Abstract

A larger ratio of conduction-band offset to valence-band offset is the unique character for MgxZn1-xO alloys. For this reason, it is feasible to build a quasi-electric forces, caused by the spatial gradient of the conduction edge, exerting on the electrons. In this paper, a novel graded band gap cubic-MgZnO-based solar-blind photodetector is successfully fabricated from Graded-Band-Gap-Cubic-MgZnO/i-MgO/p-Si heterojunction, via changing stoichiometry spatial gradient. Due to quasi-electric fields in non-uniform MgZnO, the multiple carriers are generated under ultra-low threshold bias voltage. The photodetector showed high performance, namely, high responsivity, quantum efficiency, high sensitivity and selectivity towards the solar-blind spectrum, and fast response times.

© 2015 Optical Society of America

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    [Crossref]
  2. M. W. Williams and E. T. Arakawa, “Optical properties of single-crystal magnesium oxide,” J. Appl. Phys. 38(13), 5272 (1967).
    [Crossref]
  3. X. L. Du, Z. X. Mei, Z. L. Liu, Y. Guo, T. C. Zhang, Y. N. Hou, Z. Zhang, Q. K. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
    [Crossref]
  4. W. I. Park, G. C. Yi, M. Kim, and S. J. Pennycook, “Quantum confinement observed in ZnO/ZnMgO nanorod heterostructures,” Adv. Mater. 15(6), 526–529 (2003).
    [Crossref]
  5. R. Chen, B. Ling, X. W. Sun, and H. D. Sun, “Room temperature excitonic whispering gallery mode lasing from high-quality hexagonal ZnO microdisks,” Adv. Mater. 23(19), 2199–2204 (2011).
    [Crossref] [PubMed]
  6. H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
    [Crossref]
  7. H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. Hou, and K. L. Choy, “Low-threshold electrically pumped random lasers,” Adv. Mater. 22(16), 1877–1881 (2010).
    [Crossref] [PubMed]
  8. J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, K. W. Liu, and D. Z. Shen, “MgZnO p-n heterostructure light-emitting devices,” Opt. Lett. 38(12), 2113–2115 (2013).
    [Crossref] [PubMed]
  9. Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
    [Crossref] [PubMed]
  10. Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
    [Crossref]
  11. L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
    [Crossref]
  12. X. Xie, Z. Zhang, B. Li, S. Wang, M. Jiang, C. Shan, D. Zhao, H. Chen, and D. Shen, “Enhanced solar-blind responsivity of photodetectors based on cubic MgZnO films via gallium doping,” Opt. Express 22(1), 246–253 (2014).
    [Crossref] [PubMed]
  13. Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
    [Crossref]
  14. H. L. Liang, Z. X. Mei, Q. H. Zhang, L. Gu, S. Liang, Y. N. Hou, D. Q. Ye, C. Z. Gu, R. C. Yu, and X. L. Du, “Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 98(22), 221902 (2011).
    [Crossref]
  15. G. Konstantatos and E. H. Sargent, “Nanostructured materials for photon detection,” Nat. Nanotechnol. 5(6), 391–400 (2010).
    [Crossref] [PubMed]
  16. H. Kroemer, “Quasi-electric and quasi-magnetic fields in nonuniform semiconductors,” RCA Rev. 18, 332 (1957).
  17. B. Laumer, F. Schuster, T. A. Wassner, M. Stutzmann, M. Rohnke, J. Schormann, and M. Eickhoff, “ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers,” J. Appl. Phys. 111(11), 113504 (2012).
    [Crossref]
  18. X. Zhuang, C. Z. Ning, and A. Pan, “Composition and bandgap-graded semiconductor alloy nanowires,” Adv. Mater. 24(1), 13–33 (2012).
    [Crossref] [PubMed]
  19. L. Li, H. Lu, Z. Yang, L. Tong, Y. Bando, and D. Golberg, “Bandgap-graded CdSxSe1-x nanowires for high-performance field-effect transistors and solar cells,” Adv. Mater. 25(8), 1109–1113 (2013).
    [Crossref] [PubMed]
  20. Y. Lu, F. Gu, C. Meng, H. Yu, Y. Ma, W. Fang, and L. Tong, “Multicolour laser from a single bandgap-graded CdSSe alloy nanoribbon,” Opt. Express 21(19), 22314–22319 (2013).
    [Crossref] [PubMed]
  21. Y. Y. Lai, Y. P. Lan, and T. C. Lu, “Strong light-matter interaction in ZnO microcavities,” Light Sci. Appl. 2(6), e76 (2013).
    [Crossref]
  22. A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980 (1999).
    [Crossref]
  23. Y. F. Li, B. Yao, Y. M. Lu, B. H. Li, Y. Q. Gai, C. X. Cong, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, D. Z. Shen, and X. W. Fan, “Valence-band offset of epitaxial ZnO/MgO (111) heterojunction determined by x-ray photoelectron spectroscopy,” Appl. Phys. Lett. 92(19), 192116 (2008).
    [Crossref]
  24. C. G. Van de Walle and J. Neugebauer, “Universal alignment of hydrogen levels in semiconductors, insulators and solutions,” Nature 423(6940), 626–628 (2003).
    [Crossref] [PubMed]
  25. Y. Z. Zhu, G. D. Chen, H. G. Ye, A. Walsh, C. Y. Moon, and S. H. Wei, “Electronic structure and phase stability of MgO, ZnO, CdO, and related ternary alloys,” Phys. Rev. B 77(24), 245209 (2008).
    [Crossref]
  26. P. D. C. King, T. D. Veal, A. Schleife, J. Zuniga-Perez, B. Martel, P. H. Jefferson, F. Fuchs, V. Munoz-Sanjose, F. Bechstedt, and C. F. McConville, “Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations,” Phys. Rev. B 79(20), 205205 (2009).
    [Crossref]
  27. R. Dahal, T. M. Al Tahtamouni, J. Y. Lin, and H. X. Jiang, “AlN avalanche photodetectors,” Appl. Phys. Lett. 91(24), 243503 (2007).
    [Crossref]
  28. X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
    [Crossref]
  29. D. G. Baik and S. M. Cho, “Application of sol-gel derived films for ZnO/n-Si junction solar cells,” Thin Solid Films 354(1), 227–231 (1999).
    [Crossref]
  30. J. Yamashita, “Oxygen band in magnesium oxide,” Phys. Rev. 111(3), 733–735 (1958).
    [Crossref]
  31. J. Liang, H. Z. Wu, Y. F. Lao, N. B. Chen, P. Yu, and T. N. Xu, “Characterization of cubic phase MgZnO/Si(100) interfaces,” Appl. Surf. Sci. 252(4), 1147–1152 (2005).
    [Crossref]
  32. T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu, and X. L. Du, “Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si,” Appl. Phys. Lett. 94(11), 113508 (2009).
    [Crossref]

