tech. J. 50(1), 123–131 (2014).

Allibert, F.

C. Roda Neve, K. Ben Ali, C. Malaquin, F. Allibert, E. Desbonnets, I. Bertrand, W. Van Den Daele, and J. P. Raskin, “RF and linear performance of commercial 200 mm trap-rich HR-SOI wafers for SoC applications,” in Proceedings of IEEE Conference on Silicon Monolithic Integrated Circuits in RF Systems, (IEEE, 2013), pp. 15–17.

Al-Saadi, A.

Anderson, S.

M. Webster, P. Gothoskar, V. Patel, D. Piede, S. Anderson, R. Tummidi, D. Adams, C. Appel, P. Metz, S. Sunder, B. Dama, and K. Shastri, “An Efficient MOS-Capacitor based Silicon Modulator and CMOS Drivers for Optical Transmitters,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2014), pp. 1–2.
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Appel, C.

M. Webster, P. Gothoskar, V. Patel, D. Piede, S. Anderson, R. Tummidi, D. Adams, C. Appel, P. Metz, S. Sunder, B. Dama, and K. Shastri, “An Efficient MOS-Capacitor based Silicon Modulator and CMOS Drivers for Optical Transmitters,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2014), pp. 1–2.
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Armijo, G.

T. Pinguet, G. Armijo, J. Balardeta, S. Barabas, B. Chase, Y. Chi, A. Dahl, P. De Dobbelaere, Y. De Koninck, S. Denton, M. Eker, S. Fathpour, D. Foltz, F. Gholami, S. Gloeckner, K. Y. Hon, S. Hovey, S. Jackson, W. Li, Y. Liang, M. Mack, G. Masini, G. McGee, A. Mekis, S. Pang, M. Peterson, L. Planchon, K. Roberson, S. Sahni, J. Schramm, M. Sharp, C. Sohn, K. Stechschulte, P. Sun, G. Vastola, S. Wang, G. Wong, and K. Xu, Yokoyama, S. Yu., R. Zhou, “Advanced Silicon Photonic Transceivers,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2015), pp. 21–22.

Asghari, M.

Augendre, E.

Baehr-Jones, T.

Balardeta, J.

T. Pinguet, G. Armijo, J. Balardeta, S. Barabas, B. Chase, Y. Chi, A. Dahl, P. De Dobbelaere, Y. De Koninck, S. Denton, M. Eker, S. Fathpour, D. Foltz, F. Gholami, S. Gloeckner, K. Y. Hon, S. Hovey, S. Jackson, W. Li, Y. Liang, M. Mack, G. Masini, G. McGee, A. Mekis, S. Pang, M. Peterson, L. Planchon, K. Roberson, S. Sahni, J. Schramm, M. Sharp, C. Sohn, K. Stechschulte, P. Sun, G. Vastola, S. Wang, G. Wong, and K. Xu, Yokoyama, S. Yu., R. Zhou, “Advanced Silicon Photonic Transceivers,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2015), pp. 21–22.

Barabas, S.

T. Pinguet, G. Armijo, J. Balardeta, S. Barabas, B. Chase, Y. Chi, A. Dahl, P. De Dobbelaere, Y. De Koninck, S. Denton, M. Eker, S. Fathpour, D. Foltz, F. Gholami, S. Gloeckner, K. Y. Hon, S. Hovey, S. Jackson, W. Li, Y. Liang, M. Mack, G. Masini, G. McGee, A. Mekis, S. Pang, M. Peterson, L. Planchon, K. Roberson, S. Sahni, J. Schramm, M. Sharp, C. Sohn, K. Stechschulte, P. Sun, G. Vastola, S. Wang, G. Wong, and K. Xu, Yokoyama, S. Yu., R. Zhou, “Advanced Silicon Photonic Transceivers,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2015), pp. 21–22.

Baudot, C.

F. Boeuf, S. Cremer, E. Temporiti, M. Fere, M. Shaw, C. Baudot, N. Vulliet, T. Pinguet, A. Mekis, G. Masini, H. Petiton, P. Le Maitre, M. Traldi, and L. Maggi, “Silicon Photonics R&D and Manufacturing on 300-mm Wafer Platform,” J. Lightwave Technol. 34(2), 286–295 (2016).
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P. Le Maître, J. F. Carpentier, C. Baudot, N. Vulliet, A. Souhaité, J. B. Quélène, T. Ferrotti, and F. Bœuf, “Impact of process variability of active ring resonators in a 300mm silicon photonic platform,” in Proceedings of IEEE European Conference on Optical Communications, (IEEE, 2015), pp. 1–3.
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Ben Ali, K.

C. Roda Neve, K. Ben Ali, C. Malaquin, F. Allibert, E. Desbonnets, I. Bertrand, W. Van Den Daele, and J. P. Raskin, “RF and linear performance of commercial 200 mm trap-rich HR-SOI wafers for SoC applications,” in Proceedings of IEEE Conference on Silicon Monolithic Integrated Circuits in RF Systems, (IEEE, 2013), pp. 15–17.

Ben Bakir, B.

J. Durel, T. Ferrotti, A. Chantre, S. Crémer, J. Harduin, S. Bernabé, C. Kopp, F. Bœuf, B. Ben Bakir, and J. E. Broquin, “Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics,” Proc. SPIE 9750, 97500 (2016).

