Abstract

In this study, high-performance InGaN-based green light-emitting diodes (LEDs) with a quaternary InAlGaN/GaN superlattice electron blocking layer (QSL-EBL) have been demonstrated. The band structural simulation was employed to investigate the electrostatic field and carriers distribution, show that the efficiency and droop behavior can be intensively improved by using a QSL-EBL in LEDs. The QSL-EBL structure can reduce the polarization-related electrostatic fields in the multiple quantum wells (MQWs), leading to a smoother band diagram and a more uniform carriers distribution among the quantum wells under forward bias. In comparison with green LEDs with conventional bulk-EBL structure, the light output power of LEDs with QSL-EBL was greatly enhanced by 53%. The efficiency droop shows only 30% at 100 A/cm2 comparing to its peak value, suggesting that the QSL-EBL LED is promising for future white lighting with high performance.

© 2016 Optical Society of America

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  18. Y. Y. Zhang and Y. A. Yin, “Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer,” Appl. Phys. Lett. 99(22), 221103 (2011).
    [Crossref]
  19. S. J. Lee, S. H. Han, C. Y. Cho, S. P. Lee, D. Y. Noh, H. W. Shim, Y. C. Kim, and S. J. Park, “Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition,” J. Phys. D Appl. Phys. 44(10), 105101 (2011).
    [Crossref]
  20. C. S. Xia, Z. M. Simon Li, Z. Q. Li, and Y. Sheng, “Effect of multiquantum barriers in performance enhancement of GaN-based light-emitting diodes,” Appl. Phys. Lett. 102(1), 013507 (2013).
    [Crossref]
  21. H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
    [Crossref]
  22. C. S. Chang, Y. K. Su, S. J. Chang, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier,” IEEE J. Quantum Electron. 34(1), 77–83 (1998).
    [Crossref]
  23. T. Takagi, F. Koyama, and K. Iga, “Design and photoluminescence study on a multiquantum barrier,” IEEE J. Quantum Electron. 27(6), 1511–1519 (1991).
    [Crossref]
  24. Y. Y. Zhang, X. L. Zhu, Y. A. Yin, and J. Ma, “Performance enhancement of near-UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking layer,” IEEE Electron Device Lett. 33(7), 994–996 (2012).
    [Crossref]
  25. J. Lee, P. G. Eliseev, M. Osinski, D. S. Lee, D. I. Florescu, and M. Pophristic, “InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1239–1245 (2003).
    [Crossref]
  26. S. M. Thahab, H. Abu Hassan, and Z. Hassan, “InAlGaN quaternary multi-quantum wells UV laser Diode performance and characterization,” World Acad. Sci. Eng. Technol. 55, 352–355 (2009).
  27. J. P. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Pulsed atomic layer epitaxy of quaternary AlInGaN layers,” Appl. Phys. Lett. 79(7), 925–927 (2001).
    [Crossref]
  28. C. T. Yu, W. C. Lai, C. H. Yen, and S. J. Chang, “InN/GaN alternative growth of thick InGaN wells on GaN-based light emitting diodes,” Opt. Mater. Express 3(11), 1952–1959 (2013).
    [Crossref]
  29. I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94(6), 3675–3696 (2003).
    [Crossref]

2014 (3)

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, Z. Ju, W. Liu, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering,” Opt. Lett. 39(8), 2483–2486 (2014).
[Crossref] [PubMed]

2013 (6)

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, and G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer,” Appl. Phys. Lett. 103(10), 102104 (2013).
[Crossref]

B. C. Lin, K. J. Chen, H. V. Han, Y. P. Lan, C. H. Chiu, C. C. Lin, M. H. Shih, P.-T. Lee, and H.-C. Kuo, “Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL,” IEEE Photonics Technol. Lett. 25(21), 2062–2065 (2013).
[Crossref]