2014 (1)

2013 (5)

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[Crossref] [PubMed]

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, K. W. Liu, and D. Z. Shen, “MgZnO p-n heterostructure light-emitting devices,” Opt. Lett. 38(12), 2113–2115 (2013).
[Crossref] [PubMed]

Y. Lu, F. Gu, C. Meng, H. Yu, Y. Ma, W. Fang, and L. Tong, “Multicolour laser from a single bandgap-graded CdSSe alloy nanoribbon,” Opt. Express 21(19), 22314–22319 (2013).
[Crossref] [PubMed]

L. Li, H. Lu, Z. Yang, L. Tong, Y. Bando, and D. Golberg, “Bandgap-graded CdSxSe1-x nanowires for high-performance field-effect transistors and solar cells,” Adv. Mater. 25(8), 1109–1113 (2013).
[Crossref] [PubMed]

Y. Y. Lai, Y. P. Lan, and T. C. Lu, “Strong light-matter interaction in ZnO microcavities,” Light Sci. Appl. 2(6), e76 (2013).
[Crossref]

2012 (3)

B. Laumer, F. Schuster, T. A. Wassner, M. Stutzmann, M. Rohnke, J. Schormann, and M. Eickhoff, “ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers,” J. Appl. Phys. 111(11), 113504 (2012).
[Crossref]

X. Zhuang, C. Z. Ning, and A. Pan, “Composition and bandgap-graded semiconductor alloy nanowires,” Adv. Mater. 24(1), 13–33 (2012).
[Crossref] [PubMed]

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

2011 (3)

R. Chen, B. Ling, X. W. Sun, and H. D. Sun, “Room temperature excitonic whispering gallery mode lasing from high-quality hexagonal ZnO microdisks,” Adv. Mater. 23(19), 2199–2204 (2011).
[Crossref] [PubMed]

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

H. L. Liang, Z. X. Mei, Q. H. Zhang, L. Gu, S. Liang, Y. N. Hou, D. Q. Ye, C. Z. Gu, R. C. Yu, and X. L. Du, “Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 98(22), 221902 (2011).
[Crossref]

2010 (2)

G. Konstantatos and E. H. Sargent, “Nanostructured materials for photon detection,” Nat. Nanotechnol. 5(6), 391–400 (2010).
[Crossref] [PubMed]

H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. Hou, and K. L. Choy, “Low-threshold electrically pumped random lasers,” Adv. Mater. 22(16), 1877–1881 (2010).
[Crossref] [PubMed]

2009 (5)

P. D. C. King, T. D. Veal, A. Schleife, J. Zuniga-Perez, B. Martel, P. H. Jefferson, F. Fuchs, V. Munoz-Sanjose, F. Bechstedt, and C. F. McConville, “Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations,” Phys. Rev. B 79(20), 205205 (2009).
[Crossref]

T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu, and X. L. Du, “Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si,” Appl. Phys. Lett. 94(11), 113508 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

X. L. Du, Z. X. Mei, Z. L. Liu, Y. Guo, T. C. Zhang, Y. N. Hou, Z. Zhang, Q. K. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

2008 (3)

Y. F. Li, B. Yao, Y. M. Lu, B. H. Li, Y. Q. Gai, C. X. Cong, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, D. Z. Shen, and X. W. Fan, “Valence-band offset of epitaxial ZnO/MgO (111) heterojunction determined by x-ray photoelectron spectroscopy,” Appl. Phys. Lett. 92(19), 192116 (2008).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Y. Z. Zhu, G. D. Chen, H. G. Ye, A. Walsh, C. Y. Moon, and S. H. Wei, “Electronic structure and phase stability of MgO, ZnO, CdO, and related ternary alloys,” Phys. Rev. B 77(24), 245209 (2008).
[Crossref]

2007 (1)

R. Dahal, T. M. Al Tahtamouni, J. Y. Lin, and H. X. Jiang, “AlN avalanche photodetectors,” Appl. Phys. Lett. 91(24), 243503 (2007).
[Crossref]

2005 (2)

J. Liang, H. Z. Wu, Y. F. Lao, N. B. Chen, P. Yu, and T. N. Xu, “Characterization of cubic phase MgZnO/Si(100) interfaces,” Appl. Surf. Sci. 252(4), 1147–1152 (2005).
[Crossref]

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

2003 (2)

W. I. Park, G. C. Yi, M. Kim, and S. J. Pennycook, “Quantum confinement observed in ZnO/ZnMgO nanorod heterostructures,” Adv. Mater. 15(6), 526–529 (2003).
[Crossref]

C. G. Van de Walle and J. Neugebauer, “Universal alignment of hydrogen levels in semiconductors, insulators and solutions,” Nature 423(6940), 626–628 (2003).
[Crossref] [PubMed]

1999 (2)

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980 (1999).
[Crossref]

D. G. Baik and S. M. Cho, “Application of sol-gel derived films for ZnO/n-Si junction solar cells,” Thin Solid Films 354(1), 227–231 (1999).
[Crossref]

1967 (1)

M. W. Williams and E. T. Arakawa, “Optical properties of single-crystal magnesium oxide,” J. Appl. Phys. 38(13), 5272 (1967).
[Crossref]

1958 (1)

J. Yamashita, “Oxygen band in magnesium oxide,” Phys. Rev. 111(3), 733–735 (1958).
[Crossref]

1957 (1)

H. Kroemer, “Quasi-electric and quasi-magnetic fields in nonuniform semiconductors,” RCA Rev. 18, 332 (1957).

Al Tahtamouni, T. M.

