Abstract

We present a 10-Gb/s L-band reflective electro-absorption modulator integrated with a semiconductor optical amplifier (REAM-SOA) having improved transmission performance at very low input power of seed light. To decrease the input power of seed light, the absorption characteristics of the REAM are adjusted to reduce the amplified spontaneous emission light returned into the SOA, suppressing the gain saturation effect of the SOA. At a considerably low input power of −16 dBm, the REAM-SOA exhibits a low transmission penalty of about 1.2 dB after 50-km SMF transmission. Over a wide input power range from −16 dBm to 5 dBm, a penalty of less than 1.6 dB is achieved at 50-km transmission.

© 2015 Optical Society of America

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References

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  1. FSAN next generation PON task group, http://www.fsan.org/task-groups/ngpon/
  2. Y. Luo, X. Zhou, F. Effenberger, X. Yan, G. Peng, Y. Qian, and Y. Ma, “Time- and Wavelength-Division Multiplexed Passive Optical Network (TWDM-PON) for Next-Generation PON Stage 2 (NG-PON2),” J. Lightwave Technol. 31(4), 587–593 (2013).
    [Crossref]
  3. D. Smith, I. Lealman, X. Chen, D. Moodie, P. Cannard, J. Dosanjh, L. Rivers, C. Ford, R. Cronin, T. Kerr, L. Johnston, R. Waller, R. Firth, A. Borghesani, R. Wyatt, and A. Poustie, “Colourless 10Gb/s reflective SOA-EAM with low polarization sensitivity for long-reach DWDM-PON networks,” in European Conference and Exhibition on Optical Communication (ECOC), (2009), Paper 8.6.3.
  4. N. Dupuis, J. Decobert, C. Jany, F. Alexandre, A. Garreau, N. Lagay, F. Martin, D. Carpentier, J. Landreau, and C. Kazmierski, “10-Gb/s AlGaInAs colorless remote amplified modulator by selective area growth for wavelength agnostic networks,” IEEE Photon. Technol. Lett. 20(21), 1808–1810 (2008).
    [Crossref]
  5. H.-S. Kim, D. C. Kim, K.-S. Kim, B.-S. Choi, and O.-K. Kwon, “10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier for colorless WDM-PON,” Opt. Express 18(22), 23324–23330 (2010).
    [Crossref] [PubMed]
  6. D. C. Kim, H.-S. Kim, K. S. Kim, B.-S. Choi, J.-S. Jeong, and O.-K. Kwon, “10 Gbps SOA-REAM using monolithic integration of planar buried-heterostructure SOA with deep-ridge waveguide EA Modulator for colourless optical source in WDM-PON,” in European Conference and Exhibition on Optical Communication (ECOC), (2011), Paper Tu.5.LeSaleve.5.
    [Crossref]
  7. K. Ławniczuk, O. Patard, R. Guillamet, N. Chimot, A. Garreau, C. Kazmierski, G. Aubin, and K. Merghem, “40-Gb/s Colorless Reflective Amplified Modulator,” IEEE Photon. Technol. Lett. 25(4), 341–343 (2013).
    [Crossref]
  8. J. S. Jeong, H.-S. Kim, B.-S. Choi, D. C. Kim, K.-S. Kim, M. R. Park, and O.-K. Kwon, “Mitigation of Rayleigh crosstalk using noise suppression technique in 10-Gb/s REAM-SOA,” Opt. Express 20(24), 26373–26378 (2012).
    [Crossref] [PubMed]
  9. N. Cheng, J. Gao, C. Xu, B. Gao, X. Wu, D. Liu, L. Wang, X. Zhou, H. Lin, and F. Effenberger, “World’s first demonstration of pluggable optical transceiver modules for flexible TWDM PONs” in Proc. ECOC 2013, paper PD.4.F.4.
  10. C. P. Lai, R. Vaernewyck, A. Naughton, J. Bauwelinck, X. Yin, X.Z. Qiu, G. Maxwell, D. W. Smith, A. Borghesani, R. Cronin, K. Grobe, N. Parsons, E. Kehayas, P. D. Townsend, “Multi-Channel 11.3-Gb/s Integrated Reflective Transmitter for WDM-PON”, ECOC (2013), paper Tu.1.B.2.
    [Crossref]
  11. A. Borghesani, “Reflective based active semiconductor components for next generation optical access networks,” European Conference on Optical Communication (ECOC), (Torino, 2010), Paper Mo.1.B.1.
    [Crossref]
  12. A. Naughton, C. Antony, P. Ossieur, S. Porto, G. Talli, and P. D. Townsend, “Optimisation of SOA-REAMs for Hybrid DWDM-TDMA PON Applications,” Opt. Express 19(26), B722–B727 (2011).
    [Crossref] [PubMed]
  13. M. Itoh, Y. Shibata, T. Kakitsuka, Y. Kadota, and Y. Tohmori, “Polarization-insensitive SOA with a strained bulk active layer for network device application,” IEEE Photon. Technol. Lett. 14(6), 765–767 (2002).
    [Crossref]
  14. R. Weinmann, D. Baums, U. Cebulla, H. Haisch, D. Kaiser, E. Kuhn, E. Lach, K. Satzke, J. Weber, P. Wiedemann, and E. Zielinski, “Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology,” IEEE Photon. Technol. Lett. 8(7), 891–893 (1996).
    [Crossref]
  15. T. Watanabe, N. Sakaida, H. Yasaka, F. Kano, and M. Koga, “Transmission Performance of Chirp-Controlled Signal by Using Semiconductor Optical Amplifier,” J. Lightwave Technol. 18(8), 1069–1077 (2000).
    [Crossref]
  16. H. N. Tan, M. Matsuura, and N. Kishi, “Enhancement of input power dynamic range for multiwavelength amplification and optical signal processing in a semiconductor optical amplifier using holding beam effect,” J. Lightwave Technol. 28(17), 2593–2602 (2010).
    [Crossref]
  17. Q. T. Nguyen, L. Bramerie, P. Besnard, A. Shen, A. Garreau, C. Kazmierski, G. H. Duan, and J. C. Simon, “24 channels colorless WDM-PON with L-band 10Gb/s downstream and C-band 2.5Gb/s upstream using multiple-wavelength seeding sources based on mode-locked lasers,” in Conference on Optical Fiber Communications, Technical Digest (CD) (Optical Society of America, 2010), paper OThG6.
    [Crossref]