Z. H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

C. S. Xia, Z. M. Simon Li, Z. Q. Li, and Y. Sheng, “Effect of multiquantum barriers in performance enhancement of GaN-based light-emitting diodes,” Appl. Phys. Lett. 102(1), 013507 (2013).
[Crossref]

C. T. Yu, W. C. Lai, C. H. Yen, and S. J. Chang, “InN/GaN alternative growth of thick InGaN wells on GaN-based light emitting diodes,” Opt. Mater. Express 3(11), 1952–1959 (2013).
[Crossref]

2012 (1)

Y. Y. Zhang, X. L. Zhu, Y. A. Yin, and J. Ma, “Performance enhancement of near-UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking layer,” IEEE Electron Device Lett. 33(7), 994–996 (2012).
[Crossref]

2011 (2)

Y. Y. Zhang and Y. A. Yin, “Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer,” Appl. Phys. Lett. 99(22), 221103 (2011).
[Crossref]

S. J. Lee, S. H. Han, C. Y. Cho, S. P. Lee, D. Y. Noh, H. W. Shim, Y. C. Kim, and S. J. Park, “Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition,” J. Phys. D Appl. Phys. 44(10), 105101 (2011).
[Crossref]

2010 (3)

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

2009 (4)

S. M. Thahab, H. Abu Hassan, and Z. Hassan, “InAlGaN quaternary multi-quantum wells UV laser Diode performance and characterization,” World Acad. Sci. Eng. Technol. 55, 352–355 (2009).

Y.-K. Kuo, J.-Y. Chang, M.-C. Tasi, and S.-H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]

Y.-K. Kuo, M.-C. Tasi, and S.-H. Yen, “Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer,” Opt. Commun. 282(21), 4252–4255 (2009).
[Crossref]

2008 (1)

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

2007 (1)

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

2003 (2)

J. Lee, P. G. Eliseev, M. Osinski, D. S. Lee, D. I. Florescu, and M. Pophristic, “InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1239–1245 (2003).
[Crossref]

I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94(6), 3675–3696 (2003).
[Crossref]

2002 (1)

S. Mutu, F. J. P. Schuurmans, and M. D. Pashley, “Red, green and blue LEDs for white light illumination,” IEEE J. Sel. Top. Quantum Electron. 8(2), 333–338 (2002).
[Crossref]

2001 (1)

J. P. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Pulsed atomic layer epitaxy of quaternary AlInGaN layers,” Appl. Phys. Lett. 79(7), 925–927 (2001).
[Crossref]

1998 (1)

C. S. Chang, Y. K. Su, S. J. Chang, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier,” IEEE J. Quantum Electron. 34(1), 77–83 (1998).
[Crossref]

1997 (1)

F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56(16), R10024 (1997).
[Crossref]

1991 (1)

T. Takagi, F. Koyama, and K. Iga, “Design and photoluminescence study on a multiquantum barrier,” IEEE J. Quantum Electron. 27(6), 1511–1519 (1991).
[Crossref]

Abu Hassan, H.

S. M. Thahab, H. Abu Hassan, and Z. Hassan, “InAlGaN quaternary multi-quantum wells UV laser Diode performance and characterization,” World Acad. Sci. Eng. Technol. 55, 352–355 (2009).

Bernardini, F.

F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56(16), R10024 (1997).
[Crossref]

Chang, C. S.

C. S. Chang, Y. K. Su, S. J. Chang, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier,” IEEE J. Quantum Electron. 34(1), 77–83 (1998).
[Crossref]

Chang, J.-Y.

Y.-K. Kuo, J.-Y. Chang, M.-C. Tasi, and S.-H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

Chang, P. T.

C. S. Chang, Y. K. Su, S. J. Chang, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier,” IEEE J. Quantum Electron. 34(1), 77–83 (1998).
[Crossref]

Chang, S. J.