R. Dahal, T. M. Al Tahtamouni, J. Y. Lin, and H. X. Jiang, “AlN avalanche photodetectors,” Appl. Phys. Lett. 91(24), 243503 (2007).
[Crossref]

Alivov, Y. I.

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Arakawa, E. T.

M. W. Williams and E. T. Arakawa, “Optical properties of single-crystal magnesium oxide,” J. Appl. Phys. 38(13), 5272 (1967).
[Crossref]

Avrutin, V.

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Baik, D. G.

D. G. Baik and S. M. Cho, “Application of sol-gel derived films for ZnO/n-Si junction solar cells,” Thin Solid Films 354(1), 227–231 (1999).
[Crossref]

Bando, Y.

L. Li, H. Lu, Z. Yang, L. Tong, Y. Bando, and D. Golberg, “Bandgap-graded CdSxSe1-x nanowires for high-performance field-effect transistors and solar cells,” Adv. Mater. 25(8), 1109–1113 (2013).
[Crossref] [PubMed]

Bechstedt, F.

P. D. C. King, T. D. Veal, A. Schleife, J. Zuniga-Perez, B. Martel, P. H. Jefferson, F. Fuchs, V. Munoz-Sanjose, F. Bechstedt, and C. F. McConville, “Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations,” Phys. Rev. B 79(20), 205205 (2009).
[Crossref]

Chen, G. D.

Y. Z. Zhu, G. D. Chen, H. G. Ye, A. Walsh, C. Y. Moon, and S. H. Wei, “Electronic structure and phase stability of MgO, ZnO, CdO, and related ternary alloys,” Phys. Rev. B 77(24), 245209 (2008).
[Crossref]

Chen, H.

Chen, H. Y.

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

Chen, N. B.

J. Liang, H. Z. Wu, Y. F. Lao, N. B. Chen, P. Yu, and T. N. Xu, “Characterization of cubic phase MgZnO/Si(100) interfaces,” Appl. Surf. Sci. 252(4), 1147–1152 (2005).
[Crossref]

Chen, R.

R. Chen, B. Ling, X. W. Sun, and H. D. Sun, “Room temperature excitonic whispering gallery mode lasing from high-quality hexagonal ZnO microdisks,” Adv. Mater. 23(19), 2199–2204 (2011).
[Crossref] [PubMed]

Cho, S. J.

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Cho, S. M.

D. G. Baik and S. M. Cho, “Application of sol-gel derived films for ZnO/n-Si junction solar cells,” Thin Solid Films 354(1), 227–231 (1999).
[Crossref]

Choy, K. L.

H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. Hou, and K. L. Choy, “Low-threshold electrically pumped random lasers,” Adv. Mater. 22(16), 1877–1881 (2010).
[Crossref] [PubMed]

Cong, C. X.

Y. F. Li, B. Yao, Y. M. Lu, B. H. Li, Y. Q. Gai, C. X. Cong, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, D. Z. Shen, and X. W. Fan, “Valence-band offset of epitaxial ZnO/MgO (111) heterojunction determined by x-ray photoelectron spectroscopy,” Appl. Phys. Lett. 92(19), 192116 (2008).
[Crossref]

Dahal, R.

R. Dahal, T. M. Al Tahtamouni, J. Y. Lin, and H. X. Jiang, “AlN avalanche photodetectors,” Appl. Phys. Lett. 91(24), 243503 (2007).
[Crossref]

Dogan, S.

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Dong, X.

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[Crossref] [PubMed]

Du, G. T.

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[Crossref] [PubMed]

Du, X. L.

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

H. L. Liang, Z. X. Mei, Q. H. Zhang, L. Gu, S. Liang, Y. N. Hou, D. Q. Ye, C. Z. Gu, R. C. Yu, and X. L. Du, “Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 98(22), 221902 (2011).
[Crossref]

X. L. Du, Z. X. Mei, Z. L. Liu, Y. Guo, T. C. Zhang, Y. N. Hou, Z. Zhang, Q. K. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu, and X. L. Du, “Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si,” Appl. Phys. Lett. 94(11), 113508 (2009).
[Crossref]

Eickhoff, M.

B. Laumer, F. Schuster, T. A. Wassner, M. Stutzmann, M. Rohnke, J. Schormann, and M. Eickhoff, “ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers,” J. Appl. Phys. 111(11), 113504 (2012).
[Crossref]

Fan, X. W.

H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. Hou, and K. L. Choy, “Low-threshold electrically pumped random lasers,” Adv. Mater. 22(16), 1877–1881 (2010).
[Crossref] [PubMed]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Y. F. Li, B. Yao, Y. M. Lu, B. H. Li, Y. Q. Gai, C. X. Cong, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, D. Z. Shen, and X. W. Fan, “Valence-band offset of epitaxial ZnO/MgO (111) heterojunction determined by x-ray photoelectron spectroscopy,” Appl. Phys. Lett. 92(19), 192116 (2008).
[Crossref]

Fang, W.

Fuchs, F.