T. Ferrotti, H. Duprez, C. Jany, A. Chantre, C. Seassal, and B. Ben Bakir, “O-band III-V-on-Amorphous-Silicon Lasers Integrated With a Surface Grating Coupler,” IEEE Photonics Technol. Lett. 28(18), 1944–1947 (2016).
[Crossref]

C. Sciancalepore, R. J. Lycett, J. A. Dallery, S. Pauliac, K. Hassan, J. Harduin, H. Duprez, U. Weidenmueller, D. F. G. Gallagher, S. Menezo, and B. Ben Bakir, “Low-crosstalk fabrication-insensitive echelle grating demultiplexers,” IEEE Photonics Technol. Lett. 27(5), 494–497 (2015).
[Crossref]

H. Duprez, A. Descos, T. Ferrotti, C. Sciancalepore, C. Jany, K. Hassan, C. Seassal, S. Menezo, and B. Ben Bakir, “1310 nm hybrid InP/InGaAsP on Silicon Distributed Feedback Laser With High Side-Mode Suppression Ratio,” Opt. Express 23(7), 8489–8497 (2015).
[Crossref] [PubMed]

G. H. Duan, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, G. Nils, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, Y. G. Gardes, and G. T. Reed, “Hybrid III-V on Silicon Lasers for Photonic Integrated Circuits on Silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100213 (2014).

B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, E. Augendre, L. Fulbert, and J. M. Fedeli, “Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers,” Opt. Express 19(11), 10317–10325 (2011).
[Crossref] [PubMed]

Bennett, B.

R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron. 23(1), 123–129 (1987).
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Bergman, K.

Bergmen, K.

A. Novack, Y. Liu, R. Ding, M. Gould, T. Baehr-Jones, Q. Li, Y. Yang, Y. Ma, Y. Zhang, K. Padmaraju, K. Bergmen, A. E. J. Lim, G. Q. Lo, and M. Hochberg, “A 30 GHz silicon photonic platform,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2013), pp. 7–8.
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Bernabé, S.

J. Durel, T. Ferrotti, A. Chantre, S. Crémer, J. Harduin, S. Bernabé, C. Kopp, F. Bœuf, B. Ben Bakir, and J. E. Broquin, “Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics,” Proc. SPIE 9750, 97500 (2016).

Bertrand, I.

C. Roda Neve, K. Ben Ali, C. Malaquin, F. Allibert, E. Desbonnets, I. Bertrand, W. Van Den Daele, and J. P. Raskin, “RF and linear performance of commercial 200 mm trap-rich HR-SOI wafers for SoC applications,” in Proceedings of IEEE Conference on Silicon Monolithic Integrated Circuits in RF Systems, (IEEE, 2013), pp. 15–17.

Bijlani, B. J.

Bœuf, F.

J. Durel, T. Ferrotti, A. Chantre, S. Crémer, J. Harduin, S. Bernabé, C. Kopp, F. Bœuf, B. Ben Bakir, and J. E. Broquin, “Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics,” Proc. SPIE 9750, 97500 (2016).

Boeuf, F.

Bœuf, F.

L. Virot, L. Vivien, J. M. Fédéli, Y. Bogumilowicz, J. M. Hartmann, F. Bœuf, P. Crozat, D. Marris-Morini, and E. Cassan, “High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications,” Photonics Research 1(3), 140–147 (2013).
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P. Le Maître, J. F. Carpentier, C. Baudot, N. Vulliet, A. Souhaité, J. B. Quélène, T. Ferrotti, and F. Bœuf, “Impact of process variability of active ring resonators in a 300mm silicon photonic platform,” in Proceedings of IEEE European Conference on Optical Communications, (IEEE, 2015), pp. 1–3.
[Crossref]

Bogaerts, W.

Bogumilowicz, Y.

L. Virot, L. Vivien, J. M. Fédéli, Y. Bogumilowicz, J. M. Hartmann, F. Bœuf, P. Crozat, D. Marris-Morini, and E. Cassan, “High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications,” Photonics Research 1(3), 140–147 (2013).
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Bolk, J.

Bordel, D.

G. H. Duan, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, G. Nils, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, Y. G. Gardes, and G. T. Reed, “Hybrid III-V on Silicon Lasers for Photonic Integrated Circuits on Silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100213 (2014).

B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, E. Augendre, L. Fulbert, and J. M. Fedeli, “Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers,” Opt. Express 19(11), 10317–10325 (2011).
[Crossref] [PubMed]

Bouville, D.

Bowers, J. E.

Bronzi, D.

Broquin, J. E.

J. Durel, T. Ferrotti, A. Chantre, S. Crémer, J. Harduin, S. Bernabé, C. Kopp, F. Bœuf, B. Ben Bakir, and J. E. Broquin, “Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics,” Proc. SPIE 9750, 97500 (2016).

Cao, Y.

X. Luo, Y. Cao, J. Song, X. Hu, Y. Cheng, C. Li, C. Liu, T. Y. Liow, M. Yu, H. Wang, Q. J. Wang, and P. Guo-Qiang Lo, “High-throughput multiple dies-to-wafer bonding technology and III/V-on-Si hybrid lasers for heterogeneous integration of optoelectronic integrated circuits,” Frontiers in Materials 2(28), 1–21 (2015).