C. T. Yu, W. C. Lai, C. H. Yen, and S. J. Chang, “InN/GaN alternative growth of thick InGaN wells on GaN-based light emitting diodes,” Opt. Mater. Express 3(11), 1952–1959 (2013).
[Crossref]

C. S. Chang, Y. K. Su, S. J. Chang, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier,” IEEE J. Quantum Electron. 34(1), 77–83 (1998).
[Crossref]

Chang, S. P.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Chang, W. T.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Chen, K. J.

B. C. Lin, K. J. Chen, H. V. Han, Y. P. Lan, C. H. Chiu, C. C. Lin, M. H. Shih, P.-T. Lee, and H.-C. Kuo, “Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL,” IEEE Photonics Technol. Lett. 25(21), 2062–2065 (2013).
[Crossref]

Chen, T. P.

C. S. Chang, Y. K. Su, S. J. Chang, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier,” IEEE J. Quantum Electron. 34(1), 77–83 (1998).
[Crossref]

Chiu, C. H.

B. C. Lin, K. J. Chen, H. V. Han, Y. P. Lan, C. H. Chiu, C. C. Lin, M. H. Shih, P.-T. Lee, and H.-C. Kuo, “Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL,” IEEE Photonics Technol. Lett. 25(21), 2062–2065 (2013).
[Crossref]

Cho, C. Y.

S. J. Lee, S. H. Han, C. Y. Cho, S. P. Lee, D. Y. Noh, H. W. Shim, Y. C. Kim, and S. J. Park, “Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition,” J. Phys. D Appl. Phys. 44(10), 105101 (2011).
[Crossref]

Cho, J.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

Choi, J. W.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

Demir, H. V.

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, Z. Ju, W. Liu, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering,” Opt. Lett. 39(8), 2483–2486 (2014).
[Crossref] [PubMed]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

DenBaars, S. P.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]

Dikme, Y.

Z. H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Eliseev, P. G.

J. Lee, P. G. Eliseev, M. Osinski, D. S. Lee, D. I. Florescu, and M. Pophristic, “InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1239–1245 (2003).
[Crossref]

Fareed, Q.

J. P. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Pulsed atomic layer epitaxy of quaternary AlInGaN layers,” Appl. Phys. Lett. 79(7), 925–927 (2001).
[Crossref]

Farrell, R. M.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

Fiorentini, V.

F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56(16), R10024 (1997).
[Crossref]

Florescu, D. I.

J. Lee, P. G. Eliseev, M. Osinski, D. S. Lee, D. I. Florescu, and M. Pophristic, “InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1239–1245 (2003).
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Fujito, K.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
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Gaska, R.

J. P. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Pulsed atomic layer epitaxy of quaternary AlInGaN layers,” Appl. Phys. Lett. 79(7), 925–927 (2001).
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George Craford, M.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
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Haeger, D. A.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

Han, H. V.

B. C. Lin, K. J. Chen, H. V. Han, Y. P. Lan, C. H. Chiu, C. C. Lin, M. H. Shih, P.-T. Lee, and H.-C. Kuo, “Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL,” IEEE Photonics Technol. Lett. 25(21), 2062–2065 (2013).
[Crossref]

Han, S. H.

S. J. Lee, S. H. Han, C. Y. Cho, S. P. Lee, D. Y. Noh, H. W. Shim, Y. C. Kim, and S. J. Park, “Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition,” J. Phys. D Appl. Phys. 44(10), 105101 (2011).
[Crossref]

Han, Y. D.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

Harbers, G.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
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Hasanov, N.

Hassan, Z.

S. M. Thahab, H. Abu Hassan, and Z. Hassan, “InAlGaN quaternary multi-quantum wells UV laser Diode performance and characterization,” World Acad. Sci. Eng. Technol. 55, 352–355 (2009).

Hirayama, H.

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

Hsu, P. S.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

Huang, K. H.