P. D. C. King, T. D. Veal, A. Schleife, J. Zuniga-Perez, B. Martel, P. H. Jefferson, F. Fuchs, V. Munoz-Sanjose, F. Bechstedt, and C. F. McConville, “Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations,” Phys. Rev. B 79(20), 205205 (2009).
[Crossref]

Gai, Y. Q.

Y. F. Li, B. Yao, Y. M. Lu, B. H. Li, Y. Q. Gai, C. X. Cong, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, D. Z. Shen, and X. W. Fan, “Valence-band offset of epitaxial ZnO/MgO (111) heterojunction determined by x-ray photoelectron spectroscopy,” Appl. Phys. Lett. 92(19), 192116 (2008).
[Crossref]

Golberg, D.

L. Li, H. Lu, Z. Yang, L. Tong, Y. Bando, and D. Golberg, “Bandgap-graded CdSxSe1-x nanowires for high-performance field-effect transistors and solar cells,” Adv. Mater. 25(8), 1109–1113 (2013).
[Crossref] [PubMed]

Gu, C. Z.

H. L. Liang, Z. X. Mei, Q. H. Zhang, L. Gu, S. Liang, Y. N. Hou, D. Q. Ye, C. Z. Gu, R. C. Yu, and X. L. Du, “Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 98(22), 221902 (2011).
[Crossref]

T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu, and X. L. Du, “Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si,” Appl. Phys. Lett. 94(11), 113508 (2009).
[Crossref]

Gu, F.

Gu, L.

H. L. Liang, Z. X. Mei, Q. H. Zhang, L. Gu, S. Liang, Y. N. Hou, D. Q. Ye, C. Z. Gu, R. C. Yu, and X. L. Du, “Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 98(22), 221902 (2011).
[Crossref]

Guo, Y.

X. L. Du, Z. X. Mei, Z. L. Liu, Y. Guo, T. C. Zhang, Y. N. Hou, Z. Zhang, Q. K. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu, and X. L. Du, “Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si,” Appl. Phys. Lett. 94(11), 113508 (2009).
[Crossref]

Hou, X.

H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. Hou, and K. L. Choy, “Low-threshold electrically pumped random lasers,” Adv. Mater. 22(16), 1877–1881 (2010).
[Crossref] [PubMed]

Hou, Y. N.

H. L. Liang, Z. X. Mei, Q. H. Zhang, L. Gu, S. Liang, Y. N. Hou, D. Q. Ye, C. Z. Gu, R. C. Yu, and X. L. Du, “Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 98(22), 221902 (2011).
[Crossref]

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

X. L. Du, Z. X. Mei, Z. L. Liu, Y. Guo, T. C. Zhang, Y. N. Hou, Z. Zhang, Q. K. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Jefferson, P. H.

P. D. C. King, T. D. Veal, A. Schleife, J. Zuniga-Perez, B. Martel, P. H. Jefferson, F. Fuchs, V. Munoz-Sanjose, F. Bechstedt, and C. F. McConville, “Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations,” Phys. Rev. B 79(20), 205205 (2009).
[Crossref]

Jiang, D. Y.

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Jiang, H. X.

R. Dahal, T. M. Al Tahtamouni, J. Y. Lin, and H. X. Jiang, “AlN avalanche photodetectors,” Appl. Phys. Lett. 91(24), 243503 (2007).
[Crossref]

Jiang, M.

Ju, Z. G.

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Kawasaki, M.

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980 (1999).
[Crossref]

Kim, M.

W. I. Park, G. C. Yi, M. Kim, and S. J. Pennycook, “Quantum confinement observed in ZnO/ZnMgO nanorod heterostructures,” Adv. Mater. 15(6), 526–529 (2003).
[Crossref]

King, P. D. C.

P. D. C. King, T. D. Veal, A. Schleife, J. Zuniga-Perez, B. Martel, P. H. Jefferson, F. Fuchs, V. Munoz-Sanjose, F. Bechstedt, and C. F. McConville, “Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations,” Phys. Rev. B 79(20), 205205 (2009).
[Crossref]

Koinuma, H.

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980 (1999).
[Crossref]

Konstantatos, G.

G. Konstantatos and E. H. Sargent, “Nanostructured materials for photon detection,” Nat. Nanotechnol. 5(6), 391–400 (2010).
[Crossref] [PubMed]

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H. Kroemer, “Quasi-electric and quasi-magnetic fields in nonuniform semiconductors,” RCA Rev. 18, 332 (1957).

Kuznetsov, A. Y.

X. L. Du, Z. X. Mei, Z. L. Liu, Y. Guo, T. C. Zhang, Y. N. Hou, Z. Zhang, Q. K. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Lai, Y. Y.

Y. Y. Lai, Y. P. Lan, and T. C. Lu, “Strong light-matter interaction in ZnO microcavities,” Light Sci. Appl. 2(6), e76 (2013).
[Crossref]

Lan, Y. P.

Y. Y. Lai, Y. P. Lan, and T. C. Lu, “Strong light-matter interaction in ZnO microcavities,” Light Sci. Appl. 2(6), e76 (2013).
[Crossref]

Lao, Y. F.

J. Liang, H. Z. Wu, Y. F. Lao, N. B. Chen, P. Yu, and T. N. Xu, “Characterization of cubic phase MgZnO/Si(100) interfaces,” Appl. Surf. Sci. 252(4), 1147–1152 (2005).
[Crossref]

Laumer, B.

B. Laumer, F. Schuster, T. A. Wassner, M. Stutzmann, M. Rohnke, J. Schormann, and M. Eickhoff, “ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers,” J. Appl. Phys. 111(11), 113504 (2012).
[Crossref]

Li, B.

Li, B. H.

