Abstract

We demonstrate that the use of silica nanospheres (SNs) with sizes close to the emission wavelength of light-emitting diodes (LEDs) can enhance the light output power and manipulate the far-field emission pattern. Near-ultraviolet (NUV)-LEDs grown on a patterned sapphire substrate embedded with 300 nm SNs show a three times higher light output power than that without SNs, when measured through the top side. For far-field emission measurements, the LEDs embedded with 300 nm SNs show the significant increase of front emission due to the improved crystal quality of epitaxial films as well as the increase of Mie scattering effect of SNs. These experimental results indicate the important role of the size of embedded SNs in enhancing the light output power for NUV-LEDs.

© 2014 Optical Society of America

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References

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    [Crossref] [PubMed]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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2013 (2)

C.-Y. Cho, M. Choe, S.-J. Lee, S.-H. Hong, T. Lee, W. Lim, S.-T. Kim, and S.-J. Park, “Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene,” J. Appl. Phys. 113(11), 113102 (2013).
[Crossref]

Y. J. Park, J. H. Kang, H. K. Kim, Y. S. Katharria, N. Han, M. Han, B. D. Ryu, E.-K. Suh, H. K. Cho, and C.-H. Hong, “Two-step lateral overgrowth of GaN for improved emission from blue light-emitting diodes,” J. Cryst. Growth 372, 157–162 (2013).
[Crossref]

2012 (2)

D. J. Chae, D. Y. Kim, T. G. Kim, Y. M. Sung, and M. D. Kim, “AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes,” Appl. Phys. Lett. 100(8), 081110 (2012).
[Crossref]

H. Lu, T. Yu, G. Yuan, X. Chen, Z. Chen, G. Chen, and G. Zhang, “Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells,” Opt. Lett. 37(17), 3693–3695 (2012).
[Crossref] [PubMed]

2011 (1)

2007 (1)

R. H. Horng, W. K. Wang, S. C. Huang, S. Y. Huang, S. H. Lin, C. F. Lin, and D. S. Wuu, “Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates,” J. Cryst. Growth 298, 219–222 (2007).
[Crossref]

2005 (3)

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mater. Sci. Eng. B-Adv. 122, 184–187 (2005).

M. D. Lechner, “Influence of Mie scattering on nanoparticles with different particle sizes and shapes: photometry and analytical ultracentrifugation with absorption optics,” J. Serb. Chem. Soc. 70, 361–369 (2005).

J. R. Lee, S. L. Na, J. H. Jeong, S. N. Lee, J. S. Jang, S. H. Lee, J. J. Jung, J. O. Song, T. Y. Seong, and S. J. Park, “Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes,” J. Electrochem. Soc. 152(1), G92 (2005).
[Crossref]

2004 (1)

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[Crossref]

2001 (2)

R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Döhler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans, “Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes,” Appl. Phys. Lett. 79(15), 2315 (2001).
[Crossref]

J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett. 78(22), 3379 (2001).
[Crossref]

Borghs, G.

R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Döhler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans, “Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes,” Appl. Phys. Lett. 79(15), 2315 (2001).
[Crossref]

Chae, D. J.

D. J. Chae, D. Y. Kim, T. G. Kim, Y. M. Sung, and M. D. Kim, “AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes,” Appl. Phys. Lett. 100(8), 081110 (2012).
[Crossref]

Chen, G.

Chen, X.

Chen, Z.

Cho, C.-Y.

C.-Y. Cho, M. Choe, S.-J. Lee, S.-H. Hong, T. Lee, W. Lim, S.-T. Kim, and S.-J. Park, “Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene,” J. Appl. Phys. 113(11), 113102 (2013).
[Crossref]

Cho, H. K.

Y. J. Park, J. H. Kang, H. K. Kim, Y. S. Katharria, N. Han, M. Han, B. D. Ryu, E.-K. Suh, H. K. Cho, and C.-H. Hong, “Two-step lateral overgrowth of GaN for improved emission from blue light-emitting diodes,” J. Cryst. Growth 372, 157–162 (2013).
[Crossref]

Choe, M.

C.-Y. Cho, M. Choe, S.-J. Lee, S.-H. Hong, T. Lee, W. Lim, S.-T. Kim, and S.-J. Park, “Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene,” J. Appl. Phys. 113(11), 113102 (2013).
[Crossref]

Chu, Y. T.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mater. Sci. Eng. B-Adv. 122, 184–187 (2005).

DenBaars, S. P.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[Crossref]

Döhler, G. H.

R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Döhler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans, “Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes,” Appl. Phys. Lett. 79(15), 2315 (2001).
[Crossref]

Dutta, B.