C. S. Chang, Y. K. Su, S. J. Chang, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier,” IEEE J. Quantum Electron. 34(1), 77–83 (1998).
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Hwang, S.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

Iga, K.

T. Takagi, F. Koyama, and K. Iga, “Design and photoluminescence study on a multiquantum barrier,” IEEE J. Quantum Electron. 27(6), 1511–1519 (1991).
[Crossref]

Iza, M.

K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]

Ji, Y.

Z. H. Zhang, Z. Ju, W. Liu, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering,” Opt. Lett. 39(8), 2483–2486 (2014).
[Crossref] [PubMed]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Ju, Z.

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, Z. Ju, W. Liu, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering,” Opt. Lett. 39(8), 2483–2486 (2014).
[Crossref] [PubMed]

Z. H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Kamata, N.

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

Kang, J.

J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, and G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer,” Appl. Phys. Lett. 103(10), 102104 (2013).
[Crossref]

Ke, C. C.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Keller, S.

K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]

Khan, M. A.

J. P. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Pulsed atomic layer epitaxy of quaternary AlInGaN layers,” Appl. Phys. Lett. 79(7), 925–927 (2001).
[Crossref]

Kim, D. Y.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

Kim, J. K.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Kim, M. H.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Kim, Y. C.

S. J. Lee, S. H. Han, C. Y. Cho, S. P. Lee, D. Y. Noh, H. W. Shim, Y. C. Kim, and S. J. Park, “Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition,” J. Phys. D Appl. Phys. 44(10), 105101 (2011).
[Crossref]

Koyama, F.

T. Takagi, F. Koyama, and K. Iga, “Design and photoluminescence study on a multiquantum barrier,” IEEE J. Quantum Electron. 27(6), 1511–1519 (1991).
[Crossref]

Krames, M. R.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

Kuo, H. C.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Kuo, H.-C.

B. C. Lin, K. J. Chen, H. V. Han, Y. P. Lan, C. H. Chiu, C. C. Lin, M. H. Shih, P.-T. Lee, and H.-C. Kuo, “Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL,” IEEE Photonics Technol. Lett. 25(21), 2062–2065 (2013).
[Crossref]

Kuo, Y.-K.

Y.-K. Kuo, J.-Y. Chang, M.-C. Tasi, and S.-H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
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Y.-K. Kuo, M.-C. Tasi, and S.-H. Yen, “Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer,” Opt. Commun. 282(21), 4252–4255 (2009).
[Crossref]

Kuokstis, E.

J. P. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Pulsed atomic layer epitaxy of quaternary AlInGaN layers,” Appl. Phys. Lett. 79(7), 925–927 (2001).
[Crossref]

Kyaw, Z.

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, Z. Ju, W. Liu, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering,” Opt. Lett. 39(8), 2483–2486 (2014).
[Crossref] [PubMed]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Lai, W. C.

Lan, Y. P.

B. C. Lin, K. J. Chen, H. V. Han, Y. P. Lan, C. H. Chiu, C. C. Lin, M. H. Shih, P.-T. Lee, and H.-C. Kuo, “Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL,” IEEE Photonics Technol. Lett. 25(21), 2062–2065 (2013).
[Crossref]

Lee, C. Y.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Lee, D. S.

J. Lee, P. G. Eliseev, M. Osinski, D. S. Lee, D. I. Florescu, and M. Pophristic, “InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1239–1245 (2003).
[Crossref]

Lee, J.

J. Lee, P. G. Eliseev, M. Osinski, D. S. Lee, D. I. Florescu, and M. Pophristic, “InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1239–1245 (2003).
[Crossref]

Lee, P.-T.

B. C. Lin, K. J. Chen, H. V. Han, Y. P. Lan, C. H. Chiu, C. C. Lin, M. H. Shih, P.-T. Lee, and H.-C. Kuo, “Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL,” IEEE Photonics Technol. Lett. 25(21), 2062–2065 (2013).
[Crossref]

Lee, S. J.