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, K. W. Liu, and D. Z. Shen, “MgZnO p-n heterostructure light-emitting devices,” Opt. Lett. 38(12), 2113–2115 (2013).
[Crossref] [PubMed]

H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. Hou, and K. L. Choy, “Low-threshold electrically pumped random lasers,” Adv. Mater. 22(16), 1877–1881 (2010).
[Crossref] [PubMed]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Y. F. Li, B. Yao, Y. M. Lu, B. H. Li, Y. Q. Gai, C. X. Cong, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, D. Z. Shen, and X. W. Fan, “Valence-band offset of epitaxial ZnO/MgO (111) heterojunction determined by x-ray photoelectron spectroscopy,” Appl. Phys. Lett. 92(19), 192116 (2008).
[Crossref]

Li, L.

L. Li, H. Lu, Z. Yang, L. Tong, Y. Bando, and D. Golberg, “Bandgap-graded CdSxSe1-x nanowires for high-performance field-effect transistors and solar cells,” Adv. Mater. 25(8), 1109–1113 (2013).
[Crossref] [PubMed]

Li, Y. F.

Y. F. Li, B. Yao, Y. M. Lu, B. H. Li, Y. Q. Gai, C. X. Cong, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, D. Z. Shen, and X. W. Fan, “Valence-band offset of epitaxial ZnO/MgO (111) heterojunction determined by x-ray photoelectron spectroscopy,” Appl. Phys. Lett. 92(19), 192116 (2008).
[Crossref]

Liang, H. L.

H. L. Liang, Z. X. Mei, Q. H. Zhang, L. Gu, S. Liang, Y. N. Hou, D. Q. Ye, C. Z. Gu, R. C. Yu, and X. L. Du, “Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 98(22), 221902 (2011).
[Crossref]

Liang, J.

J. Liang, H. Z. Wu, Y. F. Lao, N. B. Chen, P. Yu, and T. N. Xu, “Characterization of cubic phase MgZnO/Si(100) interfaces,” Appl. Surf. Sci. 252(4), 1147–1152 (2005).
[Crossref]

Liang, S.

H. L. Liang, Z. X. Mei, Q. H. Zhang, L. Gu, S. Liang, Y. N. Hou, D. Q. Ye, C. Z. Gu, R. C. Yu, and X. L. Du, “Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 98(22), 221902 (2011).
[Crossref]

Lin, J. Y.

R. Dahal, T. M. Al Tahtamouni, J. Y. Lin, and H. X. Jiang, “AlN avalanche photodetectors,” Appl. Phys. Lett. 91(24), 243503 (2007).
[Crossref]

Ling, B.

R. Chen, B. Ling, X. W. Sun, and H. D. Sun, “Room temperature excitonic whispering gallery mode lasing from high-quality hexagonal ZnO microdisks,” Adv. Mater. 23(19), 2199–2204 (2011).
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U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Liu, J. S.

Liu, K. W.

Liu, Z. L.

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

X. L. Du, Z. X. Mei, Z. L. Liu, Y. Guo, T. C. Zhang, Y. N. Hou, Z. Zhang, Q. K. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Lu, H.

L. Li, H. Lu, Z. Yang, L. Tong, Y. Bando, and D. Golberg, “Bandgap-graded CdSxSe1-x nanowires for high-performance field-effect transistors and solar cells,” Adv. Mater. 25(8), 1109–1113 (2013).
[Crossref] [PubMed]

Lu, T. C.

Y. Y. Lai, Y. P. Lan, and T. C. Lu, “Strong light-matter interaction in ZnO microcavities,” Light Sci. Appl. 2(6), e76 (2013).
[Crossref]

Lu, Y.

Lu, Y. M.

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Y. F. Li, B. Yao, Y. M. Lu, B. H. Li, Y. Q. Gai, C. X. Cong, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, D. Z. Shen, and X. W. Fan, “Valence-band offset of epitaxial ZnO/MgO (111) heterojunction determined by x-ray photoelectron spectroscopy,” Appl. Phys. Lett. 92(19), 192116 (2008).
[Crossref]

Ma, Y.

Martel, B.

P. D. C. King, T. D. Veal, A. Schleife, J. Zuniga-Perez, B. Martel, P. H. Jefferson, F. Fuchs, V. Munoz-Sanjose, F. Bechstedt, and C. F. McConville, “Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations,” Phys. Rev. B 79(20), 205205 (2009).
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McConville, C. F.

P. D. C. King, T. D. Veal, A. Schleife, J. Zuniga-Perez, B. Martel, P. H. Jefferson, F. Fuchs, V. Munoz-Sanjose, F. Bechstedt, and C. F. McConville, “Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations,” Phys. Rev. B 79(20), 205205 (2009).
[Crossref]

Mei, Z. X.

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

H. L. Liang, Z. X. Mei, Q. H. Zhang, L. Gu, S. Liang, Y. N. Hou, D. Q. Ye, C. Z. Gu, R. C. Yu, and X. L. Du, “Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 98(22), 221902 (2011).
[Crossref]

X. L. Du, Z. X. Mei, Z. L. Liu, Y. Guo, T. C. Zhang, Y. N. Hou, Z. Zhang, Q. K. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu, and X. L. Du, “Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si,” Appl. Phys. Lett. 94(11), 113508 (2009).
[Crossref]

Meng, C.

Moon, C. Y.

Y. Z. Zhu, G. D. Chen, H. G. Ye, A. Walsh, C. Y. Moon, and S. H. Wei, “Electronic structure and phase stability of MgO, ZnO, CdO, and related ternary alloys,” Phys. Rev. B 77(24), 245209 (2008).
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U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Munoz-Sanjose, V.

P. D. C. King, T. D. Veal, A. Schleife, J. Zuniga-Perez, B. Martel, P. H. Jefferson, F. Fuchs, V. Munoz-Sanjose, F. Bechstedt, and C. F. McConville, “Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations,” Phys. Rev. B 79(20), 205205 (2009).
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C. G. Van de Walle and J. Neugebauer, “Universal alignment of hydrogen levels in semiconductors, insulators and solutions,” Nature 423(6940), 626–628 (2003).
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Ning, C. Z.