Carpentier, J. F.

P. Le Maître, J. F. Carpentier, C. Baudot, N. Vulliet, A. Souhaité, J. B. Quélène, T. Ferrotti, and F. Bœuf, “Impact of process variability of active ring resonators in a 300mm silicon photonic platform,” in Proceedings of IEEE European Conference on Optical Communications, (IEEE, 2015), pp. 1–3.
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Cassan, E.

L. Virot, L. Vivien, J. M. Fédéli, Y. Bogumilowicz, J. M. Hartmann, F. Bœuf, P. Crozat, D. Marris-Morini, and E. Cassan, “High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications,” Photonics Research 1(3), 140–147 (2013).
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G. Rasigade, M. Ziebell, D. Marris-Morini, J. M. Fédéli, F. Milesi, P. Grosse, D. Bouville, E. Cassan, and L. Vivien, “High extinction ratio 10 Gbit/s silicon optical modulator,” Opt. Express 19(7), 5827–5832 (2011).
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Chagnon, M.

Chantre, A.

J. Durel, T. Ferrotti, A. Chantre, S. Crémer, J. Harduin, S. Bernabé, C. Kopp, F. Bœuf, B. Ben Bakir, and J. E. Broquin, “Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics,” Proc. SPIE 9750, 97500 (2016).

T. Ferrotti, H. Duprez, C. Jany, A. Chantre, C. Seassal, and B. Ben Bakir, “O-band III-V-on-Amorphous-Silicon Lasers Integrated With a Surface Grating Coupler,” IEEE Photonics Technol. Lett. 28(18), 1944–1947 (2016).
[Crossref]

Chase, B.

T. Pinguet, G. Armijo, J. Balardeta, S. Barabas, B. Chase, Y. Chi, A. Dahl, P. De Dobbelaere, Y. De Koninck, S. Denton, M. Eker, S. Fathpour, D. Foltz, F. Gholami, S. Gloeckner, K. Y. Hon, S. Hovey, S. Jackson, W. Li, Y. Liang, M. Mack, G. Masini, G. McGee, A. Mekis, S. Pang, M. Peterson, L. Planchon, K. Roberson, S. Sahni, J. Schramm, M. Sharp, C. Sohn, K. Stechschulte, P. Sun, G. Vastola, S. Wang, G. Wong, and K. Xu, Yokoyama, S. Yu., R. Zhou, “Advanced Silicon Photonic Transceivers,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2015), pp. 21–22.

Chee, E. K. S.

Chen, S.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

Chen, W.

L. Yuan, L. Tao, H. Yu, W. Chen, D. Lu, Y. Li, G. Ran, and J. Pan, “Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method,” IEEE Photonics Technol. Lett. 25(12), 1180–1183 (2013).
[Crossref]

Chen, Y.-K.

Cheng, Y.

X. Luo, Y. Cao, J. Song, X. Hu, Y. Cheng, C. Li, C. Liu, T. Y. Liow, M. Yu, H. Wang, Q. J. Wang, and P. Guo-Qiang Lo, “High-throughput multiple dies-to-wafer bonding technology and III/V-on-Si hybrid lasers for heterogeneous integration of optoelectronic integrated circuits,” Frontiers in Materials 2(28), 1–21 (2015).

Chi, Y.

T. Pinguet, G. Armijo, J. Balardeta, S. Barabas, B. Chase, Y. Chi, A. Dahl, P. De Dobbelaere, Y. De Koninck, S. Denton, M. Eker, S. Fathpour, D. Foltz, F. Gholami, S. Gloeckner, K. Y. Hon, S. Hovey, S. Jackson, W. Li, Y. Liang, M. Mack, G. Masini, G. McGee, A. Mekis, S. Pang, M. Peterson, L. Planchon, K. Roberson, S. Sahni, J. Schramm, M. Sharp, C. Sohn, K. Stechschulte, P. Sun, G. Vastola, S. Wang, G. Wong, and K. Xu, Yokoyama, S. Yu., R. Zhou, “Advanced Silicon Photonic Transceivers,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2015), pp. 21–22.

Choo, S. J.

D. H. Lee, S. J. Choo, U. Jung, K. W. Lee, K. W. Kim, and J. H. Park, “Low-loss silicon waveguides with sidewall roughness reduction using a SiO2 hard mask and fluorine-based dry etching,” J. Micromech. Microeng. 25(1), 015003 (2015).
[Crossref]

Cohen, O.

Cole, C.

Corbett, B.

Cremer, S.

Crémer, S.

J. Durel, T. Ferrotti, A. Chantre, S. Crémer, J. Harduin, S. Bernabé, C. Kopp, F. Bœuf, B. Ben Bakir, and J. E. Broquin, “Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics,” Proc. SPIE 9750, 97500 (2016).

Crozat, P.

L. Virot, L. Vivien, J. M. Fédéli, Y. Bogumilowicz, J. M. Hartmann, F. Bœuf, P. Crozat, D. Marris-Morini, and E. Cassan, “High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications,” Photonics Research 1(3), 140–147 (2013).
[Crossref]

Cunningham, J. E.

Dahl, A.