R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Döhler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans, “Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes,” Appl. Phys. Lett. 79(15), 2315 (2001).
[Crossref]

Fujii, T.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[Crossref]

Gao, Y.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[Crossref]

Gardner, N. F.

J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett. 78(22), 3379 (2001).
[Crossref]

Han, M.

Y. J. Park, J. H. Kang, H. K. Kim, Y. S. Katharria, N. Han, M. Han, B. D. Ryu, E.-K. Suh, H. K. Cho, and C.-H. Hong, “Two-step lateral overgrowth of GaN for improved emission from blue light-emitting diodes,” J. Cryst. Growth 372, 157–162 (2013).
[Crossref]

Han, N.

Y. J. Park, J. H. Kang, H. K. Kim, Y. S. Katharria, N. Han, M. Han, B. D. Ryu, E.-K. Suh, H. K. Cho, and C.-H. Hong, “Two-step lateral overgrowth of GaN for improved emission from blue light-emitting diodes,” J. Cryst. Growth 372, 157–162 (2013).
[Crossref]

Heremans, P.

R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Döhler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans, “Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes,” Appl. Phys. Lett. 79(15), 2315 (2001).
[Crossref]

Hong, C.-H.

Y. J. Park, J. H. Kang, H. K. Kim, Y. S. Katharria, N. Han, M. Han, B. D. Ryu, E.-K. Suh, H. K. Cho, and C.-H. Hong, “Two-step lateral overgrowth of GaN for improved emission from blue light-emitting diodes,” J. Cryst. Growth 372, 157–162 (2013).
[Crossref]

Hong, S.-H.

C.-Y. Cho, M. Choe, S.-J. Lee, S.-H. Hong, T. Lee, W. Lim, S.-T. Kim, and S.-J. Park, “Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene,” J. Appl. Phys. 113(11), 113102 (2013).
[Crossref]

Horng, R. H.

R. H. Horng, W. K. Wang, S. C. Huang, S. Y. Huang, S. H. Lin, C. F. Lin, and D. S. Wuu, “Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates,” J. Cryst. Growth 298, 219–222 (2007).
[Crossref]

Hsieh, M. H.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mater. Sci. Eng. B-Adv. 122, 184–187 (2005).

Hsu, T. C.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mater. Sci. Eng. B-Adv. 122, 184–187 (2005).

Hu, E. L.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[Crossref]

Huang, S. C.

R. H. Horng, W. K. Wang, S. C. Huang, S. Y. Huang, S. H. Lin, C. F. Lin, and D. S. Wuu, “Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates,” J. Cryst. Growth 298, 219–222 (2007).
[Crossref]

Huang, S. Y.

R. H. Horng, W. K. Wang, S. C. Huang, S. Y. Huang, S. H. Lin, C. F. Lin, and D. S. Wuu, “Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates,” J. Cryst. Growth 298, 219–222 (2007).
[Crossref]

Jang, J. S.

J. R. Lee, S. L. Na, J. H. Jeong, S. N. Lee, J. S. Jang, S. H. Lee, J. J. Jung, J. O. Song, T. Y. Seong, and S. J. Park, “Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes,” J. Electrochem. Soc. 152(1), G92 (2005).
[Crossref]

Jeong, H.

Jeong, J. H.

J. R. Lee, S. L. Na, J. H. Jeong, S. N. Lee, J. S. Jang, S. H. Lee, J. J. Jung, J. O. Song, T. Y. Seong, and S. J. Park, “Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes,” J. Electrochem. Soc. 152(1), G92 (2005).
[Crossref]

Jeong, M. S.

Jou, M. J.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mater. Sci. Eng. B-Adv. 122, 184–187 (2005).

Jung, J. J.

J. R. Lee, S. L. Na, J. H. Jeong, S. N. Lee, J. S. Jang, S. H. Lee, J. J. Jung, J. O. Song, T. Y. Seong, and S. J. Park, “Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes,” J. Electrochem. Soc. 152(1), G92 (2005).
[Crossref]

Kang, J. H.

Y. J. Park, J. H. Kang, H. K. Kim, Y. S. Katharria, N. Han, M. Han, B. D. Ryu, E.-K. Suh, H. K. Cho, and C.-H. Hong, “Two-step lateral overgrowth of GaN for improved emission from blue light-emitting diodes,” J. Cryst. Growth 372, 157–162 (2013).
[Crossref]

Katharria, Y. S.