2013 (2)

K. Ławniczuk, O. Patard, R. Guillamet, N. Chimot, A. Garreau, C. Kazmierski, G. Aubin, and K. Merghem, “40-Gb/s Colorless Reflective Amplified Modulator,” IEEE Photon. Technol. Lett. 25(4), 341–343 (2013).
[Crossref]

Y. Luo, X. Zhou, F. Effenberger, X. Yan, G. Peng, Y. Qian, and Y. Ma, “Time- and Wavelength-Division Multiplexed Passive Optical Network (TWDM-PON) for Next-Generation PON Stage 2 (NG-PON2),” J. Lightwave Technol. 31(4), 587–593 (2013).
[Crossref]

2012 (1)

2011 (1)

2010 (2)

2008 (1)

N. Dupuis, J. Decobert, C. Jany, F. Alexandre, A. Garreau, N. Lagay, F. Martin, D. Carpentier, J. Landreau, and C. Kazmierski, “10-Gb/s AlGaInAs colorless remote amplified modulator by selective area growth for wavelength agnostic networks,” IEEE Photon. Technol. Lett. 20(21), 1808–1810 (2008).
[Crossref]

2002 (1)

M. Itoh, Y. Shibata, T. Kakitsuka, Y. Kadota, and Y. Tohmori, “Polarization-insensitive SOA with a strained bulk active layer for network device application,” IEEE Photon. Technol. Lett. 14(6), 765–767 (2002).
[Crossref]

2000 (1)

1996 (1)

R. Weinmann, D. Baums, U. Cebulla, H. Haisch, D. Kaiser, E. Kuhn, E. Lach, K. Satzke, J. Weber, P. Wiedemann, and E. Zielinski, “Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology,” IEEE Photon. Technol. Lett. 8(7), 891–893 (1996).
[Crossref]

Alexandre, F.

N. Dupuis, J. Decobert, C. Jany, F. Alexandre, A. Garreau, N. Lagay, F. Martin, D. Carpentier, J. Landreau, and C. Kazmierski, “10-Gb/s AlGaInAs colorless remote amplified modulator by selective area growth for wavelength agnostic networks,” IEEE Photon. Technol. Lett. 20(21), 1808–1810 (2008).
[Crossref]

Antony, C.