T. Pinguet, G. Armijo, J. Balardeta, S. Barabas, B. Chase, Y. Chi, A. Dahl, P. De Dobbelaere, Y. De Koninck, S. Denton, M. Eker, S. Fathpour, D. Foltz, F. Gholami, S. Gloeckner, K. Y. Hon, S. Hovey, S. Jackson, W. Li, Y. Liang, M. Mack, G. Masini, G. McGee, A. Mekis, S. Pang, M. Peterson, L. Planchon, K. Roberson, S. Sahni, J. Schramm, M. Sharp, C. Sohn, K. Stechschulte, P. Sun, G. Vastola, S. Wang, G. Wong, and K. Xu, Yokoyama, S. Yu., R. Zhou, “Advanced Silicon Photonic Transceivers,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2015), pp. 21–22.

Dallery, J. A.

C. Sciancalepore, R. J. Lycett, J. A. Dallery, S. Pauliac, K. Hassan, J. Harduin, H. Duprez, U. Weidenmueller, D. F. G. Gallagher, S. Menezo, and B. Ben Bakir, “Low-crosstalk fabrication-insensitive echelle grating demultiplexers,” IEEE Photonics Technol. Lett. 27(5), 494–497 (2015).
[Crossref]

Dama, B.

M. Webster, P. Gothoskar, V. Patel, D. Piede, S. Anderson, R. Tummidi, D. Adams, C. Appel, P. Metz, S. Sunder, B. Dama, and K. Shastri, “An Efficient MOS-Capacitor based Silicon Modulator and CMOS Drivers for Optical Transmitters,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2014), pp. 1–2.
[Crossref]

De Coster, J.

M. Pantouvaki, P. Verheyen, J. De Coster, G. Lepage, P. Absil, and J. Van Campenhout, “56Gb/s Ring Modulator on a 300mm Silicon Photonics Platform,” in Proceedings of IEEE European Conference on Optical Communications, (IEEE, 2015), pp. 1–3.
[Crossref]

De Dobbelaere, P.

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A Grating-Coupler-Enabled CMOS Photonics Platform,” IEEE J. Sel. Top. Quantum Electron. 17(3), 597–608 (2011).
[Crossref]

T. Pinguet, G. Armijo, J. Balardeta, S. Barabas, B. Chase, Y. Chi, A. Dahl, P. De Dobbelaere, Y. De Koninck, S. Denton, M. Eker, S. Fathpour, D. Foltz, F. Gholami, S. Gloeckner, K. Y. Hon, S. Hovey, S. Jackson, W. Li, Y. Liang, M. Mack, G. Masini, G. McGee, A. Mekis, S. Pang, M. Peterson, L. Planchon, K. Roberson, S. Sahni, J. Schramm, M. Sharp, C. Sohn, K. Stechschulte, P. Sun, G. Vastola, S. Wang, G. Wong, and K. Xu, Yokoyama, S. Yu., R. Zhou, “Advanced Silicon Photonic Transceivers,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2015), pp. 21–22.

De Koninck, Y.

T. Pinguet, G. Armijo, J. Balardeta, S. Barabas, B. Chase, Y. Chi, A. Dahl, P. De Dobbelaere, Y. De Koninck, S. Denton, M. Eker, S. Fathpour, D. Foltz, F. Gholami, S. Gloeckner, K. Y. Hon, S. Hovey, S. Jackson, W. Li, Y. Liang, M. Mack, G. Masini, G. McGee, A. Mekis, S. Pang, M. Peterson, L. Planchon, K. Roberson, S. Sahni, J. Schramm, M. Sharp, C. Sohn, K. Stechschulte, P. Sun, G. Vastola, S. Wang, G. Wong, and K. Xu, Yokoyama, S. Yu., R. Zhou, “Advanced Silicon Photonic Transceivers,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2015), pp. 21–22.

de Valicourt, G.

G. H. Duan, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, G. Nils, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, Y. G. Gardes, and G. T. Reed, “Hybrid III-V on Silicon Lasers for Photonic Integrated Circuits on Silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100213 (2014).

De Vries, T.

Denoyer, G.

Denton, S.

T. Pinguet, G. Armijo, J. Balardeta, S. Barabas, B. Chase, Y. Chi, A. Dahl, P. De Dobbelaere, Y. De Koninck, S. Denton, M. Eker, S. Fathpour, D. Foltz, F. Gholami, S. Gloeckner, K. Y. Hon, S. Hovey, S. Jackson, W. Li, Y. Liang, M. Mack, G. Masini, G. McGee, A. Mekis, S. Pang, M. Peterson, L. Planchon, K. Roberson, S. Sahni, J. Schramm, M. Sharp, C. Sohn, K. Stechschulte, P. Sun, G. Vastola, S. Wang, G. Wong, and K. Xu, Yokoyama, S. Yu., R. Zhou, “Advanced Silicon Photonic Transceivers,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2015), pp. 21–22.

Desbonnets, E.

C. Roda Neve, K. Ben Ali, C. Malaquin, F. Allibert, E. Desbonnets, I. Bertrand, W. Van Den Daele, and J. P. Raskin, “RF and linear performance of commercial 200 mm trap-rich HR-SOI wafers for SoC applications,” in Proceedings of IEEE Conference on Silicon Monolithic Integrated Circuits in RF Systems, (IEEE, 2013), pp. 15–17.