Y. J. Park, J. H. Kang, H. K. Kim, Y. S. Katharria, N. Han, M. Han, B. D. Ryu, E.-K. Suh, H. K. Cho, and C.-H. Hong, “Two-step lateral overgrowth of GaN for improved emission from blue light-emitting diodes,” J. Cryst. Growth 372, 157–162 (2013).
[Crossref]

Kern, R. S.

J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett. 78(22), 3379 (2001).
[Crossref]

Kiesel, P.

R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Döhler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans, “Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes,” Appl. Phys. Lett. 79(15), 2315 (2001).
[Crossref]

Kim, D. Y.

D. J. Chae, D. Y. Kim, T. G. Kim, Y. M. Sung, and M. D. Kim, “AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes,” Appl. Phys. Lett. 100(8), 081110 (2012).
[Crossref]

Kim, H.

Kim, H. K.

Y. J. Park, J. H. Kang, H. K. Kim, Y. S. Katharria, N. Han, M. Han, B. D. Ryu, E.-K. Suh, H. K. Cho, and C.-H. Hong, “Two-step lateral overgrowth of GaN for improved emission from blue light-emitting diodes,” J. Cryst. Growth 372, 157–162 (2013).
[Crossref]

Kim, M. D.

D. J. Chae, D. Y. Kim, T. G. Kim, Y. M. Sung, and M. D. Kim, “AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes,” Appl. Phys. Lett. 100(8), 081110 (2012).
[Crossref]

Kim, S.-T.

C.-Y. Cho, M. Choe, S.-J. Lee, S.-H. Hong, T. Lee, W. Lim, S.-T. Kim, and S.-J. Park, “Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene,” J. Appl. Phys. 113(11), 113102 (2013).
[Crossref]

Kim, T. G.

D. J. Chae, D. Y. Kim, T. G. Kim, Y. M. Sung, and M. D. Kim, “AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes,” Appl. Phys. Lett. 100(8), 081110 (2012).
[Crossref]

Krames, M. R.

J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett. 78(22), 3379 (2001).
[Crossref]

Kuijk, M.

R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Döhler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans, “Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes,” Appl. Phys. Lett. 79(15), 2315 (2001).
[Crossref]

Kuo, H. C.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mater. Sci. Eng. B-Adv. 122, 184–187 (2005).

Lechner, M. D.

M. D. Lechner, “Influence of Mie scattering on nanoparticles with different particle sizes and shapes: photometry and analytical ultracentrifugation with absorption optics,” J. Serb. Chem. Soc. 70, 361–369 (2005).

Lee, B. J.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mater. Sci. Eng. B-Adv. 122, 184–187 (2005).

Lee, J. R.

J. R. Lee, S. L. Na, J. H. Jeong, S. N. Lee, J. S. Jang, S. H. Lee, J. J. Jung, J. O. Song, T. Y. Seong, and S. J. Park, “Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes,” J. Electrochem. Soc. 152(1), G92 (2005).
[Crossref]

Lee, K. J.

Lee, S. H.

J. R. Lee, S. L. Na, J. H. Jeong, S. N. Lee, J. S. Jang, S. H. Lee, J. J. Jung, J. O. Song, T. Y. Seong, and S. J. Park, “Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes,” J. Electrochem. Soc. 152(1), G92 (2005).
[Crossref]

Lee, S. N.

J. R. Lee, S. L. Na, J. H. Jeong, S. N. Lee, J. S. Jang, S. H. Lee, J. J. Jung, J. O. Song, T. Y. Seong, and S. J. Park, “Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes,” J. Electrochem. Soc. 152(1), G92 (2005).
[Crossref]

Lee, S.-J.

C.-Y. Cho, M. Choe, S.-J. Lee, S.-H. Hong, T. Lee, W. Lim, S.-T. Kim, and S.-J. Park, “Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene,” J. Appl. Phys. 113(11), 113102 (2013).
[Crossref]

Lee, T.

C.-Y. Cho, M. Choe, S.-J. Lee, S.-H. Hong, T. Lee, W. Lim, S.-T. Kim, and S.-J. Park, “Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene,” J. Appl. Phys. 113(11), 113102 (2013).
[Crossref]

Lee, Y. J.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mater. Sci. Eng. B-Adv. 122, 184–187 (2005).

Lee, Y. S.

Lim, W.

C.-Y. Cho, M. Choe, S.-J. Lee, S.-H. Hong, T. Lee, W. Lim, S.-T. Kim, and S.-J. Park, “Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene,” J. Appl. Phys. 113(11), 113102 (2013).
[Crossref]

Lin, C. F.

R. H. Horng, W. K. Wang, S. C. Huang, S. Y. Huang, S. H. Lin, C. F. Lin, and D. S. Wuu, “Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates,” J. Cryst. Growth 298, 219–222 (2007).
[Crossref]

Lin, S. H.