Aubin, G.

K. Ławniczuk, O. Patard, R. Guillamet, N. Chimot, A. Garreau, C. Kazmierski, G. Aubin, and K. Merghem, “40-Gb/s Colorless Reflective Amplified Modulator,” IEEE Photon. Technol. Lett. 25(4), 341–343 (2013).
[Crossref]

Baums, D.

R. Weinmann, D. Baums, U. Cebulla, H. Haisch, D. Kaiser, E. Kuhn, E. Lach, K. Satzke, J. Weber, P. Wiedemann, and E. Zielinski, “Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology,” IEEE Photon. Technol. Lett. 8(7), 891–893 (1996).
[Crossref]

Carpentier, D.

N. Dupuis, J. Decobert, C. Jany, F. Alexandre, A. Garreau, N. Lagay, F. Martin, D. Carpentier, J. Landreau, and C. Kazmierski, “10-Gb/s AlGaInAs colorless remote amplified modulator by selective area growth for wavelength agnostic networks,” IEEE Photon. Technol. Lett. 20(21), 1808–1810 (2008).
[Crossref]

Cebulla, U.

R. Weinmann, D. Baums, U. Cebulla, H. Haisch, D. Kaiser, E. Kuhn, E. Lach, K. Satzke, J. Weber, P. Wiedemann, and E. Zielinski, “Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology,” IEEE Photon. Technol. Lett. 8(7), 891–893 (1996).
[Crossref]

Chimot, N.

K. Ławniczuk, O. Patard, R. Guillamet, N. Chimot, A. Garreau, C. Kazmierski, G. Aubin, and K. Merghem, “40-Gb/s Colorless Reflective Amplified Modulator,” IEEE Photon. Technol. Lett. 25(4), 341–343 (2013).
[Crossref]

Choi, B.-S.

Decobert, J.

N. Dupuis, J. Decobert, C. Jany, F. Alexandre, A. Garreau, N. Lagay, F. Martin, D. Carpentier, J. Landreau, and C. Kazmierski, “10-Gb/s AlGaInAs colorless remote amplified modulator by selective area growth for wavelength agnostic networks,” IEEE Photon. Technol. Lett. 20(21), 1808–1810 (2008).
[Crossref]

Dupuis, N.

N. Dupuis, J. Decobert, C. Jany, F. Alexandre, A. Garreau, N. Lagay, F. Martin, D. Carpentier, J. Landreau, and C. Kazmierski, “10-Gb/s AlGaInAs colorless remote amplified modulator by selective area growth for wavelength agnostic networks,” IEEE Photon. Technol. Lett. 20(21), 1808–1810 (2008).
[Crossref]

Effenberger, F.

Garreau, A.

K. Ławniczuk, O. Patard, R. Guillamet, N. Chimot, A. Garreau, C. Kazmierski, G. Aubin, and K. Merghem, “40-Gb/s Colorless Reflective Amplified Modulator,” IEEE Photon. Technol. Lett. 25(4), 341–343 (2013).
[Crossref]

N. Dupuis, J. Decobert, C. Jany, F. Alexandre, A. Garreau, N. Lagay, F. Martin, D. Carpentier, J. Landreau, and C. Kazmierski, “10-Gb/s AlGaInAs colorless remote amplified modulator by selective area growth for wavelength agnostic networks,” IEEE Photon. Technol. Lett. 20(21), 1808–1810 (2008).
[Crossref]

Guillamet, R.

K. Ławniczuk, O. Patard, R. Guillamet, N. Chimot, A. Garreau, C. Kazmierski, G. Aubin, and K. Merghem, “40-Gb/s Colorless Reflective Amplified Modulator,” IEEE Photon. Technol. Lett. 25(4), 341–343 (2013).
[Crossref]

Haisch, H.

R. Weinmann, D. Baums, U. Cebulla, H. Haisch, D. Kaiser, E. Kuhn, E. Lach, K. Satzke, J. Weber, P. Wiedemann, and E. Zielinski, “Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology,” IEEE Photon. Technol. Lett. 8(7), 891–893 (1996).
[Crossref]

Itoh, M.

M. Itoh, Y. Shibata, T. Kakitsuka, Y. Kadota, and Y. Tohmori, “Polarization-insensitive SOA with a strained bulk active layer for network device application,” IEEE Photon. Technol. Lett. 14(6), 765–767 (2002).
[Crossref]

Jany, C.