Descos, A.

H. Duprez, A. Descos, T. Ferrotti, C. Sciancalepore, C. Jany, K. Hassan, C. Seassal, S. Menezo, and B. Ben Bakir, “1310 nm hybrid InP/InGaAsP on Silicon Distributed Feedback Laser With High Side-Mode Suppression Ratio,” Opt. Express 23(7), 8489–8497 (2015).
[Crossref] [PubMed]

G. H. Duan, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, G. Nils, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, Y. G. Gardes, and G. T. Reed, “Hybrid III-V on Silicon Lasers for Photonic Integrated Circuits on Silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100213 (2014).

B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, E. Augendre, L. Fulbert, and J. M. Fedeli, “Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers,” Opt. Express 19(11), 10317–10325 (2011).
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Duan, G.-H.

Dubray, O.

O. Dubray, A. Abraham, K. Hassan, S. Olivier, D. Marris-Morini, L. Vivien, I. O’Connor, and S. Menezo, “Electro-optical ring modulator: an ultra-compact model for the comparison and optimization of PN, PIN, and capacitive junction,” IEEE J. Sel. Top. Quantum Electron. 22(6), 1–10 (2016).
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Duprez, H.

T. Ferrotti, H. Duprez, C. Jany, A. Chantre, C. Seassal, and B. Ben Bakir, “O-band III-V-on-Amorphous-Silicon Lasers Integrated With a Surface Grating Coupler,” IEEE Photonics Technol. Lett. 28(18), 1944–1947 (2016).
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C. Sciancalepore, R. J. Lycett, J. A. Dallery, S. Pauliac, K. Hassan, J. Harduin, H. Duprez, U. Weidenmueller, D. F. G. Gallagher, S. Menezo, and B. Ben Bakir, “Low-crosstalk fabrication-insensitive echelle grating demultiplexers,” IEEE Photonics Technol. Lett. 27(5), 494–497 (2015).
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H. Duprez, A. Descos, T. Ferrotti, C. Sciancalepore, C. Jany, K. Hassan, C. Seassal, S. Menezo, and B. Ben Bakir, “1310 nm hybrid InP/InGaAsP on Silicon Distributed Feedback Laser With High Side-Mode Suppression Ratio,” Opt. Express 23(7), 8489–8497 (2015).
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J. Durel, T. Ferrotti, A. Chantre, S. Crémer, J. Harduin, S. Bernabé, C. Kopp, F. Bœuf, B. Ben Bakir, and J. E. Broquin, “Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics,” Proc. SPIE 9750, 97500 (2016).

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G. H. Duan, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, G. Nils, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, Y. G. Gardes, and G. T. Reed, “Hybrid III-V on Silicon Lasers for Photonic Integrated Circuits on Silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100213 (2014).

S. Keyvaninia, S. Verstuyft, L. Van Landschoot, F. Lelarge, G.-H. Duan, S. Messaoudene, J. M. Fedeli, T. De Vries, B. Smalbrugge, E. J. Geluk, J. Bolk, M. Smit, G. Morthier, D. Van Thourhout, and G. Roelkens, “Heterogeneously integrated III-V/silicon distributed feedback lasers,” Opt. Lett. 38(24), 5434–5437 (2013).
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T. Ferrotti, H. Duprez, C. Jany, A. Chantre, C. Seassal, and B. Ben Bakir, “O-band III-V-on-Amorphous-Silicon Lasers Integrated With a Surface Grating Coupler,” IEEE Photonics Technol. Lett. 28(18), 1944–1947 (2016).
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H. Duprez, A. Descos, T. Ferrotti, C. Sciancalepore, C. Jany, K. Hassan, C. Seassal, S. Menezo, and B. Ben Bakir, “1310 nm hybrid InP/InGaAsP on Silicon Distributed Feedback Laser With High Side-Mode Suppression Ratio,” Opt. Express 23(7), 8489–8497 (2015).
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Fong, J.

Fulbert, L.

Gallagher, D. F. G.

C. Sciancalepore, R. J. Lycett, J. A. Dallery, S. Pauliac, K. Hassan, J. Harduin, H. Duprez, U. Weidenmueller, D. F. G. Gallagher, S. Menezo, and B. Ben Bakir, “Low-crosstalk fabrication-insensitive echelle grating demultiplexers,” IEEE Photonics Technol. Lett. 27(5), 494–497 (2015).
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G. H. Duan, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, G. Nils, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, Y. G. Gardes, and G. T. Reed, “Hybrid III-V on Silicon Lasers for Photonic Integrated Circuits on Silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100213 (2014).

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T. Pinguet, G. Armijo, J. Balardeta, S. Barabas, B. Chase, Y. Chi, A. Dahl, P. De Dobbelaere, Y. De Koninck, S. Denton, M. Eker, S. Fathpour, D. Foltz, F. Gholami, S. Gloeckner, K. Y. Hon, S. Hovey, S. Jackson, W. Li, Y. Liang, M. Mack, G. Masini, G. McGee, A. Mekis, S. Pang, M. Peterson, L. Planchon, K. Roberson, S. Sahni, J. Schramm, M. Sharp, C. Sohn, K. Stechschulte, P. Sun, G. Vastola, S. Wang, G. Wong, and K. Xu, Yokoyama, S. Yu., R. Zhou, “Advanced Silicon Photonic Transceivers,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2015), pp. 21–22.