R. H. Horng, W. K. Wang, S. C. Huang, S. Y. Huang, S. H. Lin, C. F. Lin, and D. S. Wuu, “Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates,” J. Cryst. Growth 298, 219–222 (2007).
[Crossref]

Lu, H.

Ludowise, M. J.

J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett. 78(22), 3379 (2001).
[Crossref]

Meinlschmidt, S.

R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Döhler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans, “Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes,” Appl. Phys. Lett. 79(15), 2315 (2001).
[Crossref]

Na, S. L.

J. R. Lee, S. L. Na, J. H. Jeong, S. N. Lee, J. S. Jang, S. H. Lee, J. J. Jung, J. O. Song, T. Y. Seong, and S. J. Park, “Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes,” J. Electrochem. Soc. 152(1), G92 (2005).
[Crossref]

Nakamura, S.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[Crossref]

O’Shea, J. J.

J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett. 78(22), 3379 (2001).
[Crossref]

Oh, T. S.

Park, A. H.

Park, S. J.

J. R. Lee, S. L. Na, J. H. Jeong, S. N. Lee, J. S. Jang, S. H. Lee, J. J. Jung, J. O. Song, T. Y. Seong, and S. J. Park, “Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes,” J. Electrochem. Soc. 152(1), G92 (2005).
[Crossref]

Park, S.-J.

C.-Y. Cho, M. Choe, S.-J. Lee, S.-H. Hong, T. Lee, W. Lim, S.-T. Kim, and S.-J. Park, “Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene,” J. Appl. Phys. 113(11), 113102 (2013).
[Crossref]

Park, Y. J.

Y. J. Park, J. H. Kang, H. K. Kim, Y. S. Katharria, N. Han, M. Han, B. D. Ryu, E.-K. Suh, H. K. Cho, and C.-H. Hong, “Two-step lateral overgrowth of GaN for improved emission from blue light-emitting diodes,” J. Cryst. Growth 372, 157–162 (2013).
[Crossref]

Rooman, C.

R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Döhler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans, “Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes,” Appl. Phys. Lett. 79(15), 2315 (2001).
[Crossref]

Ryu, B. D.

Y. J. Park, J. H. Kang, H. K. Kim, Y. S. Katharria, N. Han, M. Han, B. D. Ryu, E.-K. Suh, H. K. Cho, and C.-H. Hong, “Two-step lateral overgrowth of GaN for improved emission from blue light-emitting diodes,” J. Cryst. Growth 372, 157–162 (2013).
[Crossref]

Seo, T. H.

Seong, T. Y.

J. R. Lee, S. L. Na, J. H. Jeong, S. N. Lee, J. S. Jang, S. H. Lee, J. J. Jung, J. O. Song, T. Y. Seong, and S. J. Park, “Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes,” J. Electrochem. Soc. 152(1), G92 (2005).
[Crossref]

Sharma, R.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[Crossref]

Shen, Y. J.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mater. Sci. Eng. B-Adv. 122, 184–187 (2005).

Song, J. O.

J. R. Lee, S. L. Na, J. H. Jeong, S. N. Lee, J. S. Jang, S. H. Lee, J. J. Jung, J. O. Song, T. Y. Seong, and S. J. Park, “Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes,” J. Electrochem. Soc. 152(1), G92 (2005).
[Crossref]

Steigerwald, D. A.

J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett. 78(22), 3379 (2001).
[Crossref]

Stockman, S. A.

J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett. 78(22), 3379 (2001).
[Crossref]

Suh, E.-K.

Y. J. Park, J. H. Kang, H. K. Kim, Y. S. Katharria, N. Han, M. Han, B. D. Ryu, E.-K. Suh, H. K. Cho, and C.-H. Hong, “Two-step lateral overgrowth of GaN for improved emission from blue light-emitting diodes,” J. Cryst. Growth 372, 157–162 (2013).
[Crossref]

T. S. Oh, H. Jeong, Y. S. Lee, A. H. Park, T. H. Seo, H. Kim, K. J. Lee, M. S. Jeong, and E.-K. Suh, “Light outcoupling effect in GaN light-emitting diodes via convex microstructures monolithically fabricated on sapphire substrate,” Opt. Express 19(10), 9385–9391 (2011).
[Crossref] [PubMed]

Sung, Y. M.

D. J. Chae, D. Y. Kim, T. G. Kim, Y. M. Sung, and M. D. Kim, “AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes,” Appl. Phys. Lett. 100(8), 081110 (2012).
[Crossref]

Wang, S. C.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mater. Sci. Eng. B-Adv. 122, 184–187 (2005).