S. J. Lee, S. H. Han, C. Y. Cho, S. P. Lee, D. Y. Noh, H. W. Shim, Y. C. Kim, and S. J. Park, “Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition,” J. Phys. D Appl. Phys. 44(10), 105101 (2011).
[Crossref]

Lee, S. M.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Lee, S. P.

S. J. Lee, S. H. Han, C. Y. Cho, S. P. Lee, D. Y. Noh, H. W. Shim, Y. C. Kim, and S. J. Park, “Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition,” J. Phys. D Appl. Phys. 44(10), 105101 (2011).
[Crossref]

Li, H.

J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, and G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer,” Appl. Phys. Lett. 103(10), 102104 (2013).
[Crossref]

Li, J. C.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Li, Z.

J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, and G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer,” Appl. Phys. Lett. 103(10), 102104 (2013).
[Crossref]

Li, Z. Q.

C. S. Xia, Z. M. Simon Li, Z. Q. Li, and Y. Sheng, “Effect of multiquantum barriers in performance enhancement of GaN-based light-emitting diodes,” Appl. Phys. Lett. 102(1), 013507 (2013).
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Li, Z. Y.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Lin, B. C.

B. C. Lin, K. J. Chen, H. V. Han, Y. P. Lan, C. H. Chiu, C. C. Lin, M. H. Shih, P.-T. Lee, and H.-C. Kuo, “Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL,” IEEE Photonics Technol. Lett. 25(21), 2062–2065 (2013).
[Crossref]

Lin, C. C.

B. C. Lin, K. J. Chen, H. V. Han, Y. P. Lan, C. H. Chiu, C. C. Lin, M. H. Shih, P.-T. Lee, and H.-C. Kuo, “Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL,” IEEE Photonics Technol. Lett. 25(21), 2062–2065 (2013).
[Crossref]

Liu, W.

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, Z. Ju, W. Liu, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering,” Opt. Lett. 39(8), 2483–2486 (2014).
[Crossref] [PubMed]

Z. H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Liu, Z.

J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, and G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer,” Appl. Phys. Lett. 103(10), 102104 (2013).
[Crossref]

Lu, T. C.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Ma, J.

Y. Y. Zhang, X. L. Zhu, Y. A. Yin, and J. Ma, “Performance enhancement of near-UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking layer,” IEEE Electron Device Lett. 33(7), 994–996 (2012).
[Crossref]

Ma, P.

J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, and G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer,” Appl. Phys. Lett. 103(10), 102104 (2013).
[Crossref]

Maeda, T.

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

Meyaard, D.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

Meyer, J. R.

I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94(6), 3675–3696 (2003).
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Mueller, G. O.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

Mueller-Mach, R.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

Mutu, S.

S. Mutu, F. J. P. Schuurmans, and M. D. Pashley, “Red, green and blue LEDs for white light illumination,” IEEE J. Sel. Top. Quantum Electron. 8(2), 333–338 (2002).
[Crossref]

Nakamura, S.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]

Noh, D. Y.

S. J. Lee, S. H. Han, C. Y. Cho, S. P. Lee, D. Y. Noh, H. W. Shim, Y. C. Kim, and S. J. Park, “Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition,” J. Phys. D Appl. Phys. 44(10), 105101 (2011).
[Crossref]

Osinski, M.

J. Lee, P. G. Eliseev, M. Osinski, D. S. Lee, D. I. Florescu, and M. Pophristic, “InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1239–1245 (2003).
[Crossref]

Park, J. H.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

Park, S. J.

S. J. Lee, S. H. Han, C. Y. Cho, S. P. Lee, D. Y. Noh, H. W. Shim, Y. C. Kim, and S. J. Park, “Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition,” J. Phys. D Appl. Phys. 44(10), 105101 (2011).
[Crossref]

Park, Y.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Pashley, M. D.