N. Dupuis, J. Decobert, C. Jany, F. Alexandre, A. Garreau, N. Lagay, F. Martin, D. Carpentier, J. Landreau, and C. Kazmierski, “10-Gb/s AlGaInAs colorless remote amplified modulator by selective area growth for wavelength agnostic networks,” IEEE Photon. Technol. Lett. 20(21), 1808–1810 (2008).
[Crossref]

Jeong, J. S.

Kadota, Y.

M. Itoh, Y. Shibata, T. Kakitsuka, Y. Kadota, and Y. Tohmori, “Polarization-insensitive SOA with a strained bulk active layer for network device application,” IEEE Photon. Technol. Lett. 14(6), 765–767 (2002).
[Crossref]

Kaiser, D.

R. Weinmann, D. Baums, U. Cebulla, H. Haisch, D. Kaiser, E. Kuhn, E. Lach, K. Satzke, J. Weber, P. Wiedemann, and E. Zielinski, “Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology,” IEEE Photon. Technol. Lett. 8(7), 891–893 (1996).
[Crossref]

Kakitsuka, T.

M. Itoh, Y. Shibata, T. Kakitsuka, Y. Kadota, and Y. Tohmori, “Polarization-insensitive SOA with a strained bulk active layer for network device application,” IEEE Photon. Technol. Lett. 14(6), 765–767 (2002).
[Crossref]

Kano, F.

Kazmierski, C.

K. Ławniczuk, O. Patard, R. Guillamet, N. Chimot, A. Garreau, C. Kazmierski, G. Aubin, and K. Merghem, “40-Gb/s Colorless Reflective Amplified Modulator,” IEEE Photon. Technol. Lett. 25(4), 341–343 (2013).
[Crossref]

N. Dupuis, J. Decobert, C. Jany, F. Alexandre, A. Garreau, N. Lagay, F. Martin, D. Carpentier, J. Landreau, and C. Kazmierski, “10-Gb/s AlGaInAs colorless remote amplified modulator by selective area growth for wavelength agnostic networks,” IEEE Photon. Technol. Lett. 20(21), 1808–1810 (2008).
[Crossref]

Kim, D. C.

Kim, H.-S.

Kim, K.-S.

Kishi, N.

Koga, M.

Kuhn, E.

R. Weinmann, D. Baums, U. Cebulla, H. Haisch, D. Kaiser, E. Kuhn, E. Lach, K. Satzke, J. Weber, P. Wiedemann, and E. Zielinski, “Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology,” IEEE Photon. Technol. Lett. 8(7), 891–893 (1996).
[Crossref]

Kwon, O.-K.

Lach, E.

R. Weinmann, D. Baums, U. Cebulla, H. Haisch, D. Kaiser, E. Kuhn, E. Lach, K. Satzke, J. Weber, P. Wiedemann, and E. Zielinski, “Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology,” IEEE Photon. Technol. Lett. 8(7), 891–893 (1996).
[Crossref]

Lagay, N.

N. Dupuis, J. Decobert, C. Jany, F. Alexandre, A. Garreau, N. Lagay, F. Martin, D. Carpentier, J. Landreau, and C. Kazmierski, “10-Gb/s AlGaInAs colorless remote amplified modulator by selective area growth for wavelength agnostic networks,” IEEE Photon. Technol. Lett. 20(21), 1808–1810 (2008).
[Crossref]

Landreau, J.

N. Dupuis, J. Decobert, C. Jany, F. Alexandre, A. Garreau, N. Lagay, F. Martin, D. Carpentier, J. Landreau, and C. Kazmierski, “10-Gb/s AlGaInAs colorless remote amplified modulator by selective area growth for wavelength agnostic networks,” IEEE Photon. Technol. Lett. 20(21), 1808–1810 (2008).
[Crossref]

Lawniczuk, K.

K. Ławniczuk, O. Patard, R. Guillamet, N. Chimot, A. Garreau, C. Kazmierski, G. Aubin, and K. Merghem, “40-Gb/s Colorless Reflective Amplified Modulator,” IEEE Photon. Technol. Lett. 25(4), 341–343 (2013).
[Crossref]

Luo, Y.

Ma, Y.