Wang, W. K.

R. H. Horng, W. K. Wang, S. C. Huang, S. Y. Huang, S. H. Lin, C. F. Lin, and D. S. Wuu, “Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates,” J. Cryst. Growth 298, 219–222 (2007).
[Crossref]

Wierer, J. J.

J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett. 78(22), 3379 (2001).
[Crossref]

Windisch, R.

R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Döhler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans, “Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes,” Appl. Phys. Lett. 79(15), 2315 (2001).
[Crossref]

Wuu, D. S.

R. H. Horng, W. K. Wang, S. C. Huang, S. Y. Huang, S. H. Lin, C. F. Lin, and D. S. Wuu, “Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates,” J. Cryst. Growth 298, 219–222 (2007).
[Crossref]

Yang, Y. L.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mater. Sci. Eng. B-Adv. 122, 184–187 (2005).

Yen, S. N.

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mater. Sci. Eng. B-Adv. 122, 184–187 (2005).

Yu, T.

Yuan, G.

Zhang, G.

Zipperer, D.

R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Döhler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans, “Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes,” Appl. Phys. Lett. 79(15), 2315 (2001).
[Crossref]

Appl. Phys. Lett. (4)

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[Crossref]

R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Döhler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans, “Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes,” Appl. Phys. Lett. 79(15), 2315 (2001).
[Crossref]

J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett. 78(22), 3379 (2001).
[Crossref]

D. J. Chae, D. Y. Kim, T. G. Kim, Y. M. Sung, and M. D. Kim, “AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes,” Appl. Phys. Lett. 100(8), 081110 (2012).
[Crossref]

J. Appl. Phys. (1)

C.-Y. Cho, M. Choe, S.-J. Lee, S.-H. Hong, T. Lee, W. Lim, S.-T. Kim, and S.-J. Park, “Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene,” J. Appl. Phys. 113(11), 113102 (2013).
[Crossref]

J. Cryst. Growth (2)

R. H. Horng, W. K. Wang, S. C. Huang, S. Y. Huang, S. H. Lin, C. F. Lin, and D. S. Wuu, “Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates,” J. Cryst. Growth 298, 219–222 (2007).
[Crossref]

Y. J. Park, J. H. Kang, H. K. Kim, Y. S. Katharria, N. Han, M. Han, B. D. Ryu, E.-K. Suh, H. K. Cho, and C.-H. Hong, “Two-step lateral overgrowth of GaN for improved emission from blue light-emitting diodes,” J. Cryst. Growth 372, 157–162 (2013).
[Crossref]

J. Electrochem. Soc. (1)

J. R. Lee, S. L. Na, J. H. Jeong, S. N. Lee, J. S. Jang, S. H. Lee, J. J. Jung, J. O. Song, T. Y. Seong, and S. J. Park, “Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes,” J. Electrochem. Soc. 152(1), G92 (2005).
[Crossref]

J. Serb. Chem. Soc. (1)

M. D. Lechner, “Influence of Mie scattering on nanoparticles with different particle sizes and shapes: photometry and analytical ultracentrifugation with absorption optics,” J. Serb. Chem. Soc. 70, 361–369 (2005).

Mater. Sci. Eng. B-Adv. (1)

Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, “Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates,” Mater. Sci. Eng. B-Adv. 122, 184–187 (2005).

Opt. Express (1)

Opt. Lett. (1)

Other (2)

D. Britalan and W. Nunley, Optoelectronics: Infrared-Visible-Ultraviolet Devices and Applications, 2nd ed. (CRC Press, 2009)

D. W. Hahn, “Light scattering theory,” University of Florida (2006).

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Figures (5)

Fig. 1
Fig. 1 Schematic diagrams of key steps for fabricating SNs-embedded LED structures: (a) PSS substrate, (b) growth of inverted polygonal pyramid structures (IPPSs) grown on PSS, (c) self-assembled SNs on IPPSs, (d) the epilayer after re-growth.
Fig. 2
Fig. 2 SEM images of the (a) plan-view, (b) bird-view of IPPSs formed on PSS, and cross-sectional view of regrown GaN on (c) 300 nm and (d) 500 nm-SNs.
Fig. 3
Fig. 3 (a) FWHM values according to the size and concentration of the SNs solution and (b) diffuse reflectance according to wavelength for 300 nm and 500 nm SNE-LEDs and for the LED without SNs.
Fig. 4
Fig. 4 Light output power of three different LED chips versus forward injection current measured from (a) the front and (b) the back of the LED chips.
Fig. 5
Fig. 5 Far-field radiation patterns of the LED chip packaging.

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