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Gloeckner, S.

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Gothoskar, P.

M. Webster, P. Gothoskar, V. Patel, D. Piede, S. Anderson, R. Tummidi, D. Adams, C. Appel, P. Metz, S. Sunder, B. Dama, and K. Shastri, “An Efficient MOS-Capacitor based Silicon Modulator and CMOS Drivers for Optical Transmitters,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2014), pp. 1–2.
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Guo-Qiang Lo, P.

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Hak, D.

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
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Harduin, J.

J. Durel, T. Ferrotti, A. Chantre, S. Crémer, J. Harduin, S. Bernabé, C. Kopp, F. Bœuf, B. Ben Bakir, and J. E. Broquin, “Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics,” Proc. SPIE 9750, 97500 (2016).

C. Sciancalepore, R. J. Lycett, J. A. Dallery, S. Pauliac, K. Hassan, J. Harduin, H. Duprez, U. Weidenmueller, D. F. G. Gallagher, S. Menezo, and B. Ben Bakir, “Low-crosstalk fabrication-insensitive echelle grating demultiplexers,” IEEE Photonics Technol. Lett. 27(5), 494–497 (2015).
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Hartmann, J. M.

L. Virot, L. Vivien, J. M. Fédéli, Y. Bogumilowicz, J. M. Hartmann, F. Bœuf, P. Crozat, D. Marris-Morini, and E. Cassan, “High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications,” Photonics Research 1(3), 140–147 (2013).
[Crossref]

Hassan, K.

O. Dubray, A. Abraham, K. Hassan, S. Olivier, D. Marris-Morini, L. Vivien, I. O’Connor, and S. Menezo, “Electro-optical ring modulator: an ultra-compact model for the comparison and optimization of PN, PIN, and capacitive junction,” IEEE J. Sel. Top. Quantum Electron. 22(6), 1–10 (2016).
[Crossref]

C. Sciancalepore, R. J. Lycett, J. A. Dallery, S. Pauliac, K. Hassan, J. Harduin, H. Duprez, U. Weidenmueller, D. F. G. Gallagher, S. Menezo, and B. Ben Bakir, “Low-crosstalk fabrication-insensitive echelle grating demultiplexers,” IEEE Photonics Technol. Lett. 27(5), 494–497 (2015).
[Crossref]

H. Duprez, A. Descos, T. Ferrotti, C. Sciancalepore, C. Jany, K. Hassan, C. Seassal, S. Menezo, and B. Ben Bakir, “1310 nm hybrid InP/InGaAsP on Silicon Distributed Feedback Laser With High Side-Mode Suppression Ratio,” Opt. Express 23(7), 8489–8497 (2015).
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Henniges, M.

Ho, S. T.

Hochberg, M.

Hon, K. Y.

T. Pinguet, G. Armijo, J. Balardeta, S. Barabas, B. Chase, Y. Chi, A. Dahl, P. De Dobbelaere, Y. De Koninck, S. Denton, M. Eker, S. Fathpour, D. Foltz, F. Gholami, S. Gloeckner, K. Y. Hon, S. Hovey, S. Jackson, W. Li, Y. Liang, M. Mack, G. Masini, G. McGee, A. Mekis, S. Pang, M. Peterson, L. Planchon, K. Roberson, S. Sahni, J. Schramm, M. Sharp, C. Sohn, K. Stechschulte, P. Sun, G. Vastola, S. Wang, G. Wong, and K. Xu, Yokoyama, S. Yu., R. Zhou, “Advanced Silicon Photonic Transceivers,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2015), pp. 21–22.

Hovey, S.

T. Pinguet, G. Armijo, J. Balardeta, S. Barabas, B. Chase, Y. Chi, A. Dahl, P. De Dobbelaere, Y. De Koninck, S. Denton, M. Eker, S. Fathpour, D. Foltz, F. Gholami, S. Gloeckner, K. Y. Hon, S. Hovey, S. Jackson, W. Li, Y. Liang, M. Mack, G. Masini, G. McGee, A. Mekis, S. Pang, M. Peterson, L. Planchon, K. Roberson, S. Sahni, J. Schramm, M. Sharp, C. Sohn, K. Stechschulte, P. Sun, G. Vastola, S. Wang, G. Wong, and K. Xu, Yokoyama, S. Yu., R. Zhou, “Advanced Silicon Photonic Transceivers,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2015), pp. 21–22.

Hu, T.-C.

Hu, X.

X. Luo, Y. Cao, J. Song, X. Hu, Y. Cheng, C. Li, C. Liu, T. Y. Liow, M. Yu, H. Wang, Q. J. Wang, and P. Guo-Qiang Lo, “High-throughput multiple dies-to-wafer bonding technology and III/V-on-Si hybrid lasers for heterogeneous integration of optoelectronic integrated circuits,” Frontiers in Materials 2(28), 1–21 (2015).

Jackson, S.