X. Zhuang, C. Z. Ning, and A. Pan, “Composition and bandgap-graded semiconductor alloy nanowires,” Adv. Mater. 24(1), 13–33 (2012).
[Crossref] [PubMed]

Ohkubo, I.

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980 (1999).
[Crossref]

Ohtomo, A.

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980 (1999).
[Crossref]

Özgur, U.

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Pan, A.

X. Zhuang, C. Z. Ning, and A. Pan, “Composition and bandgap-graded semiconductor alloy nanowires,” Adv. Mater. 24(1), 13–33 (2012).
[Crossref] [PubMed]

Park, W. I.

W. I. Park, G. C. Yi, M. Kim, and S. J. Pennycook, “Quantum confinement observed in ZnO/ZnMgO nanorod heterostructures,” Adv. Mater. 15(6), 526–529 (2003).
[Crossref]

Pennycook, S. J.

W. I. Park, G. C. Yi, M. Kim, and S. J. Pennycook, “Quantum confinement observed in ZnO/ZnMgO nanorod heterostructures,” Adv. Mater. 15(6), 526–529 (2003).
[Crossref]

Reshchikov, M. A.

U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[Crossref]

Rohnke, M.

B. Laumer, F. Schuster, T. A. Wassner, M. Stutzmann, M. Rohnke, J. Schormann, and M. Eickhoff, “ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers,” J. Appl. Phys. 111(11), 113504 (2012).
[Crossref]

Sargent, E. H.

G. Konstantatos and E. H. Sargent, “Nanostructured materials for photon detection,” Nat. Nanotechnol. 5(6), 391–400 (2010).
[Crossref] [PubMed]

Schleife, A.

P. D. C. King, T. D. Veal, A. Schleife, J. Zuniga-Perez, B. Martel, P. H. Jefferson, F. Fuchs, V. Munoz-Sanjose, F. Bechstedt, and C. F. McConville, “Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations,” Phys. Rev. B 79(20), 205205 (2009).
[Crossref]

Schormann, J.

B. Laumer, F. Schuster, T. A. Wassner, M. Stutzmann, M. Rohnke, J. Schormann, and M. Eickhoff, “ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers,” J. Appl. Phys. 111(11), 113504 (2012).
[Crossref]

Schuster, F.

B. Laumer, F. Schuster, T. A. Wassner, M. Stutzmann, M. Rohnke, J. Schormann, and M. Eickhoff, “ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers,” J. Appl. Phys. 111(11), 113504 (2012).
[Crossref]

Segawa, Y.

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980 (1999).
[Crossref]

Shan, C.

Shan, C. X.

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, K. W. Liu, and D. Z. Shen, “MgZnO p-n heterostructure light-emitting devices,” Opt. Lett. 38(12), 2113–2115 (2013).
[Crossref] [PubMed]

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. Hou, and K. L. Choy, “Low-threshold electrically pumped random lasers,” Adv. Mater. 22(16), 1877–1881 (2010).
[Crossref] [PubMed]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Shen, D.

Shen, D. Z.

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, K. W. Liu, and D. Z. Shen, “MgZnO p-n heterostructure light-emitting devices,” Opt. Lett. 38(12), 2113–2115 (2013).
[Crossref] [PubMed]

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. Hou, and K. L. Choy, “Low-threshold electrically pumped random lasers,” Adv. Mater. 22(16), 1877–1881 (2010).
[Crossref] [PubMed]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Y. F. Li, B. Yao, Y. M. Lu, B. H. Li, Y. Q. Gai, C. X. Cong, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, D. Z. Shen, and X. W. Fan, “Valence-band offset of epitaxial ZnO/MgO (111) heterojunction determined by x-ray photoelectron spectroscopy,” Appl. Phys. Lett. 92(19), 192116 (2008).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Shi, Z. F.

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[Crossref] [PubMed]

Stutzmann, M.

B. Laumer, F. Schuster, T. A. Wassner, M. Stutzmann, M. Rohnke, J. Schormann, and M. Eickhoff, “ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers,” J. Appl. Phys. 111(11), 113504 (2012).
[Crossref]

Sun, H. D.

R. Chen, B. Ling, X. W. Sun, and H. D. Sun, “Room temperature excitonic whispering gallery mode lasing from high-quality hexagonal ZnO microdisks,” Adv. Mater. 23(19), 2199–2204 (2011).
[Crossref] [PubMed]

Sun, X. W.

R. Chen, B. Ling, X. W. Sun, and H. D. Sun, “Room temperature excitonic whispering gallery mode lasing from high-quality hexagonal ZnO microdisks,” Adv. Mater. 23(19), 2199–2204 (2011).
[Crossref] [PubMed]

Tang, Z. K.

H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. Hou, and K. L. Choy, “Low-threshold electrically pumped random lasers,” Adv. Mater. 22(16), 1877–1881 (2010).
[Crossref] [PubMed]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

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U. Özgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
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Tong, L.

L. Li, H. Lu, Z. Yang, L. Tong, Y. Bando, and D. Golberg, “Bandgap-graded CdSxSe1-x nanowires for high-performance field-effect transistors and solar cells,” Adv. Mater. 25(8), 1109–1113 (2013).
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Y. Lu, F. Gu, C. Meng, H. Yu, Y. Ma, W. Fang, and L. Tong, “Multicolour laser from a single bandgap-graded CdSSe alloy nanoribbon,” Opt. Express 21(19), 22314–22319 (2013).
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C. G. Van de Walle and J. Neugebauer, “Universal alignment of hydrogen levels in semiconductors, insulators and solutions,” Nature 423(6940), 626–628 (2003).
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P. D. C. King, T. D. Veal, A. Schleife, J. Zuniga-Perez, B. Martel, P. H. Jefferson, F. Fuchs, V. Munoz-Sanjose, F. Bechstedt, and C. F. McConville, “Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations,” Phys. Rev. B 79(20), 205205 (2009).
[Crossref]

Walsh, A.