S. Mutu, F. J. P. Schuurmans, and M. D. Pashley, “Red, green and blue LEDs for white light illumination,” IEEE J. Sel. Top. Quantum Electron. 8(2), 333–338 (2002).
[Crossref]

Pophristic, M.

J. Lee, P. G. Eliseev, M. Osinski, D. S. Lee, D. I. Florescu, and M. Pophristic, “InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1239–1245 (2003).
[Crossref]

Sakong, T.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Schubert, E. F.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Schubert, M. F.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Schuurmans, F. J. P.

S. Mutu, F. J. P. Schuurmans, and M. D. Pashley, “Red, green and blue LEDs for white light illumination,” IEEE J. Sel. Top. Quantum Electron. 8(2), 333–338 (2002).
[Crossref]

Shchekin, O. B.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

Sheng, Y.

C. S. Xia, Z. M. Simon Li, Z. Q. Li, and Y. Sheng, “Effect of multiquantum barriers in performance enhancement of GaN-based light-emitting diodes,” Appl. Phys. Lett. 102(1), 013507 (2013).
[Crossref]

Shih, M. H.

B. C. Lin, K. J. Chen, H. V. Han, Y. P. Lan, C. H. Chiu, C. C. Lin, M. H. Shih, P.-T. Lee, and H.-C. Kuo, “Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL,” IEEE Photonics Technol. Lett. 25(21), 2062–2065 (2013).
[Crossref]

Shim, H. W.

S. J. Lee, S. H. Han, C. Y. Cho, S. P. Lee, D. Y. Noh, H. W. Shim, Y. C. Kim, and S. J. Park, “Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition,” J. Phys. D Appl. Phys. 44(10), 105101 (2011).
[Crossref]

Shur, M. S.

J. P. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Pulsed atomic layer epitaxy of quaternary AlInGaN layers,” Appl. Phys. Lett. 79(7), 925–927 (2001).
[Crossref]

Simin, G.

J. P. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Pulsed atomic layer epitaxy of quaternary AlInGaN layers,” Appl. Phys. Lett. 79(7), 925–927 (2001).
[Crossref]

Simon Li, Z. M.

C. S. Xia, Z. M. Simon Li, Z. Q. Li, and Y. Sheng, “Effect of multiquantum barriers in performance enhancement of GaN-based light-emitting diodes,” Appl. Phys. Lett. 102(1), 013507 (2013).
[Crossref]

Sone, C.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Speck, J. S.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

Su, Y. K.

C. S. Chang, Y. K. Su, S. J. Chang, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier,” IEEE J. Quantum Electron. 34(1), 77–83 (1998).
[Crossref]

Sun, X. W.

Z. H. Zhang, Z. Ju, W. Liu, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering,” Opt. Lett. 39(8), 2483–2486 (2014).
[Crossref] [PubMed]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Takagi, T.

T. Takagi, F. Koyama, and K. Iga, “Design and photoluminescence study on a multiquantum barrier,” IEEE J. Quantum Electron. 27(6), 1511–1519 (1991).
[Crossref]

Tan, S. T.

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, Z. Ju, W. Liu, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering,” Opt. Lett. 39(8), 2483–2486 (2014).
[Crossref] [PubMed]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Tasi, M.-C.

Y.-K. Kuo, J.-Y. Chang, M.-C. Tasi, and S.-H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

Y.-K. Kuo, M.-C. Tasi, and S.-H. Yen, “Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer,” Opt. Commun. 282(21), 4252–4255 (2009).
[Crossref]

Thahab, S. M.

S. M. Thahab, H. Abu Hassan, and Z. Hassan, “InAlGaN quaternary multi-quantum wells UV laser Diode performance and characterization,” World Acad. Sci. Eng. Technol. 55, 352–355 (2009).

Tsukada, Y.

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

Vampola, K. J.

K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]

Vanderbilt, D.

F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56(16), R10024 (1997).
[Crossref]

Vurgaftman, I.