T. Pinguet, G. Armijo, J. Balardeta, S. Barabas, B. Chase, Y. Chi, A. Dahl, P. De Dobbelaere, Y. De Koninck, S. Denton, M. Eker, S. Fathpour, D. Foltz, F. Gholami, S. Gloeckner, K. Y. Hon, S. Hovey, S. Jackson, W. Li, Y. Liang, M. Mack, G. Masini, G. McGee, A. Mekis, S. Pang, M. Peterson, L. Planchon, K. Roberson, S. Sahni, J. Schramm, M. Sharp, C. Sohn, K. Stechschulte, P. Sun, G. Vastola, S. Wang, G. Wong, and K. Xu, Yokoyama, S. Yu., R. Zhou, “Advanced Silicon Photonic Transceivers,” in Proceedings of IEEE Conference on Group IV Photonics (IEEE, 2015), pp. 21–22.

Jany, C.

T. Ferrotti, H. Duprez, C. Jany, A. Chantre, C. Seassal, and B. Ben Bakir, “O-band III-V-on-Amorphous-Silicon Lasers Integrated With a Surface Grating Coupler,” IEEE Photonics Technol. Lett. 28(18), 1944–1947 (2016).
[Crossref]

H. Duprez, A. Descos, T. Ferrotti, C. Sciancalepore, C. Jany, K. Hassan, C. Seassal, S. Menezo, and B. Ben Bakir, “1310 nm hybrid InP/InGaAsP on Silicon Distributed Feedback Laser With High Side-Mode Suppression Ratio,” Opt. Express 23(7), 8489–8497 (2015).
[Crossref] [PubMed]

G. H. Duan, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, G. Nils, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, Y. G. Gardes, and G. T. Reed, “Hybrid III-V on Silicon Lasers for Photonic Integrated Circuits on Silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100213 (2014).

Jiang, Q.

S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, and H. Liu, “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics 10(5), 307–311 (2016).
[Crossref]

Jones, R.

A. W. Fang, B. R. Koch, R. Jones, E. Lively, D. Liang, Y.-H. Kuo, and J. E. Bowers, “A Distributed Bragg Reflector Silicon Evanescent Laser,” IEEE Photonics Technol. Lett. 20(20), 1667–1669 (2008).
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A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers, “Integrated AlGaInAs-silicon evanescent race track laser and photodetector,” Opt. Express 15(5), 2315–2322 (2007).
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A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
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H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[Crossref] [PubMed]

Jung, U.

D. H. Lee, S. J. Choo, U. Jung, K. W. Lee, K. W. Kim, and J. H. Park, “Low-loss silicon waveguides with sidewall roughness reduction using a SiO2 hard mask and fluorine-based dry etching,” J. Micromech. Microeng. 25(1), 015003 (2015).
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Kaspar, P.

G. H. Duan, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, G. Nils, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, Y. G. Gardes, and G. T. Reed, “Hybrid III-V on Silicon Lasers for Photonic Integrated Circuits on Silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100213 (2014).

Keyvaninia, S.

G. H. Duan, C. Jany, A. Le Liepvre, A. Accard, M. Lamponi, D. Make, P. Kaspar, G. Levaufre, G. Nils, F. Lelarge, J. M. Fedeli, A. Descos, B. Ben Bakir, S. Messaoudene, D. Bordel, S. Menezo, G. de Valicourt, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. J. Thomson, Y. G. Gardes, and G. T. Reed, “Hybrid III-V on Silicon Lasers for Photonic Integrated Circuits on Silicon,” IEEE J. Sel. Top. Quantum Electron. 20(4), 6100213 (2014).

S. Keyvaninia, S. Verstuyft, L. Van Landschoot, F. Lelarge, G.-H. Duan, S. Messaoudene, J. M. Fedeli, T. De Vries, B. Smalbrugge, E. J. Geluk, J. Bolk, M. Smit, G. Morthier, D. Van Thourhout, and G. Roelkens, “Heterogeneously integrated III-V/silicon distributed feedback lasers,” Opt. Lett. 38(24), 5434–5437 (2013).
[Crossref] [PubMed]

Kim, K. W.

D. H. Lee, S. J. Choo, U. Jung, K. W. Lee, K. W. Kim, and J. H. Park, “Low-loss silicon waveguides with sidewall roughness reduction using a SiO2 hard mask and fluorine-based dry etching,” J. Micromech. Microeng. 25(1), 015003 (2015).
[Crossref]

Koch, B. R.

A. W. Fang, B. R. Koch, R. Jones, E. Lively, D. Liang, Y.-H. Kuo, and J. E. Bowers, “A Distributed Bragg Reflector Silicon Evanescent Laser,” IEEE Photonics Technol. Lett. 20(20), 1667–1669 (2008).
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Kocot, C.

Kopf, R.

Kopp, C.

J. Durel, T. Ferrotti, A. Chantre, S. Crémer, J. Harduin, S. Bernabé, C. Kopp, F. Bœuf, B. Ben Bakir, and J. E. Broquin, “Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics,” Proc. SPIE 9750, 97500 (2016).

Krishnamoorthy, A. V.

Kuo, Y.-H.