Y. Z. Zhu, G. D. Chen, H. G. Ye, A. Walsh, C. Y. Moon, and S. H. Wei, “Electronic structure and phase stability of MgO, ZnO, CdO, and related ternary alloys,” Phys. Rev. B 77(24), 245209 (2008).
[Crossref]

Wang, H.

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[Crossref] [PubMed]

Wang, L. K.

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Wang, S.

Wassner, T. A.

B. Laumer, F. Schuster, T. A. Wassner, M. Stutzmann, M. Rohnke, J. Schormann, and M. Eickhoff, “ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers,” J. Appl. Phys. 111(11), 113504 (2012).
[Crossref]

Wei, S. H.

Y. Z. Zhu, G. D. Chen, H. G. Ye, A. Walsh, C. Y. Moon, and S. H. Wei, “Electronic structure and phase stability of MgO, ZnO, CdO, and related ternary alloys,” Phys. Rev. B 77(24), 245209 (2008).
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J. Liang, H. Z. Wu, Y. F. Lao, N. B. Chen, P. Yu, and T. N. Xu, “Characterization of cubic phase MgZnO/Si(100) interfaces,” Appl. Surf. Sci. 252(4), 1147–1152 (2005).
[Crossref]

Xia, X. C.

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[Crossref] [PubMed]

Xie, X.

Xie, X. H.

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

Xu, T. N.

J. Liang, H. Z. Wu, Y. F. Lao, N. B. Chen, P. Yu, and T. N. Xu, “Characterization of cubic phase MgZnO/Si(100) interfaces,” Appl. Surf. Sci. 252(4), 1147–1152 (2005).
[Crossref]

Xue, Q. K.

X. L. Du, Z. X. Mei, Z. L. Liu, Y. Guo, T. C. Zhang, Y. N. Hou, Z. Zhang, Q. K. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
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L. Li, H. Lu, Z. Yang, L. Tong, Y. Bando, and D. Golberg, “Bandgap-graded CdSxSe1-x nanowires for high-performance field-effect transistors and solar cells,” Adv. Mater. 25(8), 1109–1113 (2013).
[Crossref] [PubMed]

Yao, B.

H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. Hou, and K. L. Choy, “Low-threshold electrically pumped random lasers,” Adv. Mater. 22(16), 1877–1881 (2010).
[Crossref] [PubMed]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Y. F. Li, B. Yao, Y. M. Lu, B. H. Li, Y. Q. Gai, C. X. Cong, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, D. Z. Shen, and X. W. Fan, “Valence-band offset of epitaxial ZnO/MgO (111) heterojunction determined by x-ray photoelectron spectroscopy,” Appl. Phys. Lett. 92(19), 192116 (2008).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Yasuda, T.

A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, “Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices,” Appl. Phys. Lett. 75(7), 980 (1999).
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H. L. Liang, Z. X. Mei, Q. H. Zhang, L. Gu, S. Liang, Y. N. Hou, D. Q. Ye, C. Z. Gu, R. C. Yu, and X. L. Du, “Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 98(22), 221902 (2011).
[Crossref]

Ye, H. G.

Y. Z. Zhu, G. D. Chen, H. G. Ye, A. Walsh, C. Y. Moon, and S. H. Wei, “Electronic structure and phase stability of MgO, ZnO, CdO, and related ternary alloys,” Phys. Rev. B 77(24), 245209 (2008).
[Crossref]

Yi, G. C.

W. I. Park, G. C. Yi, M. Kim, and S. J. Pennycook, “Quantum confinement observed in ZnO/ZnMgO nanorod heterostructures,” Adv. Mater. 15(6), 526–529 (2003).
[Crossref]

Yu, H.

Yu, P.

J. Liang, H. Z. Wu, Y. F. Lao, N. B. Chen, P. Yu, and T. N. Xu, “Characterization of cubic phase MgZnO/Si(100) interfaces,” Appl. Surf. Sci. 252(4), 1147–1152 (2005).
[Crossref]

Yu, R. C.

H. L. Liang, Z. X. Mei, Q. H. Zhang, L. Gu, S. Liang, Y. N. Hou, D. Q. Ye, C. Z. Gu, R. C. Yu, and X. L. Du, “Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 98(22), 221902 (2011).
[Crossref]

Zhang, B. L.

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[Crossref] [PubMed]

Zhang, J. Y.

H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. Hou, and K. L. Choy, “Low-threshold electrically pumped random lasers,” Adv. Mater. 22(16), 1877–1881 (2010).
[Crossref] [PubMed]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Y. F. Li, B. Yao, Y. M. Lu, B. H. Li, Y. Q. Gai, C. X. Cong, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, D. Z. Shen, and X. W. Fan, “Valence-band offset of epitaxial ZnO/MgO (111) heterojunction determined by x-ray photoelectron spectroscopy,” Appl. Phys. Lett. 92(19), 192116 (2008).
[Crossref]

Zhang, Q. H.

H. L. Liang, Z. X. Mei, Q. H. Zhang, L. Gu, S. Liang, Y. N. Hou, D. Q. Ye, C. Z. Gu, R. C. Yu, and X. L. Du, “Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors,” Appl. Phys. Lett. 98(22), 221902 (2011).
[Crossref]

Zhang, T. C.

Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

X. L. Du, Z. X. Mei, Z. L. Liu, Y. Guo, T. C. Zhang, Y. N. Hou, Z. Zhang, Q. K. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

T. C. Zhang, Y. Guo, Z. X. Mei, C. Z. Gu, and X. L. Du, “Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si,” Appl. Phys. Lett. 94(11), 113508 (2009).
[Crossref]

Zhang, Y. T.