Martin, F.

N. Dupuis, J. Decobert, C. Jany, F. Alexandre, A. Garreau, N. Lagay, F. Martin, D. Carpentier, J. Landreau, and C. Kazmierski, “10-Gb/s AlGaInAs colorless remote amplified modulator by selective area growth for wavelength agnostic networks,” IEEE Photon. Technol. Lett. 20(21), 1808–1810 (2008).
[Crossref]

Matsuura, M.

Merghem, K.

K. Ławniczuk, O. Patard, R. Guillamet, N. Chimot, A. Garreau, C. Kazmierski, G. Aubin, and K. Merghem, “40-Gb/s Colorless Reflective Amplified Modulator,” IEEE Photon. Technol. Lett. 25(4), 341–343 (2013).
[Crossref]

Naughton, A.

Ossieur, P.

Park, M. R.

Patard, O.

K. Ławniczuk, O. Patard, R. Guillamet, N. Chimot, A. Garreau, C. Kazmierski, G. Aubin, and K. Merghem, “40-Gb/s Colorless Reflective Amplified Modulator,” IEEE Photon. Technol. Lett. 25(4), 341–343 (2013).
[Crossref]

Peng, G.

Porto, S.

Qian, Y.

Sakaida, N.

Satzke, K.

R. Weinmann, D. Baums, U. Cebulla, H. Haisch, D. Kaiser, E. Kuhn, E. Lach, K. Satzke, J. Weber, P. Wiedemann, and E. Zielinski, “Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology,” IEEE Photon. Technol. Lett. 8(7), 891–893 (1996).
[Crossref]

Shibata, Y.

M. Itoh, Y. Shibata, T. Kakitsuka, Y. Kadota, and Y. Tohmori, “Polarization-insensitive SOA with a strained bulk active layer for network device application,” IEEE Photon. Technol. Lett. 14(6), 765–767 (2002).
[Crossref]

Talli, G.

Tan, H. N.

Tohmori, Y.

M. Itoh, Y. Shibata, T. Kakitsuka, Y. Kadota, and Y. Tohmori, “Polarization-insensitive SOA with a strained bulk active layer for network device application,” IEEE Photon. Technol. Lett. 14(6), 765–767 (2002).
[Crossref]

Townsend, P. D.

Watanabe, T.

Weber, J.

R. Weinmann, D. Baums, U. Cebulla, H. Haisch, D. Kaiser, E. Kuhn, E. Lach, K. Satzke, J. Weber, P. Wiedemann, and E. Zielinski, “Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology,” IEEE Photon. Technol. Lett. 8(7), 891–893 (1996).
[Crossref]

Weinmann, R.

R. Weinmann, D. Baums, U. Cebulla, H. Haisch, D. Kaiser, E. Kuhn, E. Lach, K. Satzke, J. Weber, P. Wiedemann, and E. Zielinski, “Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology,” IEEE Photon. Technol. Lett. 8(7), 891–893 (1996).
[Crossref]

Wiedemann, P.

R. Weinmann, D. Baums, U. Cebulla, H. Haisch, D. Kaiser, E. Kuhn, E. Lach, K. Satzke, J. Weber, P. Wiedemann, and E. Zielinski, “Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology,” IEEE Photon. Technol. Lett. 8(7), 891–893 (1996).
[Crossref]

Yan, X.

Yasaka, H.

Zhou, X.

Zielinski, E.

R. Weinmann, D. Baums, U. Cebulla, H. Haisch, D. Kaiser, E. Kuhn, E. Lach, K. Satzke, J. Weber, P. Wiedemann, and E. Zielinski, “Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology,” IEEE Photon. Technol. Lett. 8(7), 891–893 (1996).
[Crossref]

IEEE Photon. Technol. Lett. (4)

N. Dupuis, J. Decobert, C. Jany, F. Alexandre, A. Garreau, N. Lagay, F. Martin, D. Carpentier, J. Landreau, and C. Kazmierski, “10-Gb/s AlGaInAs colorless remote amplified modulator by selective area growth for wavelength agnostic networks,” IEEE Photon. Technol. Lett. 20(21), 1808–1810 (2008).
[Crossref]

M. Itoh, Y. Shibata, T. Kakitsuka, Y. Kadota, and Y. Tohmori, “Polarization-insensitive SOA with a strained bulk active layer for network device application,” IEEE Photon. Technol. Lett. 14(6), 765–767 (2002).
[Crossref]