A. W. Fang, B. R. Koch, R. Jones, E. Lively, D. Liang, Y.-H. Kuo, and J. E. Bowers, “A Distributed Bragg Reflector Silicon Evanescent Laser,” IEEE Photonics Technol. Lett. 20(20), 1667–1669 (2008).
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[Crossref]

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[Crossref]

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Figures (24)

Fig. 1
Fig. 1 Longitudinal (a), transversal (b) and top (c) schematic views of the laser.
Fig. 2
Fig. 2 (a) Schematic view of the light coupling between III-V and silicon waveguides. (b) Effective index of the fundamental TE modes of our III-V waveguide and a silicon slab waveguide (10µm-wide) versus its thickness, at 1310nm. Both waveguides are cladded with SiO2.
Fig. 3
Fig. 3 Electric field distribution of the fundamental TE even mode at the center (a), and end (b) of the gain region. (c) Longitudinal view showing the power transfer from the end of the III-V region to the Si waveguide. (d) Confinement factor in the MQW and Si waveguide across the whole III-V region.
Fig. 4
Fig. 4 Power confinement factor in the silicon waveguide at the end of the III -V region versus (a) input and output width of the mode transformer, (b) mode transformer length, and (c) SiO2 gap between III-V and silicon.
Fig. 5
Fig. 5 Longitudinal (a) and transversal (b) schematic views of the Bragg reflectors.
Fig. 6
Fig. 6 (a) Reflectivity spectrum for several etching depths. (b) Peak reflectivity versus grating length for several etching depths. The targeted Bragg wavelength is 1310nm.
Fig. 7
Fig. 7 (a) Top view of the transition. (b) Electric field distributions of the fundamental TE mode across the transition.
Fig. 8
Fig. 8 (a) Absolute net doping in the waveguide, simulated with a realistic doping profile. (b) Horizontal cut at Y = −0.1µm.
Fig. 9
Fig. 9 Phase shift at 2.5V versus doping related losses at 0V. Each point represents a different combination of acceptor and donor atoms concentrations.
Fig. 10
Fig. 10 Transversal view of the silicon MZM.
Fig. 11
Fig. 11 Top view of the silicon MZM under test.
Fig. 12
Fig. 12 Transmission spectra under different bias of the device from input fiber to output fiber, for (a) 2mm-long and (b) 4mm-long silicon MZM. (c) Phase shift versus applied voltage, simulations and measurements for both lengths.
Fig. 13
Fig. 13 Measured and simulated S11-parameters for (a) 2mm-long and (b) 4mm-long electrodes. Measured and simulated S21-parameters for (c) 2mm-long and (d) 4mm-long electrodes.
Fig. 14
Fig. 14 Measured and simulated (a) characteristic impedance, (b) RF losses, and (c) effective index of the electrodes.
Fig. 15
Fig. 15 Measured and simulated E/O bandwidth for (a) 2mm-long and (b) 4mm-long electrodes.
Fig. 16
Fig. 16 Set-up used during large-signal measurements of the silicon MZM.
Fig. 17
Fig. 17 25Gb/s eye diagrams of the (a) input electrical signal sent to the modulator before de-emphasis, (b) input electrical signal after de-emphasis. 25Gb/s eye diagrams of the (c) 2mm-long and (d) 4mm-long silicon MZM, both in dual drive configuration with 2.5Vpp applied on each arm.
Fig. 18
Fig. 18 Layout view of the complete transmitter integrating the hybrid III-V/silicon DBR laser and the silicon MZM (2mm-long).
Fig. 19
Fig. 19 Fabrication steps of the hybrid III-V/silicon transmitter. (a)-(e) Patterning of the silicon waveguides and MZM implantation steps. (f)-(g) III-V bonding and substrate removal. (h)-(m) III-V patterning and metallization. After step (g), the wafer is downsized from 8” to 3”.
Fig. 20
Fig. 20 (a) Top view of the 8” SOI wafer after III-V bonding. (b) Top view of the wafer after downsizing from 8” to 3”. (c) Top view of the hybrid III-V/silicon transmitter (with a 2mm-long silicon MZM), and Scanning Electron Microscope (SEM) images of the different components.
Fig. 21
Fig. 21 Laser voltage and optical power collected in fiber versus laser current for both (a) transmitter 1 and (b) transmitter 2. For these values of current, the lasers were in single-mode regime.
Fig. 22
Fig. 22 Spectrum measurements at the optical spectrum analyser of the hybrid III-V/silicon transmitter. (a) Spectrum for a fixed laser wavelength, with different phase between the MZM arms (transmitter 1). (b) Spectrum for a fixed MZM phase, with a tuned laser wavelength (transmitter 2). Ph is the electrical heating power used for both mirrors.
Fig. 23
Fig. 23 (a) Top view of the hybrid III-V/silicon transmitter (1) under test. (b) Set-up used during large-signal measurements of the hybrid III-V/silicon transmitters.
Fig. 24
Fig. 24 25Gb/s eye diagrams of the hybrid III-V/silicon transmitters using (a) 4mm-long MZM at 1303.5nm (transmitter 1) and (b) 2mm-long silicon MZM at 1315.8nm (transmitter 2), both in dual drive configuration with 2.5Vpp applied on each arm.

Tables (2)

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Table 1 Bragg Reflectors Characteristics

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Table 2 III-V Epitaxy Layer Structure

Equations (4)

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R=tan h 2 (κ L grating )
κ 2Δ n eff λ
λ g 2 n eff ¯ Λ
m( ω m )=| ( 1+j ω 0 C J Z Si ) V avg ( ω m ) ( 1+j ω m C J Z Si ) V avg ( ω 0 ) |

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