I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94(6), 3675–3696 (2003).
[Crossref]

Wang, C. H.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Wang, G.

J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, and G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer,” Appl. Phys. Lett. 103(10), 102104 (2013).
[Crossref]

Wang, H.

J. P. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Pulsed atomic layer epitaxy of quaternary AlInGaN layers,” Appl. Phys. Lett. 79(7), 925–927 (2001).
[Crossref]

Wang, L.

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Wang, S. C.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Wu, Y. R.

C. S. Chang, Y. K. Su, S. J. Chang, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier,” IEEE J. Quantum Electron. 34(1), 77–83 (1998).
[Crossref]

Xia, C. S.

C. S. Xia, Z. M. Simon Li, Z. Q. Li, and Y. Sheng, “Effect of multiquantum barriers in performance enhancement of GaN-based light-emitting diodes,” Appl. Phys. Lett. 102(1), 013507 (2013).
[Crossref]

Xu, J.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Yang, H. C.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Yang, J. W.

J. P. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Pulsed atomic layer epitaxy of quaternary AlInGaN layers,” Appl. Phys. Lett. 79(7), 925–927 (2001).
[Crossref]

Yen, C. H.

Yen, S.-H.

Y.-K. Kuo, J.-Y. Chang, M.-C. Tasi, and S.-H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

Y.-K. Kuo, M.-C. Tasi, and S.-H. Yen, “Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer,” Opt. Commun. 282(21), 4252–4255 (2009).
[Crossref]

Yi, X.

J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, and G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer,” Appl. Phys. Lett. 103(10), 102104 (2013).
[Crossref]

Yin, Y. A.

Y. Y. Zhang, X. L. Zhu, Y. A. Yin, and J. Ma, “Performance enhancement of near-UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking layer,” IEEE Electron Device Lett. 33(7), 994–996 (2012).
[Crossref]

Y. Y. Zhang and Y. A. Yin, “Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer,” Appl. Phys. Lett. 99(22), 221103 (2011).
[Crossref]

Yoon, S.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Yu, C. T.

Zhang, J. P.

J. P. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Pulsed atomic layer epitaxy of quaternary AlInGaN layers,” Appl. Phys. Lett. 79(7), 925–927 (2001).
[Crossref]

Zhang, X.

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, Z. Ju, W. Liu, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering,” Opt. Lett. 39(8), 2483–2486 (2014).
[Crossref] [PubMed]

Zhang, Y. Y.

Y. Y. Zhang, X. L. Zhu, Y. A. Yin, and J. Ma, “Performance enhancement of near-UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking layer,” IEEE Electron Device Lett. 33(7), 994–996 (2012).
[Crossref]

Y. Y. Zhang and Y. A. Yin, “Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer,” Appl. Phys. Lett. 99(22), 221103 (2011).
[Crossref]

Zhang, Z. H.

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, Z. Ju, W. Liu, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, X. W. Sun, and H. V. Demir, “Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering,” Opt. Lett. 39(8), 2483–2486 (2014).
[Crossref] [PubMed]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Zhou, L.

M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol. 3(2), 160–175 (2007).
[Crossref]

Zhu, X. L.

Y. Y. Zhang, X. L. Zhu, Y. A. Yin, and J. Ma, “Performance enhancement of near-UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking layer,” IEEE Electron Device Lett. 33(7), 994–996 (2012).
[Crossref]

Appl. Phys. Express (1)

H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer,” Appl. Phys. Express 3(3), 031002 (2010).
[Crossref]

Appl. Phys. Lett. (12)

Y. Y. Zhang and Y. A. Yin, “Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer,” Appl. Phys. Lett. 99(22), 221103 (2011).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, and G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer,” Appl. Phys. Lett. 103(10), 102104 (2013).
[Crossref]

K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Y.-K. Kuo, J.-Y. Chang, M.-C. Tasi, and S.-H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