R. Weinmann, D. Baums, U. Cebulla, H. Haisch, D. Kaiser, E. Kuhn, E. Lach, K. Satzke, J. Weber, P. Wiedemann, and E. Zielinski, “Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology,” IEEE Photon. Technol. Lett. 8(7), 891–893 (1996).
[Crossref]

K. Ławniczuk, O. Patard, R. Guillamet, N. Chimot, A. Garreau, C. Kazmierski, G. Aubin, and K. Merghem, “40-Gb/s Colorless Reflective Amplified Modulator,” IEEE Photon. Technol. Lett. 25(4), 341–343 (2013).
[Crossref]

J. Lightwave Technol. (3)

Opt. Express (3)

Other (7)

Q. T. Nguyen, L. Bramerie, P. Besnard, A. Shen, A. Garreau, C. Kazmierski, G. H. Duan, and J. C. Simon, “24 channels colorless WDM-PON with L-band 10Gb/s downstream and C-band 2.5Gb/s upstream using multiple-wavelength seeding sources based on mode-locked lasers,” in Conference on Optical Fiber Communications, Technical Digest (CD) (Optical Society of America, 2010), paper OThG6.
[Crossref]

D. C. Kim, H.-S. Kim, K. S. Kim, B.-S. Choi, J.-S. Jeong, and O.-K. Kwon, “10 Gbps SOA-REAM using monolithic integration of planar buried-heterostructure SOA with deep-ridge waveguide EA Modulator for colourless optical source in WDM-PON,” in European Conference and Exhibition on Optical Communication (ECOC), (2011), Paper Tu.5.LeSaleve.5.
[Crossref]

FSAN next generation PON task group, http://www.fsan.org/task-groups/ngpon/

D. Smith, I. Lealman, X. Chen, D. Moodie, P. Cannard, J. Dosanjh, L. Rivers, C. Ford, R. Cronin, T. Kerr, L. Johnston, R. Waller, R. Firth, A. Borghesani, R. Wyatt, and A. Poustie, “Colourless 10Gb/s reflective SOA-EAM with low polarization sensitivity for long-reach DWDM-PON networks,” in European Conference and Exhibition on Optical Communication (ECOC), (2009), Paper 8.6.3.

N. Cheng, J. Gao, C. Xu, B. Gao, X. Wu, D. Liu, L. Wang, X. Zhou, H. Lin, and F. Effenberger, “World’s first demonstration of pluggable optical transceiver modules for flexible TWDM PONs” in Proc. ECOC 2013, paper PD.4.F.4.

C. P. Lai, R. Vaernewyck, A. Naughton, J. Bauwelinck, X. Yin, X.Z. Qiu, G. Maxwell, D. W. Smith, A. Borghesani, R. Cronin, K. Grobe, N. Parsons, E. Kehayas, P. D. Townsend, “Multi-Channel 11.3-Gb/s Integrated Reflective Transmitter for WDM-PON”, ECOC (2013), paper Tu.1.B.2.
[Crossref]

A. Borghesani, “Reflective based active semiconductor components for next generation optical access networks,” European Conference on Optical Communication (ECOC), (Torino, 2010), Paper Mo.1.B.1.
[Crossref]

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Figures (9)

Fig. 1
Fig. 1 TWDM-PON system diagram using the reflective-type transmitters.
Fig. 2
Fig. 2 REAM-SOA (a) schematic view and (b) chip photograph.
Fig. 3
Fig. 3 (a) ASE spectra at the front facet and rear facet of REAM-SOA and (b) fiber-to-fiber gain spectra for different bias voltages of EAM.
Fig. 4
Fig. 4 Experiment setup to measure the transmission performance of 10-Gb/s REAM-SOA.
Fig. 5
Fig. 5 (a) BtB BER curves for various input power values and (b) BtB receiver sensitivity versus input power.
Fig. 6
Fig. 6 10 Gb/s eye diagrams for various input power.
Fig. 7
Fig. 7 BER curves for several transmission distances for an input power of –16 dBm.
Fig. 8
Fig. 8 Transmission penalty for several transmission distances.
Fig. 9
Fig. 9 BER curves up to 100-km transmission at (a) input power of −10 dBm and (b) input power of 5 dBm.

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