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[Crossref] [PubMed]

Zhang, Z.

X. Xie, Z. Zhang, B. Li, S. Wang, M. Jiang, C. Shan, D. Zhao, H. Chen, and D. Shen, “Enhanced solar-blind responsivity of photodetectors based on cubic MgZnO films via gallium doping,” Opt. Express 22(1), 246–253 (2014).
[Crossref] [PubMed]

X. L. Du, Z. X. Mei, Z. L. Liu, Y. Guo, T. C. Zhang, Y. N. Hou, Z. Zhang, Q. K. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

Zhang, Z. Z.

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, K. W. Liu, and D. Z. Shen, “MgZnO p-n heterostructure light-emitting devices,” Opt. Lett. 38(12), 2113–2115 (2013).
[Crossref] [PubMed]

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. Hou, and K. L. Choy, “Low-threshold electrically pumped random lasers,” Adv. Mater. 22(16), 1877–1881 (2010).
[Crossref] [PubMed]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Y. F. Li, B. Yao, Y. M. Lu, B. H. Li, Y. Q. Gai, C. X. Cong, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, D. Z. Shen, and X. W. Fan, “Valence-band offset of epitaxial ZnO/MgO (111) heterojunction determined by x-ray photoelectron spectroscopy,” Appl. Phys. Lett. 92(19), 192116 (2008).
[Crossref]

Zhao, D.

Zhao, D. X.

H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. Hou, and K. L. Choy, “Low-threshold electrically pumped random lasers,” Adv. Mater. 22(16), 1877–1881 (2010).
[Crossref] [PubMed]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Y. F. Li, B. Yao, Y. M. Lu, B. H. Li, Y. Q. Gai, C. X. Cong, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, D. Z. Shen, and X. W. Fan, “Valence-band offset of epitaxial ZnO/MgO (111) heterojunction determined by x-ray photoelectron spectroscopy,” Appl. Phys. Lett. 92(19), 192116 (2008).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Zhao, L.

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[Crossref] [PubMed]

Zhao, W.

Z. F. Shi, Y. T. Zhang, X. C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction,” Nanoscale 5(11), 5080–5085 (2013).
[Crossref] [PubMed]

Zheng, J.

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Zhu, H.

H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. Hou, and K. L. Choy, “Low-threshold electrically pumped random lasers,” Adv. Mater. 22(16), 1877–1881 (2010).
[Crossref] [PubMed]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

Zhu, Y. Z.

Y. Z. Zhu, G. D. Chen, H. G. Ye, A. Walsh, C. Y. Moon, and S. H. Wei, “Electronic structure and phase stability of MgO, ZnO, CdO, and related ternary alloys,” Phys. Rev. B 77(24), 245209 (2008).
[Crossref]

Zhuang, X.

X. Zhuang, C. Z. Ning, and A. Pan, “Composition and bandgap-graded semiconductor alloy nanowires,” Adv. Mater. 24(1), 13–33 (2012).
[Crossref] [PubMed]

Zuniga-Perez, J.

P. D. C. King, T. D. Veal, A. Schleife, J. Zuniga-Perez, B. Martel, P. H. Jefferson, F. Fuchs, V. Munoz-Sanjose, F. Bechstedt, and C. F. McConville, “Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations,” Phys. Rev. B 79(20), 205205 (2009).
[Crossref]

Adv. Mater. (7)

X. L. Du, Z. X. Mei, Z. L. Liu, Y. Guo, T. C. Zhang, Y. N. Hou, Z. Zhang, Q. K. Xue, and A. Y. Kuznetsov, “Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors,” Adv. Mater. 21(45), 4625–4630 (2009).
[Crossref]

W. I. Park, G. C. Yi, M. Kim, and S. J. Pennycook, “Quantum confinement observed in ZnO/ZnMgO nanorod heterostructures,” Adv. Mater. 15(6), 526–529 (2003).
[Crossref]

R. Chen, B. Ling, X. W. Sun, and H. D. Sun, “Room temperature excitonic whispering gallery mode lasing from high-quality hexagonal ZnO microdisks,” Adv. Mater. 23(19), 2199–2204 (2011).
[Crossref] [PubMed]

H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tang, “Ultralow-threshold laser realized in zinc oxide,” Adv. Mater. 21(16), 1613–1617 (2009).
[Crossref]

H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. Hou, and K. L. Choy, “Low-threshold electrically pumped random lasers,” Adv. Mater. 22(16), 1877–1881 (2010).
[Crossref] [PubMed]

X. Zhuang, C. Z. Ning, and A. Pan, “Composition and bandgap-graded semiconductor alloy nanowires,” Adv. Mater. 24(1), 13–33 (2012).
[Crossref] [PubMed]

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Figures (5)

Fig. 1
Fig. 1 (a) XRD pattern of the heterostructure. SEM image of the GBGC-MgZnO film (b) top view and (c) side view. (d) Line-scan profile across the growth direction of the film.
Fig. 2
Fig. 2 (a) The schematic of the detector for measuring photoresponse. (b) I-V curve of the detector under dark condition at room temperature. The reverse current-voltage is magnified in the inset. (c) Gain extracted from the photocurrent measurements. The inset is reverse I-V characteristics of the detector in dark and under 254 nm light illumination.
Fig. 3
Fig. 3 (a) Transmission data (blue circle) from reference GBGC-MgZnO film grown on a c-plane sapphire. The spectral response (violet triangle) of the detector under 1 V. (b) Responsivity of the photodetector for different reverse bias voltages.
Fig. 4
Fig. 4 Time-resolved photocurrent measurements. (a) Photocurrent transients measured on the photodetector at different biases. (b) Decay time for different bias voltages.
Fig. 5
Fig. 5 Schematic diagram showing the band alignment of the heterojunction (a) under equilibrium condition (b) under illumination at reverse bias.

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