J. P. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, “Pulsed atomic layer epitaxy of quaternary AlInGaN layers,” Appl. Phys. Lett. 79(7), 925–927 (2001).
[Crossref]

C. S. Xia, Z. M. Simon Li, Z. Q. Li, and Y. Sheng, “Effect of multiquantum barriers in performance enhancement of GaN-based light-emitting diodes,” Appl. Phys. Lett. 102(1), 013507 (2013).
[Crossref]

IEEE Electron Device Lett. (1)

Y. Y. Zhang, X. L. Zhu, Y. A. Yin, and J. Ma, “Performance enhancement of near-UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking layer,” IEEE Electron Device Lett. 33(7), 994–996 (2012).
[Crossref]

IEEE J. Quantum Electron. (2)

C. S. Chang, Y. K. Su, S. J. Chang, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier,” IEEE J. Quantum Electron. 34(1), 77–83 (1998).
[Crossref]

T. Takagi, F. Koyama, and K. Iga, “Design and photoluminescence study on a multiquantum barrier,” IEEE J. Quantum Electron. 27(6), 1511–1519 (1991).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (2)

S. Mutu, F. J. P. Schuurmans, and M. D. Pashley, “Red, green and blue LEDs for white light illumination,” IEEE J. Sel. Top. Quantum Electron. 8(2), 333–338 (2002).
[Crossref]

J. Lee, P. G. Eliseev, M. Osinski, D. S. Lee, D. I. Florescu, and M. Pophristic, “InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1239–1245 (2003).
[Crossref]

IEEE Photonics Technol. Lett. (1)

B. C. Lin, K. J. Chen, H. V. Han, Y. P. Lan, C. H. Chiu, C. C. Lin, M. H. Shih, P.-T. Lee, and H.-C. Kuo, “Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL,” IEEE Photonics Technol. Lett. 25(21), 2062–2065 (2013).
[Crossref]

J. Appl. Phys. (1)

I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94(6), 3675–3696 (2003).
[Crossref]

J. Disp. Technol. (2)

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Figures (6)

Fig. 1
Fig. 1 Schematic diagram of the LED structure for bulk-EBL LED, bulk-QEBL LED, and QSL-EBL LED, respectively. (b) Growth procedure schematic diagram of the quaternary In0.03Al0.2Ga0.77N/GaN superlattice EBL (QSL-EBL).
Fig. 2
Fig. 2 (a) STEM-HAADF image and (b) high resolution bright field image of QSL-EBL. The fast Fourier transform (FFT) image is shown in the inset, presents the zone axis of g = [1 1 ¯ 00]. (c) The intensity line profile of QSL-EBL, which was corresponded to the red line form Fig. 2(b). (d) The SIMS spectra of Ga, Al, In, and Mg atoms, which was performed form the QSL-EBL structure.
Fig. 3
Fig. 3 (a) The calculated electrostatic fields of the LEDs with proposed EBL designs at 100 A/cm2. (b) The zoom-in comparison of the electrostatic field at the last quantum well. (c) Energy band diagrams of the LEDs with proposed EBL designs at 100 A/cm2. The effective barrier heights are marked in the figures.
Fig. 4
Fig. 4 (a) Electron concentration distributions, (b) hole concentration distributions, and (c) radiative recombination rates within the active regions of green LEDs with proposed EBL designs at 100 mA/cm2.
Fig. 5
Fig. 5 (a) Electron reflecting probability and (b) electron current density for green LEDs with proposed EBL designs at 100 A/cm2, respectively.
Fig. 6
Fig. 6 Measured LOP and EQE curves as a function of the injection current density for LEDs. The experimental EQE and LOP data were plotted as symbols and well fitted to the simulations as lines.

Tables (1)

Tables Icon

Table 1 The precursor flow rate, V/III ratio, and pulse duration of digital growth procedure for QSL-EBL.

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